JP2010223669A - Mask inspection device, organic EL device manufacturing device, mask inspection method, organic EL device manufacturing method - Google Patents

Abstract

A mask inspection apparatus capable of detecting a desired quality characteristic of a film-forming mask and efficiently inspecting the mask, an apparatus for manufacturing an organic EL device including the mask inspection method, a mask inspection method using the same, and To provide a method for manufacturing an organic EL device.
A mask inspection apparatus 150 according to this application example includes a light source 153 that emits light in a strip shape, and a light source so that the surface of a vapor deposition mask 50 as a deposition mask is scanned in a predetermined direction by the strip light. A transport mechanism 115 serving as a scanning mechanism for relatively moving 153 and the vapor deposition mask 50;
A light receiving unit 156 that receives light reflected from the surface of the vapor deposition mask 50 during scanning, and the light receiving unit 1
An image processing unit that synthesizes the 56 received light signals with the image.
[Selection] Figure 8

Description

The present invention relates to a mask inspection apparatus for a film-forming mask, an organic EL apparatus manufacturing apparatus, a mask inspection method, and an organic EL apparatus manufacturing method that are used when various functional layers are selectively formed on a substrate.

The film forming mask inspection apparatus includes an infrared light source that illuminates a vapor deposition mask disposed at a predetermined position on a support base, and reflected light from the vapor deposition mask that is illuminated by the infrared light source. An inspection apparatus for a vapor deposition mask including a detection unit that detects presence or absence is known (Patent Document 1).

In the embodiment of the inspection apparatus, the detection unit includes an imaging unit that images the vapor deposition mask illuminated by the infrared light source, and an image processing unit that performs predetermined image processing on the image of the vapor deposition mask captured by the imaging unit. It is composed of An imaging unit that selectively senses infrared rays is used, and the surface of the vapor deposition mask reflects infrared rays, whereas foreign matters absorb infrared rays and appear dark on images. The detection rate is improved.
Furthermore, as a method for further increasing the detection rate of foreign matter, there is a method of arranging a plurality of infrared light sources so that infrared rays are irradiated onto the surface of the vapor deposition mask from different directions, and reducing shadows due to irregularities on the vapor deposition mask surface. It is disclosed.

In addition, as an inspection method using the inspection apparatus, the illuminated vapor deposition mask is partially imaged in a predetermined repeating unit, and the presence / absence of a foreign object and its position are compared by comparing the images of the captured repeating unit. It is supposed to detect.

JP 2008-102003 A

However, in the inspection apparatus described above, the size of the foreign matter that can be detected depends on the resolution of the imaging unit. Therefore, when trying to detect a finer foreign matter, it is necessary to reduce the area of the imaging unit and perform imaging. is there. That is, the number of times to repeatedly image the deposition mask increases,
There is a problem that it takes a lot of time to inspect the foreign matter.
In addition to the adhesion of foreign matter, dimensional accuracy such as unevenness and deformation of the surface of the vapor deposition mask may affect the film formation, and there is a problem that quality related to dimensional accuracy must be ensured.

SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

Application Example 1 A mask inspection apparatus according to this application example is a mask inspection apparatus for a film-forming mask having an opening corresponding to a film-forming pattern, and includes a light source that emits light in a band shape and the band-shaped light. A scanning mechanism that relatively moves the light source and the film-forming mask so as to scan the surface of the film-forming mask in a predetermined direction, and light reflected from the surface of the film-forming mask as a result of the scanning A light receiving unit for receiving light and an image processing unit for combining a light reception signal of the light receiving unit with an image.

According to this configuration, since the light source that emits strip-shaped light is used as compared with the configuration in which the surface of the film-forming mask is scanned by irradiating spot-shaped light from the light source, for example, the surface of the film-forming mask is at least By scanning once, an image of the surface to be inspected can be obtained. Mask defects such as adhesion and deformation of foreign substances can be detected from the obtained image. That is, it is possible to provide a mask inspection apparatus capable of efficiently detecting a mask defect.

Application Example 2 In the mask inspection apparatus according to the application example described above, the image processing unit performs image processing to superimpose a design image of the deposition mask and an image synthesized based on the light reception signal. It is characterized by.
According to this configuration, in the image of the film formation mask synthesized by the light reception signal of the light receiving unit,
For example, it can be easily confirmed whether the opening matches the designed dimension or not. That is, it is possible to provide a mask inspection apparatus capable of detecting a mask defect related to the dimensional accuracy of the film forming mask.

Application Example 3 In the mask inspection apparatus according to the application example described above, the light source emits white light.
According to this configuration, since the light source emits white light, it is easier to identify mask defects such as foreign matter and dirt attached to the surface of the film formation mask as compared with the case of emitting colored monochromatic light.

Application Example 4 In the mask inspection apparatus according to the application example described above, the mask inspection apparatus includes an arrangement mechanism in which a transparent substrate is placed on the surface of the film formation mask, and the light source has a specific emission wavelength range toward the transparent substrate. The monochromatic light may be emitted, and the image processing unit may synthesize an interference fringe image of the monochromatic light generated between the transparent substrate and the film formation mask.
According to this configuration, the degree of mutual adhesion can be determined by superimposing the transparent substrate on the film formation mask and confirming the image of the interference fringes of monochromatic light generated between the transparent substrate and the film formation mask. That is, it is possible to detect a mask defect in which the film formation mask is locally deformed or warped as a whole from the state of interference fringes.

Application Example 5 In the mask inspection apparatus according to the application example described above, it is preferable that the light source switches between white light and monochromatic light having the specific emission wavelength range.
According to this configuration, it is possible to detect mask defects such as foreign matters and dirt by scanning with white light, and to detect mask defects such as deformation and warp by scanning with monochromatic light. That is, it is possible to provide a mask inspection apparatus capable of detecting more mask defect characteristics with one apparatus.

Application Example 6 In the mask inspection apparatus according to the application example described above, it is preferable that the mask inspection apparatus further includes a condensing unit that condenses the light reflected from the surface of the film formation mask along with the scanning with respect to the light receiving unit.
Needless to say, it is efficient that the length (width) of the strip-shaped light emitted from the light source is a length that allows the film-formation mask to be scanned once. According to this configuration, since the light reflected from the surface of the film forming mask by the light collecting unit is collected on the light receiving unit, it is not necessary to prepare a light receiving unit corresponding to the length of the band-shaped light. In other words, it is only necessary to provide a condensing unit according to the resolution of the light receiving unit, so that restrictions on device design such as selection and arrangement of the light receiving unit can be reduced.

[Application Example 7] The organic EL device manufacturing apparatus according to this application example forms the film on the film formation substrate by superimposing a film formation mask having an opening corresponding to the film formation region and the film formation substrate. An apparatus for manufacturing an organic EL device for forming a functional layer constituting an organic EL element in a region, having an evaporation source for evaporating a film forming material, wherein the film formation mask is disposed to face the evaporation source At least one first chamber in which film formation is performed while holding the stacked substrate to be deposited, a second chamber communicating with the first chamber, and the mask inspection apparatus according to the application example. 2
In the chamber, at least the light source, the scanning mechanism, and the light receiving unit of the mask inspection apparatus are provided.

According to this configuration, the film formation mask can be inspected in the second chamber without taking out the film formation mask out of the manufacturing apparatus.
An apparatus for manufacturing an organic EL device capable of manufacturing an L device can be provided.

Application Example 8 In the organic EL device manufacturing apparatus according to the application example described above, a plurality of the first chambers are connected to each other, and the second chamber includes the first chamber on the upstream side and the first chamber on the downstream side. It may be a transport path that communicates with the used film-forming mask and transports the used deposition mask from the downstream side to the upstream side.
According to this configuration, in a so-called in-line organic EL device manufacturing apparatus, a mask inspection can be efficiently performed even when a repetitive film formation mask is used.

Application Example 9 A mask inspection method according to this application example is a mask inspection method for a film formation mask having an opening corresponding to a film formation pattern, and the film formation mask is formed by strip-shaped light emitted from a light source. A scanning step of scanning the surface of the film in a predetermined direction, and a light reflected from the surface of the film forming mask in accordance with the scanning is received by a light receiving unit, and based on an image synthesized by a light reception signal of the light receiving unit And a detection step of detecting a mask defect.

According to this method, in the scanning process, the surface of the film formation mask is scanned by emitting a band-shaped light, so that the surface to be inspected is compared with the case where scanning is performed by irradiating, for example, spot-shaped light from a light source. The images can be easily obtained. In the detection process, it is possible to detect a mask defect such as adhesion or deformation of a foreign substance from the obtained image. That is, it is possible to provide a mask inspection method capable of efficiently detecting a mask defect.

Application Example 10 In the mask inspection method according to the application example described above, the detection step compares the design image of the film forming mask with an image synthesized based on the light reception signal, and determines the mask defect. It is characterized in that a dimensional defect is detected.
According to this method, it is possible to easily confirm whether the opening in the image of the film forming mask synthesized by the light receiving signal of the light receiving unit matches the design dimension or not. That is, it is possible to provide a mask inspection method capable of detecting a mask defect related to the dimensional accuracy of the film forming mask.

Application Example 11 In the mask inspection method according to the application example described above, the scanning step emits white light from the light source, and the detection step detects adhesion of foreign matters or dirt having a predetermined size or more as the mask defect. It is characterized by doing.
According to this method, since the light source emits white light, mask defects such as foreign matters and dirt attached to the surface of the film forming mask can be accurately identified as compared with the case of emitting colored monochromatic light. it can.

Application Example 12 In the mask inspection method according to the application example described above, the detection step may detect the foreign matter adhering to the opening of the film forming mask.
According to this method, since the light emitted from the light source is transmitted through the opening, the opening is dark in the image obtained from the light reception signal of the light receiving unit. Therefore, when a foreign substance is attached to the opening, the foreign substance can be detected with a higher contrast ratio than when the foreign substance is attached to the surface of the deposition mask. In other words, it is possible to accurately detect clogging due to foreign matter in the opening necessary for film formation as a film formation mask.

Application Example 13 In the mask inspection method according to the application example described above, the mask inspection method includes an arrangement process in which a transparent substrate is placed on the surface of the film formation mask, and the scanning process emits specific light from the light source toward the transparent substrate. Monochromatic light having a wavelength band is emitted, and the detection step is performed on an interference fringe image of the monochromatic light generated between the transparent substrate synthesized based on the light reception signal of the light receiving unit and the film formation mask. Based on this, a deformation defect as the mask defect is detected.
According to this method, the occurrence state of the interference fringes of the monochromatic light reflects the close contact state between the film formation mask and the transparent substrate, so that deformation defects in the film formation mask can be easily detected.

Application Example 14 In the mask inspection method according to the application example described above, the detection step detects a warp of the film forming mask from the density state of the interference fringes in a predetermined direction in the interference fringe image of the monochromatic light. It is good.
Since the deposition mask is used by being overlapped with the deposition target substrate, it is generally required that the surface on the side superimposed on the deposition target substrate is flat. On the other hand, for example, when film formation is performed, the film forming material itself may adhere to the film formation mask, and the weight of the film formation mask may increase and warp may occur. When warping occurs, there is a concern about the influence on film formation. According to this method, the warp of the film forming mask can be detected with high accuracy.

[Application Example 15] Another mask inspection method of this application example is a mask inspection method for a film-forming mask having an opening corresponding to a film-forming pattern, and the above-described mask inspection method is performed using a strip-shaped white light emitted from a light source. A first scanning step of scanning the surface of the film mask in a predetermined direction; and the white light reflected from the surface of the film forming mask in accordance with the first scanning step is received by a light receiving unit; A first detection step for detecting the adhesion of foreign substances having a size equal to or greater than a predetermined size based on the image synthesized by the received light signal, and an arrangement step for placing a transparent substrate on the surface of the film formation mask, Along with the second scanning step, a monochromatic light having a specific emission wavelength range is emitted from the light source toward the transparent substrate, and the surface of the film forming mask is scanned in a predetermined direction. From the surface of the film forming mask Based on an image of the interference fringes of the monochromatic light generated between the transparent substrate and the film-forming mask synthesized based on the received light signal of the light receiving unit. And a second detection step of detecting a deformation defect of the film forming mask.

According to this method, in the first detection step, at least foreign matter or dirt can be detected on the surface of the film formation mask, and in the second detection step, a deformation defect of the film formation mask can be detected.

Application Example 16 In the manufacturing method of the organic EL device according to this application example, the film formation of the film formation substrate is performed by superimposing a film formation mask having an opening corresponding to the film formation region and the film formation substrate. A method of manufacturing an organic EL device having a film forming process for forming a functional layer constituting an organic EL element in a region, using the mask inspection method of the above application example, and at least one of before and after the film forming process A mask inspection step for inspecting the film forming mask is provided.
According to this method, it is possible to reliably detect a mask defect and use a defect-free film formation mask, and it is possible to provide a method for manufacturing an organic EL device capable of manufacturing an organic EL device with a high yield. .

Application Example 17 According to the method of manufacturing the organic EL device of the application example, the film forming process includes the first step.
The functional layer is formed in the film forming region of the deposition target substrate by evaporating the film forming material in the chamber, and the mask inspection step is performed under reduced pressure in the second chamber communicating with the first chamber. Is preferably carried out.
According to this method, the film forming mask can be inspected in the second chamber communicating with the first chamber without taking out the film forming mask from the first chamber into the atmosphere. It is possible to provide a method of manufacturing an organic EL device that can manufacture an organic EL device well.

The schematic front view which shows the structure of an organic electroluminescent apparatus. The principal part sectional view showing the structure of an organic EL device. The schematic diagram which shows the structure of an organic EL element. The top view which showed typically the structure of the manufacturing apparatus of an organic electroluminescent apparatus. The schematic side view which shows the internal structure along the conveyance direction of an organic vapor deposition part. (A)-(d) is the schematic which shows the mask incorporation operation | movement in a mask incorporation chamber. (A) is a schematic plan view which shows the structure of a vapor deposition mask, (b) And (c) is a schematic plan view which shows the example of the shape of an opening part. Schematic which shows the structure of a mask inspection apparatus. The schematic perspective view explaining the structure of a condensing part. The block diagram which shows the electrical and mechanical structure of a mask inspection apparatus. The flowchart which shows the manufacturing method of an organic electroluminescent apparatus. (A)-(g) is a schematic sectional drawing which shows the manufacturing method of an organic electroluminescent apparatus. The flowchart which shows a mask inspection method. Schematic which shows the mask inspection method, such as a foreign material and dirt. Schematic explaining the generation of interference fringes in the mask inspection method. Schematic which shows the mask test | inspection method of a partial deformation | transformation. Schematic which shows the mask inspection method of the whole curvature.

Hereinafter, embodiments of the present invention will be described with reference to the drawings by using an example of a manufacturing apparatus and a manufacturing method of an organic EL (electroluminescence) device which is an electro-optical device. Note that the drawings to be used are appropriately enlarged or reduced so that the part to be described can be recognized.

<Organic EL device>
First, the organic EL device in the present embodiment will be described with reference to FIGS. FIG. 1 is a schematic front view showing the configuration of the organic EL device, FIG. 2 is a main cross-sectional view showing the structure of the organic EL device, and FIG. 3 is a schematic diagram showing the configuration of the organic EL element.

As shown in FIGS. 1 and 2, the organic EL device 10 includes an element substrate 1 provided with an organic EL element 12 (see FIG. 2) corresponding to each display pixel 7, and a plurality of organic EL elements 12. And a sealing substrate 2 for sealing the element substrate 1 through a sealing layer 35 (see FIG. 2) for sealing.

The element substrate 1 includes a circuit unit 11 including a driving element that drives the organic EL element 12 (see FIG. 2).
have. In the display area 6, the display pixels 7 that can obtain the same emission color among red (R), green (G), and blue (B) have a so-called stripe configuration in which they are arranged in the same direction. The display pixel 7 is actually very fine and is enlarged for the sake of illustration.

The element substrate 1 is slightly larger than the sealing substrate 2, and two scanning line drive circuits for driving a TFT (Thin Film Transistor) element 8 (see FIG. 2) as a drive element are provided in a frame-like protruding portion. A unit 3 and one data line driving circuit unit 4 are provided. Terminal portion 1a of element substrate 1
Is mounted with a flexible relay substrate 5 for connecting the drive circuit portions 3 and 4 and the external drive circuit.

As shown in FIG. 2, in the organic EL device 10, the organic EL element 12 is laminated on the anode 31 as a first electrode (or pixel electrode), a partition wall 33 that partitions the anode 31, and the anode 31. And a functional layer 32 including a light emitting layer made of an organic film. The functional layer 32
And a cathode 34 as a second electrode (or common electrode) formed so as to face the anode 31 via the electrode.

The partition wall 33 is made of an insulating photosensitive resin such as phenol or polyimide, and is provided so as to partially cover the periphery of the anode 31 constituting the display pixel 7 and to partition the plurality of anodes 31. .

The anode 31 is connected to one of the three terminals of the TFT element 8 formed on the element substrate 1. For example, ITO (Indium Tin Oxide), which is a transparent electrode material, is formed to a thickness of about 100 nm. Electrode. Although not shown, on the lower layer (on the planarization layer 28 side) of the anode 31,
A reflective layer made of Al is provided via an insulating layer. The reflective layer reflects light emitted from the functional layer 32 toward the sealing substrate 2. Moreover, the said reflective layer is not limited to Al, What is necessary is just to have the function (reflection surface) which reflects light emission. For example, a method of forming a reflective surface having projections and depressions using an insulating organic material or an inorganic material, a method of forming the anode 31 itself with a conductive material having a reflection function, and forming an ITO film on the surface layer are included. .

  Similarly, the cathode 34 is formed of a transparent electrode material such as ITO.

As the sealing substrate 2, a substrate made of transparent glass or the like is used. On the side facing the organic EL element 12, red (R), green (G), blue (B), and three color filter elements 36 R, 36 G, and 36 B corresponding to the arrangement of the display pixels 7 and the light shielding that partitions them. A portion 37 is provided.

The organic EL device 10 has a so-called top emission type structure, in which a driving current is passed between the anode 31 and the cathode 34 so that white light emitted from the functional layer 32 is reflected by the reflective layer, and the filter element 36R. , 36G, 36B, and is taken out from the sealing substrate 2 side. Since the element substrate 1 has a top emission type structure, either a transparent substrate or an opaque substrate can be used. Examples of the opaque substrate include a thermosetting resin and a thermoplastic resin in addition to a ceramic sheet such as alumina and a metal sheet such as stainless steel that has been subjected to an insulation treatment such as surface oxidation.

The element substrate 1 is provided with a circuit unit 11 for driving the organic EL element 12. That is, a base protective layer 21 mainly composed of SiO ₂ is formed on the surface of the element substrate 1 as a base, and a silicon layer 22 is formed thereon. On the surface of the silicon layer 22, a gate insulating layer 23 mainly composed of SiO ₂ and / or SiN is formed.

Further, in the silicon layer 22, a region overlapping with the gate electrode 26 with the gate insulating layer 23 interposed therebetween is a channel region 22a. The gate electrode 26 is a part of a scanning line (not shown). On the other hand, a gate insulating layer 23 covering the silicon layer 22 and having a gate electrode 26 formed thereon.
A first interlayer insulating layer 27 mainly composed of SiO ₂ is formed on the surface.

Further, in the silicon layer 22, a low concentration source region and a high concentration source region 22c are provided on the source side of the channel region 22a, while a low concentration drain region and a high concentration drain region 22b are provided on the drain side of the channel region 22a. Is provided, so-called LDD (Li
ght Doped Drain) structure. Among these, the high-concentration source region 22 c is connected to the source electrode 25 through a contact hole 25 a that opens through the gate insulating layer 23 and the first interlayer insulating layer 27. The source electrode 25 is configured as a part of a power supply line (not shown). On the other hand, the high-concentration drain region 22b is connected to the source electrode 2 via a contact hole 24a that is opened over the gate insulating layer 23 and the first interlayer insulating layer 27.
5 is connected to a drain electrode 24 made of the same layer as that 5.

In the upper layer of the first interlayer insulating layer 27 on which the source electrode 25 and the drain electrode 24 are formed,
For example, the planarization layer 28 mainly composed of an acrylic resin component is formed. The planarization layer 28 is formed of a heat-resistant insulating resin such as acrylic or polyimide, and is formed to eliminate surface irregularities due to the TFT element 8, the source electrode 25, the drain electrode 24, and the like. Are known.

An anode 31 is formed on the surface of the flattening layer 28 and the flattening layer 28.
Is connected to the drain electrode 24 through a contact hole 28a provided in the contact hole 28a. That is, the anode 31 is connected to the high concentration drain region 2 of the silicon layer 22 via the drain electrode 24.
2b. The cathode 34 is connected to GND. Accordingly, the driving current supplied to the anode 31 from the power supply line and flowing between the cathode 34 is controlled by the TFT element 8 as a switching element. Thereby, the circuit unit 11 emits light from the desired organic EL element 12 to enable color display.

The configuration of the circuit unit 11 that drives the organic EL element 12 is not limited to this.

As shown in FIG. 3, the organic EL element 12 includes a functional layer 32 sandwiched between an anode 31 and a cathode 34.
Have The functional layer 32 includes, for example, a hole transport layer (HTL) 32h, and a light emitting layer 32LR for each color.
, 32LB, 32LG, and a plurality of thin film layers called an electron transport layer (ETL) 32e,
The layers are stacked in this order from the anode 31 side on the element substrate 1.

As the hole transport layer (HTL) 32h, for example, a triphenylamine derivative (TPD)
, Pyrazoline derivatives, arylamine derivatives, stilbene derivatives, triphenyldiamine derivatives and the like.

As a material for forming the light emitting layers 32LR, 32LB, and 32LG, a known light emitting material capable of emitting fluorescence or phosphorescence is used. For example, as a material for forming the light emitting layer 32LR, a light emitting material containing Alq ₃ (tris (8-hydroxyquinolinol) aluminum) as a host and rubrene as an assist dopant and DCM2 (a dianomethylenepyran derivative) as a red dopant. Is mentioned. As a material for forming the light emitting layer 32LB, a light emitting material containing BD102 which is a blue dopant using BH215 as a host can be given. As a material for forming the light emitting layer 32LG, a light emitting material containing GD206 as a green dopant with BH215 as a host can be given. This configuration includes a light emitting layer of three colors based on the so-called “dopant method” and enables white light emission. BH215 as a host and BD102 and GD206 as dopants are all known materials manufactured by Idemitsu Kosan.

As a material for forming the electron transport layer (ETL) 32e, for example, an oxadiazole derivative,
Anthraquinodimethane and its derivatives, benzoquinone and its derivatives, naphthoquinone and its derivatives, anthraquinone and its derivatives, tetracyanoanthraquinodimethane and its derivatives, fluorene derivatives, metal complexes of 8-hydroxyquinoline and its derivatives, etc. .

The material for forming these hole transport layer (HTL) 32h, light emitting layers 32LR, 32LB, and 32LG and electron transport layer (ETL) 32e is a so-called low-molecular material, and can be formed by a vacuum deposition method.

The element substrate 1 having such an organic EL element 12 is solid-sealed with the transparent sealing substrate 2 without a gap through a sealing layer 35 using a transparent thermosetting epoxy resin or the like as a sealing member. Yes.

The organic EL device 10 is manufactured by using the organic EL device manufacturing apparatus of the present embodiment, which will be described later, and the functional layer 32 including the light-emitting layer has little variation in film thickness with respect to a desired film thickness, and has a high yield. A film is formed. Therefore, the light emission characteristics in the functional layer 32 are stabilized, and desired luminance characteristics are obtained.

The organic EL device 10 is not limited to the top emission type, and the cathode 34 is formed using a conductive material such as opaque Al having a reflection function, and the organic EL element 12 emits light by the cathode 34.
A bottom emission type structure that is reflected from the element substrate 1 and taken out from the element substrate 1 side may be used.

<Organic EL device manufacturing device>
Next, an organic EL device manufacturing apparatus will be described with reference to FIGS. 4 is a top view schematically showing the configuration of the manufacturing apparatus of the organic EL device, FIG. 5 is a schematic side view showing the internal structure along the transport direction of the organic vapor deposition section, and FIGS. It is the schematic which shows the mask incorporation operation | movement in a mask incorporation chamber.

As shown in FIG. 4, the manufacturing apparatus 100 of the organic EL device 10 of the present embodiment includes a substrate W as a film formation substrate on which a partition wall 33 that partitions the anode 31 and the anode 31 of the organic EL element 12 is formed.
Is a single-wafer type vapor deposition apparatus in which an organic film and an inorganic film are vapor-deposited after being pre-processed, and is composed of three blocks, a pre-treatment unit 132, an organic vapor deposition unit 133, and an inorganic vapor deposition unit 134, respectively. Yes. In particular, the organic vapor deposition unit 133 is configured to selectively form an organic film in a film formation region of the substrate W using a film formation mask. Details of each block will be described below.

The pretreatment unit 132 includes a preparation chamber 120, a heating chamber 121, and a pretreatment chamber 122, centering on a substrate transfer chamber 128 a having a substrate transfer robot 123 a that transfers the substrate W therein. The charging chamber 120 is depressurized using a vacuum pump after the substrate W that has been cleaned (for example, wet cleaning such as pure water cleaning or dry cleaning such as UV irradiation) is removed. Is done. All subsequent processes are maintained in a predetermined reduced pressure state, and the substrate W is transported. The substrate W is transferred from the decompressed preparation chamber 120 to the substrate transfer robot 123a in the substrate transfer chamber 128a.
The arm is carried to the heating chamber 121, and heat treatment is performed for the purpose of removing moisture adhering to the cleaning. After that, it is carried to the pretreatment chamber 122 and surface treatment (plasma treatment) with oxygen plasma is performed. This is because the oxygen plasma makes the HOMO level of the anode 31 close to the HOMO level of the organic film, thereby lowering the barrier of the organic film against holes injected from the anode 31 and thereby improving the light emission performance of the organic EL element 12. This is to increase it. Pretreatment chamber 122
The substrate W that has been subjected to the surface treatment is transferred to the organic vapor deposition section 133 through the substrate transfer chamber 128a.

The organic vapor deposition section 133 includes a mask assembly chamber 124, an in-line organic vapor deposition chamber 125, a mask dismantling chamber 126, and a mask reflux chamber 127. The mask assembly chamber 124 is connected to the substrate transfer chamber 128 a of the pretreatment unit 132, and the mask disassembly chamber 126 is the inorganic vapor deposition unit 1.
34 substrate transfer chambers 128b.

As shown in FIG. 5, the substrate W carried from the substrate transfer chamber 128 a is transferred to the mask incorporation chamber 12.
4 is overlapped with a vapor deposition mask 50 as a film formation mask. The vapor deposition mask 50 has openings 50 a corresponding to the film formation pattern of the functional layer 32. For the purpose of improving the adhesion when the vapor deposition mask 50 and the substrate W are overlapped, the transparent substrate 60 is placed on the surface of the substrate W opposite to the film forming surface and also functions as a weight. Functions other than the weight of the transparent substrate 60 will be described in a mask inspection method described later.

As shown in FIG. 6A, the vapor deposition mask 50 and the transparent substrate 60 are held above the mask assembly chamber 124 and are in a standby state. Next, as shown in FIG. 2B, the vapor deposition mask 50 first descends, and the substrate W enters between the vapor deposition mask 50 and the transparent substrate 60. Then, the substrate W is lowered and overlapped with the vapor deposition mask 50 at a predetermined position. After that,
As shown in c), the transparent substrate 60 descends and is placed on the back surface of the substrate W (the surface opposite to the film formation surface). The substrate W is pressed toward the vapor deposition mask 50 by the transparent substrate 60, and the substrate W and the vapor deposition mask 50 are brought into close contact with each other. As shown in FIG. 4D, the substrate W overlapped with the vapor deposition mask 50.
Is fed into the organic vapor deposition chamber 125.

As shown in FIG. 5, the organic vapor deposition unit 133 includes an organic vapor deposition chamber 125, a mask reflux chamber 127 provided so as to overlap with the organic vapor deposition chamber 125, and a mask inspection apparatus provided inside the mask reflux chamber 127. 150.

The organic vapor deposition chamber 125 has a plurality of vapor deposition chambers 125b as first chambers connected in the transport direction of the substrate W. Each vapor deposition chamber 125b has an evaporation source 110 at the bottom, and is partitioned by a partition wall 125a in the transport direction. Further, a transport mechanism 113 that transports the substrate W superimposed on the vapor deposition mask 50 to the mask dismantling chamber 126 in a predetermined direction while facing the respective evaporation sources 110 is provided.

Each of the plurality of vapor deposition chambers 125b includes an evaporation source 110 that evaporates different film forming materials, and the substrate W is transported by the transport mechanism 113 over the plurality of vapor deposition chambers 125b. HTL) 32h, R, B, G light emitting layers 32LR, 32LB, 32L
G and five organic films of an electron transport layer (ETL) 32e are sequentially deposited to form the functional layer 32.

Note that the number of evaporation sources 110 provided in the vapor deposition chamber 125b is not limited to one, and it is possible to form a film in a desired range according to the size of the substrate W (more specifically, the length orthogonal to the transport direction). As expected
You may arrange the some evaporation source 110 in the direction which cross | intersects a conveyance direction.

The substrate W on which the organic films are sequentially deposited is carried to the mask dismantling chamber 126. Mask dismantling room 12
6, the substrate W sandwiched between the vapor deposition mask 50 and the transparent substrate 60 is separated. The separated substrate W is sent to the inorganic vapor deposition unit 134.

The vapor deposition mask 50 and the transparent substrate 60 separated in the mask dismantling chamber 126 are superimposed again and sent to the mask reflux chamber 127.

The mask reflux chamber 127 is used to attach the used deposition mask 50 and the transparent substrate 60 to the organic deposition unit 133.
It is the conveyance path | route provided with the conveyance mechanism 115 which forwards from the downstream of this to upstream. Moreover, it communicates with the upstream mask assembly chamber 124 and the downstream mask disassembly chamber 126, and is kept in a reduced pressure state. That is, the mask reflux chamber 127 is a second chamber communicated with the vapor deposition chamber 125b as the first chamber.
It is a chamber.

The used vapor deposition mask 50 is subjected to mask inspection by passing below a mask inspection apparatus 150 provided in the mask reflux chamber 127, and if a defect is detected, it is placed behind the mask incorporation chamber 124. It is recovered in the provided spare chamber 124a (see FIG. 4).
A spare vapor deposition mask 50 is stored in the spare chamber 124a, and is replaced with a vapor deposition mask 50 in which a defect has been detected. For example, the vapor deposition mask 50 in which a defect such as foreign matter or dirt has occurred is cleaned by performing wet or dry cleaning, and is repeatedly used.
Accordingly, the mask inspection is always performed after use, and the organic film is always formed using the vapor deposition mask 50 having no defect.

As shown in FIG. 4, the inorganic vapor deposition part 134 is comprised from the board | substrate conveyance chamber 128b, the metal vapor deposition chambers 129a and 129b which vapor-deposit the cathode 34, and the board | substrate conveyance chamber 128c. Organic vapor deposition part 1
The substrate W that has been deposited in 33 is transported to one of the two metal deposition chambers 129a and 129b by the substrate transport robot 123b in the substrate transport chamber 128b, and the cathode 34 is deposited. The substrate W on which the cathode 34 is deposited is transferred to the substrate transfer chamber 12 by the substrate transfer robot 123b.
It is carried to 8c and carried out to the apparatus side which performs a sealing process. In the metal vapor deposition chambers 129a and 129b, the configuration of the evaporation source may be determined in consideration of the configuration of the cathode 34 and the film formation rate of the functional layer 32 in the organic vapor deposition chamber 125.

Inorganic films such as the cathode 34 need to heat the film-forming material at a higher temperature during vapor deposition than organic films, so the influence of radiant heat from the evaporation source is greater than when organic films are used. Therefore, the metal deposition chambers 129a and 129b for depositing the cathode 34 and the like need to have a large distance between the substrate W and the evaporation source, which is a batch type compared to the in-line type organic deposition unit 133 on which an organic film is formed. Vapor deposition equipment is suitable.

When the productivity of film formation in the inorganic vapor deposition unit 134 is inferior to the productivity of film formation in the organic vapor deposition unit 133, for example, a plurality of evaporation sources are arranged in one metal vapor deposition chamber 129 a and the cathode 34.
It is good also as a structure which fills with each inorganic material and forms into a film.
Further, as the cathode 34, it is preferable to use a combination of ITO and a metal such as Ca, Ba, Al or a fluoride such as LiF. Especially, Ca having a small work function on the side closer to the functional layer 32,
It is preferable to form a film of Ba and LiF and to form ITO having a large work function on the far side.
Therefore, the type of thin film formed in the metal vapor deposition chamber 129a and the metal vapor deposition chamber 129b may be changed, and a plurality of evaporation sources are provided in the same metal vapor deposition chamber as described above, and each is filled with different film forming materials. Then, vapor deposition may be performed.

<Deposition mask>
Next, an evaporation mask 50 as a film formation mask will be described with reference to FIG. FIG.
(a) is a schematic plan view showing the configuration of the vapor deposition mask, and (b) and (c) are schematic plan views showing examples of the shape of the opening.

As shown in FIG. 7A, the vapor deposition mask 50 includes a plurality of mask regions 52 arranged in a matrix with respect to the base material 51, and four alignment marks 5 arranged at the four corners of the base material 51.
3. One mask region 52 corresponds to one organic EL device 10, and an opening 50 a corresponding to a film formation pattern, that is, a film formation region of the substrate W is formed in the mask region 52. That is, the vapor deposition mask 50 of this embodiment is used when the functional layer 32 is formed using the mother substrate on which the plurality of element substrates 1 are imprinted as the substrate W.

The opening 50a provided in the vapor deposition mask 50 is an opening corresponding to one display pixel 7 (see FIG. 1), for example, as shown in FIG. In consideration of overlay accuracy with the substrate W (element substrate 1), the opening area is slightly larger than the film formation region. Also,
For example, as shown in FIG. 5C, a plurality of display pixels 7 that can emit light of the same color are used.
There may be a slit-like opening corresponding to the row of

In the present embodiment, the vapor deposition mask 50 is configured using a metal mask. As a material for the metal mask, Invar having a material structure of Fe-36 wt% Ni can be used. Its thickness is about 30-50 μm. The vapor deposition mask 50 is not limited to a metal mask, and may be a silicon mask using a silicon substrate capable of forming the opening 50a with high accuracy.

Such a vapor deposition mask 50 is attached to a frame-like frame (not shown) so as not to be distorted, and is used by being superimposed on the substrate W as described above. Accordingly, not only the adhesion of foreign matter and dirt that hinders the adhesion to the substrate W but also dimensional defects such as deformation of the opening 50a affect the film formation. It needs to be detected properly. Thereafter, a mask inspection apparatus 150 capable of detecting these defects (mask defects).
Will be described with reference to FIGS.

<Mask inspection device>
FIG. 8 is a schematic view showing the structure of the mask inspection apparatus, FIG. 9 is a schematic perspective view for explaining the structure of the light collecting unit, and FIG. 10 is a block diagram showing the electrical and mechanical structure of the mask inspection apparatus.

As shown in FIG. 8, the mask inspection apparatus 150 includes a transfer mechanism 1 in the mask reflux chamber 127.
The housing 151 is provided so as to face the vapor deposition mask 50 conveyed by 15.

Inside the housing 151 are a light source 153 and a plurality of (four) reflecting mirrors (hereinafter referred to as mirrors).
154a, 154b, 154c, and 154d, a light collecting unit 155, and a light receiving unit 156 are provided.

The light source 153 is in a line shape in which light emitting elements such as LEDs are arranged in a certain direction, and light in a band shape is emitted in a direction intersecting (orthogonal) with the transport direction of the vapor deposition mask 50.
The emitted strip-shaped light is arranged in the vicinity of the edge of the glass window 152 so as to reach the surface of the vapor deposition mask 50 through the transparent glass window 152 provided on the bottom surface 151 a of the casing 151.
By providing the glass window 152, it is possible to prevent foreign matter and the like from entering the casing 151 and causing problems in optical detection. The glass window 152 is not essential, and the glass window 15
You may open the part in which 2 was provided.
Further, the light source 153 itself may have a condensing means such as an optical lens so that the band-like light does not diffuse.
A light-shielding cover 157 having an opening 157a that opens toward the glass window 152 is provided behind the light source 153 so that light does not leak outside the opening 157a.

The length of the band-shaped light, that is, the length in the direction intersecting (orthogonal) with the transport direction of the vapor deposition mask 50 is equivalent to the width of the vapor deposition mask 50 in the same direction. Therefore, as the vapor deposition mask 50 is transported (forwarded) to the upstream side of the organic vapor deposition section 133, the surface of the vapor deposition mask 50 can be scanned over the entire surface with the strip-shaped light through the transparent substrate 60. It has become.

The light source 153 of this embodiment can switch and emit white light and monochromatic light having a specific wavelength characteristic. A typical wavelength of monochromatic light is, for example, 589 nm, which is substantially orange, which is the emission color of a sodium lamp. As a configuration capable of emitting white light and monochromatic light in this way, for example, a combination of a white light emitting element and a monochromatic light emitting element, or a combination of a plurality of light emitting elements having different emission colors (wavelength characteristics), A configuration in which all the light emitting elements emit light to emit white light, and a specific light emitting element emits light to emit monochromatic light can be given.

The strip-shaped light (reflected light) reflected from the surface of the vapor deposition mask 50 is guided to the light collecting unit 155 by the four mirrors 154a, 154b, 154c, and 154d provided inside the housing 151,
Finally, the light is condensed on the light receiving unit 156 provided on the upper side wall of the casing 151.

Each of the mirrors 154a, 154b, 154c, and 154d can be adjusted in mounting position and angle so that the reflected light is surely collected on the light receiving unit 156.

As shown in FIG. 9, the condensing unit 155 is, for example, a cylindrical optical lens, and is curved with a curvature R toward the light receiving unit 156 so that the incident band-like light is collected on the light receiving unit 156. Yes.

The light receiving unit 156 is a line sensor in which light receiving elements such as an image sensor such as a CCD and a semiconductor optical sensor are arranged in a predetermined direction, and has a predetermined resolution in consideration of the dimensional accuracy of a detection target.

Since it is actually difficult to provide the light receiving unit 156 according to the length of the band-shaped light emitted from the light source 153, the light-receiving unit 156 receives the incident band-shaped light by providing the light collecting unit 155. To collect light. In other words, the specification of the light collecting unit 155 may be set so that the light collecting characteristics according to the specifications of the light source 153 and the light receiving unit 156 are obtained. Thereby, the light receiving unit 156
It is possible to reduce design restrictions such as selection and arrangement.

As shown in FIG. 10, the mask inspection apparatus 150 includes a light source 153, a light receiving unit 156, a PC (personal computer) 160 as an image processing unit, a display unit 161 connected to the PC 160, and connected thereto. And a control unit 158 that performs overall control.
The control unit 158 is also connected to a transport mechanism 115 as a scanning mechanism, and a mask assembly chamber 124 and a mask disassembly chamber 126 as arrangement mechanisms for overlapping and removing the transparent substrate 60 from the vapor deposition mask 50. Each part of the mask inspection apparatus 150 can be controlled in conjunction with the mechanism.
The PC 160 performs image processing for synthesizing the image of the surface of the vapor deposition mask 50 based on the light reception signal of the light receiving unit 156 obtained by scanning with the strip-shaped light emitted from the light source 153. Furthermore, an image of the design surface of the vapor deposition mask 50 is stored in a storage unit or the like in advance, and image processing is performed in which the image is read and superimposed with the image synthesized by the light reception signal. As a reference for superimposing, the alignment mark 53 provided on the vapor deposition mask 50 is used. The image subjected to these image processes can be displayed and confirmed on the display unit 161.

About the mask inspection method of the vapor deposition mask 50 using such a mask inspection apparatus 150,
A method for manufacturing the organic EL device 10 will be described as an example.

<Method for manufacturing organic EL device>
FIG. 11 is a flowchart showing a method for manufacturing an organic EL device, and FIGS. 12A to 12G are schematic cross-sectional views showing a method for manufacturing an organic EL device.

As shown in FIG. 11, the manufacturing method of the organic EL device 10 of the present embodiment includes a plasma processing step (step S1) for performing a surface treatment on the substrate W, a hole transport layer forming step (step S2),
A light emitting layer forming step (steps S3 to S5) for forming light emitting layers 32LR, 32LB, and 32LG that can obtain R, B, and G emission colors, and an electron transport layer forming step (step S6), respectively.
), A cathode forming step (step S7), and a mask inspection step (step S8). Hereinafter, a method of forming the organic EL element 12 on the element substrate 1 will be described. In practice, however, each component of the organic EL element 12 is formed on the substrate W which is a mother substrate as described above.

Step S1 in FIG. 11 is a plasma processing step. In step S1, the element substrate 1 on which the anode 31 and the partition wall 33 are formed is put into the pretreatment unit 132 (see FIG. 4) of the organic EL device manufacturing apparatus 100 of the above embodiment. The element substrate 1 is heated in the heating chamber 121 to remove moisture, and as shown in FIG. 12A, the surface of the anode 31 is plasma-treated in the pretreatment chamber 122 using oxygen as a processing gas. Then, the process proceeds to step S2.

Step S2 in FIG. 11 is a hole transport layer forming step. In step S <b> 2, the plasma-treated element substrate 1 is sent to the mask assembly chamber 124. And as shown in FIG.
The element substrate 1 and the vapor deposition mask 50 are positioned and brought into close contact so that the opening 50a of the vapor deposition mask 50 and the film formation region E having the anode 31 partitioned by the partition wall 33 match.
Although not shown in FIG. 12B, the transparent substrate 60 is overlaid on the element substrate 1 as a weight, and the element substrate 1 is pressed against the vapor deposition mask 50 (see FIG. 5 or FIG. 6).
. That is, the process of stacking the transparent substrate 60 and the element substrate 1 (substrate W) is an arrangement process. Then, the element substrate 1 having the deposition mask 50 superimposed on the film formation surface is sent to the organic deposition chamber 125. In the organic vapor deposition chamber 125, the element substrate 1 is transported by the transport mechanism 113 and passes through the first vapor deposition chamber 125b where the evaporation source 110 is disposed, whereby the hole transport layer forming material is evaporated from the evaporation source 110, A hole transport layer 32h is formed for each film formation region E. And it progresses to step S3-step S5 sequentially.

Steps S3 to S5 in FIG. 11 are light emitting layer forming steps. In step S3 to step S5, as shown in FIGS. 12C to 12E, the element substrate 1 superimposed on the vapor deposition mask 50 sequentially passes through the three vapor deposition chambers 125b by the transport mechanism 113, and each vapor deposition chamber. 125
The light emitting layer forming material is evaporated from the evaporation source 110 provided in b, and the light emitting layers 32LR, 32LB, and 32LG are sequentially formed for each film forming region E. Then, the process proceeds to step S6.

Step S6 in FIG. 11 is an electron transport layer forming step. In step S6, FIG.
), The element substrate 1 overlapped with the vapor deposition mask 50 is the last vapor deposition chamber 125b.
, The electron transport layer forming material evaporates from the evaporation source 110, and the film forming region E
The electron transport layer 32e is formed every time.
The above steps S2 to S6 correspond to the functional layer forming step. In the functional layer forming step, the element substrate 1 and the vapor deposition mask 50 are in close contact with each other through the partition wall 33, so that the vapor deposition mask 50 is directly applied to the surface of the plasma-treated anode 31 and various organic films after film formation. can not touch. Therefore, problems such as film defects caused by direct contact of the vapor deposition mask 50 with the anode 31 and various organic films are avoided. Further, since the film is not formed except in the film formation region E, the functional layer 32 having a desired film thickness is formed. Then, the process proceeds to step S7.

Step S7 in FIG. 11 is a cathode forming step. In step S <b> 7, the element substrate 1 on which the functional layer 32 is formed is sent to the inorganic vapor deposition unit 134. In the inorganic vapor deposition section 134, as described above,
The element substrate 1 is sent to one of the two metal vapor deposition chambers 129a and 129b, and the cathode 34 is formed to cover the functional layer 32 and the partition wall portion 33 by a vacuum vapor deposition method. The cathode 34 is ITO, and the film thickness is 100 to 200 nm. Thereby, the organic EL element 12 having the functional layer 32 between the anode 31 and the cathode 34 is formed. Then, the process proceeds to step S8.

Step S8 in FIG. 11 is a mask inspection process. In step S8, the transparent substrate 60 is overlapped on the used vapor deposition mask 50, and the lower part of the mask inspection apparatus 150 is passed through the mask reflux chamber 127 during transport. The surface of the vapor deposition mask 50 is scanned by the band-like light emitted from the light source 153 as the vapor deposition mask 50 is conveyed, and the PC 160 displays an image of the surface of the vapor deposition mask 50 by the light reception signal of the light receiving unit 156 that receives the reflected light. Synthesize. Based on the synthesized image, a defect related to dimensional accuracy such as adhesion of foreign matter or dirt, deformation of the vapor deposition mask 50, or the like is detected. A more specific mask inspection method will be described later.

On the other hand, the element substrate 1 on which the organic EL element 12 is formed has a sealing substrate 2 with a sealing layer 35 interposed therebetween.
And the organic EL device 10 is completed (see FIG. 2). Such a solid sealing structure protects the organic EL element 12 from invading moisture and gas, and ensures a predetermined light emission lifetime. In step S7, after forming the cathode 34, a film made of transparent SiO ₂ having a gas barrier property, SiN, SiON, or a mixture thereof may be further laminated. Thereby, a longer light emission lifetime can be realized.

According to the manufacturing method of the organic EL device 10 described above, the functional layer 32 is formed using the organic EL device manufacturing apparatus 100 including the mask inspection device 150. Therefore, it is always detected whether or not the vapor deposition mask 50 after use has a defect, and the vapor deposition mask 50 having no defect is detected.
Is used again to form the functional layer 32. Therefore, the organic EL device 10 having stable light emission characteristics can be manufactured with a high yield.

<Mask inspection method>
FIG. 13 is a flowchart showing the mask inspection method, and FIGS. 14 to 17 are schematic views showing the mask inspection method.

As shown in FIG. 13, in the mask inspection method of this embodiment, a first scanning step (step S) of scanning the surface of the vapor deposition mask 50 in a predetermined direction with strip-shaped white light emitted from the light source 153.
11) and the white light reflected from the surface of the vapor deposition mask 50 in the first scanning step.
6 and a first detection step (step S12) for detecting the adhesion of a foreign substance having a predetermined size or more based on the image synthesized by the light reception signal of the light receiving unit 156. Further, monochromatic light having a specific emission wavelength region is emitted from the light source 153, and the vapor deposition mask 50 is emitted.
A second scanning step (step S13) for scanning the surface of the film in a predetermined direction, and the monochromatic light reflected from the surface of the vapor deposition mask 50 in accordance with the second scanning step is received by the light receiving unit 156, and the light receiving unit 15
A second detection step (step S14) for detecting a deformation defect of the vapor deposition mask 50 based on an interference fringe image of monochromatic light generated between the transparent substrate 60 synthesized based on the light reception signal 6 and the vapor deposition mask 50; It has. In addition, an availability determination step (step S15) for determining whether or not the vapor deposition mask 50 can be used based on the results of the first and second detection steps is provided.

In the first scanning step (step S11) of FIG. 13, as shown in FIG.
7, strip-shaped white light is emitted from the light source 153 to the vapor deposition mask 50 transported by the transport mechanism 115. By passing the lower part of the mask inspection apparatus 150 once, almost the entire surface of the vapor deposition mask 50 can be scanned with the band-like white light.

In the first detection step (step S12) of FIG. 13, a defect of the vapor deposition mask 50 is detected based on an image synthesized by the light reception signal of the light receiving unit 156 along with the scanning. As shown in FIG. 14, the surface 50b on the incident side of white light is irradiated by irradiating the vapor deposition mask 50 with white light.
It is possible to detect foreign matter 71 and 73 and dirt adhered to the surface. Even on the surface 50c opposite to the white light incident side, the foreign matter 72 attached to the opening 50a can be detected. Since the surface 50b on the incident side is in contact with the substrate W, the foreign matters 71 and 73 and dirt adhering mainly to the surface 50b are the most problematic. However, the adhesion state of the foreign matters depends greatly on the manufacturing conditions and the manufacturing environment. Is done. Therefore, depending on the resolution of the light receiving unit 156, even fine foreign matters and dirt can be detected, but it is efficient to perform control so as to detect foreign matters and dirt having a predetermined size or more.

Further, from the viewpoint of forming the functional layer 32 in the film formation region E with good yield, only the foreign matters 71 and 72 attached to the opening 50a may be detected. Since the irradiated white light passes through the opening 50a, the vapor deposition mask 5 synthesized by the PC 160 as the image processing unit.
In the image of 0, the opening 50a becomes dark. On the other hand, the foreign matter 71 attached to the opening 50a.
72, the reflected light is obtained, so that the foreign matter 71, 72 has higher discrimination than the foreign matter 73 attached to the surface 50b. That is, the foreign objects 71 and 72 can be easily detected at the opening 50a.

Further, in the PC 160, by reading an image of the design surface 50b of the vapor deposition mask 50 stored in advance in a storage unit or the like and superimposing it on the image synthesized by the light reception signal,
For example, it is possible to detect whether there is an abnormality in the shape of the opening 50a. That is,
Problems related to dimensional accuracy in the vapor deposition mask 50 can also be detected.

In the second scanning step (step S13) of FIG. 13, as shown in FIG.
The surface of the vapor deposition mask 50 is scanned by emitting strip-shaped monochromatic light from 3. Since the scanning with white light is performed at least once in the first scanning step (step S11), the vapor deposition mask 50 is relatively moved by using the transport mechanism 115 as a scanning mechanism so as to pass again below the mask inspection apparatus 150. Move. For example, in the mask reflux chamber 127, the scanning may be performed while the deposition mask 50 that has once moved to the upstream side is moved to the downstream side, or may be moved to the upstream side again after being returned to the downstream side. Scanning may be performed.

In the second detection step (step S14) of FIG. 13, the transparent substrate 6 is used in the second scanning step.
Since the monochromatic light is irradiated to the surface 50b of the vapor deposition mask 50 on which 0 is superimposed, the transparent substrate 6
Depending on the degree of adhesion between 0 and the surface 50b, a plurality of interference fringes of monochromatic light are observed between the transparent substrate 60 and the surface 50b, for example, as shown in FIG. That is, the PC 160 can synthesize an image of the vapor deposition mask 50 with the interference fringes.
In this example, the plurality of interference fringes are concentric ovals. The interval between the interference fringes depends on the wavelength characteristics of monochromatic light. If the gap between the transparent substrate 60 and the surface 50b of the vapor deposition mask 50 is substantially constant,
The interval between the interference fringes is almost constant. Therefore, for example, when partial deformation occurs in the vapor deposition mask 50, the above-mentioned gap fluctuates, and the interference fringe pattern distortion is partially narrowed or widened as shown in FIG. Will occur. Based on the composite image of the vapor deposition mask 50, such interference fringe pattern distortion, that is, partial deformation of the vapor deposition mask 50 is detected. Since the foreign matter may adhere to the surface 50b and the gap may fluctuate, the size of the foreign matter can be specified.

Further, as described above, the vapor deposition mask 50 is repeatedly used in the organic EL device manufacturing apparatus 100. Therefore, on the surface 50c of the vapor deposition mask 50 facing the evaporation source 110,
The evaporated film forming material adheres to form a film. When the film formation is repeated with repeated use, the vapor deposition mask 50 itself is counteracted as shown in FIG. 17A due to the weight of the vapor deposition mask 50 increasing or due to the stress of the film formed. Sometimes. In this case, as shown in FIG. 17B, in the detected interference fringe pattern, the interval between the interference fringes is different between the central portion and the peripheral portion. The overall warpage of the vapor deposition mask 50 is detected based on the density of the interference fringe spacing. For example, if the amount of warpage of the vapor deposition mask 50 and the number of interference fringes in the longitudinal direction or short direction of the vapor deposition mask 50 are obtained in advance, the vapor deposition mask warped to a predetermined size or more by counting the number. 50 can be detected.

In the usability determination step (step S15) in FIG. 13, the first detection step (step S12).
And the deposition mask 5 based on the detection result in the second detection step (step S14).
Determine whether 0 is available. If there is no defect (mask defect), it is reused as OK. When a defect (mask defect) is detected, NG is discharged (collected) into the preliminary chamber 124a as described above.

According to the manufacturing apparatus 100 of the organic EL device including the mask inspection device 150 and the manufacturing method of the organic EL device 10, the organic EL device can be used in the manufacturing apparatus 100 without taking out the vapor deposition mask 50 in the atmosphere and inspecting it. In the state (under reduced pressure), the vapor deposition mask 50 can be inspected. Therefore, it is not necessary to stop the manufacturing apparatus 100 of the organic EL device in order to perform the inspection of the vapor deposition mask 50, and a reliable and efficient mask inspection and a high yield and productivity in manufacturing the organic EL device 10 can be realized.

Further, according to the mask inspection method described above, foreign matters and dirt of a predetermined size or more attached to the vapor deposition mask 50, particularly the opening 50a, by at least two scans that irradiate white light and monochromatic light.
It is possible to detect a plurality of quality characteristics such as dimensional accuracy, partial deformation of the vapor deposition mask 50 and overall warpage.

  Various modifications other than the above embodiment are conceivable. Hereinafter, a modification will be described.

(Modification 1) In the above embodiment, the light emitted from the light source 153 is not limited to white light and monochromatic light. For example, white light or monochromatic light may be used. That is, it is conceivable to use properly according to the quality characteristics of the vapor deposition mask 50 to be detected.

(Modification 2) In the above embodiment, when the surface of the vapor deposition mask 50 is scanned with white light, the transparent substrate 60 does not have to be superimposed on the vapor deposition mask 50. In other words, the placement step of placing the transparent substrate 60 on the surface 50b of the vapor deposition mask 50 in the mask inspection method may be performed before scanning with monochromatic light.

(Modification 3) In the said embodiment, the scanning process which scans the surface of the vapor deposition mask 50 by strip | belt-shaped light is not limited to 2 times of a 1st scanning process and a 2nd scanning process. Repeated scanning may be performed. The detection accuracy of the defect of the vapor deposition mask 50 can be improved.

(Modification 4) In the said embodiment, the mask inspection apparatus 150 with which the manufacturing apparatus 100 of an organic EL apparatus is equipped is not limited to one. For example, two mask inspection apparatuses 150 are provided in the mask reflux chamber 127 in the transport direction of the vapor deposition mask 50. The light source 153 of one device may emit white light, and the light source 153 of the other device may emit monochromatic light. Continuous mask inspection can be performed while the vapor deposition mask 50 is forwarded upstream.

(Modification 5) In the above embodiment, the mask inspection apparatus 150 may not be fixedly disposed in the mask reflux chamber 127. For example, the mask inspection apparatus 150 itself may be moved with respect to the vapor deposition mask 50. A plurality of scans can be performed without stopping the feeding of the vapor deposition mask 50. In other words, the scanning mechanism is not limited to the transport mechanism 115 that transports the vapor deposition mask 50.

(Modification 6) The organic EL device manufacturing apparatus 100 provided with the mask inspection apparatus 150 of the above embodiment is not limited to the one having the in-line type organic vapor deposition section 133. For example, it is a batch type organic vapor deposition section, and a second chamber communicating with the first chamber is provided in addition to the first chamber for film formation. It is only necessary to provide at least the light source 153, the light receiving unit 156, and the scanning mechanism in the mask inspection apparatus 150 in the second chamber.
Therefore, the mask inspection process may be performed not only for inspecting the vapor deposition mask 50 after use but also before use.

(Modification 7) The manufacturing apparatus 100 equipped with the mask inspection apparatus 150 of the above embodiment is not limited to a vapor deposition apparatus intended for manufacturing an organic EL device. For example, the present invention can be applied to a deposition apparatus, a sputtering apparatus, an ion plating apparatus, a CVD apparatus, or the like as a manufacturing apparatus for various display devices such as a liquid crystal device and a PDP device.

DESCRIPTION OF SYMBOLS 10 ... Organic EL apparatus, 12 ... Organic EL element, 32 ... Functional layer, 50 ... Deposition mask as a film-forming mask, 50a ... Opening, 60 ... Transparent substrate, 71, 72, 73 ... Foreign material, 100 ... Organic EL Device manufacturing apparatus, 110 ... evaporation source, 115 ... transport mechanism as scanning mechanism, 124 ...
Mask assembly chamber as an arrangement mechanism, 125b ... Deposition chamber as a first chamber, 126 ... Mask disassembly chamber as an arrangement mechanism, 127 ... Mask reflux chamber as a second chamber, 150 ...
Mask inspection apparatus, 153... Light source, 155... Condensing unit, 156 .. light receiving unit, 160 .. personal computer as image processing unit, E .. film forming region, W.

Claims (17)

A mask inspection apparatus for a film forming mask having an opening corresponding to a film forming pattern,
A light source that emits light in a strip shape;
A scanning mechanism that relatively moves the light source and the deposition mask so as to scan the surface of the deposition mask in a predetermined direction with the band-shaped light;
A light-receiving unit that receives light reflected from the surface of the film-formation mask along with the scanning;
An image processing unit that synthesizes a light reception signal of the light receiving unit with an image;
A mask inspection apparatus comprising: The mask inspection apparatus according to claim 1, wherein the image processing unit performs image processing to superimpose a design image of the deposition mask and an image synthesized based on the light reception signal. The mask inspection apparatus according to claim 1, wherein the light source emits white light. An arrangement mechanism for placing a transparent substrate on the surface of the film-forming mask;
The light source emits monochromatic light having a specific emission wavelength range toward the transparent substrate,
The mask inspection apparatus according to claim 1, wherein the image processing unit synthesizes an interference fringe image of the monochromatic light generated between the transparent substrate and the film forming mask. The mask inspection apparatus according to claim 4, wherein the light source switches between white light and monochromatic light having the specific emission wavelength range and emits the light. 6. The light collecting unit according to claim 1, further comprising a condensing unit that condenses the light reflected from the surface of the film forming mask with the scanning on the light receiving unit. Mask inspection equipment. An organic EL device for forming a functional layer constituting an organic EL element in the film formation region of the film formation substrate by superimposing a film formation mask having an opening corresponding to the film formation region and the film formation substrate Manufacturing equipment,
An evaporation source for evaporating a film forming material; and at least one first chamber for forming a film while holding the deposition target substrate on which the deposition mask is superimposed so as to face the evaporation source; ,
A second chamber in communication with the first chamber;
A mask inspection apparatus according to any one of claims 1 to 6,
An apparatus for manufacturing an organic EL device, wherein at least the light source, the scanning mechanism, and the light receiving unit of the mask inspection apparatus are provided in the second chamber. A plurality of the first chambers are connected and arranged;
The second chamber is a transport path that communicates with the first chamber on the upstream side and the first chamber on the downstream side and transports the used deposition mask from the downstream side to the upstream side. The manufacturing apparatus of the organic EL device according to claim 7. A mask inspection method for a film formation mask having an opening corresponding to a film formation pattern,
A scanning step of scanning the surface of the film-forming mask in a predetermined direction with strip-shaped light emitted from a light source;
A detection step of detecting a mask defect based on an image synthesized by a light reception signal of the light receiving unit by receiving light reflected from the surface of the film forming mask with the scanning by a light receiving unit;
A mask inspection method comprising: 10. The detection step detects a dimensional defect as the mask defect by comparing a design image of the film formation mask with an image synthesized based on the light reception signal. The mask inspection method according to 1. The scanning step emits white light from the light source,
11. The mask inspection method according to claim 9, wherein the detection step detects adhesion of foreign matters or dirt having a predetermined size or more as the mask defect. 12. The mask inspection method according to claim 11, wherein the detecting step detects the foreign matter adhering to the opening of the film forming mask. A placement step of placing a transparent substrate on the surface of the film formation mask;
The scanning step emits monochromatic light having a specific emission wavelength range from the light source toward the transparent substrate,
The detection step includes a deformation defect as the mask defect based on an interference fringe image of the monochromatic light generated between the transparent substrate synthesized based on a light reception signal of the light receiving unit and the film formation mask. The mask inspection method according to claim 9, wherein: 14. The mask inspection method according to claim 13, wherein the detecting step detects a warp of the film-forming mask from a density state of the interference fringes in a predetermined direction in the image of the interference fringes of the monochromatic light. . A mask inspection method for a film formation mask having an opening corresponding to a film formation pattern,
A first scanning step of scanning the surface of the film-forming mask in a predetermined direction with a strip-shaped white light emitted from a light source;
The white light reflected from the surface of the film forming mask in the first scanning step is received by a light receiving unit, and based on an image synthesized by the light reception signal of the light receiving unit, at least a predetermined size or more A first detection step for detecting adhesion of foreign matter;
An arrangement step of arranging a transparent substrate on the surface of the film formation mask; and
A second scanning step of emitting monochromatic light having a specific emission wavelength range from the light source toward the transparent substrate, and scanning the surface of the film forming mask in a predetermined direction;
The monochromatic light reflected from the surface of the film-formation mask in the second scanning step is received by the light-receiving unit and synthesized based on the light-receiving signal of the light-receiving unit and the film-formation A mask inspection method comprising: a second detection step of detecting a deformation defect of the film forming mask based on an interference fringe image of the monochromatic light generated between the mask and the mask. A film forming process for forming a functional layer constituting an organic EL element in the film forming region of the film forming substrate by superimposing a film forming mask having an opening corresponding to the film forming region and the film forming substrate. A method of manufacturing an organic EL device having
The mask inspection method according to any one of claims 9 to 15, further comprising a mask inspection step of inspecting the film formation mask at least before and after the film formation step. Manufacturing method of organic EL device. The film forming step forms the functional layer in the film forming region of the film formation substrate by evaporating a film forming material in the first chamber,
The method of manufacturing an organic EL device according to claim 16, wherein the mask inspection step is performed under reduced pressure in a second chamber communicating with the first chamber.

Images