JP2011108858A - Method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device where a through hole formed at a substrate can obtain excellent electrical conduction. <P>SOLUTION: The method of manufacturing the semiconductor device 100 includes a step of forming a through hole penetrating a core substrate 11, a step of forming a metal layer 14a (first metal layer) on a rear surface of the core substrate 11 so as to cover one opening of the through hole, a step of disposing a solder nugget 25 in the through hole, a step of forming a metal layer 14b (second metal layer) on the front surface of the core substrate 11 so as to cover the other opening of the through hole, and a thermocompression bonding step of melting the solder nugget 25 so as to electrically connects the solder nugget 25 to the metal layer 14a and to the metal layer 14b by welding the solder nugget 25. The method also includes, before the thermocompression bonding step, a step of disposing a liquid flux-activating resin 16 in an area where the solder nugget 25 is electrically connected to the metal layer 14a and to the metal layer 14b, respectively, in the thermocompression bonding step. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor device.

  In recent years, for the purpose of high integration of semiconductor devices, development related to miniaturization of wiring structures, electrode pad structures, and the like in semiconductor devices has been performed. For this reason, printed circuit boards are also made smaller and higher in density. Usually, wiring is formed on the front and back of a printed circuit board, and wirings on both sides are electrically connected through a through hole penetrating the board. Patent Documents 1 and 2 describe the following as a method of forming a through electrode that electrically connects the wirings on both sides.

  Patent Document 1 discloses the formation of a through-hole conductor comprising an organic solvent and a conductive powder whose surface is substantially covered with silver by exposing a part of a sulfonic acid-based curing agent, binder, copper powder or copper alloy powder. A technique for applying or filling the conductive paste for coating into all the through-holes of the base material etched out of the electric circuit is described.

  In Patent Document 2, when a metal material contained in a conductive paste is ionized, a reducing agent capable of reducing the metal ion to metal is coated on the inner wall of the through hole, and the through hole is filled and cured to connect the through hole. Techniques for forming are described.

JP 2001-93330 A JP 11-289158 A

  However, in the technique described in the above patent document, the conductive material filled in the through hole is oxidized, and the conductivity of the through electrode is likely to be lowered. In addition, due to the miniaturization of the through hole, the conductive material is not sufficiently filled, and a gap may be generated in the through hole. For this reason, there arises a problem that good electrical connection cannot be obtained.

  The present invention has been made in view of the above circumstances, and particularly relates to a through electrode provided on a printed circuit board, and provides a method for manufacturing a semiconductor device capable of obtaining good electrical conduction of a through hole of the board.

According to the present invention,
Forming a through hole penetrating the substrate;
Providing a first metal layer on the back surface of the substrate so as to cover the opening of the through hole;
A step of disposing a solder lump inside the through hole;
Providing a second metal layer on the surface of the substrate so as to cover the opening of the through hole;
A thermocompression bonding step for electrically connecting the solder mass and the first metal layer and the solder mass and the second metal layer by melting the solder mass;
Including
Before the thermocompression bonding step,
A method of manufacturing a semiconductor device, comprising the step of disposing a liquid flux-active resin in a region where the solder lump and the first metal layer and the second metal layer are electrically connected to each other in the thermocompression bonding step. A method is provided.

  The present invention includes a step of disposing a liquid flux-active resin in regions where the solder lump, the first metal layer, and the second metal layer are electrically connected in the thermocompression bonding step. The flux-active resin has an action of reducing the oxide film formed on the solder lump, lowering the surface tension of the solder, and improving the wettability of the solder. Therefore, in the present invention, since the solder lump can be heat-pressed to the first metal layer and the second metal layer via the liquid flux active resin, the first metal layer and the second metal are caused by the action of the flux active resin. The reflow connection between the layer and the solder lump can be improved. Therefore, good electrical conduction of the through hole of the substrate can be obtained.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the semiconductor device which can obtain the favorable electrical conduction of the through-hole of a board | substrate can be provided.

It is process sectional drawing which shows an example of the manufacturing process of the semiconductor device which concerns on 1st Embodiment of this invention. It is process sectional drawing which shows an example of the manufacturing process of the semiconductor device which concerns on 1st Embodiment of this invention. It is process sectional drawing which shows an example of the manufacturing process of the semiconductor device which concerns on 2nd Embodiment of this invention. It is sectional drawing which shows the modification of the semiconductor device by this invention. It is sectional drawing which shows the modification of the semiconductor device by this invention. It is sectional drawing which shows the modification of the semiconductor device by this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

(First embodiment)
1 and 2 are process cross-sectional views illustrating an example of the manufacturing process of the semiconductor device according to the first embodiment of the present invention.

  The semiconductor device 100 has a structure in which a wiring board 15a, a core substrate 11, and a wiring board 15b are stacked in this order (see FIG. 2C). More specifically, the metal layer 14a (first conductor circuit layer), the prepreg 13a (first insulating layer), the core substrate 11, the prepreg 13b (second insulating layer), and the metal layer 14b (second conductor circuit layer) are provided. They are stacked in this order. A solder lump 25 and a liquid flux active resin 16 are embedded in the through hole 31 that penetrates the core substrate 11.

  The wiring boards 15a and 15b have a configuration in which metal layers 14a and 14b are respectively formed on one surface of the prepregs 13a and 13b. The prepregs 13a and 13b are not formed in the regions on the wiring boards 15a and 15b and facing through holes 31 described later, and the metal layers 14a and 14b are exposed. Thereby, the metal layers 14a and 14b and the solder lump 25 inside the through hole 31 can be electrically connected. In other words, the wiring boards 15 a and 15 b can be electrically connected via the solder lump 25 disposed in the through hole 31 of the core substrate 11.

  In the present embodiment, the prepregs 13a and 13b are used as an adhesive layer that bonds the core substrate 11 and the metal layers 14a and 14b. The prepregs 13a and 13b are formed using an insulating material obtained by curing a resin such as a polyimide resin, an epoxy resin, or a liquid crystal polymer. Thereby, the core board | substrate 11 and metal layer 14a, b can be insulated.

  As the metal layers 14a and 14b, iron, nickel, aluminum, stainless steel, copper, or the like is used, and among these, copper is more preferably used.

  In the present embodiment, the shape of the solder lump 25 is spherical. Thereby, it can embed in the through-hole 31 without distinction of upper and lower, right and left. The size of the solder lump 25 can be appropriately adjusted by the depth of the through hole 31 or the thickness of the core substrate 11, the diameter of the opening of the through hole 31, and the like.

  The solder lump 25 has a core 21 and a solder layer 22 that covers the core 21. The core 21 is preferably hard to be thermally deformed and only needs to have a higher melting point than the solder layer 22. For example, the core 21 may be formed using a resin composition having a melting point higher than that of the solder layer 22. Thereby, since it is not melt-deformed during solder reflow, a good connection can be realized. The core 21 may include a conductive material. Examples of the conductive material include copper. By including copper in the core 21, the electrical conductivity can be improved and the electrical resistance can be lowered.

  The solder layer 22 functions as a connection terminal. Examples of the method for forming the solder layer 22 include a method using electrolytic plating. The thickness, composition, etc. of the solder layer 22 can be appropriately selected and used.

  Here, “covering” is not limited to covering the entire outer surface of the core 21, and may have an uncovered region. The degree and degree of coating can be adjusted as appropriate.

  The liquid flux active resin 16 is liquid at room temperature. Further, the viscosity of the liquid flux-active resin 16 at normal temperature is preferably 0.1 to 1,000 Pa · s, and particularly preferably 0.5 to 500 Pa · s. By setting the viscosity of the liquid flux active resin 16 at room temperature to the above range, it is possible to reliably fill the through-holes with the liquid flux active resin 16 and to reliably remove the oxide film on the solder lump surface. can do.

  The liquid flux active resin 16 in this embodiment contains a flux active compound. The flux active compound is a compound having an action of reducing the oxide film of the solder lump 25, reducing the surface tension of the solder, and improving the wettability of the solder. The liquid flux active resin 16 preferably further contains a thermosetting resin as a main ingredient.

  As the thermosetting resin, for example, a known thermosetting resin such as an epoxy resin, a cyanate resin, a urethane resin, a polybutadiene resin, a silicone resin, or a phenol resin can be applied, and an epoxy resin is more preferable. In order to fill the gaps in the through holes, those having few impurities, particularly ionic impurities, are preferable.

  When using an epoxy resin, the type of the epoxy resin is not particularly limited. For example, a bisphenol F type epoxy resin, a bisphenol A type epoxy resin, a naphthalene type epoxy resin, a biphenyl type epoxy resin, a polyfunctional type epoxy resin, or the like may be used. However, liquids at room temperature are preferred. Those which are not liquid at normal temperature can be used by dissolving in an existing liquid epoxy resin in advance, or by dissolving in a solvent in advance.

  As the curing agent for the epoxy resin, known ones can be used. For example, an acid anhydride curing agent, an amine curing agent, a phenol resin curing agent, or the like can be used. As the curing accelerator for the epoxy resin, known ones can be used. For example, imidazoles, DBU, phosphorus catalysts, metal complexes such as metal acetylacetonate and metal naphthenic acid, and the like can be used. In addition, a filler can be added to improve the characteristics. Examples thereof include silica, calcium carbonate, alumina, aluminum nitride and the like.

  Examples of the flux active compound include substances having a reducing action such as organic carboxylic acids (including polymers and monomers), hydroquinone and naphthoquinone, and compounds having the structure. These are preferably 10 to 50 parts by weight with respect to 100 parts by weight of the liquid thermosetting resin as the main agent. If the amount is less than 10 parts by weight, a sufficient flux activity may not be obtained, and there is a possibility that the bondability of the solder lump 25 is lowered, and if it exceeds 50 parts by weight, migration or moisture resistance deterioration may occur. is there.

  Further, the flux active compound may be, for example, a substance having both an action as a curing agent for epoxy resin and a flux action. More specifically, it is a compound having at least two phenolic hydroxyl groups per molecule and at least one aromatic carboxylic acid per molecule. Examples of such compounds include dihydroxybenzoic acid, for example. Phenol phthalin, dihydroxynaphthoic acid, methyl nadic anhydride, and the like.

  Further, the liquid flux active resin 16 may further include a curing agent different from the flux active compound. The curing agent is not particularly limited, and examples thereof include phenols, amines, and thiols. In particular, phenols are preferably used in consideration of reactivity with an epoxy resin and physical properties after curing.

  In addition to these raw materials, a low stress agent, a pigment, a flame retardant, a viscosity modifier, an adhesion aid and the like can be added as necessary.

  The method for producing the resin composition used for the liquid flux-active resin 16 is, for example, measuring a predetermined blending amount of these raw materials, mixing them using a three roll or a kneader, and defoaming. it can.

  Next, a method for manufacturing a semiconductor device according to the present embodiment will be described with reference to FIGS.

The manufacturing method of the semiconductor device 100 in this embodiment is as follows.
Forming a through hole 31 penetrating the core substrate 11;
Providing a metal layer 14a (first metal layer) on the back surface of the core substrate 11 so as to cover the opening of the through hole 31;
A step of disposing the solder lump 25 inside the through hole 31;
Filling the inside of the through-hole 31 with the liquid flux active resin 16 and disposing the liquid flux active resin 16 in regions where the solder lump 25 and the metal layer 14a and the metal layer 14b are electrically connected;
Providing a metal layer 14b (second metal layer) on the surface of the core substrate 11 so as to cover the opening of the through hole 31;
A thermocompression bonding step of electrically connecting the solder lump 25 and the metal layer 14a and the solder lump 25 and the metal layer 14b by melting the solder lump 25;
including.
Details will be described below.

  First, as shown in FIG. 1A, a core substrate 11 is prepared.

  Next, as illustrated in FIG. 1B, a through hole 31 that penetrates the core substrate 11 is formed by a method such as etching, drilling, or laser processing.

  Subsequently, a wiring board 15 a is provided on the back surface of the core substrate 11 so as to cover the opening of the through hole 31. More specifically, as shown in FIG. 1C, the prepreg 13a is placed on the upper side and the metal layer 14a (first metal layer) is placed on the lower side. At this time, the prepreg 13a is not formed in the region where the wiring board 15a and the through hole 31 face each other, and the metal layer 14a is exposed. Thereby, the metal layer 14a and the solder layer 22 can be connected in a solder reflow process described later.

  Next, as shown in FIG. 2A, a solder lump 25 is disposed inside the through hole 31 and filled with a liquid flux-active resin 16. The amount of the liquid flux active resin 16 is preferably such an amount that the liquid flux active resin 16 does not overflow when the solder mass 25 is filled in the through holes 31 together with the liquid flux active resin 16. However, the liquid flux-active resin 16 must be interposed between the solder lump 25 and the metal layer 14a. As a result, the liquid flux active resin 16 is disposed in a region where the solder lump 25 and the metal layer 14a are electrically connected. The order of filling the liquid flux active resin 16 and the solder lump 25 is not particularly limited.

  Next, the wiring board 15 b is provided on the surface of the core substrate 11 so as to cover the opening of the through hole 31. More specifically, as shown in FIG. 2B, the metal layer 14b (second metal layer) is placed on the core substrate 11 with the prepreg 13b on the bottom. At this time, the prepreg 13b is not formed in the region where the wiring board 15b and the through hole 31 face each other, and the metal layer 14b is exposed. Thereby, the metal layer 14b and the solder layer 22 can be connected in a solder reflow process described later. Before the wiring board 15b is installed, the liquid flux active resin 16 is further filled in the through-hole 31 so that the liquid flux active resin 16 is always interposed between the solder lump 25 and the metal layer 14b. Also good. As a result, the liquid flux active resin 16 is disposed in a region where the solder lump 25 and the metal layer 14b are electrically connected.

  Subsequently, the solder layer 22 of the solder lump 25, the metal layer 14a of the wiring board 15a, and the metal layer 14b of the wiring board 15b are electrically connected by heating and pressurizing in a reflow furnace. The liquid flux-active resin 16 spreads so as to fill the gap around the solder lump 25 and the through hole 31 (see FIG. 2C). Furthermore, the prepregs 13a and 13b may be melted and spread so as to fill the gaps inside the through holes 31. Further, since the core 21 has a melting temperature higher than that of the solder layer 22 and is not melted even during solder reflow, thermal deformation of the solder lump 25 can be reduced.

The effect of this embodiment will be described.
In the present invention, the liquid flux active resin 16 and the solder lump 25 are filled in the through holes 31 penetrating the core substrate 11 before the thermocompression bonding step. The liquid flux active resin 16 has an action of reducing the solder oxide film, lowering the surface tension of the solder, and improving the wettability of the solder. Therefore, since the solder lump 25 can be heat-pressed to the metal layer 14a and the metal layer 14b via the liquid flux active resin 16, the metal layer 14a and the metal layer 14b are soldered to the metal layer 14a by the action of the liquid flux active resin 16. The reflow connection with the lump 25 can be improved. Therefore, good electrical conduction of the through hole of the substrate can be obtained.

  Moreover, by using the liquid flux-active resin 16 in the present invention, the liquid flux-active resin 16 can be easily filled in the through holes 31 without gaps. Therefore, electrical conduction of the through hole 31 of the core substrate 11 can be obtained by a simple method.

  Further, conventionally, there has been a problem that the conductive circuit layer serving as a plating seed becomes thick and the variation increases because the conductive material is embedded in the through hole by electrolytic plating. However, the present invention requires an electrolytic plating process. Therefore, a thin and constant copper foil (conductor circuit layer) can be used. Therefore, it is possible to form the metal layers 14a and 14b that are thin and have small thickness variations, and fine circuit patterning with high accuracy can be obtained. In addition, since lid plating formed so as to close the end face of the insulating material filled in the hole is not required, the effect of reducing the thickness and reducing the thickness variation becomes more remarkable.

  Since the solder lump 25 in this embodiment has the core 21 having a melting point higher than that of the solder, it is possible to suppress thermal deformation of the solder lump 25 and fix the connection position. Thereby, a highly reliable semiconductor device can be obtained.

  Moreover, in this embodiment, the core board | substrate 11 can be made into a metal core board | substrate by insulating the core board | substrate 11 and the metal layers 14a and b using an insulating material as the prepregs 13a and b.

  In addition, although the said 1st Embodiment demonstrated the example which fills the liquid flux active resin 16 inside the through-hole 31 before a thermocompression-bonding process, before thermocompression-bonding process, for example, metal layer 14a, b of A liquid flux active resin 16 may be provided on at least one surface. For example, the liquid flux active resin 16 is applied to the surface of the metal layers 14a and 14b and the regions where the solder lump 25 and the metal layers 14a and 14b are electrically connected. Thereby, since the solder lump 25 is heat-pressed to the metal layers 14a and 14b via the liquid flux active resin 16, a good electrical connection can be obtained.

  In addition, the area | region where the liquid flux active resin 16 is arrange | positioned should just be an area | region where the solder lump 25 and metal layer 14a, b are each electrically connected, The arrangement | positioning method is not specifically limited, It can select suitably. Moreover, you may combine these methods suitably. Moreover, the process of arrange | positioning the liquid flux active resin 16 should just be before a thermocompression bonding process, and multiple may be sufficient as it.

(Second Embodiment)
FIG. 3 is a process cross-sectional view showing an example of the manufacturing process of the semiconductor device according to the second embodiment of the present invention.

  In the first embodiment, the example in which the metal layers 14a and 14b are formed above and below the core substrate 11 via the prepregs 13a and b has been described. However, in the second embodiment, the core substrate 12 has adhesiveness. In this example, the prepregs 13a and 13b are not provided. Since other configurations are the same as those of the first embodiment, description thereof is omitted.

  In the present embodiment, the core substrate 12 is formed using a thermoplastic resin or a thermosetting resin. When a thermoplastic resin is used as the core substrate 12, the molten resin enters the unevenness of the substrate, and an adhesion force is obtained. Moreover, when a thermosetting resin is used as the core substrate 12, a chemical bonding force with a metal is added together with the above reason to obtain an adhesion force. Thereby, the core substrate 12 and the metal layers 14a and 14b can be bonded without providing an adhesive layer.

  More specifically, examples of the thermoplastic resin include liquid crystal polymer (LCP), polyimide (PI), and polyetheretherketone (PEEK). Moreover, as a thermosetting resin, an epoxy and a polyimide (PI) are mentioned, for example.

  Since the semiconductor device 300 can be manufactured by the same manufacturing method as the semiconductor device 100, a brief description will be given below with reference to FIG.

  The through hole 31 is formed in the core substrate 12 in the same manner as described with reference to FIGS.

  Subsequently, as shown in FIG. 3A, a metal layer 14 a is provided on the back surface of the core substrate 12 so as to cover the opening of the through hole 31.

  Subsequently, the liquid flux active resin 16 and the solder lump 25 are filled into the through holes 31 in the same manner as described with reference to FIG. Subsequently, a metal layer 14b is provided on the surface of the core substrate 12 so as to cover the opening of the through hole 31 (FIG. 3B).

  Next, as shown in FIG. 3C, the solder lump 25 and the metal layer 14a and the solder lump 25 and the metal layer 14b are electrically connected by heating and pressurizing in a reflow furnace.

  In this embodiment, since the adhesive core substrate 12 is used, the step of forming the prepregs 13a and 13b can be omitted. Other effects are the same as in the above embodiment.

  As mentioned above, although embodiment of this invention was described with reference to drawings, these are the illustrations of this invention, Various structures other than the above are also employable.

  When the core substrates 11 and 12 are conductive, the solder lump 25 and the core substrates 11 and 12 must be insulated. For example, in the present embodiment, an example in which the solder lump 25 has the core 21 and the solder layer 22 that covers the core 21 has been described, but a resin layer may be further formed around the solder layer 22. Good. Thereby, the insulation between the solder lump 25 and the core substrates 11 and 12 is maintained.

  In this case, the resin layer around the solder layer 22 must contain a flux active compound. As a result, the resin layer melts and spreads during solder reflow, and the solder layer 22 is exposed and becomes conductive, and the gap between the through hole 31 and the solder lump 25 can be filled with the melted resin layer. The exposed solder layer 22 can be reflow-connected to the metal layers 14a and 14b in the same manner as described in the above embodiment. Thereby, generation | occurrence | production of a void is further suppressed and a connection can be made favorable.

  Moreover, as such a resin layer, for example, a thermosetting resin is preferable, and a liquid layer at room temperature is preferable. More specifically, a known thermosetting resin such as an epoxy resin, a cyanate resin, a urethane resin, a polybutadiene resin, a silicone resin, or a phenol resin can be applied, and an epoxy resin is more preferable. In order to fill the gaps in the through holes 31, those having few impurities, particularly ionic impurities, are preferable.

  In addition, as a method of forming such a resin layer, for example, the core 21 with the solder layer 22 is placed on a base material, and a varnish in which a resin is dissolved in a solvent is sprayed with a spray gun or the like while rolling the core 21. Thus, a method of forming a resin layer on the outer surface of the solder layer 22 can be mentioned. As another method, for example, a varnish obtained by dissolving a resin in a solvent is applied on a base material to form a thin film, and the core 21 with the solder layer 22 is placed on the thin film and rolled. Thus, there is a method of attaching to the outer surface of the solder layer 22.

  When the core substrates 11 and 12 are conductive, a metal core substrate is conventionally provided with a through hole having a diameter larger than that of the through hole (through electrode), the through hole is filled with an insulating resin, and the insulating resin is further provided with a through hole. The through electrode of the metal core substrate was formed by providing the conductive metal and filling the conductive metal. On the other hand, in the present invention, since the through holes can be conducted by a simple method of burying the solder lump 25 in the through holes 31 formed in the core substrates 11 and 12, the interval between the through holes 31 can be reduced. This makes it possible to refine the circuit pattern.

  For example, in the above embodiment, the case where there is one solder lump 25 embedded in the through-hole 31 has been described, but a plurality of solder lumps 25 may be provided. The stacking method is not particularly limited. For example, as illustrated in FIG. 4, the stacking may be performed by placing the solder lump 25 between adjacent solder lumps 25. As illustrated in FIG. The lump 25 may be stacked.

  For example, in the above embodiment, the case where the through hole 31 is cylindrical has been described. However, as shown in FIG. 6, the through hole may have a tapered shape whose width decreases downward. . In this case, the solder lump 25 is more stably embedded in the through hole.

  In the above embodiment, the case where the core substrate is a single layer has been described. However, a multilayer wiring structure in which a plurality of semiconductor substrates are stacked may be used.

11 core substrate 12 core substrate 13a prepreg 13b prepreg 14a metal layer 14b metal layer 15a wiring board 15b wiring board 16 flux active resin 21 core 22 solder layer 25 solder lump 31 through hole 100 semiconductor device 300 semiconductor device

Claims (9)

Forming a through hole penetrating the substrate;
Providing a first metal layer on the back surface of the substrate so as to cover the opening of the through hole;
A step of disposing a solder lump inside the through hole;
Providing a second metal layer on the surface of the substrate so as to cover the opening of the through hole;
A thermocompression bonding step for electrically connecting the solder mass and the first metal layer and the solder mass and the second metal layer by melting the solder mass;
Including
Before the thermocompression bonding step,
A method of manufacturing a semiconductor device, comprising the step of disposing a liquid flux-active resin in a region where the solder lump and the first metal layer and the second metal layer are electrically connected to each other in the thermocompression bonding step. Method. In the manufacturing method of the semiconductor device according to claim 1,
The method of manufacturing a semiconductor device, wherein the liquid flux-active resin is filled in the through hole. In the manufacturing method of the semiconductor device according to claim 1 or 2,
The method of manufacturing a semiconductor device, wherein the liquid flux-active resin is provided on a surface of the first metal layer and / or the second metal layer. In the manufacturing method of the semiconductor device according to claim 1,
The solder lump has a solder layer made of solder, and a resin layer covering the outside of the solder layer,
In the thermocompression bonding step, the solder layer is exposed by melting the resin layer, and the solder layer and the first metal layer are electrically connected to the solder layer and the second metal layer, respectively. A method of manufacturing a semiconductor device. In the manufacturing method of the semiconductor device according to claim 1,
The method of manufacturing a semiconductor device, wherein the solder layer has a core having a melting point higher than that of solder. In the manufacturing method of the semiconductor device according to claim 5,
The method of manufacturing a semiconductor device, wherein the core of the solder block contains copper. In the manufacturing method of the semiconductor device according to claim 1,
The method of manufacturing a semiconductor device, wherein the solder block has a spherical shape or a column shape. In the manufacturing method of the semiconductor device in any one of Claims 1 thru | or 7,
The method of manufacturing a semiconductor device, wherein the through hole has a tapered shape whose width decreases downward. In the manufacturing method of the semiconductor device in any one of Claims 1 thru | or 7,
A method of manufacturing a semiconductor device, wherein a plurality of the solder lumps are stacked inside the through hole.

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