JP2010087266A - Composite substrate, and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a composite substrate achieving sufficient dimensional accuracy, yield and process efficiency. <P>SOLUTION: This method of manufacturing a composite substrate includes processes of: preparing a structure 250 including a composite body 100 including first conductive members and a ceramic substrate, a resin member 240 for embedding the composite body 100 therein, and a second conductive member 222 arranged on one side of the resin member 240; forming holes 180 reaching the second conductive member 222 via the first conductive members from the other side of the resin member 240; and forming third conductive members 300, in the holes 180, for connecting the first conductive members 110 to the second conductive member 222. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a composite substrate and a manufacturing method thereof.

  Conventionally, electronic devices such as active components of semiconductor devices, passive components such as filters, resistors and capacitors, and chip components thereof have been increasingly reduced in size and weight, and wiring boards on which these are mounted, Modules, package parts, and the like are also desired to be further reduced in size and weight by high-density mounting. In response to such a demand, a composite substrate that can realize high-density wiring and can be thinned and reduced in height has been studied.

On the other hand, when the composite substrate becomes thinner and lower in profile, warpage, distortion, cracks, etc. of the composite substrate are likely to occur due to external loads and thermal history in the manufacturing process and use process. . Therefore, in recent years, a composite substrate in which warpage and distortion are suppressed by arranging a ceramic substrate as a core material has been proposed. For example, in Patent Document 1, a wiring including a ceramic core substrate, an IC chip accommodated in the ceramic core substrate without a gap through a filler, and a resin insulating layer formed on at least one side of the ceramic core substrate. A substrate has been proposed. According to Patent Document 1, the wiring board having the above-described configuration is hardly deformed by heat.
JP 2003-309213 A

  In the method of manufacturing a wiring board described in Patent Document 1, as shown in FIG. 4 and the description in the corresponding specification, the main surface side of the ceramic core substrate 411 provided with a number of through-hole conductors 418 is provided. After forming the resin insulating layer 423 having the via hole 423H on the back surface and the resin insulating layer 423 having the via hole 421H on the back surface side, the via conductor 435 is formed in the via hole 423H and the via conductor 431 is formed in the via hole 421H. Terminals 473 and 405 are connected to the conductor layers 416 and 417 of the ceramic core substrate 411 through the via conductors 435 and 431. When forming a resin insulation layer having via holes on both sides of the ceramic core substrate in this way, for example, the ceramic core substrate and one resin insulation layer are fixed to the support while being fixed on the support. After forming a via hole in the non-resin insulating layer to obtain an intermediate laminate, the intermediate laminate is peeled from the support, and a via hole is formed in the peeled resin insulating layer. However, if a via hole is formed after the intermediate laminate is peeled from the support, a load is applied to the intermediate laminate at the time of peeling, causing warping and distortion, and the via hole is formed in that state. No more.

  Therefore, the present invention has been made in view of the above circumstances, and a composite substrate manufacturing method that realizes sufficient dimensional accuracy, yield, and process efficiency, and a composite that can be manufactured with sufficient dimensional accuracy, yield, and process efficiency. An object is to provide a substrate.

  As a result of intensive studies to achieve the above object, the present inventors have found a method for connecting the conductive members separated from each other in the stacking direction on the support, and the present method. The invention has been completed.

  That is, the method for manufacturing a composite substrate according to the present invention includes a composite including a first conductive member and a ceramic substrate, a resin member in which the composite is embedded, and a second conductive provided on one side of the resin member. A step of preparing a structure containing a member, a step of forming a hole reaching the second conductive member from the other side of the resin member via the first conductive member, and a first in the hole Forming a third conductive member that connects the first conductive member and the second conductive member.

  According to the composite substrate manufacturing method of the present invention, in order to connect the first conductive member and the second conductive member, first, the second conductive member of the resin member is provided from the side opposite to the second conductive member. A hole reaching the conductive member is formed. At this time, a hole is formed so as to pass through the first conductive member. Thereby, a part of 1st conductive member and 2nd conductive member is exposed in a hole. Then, the third conductive member is introduced into the hole from the opening of the hole. At this time, the third conductive member is formed so as to be joined to the first conductive member and the second conductive member exposed in the hole, and the connection between the first conductive member and the second conductive member is established. Secure. As described above, since the second conductive member is connected to the first conductive member embedded in the inner layer, the second conductive member can be connected without drilling from the second conductive member side. Even if it is supported on the support, these conductive members can be connected without peeling the structure from the support. Therefore, it is possible to sufficiently suppress the occurrence of dimensional deviation due to distortion or warpage that may occur when the structure is peeled from the support, which makes it difficult to connect the conductive members. Further, since the connection between the first conductive member and the second conductive member is ensured after the structure is prepared, the exact alignment required for connecting them in advance is performed when the structure is manufactured. There is no need. As a result, the composite substrate manufacturing method according to the present invention can achieve sufficient dimensional accuracy, yield, and process efficiency.

  In the method for manufacturing a composite substrate according to the present invention, the ceramic substrate has a through hole in its thickness direction, the first conductive member has a closing portion that closes at least a part of the through hole, and the hole is formed In the step of forming a hole in the through hole so as to pass through the blocking portion and forming the third conductive member, the third conductive member is preferably joined to the blocking portion of the first conductive member. This eliminates the need to form a through hole in the ceramic substrate in a state where the first composite is provided on the support, thereby making it easier to form a hole reaching the second conductive member.

  A composite substrate according to the present invention includes a composite including a first conductive member and a ceramic substrate, a resin member embedding the composite, a second conductive member provided on one side of the resin member, and the resin member. The first conductive member and the second conductive member are connected to the inner wall of the hole reaching the second conductive member from the opposite side of the second conductive member via the first conductive member. A substrate containing a third conductive member connected and penetrating the first conductive member. This composite substrate can be manufactured by the above-described method for manufacturing a composite substrate according to the present invention. Therefore, the composite substrate of the present invention can be manufactured with sufficient dimensional accuracy, yield, and process efficiency. In the composite substrate of the present invention, the third conductive member is a portion that is provided through the first conductive member, is joined to the first conductive member on the side surface thereof, and protrudes from the first conductive member. Join the inner wall of the hole. Thereby, compared with the case where the third conductive member is bonded to the first conductive member only at the end face thereof, the bonding strength thereof is further increased, and the third conductive member is held more firmly in the hole. Therefore, the connection reliability in the composite substrate is further improved.

  In the composite substrate according to the present invention, it is preferable that the first conductive member has a wiring layer inside the ceramic substrate. Accordingly, between the first conductive member and another wiring member that is provided in the same layer of the second conductive member and is not connected to the first conductive member, that is, between members having different potentials when a voltage is applied thereto. Even if the thickness of the resin existing in the substrate is reduced, the insulation between them can be more easily ensured. If the thickness of this resin can be reduced, further thinning of the composite substrate can be realized. In addition, when the distance between the first conductive member and the other wiring member is equal, the thickness of the resin is reduced while the thickness of the ceramic substrate is increased, so that the rigidity and mechanical strength of the composite substrate are improved. Warpage and distortion are further suppressed.

  The method for producing a composite according to the present invention includes a step of filling a material that is not sintered at a firing temperature of a base material into the through hole of a green sheet made of a base material of a ceramic substrate having a through hole in a thickness direction, and sintering. Forming a conductive layer so as to cover at least a part of the material not to be laminated to obtain a laminate, firing the laminate at the firing temperature of the base material, and removing the non-sintered material from the fired laminate The method which has a process to do.

  According to this method for producing a composite, a composite containing a ceramic substrate provided with a through hole and a conductive layer covering at least a part of the opening of the through hole can be formed. If the green sheet is fired without filling any through holes, the through holes are deformed or become clogged with ceramics when the green sheet is sintered. Even if the through hole is filled with a material to be sintered at the sintering temperature of the base material and fired, the through hole is deformed as the material is sintered. On the other hand, in the method for producing a composite according to the present invention, a material that is not sintered at the sintering temperature of the base material is filled in the through-holes and fired, so that the deformation of the through-holes is suppressed and the composite has sufficiently excellent dimensional accuracy Can be obtained. Furthermore, by filling the through hole with the material that is not sintered, it is possible to form a conductive layer that closes at least a part of the opening of the through hole, which has been difficult to form. The non-sintered material is not sintered and is not joined to the ceramic substrate, and therefore can be easily removed after firing. The obtained composite can be suitably used as the first composite in the method for producing a composite substrate of the present invention.

  According to the present invention, it is possible to provide a composite substrate manufacturing method that realizes sufficient dimensional accuracy, yield, and process efficiency, and a composite substrate that can be manufactured with sufficient dimensional accuracy, yield, and process efficiency.

  Hereinafter, the best mode for carrying out the present invention (hereinafter simply referred to as “the present embodiment”) will be described in detail with reference to the drawings as necessary. In the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted. Further, the positional relationship such as up, down, left and right is based on the positional relationship shown in the drawings unless otherwise specified. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios.

  1 and 2 are schematic process diagrams showing a method for manufacturing a composite substrate of the present embodiment, and show cross sections of members used in the manufacturing method. First, in the first step shown in FIG. 1A, a ceramic wiring board 100, which is a first composite including the first conductive member 110 and the ceramic substrate 120, is prepared. The ceramic substrate 120 is made of an insulating ceramic material body, and has a large through hole 120a and a small through hole 120b penetrating in the thickness direction. The thickness of the ceramic substrate 120 is, for example, 20 to 1000 μm. The first conductive member 110 has conductivity, and a via portion 110 a provided penetrating in the thickness direction of the ceramic substrate 120, and a wiring layer 110 b provided on one main surface of the ceramic substrate 120 including. The wiring layer 110b has a plane pattern of a predetermined shape, and a part thereof covers and closes the opening of the through hole 120b of the ceramic substrate 120. The via portion 110 a is integrated with the wiring layer 110 b on the lower main surface of the ceramic substrate 120, and has a land 110 d slightly protruding upward from the upper main surface of the ceramic substrate 120. Since the manufacturing method of the ceramic wiring board 100 will be described in detail later, description thereof is omitted here.

  The material of the ceramic substrate 120 is not particularly limited, but is preferably a low temperature fired (LTCC) substrate made of glass ceramic that can be fired at a low temperature of 1000 ° C. or lower. Examples of the conductive material constituting the first conductive member 110 include metals such as silver (Ag), palladium (Pd), gold (Au), copper (Cu), platinum (Pt), and nickel (Ni). It is done. These may be used alone or in the form of an alloy by mixing two or more.

  Further, in the second step shown in FIG. 1B, a second composite including a support 210, a conductive layer 222 which is a second conductive member provided on the support 210, and a resin layer 224. A laminated body 200 including the body 220 is prepared. In this laminated body 200, for example, a second composite body 220 and a support body 210 are prepared, and the second composite body 220 is pasted on the surface of the support body 210 via, for example, a heat release sheet. Formed with.

  The support 210 has a thickness of, for example, 200 μm or more so as not to be distorted or damaged when the composite substrate is manufactured. Since it is necessary to peel off the structure 250 formed thereon from the support 210 in a later step, it is preferable that the support 210 can be peeled well from the conductive layer 222. Examples of the material of the support 210 include a resin film such as polyethylene terephthalate, an inorganic material plate such as glass and ceramic, a metal foil such as copper foil, nickel, and stainless steel, and a metal plate. Among these, a ceramic plate and a metal plate are preferable from the viewpoint of hardly causing shrinkage when heated in a process described later and further improving the dimensional accuracy.

  The second composite 220 is formed by laminating a conductive layer 222 and a resin layer 224. For example, a resin film with metal foil can be used. Examples of the conductive layer 222 include metal foil such as copper foil, nickel foil, and stainless steel foil. In these, the copper foil which is hard to be perforated with the laser used at a post process is preferable. In this case, the conductive layer 222 may be a simple metal foil, or a pattern in which a wiring pattern, a land, or an alignment mark is formed. The resin layer 224 may be a resin material that can be molded into a sheet shape, a film shape, or the like. Examples of such resin materials include thermoplastic resins and thermosetting resins. More specifically, epoxy resins, phenol resins, vinyl benzyl ether compound resins, bismaleimide triazine resins, cyanate ester resins, Examples thereof include polyimide, polyolefin resin, polyester, polyphenylene oxide, liquid crystal polymer, silicone resin, and fluorine resin, and these are used singly or in combination of two or more. Moreover, the resin material may be a rubber material such as acrylic rubber or ethylene acrylic rubber, or a resin material partially including a rubber component. Inorganic materials such as ceramic particles and glass fibers may be contained in the resin material. The thickness of the conductive layer 222 is, for example, 1.5 to 35 μm, and the thickness of the resin layer 224 is, for example, 5 to 40 μm. When the 2nd composite 220 is a resin film with a metal foil, the 2nd composite 220 can be produced with the manufacturing method of a well-known resin film with a metal foil.

  The method of attaching the second composite 220 to the support 210 is not particularly limited as long as it is a method capable of peeling the structure 250 formed thereon from the support 210 in a later step. It is also possible to use a known method such as a method of interposing and attaching between the two.

  Next, in the third step shown in FIG. 1 (c), the ceramic wiring board 100 is laminated on the opposite side of the laminated body 200 from the support 210, and the chip component 150 is disposed in the through hole 120a. Secure on layer 224. At this time, an alignment mark may be provided on the conductor layer 222 as a positioning reference. The chip component 150 has a bump electrode 152 formed on the electrode formation surface 150 a thereof, and the electrode formation surface 150 a faces away from the support 210. The form of the chip component 150 is not particularly limited. For example, when the chip component 150 is an active component such as a semiconductor component, it is preferably a semiconductor bare chip from the viewpoint of further reducing the height of the composite substrate. Alternatively, the chip component 150 may be a passive component. Examples of a method for fixing the chip component 150 onto the resin layer 224 include a method using pressure bonding and an adhesive. In the third step, since the conductive layer 222 in the second composite 220 is not yet patterned, it is not necessary to perform precise alignment when the ceramic wiring board 100 is laminated.

  Subsequently, in the fourth step shown in FIG. 1D, the ceramic wiring board 100 and the chip component 150 are embedded by the embedding resin member 162. The method of embedding with the embedding resin member 162 is not particularly limited. For example, an uncured or semi-cured resin paste is applied on the ceramic wiring board 100 and the chip component 150 and then cured. The resin paste is, for example, a slurry obtained by mixing a resin powder and an organic vehicle. From the viewpoint of easily integrating the resin layer 224 and the embedding resin member 162, the resin powder preferably contains the resin material constituting the resin layer 224, and has the same composition as the resin material. More preferred. When a thermosetting resin is used as the resin, a semi-cured state is obtained by performing a heat treatment.

  In order to cure the resin paste after application, when the resin material in the resin paste is a thermosetting resin, it may be heated. Prior to this heat treatment, the applied resin paste may be flattened by lamination and / or pressing. Alternatively, after the heating, for example, the surface of the embedding resin member 162 may be ground by using a grinder or the like to perform the flattening process.

  Next, a metal layer 164 is formed on the surface of the embedding resin member 162. The method for forming the metal layer 164 is not particularly limited. For example, a metal material is formed on the entire surface of the embedding resin member 162 by electroless plating, patterned by photolithography and etching, and further subjected to electrolytic plating. Thus, the metal layer 164 may be formed. Alternatively, a metal foil may be attached to the embedding resin member 162 as the metal layer 164.

Alternatively, after a sheet in which the layer made of the embedding resin member 162 and the metal layer 164 are laminated is formed in advance, the sheet is laminated on the structure obtained through the third step and heated as necessary. However, the ceramic wiring board 100 and the chip component 150 may be embedded by the embedding resin member 162 by applying pressure in the stacking direction. In this case, it is preferable to adjust the pressing conditions so that the surface of the metal layer 164 becomes flat.
The metal material which comprises the metal layer 164 will not be specifically limited if it reflects the below-mentioned laser, For example, copper (Cu) is mentioned.

  Next, in a fifth step shown in FIG. 2A, the metal layer 164 is patterned into a desired shape to obtain the laser mask layer 170. At this time, in order to pierce the embedding resin member 162 and the wiring layer 110b filled in the small through hole 120b in the sixth step described later, the portion of the metal layer 164 directly above them is removed, The corresponding surface portion 162a of the embedding resin member 162 is exposed in advance. Further, in the sixth step, the hole 182 reaching the bump electrode 152 of the chip component 150 and the hole 184 reaching the via portion 110a of the first conductive member 110 are formed, so that the corresponding resin member 162 for embedding is also handled. The surface portions 162b and 162c to be exposed are exposed in advance. Thereby, since the remaining laser mask layer 170 reflects the laser, a portion where the laser mask layer 170 is not formed can be selectively perforated by the laser. At this time, the position of the metal layer 164 to be removed can be determined by exposing the alignment mark of the conductive layer 222 or by determining the alignment mark provided on the support 210. it can. Thus, the ceramic wiring board 100, the ceramic wiring board 100 embedded in the support 210, the resin member 240 composed of the resin layer 224 and the embedding resin member 162, and the conductive layer 222 provided on one side of the resin member 240. And the structure 250 containing the laser mask layer 170 provided in the other side of the resin member 240 is obtained.

  The patterning method of the metal layer 164 is not particularly limited, and may be a known method. For example, after an etch mask having a predetermined pattern is stacked on the metal layer 164, the metal layer 164 other than the portion where the etch mask is stacked is removed, and the etch mask is further removed to obtain the laser mask layer 170. As a method of removing the metal layer 164 other than the portion where the etch mask is stacked, the structure 250 shown in FIG. 2A is replaced with a chemical solution that dissolves the constituent metal of the metal layer 164 (for example, the metal of the metal layer 164). In the case where the component is silver, it is immersed in a mixed solution of ammonia water and hydrogen peroxide solution, etc., or wet chemical treatment in which a chemical solution is circulated on the structure 250, under conditions that allow selective removal of metal components Physical processing such as ion milling and ashing can be exemplified. As a method for removing the etch mask, for example, blasting can be exemplified.

  Then, in the sixth step shown in FIG. 2B, with respect to the structure 250 obtained through the fifth step, the inside of the small through-hole 120b starts from the surface portion 162a of the embedding resin member 162. A hole 180 is formed which penetrates the filling resin member 162 filled in and reaches the conductive layer 222 via the portion where the wiring layer 110 b is blocked and the resin layer 224. At the same time, holes 182 and 184 reaching the bump electrode 152 and the via portion 110a, respectively, are formed so that the bump electrode 152 of the chip component 150 and the via portion 110a of the first conductive member 110 are exposed. The holes 180 are opened on the laser mask layer 170 side, but are not opened on the conductive layer 222 side. Examples of the drilling method for forming the holes 180, 182, and 184 include drilling using various lasers and drilling using a drill, but a finer hole can be formed and the conductive layer 222 can be drilled. From the viewpoint of suppressing the above, perforation using a laser is preferable.

When drilling with a laser in the sixth step, first, the surface of the resin member 162 for embedding CO ₂ laser or UV-YAG laser to form the portion of the hole 180 that passes through the resin member 162 for embedding and the holes 182 and 184. The portions 162a, 162b, and 162c are irradiated. By using these lasers, it is possible to form finer holes in the embedding resin member 162. The CO ₂ laser usually has an oscillation wavelength of about 10 μm, and in this embodiment, the output may be 150 W or less. In addition, the UV-YAG laser usually has an oscillation wavelength of about 0.355 μm, and in this embodiment, the output may be 5 W or less. Moreover, the laser beam may be continuously irradiated to the site to be perforated, or may be irradiated with a pulse. Furthermore, the output may or may not be changed during laser irradiation.

  When the hole 180 is formed by the perforation, all of the embedding resin member 162 filled in the through hole 120b may be removed, but the embedding resin member is covered so as to cover the ceramic substrate 120 in the through hole 120b. It is preferable to perforate leaving 162 in part. Thereby, since the ceramic substrate 120 is bonded to the embedding resin member 162 not only in the main surface but also in the through hole 120b, the bonding area of the ceramic substrate 120 becomes larger and the mutual adhesion is further strengthened.

When the hole 180 is formed, the above-described CO ₂ laser or UV-YAG laser is used to drill the resin member 162 for embedding in the through hole 120b, and then the UV-YAG laser is used as the laser to block the wiring layer 110b. Irradiate the area to be drilled. By using the UV-YAG laser, the wiring layer 110b can be perforated well even if the first conductive member 110 is made of metal. The UV-YAG laser usually has an oscillation wavelength of about 0.355 μm, and in this embodiment, the output may be 5 W or less. Moreover, the YAG laser may be irradiated continuously to the site to be perforated, or may be irradiated in pulses. Furthermore, the output may or may not be changed during laser irradiation. After laser processing is performed in this manner, smear removal is performed by ashing, blasting, or the like by desmear processing or plasma processing as necessary.

Further, when the portion that closes the wiring layer 110b is penetrated by the perforation, the resin layer 224 is perforated using the CO ₂ laser or the UV-YAG laser again until the conductive layer 222 is reached, thereby completing the hole 180. By using these lasers, finer holes can be formed in the resin layer 224. The irradiation conditions of the CO ₂ laser and the UV-YAG laser may be the same as or different from the conditions for punching the embedding resin member 162. In the case of a series of perforations, it is more efficient to use a UV-YAG laser because a laser switching process is not necessary.

  Next, in a seventh step shown in FIG. 2C, a filled via 300 as a third conductive member is formed in the hole 180 by deposition of metal plating by an electroless plating method. By forming the filled via 300, the wiring layer 110b and the conductive layer 222 in the first conductive member are connected between the layers for the first time. At the same time, filled via 302 is formed in hole 182 and filled via 304 is formed in hole 184 by deposition of metal plating by electroless plating. Further, the first plated layer 172 is formed so as to cover the laser mask layer 170 by forming these filled vias 300, 302, and 304 and depositing metal plating by the same electroless plating method. Then, after the seventh step, the support 210 is peeled and removed. An example of the removal method is heat treatment. Next, the second plating layer 226 is formed so as to cover the conductive layer 222 by deposition of metal plating by an electroless plating method. Although the kind of metal plating which comprises each said filled via and a plating layer is not specifically limited, For example, copper plating is mentioned. Examples of the method for applying the electroless plating solution include a dipping method and a spray method.

  As described above, in the present embodiment, after the filled via 300 and the like are formed by the electroless plating method in the seventh step, the support 210 is peeled and removed. However, since the hole 180 has already been formed in the sixth step, which is a stage prior to the removal and removal of the support 210, there is no displacement in the connection between the first conductive member 110 and the conductive layer 222. The yield is maintained well.

  Next, in an eighth step shown in FIG. 2 (d), the laser mask layer 170 and the first plating layer 172 covering the laser mask layer 170, and the conductive layer 222 and the second plating layer 226 covering the conductive layer 222, It is selectively removed by photolithography and etching and patterned into a desired shape. At this time, the connection portion is specified by the alignment mark provided on the conductive layer 222 or the second plating layer 226 so that the connection between the first conductive member 110 and the conductive layer 222 by the filled via 300 is not disconnected. Mask with photoresist. This patterning method is not particularly limited, and may be a known method, and examples similar to the patterning of the metal layer 164 described above can be exemplified, and detailed description thereof is omitted here. In this way, the composite substrate 400 of this embodiment is obtained.

  Here, a method for manufacturing the above-described ceramic wiring board 100 will be described. 5 and 6 are schematic process diagrams showing a method for manufacturing the ceramic wiring board 100 of the present embodiment, and show the main parts thereof. First, as shown in FIG. 5, two structures 514 including a via precursor 516 and an easily removable filler 512 on a green sheet 510 for a low-temperature fired substrate, two shrinkage suppression sheets 502, 1 An easy-removable shrinkage suppression sheet 506 and a multilayer body 508 in which a wiring precursor layer 504 is laminated on the easy-removable shrinkage suppression sheet 506 are prepared.

The green sheet 510 for a low-temperature fired substrate provided in the structure 514 is obtained as follows. First, in order to prepare a base material of a non-glass material, for example, rare earth elements such as barium (Ba) and neodymium (Nd) as main components and titanium (Ti) oxides are prepared, and they have a predetermined composition. A predetermined amount is weighed so as to obtain a ratio, and mixed by, for example, wet mixing using water. Then, in order to synthesize a rare earth oxide-TiO ₂ compound such as BaO—Nd ₂ O ₃ , the mixture was calcined at a temperature of, for example, 1100 ° C. or higher, preferably about 1100 ° C. to 1400 ° C. for a predetermined time. Then, it grind | pulverizes so that it may become a predetermined particle size. The main component material does not need to be an oxide, and barium, rare earth elements, and titanium such as carbonates, hydroxides, sulfides, and the like that can be converted into oxides by heat treatment may be used. Good.

Next, a main component (base material powder) obtained by weighing a predetermined amount of each of the oxides of copper (Cu), zinc (Zn), and boron (B), which are sintering aid components, and calcining first. And the BaO-rare earth oxide-TiO ₂ compound, for example, by wet mixing using water or the like. The mixing ratio of the main component and the sintering aid at this time is not particularly limited, and can be appropriately adjusted, for example, so that the sintering aid is about 0.1 to 10% by mass with respect to the main component powder. Note that the sintering aid need not be an oxide as in the case of the main component material. For example, a sintering aid that becomes an oxide by heat treatment, such as carbonate, hydroxide, sulfide, etc., is used. Also good.

  Next, in order to obtain a powder having a narrow particle size distribution in order to improve the uniform dispersibility of the main component and the sintering aid component and to improve the workability such as molding in a subsequent process, Then, after re-calcining at a temperature equal to or lower than the sintering temperature for a predetermined time, the calcined powder is pulverized to a predetermined particle size.

  Then, the obtained powder is made into, for example, acrylic (acrylic acid, methacrylic acid or a homopolymer or copolymer thereof, more specifically, an acrylic ester copolymer, a methacrylic ester copolymer. , Acrylic acid ester-methacrylic acid ester copolymer, etc.), polyvinyl butyral, polyvinyl alcohol, acrylic-styrene, polypropylene carbonate, cellulose, ethyl cellulose, and other homopolymers or copolymers with an appropriate solvent. A dissolved organic binder such as a vehicle, or an inorganic binder, and a plasticizer such as ester and an organic solvent such as terpineol as necessary are mixed to obtain a slurry. Next, the slurry is formed into a sheet by an appropriate method such as a doctor blade method, a slurry casting method, a screen printing method, a rolling method, a pressing method, etc., and a plurality of the slurry sheets of this dielectric are laminated as desired to obtain a green sheet. 510 is obtained. Then, a plurality of through holes are provided in the thickness direction of the obtained green sheet 510 by punching, laser irradiation, drilling, or the like.

  Next, a metal paste is prepared, and this metal paste is filled into a part of the through holes of the green sheet 510 to form the via precursor 516. At this time, in order to reliably connect vias obtained from the via precursor 516, or vias and other conductors, a land precursor 516a is formed on one opening side of the through hole. As the metal paste, powders such as silver (Ag), copper (Cu), silver-palladium (Ag-Pd), gold (Au), platinum (Pt), nickel (Ni) (for example, the average particle size is on the order of several μm). Can be used which is added with an organic binder such as polyvinyl alcohol, acrylic or ethyl cellulose and mixed appropriately so as to have a viscosity suitable for coating. Also, the metal contained in the metal paste need not be a metal from the beginning, and for example, a metal that becomes a metal by heat treatment such as nitrate, oxide, chloride, etc. can be used.

Furthermore, it is preferable to add an appropriate sintering aid to the metal paste. As the sintering aid, amorphous SiO ₂ , B ₂ O ₃ , Al ₂ O ₃ , ZnO, PbO, Bi ₂ O ₃ , ZrO ₂ , TiO ₂ , alkali metal oxide, alkaline earth metal oxidation objects, or glass powder such as rare earth oxides, crystalline SiO _2, Al ₂ O _{3 of, ZrO 2, TiO 2, ZnO} , MgO, MnO 2, MgAl 2 O 4, ZnAl 2 O 4, MgSiO 3, Zn 2 Ceramic powders such as SiO ₄ , Zn ₂ TiO ₄ , SrTiO ₃ , CaTiO ₃ , MgTiO ₃ , BaTiO ₃ , AlN, Si ₃ N ₄ , and SiC can be appropriately selected and used alone or in combination.

  At this time, the compound or composition of the sintering aid contained in the metal paste is more preferably the same type as the sintering aid contained in the green sheet 510 of the base material. In addition, the mixing ratio of the metal component and the sintering aid component in the metal paste can be appropriately set according to the electrical properties and functions required for the via portion 110a formed by subsequent firing.

  Next, the thickness adjustment layer 520 is formed by applying the metal paste around the opening on the same side as the land precursor 516a of the through hole different from the above in the green sheet 510. The thickness adjusting layer 520 has the land precursor portions 516a when the structures 514 or the structures 514 and the easy-removable shrinkage suppression sheet 506 are laminated, so that the easily-removable fillers 512 or easily-removable. In order to reliably achieve contact between the filler 512 and the easy-removable shrinkage suppression sheet 506, it has a thickness similar to that of the land precursor portion 516a. A method for applying the thickness adjusting layer 520 is not particularly limited, and examples thereof include a screen printing method, a doctor blade method, and a slurry cast method.

  Subsequently, an easy-removable paste is prepared, and this easy-removable paste is filled into a through-hole different from the above in the green sheet 510 to form an easily-removable filler 512, whereby a structure 514 is obtained. The easily removable filler 512 can be easily removed from the through-hole even after firing at the firing temperature of the green sheet 510 (sintering temperature of the base material powder of the green sheet 510). The easy-removable paste for obtaining the easy-removable filler 512 includes a binder, an inorganic powder capable of imparting easy-removability to the easy-removable filler 512, and an organic solvent (for example, an organic vehicle) as necessary. Including. Examples of such inorganic powder include calcium carbonate, zirconium oxide, and aluminum oxide. Among these, calcium carbonate is preferable. Calcium carbonate is not as strong as tridymite, which will be described later, but it is difficult to shrink even if it is fired at the firing temperature of the green sheet 510, which means that it is easier to remove the fired product after firing. Therefore, it is suitable as a material for an easily removable paste.

  Although any resin can be used as the binder, a resin that can be rapidly thermally decomposed during firing is preferable.

  The shrinkage suppression sheet 502 is a sheet that does not easily shrink in the in-plane direction even when fired at the firing temperature of the green sheet 510, and the function of suppressing shrinkage of the one supported directly or indirectly by the shrinkage restraint sheet 502. Have The shrinkage-suppressing sheet 502 is prepared by adding an organic binder to the hardly sinterable ceramic material powder that does not sinter at the firing temperature of the green sheet 510 in the same manner as the paste preparation for the green sheet 510 and mixing them to prepare a slurry. The slurry is obtained by applying the slurry in a sheet form on a flat support by, for example, a doctor blade method, a slurry cast method, a screen printing method, a rolling method, a pressing method, and the like, and drying. The thickness of the shrinkage suppression sheet 502 may be, for example, 40 to 200 μm.

  Examples of the hardly sinterable ceramic material forming the shrinkage suppression sheet 502 include zirconia, alumina, tridymite, tridymite, α quartz, tridymite-α quartz, cristobalite, β quartz, and the like. In addition, it is difficult to efficiently and reliably remove the organic binder (debye treatment) while increasing the binding force of the multilayer body 508, the structure 514, and the easily removable shrinkage suppression sheet 506 by the shrinkage suppression sheet 502 during firing. A predetermined amount of glass powder having a softening point that is lower than the sintering temperature of the green sheet 510 and higher than the decomposition temperature of the organic component contained in the green sheet 510 may be added to the sinterable ceramic material powder.

  Similarly to the shrinkage suppression sheet 502, the easily removable shrinkage suppression sheet 506 is a sheet that does not easily shrink in the in-plane direction even when fired at the firing temperature of the green sheet 510 (sintering temperature of the base material powder of the green sheet 510). And has a function of suppressing the shrinkage of the one directly or indirectly supported by the shrinkage suppression sheet 502. Furthermore, the easily removable shrinkage suppression sheet 506 can be easily removed even after firing at the firing temperature of the green sheet 510.

  The easy-removable shrinkage suppression sheet 506 is, for example, a doctor blade method, a slurry cast method, a screen printing method, a rolling method, a paste having a shrinkage-suppressing effect among the above-described easy-removable pastes on a flat support. It is obtained by applying it into a sheet by a pressing method or the like and drying it. The thickness of the easily removable shrinkage suppression sheet 506 may be, for example, 20 to 200 μm.

  The multilayer body 508 is formed by applying the metal paste to a predetermined pattern on one main surface of the easily-removable shrinkage suppression sheet 506 by, for example, a screen printing method, and drying to form a wiring precursor layer 504. can get. The pattern of the wiring precursor layer 504 may be the same as the wiring pattern of the ceramic wiring board 100.

  Next, as shown in (a) of FIG. 6, the prepared members are laminated, and the laminated body 530 is obtained by, for example, thermocompression bonding the member in this state. At this time, the two structures 514 are stacked so that the via precursors 516 and the easily removable fillers 512 are bonded to each other while the land precursors 516a are directed in the same direction. Further, the multilayer body 508 is coated with the easily removable filler 512 and its exposed portion so as to be joined to the via precursor 516 while the wiring precursor layer 504 is directed in the same direction as the land precursor 516a. Are stacked with the structure body 514 so as to be bonded together.

  And although not shown in figure, after mounting the laminated body 530 on support tools, such as an alumina setter, for example, after performing a debuying process at appropriate temperature, it bakes for a predetermined time, for example at about 850 to 1050 degreeC. . This firing temperature is more preferably 950 ° C. or lower. At this time, in order to assist / promote sintering shrinkage in the thickness direction of the laminated body 530, pressurization in the thickness direction may be performed using an appropriate method such as placing a ceramic plate on the laminated body 530.

And as shown in FIG.6 (b), the shrinkage | contraction suppression sheet | seat 502 and the easily-removable shrinkage | contraction suppression sheet | seat 506 which remain | survived as a non-sintered body on both surfaces of the laminated body 530 after baking, the inside of a through-hole, and its opening part Easy-removable filler 512 that still remains as a green body in the periphery, for example, dry blasting such as sand blasting, bead blasting, and dry ice blasting, and wet blasting such as water jet, ice blasting, and slurry blasting , Removal using an appropriate method such as desmear treatment, plasma (ashing) treatment, jet scrub treatment, ultrasonic treatment, or brush treatment.
At this time, since the shrinkage suppression sheet 502 is laminated with the structure 514 via the easily removable shrinkage suppression sheet 506, even if the sheet itself is not easily removed, the shrinkage suppression sheet 502 is easily combined with the easily removable shrinkage suppression sheet 506. Removed. In this way, the ceramic wiring board 100 including the ceramic substrate 120 and the first conductive member 110 and having the through hole 120b is obtained. When the ceramic wiring board 100 is viewed upside down in FIG. 6, the first conductive member 110 includes a via portion 110 a provided penetrating in the thickness direction of the ceramic substrate 120 and one main surface of the ceramic substrate 120. And a wiring layer 110b provided thereon. The wiring layer 110b has a plane pattern of a predetermined shape, and a part thereof covers and closes the opening of the through hole 120b of the ceramic substrate 120. The via portion 110 a is integrated with the wiring layer 110 b on the lower main surface of the ceramic substrate 120, and has a land 110 d slightly protruding upward from the upper main surface of the ceramic substrate 120.

  According to the method for manufacturing the ceramic wiring board 100, the wiring layer 110b covering the opening of the through hole 120b in the ceramic substrate 120 can be formed. This is because the base for forming the wiring layer 110b can be provided by filling the through-hole 120b with the easy-removable filler 512 made of the easy-removable paste. Since the easily removable filler 512 can be easily removed by subsequent firing, there is no problem caused by filling the through hole 120b. By forming the wiring layer 110b covering the opening of the through hole 120b in this way, it is possible to connect to the wiring layer 110b via the through hole 120b without drilling the ceramic substrate 120. There are advantages. In addition, when calcium carbonate or the like that is not sintered even at the firing temperature of the green sheet 510 is used for the easily removable filler 512, shrinkage of the through-hole 120b due to firing is suppressed. It can be formed with shape accuracy.

  Furthermore, by shrinking the green sheet 510 and the like between the shrinkage suppression sheet 502 and the easily removable shrinkage suppression sheet 506, the shrinkage due to the sintering can be sufficiently suppressed. It can be manufactured with high dimensional accuracy and shape accuracy. At this time, since the easily removable shrinkage suppression sheet 506 is sandwiched between the green sheet 510 and the like and the shrinkage suppression sheet 502, even if the green sheet 510 or the like contains a sintering aid, The easily removable shrinkage suppression sheet 506 prevents diffusion to the shrinkage suppression sheet 502. As a result, it is possible to sufficiently prevent the shrinkage suppression effect of the shrinkage suppression sheet 502 from being reduced by the sintering aid.

  The composite substrate 400 obtained as described above has the ceramic wiring board 100 including the first conductive member 110 and the ceramic substrate 120 and the ceramic wiring board 100 as shown in FIG. The chip component 150 disposed in the through hole 120a, the resin member 240 that embeds the ceramic wiring board 100 and the chip component 150, the patterned wiring layer 404 provided on one side of the resin member 240, and the resin member 240 The patterned wiring layer 406 provided on the other side of the resin member 240 and the inner wall of the hole 180 reaching the wiring layer 404 from the wiring layer 406 side of the resin member 240 via the first conductive member 110 are provided. In the first conductive member 110, the wiring layer 110b and the wiring layer 404 are connected between the layers, and the first conductive member 110 is penetrated. Containing a via 300.

  The composite substrate 400 is a semiconductor built-in substrate in which a chip component 150 as a semiconductor device is embedded in a resin member 240 filled in the through hole 120a of the ceramic substrate 120 as an insulating layer. This can contribute to downsizing and thinning of electronic components and electronic devices provided. In the composite substrate 400, the bump electrode 152 of the chip component 150 and the wiring layer 406 are connected by the filled via 302, and the first conductive member 110 is connected to the wiring layer 406 by the filled via 304. The resin member 240 includes a resin layer 224 and an embedding resin member 162, and constitutes an insulating layer together with the ceramic substrate 120. The hole 180 has a tapered shape that narrows from the wiring layer 406 side toward the wiring layer 404 side, and the filled via 300 formed in the hole 180 also narrows from the wiring layer 406 side toward the wiring layer 404 side. It has a tapered shape. The filled via 300 protrudes above the upper surface of the wiring layer 110 b (wiring layer 406 side) by penetrating the first conductive member 110.

  Since the composite substrate 400 can be manufactured by the composite substrate manufacturing method of the present embodiment, the composite substrate 400 can be manufactured with sufficient dimensional accuracy, yield, and process efficiency. In the composite substrate 400, the filled via 300 is provided so as to penetrate the first conductive member 110, and is bonded to the first conductive member 110 on the outer peripheral side surface thereof and protrudes from the wiring layer 110 b of the first conductive member 110. The joined portion is joined to the inner wall of the hole 180. Thereby, compared with the case where the filled via 300 is bonded to the first conductive member 110 only at the end face thereof, the bonding strength thereof is further increased, and the filled via 300 is more firmly held in the hole 180. Connection reliability in the substrate 400 is further improved. Further, since the filled via 300 has a tapered shape that becomes thinner from the wiring layer 406 side toward the wiring layer 404 side, peeling of the wiring layer 404 from the resin member 240 can be prevented by a so-called anchor effect.

  Further, even when a void is generated in the filled via 300 in the composite substrate 400, the filled via 300 is bonded to the first conductive member 110 on the outer peripheral side surface thereof, and thus the wiring layer 110b and the wiring in the first conductive member 110 are connected. Interlayer connection with the layer 404 is sufficiently secured. In addition, even if the filled via 300 has a gap in the inside thereof, it is joined not only to the first conductive member 110 but also to the resin member 240 and / or the ceramic substrate 120 at the inner wall of the hole 180, so from the viewpoint of mechanical strength. Is also sufficient.

  Further, since the chip component 150 is arranged inside the ceramic substrate 120 and embedded in the resin member 240, the chip component 150 is simply compared with the case where the chip component 150 is arranged exposed on the surface layer of the ceramic substrate 120. 150 damage can be sufficiently prevented. Therefore, particularly when the chip component is a thin IC chip, the aspect of the composite substrate 400 of the present embodiment can be suitably used.

  According to the method for manufacturing the composite substrate 400 of the present embodiment, the filled via 300 is inserted into the hole 180 from the opening of the hole 180 with the first conductive member 110 and the conductive layer 222 partially exposed in the hole 180. Introduce. At this time, the filled via 300 is formed so as to be bonded to the first conductive member 110 and the conductive layer 222 exposed in the hole 180. By connecting the first conductive member 110 and the conductive layer 222 without perforating the conductive layer 222 from the outside in this way, the first conductive member is not peeled off from the support 210. 110 and the conductive layer 222 can be connected. Therefore, the support 210 can restrain the resin layer 224 and the embedding resin member 162 to suppress the shrinkage, and form the hole 180 that reaches the conductive layer 222 via the wiring layer 110b as desired. Can do.

  Furthermore, since there is no need to peel off the structure including the first conductive member 110 and the conductive layer 222 from the support 210 before the connection between the first conductive member 110 and the conductive layer 222, it is naturally possible to prevent the structure from being distorted or warped. When a structure is peeled from the support 210 and a via hole is formed from the peeled surface to attempt connection, the first conductive member 110, the conductive layer 222, and the like are caused by distortion and warpage during peeling. However, in this embodiment, such a decrease in connection accuracy can be sufficiently suppressed. Further, if the structure does not need to be peeled off from the support 210, damage to the structure due to peeling can be prevented, and the handling property is further improved. Thereby, the yield when manufacturing the composite substrate 400 is improved.

  Although the best mode for carrying out the present invention has been described above, the present invention is not limited to the present embodiment. The present invention can be variously modified without departing from the gist thereof. FIG. 3 is a schematic cross-sectional view showing a composite substrate according to another preferred embodiment of the present invention, and is a partially enlarged view in a circle of a one-dot chain line shown in FIG. 3 of FIG.

  In the composite substrate 600 of this embodiment, the first conductive member 610 provided in the ceramic wiring board 650 includes the wiring layer 610b on the inner layer (inside) instead of on the main surface of the ceramic substrate 620, and the ceramic substrate 620 has a through hole. Since the configuration is the same as that of the composite substrate 400 except that the chip component 150 is arranged in the bottomed hole 620a instead of the inside, description of other members is omitted. In order to manufacture such a composite substrate 600, when the ceramic wiring board 650 is manufactured, an easily removable shrinkage suppression sheet 506 is used instead of the multilayer body 508 as compared with the case of manufacturing the ceramic wiring board 100. Then, a multilayer body in which the green sheet 510 and the wiring precursor layer 504 are laminated between the easy-removable shrinkage suppression sheet 506 and the structure 514 is inserted with the wiring precursor layer 504 side facing the structure 514. The prepared members are laminated, and those in that state are subjected to, for example, thermocompression bonding to obtain a laminated body in place of the laminated body 530.

  Generally, when the wiring pitch is reduced in a printed wiring board such as a semiconductor-embedded substrate, the distance between wirings having different potentials (different potentials) is shortened, and a voltage is applied between those wirings, resulting in dielectric breakdown. It becomes easy. By including the ceramic wiring board 650 in the composite substrate 600, not only the resin member 240 but also a part of the ceramic substrate 620 exists as an insulating layer between the wiring layer 404 and the wiring layer 610b. Since the dielectric strength of the ceramic material is higher than that of the resin material, by sandwiching a part of the ceramic substrate 620 between the wiring layer 404 and the wiring layer 610b, the other wiring 604 having a different potential in the same layer as the wiring layer 404 can be obtained. Even if the distance to the wiring layer 610b is shortened, the occurrence of dielectric breakdown is suppressed. If the distance can be shortened, the composite substrate 600 can be further thinned and miniaturized, and the design freedom of the wiring layer 404 and the other wiring 604 in the same layer is increased, which is preferable.

  7 and 8 are schematic process diagrams showing a method for manufacturing a ceramic wiring board according to still another preferred embodiment of the present invention. First, as shown in FIG. 7A, two structures 714 each including a via precursor 516 in a green sheet 510 for a low-temperature fired substrate, one shrinkage suppression sheet 502, and one easy removal. Preparation sheet 506 is prepared. The structure body 714 is the same as the structure body 514 except that the easily removable filler 512 and the thickness adjusting layer 520 are not provided.

  Next, as shown in FIG. 7B, the prepared members are laminated, and the laminated body 730 is obtained by, for example, thermocompression bonding the member in this state. Subsequently, as illustrated in FIG. 7C, a through hole 732 is formed by drilling in the thickness direction of the stacked body 730 using a drill. Next, as shown in FIG. 8 (a), the through-hole 732 is filled with an easy-removable paste similar to the above to form an easy-removable filler 712, and one shrinkage suppression sheet 502, A multilayer body 708 in which a wiring precursor layer 704 is laminated on an easily removable shrinkage suppression sheet 506 is prepared. The multilayer body 708 is the same as the multilayer body 508 except that the pattern of the wiring precursor layer 704 is different from that of the wiring precursor layer 504.

  Next, as shown in FIG. 8B, the prepared members are laminated, and the laminated body 734 is obtained by, for example, thermocompression bonding the member in this state. At this time, the multilayer body 708 is opposed to the easily removable filler 712 and the multilayer body 708 so that the wiring precursor layer 704 is oriented in the same direction as the land precursor portion 516a and joined to the via precursor portion 516. The laminated body 730 is laminated so that a part of the exposed part of the exposed side is covered (that is, the remaining part is exposed) and bonded. Then, the debuying process and firing are performed in the same manner as performed on the laminate 530, and the shrinkage suppression sheet 502, the easily removable shrinkage suppression sheet 506, and the easily removable filler 712 are removed. Thus, the ceramic wiring board 700 including the ceramic substrate 120 and the first conductive member 710 and having the through hole 120b shown in FIG. 8C is obtained.

As is apparent from the method for manufacturing the ceramic wiring board 700, the ceramic wiring board according to the embodiment of the present invention can also be manufactured by using a drill when forming the through hole. In addition, according to the embodiment of the present invention, it is possible to manufacture the ceramic wiring board 700 in which the first conductive member 710 does not block the entire opening of the through-hole 120b but only a part thereof, so that various ceramics can be produced. A wiring board can be produced. When the first conductive member 710 that closes only a part of the through hole 120b has a through hole surrounded by the closed portion, a hole for filling the third conductive member is formed. Since the through-hole is already formed in the first conductive member 710 at the time, it is not necessary to use a YAG laser, and it is only necessary to use a CO ₂ laser or a UV-YAG laser in forming the hole, thereby shortening the process. There is an advantage that can be achieved.

  In the present embodiment, the chip component 150 is disposed in the through hole 120a. However, the composite substrate of the present invention may not include the chip component. In this case, in the third step, the chip component 150 Placement is omitted. The ceramic substrate may not be a low-temperature fired substrate, and may be a normal ceramic substrate, for example, a low electrostatic loss material. Further, the ceramic wiring board is not limited to one having only one wiring layer, and may have a plurality of wiring layers on the main surface and / or inner layer. In that case, it has a structure in which a wiring layer is sandwiched between a plurality of ceramic layers, and between each ceramic layer, in addition to internal conductors such as vias connecting the layers, electronic elements such as inductors and capacitors are provided. Also good. Further, some or all of the plurality of wiring layers may be connected to the second conductive member by a third conductive member (for example, filled via). Further, by using a relatively thick metal foil as the conductive layer 222, the conductive layer 222 is conductive in the eighth step without forming the second plating layer 226 after the support 210 is peeled off through the seventh step. Layer 222 may be patterned into a desired shape. Furthermore, in the method for manufacturing a ceramic wiring board, three or more structures 514 may be stacked. In the above description, the conductive layer 222 is patterned in the eighth step. However, a wiring pattern or an alignment mark may be formed in the conductive layer 222 in the second step. In that case, it is possible to mount the chip component 150 and the ceramic wiring board 100 with precise positional accuracy by exposing the alignment mark on the stacked body 220 and performing alignment. In the second step, a conductive layer on which only alignment marks are formed may be used as the conductive layer 222, and the alignment mark may be read to pattern the wiring pattern on the conductive layer 222. Even in such a case, it is possible to perform precise alignment based on the alignment mark.

  In the present embodiment, nothing is filled in the hole 180 above the filled via 300, but the resin may be filled there. As the resin to be filled, the same resin material as that of the resin member 240 can be used. The shape of the filled via 300 is not limited to the tapered shape as described above, and may be a columnar shape. Further, the filled via 300 does not need to protrude above the upper surface of the wiring layer 110b of the first conductive member 110, and may be bonded to the wiring layer 110b. The filled via 300 may not be formed by a plating method. For example, the filled via 300 may be formed by filling a conductive paste in the hole 180 and drying or heating. Examples of the conductive paste include those similar to the above metal paste. Further, the third conductive member may not be filled up to the center in the in-plane direction of the hole 180 like a filled via as long as the third conductive member is bonded to the wiring layer 110b and the wiring layer 404. Only plating may be formed.

  As described above, according to the composite substrate and the manufacturing method thereof according to the present invention, sufficient dimensional accuracy, yield, and process efficiency can be realized. Therefore, it can be widely and effectively used for various electronic devices, apparatuses, systems, devices, and the like that include a semiconductor-embedded substrate and other printed wiring boards, especially those that require miniaturization, thinning, and high performance. .

It is a schematic process drawing which shows the manufacturing method of the composite substrate which concerns on embodiment of this invention. It is a schematic process drawing which shows the manufacturing method of the composite substrate which concerns on embodiment of this invention. It is a schematic sectional drawing which shows the composite substrate which concerns on another embodiment of this invention. It is the elements on larger scale of the composite substrate shown in FIG. It is a schematic process drawing which shows the manufacturing method of the composite_body | complex which concerns on embodiment of this invention. It is a schematic process drawing which shows the manufacturing method of the composite_body | complex which concerns on embodiment of this invention. It is a schematic process drawing which shows the manufacturing method of the composite_body | complex which concerns on another embodiment of this invention. It is a schematic process drawing which shows the manufacturing method of the composite_body | complex which concerns on another embodiment of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 100, 650, 700 ... Ceramic wiring board, 110, 610, 710 ... 1st electroconductive member, 110a ... Via part, 110b, 404, 406, 610b ... Wiring layer, 110d ... Land, 120, 620 ... Ceramic substrate, 120a , 120b, 120c, 732 ... through-hole, 150 ... chip component, 152 ... bump electrode, 162 ... embedding resin member, 164 ... metal layer, 170 ... laser mask layer, 172 ... first plating layer, 180, 182, 184, 620a ... hole, 200, 530, 730, 734 ... laminate, 210 ... support, 220 ... second composite, 222 ... conductive layer, 224 ... resin layer, 226 ... second plating layer, 240 ... Resin member, 250, 514, 714 ... structure, 300, 302, 304 ... filled via, 400, 600 ... composite substrate, 502 Shrinkage suppression sheet, 504, 704 ... wiring precursor layer, 506 ... easily removable shrinkage suppression sheet, 508, 708 ... multilayer, 510 ... green sheet, 512, 712 ... easily removable filler, 516 ... via precursor, 516a ... Land precursor, 520 ... Thickness adjusting layer.

Claims (5)

A step of preparing a structure including a composite including a first conductive member and a ceramic substrate, a resin member embedding the composite, and a second conductive member provided on one side of the resin member. When,
Forming a hole reaching the second conductive member from the other side of the resin member via the first conductive member;
Forming a third conductive member for connecting the first conductive member and the second conductive member in the hole;
The manufacturing method of the composite substrate which has this. The ceramic substrate has a through hole in its thickness direction,
The first conductive member has a closing portion that closes at least a part of the through-hole,
In the step of forming the hole, the hole is formed so as to pass through the blocking portion in the through hole,
The method of manufacturing a composite substrate according to claim 1, wherein in the step of forming the third conductive member, the third conductive member is joined to the closed portion of the first conductive member. A composite including a first conductive member and a ceramic substrate;
A resin member for embedding the composite;
A second conductive member provided on one side of the resin member;
The first conductive member is provided by being joined to an inner wall of a hole reaching the second conductive member via the first conductive member from the opposite side of the resin member to the second conductive member. And a third conductive member connecting the second conductive member and penetrating the first conductive member;
Containing composite substrate.   The composite substrate according to claim 3, wherein the first conductive member has a wiring layer inside the ceramic substrate. Filling the through holes of the green sheet made of the base material of the ceramic substrate having through holes in the thickness direction with a material that does not sinter at the firing temperature of the base material;
Forming a conductive layer so as to cover at least a part of the non-sintered material to obtain a laminate;
Firing the laminate at the firing temperature of the substrate material;
Removing the non-sintered material from the fired laminate;
A method for producing a composite having

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