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JP2010199528A - ボンディングワイヤ - Google Patents

ボンディングワイヤ

Info

Publication number
JP2010199528A
JP2010199528A JP2009094065A JP2009094065A JP2010199528A JP 2010199528 A JP2010199528 A JP 2010199528A JP 2009094065 A JP2009094065 A JP 2009094065A JP 2009094065 A JP2009094065 A JP 2009094065A JP 2010199528 A JP2010199528 A JP 2010199528A
Authority
JP
Japan
Prior art keywords
wire
coating layer
bonding
copper
bonding wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009094065A
Other languages
English (en)
Other versions
JP2010199528A5 (ja
Inventor
Takeshi Hasegawa
剛 長谷川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tatsuta System Electronics Co Ltd
Original Assignee
Tatsuta System Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tatsuta System Electronics Co Ltd filed Critical Tatsuta System Electronics Co Ltd
Priority to JP2009094065A priority Critical patent/JP2010199528A/ja
Priority to PCT/JP2009/065735 priority patent/WO2010087053A1/ja
Priority to TW099102279A priority patent/TW201037777A/zh
Publication of JP2010199528A publication Critical patent/JP2010199528A/ja
Publication of JP2010199528A5 publication Critical patent/JP2010199528A5/ja
Pending legal-status Critical Current

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Abstract

【課題】作業ステージ温度：１５０℃程の低温度においても、作業の高速化に伴う接合強度の向上を図る。
【解決手段】集積回路素子の電極ａと回路配線基板の導体配線ｃをボールボンディング法によって接続するためのボンディングワイヤＰである。９９．９９質量％以上の銅からなる芯材１の外周全面に金、白金、パラジウム、銀の１種以上からなる被覆層２を形成し、その被覆線に拡散熱処理を施して芯材１と被覆層２の密着性を高めた後、線径Ｌ：１２μｍ以上５０．８μｍ以下まで伸線し、さらに、引張伸びが８％以上となるように調質熱処理を行って、前記被覆層２の厚み０．０４〜０．０９μｍのボンディングワイヤとする。この構成のボンディングワイヤは、電極と導体配線に十分な接合強度をもって接続され、低温度の高速作業の下でも、その作業がストップすることがない。
【選択図】図２

Description

この発明は、ＩＣ、ＬＳＩ、トランジスタ等の集積回路素子上の電極と、リードフレーム、セラミック基板、プリント基板等の回路配線基板の導体配線とをボールボンディング法によって接続するためのボンディングワイヤ及びその製造方法に関するものである。
この種のボールボンディング法による接続方法は、図１（ａ）〜（ｈ）に示す態様が一般的であり、同図（ａ）に示す、ワイヤＰがキャピラリー１０ａに挿通されてその先端にボール（ＦＡＢ：Ｆｒｅｅ Ａｉｒ Ｂａｌｌ）ｂが形成された状態から、クランプ１０ｂが開いて、キャピラリー１０ａが集積回路素子上の電極ａに向かって降下する。このとき、ボール（ＦＡＢ）ｂはキャピラリー１０ａ内に捕捉され、キャピラリー１０ａの中心にボンディングされる。
ターゲットである電極ａにボールｂが接触すると（キャピラリー１０ａが電極ａに至ると）キャピラリー１０ａがボールｂをグリップし、ボールｂに熱・加重・超音波を与え、それによってボールｂと電極ａが固相接合され、１ｓｔボンドが形成されて電極ａと接着する（図１（ｂ））。
１ｓｔボンドが形成されれば、キャピラリー１０ａは、一定高さまで上昇した後（同図（ｃ））、導体配線ｃの真上まで移動する（同図（ｄ）〜（ｅ））。このとき、安定したループを形成するため、キャピラリー１０ａに特殊な動きをさせてワイヤＰに「くせ」を付ける動作をする場合がある（同図（ｄ）の鎖線から実線参照）。
導体配線ｃの真上に至ったキャピラリー１０ａは、導体配線ｃに向かって降下し、ワイヤＰを導体配線（２ｎｄターゲット）ｃに押付ける（同図（ｅ）〜（ｆ））。これと同時に、その押付け部位に熱・加重・超音波を与え、それによってワイヤＰを変形させ、ワイヤＰを導体配線ｃ上に接合させるためのステッチボンドと、次のステップでテイルを確保するテイルボンドを形成する（図１（ｆ））。
その両ボンドを形成した後、キャピラリー１０ａはワイヤＰを残したまま上昇し、キャピラリー１０ａの先端に一定の長さのテイルを確保した後、クランプ１０ｂを閉じて（ワイヤＰをつかんで）、テイルボンドの部分からワイヤＰを引きちぎる（図１（ｇ））。このとき、テイルボンドがワイヤＰを仮止めしているため、テイルボンドをなすワイヤＰはキャピラリー１０ａと一緒に上昇しない。
キャピラリー１０ａは、所要の高さまで上昇すると停止し、そのキャピラリー１０ａの先端に確保されたワイヤＰの先端部分に、放電棒ｇでもって高電圧を掛けて火花を飛ばし（放電し）、その熱でワイヤＰを溶かし、この溶けたワイヤ素材は表面張力によって球状に近いボールｂになって固まる（図１（ｈ））。
以上の作用で一サイクルが終了し、以後、同様な作用によって、電極ａと導体配線ｃのボールボンディング法による接続がされる。
このボールボンディング法による接続において、ボンディングワイヤＰには、金線が主に使用されるが、金は高価であるため、近年、銅純度９９．９９質量％以上の安価な銅線を使用することが行われている。そのとき、銅は裸のままでは、表面の酸化が起こり易いことから、図２に示すように、銅線からなる芯材１に耐酸化金属２を被覆したものが使用されている。
その被覆金属（被覆層）２としては、金（Ａｕ）、白金（Ｐｔ）、パラジウム（Ｐｄ）、銀（Ａｇ）、ニッケル（Ｎｉ）等が採用されている（特許文献１〜３）。
特開２００３−１３３３６１号公報 特開２００４−６４０３３号公報 特開２００７−１２７７６号公報
この金属被覆の銅線からなるボンディングワイヤＰにおいて、近年の電子部品の小型化等による集積回路素子間の極小化に伴い、上記ボールｂもより小さくする必要から、ボンディングワイヤＰにも小径のものが望まれ、そのためには、その径Ｌを５０μｍ以下とするのが好ましいとされている（特許文献１段落０００９第１２〜１４行）。
また、集積回路素子の電極ａへの接続において、ボールｂが下向き槍状（逆円錐状）になっていると、上記ボールｂの電極ａへの押付け時、そのボールｂの尖鋭端によって電極ａを損傷させる恐れがあるため、ボールｂはできるだけ、真球であることが好ましい。そのボールｂの真球度を高めるために、上記被覆層２の厚みｔを芯線径の０．００１以下としたり（特許文献１請求項１）、同じく被覆層２の厚みｔを０．００１〜０．２μｍとしたり（特許文献３請求項１）、芯材１の銅よりも高融点の耐酸化金属で被覆層２を形成したりしている（特許文献２段落００１４）。
さらに、有機基板をベースにしたＢＧＡ(Ｂａｌｌ Ｇｒｉｄ Ａｒｒａｙ)などでは加熱温度(ステージ温度)を高くすると、反りが発生してボンディング性が著しく悪化する。このため、上記ワイヤＰと電極ａ又は導体配線ｃとの接合時の加熱温度（ステージ温度）を低く、例えば、１５０℃程度にしても、十分な接合強度を担保するための種々の工夫、例えば、熱処理後に伸線する加工等もされている（特許文献３段落００２０、同００５４等）。
以上のように、耐酸化金属で銅線を被覆したボンディングワイヤＰは、従来から、種々の工夫がなされてそれなりに好評を得ているが、近年の低コスト化に基づく、作業の高速化に伴う接合強度の向上がさらに要求されている。
この発明はその要求に応えることを課題とする。
上記課題を達成するために、この発明は、上記の各工夫を全て採用して、ボンディングワイヤＰの線径Ｌは、１２μｍ以上５０．８μｍ以下とし、純度９９．９９質量％以上の銅からなる芯材１の外周全面に、金、白金、パラジウム、銀の１種以上による厚みｔ：０．０２〜０．０９μｍの被覆層２を形成したものとしたのである。
ボンディングワイヤＰの線径Ｌを、５０．８μｍ以下としたのは、上述の特許文献１ではその径Ｌを５０μｍ以下としているが、５０．８μｍ以下であれば、５０μｍ以下とかわらない程度でもって、上記ボールｂをより小さくできるからである。
また、線径Ｌの下限を１２μｍ以上としたのは、１２μｍ未満ではボンディング前にオペレータがワイヤＰをキャピラリー１０ａに通すのが困難になり、作業性が悪くなるからである。
芯材１の銅純度を９９．９９質量％以上としたのは、銅の高導電性を担保するためである。
被覆層２の厚みｔは薄いほど、ボールｂの硬度が低くなり、Ｓｉチップ（電極ａ）の損傷の可能性が低くなるが、薄すぎると、ステッチボンド接合の際に芯材１の銅が露出する度合いが大きくなり、被覆層２を有さない銅ワイヤ程度のステッチボンド接合性しか発現できない。例えば、後記実施例と比較例の実験結果から理解できるように、２回以上のマシンストップが生じる恐れがある。このため、その実施例と比較例の実験結果から、被覆層２の厚みｔは０．０２μｍ以上とする。
なお、ステージ温度：１５０℃程の低温度でのボールボンディングの時には、連続ボンディング性の実験結果からその厚みｔを０．０４μｍ以上、より好ましくは、その０．０４μｍを越えるものとする。ステージ温度を低くすると、ステッチボンド接合に要する加重が大きくなり、被覆層２の厚みｔが０．０２μｍ以上から０．０４μｍ未満の範囲では芯材の銅が露出する度合いが大きくなり、連続ボンディング性が損なわれることがあるからである。
一方、被覆層２が厚いと、ボールｂの硬度が高くなり、Ｓｉチップ（電極ａ）の損傷の可能性が高くなる。このため、後記実施例と比較例の実験結果から、被覆層２の厚みｔは０．０９μｍ以下とする。
被覆金属を金、白金、パラジウム及び銀としたのは、これらの貴金属が電子材料の被覆材として一般的であり、入手が比較的に容易であるからである。これらの純度も芯材１の銅と同様に９９．９９質量％以上とすることが好ましい。被覆層２はこれらの貴金属の1
つで形成しても良いが、２種以上の金属の多層とすることもできる。
以上から、このボンディングワイヤＰの構成としては、集積回路素子の電極ａと回路配線基板の導体配線ｃをボールボンディング法によって接続するための線径Ｌ：１２μｍ以上５０．８μｍ以下のボンディングワイヤＰにおいて、芯材１が純度９９．９９質量％以上の銅からなり、その芯材１の外周全面に、金、白金、パラジウム、銀の１種以上による厚み０．０２〜０．０９μｍの被覆層２を形成した構成を採用する。
この構成において、ステージ温度：１５０℃程の低温度でのボールボンディング用ボンディングワイヤにおいては、その被覆層の厚みｔは０．０４〜０．０９μｍとする。
これらの構成のボンディングワイヤＰの製造方法には種々のものが採用できるが、例えば、純度９９．９９質量％以上の銅からなる芯材１の外周全面に、金、白金、パラジウム、銀の１種以上による被覆層２を形成し、その被覆線を拡散熱処理して芯材と被覆層の密着性を高めた後、線径１２μｍ以上５０．８μｍ以下まで伸線し、さらに、引張伸びが８％以上となるように調質熱処理を行って、被覆層２の厚みｔ０．０２〜０．０９μｍとした構成を採用できる。
これらの構成において、上記被覆層２をその融点が上記銅の融点より高いパラジウム又は白金がより好ましいと考えることができる。
上述のように、芯材１の銅よりも高融点の耐酸化金属で被覆層２を形成すれば、ボールｂの真球度が増すことが確認されているが、本発明者は、その理由として、放電によって銅が溶融して真球となる時、その溶融部分が表面張力によって真上にワイヤを這い上がっていくが、被覆層２も溶融していると、その這い上がりが悪くなって、真球になりにくいためと考えた。このことは、０．０２〜０．０９μｍ厚の被覆層２であると、顕著に表れる。
また、パラジウムと白金では、パラジウムの方がボールｂを真球にできる条件のマージン（限界）が広くなる。これは、パラジウムの融点が白金の融点に比べて銅の融点に近いためと考えられる。すなわち、被覆層２に白金を用いると、放電による銅の溶融後に白金が溶融するまでに時間差が生じるためである。被覆層２にパラジウムを用いれば、溶融の時間差は小さくなるため、より真球になりやすい。
因みに、上記純銅の融点：１０８３℃、金の融点：１０６４℃、パラジウムの融点：１５５４℃、銀の融点：９６２℃、白金の融点：１７７２℃である。
また、被覆層２の厚みｔを０．０４μｍ以上とした場合、ステージ温度１５０℃でもマシントラブルが少なくなるが、特にパラジウムを被覆層２に採用し、被覆層２の厚みｔを０．０５μｍ以上とした時にはステージ温度をより低温の１３５℃としたときでもマシントラブルが起こらないことも確認されている。これは、パラジウム被覆層２の場合、上記のように、銅とパラジウムの溶融時間差が小さく、より真球になりやすいこととの相乗効果に基づくものと考える。
さらに、上記芯材の銅純度を９９．９９９質量％以上とすれば、後記実施例と比較例の実験結果から理解できるように、Ｓｉチップ（電極ａ）の損傷の可能性が低くなる。これは、銅純度を９９．９９９質量％以上とすることで、ＦＡＢ硬度をより低減できるからである。
さらに、被覆層２は、電解メッキ、無電解メッキ、蒸着法等の周知の手段によって形成され、一般に、ワイヤＰは大きな線径の銅ロッドをダイスと呼ばれるツールに順次貫通させていくことにより、所定の線径に仕上げられるため、この工程途中の適宜な線径で被覆層２を上記手段により形成する。このとき、被覆する際の芯材１の線径は作業性・コストにより決定されるが、製造装置の制限から０．２〜０．８ｍｍが一般的である。外周全面にパラジウム等の金属を被覆された被覆線は２００〜５００℃（被覆線の温度）で拡散熱処理を施して前記芯材１と被覆層２の密着性を高めた後、線径１２μｍ以上５０．８μｍ以下まで伸線し、さらに、引張伸びが８％以上となるように調質熱処理を行って、被覆層２の厚みｔ０．０２〜０．０９μｍとすることができる。
引張伸びを８％以上とするのは、ステッチボンド接合性を上げ、より安定したボンディング性を得るためである。
このとき、被覆層がパラジウムから成れば、芯材の銅純度を９９．９９９質量％以上とし、その被覆層の厚みｔを０．０５〜０．０９μｍとすることができる。
この発明は、以上のようにしたので、安定した接合強度を有する純銅に貴金属を被覆したボンディングワイヤを得ることができる。
ボールボンディング接続法の説明図であり、（ａ）〜（ｈ）はその途中図 この発明に係るボンディングワイヤの断面図 オージェピーク強度と被覆層（メッキ層）深さの関係図
表１に示す実施例１〜４５及び比較例１〜１３を製作し、そのボンディングワイヤＰの１ｓｔ接合部のＳｉチップ（電極ａ）の損傷度合、及び連続ボンディング性の試験を行った。
すなわち、まず、銅純度９９．９９質量％の純銅（表１中：４Ｎ）と銅純度９９．９９９質量％の純銅（表１中：５Ｎ）の０．２〜０．８ｍｍ径の銅線を用意し、その銅線に、Ａｕ、Ｐｄ、Ｐｔ及びＡｇの貴金属を電解メッキ法によって被覆し、その被覆線を巻き戻し、焼鈍炉を通したのち、再び巻き取り用リールで巻き取ることによって連続拡散熱処理を行った。焼鈍炉は炉長１ｍの炉芯管を有する電気炉を用い、炉芯管には窒素ガスを流した。その炉温度は５００℃以上８００℃以下として被覆線の温度を２００〜５００℃とし、その被覆線の走行速度は５〜６０ｍ/分とした。以上の拡散熱処理を施して銅線（芯材）１と被覆層２の密着性を高めた後、線径１５〜５０．８μｍまで伸線し、さらに、引張伸びが８％以上となるように調質熱処理を行って、被覆層２の厚みｔ：０．００１〜０．１１２μｍのボンディングワイヤＰ（実施例１〜４５及び比較例１〜１３）を得た。表１中、２種の貴金属を示す例は、その２種の金属を同一厚で２重被覆したものである。
つぎに、この各ボンディングワイヤＰにおいて、下記の評価を行った結果を表１に示す。

「被覆層（表面皮膜層）２の厚み」：
オージェ電子分光分析法にて測定した。Ａｒで被覆層の表面からスパッタリングし、単位時間のスパッタリング毎にスペクトル測定を行った。深さ方向の単位はスパッタ時間とし、事前に測定しておいた標準試料ＳｉＯ２のスパッタリングレートから、対象材の深さ方向の距離をＳｉＯ２換算にて算出した。被覆層については、図３の通り、対象被覆層元素のオージェピーク強度を縦軸、深さを横軸にとったグラフにおいて、オージェピーク強度が８４％の位置から１６％の位置までの距離を被覆層の厚みとした。

「芯材（銅）の純度」：
ＧＤＭＳ(グロー放電質量)分析にて全元素の濃度を測定してＣｕ純度を決定した。

「連続ボンディング性」（１）：
ボンディングマシンで１０，０００回の連続ボンディングを行い、マシンストップが発生しなければ「Ａ」、１回のマシンストップが発生すれば「Ｂ」、２回以上のマシンストップが起これば「Ｄ」とした。このとき、ステージ温度が低くなれば、その連続ボンディングが困難になることから、２００℃(±５℃)、１５０℃(±５℃)の２水準で行った。

「１ｓｔ接合部のＳｉチップ損傷」（２）：
ボンディング後、１ｓｔボール接合部直下のＳｉチップ損傷を評価するために、ボール接合部ａおよび電極膜を王水で溶解し、Ｓｉチップのクラックを光顕とＳＥＭで観察した。このとき、100個の接合部を観察して５μｍ以下の微小なピットが１個もしくはまったく見られない場合は「Ａ」、５μｍ以下の微小なピットが２個以上認められる場合は実用上は有害でないため「Ｂ」、５μｍ以上のクラックが認められた場合は「Ｄ」とした。

「総合評価」：
（１）の評価が２００℃・１５０℃ともにＡであり、かつ（２）の評価がＡのものを「Ａ」、（１）の評価が２００℃・１５０℃ともにＡであり、かつ（２）の評価がＢのものを「Ｂ」、（１）の評価が２００℃ではＡであり、１５０℃ではＢのものを「Ｃ」とした。また、ひとつでもＤのあるものについては実用上問題であるので「Ｄ」とした。
Figure 2010199528
この試験結果から、被覆層厚ｔが０．０２μｍ未満であると、２００℃及び１５０℃の両連続ボンディング性が低下し（比較例１、２、４、５、９、１０、１２）、０．０２μｍに近くなると、前者の連続ボンディング性が満足できるものとなり（比較例２）、０．０２μｍ以上となると、両者の連続ボンディング性が満足できるものとなることが理解できる（実施例１〜４５、比較例３、６〜８、１１、１３）。
一方、被覆層厚ｔが０．０９μｍを越えると、ボールｂが硬くなって、Ｓｉチップ（電極ａ）の損傷が認められるようになる（比較例３、６〜８、１１、１３）。
また、純銅５Ｎを使用し、被覆層厚ｔを０．０４μｍ以上としたもの（実施例５、１２、１３、１６、２０、２７、３２、３４、３７、４４、４５）では、総合評価が「Ａ」となって、ステージ温度が１５０℃程の低温度においても、連続ボンディング性が良好であってその連続ボンディング性の担保に有効であることが分る。特に、被覆層厚ｔが０．０５μｍ以上では顕著である（実施例１２、１３、１６）。
Ｐ ボンディングワイヤ
１ 芯材
２ 被覆層
ａ 集積回路素子の電極
ｂ ボンディングボール
ｃ 回路配線基板の導体配線

Claims (7)

  1. 集積回路素子の電極（ａ）と回路配線基板の導体配線（ｃ）をボールボンディング法によって接続するための線径（Ｌ）１２μｍ以上５０.８μｍ以下のボンディングワイヤ（Ｐ）であって
    、芯材（１）が純度９９．９９質量％以上の銅からなり、その芯材（１）の外周全面に、金、白金、パラジウム、銀の１種以上による厚み（ｔ）０．０２〜０．０９μｍの被覆層（２）を形成したことを特徴とするボンディングワイヤ。
  2. 上記被覆層（２）の厚み（ｔ）が０．０４〜０．０９μｍであることを特徴とする請求項１に記載のボンディングワイヤ。
  3. 上記被覆層（２）をその融点が上記銅の融点より高いパラジウム又は白金としたことを特徴とする請求項１又は２に記載のボンディングワイヤ。
  4. 上記被覆層（２）をその融点が上記銅の融点より高いパラジウムとし、その厚み（ｔ）が０．０５〜０．０９μｍであることを特徴とする請求項１に記載のボンディングワイヤ。
  5. 上記芯材（１）の銅純度を９９．９９９質量％以上としたことを特徴とする請求項１〜４の何れか１つに記載のボンディングワイヤ。
  6. 集積回路素子の電極（ａ）と回路配線基板の導体配線（ｃ）をボールボンディング法によって接続するための請求項１〜４の何れか１つに記載のボンディングワイヤ（Ｐ）の製造方法であって、純度９９．９９質量％以上の銅からなる芯材（１）の外周全面に、金、白金、パラジウム、銀の１種以上による被覆層（２）を形成し、その被覆線を拡散熱処理して前記芯材（１）と被覆層（２）の密着性を高めた後、線径（Ｌ）１２μｍ以上５０．８μｍ以下まで伸線し、さらに、引張伸びが８％以上となるように調質熱処理を行ったことを特徴とするボンディングワイヤの製造方法。
  7. 上記芯材（１）の銅純度を９９．９９９質量％以上とし、上記被覆層（２）がパラジウムから成ってその厚み（ｔ）を０．０５〜０．０９μｍとしたことを特徴とする請求項６に記載のボンディングワイヤの製造方法。
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