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JP2011003565A - Electronic unit - Google Patents

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Publication number
JP2011003565A
JP2011003565A JP2009142862A JP2009142862A JP2011003565A JP 2011003565 A JP2011003565 A JP 2011003565A JP 2009142862 A JP2009142862 A JP 2009142862A JP 2009142862 A JP2009142862 A JP 2009142862A JP 2011003565 A JP2011003565 A JP 2011003565A
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Japan
Prior art keywords
lead frame
plating layer
electronic unit
plating
board
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Withdrawn
Application number
JP2009142862A
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Japanese (ja)
Inventor
Yuji Kaneno
雄志 金野
Hiroaki Kawanobe
宏明 川野辺
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Hitachi Astemo Ltd
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Hitachi Automotive Systems Ltd
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Application filed by Hitachi Automotive Systems Ltd filed Critical Hitachi Automotive Systems Ltd
Priority to JP2009142862A priority Critical patent/JP2011003565A/en
Publication of JP2011003565A publication Critical patent/JP2011003565A/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To achieve an electronic unit having higher productivity.SOLUTION: The electronic unit has: a substrate 110 mounted with electronic components; a lead frame 100 for fixing the substrate; each spot nickel plating part 400 provided in the lead frame; each wire 120 electrically connecting between the substrate and the lead frame; and a resin 130 for sealing the substrate and a part of the lead frame. The spot nickel plating part 400 comprises: a first plating layer 410 having a prescribed crystal grain size; and a second plating layer 415 provided so as to cover the first plating layer 410 and having a crystal grain size smaller than that of the first plating layer 410.

Description

本発明は、電子ユニットに関する。   The present invention relates to an electronic unit.

自動車の快適性を向上させるために、その室内空間を広く確保しようという要求は絶えない。解決手段のひとつとして、室内に設置してある電子機器を室外すなわちエンジンルームに設置する方法がある。室内に設置してある電子機器を室外に設置するためには、電子機器に耐水・耐油性を持たせる必要がある。そのために、電子機器中の電子部品を樹脂モールドで封止する技術が開発されている。   In order to improve the comfort of automobiles, there is an ever-increasing demand for securing a large interior space. As one solution, there is a method in which an electronic device installed indoors is installed outdoors, that is, in an engine room. In order to install an electronic device installed indoors outdoors, it is necessary to provide the electronic device with water resistance and oil resistance. Therefore, a technique for sealing an electronic component in an electronic device with a resin mold has been developed.

電子部品はＩＣ・抵抗等が搭載されている基板と、リードフレームから成り、基板とリードフレームはワイヤボンディングで接続されている。基板とリードフレームのワイヤ接続部は、ワイヤボンディング性確保のため、めっきが施されている。   The electronic component includes a substrate on which an IC, a resistor, and the like are mounted, and a lead frame, and the substrate and the lead frame are connected by wire bonding. The wire connection portion between the substrate and the lead frame is plated to ensure wire bonding.

電子部品を樹脂モールドで封止する際に、リードフレームと樹脂との密着性確保は、耐水・耐油性を確保するために重要な要素である。密着性確保のために、リードフレーム表面を粗化する方法が提案されている。粗化方法には、物理的に粗化するもの、化学的に粗化するものがある。   When sealing electronic components with a resin mold, ensuring the adhesion between the lead frame and the resin is an important factor for ensuring water resistance and oil resistance. In order to secure adhesion, a method of roughening the surface of the lead frame has been proposed. The roughening method includes a physical roughening method and a chemical roughening method.

化学的に粗化する方法では、上記めっき部の粗化を防ぐため、めっき部にマスキングを施してから粗化処理をして、終了後にマスキングを剥離するのが一般的である（特許文献１参照）。   In the method of chemically roughening, in order to prevent the roughening of the plating part, it is common to mask the plating part and then perform the roughening treatment, and then remove the masking after completion (Patent Document 1). reference).

特開平７−３２６６９８号公報JP-A-7-326698

特許文献１によれば、粗化面形成の際、めっき部の粗化を防ぐため、めっき部にマスキングテープを貼付する工程及びテープを剥離する工程があり、生産性が十分に考慮されていなかった。   According to Patent Document 1, there is a step of applying a masking tape to the plating portion and a step of peeling the tape in order to prevent the plating portion from being roughened during the formation of the roughened surface, and productivity is not sufficiently considered. It was.

本発明の目的は、より高い生産性を有する電子ユニットを得ることである。   The object of the present invention is to obtain an electronic unit with higher productivity.

上記課題を解決するため、本発明の電子ユニットは、電子部品を実装した基板と、前記基板を固定するリードフレームと、前記リードフレームに設けられているスポットニッケルめっき部と、前記基板と前記リードフレームを電気的に接続するワイヤと、前記基板とリードフレームの一部とを封止する樹脂とを有し、前記スポットニッケル部は、所定の結晶粒径の第１のめっき層と、前記第１のめっき層を覆うように設けられ、当該第１のめっき層よりも結晶粒径が小さい第２のめっき層とからなる。   In order to solve the above problems, an electronic unit according to the present invention includes a substrate on which electronic components are mounted, a lead frame for fixing the substrate, a spot nickel plating portion provided on the lead frame, the substrate and the lead. A wire for electrically connecting a frame; and a resin for sealing the substrate and a part of the lead frame; the spot nickel portion includes a first plating layer having a predetermined crystal grain size; And a second plating layer having a crystal grain size smaller than that of the first plating layer.

本発明によれば、より高い生産性を有する電子ユニットを得ることができる。   According to the present invention, an electronic unit having higher productivity can be obtained.

電子ユニットの外観及び内観を示す図。The figure which shows the external appearance and internal appearance of an electronic unit. リードフレームのピン部の先端を示す図。The figure which shows the front-end | tip of the pin part of a lead frame. 電子ユニットの生産工程を示すフロー図。The flowchart which shows the production process of an electronic unit. スポットニッケルめっき部の構成を示す図。The figure which shows the structure of a spot nickel plating part. スポットニッケルめっき装置を示す図。The figure which shows a spot nickel plating apparatus. スポットニッケルめっき時の電流プロファイルを示す図。The figure which shows the electric current profile at the time of spot nickel plating.

以下、本発明の実施例について説明する。   Examples of the present invention will be described below.

図１は電子ユニットの外観及び内部を示している。   FIG. 1 shows the exterior and interior of the electronic unit.

電子ユニットは樹脂１３０にて封止されている。   The electronic unit is sealed with a resin 130.

電子ユニットの内部は、ピン部２００を有するリードフレーム１００上に、抵抗１１１及びコンデンサ１１２及びＩＣ１１３等の電子部品を有する基板１１０を配置し、基板１１０の基板ボンディング部１１４とピン部２００はワイヤ１２０にて接合されたものである。   Inside the electronic unit, a substrate 110 having electronic components such as a resistor 111, a capacitor 112, and an IC 113 is disposed on a lead frame 100 having a pin portion 200. The substrate bonding portion 114 and the pin portion 200 of the substrate 110 are connected to a wire 120. It is joined by.

図２はピン部２００の先端部を示したものである。スポットニッケルめっき部４００と無めっき部２１０で成り立っており、無めっき部２１０には樹脂１３０との密着性を高めるため、粗化面が形成されている。   FIG. 2 shows the tip of the pin part 200. The spot nickel plating part 400 and the non-plating part 210 are comprised, and the roughened surface is formed in the non-plating part 210 in order to improve adhesiveness with the resin 130. FIG.

図３は、電子ユニットの生産工程を示したものである。   FIG. 3 shows an electronic unit production process.

まず、前処理として、リードフレーム１００に電解脱脂（ステップ３１），化学研磨（ステップ３２），酸活性（ステップ３３）を行う。   First, as pretreatment, the lead frame 100 is subjected to electrolytic degreasing (step 31), chemical polishing (step 32), and acid activation (step 33).

次に、ニッケルめっき（ステップ３４）を行い、ワイヤボンディングを施す部分のみにスポットニッケルめっき部４００を形成する。   Next, nickel plating (step 34) is performed, and the spot nickel plating part 400 is formed only in the part which performs wire bonding.

ステップ３４では、図５に示すように、スポットニッケルめっき部４００に対応する部分に穴が開いたマスク５０５の上に、めっき面を下に向けたリードフレーム１００を設置する。プレス５００でリードフレーム１００を上部から押さえ、位置がずれないように固定する。その状態で、ニッケルめっき液５１０を下方から噴流状にして吹きつける。この時ニッケルめっき液５１０は、マスク５０５により、リードフレーム１００のワイヤボンディングを施す部分にのみ吹きつけられる。   In step 34, as shown in FIG. 5, the lead frame 100 with the plating surface facing down is placed on the mask 505 having a hole in the portion corresponding to the spot nickel plating portion 400. The lead frame 100 is pressed from above by a press 500 and fixed so as not to be displaced. In this state, the nickel plating solution 510 is sprayed from below. At this time, the nickel plating solution 510 is sprayed only on the portion of the lead frame 100 where wire bonding is performed by the mask 505.

この状態でリードフレーム１００とニッケル陽極５１５との間で電源５２０を用いて通電させると、リードフレーム１００上の、マスク５０５の穴の開いた部分に対応する箇所にスポットニッケルめっき部４００が形成される。   In this state, when a current is applied between the lead frame 100 and the nickel anode 515 using the power source 520, the spot nickel plating portion 400 is formed on the lead frame 100 at a location corresponding to the holed portion of the mask 505. The

また、図４に示すように、このスポットニッケルめっき部４００のめっきは、厚さ約０.１〜１０μｍの結晶粒径の大きいめっき層４１０と、厚さ約０.０１〜１０μｍのニッケル結晶粒径が小さいめっき層４１５との二層から成る。めっき層４１０は結晶粒径が大きく、単位時間当たりに形成される層の厚みが大きくなり、ワイヤボンディング性が向上する。一方、めっき層４１５は結晶粒径が小さいため、単位時間当たりに形成される層の厚みは小さいが、後述の粗化工程にて粗化されにくい。ゆえに、本実施例ではワイヤボンディング性を確保しつつ、めっき部を保護するためのマスキングを不要とすることができる。これら二層は単独のめっき槽で、図６に示すように電流値を連続的に変化させることで一工程にて形成される。   As shown in FIG. 4, the spot nickel plating portion 400 is plated by a plating layer 410 having a thickness of about 0.1 to 10 μm and a crystal grain having a thickness of about 0.01 to 10 μm. It consists of two layers with a plating layer 415 having a small diameter. The plating layer 410 has a large crystal grain size, and the thickness of the layer formed per unit time increases, thereby improving wire bonding properties. On the other hand, since the plating layer 415 has a small crystal grain size, the thickness of the layer formed per unit time is small, but is not easily roughened in the roughening step described later. Therefore, in this embodiment, masking for protecting the plated portion can be made unnecessary while securing the wire bonding property. These two layers are independent plating tanks and are formed in one step by continuously changing the current value as shown in FIG.

本実施例では、めっき層４１０を電流密度１０〜１００Ａ／ｄｍ2、めっき層４１５を電流密度０.１〜３０Ａ／ｄｍ2で形成しているが、所定の結晶粒径を得られる電流密度であれば、これらとは異なる電流密度であってもよい。 In this embodiment, the plating layer 410 is formed with a current density of 10 to 100 A / dm 2 , and the plating layer 415 is formed with a current density of 0.1 to 30 A / dm 2. If present, the current density may be different from these.

スポットニッケルめっき部４００を形成後、リードフレーム１００を洗浄する（ステップ３５）。その後、リードフレーム１００全体に粗化を行う（ステップ３６）。この時、スポットニッケルめっき部４００は、結晶粒径の小さいめっき層４１５で保護されているため粗化されない。   After forming the spot nickel plating portion 400, the lead frame 100 is washed (step 35). Thereafter, the entire lead frame 100 is roughened (step 36). At this time, the spot nickel plating portion 400 is not roughened because it is protected by the plating layer 415 having a small crystal grain size.

本実施例ではマスキング貼付工程・マスキング剥離工程が無いので、工程数低減と納期の短縮が可能である。また、マスキング等を行わないので、めっき部を除くリードフレーム全面に安定して粗化面を形成することが可能である。   In this embodiment, since there is no masking sticking step and masking peeling step, the number of steps can be reduced and the delivery time can be shortened. Further, since no masking or the like is performed, a roughened surface can be stably formed on the entire surface of the lead frame excluding the plated portion.

１００ リードフレーム
１１０ 基板
１１１ 抵抗
１１２ コンデンサ
１１３ ＩＣ
１１４ 基板ボンディング部
１１５ ワイヤ
１３０ 樹脂
２００ ピン部 100 Lead frame 110 Substrate 111 Resistor 112 Capacitor 113 IC
114 Substrate bonding part 115 Wire 130 Resin 200 Pin part

Claims (4)

電子部品を実装した基板と、前記基板を固定するリードフレームと、前記リードフレームに設けられているスポットニッケルめっき部と、前記基板と前記リードフレームを電気的に接続するワイヤと、前記基板とリードフレームの一部とを封止する樹脂とを有し、前記スポットニッケルめっき部は、所定の結晶粒径の第１のめっき層と、前記第１のめっき層を覆うように設けられ、当該第１のめっき層よりも結晶粒径が小さい第２のめっき層とからなる電子ユニット。   A board on which electronic components are mounted, a lead frame for fixing the board, a spot nickel plating portion provided on the lead frame, a wire for electrically connecting the board and the lead frame, and the board and the lead A resin that seals a part of the frame, and the spot nickel plating portion is provided so as to cover the first plating layer having a predetermined crystal grain size and the first plating layer. An electronic unit comprising a second plating layer having a crystal grain size smaller than that of the first plating layer. 前記スポットニッケルめっき部の周囲に無めっき部を有している請求項１記載の電子ユニット。   The electronic unit according to claim 1, further comprising an unplated portion around the spot nickel plated portion. 電子部品を実装した基板と、前記基板を固定するリードフレームと、前記リードフレームに設けられているスポットニッケルめっき部と、前記基板と前記リードフレームを電気的に接続するワイヤと、前記基板とリードフレームの一部とを封止するモールド樹脂とを有する電子ユニットの製造方法において、前記リードフレームに第１のニッケルめっき層を形成する第１のステップと、前記第１のステップで形成した第１のめっき層を覆うように、当該第１のめっき層よりも結晶粒径の小さい第２のめっき層を形成する第２のステップと、粗化剤によって前記リードフレームの表面を粗化する第３のステップと、前記リードフレームに前記基板を配置し、前記第２のステップで形成した第２のめっき層表面に、前記ワイヤを接合する第４のステップと、前記樹脂を前記ユニットに流し込む第５のステップとを有する電子ユニットの製造方法。   A board on which electronic components are mounted, a lead frame for fixing the board, a spot nickel plating portion provided on the lead frame, a wire for electrically connecting the board and the lead frame, and the board and the lead In a method for manufacturing an electronic unit having a mold resin for sealing a part of a frame, a first step of forming a first nickel plating layer on the lead frame, and a first step formed by the first step A second step of forming a second plating layer having a crystal grain size smaller than that of the first plating layer so as to cover the plating layer, and a third step of roughening the surface of the lead frame with a roughening agent. And a fourth step of placing the substrate on the lead frame and bonding the wire to the surface of the second plating layer formed in the second step. -Up and method of manufacturing an electronic unit and a fifth step of pouring the resin into the unit. 前記第１のめっき層と、当該第１のめっき層よりも結晶粒径が小さい第２のめっき層とが、単独のめっき槽で一工程にて形成される請求項３記載の電子ユニットの製造方法。   4. The manufacturing of an electronic unit according to claim 3, wherein the first plating layer and the second plating layer having a crystal grain size smaller than that of the first plating layer are formed in one step in a single plating tank. Method.
JP2009142862A 2009-06-16 2009-06-16 Electronic unit Withdrawn JP2011003565A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3057123A4 (en) * 2013-10-07 2017-09-13 Furukawa Electric Co., Ltd. Joining structure and electronic member-joining structural body
JP2021036625A (en) * 2019-06-06 2021-03-04 ヌヴォトンテクノロジージャパン株式会社 Semiconductor light-emitting element and semiconductor light-emitting device

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JPS6113950A (en) * 1984-06-28 1986-01-22 株式会社　モルテン Production of cast crown
JPS63157452A (en) * 1986-12-20 1988-06-30 Shinko Electric Ind Co Ltd Lead frame
JPH01162252A (en) * 1987-12-19 1989-06-26 Fujitsu Ltd Optical disk
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3057123A4 (en) * 2013-10-07 2017-09-13 Furukawa Electric Co., Ltd. Joining structure and electronic member-joining structural body
JP2021036625A (en) * 2019-06-06 2021-03-04 ヌヴォトンテクノロジージャパン株式会社 Semiconductor light-emitting element and semiconductor light-emitting device
JP6990288B2 (en) 2019-06-06 2022-01-12 ヌヴォトンテクノロジージャパン株式会社 Semiconductor light emitting device
US11258001B2 (en) 2019-06-06 2022-02-22 Nuvoton Technology Corporation Japan Semiconductor light-emitting element and semiconductor light-emitting device
US12002914B2 (en) 2019-06-06 2024-06-04 Nuvoton Technology Corporation Japan Semiconductor light-emitting element and semiconductor light-emitting device

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