JP2010268412A - MEMS microphone semiconductor device and manufacturing method thereof - Google Patents

Abstract

The present invention provides a MEMS microphone semiconductor device and a method for manufacturing the same, which can suppress the intrusion of cutting water and cutting waste during processing for singulation and improve reliability.
A MEMS microphone semiconductor device comprising: a substrate; one or more semiconductor elements mounted on a first main surface of the substrate; and the one or more semiconductor devices fixed to the first main surface of the substrate. A case that covers a semiconductor element, a through hole that is formed in the substrate or the case and serves as a sound hole, and a plurality of connections that are formed on a second main surface that is opposite to the first main surface of the substrate The through hole is provided with an intrusion suppression shape that can prevent intrusion of cutting water during dicing.
[Selection] Figure 1

Description

  The present invention relates to a MEMS (Micro Electro Mechanical Systems) microphone semiconductor device and a method for manufacturing the same.

  For example, in a MEMS microphone semiconductor device such as a sensor device having a vibrating electrode, a MEMS semiconductor element and a CMOS (Complementary Metal Oxide Semiconductor) semiconductor element are mounted on a substrate and generally covered with a case. is there. In this MEMS microphone semiconductor device, a sound wave enters the inside through a through hole formed in the substrate or the case from the outside, and is converted into an electrical signal and output by the diaphragm structure of the MEMS semiconductor element.

  In addition, a plurality of MEMS microphone semiconductor devices are manufactured by forming them at the same time and then dividing them into individual pieces. The division here is performed by a dicing method or a processing method of cutting with a mold.

  In the dicing method, generally, a processing is performed in which an annular dicing saw on which diamond or CBN (Cubic Boron Nitride) particles are fixed is rotated at high speed to be crushed. In the dicing method, the above processing is performed while flowing cutting water for removing crushed debris and suppressing frictional heat. However, since the diaphragm structure and the beam structure of the MEMS semiconductor element are fragile structures, if the cutting water enters from the sound hole, it may be destroyed by the invading cutting water or cutting waste. In particular, electronic components are becoming smaller as mounting density increases, and the penetration of cutting water or cutting chips into sound holes during the dicing method (individualization) becomes an increasingly problematic issue. It is coming.

  On the other hand, in the processing method in which cutting is performed with a mold, cutting waste is scattered, and the scattered waste is scattered near (intruded into) the sound hole or into the sound hole, adversely affecting the vibration of the diaphragm structure. May have an effect.

  Several methods for suppressing such penetration of cutting water or cutting waste into the sound holes have been proposed (see, for example, Patent Document 1 and Patent Document 2 below).

  Patent Document 1 discloses a structure in which an electret silicon oxide film formed on a silicon substrate is sandwiched between an insulating film and a metal film so that the silicon oxide film is not exposed. At this time, immediately before the metal film is formed by sputtering, the silicon oxide film is electretized using plasma in the vacuum chamber of the sputtering apparatus. With such a structure, moisture absorption to the MEMS microphone chip which is a MEMS semiconductor element is suppressed.

  In Patent Document 2, an acoustic hole is formed on the metal case or the substrate side, the substrate on which the connection pattern for joining the metal case, the metal case, the MEMS microphone chip mounted on the substrate, and the special case is provided. A silicon condenser microphone formed by an application specific integrated circuit (ASIC) chip and an adhesive that joins a metal case and a substrate is disclosed. Thus, by covering the MEMS microphone chip, which is a MEMS semiconductor element, with the metal case, the penetration of cutting water or cutting waste into the sound hole is suppressed.

JP 2005-183437 A JP 2007-82233 A

  However, in the MEMS microphone structure disclosed in Patent Document 1, measures that affect characteristics such as humidity only refer to measures in the semiconductor element, and suppress the intrusion of cutting water or cutting waste. Is insufficient.

  Further, in the MEMS microphone structure disclosed in Patent Document 2, when a plurality of semiconductor devices are divided (divided into pieces) by a dicing method, cutting water for removing crushed debris and suppressing frictional heat is a sound hole. The diaphragm structure and beam structure of the MEMS microphone semiconductor element may be destroyed.

  Similarly, in the processing method in which cutting is performed with a mold, cutting waste generated therein enters the sound hole, which may adversely affect the vibration of the diaphragm structure and affect sound quality.

  Accordingly, the present invention solves the above-described problem, and provides a MEMS microphone semiconductor device and a method for manufacturing the same that can suppress the intrusion of cutting water and cutting debris during processing for singulation and improve reliability. The purpose is to do.

  In order to solve the above problems, a MEMS microphone semiconductor device according to the present invention is a MEMS microphone semiconductor device, which includes a substrate, one or more semiconductor elements mounted on a first main surface of the substrate, and the substrate. A case fixed to the first main surface and covering the one or more semiconductor elements, a through hole formed in the substrate or the case and serving as a sound hole, and opposite to the first main surface of the substrate A plurality of connection electrodes formed on the second main surface, which is a surface of the through hole, and the through hole is provided with an intrusion suppression shape capable of suppressing intrusion of cutting water during dicing.

  With this configuration, it is possible to realize a MEMS microphone semiconductor device that can suppress the intrusion of cutting water and cutting waste during the process of singulation and improve the reliability.

  Here, the through hole may be provided with one or more constricted shapes in which the diameter of the through hole gradually narrows toward the center of the thickness of the substrate or the case. A taper shape in which the diameter of the through hole gradually narrows toward the first main surface or the second main surface of the substrate may be provided. Further, the through hole may have a shape with a stepped cross section, and the through hole may have a shape having two or more bent portions. The through hole may have a shape having an oblique structure inclined at a predetermined angle from a direction perpendicular to the first main surface of the substrate.

  As described above, the MEMS microphone semiconductor device enters, for example, one or more constricted shapes, tapered shapes, stepped shapes, shapes having two or more bent portions, or oblique shapes with respect to the through holes provided in the substrate or case. A deterrent shape is applied. As a result, the through-hole wall distance becomes longer than the cutting water or cutting dust intrusion path when the cutting water or cutting chip intrusion path when the MEMS microphone semiconductor device is separated into pieces does not have the above-described intrusion suppression shape. It is possible to prevent the cutting water and the cutting waste from entering the through hole.

  The through-hole may further be provided with a porous film having a porous hole with a diameter of 1 to 100 μm. The porous film is made of alumina ceramic, stainless steel, porous silicon, organic polymer porous material, resin porous material. You may consist of either.

  With this configuration, a porous protective film that allows a propagating substance such as air to permeate through a through-hole installed in the substrate or cap and prevents entry of cutting water or cutting waste when the MEMS microphone semiconductor device is separated into pieces. By providing, the diaphragm structure is protected. Thereby, a highly reliable MEMS microphone semiconductor device can be realized.

  In order to solve the above problems, a MEMS microphone semiconductor device according to the present invention is fixed to a main surface of the substrate, one or more semiconductor elements mounted on the first main surface of the substrate, and the substrate. A case that covers the one or more semiconductor elements; a through hole that is formed in the substrate and serves as a sound hole; and a second main surface that is a surface opposite to the first main surface of the substrate. A plurality of connection electrodes; and a resist film applied to a region other than the through hole and the contact electrode on the second main surface of the substrate, wherein the resist film has a height of 0 to 50 μm from a height of the connection electrode. It is applied low. The resist film may be formed around the through hole in the second main surface of the substrate.

  As described above, the resist is provided on the substrate surface so that the step between the plurality of connection electrodes on the mounting surface and the substrate surface on the mounting surface side is within 0 to 50 μm, or the resist is provided only around the through hole. This makes it possible to improve the adhesion between the dicing tape and the MEMS microphone semiconductor device. Accordingly, it is possible to suppress the cutting water and the cutting waste from entering the through hole during the division, so that a highly reliable MEMS microphone semiconductor device can be realized.

  In addition, the resist film may be further provided with an uneven structure on the surface opposite to the surface in contact with the substrate.

  As described above, by providing the concavo-convex structure in the resist, the penetration path to the through hole in the cutting water or cutting waste during dicing becomes longer, so that it is possible to prevent the cutting water and cutting waste from entering the through hole. it can. Therefore, a high-quality MEMS microphone semiconductor device can be realized.

  ADVANTAGE OF THE INVENTION According to this invention, the penetration of the cutting water at the time of the process which divides into pieces and cutting | disconnection waste can be suppressed, and the semiconductor device which improves reliability, and its manufacturing method are realizable.

It is sectional drawing of the MEMS microphone semiconductor device in Embodiment 1 of this invention. It is a figure for demonstrating the manufacturing method of the MEMS microphone semiconductor device in Embodiment 1 of this invention. It is a figure for demonstrating the manufacturing method of the MEMS microphone semiconductor device in Embodiment 1 of this invention. It is sectional drawing of the MEMS microphone semiconductor device of another aspect in Embodiment 1 of this invention. It is a figure for demonstrating the manufacturing method of the MEMS microphone semiconductor device of another aspect in Embodiment 1 of this invention. It is a figure for demonstrating the manufacturing method of the MEMS microphone semiconductor device of another aspect in Embodiment 1 of this invention. It is sectional drawing of the MEMS microphone semiconductor device of the modification 1 in Embodiment 1 of this invention. It is sectional drawing of the MEMS microphone semiconductor device of another aspect of the modification 1 in Embodiment 1 of this invention. It is sectional drawing of the MEMS microphone semiconductor device of the modification 2 in Embodiment 1 of this invention. It is sectional drawing of the MEMS microphone semiconductor device of another aspect of the modification 2 in Embodiment 1 of this invention. It is sectional drawing of the MEMS microphone semiconductor device of the modification 3 in Embodiment 1 of this invention. It is sectional drawing of the MEMS microphone semiconductor device of another aspect of the modification 3 in Embodiment 1 of this invention. It is sectional drawing of the MEMS microphone semiconductor device of the modification 4 in Embodiment 1 of this invention. It is sectional drawing of the MEMS microphone semiconductor device of another aspect of the modification 4 in Embodiment 1 of this invention. It is sectional drawing of the MEMS microphone semiconductor device of the modification 5 in Embodiment 1 of this invention. It is sectional drawing of the MEMS microphone semiconductor device of another aspect of the modification 5 in Embodiment 1 of this invention. It is sectional drawing of the MEMS microphone semiconductor device in Embodiment 2 of this invention. It is sectional drawing of the MEMS microphone semiconductor device of another aspect in Embodiment 2 of this invention. It is sectional drawing of the MEMS microphone semiconductor device in Embodiment 3 of this invention. It is sectional drawing of the MEMS microphone semiconductor device in Embodiment 3 of this invention. It is sectional drawing of the MEMS microphone semiconductor device of the modification 1 in Embodiment 3 of this invention. It is sectional drawing of the MEMS microphone semiconductor device of the modification 1 in Embodiment 3 of this invention. It is sectional drawing of the MEMS microphone semiconductor device in Embodiment 4 of this invention. It is sectional drawing of the MEMS microphone semiconductor device in Embodiment 4 of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings concerning the embodiment of the present invention, the ridge line is not described.

(Embodiment 1)
FIG. 1 is a cross-sectional view of the MEMS microphone semiconductor device according to the first embodiment of the present invention. As shown in FIG. 1, the MEMS microphone semiconductor device 100 includes a cap 1, a semiconductor element 2, a semiconductor element 4, an adhesive 5, a substrate 6, and an electrode 7. FIG. 1 shows a state in which the MEMS microphone semiconductor device 100 before being singulated is fixed by a dicing tape 9.

  The cap 1 covers the semiconductor element 2 and the semiconductor element 4 fixed to the substrate 6, and is fixed to the substrate 6 with an adhesive 5. The cap 1 may be made of any material having good heat resistance. For example, it may be made of a metal such as Cu, Al, or Mg, or an alloy thereof. Further, it may be made of non-metal such as plastic or ceramic. Thus, the material of the cap 1 is not particularly limited, but if it is a non-metallic material, it is desirable that the surface is plated with Sn or Ni.

  The semiconductor element 2 is a MEMS microphone semiconductor element having a diaphragm structure 3 or a beam structure such as a sensor device having a vibrating electrode, and is fixed to the substrate 6. Further, the semiconductor element 2 is electrically connected to the substrate 6 or the semiconductor element 4 by the wire portion 10.

  The semiconductor element 4 is, for example, a CMOS semiconductor element, is fixed to the substrate 6, and is electrically connected to the substrate 6 or the semiconductor element 2 by the wire portion 10. The semiconductor element 4 is a CMOS semiconductor element in which, for example, an analog IC, a logic IC, a memory IC or the like is used, but is not particularly limited thereto.

  The adhesive 5 is an adhesive that joins the cap 1 and the substrate 6 and includes, for example, any one of conductive epoxy, non-conductive epoxy, silver paste, silicon, urethane, acrylic, and solder paste.

  The substrate 6 is made of a glass cloth laminated epoxy substrate (glass epoxy substrate), a glass cloth laminated polyimide substrate, an aramid nonwoven fabric substrate, or the like. In the substrate 6, the semiconductor element 2 and the semiconductor element 4 are fixed to the first main surface 16, and the cap 1 is bonded by the adhesive 5 so as to cover the fixed semiconductor element 2 and the semiconductor element 4. Has been. As described above, the substrate 6 is electrically connected to the fixed semiconductor element 2, the semiconductor element 4, and the wire portion 10.

  Further, the substrate 6 is provided with a through hole 8 serving as a sound hole, and the electrode 7 is formed on a surface opposite to the main surface.

  The electrode 7 is an electrode made of Cu, for example, and is an electrode for electrical connection to the mother substrate. The electrode 7 is formed on a surface (second main surface 17) opposite to the first main surface 16 (surface on which the semiconductor element 2 and the semiconductor element 4 are fixed). Further, the surface treatment of the electrode 7 is preferably water-soluble heat-resistant preflux or Au / Ni plating.

  The through hole 8 is provided in the substrate 6 as a sound hole. The through hole 8 provided in the substrate 6 is provided with an intrusion prevention shape that does not inhibit air vibration such as sound but can inhibit the ingress of cutting water during dicing.

  As shown in FIG. 1, the through hole 8 is provided with an intrusion suppression shape having one or more constricted portions, for example. Specifically, the through hole 8 has a diameter A of the diaphragm structure 3, a diameter of the through hole 8 on the first main surface 16 side of the substrate 6, a b in the through hole 8, and a second diameter of the substrate 6. When the diameter of the through hole 8 on the main surface 17 side is c, an intrusion prevention shape having a constricted portion in which b is minimum as compared with a and c, that is, the diameter of the through hole 8 gradually narrows toward the center is provided. ing. By providing the penetration preventing shape having the constricted portion in the through hole 8, the wall distance of the through hole 8 is increased as compared with the case where the constricted portion is not provided. Thereby, the infiltration path of the cutting water at the time of dicing becomes long, and it is possible to suppress the intrusion of the cutting water into the through hole 8.

  The through hole diameter a on the first main surface 16 side, the through hole diameter c on the second main surface 17 side, and the diameter A of the diaphragm structure 3 may be the same, that is, A = a = c. However, the present invention is not limited thereto, and A = c> a, A = a> c, or A> a = c may be used. In this case, it is more effective for suppressing the entry of cutting waste into the diaphragm structure 3.

  The dicing tape 9 is a dicing tape that is used when a plurality of MEMS microphone semiconductor devices 100 are simultaneously formed and then divided (divided into pieces). For example, a pressure sensitive tape or a UV tape is used as the dicing tape 9, but the dicing tape 9 is not particularly limited. Moreover, in the dicing tape 9, the paste material thickness is desirably 1 to 50 μm, and the substrate thickness is desirably 50 to 200 μm.

  The wire part 10 electrically connects the semiconductor element 2 and the semiconductor element 4, the semiconductor element 2 and the substrate 6, and the semiconductor element 4 and the substrate 6.

The MEMS microphone semiconductor device 100 is configured as described above.
Next, the manufacturing method of the MEMS microphone semiconductor device 100 provided with the board | substrate 6 which has the through-hole 8 is demonstrated.

  2 and 3 are diagrams for explaining a method of manufacturing the MEMS microphone semiconductor device according to the first embodiment.

  First, the electrode 7 is provided on the second main surface 17 of the substrate 6 having the through-hole 8 (FIG. 2A), and the semiconductor element 2 and the semiconductor element 4 having the diaphragm structure 3 on the first main surface 18 of the substrate 6; Is mounted (FIG. 2B). Next, the wire part 10 for electrically connecting with the board | substrate 6 is formed in the semiconductor element 2 and the semiconductor element 4, the semiconductor element 2 and the board | substrate 6, and the semiconductor element 4 and the board | substrate 6 (FIG.2 (c)). . After forming the wire part 10, the cap 5 is joined to the board | substrate 6 using the adhesive agent 5 (FIG.2 (d)) (FIG.3 (e)). Next, in order to fix the plurality of MEMS microphone semiconductor devices 100, the substrate 6 is fixed with the dicing tape 9 (FIG. 3F), and the plurality of MEMS microphone semiconductor devices 100 are separated into pieces with the dicing blade 14 (FIG. 3). (G)). Then, the dicing tape 9 is peeled off (FIG. 3 (h)). In this way, the MEMS microphone semiconductor device 100 is manufactured.

  Although not shown, the through hole 8 is provided with an intrusion deterrent shape that deters the ingress of cutting water during dicing until it is separated into individual pieces.

  Moreover, although the above demonstrated the case where the through-hole 8 which is a sound hole was provided in the board | substrate 6, it is not restricted to it. The same applies to the case where the through hole 81 that is a sound hole is provided in the cap 1. This will be described below.

  FIG. 4 is a cross-sectional view of the MEMS microphone semiconductor device according to another aspect of the first embodiment of the present invention. Elements similar to those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.

  The MEMS microphone semiconductor device 101 shown in FIG. 4 differs from the MEMS microphone semiconductor device 100 shown in FIG. 1 in that a through hole 81 that is a sound hole is provided in the cap 1 instead of the substrate 6. FIG. 4 shows a state in which the cap 1 of the MEMS microphone semiconductor device 101 before being singulated is fixed by a dicing tape 9.

  The through hole 81 is provided in the cap 1 as a sound hole. The through-hole 8 provided in the cap 1 is provided with an intrusion prevention shape that does not inhibit air vibration such as sound but inhibits ingress of cutting water during dicing.

  As shown in FIG. 4, the through-hole 81 is provided with an intrusion prevention shape having one or more constricted portions, for example. Specifically, the through hole 81 provided in the cap 1 has a d through hole diameter on the first main surface 18 side of the cap 1 and a through hole diameter on the second main surface 19 side of the cap 1 d and An intrusion suppression shape having a constricted portion in which b is minimum as compared with e, that is, the diameter of the through hole 81 gradually narrows toward the vicinity of the center of the cap 1 is provided. By providing the penetration preventing shape having the constricted portion in the through hole 81, the wall surface distance of the through hole 81 is increased as compared with the case where the constricted portion is not provided. Thereby, the penetration path of the cutting water at the time of dicing becomes long, and it can suppress that cutting water penetrate | invades in a through-hole.

  The through hole diameter d on the first main surface 18 side of the cap 1, the through hole diameter e on the second main surface 19 side of the cap 1 and the diameter A of the diaphragm structure 3 are the same, that is, A = d = e. May be. However, the present invention is not limited to this, and A = d> e, A = e> d, or A> d = e. In this case, it is more effective for suppressing the entry of cutting waste into the diaphragm structure 3.

The MEMS microphone semiconductor device 101 is configured as described above.
Next, a method for manufacturing the MEMS microphone semiconductor device 101 including the cap 1 having the through hole 81 will be described.

  5 and 6 are diagrams for illustrating a method of manufacturing the MEMS microphone semiconductor device according to another aspect of the first embodiment.

  First, the electrode 7 is provided on the second main surface 17 of the substrate 6 (FIG. 5A), and the semiconductor element 2 and the semiconductor element 4 having the diaphragm structure 3 are mounted on the first main surface 18 of the substrate 6 (FIG. 5). 5 (b)). Next, the wire part 10 for electrically connecting with the board | substrate 6 is formed in the semiconductor element 2 and the semiconductor element 4, the semiconductor element 2 and the board | substrate 6, and the semiconductor element 4 and the board | substrate 6 (FIG.5 (c)). . After forming the wire portion 10, the adhesive 1 is used (FIG. 5D), and the cap 1 having the through hole 81 is joined to the substrate 6 (FIG. 6E). Next, in order to fix the plurality of MEMS microphone semiconductor devices 101, the cap 1 side is fixed with the dicing tape 9 (FIG. 6F), and the plurality of MEMS microphone semiconductor devices 101 are separated into pieces by the dicing blade 14 (FIG. 6). 6 (g)). Then, the dicing tape 9 is peeled off (FIG. 6 (h)). In this way, the MEMS microphone semiconductor device 101 is manufactured.

  Although not shown, the through hole 81 is provided with an intrusion suppression shape that suppresses intrusion of the cutting water during dicing before being divided into individual pieces.

  As described above, according to the first embodiment, it is possible to realize the MEMS microphone semiconductor device and the manufacturing method thereof that can suppress the intrusion of the cutting water and the cutting waste during the process of singulation and improve the reliability. Specifically, an intrusion suppression shape having a constricted portion is applied to the through hole 8 or the through hole 81 which is a sound hole provided in the substrate 6 or the cap 1 of the MEMS microphone semiconductor device 100. As a result, the through hole wall surface distance, that is, the intrusion path of cutting water or cutting waste, becomes longer than when no intrusion prevention shape is applied, and the intrusion of cutting water or cutting waste during dicing into the through hole 8 can be suppressed. Therefore, the diaphragm structure 3 in the MEMS microphone semiconductor device 100 can be protected.

  In the first embodiment, the example in which the constricted portion is provided as the invasion suppression shape in the through hole formed as the sound hole has been described, but the present invention is not limited thereto. Hereinafter, as modifications 1 to 5, other examples of the intrusion prevention shape will be described.

(Modification 1)
FIG. 7 is a cross-sectional view of the MEMS microphone semiconductor device of Modification 1 according to Embodiment 1 of the present invention. Elements similar to those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.

  The MEMS microphone semiconductor device 102 shown in FIG. 7 is different from the MEMS microphone semiconductor device 100 shown in FIG. 1 in the shape of intrusion suppression applied to the through hole 82 provided in the substrate 6.

  The through-hole 82 is provided in the substrate 6 as a sound hole, and is provided with an intrusion prevention shape having a tapered shape in which the diameter of the through-hole 82 gradually decreases toward the second main surface 17 of the substrate 6. Yes. By providing the through hole 82 with an intrusion suppression shape having a tapered shape as shown in FIG. 7, the wall surface distance of the through hole 82 is increased as compared with the case where the tapered shape is not provided. Thereby, the infiltration path of the cutting water during dicing becomes long, and it is possible to suppress the intrusion of the cutting water into the through hole 82.

  The through hole 82 is preferably provided with an intrusion suppression shape having a tapered shape in which the through hole diameter a on the first main surface 16 side and the diameter A of the diaphragm structure 3 are A> a. . This is because it is more effective against the penetration of cutting waste into the diaphragm structure 3.

  Further, the through hole 82 to which the above-described intrusion prevention shape is applied is not limited to the case where the substrate 6 is provided. The cap 1 may be provided as the through hole 83.

  FIG. 8 is a cross-sectional view of a MEMS microphone semiconductor device according to another aspect of Modification 1 of Embodiment 1 of the present invention. In addition, the same code | symbol is attached | subjected to the element similar to FIG. 7, and detailed description is abbreviate | omitted.

  The MEMS microphone semiconductor device 102 shown in FIG. 7 differs from the MEMS microphone semiconductor device 102 shown in FIG. 1 in that a through hole 83 that is a sound hole is provided in the cap 1 instead of the substrate 6.

  The through-hole 83 is provided in the cap 1 as a sound hole, and is provided with an intrusion suppression shape having a tapered shape in which the diameter of the through-hole 83 gradually decreases toward the first main surface 18 of the cap 1. Yes. By providing the penetration hole 83 with an intrusion suppression shape having a tapered shape like the MEMS microphone semiconductor device 103 of FIG. 8, the wall distance of the through hole 83 is increased as compared with the case where the tapered shape is not provided. Thereby, the infiltration path of the cutting water at the time of dicing becomes long, and the intrusion of the cutting water into the through hole 83 can be suppressed.

  The through hole 83 has an intrusion prevention shape having a tapered shape in which the diameter A of the diaphragm structure 3 is larger than the through hole diameter e on the second main surface 19 side of the cap 1, that is, A> e. Preferably it is done. This is because it is more effective against the penetration of cutting waste into the diaphragm structure 3.

(Modification 2)
FIG. 9 is a cross-sectional view of a MEMS microphone semiconductor device according to Modification 2 of Embodiment 1 of the present invention. In addition, the same code | symbol is attached | subjected to the element similar to FIG. 7, and detailed description is abbreviate | omitted.

  The MEMS microphone semiconductor device 104 shown in FIG. 9 is different from the MEMS microphone semiconductor device 102 shown in FIG. 7 in the shape of intrusion suppression applied to the through hole 84 provided in the substrate 6.

  The through hole 84 is provided in the substrate 6 as a sound hole, and is provided with an intrusion suppression shape having a tapered shape in which the diameter of the through hole 84 gradually decreases toward the first main surface 16 of the substrate 6. Yes. As shown in FIG. 9, when the penetration preventing shape having a tapered shape is applied to the through hole 84, the wall surface distance of the through hole 84 is increased as compared with the case where the tapered shape is not provided. Thereby, the infiltration path of the cutting water at the time of dicing becomes long, and it is possible to suppress the intrusion of the cutting water into the through hole 84.

  The through hole 84 is preferably provided with an intrusion prevention shape having a tapered shape in which the through hole diameter c on the second main surface 17 side and the diameter A of the diaphragm structure 3 are A> c. . This is because it is more effective against the penetration of cutting waste into the diaphragm structure 3.

  Further, the through hole 84 to which the above-described intrusion prevention shape is applied is not limited to the case where the substrate 6 is provided. The cap 1 may be provided as the through hole 85.

  FIG. 10 is a cross-sectional view of a MEMS microphone semiconductor device according to another aspect of Modification 2 of Embodiment 1 of the present invention. In addition, the same code | symbol is attached | subjected to the element similar to FIG. 9, and detailed description is abbreviate | omitted.

  The MEMS microphone semiconductor device 105 shown in FIG. 10 is different from the MEMS microphone semiconductor device 104 shown in FIG. 9 in that a through hole 85 that is a sound hole is provided in the cap 1 instead of the substrate 6.

  The through hole 85 is provided in the cap 1 as a sound hole, and is provided with an intrusion prevention shape having a tapered shape in which the diameter of the through hole 85 gradually decreases toward the second main surface 19 of the cap 1. Yes. By providing the through hole 83 with an intrusion suppression shape having a tapered shape as shown in FIG. 10, the wall surface distance of the through hole 85 is increased as compared with the case where the tapered shape is not provided. Thereby, the infiltration path of the cutting water at the time of dicing becomes long, and it is possible to prevent the cutting water from entering the through hole 85.

  The through hole 85 has an intrusion prevention shape having a taper shape in which the diameter A of the diaphragm structure 3 is larger than the through hole diameter d on the first main surface 18 side of the cap 1, that is, A> d. It is preferred that This is because it is more effective against the penetration of cutting waste into the diaphragm structure 3.

(Modification 3)
FIG. 11 is a cross-sectional view of the MEMS microphone semiconductor device of Modification 3 according to Embodiment 1 of the present invention. Elements similar to those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.

  The MEMS microphone semiconductor device 106 shown in FIG. 11 is different from the MEMS microphone semiconductor device 100 shown in FIG. 1 in the shape of intrusion prevention applied to the through-hole 86 provided in the substrate 6.

  The through hole 86 is provided in the substrate 6 as a sound hole, and is provided with an intrusion suppression shape having an oblique shape inclined at a certain angle from the direction perpendicular to the first main surface 16 of the substrate 6. As shown in FIG. 11, when the penetration preventing shape having an oblique shape is applied to the through hole 86, the wall surface distance of the through hole 86 is increased as compared with the case where the oblique shape is not provided. Thereby, the infiltration path of the cutting water during dicing becomes long, and the intrusion of the cutting water into the through hole 86 can be suppressed.

  The through hole 86 includes a through hole diameter a on the first main surface 16 side, a through hole diameter c on the second main surface 17 side, and a diameter A of the diaphragm structure 3 even if A = a = c. Good. However, the present invention is not limited thereto, and the through hole diameter a on the first main surface 16 side and the through hole diameter c on the second main surface 17 side are smaller than the diameter A of the diaphragm structure 3, that is, A> a = c. Also good. In that case, it is more effective against the penetration of the cutting waste into the diaphragm structure 3.

  Further, the through hole 86 to which the above-described intrusion prevention shape is applied is not limited to the case where the substrate 6 is provided. The cap 1 may be provided as the through hole 87.

  FIG. 12 is a cross-sectional view of a MEMS microphone semiconductor device according to another aspect of Modification 3 of Embodiment 1 of the present invention. In addition, the same code | symbol is attached | subjected to the element similar to FIG. 11, and detailed description is abbreviate | omitted.

  The MEMS microphone semiconductor device 107 shown in FIG. 12 is different from the MEMS microphone semiconductor device 106 shown in FIG. 11 in that a through hole 87 that is a sound hole is provided in the cap 1 instead of the substrate 6.

  The through-hole 87 is provided in the cap 1 as a sound hole, and is provided with an intrusion suppression shape having an oblique shape inclined at a certain angle from the direction perpendicular to the first main surface 18 of the cap 1. By providing the through hole 87 with an intrusion suppression shape having an oblique shape as shown in FIG. 12, the wall distance of the through hole 87 is increased as compared with the case without the oblique shape. Thereby, the infiltration path of the cutting water at the time of dicing becomes long, and it is possible to suppress the intrusion of the cutting water into the through hole 87.

  The through hole 87 includes a through hole diameter d on the first main surface 18 side of the cap 1, a through hole diameter e on the second main surface 19 of the cap 1, and a diameter A of the diaphragm structure 3, A = d = e may also be used. However, the present invention is not limited thereto, and the through hole diameter d on the first main surface 18 side of the cap 1 and the through hole diameter e on the second main surface 19 side of the cap 1 are smaller than the diameter A of the diaphragm structure 3, that is, A> d = e may be sufficient. In that case, it is more effective against the penetration of the cutting waste into the diaphragm structure 3.

(Modification 4)
FIG. 13 is a cross-sectional view of a MEMS microphone semiconductor device according to Modification 4 of Embodiment 1 of the present invention. Elements similar to those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.

  The MEMS microphone semiconductor device 108 shown in FIG. 13 is different from the MEMS microphone semiconductor device 100 shown in FIG. 1 in the shape of intrusion suppression applied to the through hole 88 provided in the substrate 6.

  The through-hole 88 is provided in the substrate 6 as a sound hole, and an intrusion suppression shape having a step shape is provided on both side surfaces of the through-hole 88. By providing the through hole 88 with an intrusion suppression shape having a staircase shape as shown in FIG. 13, the wall surface distance of the through hole 88 is increased as compared with the case without the staircase shape. Thereby, the penetration path of the cutting water at the time of dicing becomes long, and it can suppress that cutting water penetrate | invades in a through-hole.

  In the through hole 88, the through hole diameter a on the first main surface 16 side, the through hole diameter c on the second main surface 17 side, and the diameter A of the diaphragm structure 3 may be A = a = c. However, the present invention is not limited to this, and by reducing either the through-hole diameter a on the first main surface 16 side and the through-hole diameter c on the second main surface 17 side from the diameter A of the diaphragm structure 3, or both, It is also possible to suppress the penetration of cutting waste. Further, the diameter b in the through hole 88 may have a diameter different from a and c. In that case, it is possible to provide a constricted portion or a tapered shape in the staircase shape, which is more effective for the invasion of cutting waste into the diaphragm structure 3.

  In addition, the through-hole 88 to which the above-described intrusion prevention shape is applied is not limited to the case where the substrate 6 is provided. The cap 1 may be provided as the through hole 89.

  FIG. 14 is a cross-sectional view of a MEMS microphone semiconductor device according to another aspect of Modification 4 of Embodiment 1 of the present invention. Elements similar to those in FIG. 13 are denoted by the same reference numerals, and detailed description thereof is omitted.

  The MEMS microphone semiconductor device 109 shown in FIG. 14 is different from the MEMS microphone semiconductor device 108 shown in FIG. 11 in that a through hole 89 that is a sound hole is provided in the cap 1 instead of the substrate 6.

  The through-hole 89 is provided in the cap 1 as a sound hole, and an intrusion suppression shape having a step shape is provided on both side surfaces of the through-hole 89. When the penetration preventing shape having a stepped shape as shown in FIG. 14 is applied to the through-hole 89, the wall surface distance of the through-hole 89 is increased as compared with the case without the stepped shape. Thereby, the infiltration path of the cutting water at the time of dicing becomes long, and it is possible to suppress the intrusion of the cutting water into the through hole 89.

  In the through hole 89, the through hole diameter d on the first main surface 18 side of the cap 1, the through hole diameter e on the second main surface 19 side of the cap 1, and the diameter A of the diaphragm structure 3 are A = d = e may also be used. However, the present invention is not limited thereto, and either the through-hole diameter d on the first main surface 18 side of the cap 1 and the through-hole diameter e on the second main surface 19 side of the cap 1 with respect to the diameter A of the diaphragm structure 3 or both. By making it small, it is also possible to suppress the penetration of cutting waste. Further, the diameter b in the through hole 89 may have a diameter different from d and e. In that case, it is possible to provide a constricted portion or a tapered shape in the staircase shape, which is more effective for the invasion of cutting waste into the diaphragm structure 3.

(Modification 5)
FIG. 15 is a cross-sectional view of a MEMS microphone semiconductor device according to Modification 5 of Embodiment 1 of the present invention. Elements similar to those in FIG. 14 are denoted by the same reference numerals, and detailed description thereof is omitted.

  The MEMS microphone semiconductor device 109 shown in FIG. 15 is different from the MEMS microphone semiconductor device 108 shown in FIG. 14 in the shape of intrusion prevention applied to the through hole 90 provided in the substrate 6.

  The through hole 90 is provided in the substrate 6 as a sound hole, and for example, an intrusion suppression shape having two or more bent portions having two U-shaped cross sections is applied. By providing the through-hole 90 with an intrusion prevention shape having a U-shape as shown in FIG. 15, the wall surface distance of the through-hole 90 is increased as compared with the case without the U-shape. Thereby, the infiltration path of the cutting water at the time of dicing becomes long, and it is possible to prevent the cutting water from entering the through hole 90.

  In the through hole 90, the through hole diameter a on the first main surface 16 side, the through hole diameter c on the second main surface 17 side, and the diameter A of the diaphragm structure 3 may be A = a = c. However, the present invention is not limited to this, and by reducing either the through-hole diameter a on the first main surface 16 side, the through-hole diameter c on the second main surface 17 side, or both from the diameter A of the diaphragm structure 3, cutting waste It is also possible to prevent the intrusion. Further, the diameter b in the through hole 90 may have a diameter different from a and c. In that case, it is possible to provide a constricted portion or a tapered shape in the U-shape, which is more effective for the penetration of cutting waste into the diaphragm structure 3.

  In addition, the through hole 90 to which the above-described intrusion prevention shape is applied is not limited to the case where the substrate 6 is provided. The cap 1 may be provided as the through hole 91.

  FIG. 16 is a cross-sectional view of a MEMS microphone semiconductor device according to another aspect of Modification 5 of Embodiment 1 of the present invention. Elements similar to those in FIG. 15 are denoted by the same reference numerals, and detailed description thereof is omitted.

  The MEMS microphone semiconductor device 111 shown in FIG. 16 differs from the MEMS microphone semiconductor device 110 shown in FIG. 15 in that a through hole 91 that is a sound hole is provided in the cap 1 instead of the substrate 6.

  The through hole 91 is provided in the cap 1 as a sound hole, and is provided with an intrusion suppression shape in which the cross-sectional shape of the through hole 91 is U-shaped. When the penetration preventing shape having a U-shape as shown in FIG. 16 is applied to the through-hole 91, the wall surface distance of the through-hole 91 is increased as compared with the case where the U-shape is not provided. Thereby, the infiltration path of the cutting water during dicing becomes long, and the intrusion of the cutting water into the through hole 91 can be suppressed.

  In the through hole 91, the through hole diameter d on the first main surface 18 side of the cap 1, the through hole diameter e on the second main surface 19 side of the cap 1, and the diameter A of the diaphragm structure 3 are A = d = e. It may be. However, the present invention is not limited thereto, and either the through-hole diameter d on the first main surface 18 side of the cap 1 and the through-hole diameter e on the second main surface 19 side of the cap 1 with respect to the diameter A of the diaphragm structure 3 or both. By making it small, it is also possible to suppress the penetration of cutting waste. Further, the diameter b in the through hole 91 may have a diameter different from d and e. In that case, it is possible to provide a constricted portion or a tapered shape in the U-shape, which is more effective for the penetration of cutting waste into the diaphragm structure 3.

  As described above, the penetration hole shape is applied to the through hole, which is a sound hole provided in the substrate or cap of the MEMS microphone semiconductor device, so that the penetration hole wall surface distance, that is, cutting water or It is possible to prevent the cutting water from entering the through hole 8 by dicing the cutting water or the cutting waste during the dicing. Therefore, the diaphragm structure in the MEMS microphone semiconductor device can be protected.

  As described above, according to the first embodiment, it is possible to realize the MEMS microphone semiconductor device and the manufacturing method thereof that can suppress the intrusion of the cutting water and the cutting waste during the process of singulation and improve the reliability.

(Embodiment 2)
In Embodiment 1, the example in which the intrusion prevention shape is provided in the through hole has been described, but the present invention is not limited thereto. Anything that does not suppress the vibration of air such as sound but can suppress the ingress of cutting water during dicing is acceptable. In the second embodiment, an example will be described.

  FIG. 17 is a cross-sectional view of the MEMS microphone semiconductor device according to the second embodiment of the present invention. Elements similar to those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.

  The MEMS microphone semiconductor device 200 shown in FIG. 17 is different from the MEMS microphone semiconductor device 100 shown in FIG. 1 in that the porous film 11 is provided in the through hole 8 that is a sound hole, instead of the intrusion suppressing shape.

  As shown in FIG. 17, the through-hole 8 is provided as a sound hole in the substrate 6, and a propagating substance such as air is allowed to pass through a part of the through-hole 8, but prevents cutting water from entering during dicing. Such a porous film 11 is provided.

  The porous film 11 has a large number of pores having a pore diameter of 1 to 100 μm, and the composition is made of alumina ceramic, stainless steel, porous silicon, an organic polymer porous material, or a resin porous material.

  As shown in FIG. 17, the through-hole 8 having the porous film 11 can prevent the cutting water from entering the through-hole 8 during dicing. Moreover, it is more effective against the penetration of cutting waste.

  Note that the through hole 8 to which the porous film is applied is not limited to being provided in the substrate 6. The cap 1 may be provided.

  FIG. 18 is a cross-sectional view of a MEMS microphone semiconductor device according to another aspect of the second embodiment of the present invention. Note that the same elements as those in FIG. 17 are denoted by the same reference numerals, and detailed description thereof is omitted.

  The MEMS microphone semiconductor device 201 shown in FIG. 18 differs from the MEMS microphone semiconductor device 200 shown in FIG. 17 in that a through hole 208 that is a sound hole is provided in the cap 1 instead of the substrate 6.

  The through-hole 208 is provided in the cap 1 as a sound hole, and a porous material that allows a propagating substance such as air to permeate a part of the through-hole 208 provided in the cap 1 but prevents the penetration of cutting water during dicing. A film 11 is provided.

  Since the through-hole 208 has the porous film 11 as shown in FIG. 18, it is possible to prevent the cutting water from entering the through-hole 208 during dicing. Furthermore, it is possible to prevent the penetration of cutting waste.

  As described above, by providing a porous film in a through hole that is a sound hole provided in a substrate or cap of a MEMS microphone semiconductor device, cutting water or cutting waste during dicing is prevented from entering the through hole 8. can do. Therefore, the diaphragm structure in the MEMS microphone semiconductor device can be protected.

  As described above, according to the second embodiment, it is possible to realize the MEMS microphone semiconductor device and the manufacturing method thereof that can suppress the intrusion of the cutting water and the cutting waste during the process of separating into individual pieces and improve the reliability.

(Embodiment 3)
In the third embodiment, another mode for suppressing the intrusion of cutting water and cutting waste during the process of separating into through holes that are sound holes provided in the substrate or cap of the MEMS microphone semiconductor device will be described. .

  19 and 20 are cross-sectional views of the MEMS microphone semiconductor device according to the third embodiment of the present invention. Elements similar to those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.

  A MEMS microphone semiconductor device 300 shown in FIG. 19 has the structure for suppressing the intrusion of cutting water at the time of dicing, instead of the MEMS microphone semiconductor device 100 shown in FIG. The configuration differs in that it is provided between 9 and the substrate 6.

  The resist film 312 is provided between the dicing tape 9 and the substrate 6 in order to suppress the entry of cutting water during dicing. The resist film 312 is formed thinner (lower) by t (for example, 0 to 50 μm) than the thickness (height) of the electrode 7 in the direction perpendicular to the first main surface 16 of the substrate 6. In other words, the resist film 312 is provided between the dicing tape 9 and the substrate 6 so that the electrode 7 has a convex amount t of 0 to 50 μm from the resist film 312.

  As shown in FIG. 19, the resist film 312 is provided on the second main surface 17 of the substrate 6 so that the electrode 7 has a convex amount t of 0 to 50 μm from the resist film 312, so that the paste material of the dicing tape 9 becomes the electrode 7 can buffer the convex amount t from the resist film 312. That is, the MEMS microphone semiconductor device 300 can seal the through-hole 8 by increasing the contact area between the substrate 6 and the dicing tape 9 via the resist film 312 and the electrode 7. Infiltration of water and cutting waste can be prevented.

  As shown in FIG. 20, the resist film 312 may have unevenness 313 of about 1 to 49 μm on the surface opposite to the substrate 6. In that case, since the cutting water intrusion route to the through hole 8 is further increased, it is possible to prevent the cutting water and cutting waste during dicing from entering the through hole 8.

  In addition, the resist film 312 may be included in the MEMS microphone semiconductor device 300 or may be left on the dicing tape 9 in the step of peeling from the dicing tape 9.

(Modification 1)
21 and 22 are cross-sectional views of the MEMS microphone semiconductor device of Modification 1 according to Embodiment 3 of the present invention. In addition, the same code | symbol is attached | subjected to the element similar to FIG. 19, and detailed description is abbreviate | omitted.

  A MEMS microphone semiconductor device 302 shown in FIG. 21 is different from the MEMS microphone semiconductor device 300 shown in FIG. 19 in the configuration of a resist film 314 provided to suppress intrusion of cutting water during dicing. That is, the resist film 314 differs in that it is formed not only on the entire second main surface side of the substrate 6 but particularly around the through-hole 8.

  The resist film 314 is provided around the through hole 8 so that the electrode 7 has a convex amount t of 0 to 50 μm from the resist film 314. In the drawing, the resist film 314 is provided between the dicing tape 9 and the substrate 6 and between the electrodes 7 on the second main surface 17 of the substrate 6 around the through hole 8 in the second main surface 17 of the substrate 6. It is formed so as to have a continuously connected pattern.

  As shown in FIG. 20, the resist film 312 in which the electrode 7 has a convex amount t of 0 to 50 μm from the resist film 314 is provided only around the through hole 8 as described above, so that the glue material of the dicing tape 9 is obtained. Can buffer the convex amount t of the electrode 7. That is, the MEMS microphone semiconductor device 300 can seal the through hole 8 by increasing the contact area between the substrate 6 and the dicing tape 9 around the through hole 8 via the resist film 314 and the electrode 7. Thereby, infiltration of the cutting water and the cutting waste at the time of dicing can be prevented.

  As shown in FIG. 22, the resist film 314 may have unevenness 313 of about 1 to 49 μm on the surface opposite to the substrate 6. In that case, since the cutting water intrusion route to the through hole 8 is further increased, it is possible to prevent the cutting water and cutting waste during dicing from entering the through hole 8.

  Further, the resist film 314 may be included in the MEMS microphone semiconductor device 302 or may be left on the dicing tape 9 in a process of peeling from the dicing tape 9.

  As described above, since the through-hole 8 is sealed during dicing by providing a resist film between the dicing tape 9 and the substrate 6 in order to suppress the intrusion of cutting water during dicing, cutting during dicing is performed. Water or cutting waste can be prevented from entering the through hole 8. Therefore, the diaphragm structure in the MEMS microphone semiconductor device can be protected.

  As described above, according to the third embodiment, it is possible to realize the MEMS microphone semiconductor device and the manufacturing method thereof that can suppress the intrusion of the cutting water and the cutting waste during the process of singulation and improve the reliability.

(Embodiment 4)
In the first to third embodiments, the cap 1 is described as an example to cover the semiconductor element 2 and the semiconductor element 4 fixed to the substrate of the MEMS microphone semiconductor device. However, the present invention is not limited to this. For example, instead of the cap 1, a rib and a plate cap may be used. Hereinafter, as the fourth embodiment, an example in which a rib and a plate cap are used will be described.

  23 and 24 are cross-sectional views of the MEMS microphone semiconductor device according to the fourth embodiment of the present invention. Elements similar to those in FIGS. 1 and 4 are denoted by the same reference numerals, and detailed description thereof is omitted.

  A MEMS microphone semiconductor device 400 shown in FIG. 23 differs from the MEMS microphone semiconductor device 100 shown in FIG. 1 in that a rib 451 and a plate cap 453 are fixed to a substrate 6 by an adhesive 5 instead of the cap 1. .

  The rib 451 and the plate cap 453 cover the semiconductor element 2 and the semiconductor element 4 fixed to the substrate 6, and are fixed to the substrate 6 by the adhesive 5.

  The rib 451 is disposed around the semiconductor element 2 and the semiconductor element 4 on the first main surface 16 of the substrate 6, and is fixed to the substrate 6 with the adhesive 5.

  The plate cap 453 is a flat plate. The plate cap 453 is installed on the rib 451 and fixed to the rib 451 by the adhesive 5 so as to cover the semiconductor element 2 and the semiconductor element 4 fixed to the substrate 6.

  The adhesive 5 is cured by heat (thermosetting) after the rib 451 and the plate cap 453 are installed. Thereby, the adhesive 5 fixes the substrate 6, the rib 451, the rib 451, and the plate cap 453.

  Further, the substrate 6 is provided with a through hole 8 serving as a sound hole, and the electrode 7 is formed on a surface opposite to the main surface.

  The through hole 8 is provided in the substrate 6 as a sound hole. The through hole 8 provided in the substrate 6 is provided with an intrusion prevention shape that does not inhibit air vibration such as sound but can inhibit the ingress of cutting water during dicing.

The MEMS microphone semiconductor device 400 is configured as described above.
As described above, according to the fourth embodiment, it is possible to realize the MEMS microphone semiconductor device and the manufacturing method thereof that can suppress the intrusion of the cutting water and the cutting waste during the process of separating into individual pieces and improve the reliability.

  In the above description, the example in which the intrusion prevention shape is provided in the through hole has been described. However, if the vibration of air such as sound is not suppressed but the intrusion of cutting water during dicing is suppressed, the intrusion prevention into the through hole is described. Needless to say, the present invention is not limited to the case where the shape is provided, and can be applied to any of the cases described in the first to fourth embodiments.

  Moreover, the through hole 8 which is a sound hole is not limited to being provided in the substrate 6. As shown in FIG. 24, a through hole 81 that is a sound hole may be provided in the plate cap 453.

  Although the MEMS microphone semiconductor device of the present invention has been described based on the embodiment, the present invention is not limited to this embodiment. Unless it deviates from the meaning of this invention, the form which carried out the various deformation | transformation which those skilled in the art can think to this embodiment, and the structure constructed | assembled combining the component in different embodiment is also contained in the scope of the present invention. .

  The present invention can be used for a semiconductor device and a manufacturing method thereof, and in particular, can be used for a semiconductor device formed using a MEMS (Micro Electro Mechanical Systems) technology such as a sensor device having a vibrating electrode and a manufacturing method thereof.

DESCRIPTION OF SYMBOLS 1 Cap 2 Semiconductor element 3 Diaphragm structure 4 Semiconductor element 5 Adhesive 6 Board | substrate 7 Electrode 8, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 208 Through-hole 9 Dicing tape 10 Wire Part 11 Porous film 14 Dicing blade 16, 18 First main surface 17, 19 Second main surface 100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111, 200, 201, 300 , 302, 400, 401 MEMS microphone semiconductor device 312, 314 Resist film 313 Concavity and convexity 451 Rib 453 Plate cap

Claims (14)

A MEMS (Micro Electro Mechanical System) microphone semiconductor device,
A substrate,
One or more semiconductor elements mounted on the first major surface of the substrate;
A case fixed to the first main surface of the substrate and covering the one or more semiconductor elements;
A through-hole formed in the substrate or the case and serving as a sound hole;
A plurality of connection electrodes formed on a second main surface that is a surface opposite to the first main surface of the substrate;
The MEMS microphone semiconductor device, wherein the through-hole is provided with an intrusion prevention shape that can inhibit intrusion of cutting water during dicing. The MEMS microphone semiconductor device according to claim 1, wherein the through-hole has one or more constricted shapes in which the diameter of the through-hole gradually decreases toward the center of the thickness of the substrate or the case. 2. The MEMS microphone semiconductor device according to claim 1, wherein the through hole has a tapered shape in which a diameter of the through hole gradually decreases toward the first main surface or the second main surface of the substrate. The MEMS microphone semiconductor device according to claim 1, wherein the through hole has a shape with a stepped cross section. The MEMS microphone semiconductor device according to claim 1, wherein the through hole has a shape having two or more bent portions. The MEMS microphone semiconductor device according to claim 1, wherein the through hole is provided with an oblique structure inclined at a predetermined angle from a direction perpendicular to the first main surface of the substrate. The MEMS microphone semiconductor device according to claim 1, wherein the through-hole is further provided with a porous film having a porous hole with a diameter of 1 to 100 μm. The MEMS microphone semiconductor device according to claim 7, wherein the porous film is made of any one of alumina ceramic, stainless steel, porous silicon, an organic polymer porous body, and a resin porous. A substrate,
One or more semiconductor elements mounted on the first major surface of the substrate;
A case fixed to a main surface of the substrate and covering the one or more semiconductor elements;
A through hole formed in the substrate and serving as a sound hole;
A plurality of connection electrodes formed on a second main surface which is a surface opposite to the first main surface of the substrate;
A resist film applied to a region other than the through hole and the contact electrode on the second main surface of the substrate;
The resist film is applied 0 to 50 μm lower than the height of the connection electrode. MEMS microphone semiconductor device. The MEMS microphone semiconductor device according to claim 9, wherein the resist film is formed around the through hole in the second main surface of the substrate. 10. The MEMS microphone semiconductor device according to claim 9, wherein the resist film is further provided with a concavo-convex structure having a concavo-convex structure on a surface opposite to a surface in contact with the substrate. A substrate,
One or more semiconductor elements mounted on the first major surface of the substrate;
A rib fixed around the semiconductor element on the first main surface of the substrate;
A plate cap that is a flat plate and is fixed to the rib so as to cover the semiconductor element;
A through-hole formed in the substrate or the plate cap and serving as a sound hole;
A plurality of connection electrodes formed on a second main surface that is a surface opposite to the first main surface of the substrate;
The MEMS microphone semiconductor device, wherein the through-hole is provided with an intrusion prevention shape that can inhibit intrusion of cutting water during dicing. The MEMS microphone semiconductor device according to claim 12, wherein the through hole has one or more constricted shapes in which the diameter of the through hole gradually decreases toward the center of the substrate or the plate cap. A method for manufacturing a MEMS microphone semiconductor device, comprising:
A first step of mounting one or more semiconductor elements on the first main surface of the substrate;
A second step of fixing a case covering the one or more semiconductor elements to the first main surface of the substrate;
A third step of forming a through hole serving as a sound hole in the substrate or the case;
Including a fourth step of forming a plurality of connection electrodes on a second main surface which is a surface opposite to the first main surface of the substrate;
In the third step, the through hole is provided with an intrusion inhibiting shape capable of inhibiting intrusion of cutting water during dicing.

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