JP2011119001A - Semiconductor integrated circuit and operation method of the same - Google Patents

Abstract

Even in the case of a selection field search in which a specific field in a defect list of a recording disk is partially searched, the possibility of a long search time is reduced.
A recording / reproducing apparatus records and reproduces information on a recording disk 10 capable of writing defective area data in an alternative area. The integrated circuit LSI includes a memory control circuit 21 and a memory sequence circuit 19. Defect management information including correspondence information between defective areas and replacement areas stored in the management area of the disk 10 and status information of the defective areas is read out and stored in the buffer memory 20 by the circuit 21, and the circuit 19 is stored in the buffer memory 20. Search for defect information. Prior to the search, the circuit 19 is set in state, and an arbitrary search mode of binary search and linear search is selected, and the circuit 19 searches the memory 20 in the selection mode.
[Selection] Figure 3

Description

  The present invention relates to a semiconductor integrated circuit that can be mounted on a disk recording / reproducing apparatus and an operation method thereof, and in particular, even in the case of a selection field search that partially searches a specific field of a defect list of a recording disk, the search time is prolonged. It relates to technology that is effective in reducing the possibility.

  In order to improve the recording reliability of recording data of a high-density recording medium such as an optical disk, there is a defect management technique. In other words, if there are defects (defects) such as scratches, dust, or medium deterioration on the recording surface of the recording medium, the data to be stored at the defect location is saved in another area called a spare area. Data recording reliability can be improved.

  Patent Document 1 below describes a method for managing a defect area in a write-once Blu-ray disc. In the data writing, continuous writing to a predetermined writing sector in the user data area is performed, and the writing operation proceeds until data recording is completed or the last writing sector is written. The write operation includes a plurality of data write stages, and each data write stage includes a plurality of defect verification units (DVUs).

  When a defective area is detected by a verify-after-write operation in the data write stage, the write data temporarily stored in the buffer memory is not a defective cluster, but an outer spare area ( It is written in the alternate cluster in OSA (Outer Spare Area). After that, a defect area data locator that identifies each defect area and indicates the location of the corresponding alternative data is written to a temporary defect list (TDFL). The information of the temporary defect list (TDFL) includes a plurality of defect entries, and each defect entry includes a defective physical sector number, an alternative physical sector number, and two status information.

  Patent Document 2 below describes the meaning of two pieces of status information of defect entries in the temporary defect list (TDFL). When the statuses 1 and 2 are “0000” and “0000”, the information is normal replacement information. When the statuses 1 and 2 are “0001” and “0000”, the replacement processing is not performed. When the statuses 1 and 2 are “0000” and “0001”, the information is the start address information for burst block substitution. When the statuses 1 and 2 are “0000” and “0010”, the burst block substitution information is used. It is supposed to be end address information. The burst block replacement is a process for replacing a plurality of physically continuous clusters at once.

US Patent No. 7,372,788 B2 Specification JP 2006-114107 A

  Prior to the present invention, the present inventors are mounted on an optical disc recording / reproducing apparatus capable of writing and reading a Blu-ray Disc (MLBD) having multiple recording medium layers in one disc. Engaged in research and development of front-end semiconductor integrated circuits.

  Since the number of defect entries in the temporary defect list (TDFL) that must be processed by defect management increases as the recording medium layer of the Blu-ray Disc (BD-RE) increases, the defect search (defect search) is synchronized. Speeding up the defect search has been studied by executing on a cache memory stored in a dynamic random access memory (SDRAM). That is, prior to the defect search, the temporary defect list (TDFL) recorded on the recording surface of the Blu-ray disc is stored in the synchronous dynamic random access memory (SDRAM). By performing the defect search with the SDRAM cache memory, it is possible to increase the speed compared to the defect search with the temporary defect list (TDFL) recorded on the Blu-ray disc itself. When a Blu-ray Disc (BD-RE) is default-formatted, a defect list including 3000 h spare entries for a single layer medium and 6000 h spare entries for a double layer medium is created at the time of formatting. In simple calculation, in the multilayer media of Blu-ray Disc (BD-RE), the number of entries in the defect list to be created first is the number of layers of the single-layer media.

  On the other hand, the defect search in the SDRAM cache memory based on the study by the present inventors only searches a total of four fields of the two status information of the defective physical sector number and the alternative physical sector number included in each defect entry. Turned out not to be. In other words, an optical disk recording / reproducing apparatus may search for and output an alternate physical sector number using a defective physical sector number as a search input, or may search and output a defective physical sector number using an alternative physical sector number as a search input. There are various defect searches depending on the manufacturer's policy.

  Each defect entry in the temporary defect list (TDFL) of the SDRAM cache memory stores status 1 information in the highest field, defective physical sector number in the middle field, and status 2 information in the lower field. The alternative physical sector number is stored in the lowest field.

  In the case of a full field search in which a total of four fields are searched, all defect entries in the temporary defect list (TDFL) are sorted according to a magnitude relationship in the order of small value to large value. In this way, when the search objects are sorted according to the magnitude relationship, a high-speed search can be performed by a search algorithm called binary search. However, in the case of a selection field search in which only a specific field is partially searched, since the data of the specific field itself is not sorted according to the magnitude relation in the order from the small value to the large value, the binary search cannot be used. This has been clarified by studies by the present inventors. That is, in such a case, if a binary search is used after executing a sort process using a specific field as a priority key, the search time may be prolonged.

  The present invention has been made as a result of the examination by the present inventors prior to the present invention as described above.

  Accordingly, an object of the present invention is to reduce the possibility that the search time will be prolonged even in the case of a selection field search in which a specific field of a defect list of a recording disk is partially searched.

  Another object of the present invention is to reduce the chip occupation area of the defect list search circuit in the semiconductor integrated circuit.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  A typical one of the inventions disclosed in the present application will be briefly described as follows.

  That is, a typical embodiment of the present invention is a semiconductor integrated circuit (LSI) that can be mounted on the disk recording / reproducing apparatus (100).

  The disk recording / reproducing apparatus can record and reproduce information on the recording disk (10) in which recording data to be written in the defective area can be written in the alternative area by the substitution process.

  The semiconductor integrated circuit (LSI) includes a memory sequence control circuit (19) and a memory control circuit (21).

  Defect management information including correspondence information between the defective area and the replacement area stored in the management area of the recording disk (10) and status information of the defective area is read out and buffer memory is read out by the memory control circuit (21). By being stored in (20), the memory sequence control circuit (19) searches for the defect management information stored in the buffer memory (20).

  Prior to execution of the search for the defect management information, an arbitrary search mode is selected from either a binary search or a linear search by setting the memory sequence control circuit (19), and the memory is controlled by the arbitrary search mode. The sequence control circuit (19) performs the search for the defect management information stored in the buffer memory (20) (see FIG. 3).

  The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.

  That is, according to the present invention, it is possible to reduce the possibility that the search time will be prolonged even in the case of a selection field search in which a specific field in the defect list of the recording disk is partially searched.

FIG. 1 is a diagram showing a data structure of a Blu-ray disc processed by the semiconductor integrated circuit according to the first embodiment of the present invention mounted on an optical disc recording / reproducing apparatus capable of writing and reading a multilayer Blu-ray disc. FIG. 2 is a diagram showing an example of the configuration of status information 1, defective physical sector number, status information 2, and alternative physical sector number of the defect list entry DFL Entry shown in FIG. FIG. 3 is a diagram showing a configuration of an optical disc recording / reproducing apparatus equipped with the semiconductor integrated circuit according to the first embodiment of the present invention. FIG. 4 shows that the selection range of the SDRAM 20 can be set by register setting in the first control register 19000 of the memory sequence control circuit 19 of the semiconductor integrated circuit LSI according to the first embodiment of the present invention shown in FIG. FIG. FIG. 5 is a diagram for explaining a search operation of the defect list entry DFL Entry stored in the Blu-ray disc defect list area 201 of the SDRAM 20 executed by the semiconductor integrated circuit LSI according to the first embodiment of the present invention shown in FIG. is there. FIG. 6 is a diagram for explaining the state of the binary search in step 503 of the search operation of the SDRAM 20 shown in FIG. 5 executed by the semiconductor integrated circuit LSI according to the first embodiment of the invention shown in FIG. FIG. 7 is a diagram for explaining the state of the linear search in step 506 of the search operation of the SDRAM 20 shown in FIG. 5 executed by the semiconductor integrated circuit LSI according to the first embodiment of the invention shown in FIG.

1. First, an outline of a typical embodiment of the invention disclosed in the present application will be described. The reference numerals of the drawings referred to with parentheses in the outline description of the representative embodiments merely exemplify what are included in the concept of the components to which the reference numerals are attached.

  [1] A typical embodiment of the present invention is a semiconductor integrated circuit (LSI) that can be mounted on a disk recording / reproducing apparatus (100).

  The disk recording / reproducing apparatus can record and reproduce information on the recording disk (10) in which recording data to be written in the defective area can be written in the alternative area by the substitution process.

  The semiconductor integrated circuit (LSI) includes a memory sequence control circuit (19) and a memory control circuit (21).

  Defect management information including correspondence information between the defective area and the replacement area stored in the management area of the recording disk (10) and status information of the defective area is read out and buffer memory is read out by the memory control circuit (21). By being stored in (20), the memory sequence control circuit (19) can search the defect management information stored in the buffer memory (20).

  Prior to execution of the search for the defect management information, the memory sequence control circuit (19) is set in a state so that an arbitrary search mode can be selected from either a binary search or a linear search. Thus, the memory sequence control circuit (19) can perform the search for the defect management information stored in the buffer memory (20) (see FIG. 3).

  According to the embodiment, even in the case of a selection field search in which a specific field in a defect list of a recording disk is partially searched, the possibility that the search time is prolonged can be reduced.

  In a preferred embodiment, when recording the information on the recording disk (10), the memory control circuit (21) causes the correspondence information of the defective area and the replacement area of the recording disk and the defect area to be recorded. The defect management information (DFL Entry) including status information can be stored in the buffer memory (20).

  When the information recording on the recording disk (10) is completed, the defect management information stored in the buffer memory (20) read by the memory control circuit (21) is stored in the management area ( The data can be stored in DMA1, DMA2,... (See FIG. 3).

  In another preferred embodiment, when there is data in the buffer memory (20) that matches the search input data in the arbitrary search mode selected by the state setting of the memory sequence control circuit (19). The memory sequence control circuit (19) can output the matched data as search output data (see FIG. 5).

  In still another preferred embodiment, when the data present in the buffer memory (20) is larger than the search input data in the arbitrary search mode, the memory sequence control circuit (19) A large-side entry value that is closest to the input data can be output (see step 510 and step 515 in FIG. 5).

  When the data present in the buffer memory (20) is smaller than the search input data in the arbitrary search mode, the memory sequence control circuit (19) makes the small-side entry value closest to the search input data. Can be output (see step 511 and step 515 in FIG. 5).

  In still another preferred embodiment, the memory sequence control circuit (19) includes control registers (19001, 19005).

  The state setting of the memory sequence control circuit can be executed by register setting in the control register (see FIG. 3).

  In a more preferred embodiment, the setting of the register in the control register (19001) is performed by the field of the defect area, the field of the replacement area, and the status information of the defect management information in the search of the defect management information. This is made possible by bit information indicating which field to use (see step 502 in FIG. 5).

  In another more preferred embodiment, the register setting in the control register (19005) for forcing the arbitrary search mode to the linear search is stored in the buffer memory and stored in the defect management information. Instructing the memory sequence control circuit to check whether a plurality of entries including the field of the defective area, the field of the replacement area, and the field of the status information are sorted according to the order of the entry value It is made possible by the information to be made.

  In still another more preferred embodiment, the memory sequence control circuit (19) includes a nonvolatile memory (1900), and the nonvolatile memory stores a program for the alternative processing. To do.

  In a specific embodiment, the semiconductor chip of the dynamic random access memory and the semiconductor chip of the semiconductor integrated circuit (LSI) constituting the buffer memory (20) are included in one sealed package of a system-in-package. It is characterized by being sealed.

  In another specific embodiment, the dynamic random access memory constituting the buffer memory (20) is integrated on a semiconductor chip of the semiconductor integrated circuit (LSI).

  [2] A typical embodiment of another aspect of the present invention is a method of operating a semiconductor integrated circuit (LSI) that can be mounted on the disk recording / reproducing apparatus (100).

  The disk recording / reproducing apparatus can record and reproduce information on the recording disk (10) in which recording data to be written in the defective area can be written in the alternative area by the substitution process.

  The semiconductor integrated circuit (LSI) includes a memory sequence control circuit (19) and a memory control circuit (21).

The operation method is as follows:
Reading defect management information including correspondence information between the defect area and the replacement area stored in the management area of the recording disk (10) and status information of the defect area;
Storing the defect management information in a buffer memory (20) using the memory control circuit (21);
Selecting an arbitrary search mode from either binary search or linear search according to the state setting of the memory sequence control circuit (19);
Performing the search for the defect management information stored in the buffer memory (20) using the memory sequence control circuit (19) according to the arbitrary search mode;
(See FIG. 3).

  According to the embodiment, even in the case of a selection field search in which a specific field in a defect list of a recording disk is partially searched, the possibility that the search time is prolonged can be reduced.

  In a preferred embodiment, when recording the information on the recording disk (10), the memory control circuit (21) causes the correspondence information of the defective area and the replacement area of the recording disk and the defect area to be recorded. The defect management information (DFL Entry) including status information can be stored in the buffer memory (20).

  When the information recording on the recording disk (10) is completed, the defect management information stored in the buffer memory (20) read by the memory control circuit (21) is stored in the management area ( The data can be stored in DMA1, DMA2,... (See FIG. 3).

2. Details of Embodiment Next, the embodiment will be described in more detail. In all the drawings for explaining the best mode for carrying out the invention, components having the same functions as those in the above-mentioned drawings are denoted by the same reference numerals, and repeated description thereof is omitted.

[Embodiment 1]
《Disk data structure》
FIG. 1 is a diagram showing a data structure of a Blu-ray disc processed by the semiconductor integrated circuit according to the first embodiment of the present invention mounted on an optical disc recording / reproducing apparatus capable of writing and reading a multilayer Blu-ray disc.

  As shown in FIG. 1, by initialization of the format of the disk 10, a lead-in zone 10A, a data zone 10B, and a lead-out zone 10C are arranged in order from the inner circumference side to the outer circumference side. The central data zone 10B includes a central user data zone 10B2, an internal spare area (ISA) 10B1 and an external spare area (OSA) 10B3 for a replacement area of the defective area. Contains. That is, user data to be recorded on the disk 10 can be recorded in the central user data zone 10B2, and the central user data zone 10B2 is stored in the internal spare area (ISA) 10B1 and the external spare area (OSA) 10B3 on both sides. It is possible to arrange an alternative area for substituting the defective area by defect replacement processing.

  Further, the lead-in zone 10A which is the management / control information area on the inner circumference side is an undefined area RS, disk management areas (Disk Management Area) DMA1, DMA2, test write area OPC, temporary disk management area (Temporary Disk Management Area) TDMA. The lead-out zone 10C, which is the management / control information area on the outer periphery side, includes an undefined area RS and disk management areas DMA3 and DMA4. The test write area OPC is used for test writing or the like when setting the data recording / reproducing conditions of the disk 10.

  The defect replacement information by the internal spare area (ISA) 10B1 and the external spare area (OSA) 10B3 of the defective area in the central user data zone 10B2 is additionally recorded and updated in the temporary disk management area TDMA. In the disk management areas DMA1, DMA2, DMA3, DMA4..., The last (latest) replacement management information finally recorded in the temporary disk management area TDMA is recorded.

  The disk management areas DMA1... Recorded in the lead-in zone 10A and the lead-out zone 10C include information on a disk definition structure DSS and a plurality of defect lists DFL # 1 to DFL # 7. The information of the disk definition structure DSS includes a DSS identifier, a physical sector address indicating a logical sector address at the head position of the user data zone 10B2, a physical sector address indicating a logical sector address at the end position of the user data zone 10B2, and the like. It is out. A plurality of defect lists DFL # 1... Each defect list of DFL # 7 includes a plurality of temporary defect lists TDFL, each temporary defect list TDFL includes a defect list entry DFL Entry, and each defect list entry DFL Entry. Includes four entries of status information 1, defective physical sector number, status information 2 and alternative physical sector number.

  Similarly to the description in Patent Document 2, when the status information 1 and the status information 2 are “0000” and “0000”, they are normal alternative information, and the status information 1 and the status information 2 are “0001” and “0000”. ”Is information that has not been replaced, and status information 1 and status information 2 are“ 0000 ”and“ 0001 ”, it is information on the start address for burst block replacement, status information 1 and status information When the information 2 is “0000” or “0010”, it is information on the end address of the burst block alternative. This burst block replacement is an effective process for collectively replacing a plurality of physically continuous clusters that cannot be written to or read from due to scratches on the disk 10 or the like.

《Defect list entry structure》
FIG. 2 is a diagram showing an example of the configuration of status information 1, defective physical sector number, status information 2, and alternative physical sector number of the defect list entry DFL Entry shown in FIG.

  As shown in FIG. 2, status information 1 (Status 1), defective physical sector number (Defective PSN), status information 2 (Status 2), and replacement physical sector number (Replacement PSN) are arranged in order from left to right. Yes.

  The entry number (Entry No.) in FIG. 2 is a number added to the defect list entry DFL Entry for convenience, and is arranged in the order from the smallest value to the largest value in the order from the top to the bottom. Further, as indicated by the arrow L1, in the status information 1 (Status 1), the numerical values of the entries arranged in the direction from the top to the bottom are sorted according to the magnitude relationship in the order from the smallest value to the largest value.

  However, in the defective physical sector number (Defective PSN), as indicated by the arrow L2, only the plurality of entries having the same status information 1 (Status 1) value are ordered from the smallest value to the largest value from the top to the bottom. And sorted according to the magnitude relationship. In the status information 2 (Status 2), as indicated by an arrow L3, from the top only in an entry having the same value of the status information 1 (Status 1) and the same value of the defective physical sector number (Defective PSN). It is sorted according to the magnitude relationship in the order from the smallest value to the largest value in the downward direction. Further, in the replacement physical sector number (Replacement PSN), as indicated by an arrow L4, the value of status information 1 (Status 1) is the same, the value of defective physical sector number (Defective PSN) is the same, and status information 2 Only entries with the same (Status 2) value are sorted from top to bottom in order from small value to large value according to the magnitude relationship.

  Therefore, in the case of all field search in which a total of four fields of status information 1 (Status 1), defective physical sector number (Defective PSN), status information 2 (Status 2), and alternative physical sector number (Replacement PSN) are searched. All the defect entries in the temporary defect list (TDFL) are sorted according to the magnitude relationship in the order of small value to large value. In this way, when the search objects are sorted according to the magnitude relationship, a high-speed search is possible by a search algorithm called binary search. However, depending on the policy of the manufacturer of the optical disc recording / reproducing apparatus, there is a case where an alternative physical sector number is searched for and output using the defective physical sector number as a search input. In some cases, various defect searches exist. As described above, in the case of a selection field search in which only a specific field is partially searched, the data of the specific field itself is not sorted according to the magnitude relation in the order from the small value to the large value. I can't.

  Therefore, in the case of a selection field search that partially searches only a specific field, a binary search cannot be used, and in this case, a linear search (Sequential Search) is used. It will be. As a result, the semiconductor integrated circuit according to the first embodiment of the present invention mounted on the optical disk recording / reproducing apparatus can search the defect list of the recording disk by both the binary search and the linear search.

<< Configuration of optical disc recording / reproducing apparatus >>
FIG. 3 is a diagram showing a configuration of an optical disc recording / reproducing apparatus equipped with the semiconductor integrated circuit according to the first embodiment of the present invention.

  As shown in FIG. 3, the optical disc recording / reproducing apparatus 100 includes a Blu-ray disc 10, an optical pickup 12, a laser drive circuit 11, a current / voltage conversion circuit 13, a semiconductor integrated circuit LSI, a central processing unit (CPU) 17, and an SDRAM 20. By being included, the host computer 200 can be connected. The semiconductor integrated circuit LSI includes a reproduction circuit 14, a demodulation circuit 15, an ATAPI unit 16, a modulation circuit 18, a memory sequence control circuit 19, and a memory control circuit 21.

  Laser light emitted from the optical pickup 12 is applied to the recording surface of the Blu-ray disc 10 to record information, and reflected light is detected by the optical pickup 12 during reproduction of information to generate a light detection current. A spindle motor (not shown) rotates the Blu-ray disc 10 during information recording and information reproduction. The Blu-ray disc 10 is a removable disc that can be attached to and detached from the optical disc recording / reproducing apparatus 100.

  Information reproduction and recording commands and control data from the host computer 200 are supplied to the ATAPI unit 16 of the semiconductor integrated circuit LSI via a central processing unit (CPU) 17. At the time of reproducing information, the light detection current generated from the optical pickup 12 is converted into a voltage signal by the current / voltage conversion circuit 13 and then supplied to the reproduction circuit 14. A phase-locked loop (PLL) (not shown) included in the reproduction circuit 14 reproduces a clock and data from an input signal, and the reproduction data is decoded by a waveform equivalent circuit of the demodulation circuit 15, a Viterbi decoder, and an error correction circuit. The The decoded signal generated from the demodulation circuit 15 is supplied to the host computer 200 via the ATAPI unit 16. At the time of recording information, the recording data from the host computer 200 is modulated by the modulation circuit 18, and then information recording on the recording surface of the Blu-ray disc 10 is executed by the laser driving circuit 11 and the optical pickup 12. Note that ATAPI is an abbreviation for Advanced Technology Attachment Packet Interface, which is a standard interface between a personal computer and a hard disk.

<Memory sequence control circuit>
The memory sequence control circuit 19 is built in the semiconductor integrated circuit LSI in order to execute a search for a defect list of the recording disk stored in the SDRAM 20 by both the binary search and the linear search.

  The memory sequence control circuit 19 includes a rewritable nonvolatile memory 190 for storing programs, a program selection circuit 191, a search input data input circuit 192, and a search output data output circuit 193. The nonvolatile memory 190 is configured by an on-chip flash memory incorporated in the semiconductor integrated circuit LSI or other electrically writable and erasable nonvolatile memory. The non-volatile memory 190 includes a first program area 1900 and a second program area 1901. The first program area 1900 can store a defect management program of the Blu-ray disc 10, while the second program area 1901 contains Is compatible with the case where a DVD (Digital Versatile Disk) disc is loaded on the optical disc recording / reproducing apparatus 100, a defect management program for the DVD disc can be stored.

  Although not shown in FIG. 3, the memory sequence control circuit 19 includes a processor unit (PU) that executes a program stored in the nonvolatile memory 190, and this processor unit (PU) is a first program. The defect management program for the Blu-ray disc stored in the area 1900 and the defect management program for the DVD disc can be executed. These defect management programs can be downloaded by the host computer 200 via the central processing unit (CPU) 17 and can be rewritten.

  As described with reference to FIG. 1, the defective area of the central user data zone 10B2 is transferred to the internal spare area (ISA) 10B1 and the external spare area (OSA) 10B3 on both sides of the Blu-ray disk 10 by the defect replacement process. An alternative area to be replaced is arranged. When recording the recording data on the Blu-ray disc 10, after searching for a defect in the recording range, the defect position is avoided and the recording data is recorded in a spare area at an alternative position corresponding to the defect position. A defect list including a defect position and information indicating a corresponding alternative position is stored in the Blu-ray disc defect list area 201 of the SDRAM 20 when the information is recorded by the memory control circuit 21. When the information recording is completed, the defect replacement information in the Blu-ray disc defect list area 201 of the SDRAM 20 is transferred to the disk management areas DMA1, DMA2, DMA3, DMA4,... Of the disk 10 via the memory control circuit 21 and the central processing unit (CPU) 17. To be recorded.

  When reproducing the information on the disk 10, the defect replacement information first recorded in the disk management areas DMA 1, DMA 2... Is read by the memory control circuit 21 and stored in the Blu-ray disk defect list area 201 of the SDRAM 20. Therefore, the memory sequence control circuit 19 can search for defect replacement information at high speed by using the cache memory of the SDRAM 20 when reproducing information from the disk 10.

  Similarly, when recording data on a DVD disk, a defect list including information indicating a defect position and a corresponding alternative position is stored in the DVD disk defect list area 202 of the SDRAM 20 by the memory control circuit 21 when information is recorded. Stored. When the information recording is completed, the defect replacement information in the DVD disk defect list area 202 of the SDRAM 20 is recorded on the DVD disk via the memory control circuit 21 and the central processing unit (CPU) 17.

  When reproducing the information on the DVD disc, the defect replacement information first recorded on the DVD disc is read by the memory control circuit 21 and stored in the DVD disc defect list area 202 of the SDRAM 20. As a result, like the Blu-ray disc 10, the memory sequence control circuit 19 can search for defect replacement information at high speed using the cache memory of the SDRAM 20 when reproducing information from the DVD disc. By using the program selection circuit 191, the defect management program of the Blu-ray disc 10 stored in the first program area 1900 of the nonvolatile memory 190 and the defect management program of the DVD disk stored in the second program area 1901 are stored. It is possible to select which one to use.

<Control register>
When the defect management program for the Blu-ray disc 10 stored in the first program area 1900 of the nonvolatile memory 190 is used, a plurality of control registers 19000-1 are sent from the host computer 200 via the central processing unit (CPU) 17. It is necessary to execute register setting in 19005.

  The first control register 19000 is used to set the selection range of the SDRAM 20, the second control register 19001 is used to select a field to be used in the defect list search, and the third control register 19002 is used to select a match value / approximate value. The fourth control register 19003 is used to output a single hit result from all the search data of the selected field, the fifth control register 19004 is used for 64-bit batch comparison, and the like. Is used for order sort check.

  FIG. 4 shows that the selection range of the SDRAM 20 can be set by register setting in the first control register 19000 of the memory sequence control circuit 19 of the semiconductor integrated circuit LSI according to the first embodiment of the present invention shown in FIG. FIG.

  As shown in FIG. 4, the SDRAM 20 includes status information 1 (Status 1), defective physical sector number (Defective PSN), status information 2 (Status 2), and replacement physical sector number (Replacement PSN) of the defect list entry DFL Entry. Information is arranged. Status information 1 (Status 1) is 4 bits [3: 0], a defective physical sector number (Defective PSN) is 28 bits [27: 0], and status information 2 (Status 2) is 4 bits [3: 0] and the replacement physical sector number (Replacement PSN) is 28 bits [27: 0], so one row of the total four fields is 8 bytes (= 64 bits).

  The search base address Base Address, the offset address Offset Address, and the search size Size can be designated by register settings of the first control register 19000 of the memory sequence control circuit 19, respectively. The register setting of the first control register 19000 can be used for a plurality of searches by searching the defect list of the recording disk by both the binary search and the linear search.

  The second control register 19001 has four fields of status information 1 (Status 1), defective physical sector number (Defective PSN), status information 2 (Status 2), and alternative physical sector number (Replacement PSN) of the defect list entry DFL Entry. Are used to specify which field to use in the defect list search. Therefore, the bit information that can be set in the second control register 19001 is 4 bits. For example, when the 4-bit information is “1111”, it is specified that all four fields are used. When the 4-bit information is “0100”, only the defective physical sector number (Defective PSN) is used. Specifies that Further, as will be described later with reference to FIG. 5, any one of the linear search mode and the binary search mode can be selected by setting information of 4-bit information in the second control register 19001.

  The third control register 19002 determines whether the search input data supplied to the search input data input circuit 192 in the selection field set by the second control register 19001 and the data existing in the SDRAM 20 match or approximate values. Used to specify output.

  The fourth control register 19003 is effective for linear search for maximum value search, minimum value search, etc., and designates that one hit result is output from all search data of the selected field set by the second control register 19001. Used to do.

  In the case of binary search, the fifth control register 19004 is fixed to bit “0” except for the selected field set by the second control register 19001, and one row of the four fields is 64 bits (= 8 bytes) at a time. Used to specify searching. Further, the fifth control register 19004, in the case of linear search, if the 4-bit information set in the second control register 19001 is “1001”, the search output in the field of status information 1 (Status 1). Used to specify that an AND result with the search output in the field of the replacement physical sector number (Replacement PSN) is output.

  As described above, all field search for searching a total of four fields of status information 1 (Status 1), defective physical sector number (Defective PSN), status information 2 (Status 2), and replacement physical sector number (Replacement PSN) In this case, all defect entries in the temporary defect list (TDFL) are sorted according to the magnitude relationship in order from the smallest value to the largest value. The specification of a disc recording / reproducing apparatus that writes and reads Blu-ray discs also requires this rule. Accordingly, the sixth control register 19005 checks whether or not the defect list entry DFL Entry stored in the Blu-ray disc defect list area 201 of the SDRAM 20 is actually sorted according to the magnitude relationship in the order of small value to large value. Used for. Note that when the sixth control register 19005 is turned on and it is checked whether it is actually sorted according to the magnitude relationship in order from the smallest value to the largest value, the linear search is forcibly set. Accordingly, in this case, the setting information of the 4-bit information in the second control register 19001 is irrelevant to the selection between the linear search and the binary search.

  When data matching the various search conditions described above exists in the SDRAM 20, the matched data is supplied as search output data to the host computer 200 via the search output data output circuit 193 and the central processing unit (CPU) 17. The

《Defect list entry search operation》
FIG. 5 is a diagram for explaining a search operation of the defect list entry DFL Entry stored in the Blu-ray disc defect list area 201 of the SDRAM 20 executed by the semiconductor integrated circuit LSI according to the first embodiment of the present invention shown in FIG. is there.

  As shown in FIG. 5, when the search operation is started in step 501, in the next step 502, the content of the 4-bit information set in the second control register 19001 of the memory sequence control circuit 19 follows the order of magnitude relationship. It is determined whether the selected field is selected. That is, if the 4-bit information is any one of “1111”, “1110”, “1100”, and “1000”, it is determined that the field is selected according to the order of the magnitude relationship, and a binary search is performed in step 503. Is executed. If the 4-bit information is other setting data, it is determined that the field selection is not in accordance with the order of magnitude relationship, and a linear search is executed in step 504.

  In the binary search in step 503, when the SDRAM 20 has a value that matches the search input data supplied to the search input data input circuit 192 under the field selection conditions of the 4-bit information set in the second control register 19001, The matched data is supplied as search output data to the host computer 200 through steps 505 and 507 via the search output data output circuit 193 and the central processing unit (CPU) 17.

  Even in the linear search in step 504, when there is a value in the SDRAM 20 that matches the search input data supplied to the search input data input circuit 192 under the field selection conditions of the 4-bit information set in the second control register 19001. The matched data is supplied as search output data to the host computer 200 through steps 506 and 512 via the search output data output circuit 193 and the central processing unit (CPU) 17.

  In the binary search in step 503, if the SDRAM 20 does not have a value that matches the search input data supplied to the search input data input circuit 192 under the field selection condition of the 4-bit information in the second control register 19001 (mis-hit Operation) moves to step 509. In step 509, it is determined whether or not the value of the entry field-selected according to the 4-bit information in the second control register 19001 is larger than the search input data supplied to the search input data input circuit 192. If it is determined in step 509 that the entry value is larger than the search input data, the large approximate value entry value is output as search output data in step 510. Note that the large-side approximate value entry value is a value that most closely approximates the matching data. At this time, the small approximate entry value, which is data obtained by decrementing the final entry number value by -1, is also output at the same time.

  On the other hand, if it is determined in step 509 that the entry value is smaller than the search input data, the small approximate entry value is output as search output data in step 511. Note that the small side approximate value entry value is also a value closest to the coincidence data. At this time, the large approximate entry value, which is data obtained by incrementing the final entry number value by +1, is also output at the same time.

  In the case of the linear search in step 504, the difference between each entry value and the search input data is calculated in step 506. If the difference is 0 (zero), it is determined that the data matches (hit). Is supplied as search output data to the host computer 200 in step 512 via the search output data output circuit 193 and the central processing unit (CPU) 17. If it is determined in step 506 that there is a mismatch (mis-hit), all the data is searched in step 513, the difference between each entry value and the search input data is calculated, and data that is larger and smaller than the search input data ( Step 515 outputs the large side approximate value) and data (small side approximate value) smaller than the search input data and having a small difference.

  Thus, the binary search and linear search outputs are both entry values that match the search input data (step 507, step 512), or entry values that approximate the search input data (small side and large side) (step 510, Step 511 and step 515) are output. If they match (hit), a match entry value is output to the search output data output circuit 193. If they do not match (mis-hit), the search output data output circuit 193 outputs both the small side and large side approximate values or the small side and large side approximate values. It is also possible to do. The output selection of the approximate values of the small side and the large side can be selected by the third register control register 19002. Although not shown, if they match (hit), the match flag of the search output data output circuit 193 becomes high level “1”. Therefore, it can be determined from the signal level of the match flag whether the output signal of the search output data output circuit 193 is a match entry or an approximate entry.

  In the binary search, the approximate value is arranged at a location before or after the closest match data. On the other hand, in the linear search in which the search target is searched for data that is not sorted according to the magnitude relationship, if there is matching data, the search ends there (fourth control register 19003: set HIT once). However, if there is no matching data, all set entries are searched and an approximate value is output. It is faster to perform a direct linear search in this way than to perform a search by a binary search using a field that is not sorted according to the magnitude relationship as a priority key.

  For example, the approximate value is searched when the status information 1 and the status information 2 are “0000” and “0010” on the Blu-ray disc (BD-RE), that is, when the end address information is an alternative to the burst block. . In this burst block replacement, multiple consecutive clusters are written, the first physical sector number (First PSN) of the first cluster and the first physical sector number (First PSN) of the last cluster are written . For this reason, it may be difficult to search for the first physical sector number (First PSN) between clusters by matching search, so an approximate value is required.

  In addition, in a Blu-ray disc having two or more recording medium layers, the use direction differs for each layer. For example, in a dual-layer disc, the outer space area (OSA) of the first recording medium layer (L0 layer) on the side far from the pick is used from the outer periphery toward the inner periphery, whereas it is closer to the pick. In the internal space area (ISA) of the second recording medium layer (L1 layer) on the layer side, it is used from the inner periphery toward the outer periphery. In such a case, an approximate value may be used as a replacement destination in order to search for an effective cluster, and either one of the approximate values of the large side and the small side is required. As described above, in order to cope with various policies of the manufacturer of the optical disc recording / reproducing apparatus, not only a binary search but also a linear search may be necessary.

《Binary Search》
FIG. 6 is a diagram for explaining the state of the binary search in step 503 of the search operation of the SDRAM 20 shown in FIG. 5 executed by the semiconductor integrated circuit LSI according to the first embodiment of the invention shown in FIG.

  As shown in FIG. 6, in the binary search in step 503 of the search operation of the SDRAM 20 shown in FIG. 5, the status information 1 (sorted according to the magnitude relationship in the order of small value to large value in the temporary defect list (TDFL) of the SDRAM 20). A total of four fields are searched: Status 1), defective physical sector number (Defective PSN), status information 2 (Status 2), and alternative physical sector number (Replacement PSN).

  In the binary search executed in this case, first, the entry value of the first first intermediate position MD1 that is substantially intermediate between the search start position and the search end position is compared with the value of the search input data. If it is determined that the value of the search input data is larger than the entry value of the first intermediate position MD1, the entry value of the second intermediate position MD2 that is substantially intermediate between the first intermediate position MD1 and the search end position and the search input data The value is compared. If it is determined that the value of the search input data is larger than the entry value of the second intermediate position MD2, the entry value of the third intermediate position MD3 and the search input data that are substantially intermediate between the second intermediate position MD2 and the search end position. The value is compared. If it is determined that the value of the search input data is smaller than the entry value of the third intermediate position MD3, the entry value and the search input of the fourth intermediate position MD4, which is substantially intermediate between the second intermediate position MD2 and the third intermediate position MD3. Data values are compared. For example, if it is determined that the entry value at the fourth intermediate position MD4 matches the value of the search input data, the entry value at the fourth intermediate position MD4 can be output as search match data.

  In this way, when a total of all four fields sorted according to the magnitude relationship in the order from the smallest value to the largest value in the temporary defect list (TDFL) of the SDRAM 20 are searched, the binary search shown in FIG. Can be searched.

《Linear Search》
FIG. 7 is a diagram for explaining the state of the linear search in step 506 of the search operation of the SDRAM 20 shown in FIG. 5 executed by the semiconductor integrated circuit LSI according to the first embodiment of the invention shown in FIG.

  As shown in FIG. 7, in the linear search of step 504 of the search operation of the SDRAM 20 shown in FIG. Only a specific selection field of all four fields in total including information 2 (Status 2) and a replacement physical sector number (Replacement PSN) is searched. For example, in the case where the specific selection field is a defective physical sector number (Defective PSN), the entry values of the specific selection field are not sorted according to the magnitude relationship in the order of small value to large value.

  In the linear search executed in this case, the entry value at the search start position is first compared with the value of the search input data as the first comparison target entry. If it is determined that the first comparison target entry value does not match the search input data value, the comparison target entry position is shifted by one step toward the search end position. The second comparison target entry is instructed, the second comparison target entry value is compared with the value of the search input data, and if the two values are determined to be inconsistent, the comparison target entry position is shifted by one step. Is done. In this way, if the entry value to be compared does not match the value of the search input data, the entry position to be compared next is shifted by one step. As a result, it is determined that the entry value at the specific comparison target entry position matches the value of the search input data, and the specific comparison target entry value can be output as search match data.

  As mentioned above, the invention made by the present inventor has been specifically described based on various embodiments. However, the present invention is not limited thereto, and various modifications can be made without departing from the scope of the invention. Needless to say.

  For example, in the optical disk recording / reproducing apparatus shown in FIG. 3, a system in-package (SIP) system in which a semiconductor chip of a semiconductor integrated circuit LSI and a semiconductor chip of an SDRAM 20 are built in one plastic sealed package. It is also possible to adopt a form. Further, when the semiconductor chip of the semiconductor integrated circuit LSI is formed by a semiconductor manufacturing process in which logic and DRAM can be mixedly mounted, a system-on-chip (SoC: System) in which the SDRAM 20 is integrated on the semiconductor chip of the semiconductor integrated circuit LSI. On-Chip) is also possible.

  In the optical disk recording / reproducing apparatus according to Embodiment 1 of the present invention shown in FIG. 3, the defect management program for the Blu-ray disk 10 in the first program area 1900 and the defect management for the DVD disk in the second program area 1901 of the nonvolatile memory 190 are performed. The program algorithm may be implemented by hardware such as an electronic circuit integrated on a semiconductor chip of a semiconductor integrated circuit LSI.

  The present invention is not limited to optical disks such as DVD and BD, which are removable discs that can be attached to and detached from the recording / reproducing apparatus. It can be applied to a device.

DESCRIPTION OF SYMBOLS 100 ... Optical disk recording / reproducing apparatus 200 ... Host computer LSI ... Semiconductor integrated circuit 10 ... Blu-ray disk 11 ... Laser drive circuit 12 ... Optical pick-up 13 ... Current / voltage conversion circuit 14 ... Reproduction circuit 15 ... Demodulation circuit 16 ... ATAPI unit 17 ... Center Processing unit (CPU)
18 ... Modulation circuit 19 ... Memory sequence control circuit 20 ... SDRAM
DESCRIPTION OF SYMBOLS 21 ... Memory control circuit 190 ... Non-volatile memory 191 ... Program selection circuit 192 ... Search input data input circuit 193 ... Search output data output circuit 1900 ... 1st program area 1901 ... 2nd program area 19000 ... 1st control register 19001 ... 1st 2 control register 19002 ... 3rd control register 19003 ... 4th control register 19004 ... 5th control register 19005 ... 6th control register 10 ... disk 10A ... lead-in zone 10B ... data zone 10C ... lead-out zone 10B1 ... internal spare area ( (ISA)
10B2 ... User data zone 10B3 ... External spare area (OSA)
RS: Undefined area DMA1, 2: Disk management area OPC: Test write area TDMA: Temporary disk management area DSS: Disk definition structure DFL # 1 to DFL # 7: Defect list TDFL: Temporary defect list DFL Entry: Defect list entry
Status 1 ... Status information
Defective PSN ... Defective physical sector number
Status 2 ... Status information 2
Replacement PSN: Replacement physical sector number

Claims (20)

A semiconductor integrated circuit that can be mounted on a disk recording / reproducing apparatus,
The disk recording / reproducing apparatus is capable of recording and reproducing information on a recording disk that is made writable in a substitute area by recording data to be written in a defective area,
The semiconductor integrated circuit comprises a memory sequence control circuit and a memory control circuit,
Defect management information including correspondence information of the defect area and the replacement area stored in the management area of the recording disk and status information of the defect area is read out and stored in the buffer memory by the memory control circuit. The memory sequence control circuit can execute a search for the defect management information stored in the buffer memory;
Prior to execution of the search for the defect management information, an arbitrary search mode can be selected from either a binary search or a linear search by setting the state of the memory sequence control circuit, and the memory can be selected by the arbitrary search mode. A semiconductor integrated circuit, wherein a sequence control circuit can execute the search of the defect management information stored in the buffer memory. When recording the information on the recording disk, the memory control circuit stores the defect management information including the correspondence information of the defective area, the replacement area, and the status information of the defective area of the recording disk. Can be stored in memory,
The defect management information stored in the buffer memory read by the memory control circuit when the information recording on the recording disk is completed can be stored in the management area of the recording disk. 2. The semiconductor integrated circuit according to 1.   When there is data in the buffer memory that matches the search input data in the arbitrary search mode selected by the state setting of the memory sequence control circuit, the memory sequence control circuit searches the match data for the search output data. The semiconductor integrated circuit according to claim 2, wherein output is possible as When the data present in the buffer memory is larger than the search input data in the arbitrary search mode, the memory sequence control circuit can output a large-side entry value that approximates the search input data,
When the data present in the buffer memory is smaller than the search input data in the arbitrary search mode, the memory sequence control circuit can output a small-side entry value that approximates the search input data. The semiconductor integrated circuit according to claim 3. The memory sequence control circuit includes a control register;
5. The semiconductor integrated circuit according to claim 4, wherein the state setting of the memory sequence control circuit can be executed by register setting in the control register.   The register setting in the control register indicates which field of the defect management information field, the replacement area field, or the status information field of the defect management information is used in the search of the defect management information. 6. The semiconductor integrated circuit according to claim 5, which is made possible by the bit information shown.   The register setting to the control register for forcing the arbitrary search mode to the linear search is stored in the buffer memory and the field of the defect area of the defect management information and the field of the alternative area And a plurality of entries including the field of the status information are made possible by information instructing the memory sequence control circuit to check whether the entries are sorted according to the order of the order of the entry values. Item 7. The semiconductor integrated circuit according to Item 6.   8. The semiconductor integrated circuit according to claim 7, wherein the memory sequence control circuit includes a nonvolatile memory, and the nonvolatile memory stores a program for the alternative processing.   9. The semiconductor chip of the dynamic random access memory and the semiconductor chip of the semiconductor integrated circuit constituting the buffer memory are sealed in one sealed package of a system-in package. Semiconductor integrated circuit.   9. The semiconductor integrated circuit according to claim 8, wherein the dynamic random access memory constituting the buffer memory is integrated on a semiconductor chip of the semiconductor integrated circuit. A method of operating a semiconductor integrated circuit that can be mounted on a disk recording / reproducing apparatus,
The disk recording / reproducing apparatus is capable of recording and reproducing information on a recording disk that is made writable in a substitute area by recording data to be written in a defective area,
The semiconductor integrated circuit comprises a memory sequence control circuit and a memory control circuit,
The operation method is as follows:
Reading defect management information including correspondence information of the defect area and the replacement area stored in the management area of the recording disk and status information of the defect area;
Storing the defect management information in the buffer memory using the memory control circuit;
Selecting an arbitrary search mode from either binary search or linear search according to the state setting of the memory sequence control circuit;
Performing a search for the defect management information stored in the buffer memory using the memory sequence control circuit according to the arbitrary search mode;
A method for operating a semiconductor integrated circuit, comprising: When recording the information on the recording disk, the memory control circuit stores the defect management information including the correspondence information of the defective area, the replacement area, and the status information of the defective area of the recording disk. Can be stored in memory,
The defect management information stored in the buffer memory read by the memory control circuit when the information recording on the recording disk is completed can be stored in the management area of the recording disk. 11. A method for operating a semiconductor integrated circuit according to item 11.   When there is data in the buffer memory that matches the search input data in the arbitrary search mode selected by the state setting of the memory sequence control circuit, the memory sequence control circuit searches the match data for the search output data. 13. The method of operating a semiconductor integrated circuit according to claim 12, wherein output is possible as When the data present in the buffer memory is larger than the search input data in the arbitrary search mode, the memory sequence control circuit can output a large-side entry value that approximates the search input data,
When the data present in the buffer memory is smaller than the search input data in the arbitrary search mode, the memory sequence control circuit can output a small-side entry value that approximates the search input data. The method of operating a semiconductor integrated circuit according to claim 13. The memory sequence control circuit includes a control register;
15. The method of operating a semiconductor integrated circuit according to claim 14, wherein the state setting of the memory sequence control circuit can be executed by register setting in the control register.   The register setting in the control register indicates which field of the defect management information field, the replacement area field, or the status information field of the defect management information is used in the search of the defect management information. 16. The method of operating a semiconductor integrated circuit according to claim 15, which is made possible by the bit information indicated.   The register setting to the control register for forcing the arbitrary search mode to the linear search is stored in the buffer memory and the field of the defect area of the defect management information and the field of the alternative area And a plurality of entries including the field of the status information are made possible by information instructing the memory sequence control circuit to check whether the entries are sorted according to the order of the order of the entry values. Item 17. A method for operating a semiconductor integrated circuit according to Item 16.   18. The method of operating a semiconductor integrated circuit according to claim 17, wherein the memory sequence control circuit includes a nonvolatile memory, and the nonvolatile memory stores a program for the alternative processing.   19. The semiconductor chip of the dynamic random access memory and the semiconductor chip of the semiconductor integrated circuit constituting the buffer memory are sealed in one sealed package of a system-in package. Operating method of semiconductor integrated circuit.   19. The method of operating a semiconductor integrated circuit according to claim 18, wherein the dynamic random access memory constituting the buffer memory is integrated on a semiconductor chip of the semiconductor integrated circuit.

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