JP2009277873A - Wiring substrate, and semiconductor device and manufacturing method thereof - Google Patents

Abstract

There is provided a wiring substrate that enables stable bonding between an electrode pad of a semiconductor chip and a protruding electrode without restriction in the mounting direction of the wiring substrate and the semiconductor chip.
An insulating base material, and a plurality of conductor wirings 2a and 2b provided on the insulating base material and forming inner lead portions arranged in alignment with a mounting region 1 on which a semiconductor chip is mounted, and And the protruding electrodes 3a and 3b formed on the inner lead portions of the conductor wiring. The conductor wiring is arranged so as to be orthogonal to the X side and the Y side orthogonal to each other in the mounting region. Both the protruding electrodes provided on the conductor wiring on the X side and the Y side have a dimension in the Y side direction that is longer than the dimension in the X side direction of the portion located on the conductor wiring.
[Selection] Figure 1

Description

  The present invention is a wiring substrate configured by providing a conductor wiring on an insulating base material, such as a tape carrier substrate used for chip-on-film (COF), particularly a structure of a protruding electrode formed on the conductor wiring, The present invention also relates to a semiconductor device using the same and a manufacturing method thereof.

  A representative wiring board is a tape wiring board, and COF is known as a kind of package module using the tape wiring board. The COF has a structure in which a semiconductor chip is mounted on a flexible insulating tape wiring substrate and the mounting portion is protected by sealing with a resin. The semiconductor chip in the COF is bonded to a conductor wiring on a tape wiring line called an inner lead formed in the mounting area.

  The tape wiring board includes, as main elements, an insulating film base material and a large number of conductor wirings formed on the surface thereof. Generally, polyimide is used as the film substrate, and copper is used as the conductor wiring. If necessary, a metal plating film and a solder resist layer which is an insulating resin are formed on the conductor wiring.

  The conductor wiring on the tape wiring substrate and the electrode pad on the semiconductor chip are connected via a protruding electrode. This protruding electrode is provided by either a method of forming in advance with respect to the conductor wiring on the tape wiring substrate or a method of forming with respect to the electrode pad on the semiconductor chip.

  An example of a method for forming a protruding electrode for a conductor wiring on a tape wiring substrate is described in Patent Document 1. The tape wiring board described in Patent Document 1 will be described with reference to FIG. FIG. 5 is a plan view of a semiconductor chip mounting portion in the tape wiring substrate.

  Reference numeral 1 denotes a semiconductor chip mounting portion, in which a plurality of conductor wirings 2 are arranged in alignment on an insulating base material (not shown). The portion of the conductor wiring 2 located in the mounting portion 1 forms an inner lead portion, and the projecting electrodes 3 c and 3 d are formed on the inner lead portion of each conductor wiring 2. The protruding electrodes 3c and 3d are formed across the insulating base on both sides of the conductor wiring 2 across the longitudinal direction of the conductor wiring 2, and the cross-sectional shape in the width direction of the conductor wiring 2 of the protruding electrodes 3c and 3d is the center portion. Is higher than both sides. The joint portions 14 a and 14 b indicate portions where the protruding electrodes 3 c and 3 d are joined to the conductor wiring 2, respectively.

According to this tape wiring board, the protruding electrodes 3c and 3d formed on the conductor wiring 2 can obtain practically sufficient connection stability with respect to the force applied in the lateral direction. Further, the shape of the protruding electrodes 3c and 3d is suitable for connection to the electrode pad of the semiconductor chip.
Japanese Patent No. 3565835

  In the tape wiring substrate having the above-described configuration, an ultrasonic method is used for bonding the protruding electrodes 3c and 3d of the conductor wiring 2 and the electrode pads (not shown) of the semiconductor chip. Here, the side of the mounting part 1 on the side where the protruding electrode 3c is arranged is the X side, and the side of the mounting part 1 on the side where the protruding electrode 3d is arranged is the Y side. When joining by the ultrasonic method, the amplitude of the ultrasonic wave has directionality. Therefore, the lead-out direction of the conductor wiring 2 at the junction on the X side and the Y side of the semiconductor chip is different from the amplitude direction of the ultrasonic waves. That is, when the ultrasonic wave is applied in the longitudinal direction of the conductor wiring 2 on the X side and the ultrasonic wave is applied in the width direction on the Y side, the bonding is performed through the protruding electrodes 3c and 3d. The stress applied to the conductor wiring 2 is different between the X side and the Y side.

  For example, with respect to the protruding electrode 3c in the case where the conductor wiring 2 is drawn out in the direction orthogonal to the X side of the semiconductor chip, the dimension of the joint portion 14a in the width direction of the conductor wiring 2 (that is, the width of the conductor wiring 2) Is X1, and the longitudinal dimension is Y1. On the other hand, for the protruding electrode 3d when the conductor wiring 2 is drawn out in the direction orthogonal to the Y side, the dimension of the joint portion 14b in the width direction of the conductor wiring 2 (that is, the width of the conductor wiring 2) is Y2. The dimension in the longitudinal direction is X2. Then, X1 <Y1 and X2> Y2.

  In this state, when the ultrasonic wave at the time of joining is applied so that the amplitude thereof is parallel to the Y side, the conductor wiring 2 moves on the Y side side and vibrates in the short direction of the conductor wiring 2, and the joining is not performed. It tends to be stable. On the other hand, when the joining condition is adjusted to the Y side, the joining on the X side tends to become unstable.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a wiring board that enables stable bonding between an electrode pad of a semiconductor chip and a protruding electrode without any restriction in the mounting direction of the wiring board and the semiconductor chip.

  The wiring board of the present invention includes an insulating base material, and a plurality of conductor wirings provided on the insulating base material and forming inner lead portions arranged in alignment with a mounting region on which a semiconductor chip is mounted; And a protruding electrode formed on each inner lead portion of the conductor wiring, and the conductor wiring is arranged so as to be orthogonal to the X side and the Y side orthogonal to each other in the mounting region. Both of the protruding electrodes provided on the conductor wiring on the X side and the Y side have a dimension in the Y side direction longer than a dimension in the X side direction of a portion located on the conductor wiring. .

  The semiconductor device of the present invention includes a wiring board having the above-described configuration and a semiconductor chip mounted on the wiring board, and the electrode pads of the semiconductor chip and the conductor wiring are connected via the protruding electrodes. .

  According to another aspect of the present invention, there is provided a method for manufacturing a semiconductor device, comprising: using a wiring board having the above-described configuration; placing a semiconductor chip on the wiring board; and connecting the electrode pad of the semiconductor chip and the protruding electrode to The electrode pad and the conductor wiring are connected via each other.

  According to the wiring board of the present invention, the bonding state between the electrode pad of the semiconductor chip and the protruding electrode of the tape wiring board becomes small between the X side and the Y side of the semiconductor chip, and the mounting direction is restricted. There is no problem and stable bonding is possible.

  The present invention can take the following aspects based on the above configuration.

  That is, in the wiring board of the present invention having the above-described configuration, the portion of the protruding electrode located on the conductor wiring has the dimensions in the X-side direction and the Y-side direction of the protruding electrode on the X side. It is preferable that the Y-side protruding electrode has the same dimension in the Y-side direction and the Y-side direction.

  The X-side conductor wiring preferably has a narrower wiring width than the Y-side conductor wiring.

  Moreover, it is preferable that the center part protrudes from the edge part on the upper surface of the said protruding electrode.

  In the semiconductor device of the present invention having the above-described configuration, the wiring board having any one of the above-described configurations can be used.

  Moreover, it is preferable that the protruding electrode and the electrode pad for bonding on the X side and the Y side of the semiconductor chip are bonded by applying an ultrasonic wave having the Y side direction as an amplitude direction. .

  In the method for manufacturing a semiconductor device of the present invention having the above configuration, the wiring substrate having any one of the above configurations can be used.

  Further, the step of connecting the electrode pad and the protruding electrode may be performed by aligning the Y-side direction of the wiring board with the amplitude direction of the ultrasonic wave, and the protruding electrode of the wiring board and the electrode pad of the semiconductor chip. It is preferable to include a step of aligning the electrodes so as to face each other and a step of applying ultrasonic waves while pressing to join the protruding electrodes and the electrode pads.

  Moreover, it is preferable to have the process of forming a sealing resin layer before the process of joining the said protruding electrode and the said electrode pad.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(Embodiment 1)
1A is a plan view showing an arrangement of conductor wirings 2 in the tape wiring board of the first embodiment, and FIG. 1B shows a structure of a main part indicated by reference numeral A in FIG. It is the top view seen from the surface side. FIG. 2 is a perspective view of the inner lead portion.

  In FIG. 1, reference numeral 1 denotes a mounting portion of a semiconductor chip, and a plurality of conductor wirings 2a and 2b are formed on the surface of an insulating tape base material (not shown). The side of the mounting part 1 on the side where the conductor wiring 2a is arranged is the X side, and the side of the mounting part 1 on the side where the conductor wiring 2b is arranged is the Y side. The end portions of the plurality of conductor wires 2a and 2b form inner lead portions, and the projecting electrodes 3a and 3b are formed on both sides of the conductor wires 2a and 2b on the inner lead portion of each conductor wire 2. Yes. The protruding electrode 3a is formed on the conductor wiring 2a arranged on the X side of the semiconductor chip, and the protruding electrode 3b is formed on the conductor wiring 2b arranged on the Y side of the semiconductor chip. The protruding electrodes 3a and 3b are arranged in alignment on the semiconductor chip mounting portion 1 so as to face electrode pads (not shown) of the semiconductor chip.

  The width of the protruding electrode 3a on the conductor wiring 2a in the width direction of the conductor wiring 2a (that is, the width of the conductor wiring 2a) is X1a, the entire width of the protruding electrode 3a is X1b, and the protruding electrode in the longitudinal direction of the conductor wiring 2a. The width of 3a is assumed to be Y1. Also, the width of the protruding electrode 3b on the conductor wiring 2b in the width direction of the conductor wiring 2b (that is, the width of the conductor wiring 2b) is Y2a, and the entire width of the protruding electrode 3b is Y2b. The width of the protruding electrode 3b is X2. In the present embodiment, X1a <Y1 and X2 <Y2a are set.

  As shown in FIG. 3, according to the above configuration, when the electrode pad 6 of the semiconductor chip and the protruding electrodes 3a and 3b are bonded using ultrasonic waves, both the X side and the Y side of the semiconductor chip are Similarly, the amplitude of the ultrasonic wave can be given to the direction in which the protruding electrodes 3a and 3b are elongated. As a result, the X-side protruding electrode 3a and the Y-side of the conductor wiring 2a on the X-side of the semiconductor chip and the conductor wiring 2b on the Y-side are different from each other in terms of the stress applied by the ultrasonic waves. Thus, it is possible to perform stable bonding without any difference between the protruding electrode 3b.

  Further, the areas of the protruding electrodes 3a and 3b on the conductor wirings 2a and 2b are equal on the X side and the Y side of the semiconductor chip, and the vertical and horizontal configurations are formed equally, that is, X1a = X2, Y1 = Y2a is desirable. Thereby, the areas of the joint portions 7a and 7b can be made equal, and the joining state can be made equivalent on the X side and the Y side.

  Moreover, as for the upper surface of the protruding electrodes 3a and 3b shown in FIG. Thus, in the method of bonding the semiconductor chip to the wiring board after the sealing resin is first dropped on the wiring board, the center portion 4 of the protruding electrode protrudes, so that the sealing resin is separated and bonded to the electrode pad. Can be connected stably.

  With reference to FIG. 4, the manufacturing method of the semiconductor device in the present embodiment will be described. 4A to 4C are cross-sectional views showing the respective steps of the manufacturing method.

  First, as shown in FIG. 4A, the conductor wiring 2 was formed on the tape base 8 that is an insulating base, and the protruding electrode 3 was formed on the conductor wiring 2 for joining with the semiconductor chip 9. A wiring board having the above-described configuration is prepared. Then, a sealing resin layer 10 for protecting the element surface of the semiconductor chip 9 is formed on the wiring board. Further, the electrode pad 6 on the semiconductor chip 9 is aligned so as to face the protruding electrode 3.

  Next, as shown in FIG. 4B, the semiconductor chip 9 is pressurized and heated by the ultrasonic application jig 11 and further ultrasonic waves are applied to the electrode pads 6 of the semiconductor chip 9 and the wiring substrate. The protruding electrode 3 is joined. At this time, as shown in FIG. 3, it is desirable that the ultrasonic amplitude direction and the longitudinal directions of the protruding electrodes 3 a and 3 b on both the X side and the Y side of the semiconductor chip 9 are the same direction. The electrode pad 6 is preferably plated with gold. As the protruding electrode, a material mainly composed of gold, silver, palladium, copper, nickel, tin, lead, or the like can be used. The height of the protruding electrode 3 can be about 15 μm, for example.

  According to the above process, there is an advantage that the sealing resin 10 can be cured simultaneously with the mounting of the semiconductor chip 9 by heating. However, after the semiconductor chip 9 is mounted, it is possible to inject the sealing resin 10 later and to cure the sealing resin by heating to form a semiconductor device.

  Next, as shown in FIG. 4C, the jig 11 is removed to complete the semiconductor device.

  According to the above embodiment, there is no difference in the bonding state between the protruding electrode connecting portion on the X side and the protruding electrode connecting portion on the Y side of the semiconductor chip, and bonding with reduced disconnection of the conductor wiring is possible. . Therefore, it is possible to provide a semiconductor device in which the bonding property of the semiconductor chip by ultrasonic bonding is stable and the manufacturing yield is high.

  According to the wiring board of the present invention, it is possible to mount a semiconductor chip capable of obtaining a stable bonded state by ultrasonic bonding.

(A) is a top view which shows the structure of the tape wiring board in Embodiment 1 of this invention, (b) is an enlarged plan view of the principal part Perspective view of inner lead part of the same tape wiring board The top view which shows the mounting state of the semiconductor chip to the tape wiring board in Embodiment 1 Sectional drawing which shows the manufacturing method of the semiconductor device in Embodiment 1 A plan view showing a semiconductor chip mounting portion in a conventional tape wiring board

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor chip mounting part 2, 2a, 2b Conductor wiring 3, 3a, 3b, 3c, 3d Projection electrode 4 Center part 5 End part 6 Electrode pad 7a, 7b, 14a, 14b Joint part 8 Insulating base material (tape base) Material)
9 Semiconductor chip 10 Sealing resin layer 11 Ultrasonic jig

Claims (9)

An insulating substrate;
A plurality of conductor wirings provided on the insulating base material and forming inner lead portions arranged in alignment with a mounting region on which a semiconductor chip is mounted;
A protruding electrode formed on each inner lead portion of the conductor wiring,
In the wiring board, the conductor wiring is arranged to be orthogonal to the X side and the Y side orthogonal to each other in the mounting region,
Both of the protruding electrodes provided on the conductor wiring on the X side and the Y side have a dimension in the Y side direction longer than a dimension in the X side direction of a portion located on the conductor wiring. A wiring board characterized by that.   The portion of the protruding electrode located on the conductor wiring is arranged such that the Y side direction of the protruding electrode on the Y side and the dimension in the X side direction and Y side direction of the protruding electrode on the X side The wiring board according to claim 1, wherein dimensions in the Y-side direction are equal to each other.   The wiring board according to claim 1, wherein the X-side conductor wiring has a narrower wiring width than the Y-side conductor wiring.   The wiring board according to claim 1, wherein a central portion of the upper surface of the protruding electrode protrudes from an end portion. The wiring board according to any one of claims 1 to 4,
A semiconductor chip mounted on the wiring board,
A semiconductor device in which an electrode pad of the semiconductor chip and the conductor wiring are connected via the protruding electrode.   The semiconductor according to claim 5, wherein the protruding electrode and the electrode pad for bonding on the X side and the Y side of the semiconductor chip are bonded by applying an ultrasonic wave whose amplitude direction is the Y side direction. apparatus. Using the wiring board according to any one of claims 1 to 4,
A semiconductor chip is disposed on the wiring board,
A method for manufacturing a semiconductor device, wherein the electrode pad and the conductor wiring are connected via the protruding electrode by connecting the electrode pad of the semiconductor chip and the protruding electrode. The step of connecting the electrode pad and the protruding electrode includes:
Aligning the Y-side direction of the wiring board with the amplitude direction of ultrasonic waves and aligning the protruding electrodes of the wiring board with the electrode pads of the semiconductor chip; and
The method for manufacturing a semiconductor device according to claim 7, further comprising: applying an ultrasonic wave while pressing to join the protruding electrode and the electrode pad.   The method for manufacturing a semiconductor device according to claim 8, further comprising a step of forming a sealing resin layer before the step of bonding the protruding electrode and the electrode pad.

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