JP2010271445A - Electro-optical device and method for manufacturing electro-optical device - Google Patents

Abstract

An electro-optical device capable of improving quality (electro-optical characteristics) and a method for manufacturing the electro-optical device are provided.
A film formation substrate 11a, a region of a light emitting element 27 provided on a surface (element formation side) of the film formation substrate 11a, and a magnetic layer provided on a back surface facing the surface of the film formation substrate 11a. A body membrane 40.
[Selection] Figure 8

Description

  The present invention relates to an electro-optical device having a functional layer formed using a film formation mask and a method for manufacturing the electro-optical device.

  As one of the electro-optical devices, for example, there is an organic EL (electroluminescence) device having a structure in which an organic film such as a light emitting layer is sandwiched between an anode and a cathode. As a method for forming the organic film, there is a method of selectively forming an organic film corresponding to each color of RGB using a vapor deposition mask as a film formation mask. The vapor deposition mask is a metal mask that can be brought into close contact with the film formation substrate using a magnet, as described in Patent Document 1, for example.

  Specifically, first, a metal mask is closely attached to the deposition target substrate using a magnet. Next, a vapor deposition material to be an organic film is vapor-deposited on the deposition target substrate through the metal mask. Thus, RGB organic films (light emitting layers) are formed on the deposition target substrate.

JP 2006-152339 A

  However, when the film formation substrate is bent (warped), even if the film formation substrate is pressed by the magnet and the metal mask, the bending position may not be suppressed, for example, the bending position may be changed. As a result, a gap is generated between the film formation substrate and the vapor deposition mask, which causes a problem that the vapor deposited organic film is blurred. Specifically, a regular film thickness cannot be obtained, or an organic film protrudes to an adjacent pixel. Furthermore, in order to avoid this problem, if the distance between the organic film and the adjacent organic film is widened, there are problems that the definition is lowered and the aperture ratio is reduced.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 An electro-optical device according to this application example includes a deposition substrate, an electro-optic element provided on a first surface of the deposition substrate, and a second surface facing the first surface. And a magnetic film provided.

According to this configuration, since the magnetic film is formed on the second surface of the film formation substrate, for example, the electro-optic is selectively used by using the film formation mask on the first surface of the film formation substrate. When the film constituting the element is formed, if the film formation substrate is sandwiched between a magnet and a metal mask (metal mask), the film formation substrate is moved to the magnet side by the force with which the metal mask is attracted to the magnet. Pressed. Furthermore, the deposition target substrate itself is attracted by the magnet, so that the warpage of the deposition target substrate can be reduced, and the adhesion between the deposition target substrate and the deposition mask can be further improved. . Accordingly, it is possible to suppress blurring of the film formed on the first surface, and it is possible to provide an electro-optical device with improved definition.
In addition, when the magnetic film side is charged due to the magnet, the adhesion between the deposition target substrate and the mask is improved. Furthermore, when the film formation substrate and the mask are peeled off, the magnetic film side is charged, so that the first surface of the film formation substrate, that is, the film formation surface, can be prevented from being damaged by static electricity.

  Application Example 2 In the electro-optical device according to the application example, it is preferable that the magnetic film is formed so as to avoid a region that overlaps a region where the electro-optical element is provided in a plane.

  According to this configuration, since the magnetic film is formed so as to avoid the area overlapping the area where the electro-optic element is provided in a plane, for example, even if the magnetic film has a light shielding property, The light transmittance of the deposition target substrate in the element region can be ensured. That is, light can be extracted from both the first surface and the second surface.

  Application Example 3 In the electro-optical device according to the application example described above, the electro-optical element is a light-emitting element, and the magnetic film avoids a region overlapping the region where the light-emitting element is provided in a plane. A film is preferably formed.

  According to this configuration, since the magnetic film is formed so as to avoid a region overlapping the region where the light emitting element is provided in a plane, for example, even if the magnetic film has a light shielding property, The light transmittance of the deposition target substrate in the region can be ensured. In other words, the present invention can be applied to a top emission type electro-optical device that extracts light from the first surface side and a bottom emission type electro-optical device that extracts light from the second surface side.

  Application Example 4 In the electro-optical device according to the application example described above, the deposition target substrate is a mother substrate on which a plurality of electro-optical devices are attached, and the magnetic film is planarly provided with individual electro-optical devices. The film is preferably formed so as to avoid a region overlapping with a region where the device is formed.

  According to this configuration, since the magnetic film is formed so as to avoid a region overlapping with the region where the individual electro-optical devices are formed in a plane, even if the magnetic film has a light shielding property, for example, In addition, it is possible to ensure the light transmittance of the film formation substrate in the region where the individual electro-optical devices are formed.

  Application Example 5 In the electro-optical device according to the application example, it is preferable that the magnetic film contains a nonmagnetic metal material at 10 at% or less.

  According to this configuration, chemically stable physical properties can be obtained by adding a nonmagnetic metal material to the magnetic film. Furthermore, by setting the content of the nonmagnetic metal material to 10 at% or less, a magnetic film that reaches saturation magnetization can be configured without using a very strong magnet.

  [Application Example 6] A method of manufacturing an electro-optical device according to this application example includes a magnetic film forming step of forming a magnetic film on one surface of a film formation substrate, and the other surface of the film formation substrate. An element forming step of forming an electro-optic element, wherein the element forming step includes disposing a magnet on the one surface side and disposing a metal film-forming mask on the other surface side, A placement step of superimposing the deposition mask and the deposition target substrate, and a film formation step of forming a film constituting the electro-optic element on the deposition target substrate via the deposition mask. It is characterized by that.

According to this method, since the magnetic film is formed on one surface of the film formation substrate by the magnetic film formation process, the metal film formation mask (metal mask), the film formation substrate, and the magnet are arranged in the arrangement process. Are stacked, the deposition substrate is pressed toward the magnet by the force with which the deposition mask is attracted to the magnet. Furthermore, the deposition target substrate itself is attracted by the magnet, so that the warpage of the deposition target substrate can be reduced, and the adhesion between the deposition target substrate and the deposition mask can be further improved. . Therefore, blurring of a film formed on the other surface can be suppressed, and the definition can be improved.
Further, static electricity is charged to the magnetic film due to the magnet, so that the adhesion between the deposition target substrate and the deposition mask is improved. Furthermore, by charging the magnetic film with static electricity, it is possible to prevent the other surface of the film formation substrate, that is, the film formation surface from being damaged by static electricity when the film formation substrate and the film formation mask are peeled off. it can.

  Application Example 7 In the method of manufacturing an electro-optical device according to the application example, the magnetic film forming step includes forming the magnetic body in a region overlapping with a region where the electro-optical element is formed in a plane. It is preferable to include an etching step of removing the film by etching.

  According to this method, since the magnetic film in the region overlapping the region where the electro-optic element is formed in a plane is removed by etching, for example, even if the magnetic film has a light shielding property, The light transmittance of the deposition target substrate in the region can be ensured. That is, light can be extracted from both the first surface and the second surface.

  Application Example 8 In the method of manufacturing an electro-optical device according to the application example, the electro-optical element is a light-emitting element, and the magnetic film forming step overlaps a region where the light-emitting element is formed in a plane. It is preferable to include an etching step of etching and removing the magnetic film formed in the region.

  According to this method, the magnetic film in the region overlapping the region where the light emitting element is formed in a planar manner is removed by etching, so that, for example, in the region of the light emitting element even if the magnetic film has a light shielding property The light transmittance of the film formation substrate can be ensured. In other words, it is possible to form a top emission type electro-optical device that extracts light from the other surface side or a bottom emission type electro-optical device that extracts light from one surface side.

  Application Example 9 In the method of manufacturing an electro-optical device according to the application example, the deposition target substrate is a mother substrate on which a plurality of electro-optical devices are attached, and the magnetic film forming step is planar. It is preferable that the method further includes an etching step of etching and removing the magnetic film formed in a region overlapping with a region where each electro-optical device is formed.

  According to this method, the magnetic film in the region overlapping with the region where each electro-optical device is formed in a plane is removed by etching. For example, even if the magnetic film has a light shielding property, The light transmittance of the deposition target substrate in the region can be ensured.

FIG. 3 is an equivalent circuit diagram illustrating an electrical configuration of the organic EL device. The schematic plan view which shows the structure of an organic electroluminescent apparatus. The schematic cross section which shows the structure of an organic electroluminescent apparatus. The schematic cross section which shows the structure of a vapor deposition apparatus. The schematic plan view which shows the structure of the mask for film-forming. FIG. 6 is a schematic cross-sectional view along the line AA ′ of the film forming mask shown in FIG. 5. The schematic cross section which shows the vapor deposition method using the film-forming mask in order of a process. The schematic cross section which shows the vapor deposition method using the film-forming mask in order of a process. The schematic cross section which shows the vapor deposition method using the film-forming mask in order of a process. The schematic cross section which shows the vapor deposition method using the film-forming mask in order of a process. The schematic cross section which shows the vapor deposition method using the film-forming mask in order of a process. The schematic cross section which shows the vapor deposition method using the film-forming mask in order of a process. (A) is a schematic plan view which shows the film-forming pattern of the magnetic film provided in the film-forming substrate, (b) is a schematic cross section along the BB 'line of the film-forming pattern shown to (a). . (A) is a schematic plan view which shows the film-forming pattern of the magnetic film provided in the film-forming substrate, (b) is a schematic cross section along the CC 'line of the film-forming pattern shown to (a). .

<Configuration of electro-optical device>
FIG. 1 is an equivalent circuit diagram showing an electrical configuration of an organic EL device as an electro-optical device. Hereinafter, the electrical configuration of the organic EL device will be described with reference to FIG.

  As shown in FIG. 1, the organic EL device 11 includes a plurality of scanning lines 12, a plurality of signal lines 13 extending in a direction intersecting the scanning lines 12, and a plurality of power supply lines 14 extending in parallel to the signal lines 13. Are wired in a grid pattern. An area partitioned by the scanning line 12 and the signal line 13 is configured as a pixel area. The signal line 13 is connected to the signal line drive circuit 15. The scanning line 12 is connected to the scanning line driving circuit 16.

  Each pixel region holds a switching TFT (Thin Film Transistor) 21 to which a scanning signal is supplied to the gate electrode via the scanning line 12 and a pixel signal supplied from the signal line 13 via the switching TFT 21. A storage capacitor 22 is provided, and a driving TFT 23 (hereinafter referred to as “TFT element 23”) to which a pixel signal held by the storage capacitor 22 is supplied to the gate electrode is provided. Further, in each pixel region, when electrically connected to the power supply line 14 via the TFT element 23, an anode 24, a cathode 25, and an anode 24 and a cathode 25 into which drive current flows from the power supply line 14. A functional layer 26 sandwiched therebetween is provided.

  The organic EL device 11 includes a plurality of light-emitting elements 27 as electro-optical elements configured by an anode 24, a cathode 25, and a functional layer 26. In addition, the organic EL device 11 includes a display area composed of a plurality of light emitting elements 27.

  According to this configuration, when the scanning line 12 is driven and the switching TFT 21 is turned on, the potential of the signal line 13 at that time is held in the holding capacitor 22, and the TFT element 23 depends on the state of the holding capacitor 22. ON / OFF state is determined. Then, a current flows from the power supply line 14 to the anode 24 through the channel of the TFT element 23, and further a current flows to the cathode 25 through the functional layer 26. The functional layer 26 emits light with a luminance corresponding to the amount of current flowing therethrough.

  FIG. 2 is a schematic plan view showing the configuration of the organic EL device. Hereinafter, the configuration of the organic EL device will be described with reference to FIG.

  As shown in FIG. 2, the organic EL device 11 (panel) includes a display region 32 (region inside the dashed line in the drawing) and a non-display region 33 (region outside the dashed line) on the element substrate 31 made of glass or the like. It has the composition which has. The display area 32 is provided with an actual display area 32a (area inside the two-dot chain line) and a dummy area 32b (area outside the two-dot chain line in the figure).

  In the actual display area 32a, sub-pixels 34 (light emitting areas) from which light is emitted are arranged in a matrix. Each of the sub-pixels 34 emits light of R (red), G (green), and B (blue) in accordance with the operation of the switching TFT 21 and the TFT element 23 (see FIG. 1). .

  In the dummy area 32b, a circuit for mainly causing each sub-pixel 34 to emit light is provided. For example, the scanning line driving circuit 16 is disposed along the left side and the right side of the actual display region 32a in the drawing, and the inspection circuit 35 is disposed along the upper side of the actual display region 32a in the drawing.

  A flexible substrate 36 is provided on the lower side of the element substrate 31. The flexible substrate 36 is provided with a driving IC 37 connected to each wiring.

  FIG. 3 is a schematic cross-sectional view showing the structure of the organic EL device. Hereinafter, the structure of the organic EL device will be described with reference to FIG. In addition, in order to show the configuration in an easy-to-understand manner, the layer thickness, dimensional ratio, angle, and the like of each component are appropriately changed. Moreover, this embodiment demonstrates the organic EL apparatus 11 of a top emission structure as an example.

  As shown in FIG. 3, the organic EL device 11 emits light in the light emitting region 41, and includes an element substrate 31, a circuit element layer 42 formed on the element substrate 31, and a circuit element layer 42. The formed light emitting element layer 43, the cathode 25 formed on the light emitting element layer 43, and the back surface of the element substrate 31 (the lower surface of the element substrate 31 in FIG. 3 and the circuit element layer 42 is provided. And a magnetic film 40 formed on the opposite surface). Examples of the element substrate 31 include a glass substrate, quartz, and plastic. The organic EL device 11 shown in FIG. 3 employs a top emission structure in which light emitted from the light emitting layer 44 is emitted from the cathode 25 side by using a transparent material for the cathode.

In the circuit element layer 42, a base protective film 51 made of a silicon oxide film (SiO ₂ ) is formed on the element substrate 31, and the TFT element 23 is formed on the base protective film 51. Specifically, an island-shaped semiconductor film 52 made of a polysilicon film is formed on the base protective film 51. A source region 53 and a drain region 54 are formed in the semiconductor film 52 by introducing impurities. A portion where no impurity is introduced is a channel region 55.

Further, a transparent gate insulating film 56 made of a silicon oxide film or the like covering the base protective film 51 and the semiconductor film 52 is formed on the circuit element layer 42. A gate electrode 57 made of aluminum (Al), molybdenum (Mo), tantalum (Ta), titanium (Ti), tungsten (W) or the like is formed on the gate insulating film 56. A transparent first interlayer insulating film 58 and second interlayer insulating film 59 are formed on the gate insulating film 56 and the gate electrode 57. The first interlayer insulating film 58 and the second interlayer insulating film 59 are composed of, for example, a silicon oxide film (SiO ₂ ), a titanium oxide film (TiO ₂ ), or the like. The gate electrode 57 is provided at a position corresponding to the channel region 55 of the semiconductor film 52.

  The source region 53 of the semiconductor film 52 is electrically connected to the signal line 13 formed on the first interlayer insulating film 58 through a contact hole 61 provided through the gate insulating film 56 and the first interlayer insulating film 58. Connected. On the other hand, the drain region 54 is formed on the second interlayer insulating film 59 through a contact hole 62 provided through the gate insulating film 56, the first interlayer insulating film 58, and the second interlayer insulating film 59. It is electrically connected to the anode 24 (illustration of penetration through the gate insulating film 56 is omitted in the figure).

  The anode 24 is formed for each light emitting region 41 (pixel). The anode 24 is made of a transparent ITO (Indium Tin Oxide) film and has, for example, a substantially rectangular shape in plan view. In the circuit element layer 42, a storage capacitor and a switching transistor (not shown) are formed. In this manner, the driving transistor connected to each anode 24 is formed in the circuit element layer 42.

  Although not shown, a reflective layer made of aluminum or the like is provided below the anode 24 (on the second interlayer insulating film 59 side) via an insulating layer. The reflective layer reflects light emitted from the functional layer 26 toward the cathode 25 side.

  The light emitting element layer 43 including the anode 24 is provided on the element substrate 31 with the light emitting elements 27 arranged in a matrix. More specifically, the light emitting element layer 43 is mainly composed of a functional layer 26 formed on the anode 24 and an insulating film 64 that insulates the functional layer 26. A cathode 25 is disposed on the functional layer 26 and the insulating film 64. The anode 24, the functional layer 26, and the cathode 25 constitute a light emitting element 27.

  In the functional layer 26, for example, a hole injection / transport layer 65, a light emitting layer 44 (organic light emitting layer), and an electron injection / transport layer (not shown) are sequentially stacked. The hole injection / transport layer 65 is configured by laminating a hole injection layer and a hole transport layer, and is formed, for example, over the entire element substrate 31. The electron injection / transport layer is formed by stacking an electron transport layer and an electron injection layer.

  The light emitting layer 44 is a layer of an organic light emitting material (organic material) that exhibits an electroluminescence phenomenon. By applying a voltage between the anode 24 and the cathode 25, holes are injected from the hole injection transport layer 65 and electrons are injected from the cathode 25 into the light emitting layer 44. In the light emitting layer 44, light is emitted when holes and electrons are combined. A part of the light from the light emitting layer 44 is directly transmitted through the cathode 25, and a part of the light is reflected by the reflective layer and then transmitted through the cathode 25. The light emitting layers 44 for each of the RGB colors are selectively formed using a film formation mask described later.

  The cathode 25 is formed so as to cover the light emitting layer 44 and the insulating film 64. In other words, the cathode 25 is formed on the opposite side of the anode 24 with the light emitting layer 44 interposed therebetween. The cathode 25 has translucency and is made of, for example, an ITO (Indium Tin Oxide) film.

  On the cathode 25, a sealing layer 66 made of a transparent resin or the like is stacked to prevent moisture and oxygen from entering. The sealing layer 66 is made of, for example, an epoxy resin or an acrylic resin. The light emitting element 27 is configured by the light emitting element layer 43 (the anode 24 and the functional layer 26) and the cathode 25.

  In the organic EL device 11, the magnetic film 40 is formed on the back side of the element substrate 31 (on the side opposite to the element formation side). Specifically, the magnetic film 40 contains a ferromagnetic material such as Fe (iron), Co (cobalt), Ni (nickel), a mixture thereof, or a nonmagnetic metal material in these ferromagnetic materials. Things are used. The content of the nonmagnetic metal material is preferably 10 at% or less. Thereby, even if it is not a very strong magnet, the magnetic film 40 which reaches | attains saturation magnetization is realizable.

  By containing the non-magnetic metal material, physical and chemical stability as the magnetic film 40 can be achieved. Examples of the nonmagnetic metal material include Zn (zinc), Mo (molybdenum), W (tungsten), Re (rhenium), and Pt (platinum).

  The organic EL device 11 having such a magnetic film 40 can be in close contact with the magnet 76 (see FIG. 4) under the influence of a magnetic field of a magnet 76 (see FIG. 4) described later. Hereinafter, a vapor deposition apparatus used for selectively forming the light emitting layer 44 and the like will be described.

  FIG. 4 is a schematic cross-sectional view showing the structure of the vapor deposition apparatus. Hereinafter, the structure of the vapor deposition apparatus will be described with reference to FIG.

  In the organic EL device 11 described above, the element substrate 31 to the hole injecting and transporting layer 65 (see FIG. 3) will be referred to as a film formation substrate 11a. A vapor deposition apparatus 71 for selectively vapor-depositing the light emitting layer 44 of each color (red, green, blue) on the surface (first surface, other surface) of the film formation substrate 11a will be described.

  As shown in FIG. 4, the vapor deposition apparatus 71 is provided with a chamber 72, a vapor deposition source 73 that is provided at the bottom of the chamber 72 and stores and evaporates the film forming material, and is opposed to the vapor deposition source 73. And a substrate holding portion 74 that holds the film formation substrate 11a in a substantially horizontal state. In addition, a decompression device (not shown) that decompresses the chamber 72 to a predetermined degree of vacuum is provided.

  The substrate holding part 74 includes a support body 74 b having a holding part 74 a on the outer edge side, and a rotating shaft 75 provided on the support body 74 b and suspending the support body 74 b in the chamber 72.

  The holding portion 74 a has a clamp-like shape, and holds the peripheral portion of the stacked body including the deposition mask 81, the deposition target substrate 11 a, and the magnet 76 that are sequentially stacked. That is, the film formation mask 81 is arranged between the vapor deposition source 73 and the film formation substrate 11a when the thin film (light emitting layer 44) is patterned (vapor deposition) on the film formation substrate 11a.

  More specifically, the film formation mask 81 is formed with a plurality of opening holes 82 (see FIGS. 5 and 6) corresponding to the size of the sub-pixel 34 (see FIG. 2) constituting the organic EL device 11. ing. Further, the deposition target substrate 11 a and the deposition mask 81 are positioned and overlapped, and the deposition target substrate 11 a is sandwiched between the magnet 76 and the deposition mask 81 by the holding portion 74 a.

  The film forming mask 81 is configured to be attracted to the magnet 76 side by the magnetic force of the magnet 76. The film formation substrate 11 a can be brought into close contact with the film formation mask 81 by the film formation mask 81 being attracted to the magnet 76 side, and is fixed between the film formation mask 81 and the magnet 76. The Furthermore, since the magnetic film 40 is provided on the back surface (second surface, one surface) of the film formation substrate 11 a (organic EL device 11), the film formation substrate 11 a itself is also attracted to the magnet 76.

  Further, the deposition target substrate 11 a is pressed toward the magnet 76 by the force with which the deposition mask 81 is attracted to the magnet 76. Further, the deposition target substrate 11a itself is attracted to the magnet 76, so that the warpage of the deposition target substrate 11a can be relaxed, and the adhesion between the deposition target substrate 11a and the deposition mask 81 is further improved. Can be made. Therefore, blurring of the thin film (light emitting layer 44) formed on the deposition target substrate 11a can be suppressed.

  In the vapor deposition source 73, any film forming material of the light emitting layer 44 (the red light emitting layer 44R, the green light emitting layer 44G, and the blue light emitting layer 44B) constituting the functional layer 26 is stored and heated. Evaporates. While these film forming materials are vapor-deposited, the rotating shaft 75 rotates to rotate the deposition target substrate 11a held by the substrate holding portion 74. As a result, the light emitting layer 44 can be formed on the deposition target substrate 11a in a state where blurring is suppressed.

  FIG. 5 is a schematic plan view showing the structure of the film forming mask. 6 is a schematic cross-sectional view taken along the line AA ′ of the film formation mask shown in FIG. Hereinafter, the structure of the film forming mask will be described with reference to FIGS.

  In the same manner as described above, the element substrate 31 to the hole injecting and transporting layer 65 will be described as the deposition target substrate 11a. A description will now be given of the film formation mask 81 for selectively depositing the light emitting layer 44 of each color (red, green, and blue) on the film formation substrate 11a.

  In the film formation mask 81, a plurality of opening holes 82 corresponding to the region of the sub-pixel 34 (see FIG. 2) that constitutes the organic EL device 11 in a plan view are arranged. The opening hole 82 is a through hole through which the vapor deposition material emitted from the vapor deposition source 73 (see FIG. 4) passes when vapor deposition is performed.

  The vapor deposition material that has passed through the opening 82 reaches the deposition target substrate 11a. Therefore, the opening area of the opening hole 82 has substantially the same shape as the shape of the thin film (film formation pattern) to be patterned on the film formation substrate 11a.

  The material of the film formation mask 81 is a metal metal mask, for example, Invar having a material structure of Fe-36 wt% Ni.

  Further, it is possible to deposit a plurality of thin films (light-emitting layers 44) constituting the 12 organic EL devices 11 by using a single film formation mask 81. Note that the number of the organic EL devices 11 corresponding to the film formation mask 81 is not limited to the configuration of twelve, and may be arbitrary.

  The film formation mask 81 is formed so that the R (red), G (green), and B (blue) subpixels 34 are formed one by one (that is, the light emitting region 41 unit, see FIG. 3). They are arranged at regular intervals. Further, the group of the opening holes 82 is formed at 12 locations.

<Method of manufacturing electro-optical device>
7 to 12 are schematic cross-sectional views showing a deposition method using a film formation mask, which is a part of a method for manufacturing an organic EL device, in the order of steps. Hereinafter, a vapor deposition method using a film formation mask will be described with reference to FIGS.

  First, in the process shown in FIG. 7 (element formation process, magnetic film formation process), the hole injection / transport layer 65 is formed on the element substrate 31. Specifically, the circuit element layer 42 having the TFT elements 23 is formed on the element substrate 31. Next, the anode 24 (see FIG. 3) and the hole injecting and transporting layer 65 are formed on the circuit element layer 42 using a vacuum deposition method. Further, the magnetic film 40 is formed on the entire back surface of the element substrate 31 by using, for example, a sputtering method. As described above, the state up to this point will be referred to as a deposition target substrate 11a.

  In the step (arrangement step) shown in FIG. 8, a film formation mask 81 is disposed on the film formation substrate 11a (on the hole injection / transport layer 65 side). Specifically, the deposition target substrate 11 a is sandwiched between the deposition mask 81 and the magnet 76. More specifically, the film formation mask 81 made of a metal mask and the film formation substrate 11a having the magnetic film 40 are attracted to the film formation substrate 11a by using the magnetic force of the magnet 76. The mask 81 can be fixed. Further, as described above, the warp generated in the deposition target substrate 11a can be reduced.

  In the step (film formation step) shown in FIG. 9, the light emitting layer 44 is formed in the film formation region on the film formation substrate 11a (on the hole injecting and transporting layer 65) using the film formation mask 81. First, the insulating film 64 is formed on the deposition target substrate 11a (the hole injecting and transporting layer 65) by using a photolithography technique and an etching technique. Thereafter, the red light emitting layer 44R is patterned. Specifically, a film formation mask 81 is disposed between the film formation substrate 11a and the vapor deposition source 73R. Then, the red vapor deposition material 77R emitted from the vapor deposition source 73R passes through the opening 82 of the film formation mask 81 and is vapor deposited on the film formation substrate 11a.

  As described above, the magnetic film 40 is formed on the back surface of the film formation substrate 11 a, and the film formation substrate 11 a itself is attracted by the magnet 76, so that the film formation substrate 11 a and the film formation film are formed. The gap with the mask 81 can be reduced. Therefore, when the light emitting layer 44 (red light emitting layer 44R) is vapor-deposited on the film formation substrate 11a, it is possible to suppress the light emission layer 44 from being blurred due to a large amount of warpage of the film formation substrate 11a.

  In the step shown in FIG. 10, the green light emitting layer 44 </ b> G is patterned on the deposition target substrate 11 a (on the hole injecting and transporting layer 65) using the deposition mask 81. First, the deposition mask 81 is moved by the amount of the sub-pixel 34 (moved to the right side in FIG. 10). Thereafter, the green vapor deposition material 77G emitted from the vapor deposition source 73G passes through the opening 82 of the film formation mask 81 and is vapor deposited on the film formation substrate 11a.

  In the step shown in FIG. 11, the blue light emitting layer 44B is patterned on the deposition target substrate 11a (on the hole injecting and transporting layer 65) using the deposition mask 81. First, the deposition mask 81 is moved by the amount of the sub-pixel 34 (moved to the right side in FIG. 11). Thereafter, the blue vapor deposition material 77B emitted from the vapor deposition source 73B passes through the opening 82 of the film formation mask 81 and is vapor deposited on the film formation substrate 11a. Thus, the light emitting layer 44 (44R, 44G, 44B) is formed on the deposition target substrate 11a.

  In the process shown in FIG. 12, the organic EL device 11 is completed. Specifically, the cathode 25 is formed on the light emitting layer 44 and the insulating film 64. Thereafter, the sealing layer 66 and the like are formed on the cathode 25 to complete the organic EL device 11. In the above embodiment, the film forming mask 81 has been used for vapor deposition. However, the manufacturing method is not limited to this manufacturing method as long as it is a manufacturing method using the film forming mask. It may be.

  As described above in detail, according to the present embodiment, the following effects can be obtained.

  (1) According to this embodiment, since the magnetic film 40 is formed on the back surface of the film formation substrate 11a (organic EL device 11), for example, a film formation mask is formed on the surface of the film formation substrate 11a. When the light emitting layer 44 is selectively formed using 81, the film formation mask 81 is formed on the magnet 76 when the film formation substrate 11 a is sandwiched between the magnet 76 and the film formation mask 81 (metal mask). The film formation substrate 11a is pressed toward the magnet 76 by the attracted force. Further, the deposition target substrate 11a itself is attracted to the magnet 76, so that the warpage of the deposition target substrate 11a can be relaxed, and the adhesion between the deposition target substrate 11a and the deposition mask 81 is further improved. Can be improved. Therefore, blurring of the light emitting layer 44 can be suppressed, and the definition can be improved.

  (2) According to the present embodiment, static electricity is charged in the magnetic film 40 due to the magnetic force of the magnet 76, thereby improving the adhesion between the deposition target substrate 11 a and the deposition mask 81. Furthermore, static electricity is charged in the magnetic film 40, so that the deposition surface of the deposition target substrate 11 a is prevented from being damaged by static electricity when the deposition target substrate 11 a and the deposition mask 81 are separated. it can.

  In addition, embodiment is not limited above, It can also implement with the following forms.

(Modification 1)
As described above, the present invention is not limited to depositing the magnetic film 40 on the entire back surface (the side opposite to the side on which the light emitting layer 44 is formed) of the deposition target substrate 11a. Alternatively, the film may be formed as follows. FIG. 13A is a schematic plan view showing a film formation pattern of a magnetic film provided on a film formation substrate. FIG. 13B is a schematic cross-sectional view taken along line BB ′ of the film formation pattern shown in FIG. As shown in FIG. 13, the film formation pattern of the magnetic film 40 a provided on the back surface of the film formation substrate 11 a is formed except for a region that overlaps the region of the sub-pixel 34 in a plan view. As a forming method, the magnetic film 40a may be selectively patterned using a film formation mask, or the magnetic film formed on the entire back surface of the deposition target substrate 11a may be subjected to photolithography and etching. Patterning may be performed using a technique (etching process).

  According to this, since the magnetic film 40a is formed so as to avoid the area overlapping the area of the sub-pixel 34 in a plan view, even if the magnetic film 40a has a light shielding property, the area of the sub-pixel 34 is not affected. Light transmittance can be secured. That is, light can be extracted from both the front surface and the back surface of the organic EL device 11. In other words, the present invention can be applied not only to the top emission type that extracts light from the front side but also to the bottom emission type organic EL device 11 that extracts light from the back side.

(Modification 2)
As described above, the magnetic film 40 is formed on the entire back surface of the film formation substrate 11a (the side opposite to the film formation side of the light emitting layer 44), or the magnetic film 40a is formed avoiding the region of the sub-pixels 34. It is not limited to forming a film, and the film may be formed as follows. FIG. 14A is a schematic plan view showing a film formation pattern of a magnetic film provided on a film formation substrate. FIG. 14B is a schematic cross-sectional view taken along the line CC ′ of the film formation pattern shown in FIG. As shown in FIG. 14, the film formation pattern of the magnetic film 40b provided on the back surface of the film formation substrate 11a is formed except for a region that overlaps the region of one organic EL device 11 (panel) in a plane. Has been. As a forming method, a method as described in Modification 1 can be used.

  According to this, since the magnetic film 40b is formed so as to avoid a region that overlaps the region of the organic EL device 11 (panel) in a plan view, the organic EL even if the magnetic film 40b has a light shielding property. It becomes possible to ensure light transmittance in the region of the device 11, and as described above, the top emission type organic EL device 11 that extracts light from the front surface side and the bottom emission type organic EL device that extracts light from the back surface side. 11 (high-precision alignment is unnecessary).

(Modification 3)
As described above, the film to be deposited using the film formation mask 81 is not limited to the light emitting layer 44, and other films may be selectively deposited.

(Modification 4)
As described above, instead of forming the red, green, and blue light-emitting layers 44 (44R, 44G, and 44B) while shifting the same film formation mask 81 by the sub-pixel 34, the light-emitting layers 44 of the respective colors. Each of the light emitting layers 44 (44R, 44G, 44B) for each color may be formed by preparing a dedicated film-forming mask for vapor-depositing each. Further, a light emitting layer or the like may be formed on all the sub-pixels 34 in a lump, such as when using white light for illumination. Further, a monochromatic light emitting layer may be formed.

(Modification 5)
As described above, the film formation mask 81 is not limited to being applied to the manufacture of the organic EL device 11, and may be applied to the manufacture of a liquid crystal device, a plasma display, or the like. According to this, each electro-optical characteristic (definition etc.) can be improved.

  DESCRIPTION OF SYMBOLS 11 ... Organic EL device as an electro-optical device, 11a ... Film-forming substrate, 12 ... Scan line, 13 ... Signal line, 14 ... Power supply line, 15 ... Signal line drive circuit, 16 ... Scan line drive circuit, 21 ... Switching TFT, 22 ... holding capacitor, 23 ... TFT element, 24 ... anode, 25 ... cathode, 26 ... functional layer, 27 ... light emitting element as an electro-optic element, 31 ... element substrate, 32 ... display area, 32a ... actual display Area 32b ... dummy area 33 33 non-display area 34 sub-pixel 35 inspection circuit 36 flexible substrate 37 drive IC 40, 40a, 40b magnetic film 41 light emitting area 42 ... Circuit element layer, 43 ... Light emitting element layer, 44, 44R, 44G, 44B ... Light emitting layer, 51 ... Base protective film, 52 ... Semiconductor film, 53 ... Source region, 54 ... Drain region, 55 ... Channel region, 56 ... Gate insulating film, 57 ... gate electrode, 58 ... first interlayer insulating film, 59 ... second interlayer insulating film, 61, 62 ... contact hole, 64 ... insulating film, 65 ... hole injecting and transporting layer, 66 ... sealing. Layer 71, vapor deposition apparatus, 72, chamber, 73, 73R, 73G, 73B ... vapor deposition source, 74 ... substrate holding unit, 74a ... holding unit, 74b ... support, 75 ... rotating shaft, 76 ... magnet, 77R, 77G, 77B ... deposition material, 81 ... deposition mask, 82 ... opening hole.

Claims (9)

A deposition substrate;
An electro-optic element provided on the first surface of the deposition substrate;
A magnetic film provided on a second surface facing the first surface;
An electro-optical device comprising: The electro-optical device according to claim 1,
The electro-optical device, wherein the magnetic film is formed so as to avoid a region overlapping with a region where the electro-optical element is provided in a plane. The electro-optical device according to claim 1,
The electro-optic element is a light emitting element,
The electro-optical device, wherein the magnetic film is formed so as to avoid a region overlapping with a region where the light emitting element is provided in a plane. The electro-optical device according to claim 1,
The film formation substrate is a mother substrate on which a plurality of electro-optical devices are attached.
The electro-optical device is characterized in that the magnetic film is formed so as to avoid a region overlapping a region where each electro-optical device is formed in a plane. The electro-optical device according to any one of claims 1 to 4,
The electro-optical device, wherein the magnetic film contains a nonmagnetic metal material at 10 at% or less. A magnetic film forming step of forming a magnetic film on one surface of the film formation substrate;
An element forming step of forming an electro-optic element on the other surface of the deposition target substrate,
In the element forming step, a magnet is disposed on the one surface side, and a metal film formation mask is disposed on the other surface side, and the film formation mask and the film formation substrate are overlapped. An alignment process to match,
A film forming step of forming a film constituting the electro-optic element on the film formation substrate via the film formation mask;
A method for manufacturing an electro-optical device. The method of manufacturing an electro-optical device according to claim 6,
The magnetic film forming step includes an etching step of etching and removing the magnetic film formed in a region overlapping with a region where the electro-optical element is formed in a plane. Device manufacturing method. The method of manufacturing an electro-optical device according to claim 6,
The electro-optic element is a light emitting element,
The magnetic film forming process includes an etching process for etching and removing the magnetic film formed in a region overlapping the region where the light emitting element is formed in a plane. Manufacturing method. The method of manufacturing an electro-optical device according to claim 6,
The film formation substrate is a mother substrate on which a plurality of electro-optical devices are attached.
The magnetic film forming step includes an etching step of etching and removing the magnetic film formed in a region overlapping with a region where each electro-optical device is formed in a plane. Manufacturing method of optical device.

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