JP2011082559A - 半導体用接着フィルム - Google Patents
半導体用接着フィルム Download PDFInfo
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- JP2011082559A JP2011082559A JP2010288610A JP2010288610A JP2011082559A JP 2011082559 A JP2011082559 A JP 2011082559A JP 2010288610 A JP2010288610 A JP 2010288610A JP 2010288610 A JP2010288610 A JP 2010288610A JP 2011082559 A JP2011082559 A JP 2011082559A
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- Prior art keywords
- adhesive film
- resin
- film
- adhesive
- resins
- Prior art date
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- 239000002313 adhesive film Substances 0.000 title claims abstract description 113
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
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- 229920006287 phenoxy resin Polymers 0.000 claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 abstract description 24
- 238000010030 laminating Methods 0.000 abstract description 5
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- 239000011347 resin Substances 0.000 description 60
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 23
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- 239000000463 material Substances 0.000 description 22
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- -1 glycidyl ester Chemical class 0.000 description 18
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- 238000000034 method Methods 0.000 description 14
- 229920003192 poly(bis maleimide) Polymers 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 12
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- 239000010410 layer Substances 0.000 description 9
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- 239000000243 solution Substances 0.000 description 8
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- 239000003054 catalyst Substances 0.000 description 4
- 125000001142 dicarboxylic acid group Chemical group 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 4
- 239000011256 inorganic filler Substances 0.000 description 4
- 229910003475 inorganic filler Inorganic materials 0.000 description 4
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- 229920005575 poly(amic acid) Polymers 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 229920005992 thermoplastic resin Polymers 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 3
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- 229910005965 SO 2 Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
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- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- JMMZCWZIJXAGKW-UHFFFAOYSA-N 2-methylpent-2-ene Chemical compound CCC=C(C)C JMMZCWZIJXAGKW-UHFFFAOYSA-N 0.000 description 2
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
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- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 2
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- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
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- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 description 2
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- NJPAJFFEXRMGDR-UHFFFAOYSA-N 1,2,3,4,8,9,10,10a-octahydropyrimido[1,2-a]azepine;benzo[a]anthracen-7-yloxyboronic acid Chemical compound C1CCC=CN2CCCNC21.C1=CC2=CC=CC=C2C2=C1C(OB(O)O)=C(C=CC=C1)C1=C2 NJPAJFFEXRMGDR-UHFFFAOYSA-N 0.000 description 1
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- RPBWMJBZQXCSFW-UHFFFAOYSA-N 2-methylpropanoyl 2-methylpropaneperoxoate Chemical compound CC(C)C(=O)OOC(=O)C(C)C RPBWMJBZQXCSFW-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
- Dicing (AREA)
Abstract
本発明は、例えば、ウエハ裏面にラミネートし、ウエハ及び接着フィルムをダイシングした後に、接着フィルム付き半導体素子としてピックアップすることにより半導体装置の製造に利用することができる半導体用接着フィルムを提供することを目的とする。
【解決手段】
接着フィルムがダイシングテープ上に積層されてなる半導体用接着フィルムであって、接着フィルムが、重量平均分子量が5000〜150000であるフェノキシ樹脂を含有してなる接着フィルムである半導体用接着フィルム。
【選択図】なし
Description
(式中、R1は二価の有機基を示し、複数個のR1は繰り返し単位ごとに各々異なっていてもよい)で表される繰り返し単位を有するものである上記接着フィルムに関する。
(式中、R1は二価の有機基を示し、複数個のR1は繰り返し単位ごとに各々異なっていてもよい)で表される繰り返し単位を有するフェノキシ樹脂が好ましい。
(式中、XはO、CH2、CF2、SO2、S、CO、C(CH3)2又はC(CF3)2を示し、四つのR2は各々独立に、水素、低級アルキル基、低級アルコキシ基、フッ素、塩素又は臭素を示し、二つのDは各々独立にエチレン性不飽和二重結合を有するジカルボン酸残基を示す)
(式中、YはO、CH2、CF2、SO2、S、CO、C(CH3)2又はC(CF3)2を示し、四つのR3は各々独立に水素、低級アルキル基、低級アルコキシ基、フッ素、塩素又は臭素を示し、二つのDは各々独立にエチレン性不飽和二重結合を有するジカルボン酸残基を示す)
《ワニスの調合》
表1及び表2の配合表に示す通り、実施例1〜4及び比較例1〜2のワニスを調合した。また、比較例3は銀ペースト(日立化成工業(株)製、商品名エピナール)である。なお、表1及び表2において、種々の記号は下記の意味である。
PKHC:ユニオンカーバイド(株)製、ビスフェノールA型フェノキシ樹脂(Mw:45000)
ZX1356−2:ユニオンカーバイド(株)製、ビスフェノールAF共重合型フェノキシ樹脂(Mw:62000)
YPS−007:東都化成(株)製、ビスフェノールAS共重合型フェノキシ樹脂(Mw:35000)
YD−8125:東都化成(株)製、ビスフェノールA型エポキシ樹脂(エポキシ当量175)
H−1:明和化成(株)製、フェノールノボラック(OH当量106)
NH−7000:日本化薬(株)製、ナフトールノボラック(OH当量140)
VH−4170:大日本インキ(株)製、ビスフェノールA型ノボラック(OH当量118)
L−10:旭チバ(株)製、ビスフェノールF型シアネート樹脂
S510:チッソ(株)製、3−グリシドキシプロピルトリメトキシシラン
S520:チッソ(株)製、3−グリシドキシプロピルメチルジメトキシシラン
A−189:日本ユニカー(株)製、3−メルカプトプロピルトリメトキシシラン
MEK:メチルエチルケトン
NMP:N−メチルピロリドン
DMAc:ジメチルアセトアミド
これらのワニスを20〜40μmの厚さに基材(ポリプロピレンフィルム)上に塗布し、80℃で10分、続いて150℃で30分加熱し、その後、室温で基材から剥がして、接着フィルムを得た。得られた接着フィルム(実施例1〜4並びに比較例1及び2)はいずれも室温でベタツキはなく、自己支持性を持つフィルムであった。
実施例1〜4並びに比較例1及び2の接着フィルム、並びに比較例3の銀ペーストの接着特性(せん断接着力及びピール強度)についての評価試験結果を表3、4に示す。
〔評価サンプルの作成〕
接着フィルムを4×4mmの大きさに切断し、これを4×4mmの大きさのシリコンチップと銅リードフレームの間に挟み、500gの荷重をかけて、200℃で3秒間圧着させたのち、180℃で1時間熱硬化し、せん断接着力測定用サンプルを作成した。接着フィルムを8×8mmの大きさに切断し、これを8×8mmの大きさのシリコンチップと銅リードフレームの間に挟み、500gの荷重をかけて、200℃で3秒間圧着させたのち、180℃で1時間熱硬化し、ピール強度測定用サンプルを作成した。
4×4mmのシリコンチップを4×4mmの接着フィルムで銅リードフレームに接着したサンプルを用いて、室温及び350℃、20秒加熱時のせん断接着力をプッシュプルゲージにより測定した。
〔ピール強度〕
8×8mmのシリコンチップを8×8mmの接着フィルムで銅リードフレームに接着したサンプルを用いて、250℃、20秒加熱時のピール強度(シリコンチップ引き剥がし強度)をプッシュプルゲージにより測定した。
Claims (1)
- 接着フィルムがダイシングテープ上に積層されてなる半導体用接着フィルムであって、
前記接着フィルムが、重量平均分子量が5000〜150000であるフェノキシ樹脂を含有してなる接着フィルムである半導体用接着フィルム。
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JP2013165245A (ja) * | 2012-02-13 | 2013-08-22 | Shin Etsu Chem Co Ltd | 半導体ウエハ用保護フィルム及び半導体チップの製造方法 |
JP2018035260A (ja) * | 2016-08-31 | 2018-03-08 | 日本化薬株式会社 | マレイミド樹脂成型体、マレイミド樹脂成型体の製造方法、マレイミド樹脂組成物及びその硬化物 |
WO2018043380A1 (ja) * | 2016-08-31 | 2018-03-08 | 日本化薬株式会社 | マレイミド樹脂成型体、マレイミド樹脂成型体の製造方法、マレイミド樹脂組成物及びその硬化物 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013165245A (ja) * | 2012-02-13 | 2013-08-22 | Shin Etsu Chem Co Ltd | 半導体ウエハ用保護フィルム及び半導体チップの製造方法 |
JP2018035260A (ja) * | 2016-08-31 | 2018-03-08 | 日本化薬株式会社 | マレイミド樹脂成型体、マレイミド樹脂成型体の製造方法、マレイミド樹脂組成物及びその硬化物 |
WO2018043380A1 (ja) * | 2016-08-31 | 2018-03-08 | 日本化薬株式会社 | マレイミド樹脂成型体、マレイミド樹脂成型体の製造方法、マレイミド樹脂組成物及びその硬化物 |
JPWO2018043380A1 (ja) * | 2016-08-31 | 2019-06-24 | 日本化薬株式会社 | マレイミド樹脂成型体、マレイミド樹脂成型体の製造方法、マレイミド樹脂組成物及びその硬化物 |
JP7011589B2 (ja) | 2016-08-31 | 2022-01-26 | 日本化薬株式会社 | マレイミド樹脂成型体、マレイミド樹脂成型体の製造方法、マレイミド樹脂組成物及びその硬化物 |
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