JP2009273068A - Low-impedance-loss line - Google Patents

Abstract

An ideal power supply function that has a very low impedance value and a very small transmission coefficient value up to a band exceeding 1 [GHz], which cannot be realized by a capacitor, is realized.
[Solution]
The low impedance loss line has anode foil 15 and cathode foil 19 made of a valve metal having dielectric oxide films 16.18 disposed opposite to each other, and the separator is interposed between anode foil 15 and cathode foil 19. It is formed as a parallel plate line by a solid electrolyte layer 17 made of a conductive polymer obtained by polymerizing a monomer or monomer solution impregnated with an oxidizing agent, and is very low up to a band exceeding 1 [GHz]. It has an impedance value and a very small transmission coefficient value.
[Selection] Figure 4

Description

The present invention relates to a circuit or a circuit component, and in particular, is used for a power converter such as a high-frequency DC-DC converter and a DC power distribution circuit of an information technology apparatus and a digital data communication device using a high-speed switching element. The present invention relates to a low-impedance loss line that can be converted and can improve conversion efficiency, signal quality (signal integrity), and electromagnetic compatibility (EMC).

In recent years, transistors have been increased in speed in order to achieve higher performance and higher functionality of information technology devices and multimedia devices. Information technology devices, multimedia devices, and power converters are also strongly demanded to save energy and reduce size and weight.

However, there is a problem that high-level electromagnetic noise is generated in circuits and devices that use high-speed switching elements. In circuit design technology that uses conventional components such as capacitors, EMC countermeasure components and shielding materials are used. However, it was difficult to improve signal integrity and EMC, and it was difficult to meet the demands for energy saving and miniaturization.

It is physics that dominates the theory of circuit design technology, and more directly, electromagnetism. According to electromagnetism, circuit states can be considered as active states (exited states), steady states (stationary states), and quasi-steady states (quasi-stationary states that can be regarded as steady states in practice)
There are stationary states. The active state is a state in which the electric field and magnetic field on the circuit are changing or oscillating, and an AC circuit is one example. The oscillating electric and magnetic fields travel as electromagnetic waves in the insulator. When the insulator is a vacuum space, the electromagnetic wave travels at the speed of light.

The steady state is a state where the electric field and magnetic field on the circuit are stationary, and a DC circuit is an example. The quasi-steady state means that an electric field and a magnetic field travel on the circuit as an electromagnetic wave, but the wavelength of the electromagnetic wave is very long compared to the circuit length, and even if the behavior of the electromagnetic wave in the circuit is regarded as only strong and weak vibration, it is practical. This is a state where no inconvenience occurs. When a low-frequency analog circuit or a switching element having a rise time of about 1 [ns] or more is used in a circuit having a wiring of 10 [cm] or more, this is an example that can be regarded as a quasi-stationary state.

According to electromagnetics, the current in a circuit in an active state is defined as Ampere's law and is given by

According to electromagnetism, the electric potential V is defined as an integral value of an electric field from an infinite point where the electric field does not reach to one point of the conductor, but practically as an integral value of the electric field from the ground plane to one point of the conductor, E is obtained from the following equation as the slope of the potential V.

Maxwell published Maxwell's equation, which merged the theory of magnetic fields and the theory of electric fields, in 1873, and then transformed this equation into the form of D'Alembert's wave equation to derive the vector wave equation. Maxwell, who had been insisting since 1862, theoretically proved that both electromagnetic waves and light propagate at the speed of light using this equation, and completed linear electromagnetic wave theory (hereinafter referred to as electromagnetic wave theory). Was completed. In 1887, Hertz demonstrated the existence of electromagnetic waves by experiment and proved the correctness of Maxwell's electromagnetic wave theory.

According to electromagnetism, an electric field and a magnetic field that change with time interact with each other and propagate in a space or a dielectric as a transverse wave. The speed of the electromagnetic wave propagating in the vacuum is the speed of light. The propagating electromagnetic wave propagates power according to the pointing vector theory. An electromagnetic wave propagating in space is composed of an electric field wave and a magnetic field wave whose period and polarity coincide and whose amplitude vector is orthogonal to the traveling direction. The electromagnetic wave in this state is called a TEM (transverse electromagnetic) wave. The value obtained by dividing the amplitude of the electric field wave constituting the TEM wave by the amplitude of the magnetic field wave is the wave impedance (surge
impedance or wave impedance).

According to electromagnetism, electromagnetic waves travel not only in space but also in media. The speed of the electromagnetic wave traveling through the lossless dielectric is slowed by the square root of the relative permittivity with respect to the speed of light, and the wavelength is shortened by the square root of the relative permittivity. The latter is called wavelength compression.

According to electromagnetism, an electromagnetic wave traveling in a lossy medium follows an attenuation constant γ expressed by the following equation, and the amplitude decreases and the phase changes with progress. α which is a real term of γ is called an attenuation constant, and β which is an imaginary term of γ is called a phase constant. α is expressed in units of nep / m (neper / meter). 1 [nep / m] means that the amplitude decreases by exp- ¹ or 0.368 times after proceeding 1 meter.

According to electromagnetics, the term in parentheses in the following equation obtained by transforming γ ² in equation (3) is defined as the complex permittivity for a lossy dielectric, and the imaginary part (σ / ε ₀ ω) is defined as The value divided by the real part (ε _r ) is called the dielectric loss tangent and is represented by tan δ. However, tan δ has no deep meaning in electromagnetics.

When the electromagnetic wave travels in the conductor, there is no electric charge acting on the electromagnetic wave in the conductor, and the conductivity σ is much larger than ωε, so γ is expressed by the following equation. Δ, which is the reciprocal of the attenuation constant α in the following equation, is called the skin thickness.

According to electromagnetics, the intrinsic impedance Z _0, which is the ratio of the electric field to the magnetic field of the electromagnetic wave traveling in the conductor, is assumed to be very large compared to ωε in the intrinsic impedance in a lossy medium. Given.

In an active state or quasi-stationary state where the electric and magnetic fields on the circuit are changing or oscillating, the electromagnetic wave theory dominates the circuit, and in this case, it is difficult for the electromagnetic wave to travel through the conductor. However, in a steady state where the electric and magnetic fields on the circuit are stationary, the current can move relatively easily through the conductor.

According to physics, there are almost inexhaustible free electrons or charges in the conductor. However, the total charge amount in the conductor is determined depending on the physical properties, and the value is constant in a steady state. When a static load is connected to the direct current power source, a current flows due to the movement of charges in the conductor, but in general, only a small electric field can be applied to the movement axis of charges, so the average movement speed of charges is extremely slow.

For example, when a current of 10 amperes defined by a charge velocity (dq / dt) in a conductor is traveling in a copper wire having a cross section of 1 square millimeter, the current progression rate is calculated according to physics It becomes 0.368 [mm / s] at room temperature. Since the charge in the conductor can move although it is slow, if the same amount of charge is constantly supplied from one end of the conductor when the charge is constantly consumed at the other end of the conductor, Energy supply to a steady load such as a resistor connected to the other end is performed without any trouble.

Telecommunications engineering handles the progression of electrical signals on transmission lines. According to telecommunications engineering, when an electric signal is applied between two DC-insulated conductors, the electric signal becomes a current wave and a voltage wave and travels through the transmission line.

In telecommunications engineering, as in AC circuit theory, the current is the average charge velocity (dq / dt) in the conductor, that is, the conductor current. However, in Maxwell's equations that form the basis of electromagnetism, the conductor current corresponds to a current density J that is not a function of time.

The AC circuit theory and telecommunications engineering define the current as dq / dt for the following reasons. Kirchhoff's law, one of the important laws supporting AC circuit theory, was announced in 1845, Maxwell theoretically proves the existence of electromagnetic waves, and Hertz confirms the existence of electromagnetic waves by experiments42 Years ago. The telegraph equation, one of the important theories supporting telecommunications engineering, was developed in 1874, 13 years before the existence of electromagnetic waves was confirmed. Therefore, at the time when AC circuit theory and telecommunications engineering were put into practical use, there was no idea that the action of the circuit was the action of electromagnetic waves. Furthermore, the theory was not revised after that.

In the telegraph equation that forms the basis of telecommunications engineering, the basis of the fact that the conductor current can flow at the speed of light is the D'Alembert wave equation. In D'Alembert's wave equation, the subject of the wave is expressed by a vector function with a Laplacian of scalar quantity and is not specified. The fact that the conductor current becomes a wave with the voltage between conductors is consistent with the electromagnetism governing the electrical circuit, so the telegraph equation obtained by comparing the circuit equation for voltage and current with the D'Alembert wave equation is the electromagnetism Is irrelevant and is contrary to electromagnetism.

If the definition of current is contrary to electromagnetism, the idea of contradicting electromagnetism also arises in relation to line voltage, impedance, electromagnetic waves, and transmission loss. Although this contradiction is seen in telecommunications engineering, it has a long history and has abundant track record of application to transmission line design. Therefore, conventional transmission line design for continuous wave is inconsistent with electromagnetics. Has not been revealed.

In transmission line design for intermittent waves such as switching waves or digital waves, the idea of being efficient based on telecommunications engineering is dominant. However, since there is little practical experience with digital circuits in telecommunications engineering, the contradiction with electromagnetism may become apparent unless careful design and analysis is performed in contrast to electromagnetism.

According to electromagnetics, when the insulator sandwiched between the two conductors constituting the transmission line is in a vacuum, the electromagnetic wave of the TEM wave travels in the vacuum at the speed of light. In other words, the current and voltage in this case travel through the insulator, not the conductor of the transmission line, and have values obtained from the equations (1) and (2), respectively. Since an actual current or voltage is a magnetic field or an electric field, it can travel in a quasi-light speed as a wave in the insulator. A value obtained by dividing the amplitude of the electric field wave constituting the TEM wave on the transmission line by the amplitude of the magnetic field wave is the characteristic impedance.

According to telecommunications engineering, the behavior of a signal traveling on a transmission line is determined by the characteristic impedance and propagation constant of the transmission line. The characteristic impedance Z ₀ of the parallel plate line the ideal flat conductor is parallel to opposite sides of the ideal insulator is determined from the following equation by the physical constants of the transmission line. The material characteristics of the flat conductor and the insulator do not have a large practical effect on the characteristic impedance of the transmission line.

According to telecommunications engineering, when electromagnetic waves are injected into a transmission line having an unknown characteristic impedance (Z ₁ ) through a transmission line having a known characteristic impedance (Z ₀ ),
The reflection coefficient (S ₁₁ ) at the connection point between the two transmission lines is expressed by the following equation.

According to telecommunications engineering, the transmission coefficient (S _21α ) of a lossy transmission line, that is, a lossy line is expressed by the following equation.

According to electromagnetics, the practical transmission line attenuation constant is determined by the attenuation when the electromagnetic wave travels through a lossy dielectric body, and part of the electromagnetic wave penetrates into the conductor in the course of the electromagnetic wave traveling through the dielectric. It can be considered that this is the sum of the conductor loss and the radiation loss leaking out of the transmission line.

Wiring design of high-speed digital data communication equipment is performed according to telecommunication engineering. However, telecommunications engineering is suitable for transmission line design that handles continuous waves such as sine waves, but as mentioned above, transmission line design that handles intermittent waves such as digital signals is not suitable because of inconsistencies with electromagnetics. .

DC power supplies used in information technology equipment, high-speed digital data communication equipment, and the like are considered to supply electric charges to circuits.

According to electromagnetism, Maxwell modified Coulomb's law, assuming that the force acting on the unit (test) point charge is due to the electric field where the unit point charge exists. This fact is not well known.

According to the modified electromagnetics, the electrostatic energy w _E related to the electric field is expressed by the following equation.

Thus, the electrostatic energy (w _E ) is not carried by the electric charge but is accumulated in the medium as the product of the electric field E and the electric flux density D or the electric field E.

The electrostatic energy w _C stored in the capacitor having the capacitance C to which the voltage V is applied is expressed by the following equation, where d is the electrode distance and S is the electrode area.

For measuring the impedance characteristics of capacitors in a band of several megahertz or more, a network analyzer or a four-terminal impedance analyzer applying the principle of the network analyzer is used. In digital circuits that support IT equipment, capacitors are overwhelmingly often used as decoupling capacitors for power distribution circuits. Capacitors as DUTs (device under test) are connected in parallel to measurement lines. Measured.

The terminal impedance (Z _C ) of the capacitor obtained by the measurement method can be obtained from the transmission coefficient (S ₂₁ ) constituting the scattering matrix by the following equation.

When the characteristic impedance (Z ₀ ) of the measurement system cable is 50 [Ω] and S ₂₁ is considerably smaller than 1, the relationship between Z _C and S ₂₁ is further simplified as in the following equation. This method can be used for an element such as a lossless line or a capacitor whose line length can be regarded as zero, but in the case of a general transmission line, it is estimated from the measurement result of the reflection coefficient (S ₁₁ ) from the relationship of the equation (8). There must be.

When the terminal impedance is very small as compared with the characteristic impedance of the measurement system cable as in the case of the capacitor, the error is reduced by obtaining from the equation (12). However, since the expression (12) is an expression that is established when the capacitor is regarded as an element of a lumped element circuit in which the action of electromagnetic waves is ignored, the action of the electromagnetic waves cannot be ignored in a circuit of a general size. Note that it does not hold.

When the impedance characteristic is obtained by substituting the measured value of the transmission coefficient (S ₂₁ ) into the equation (12), a commercially available capacitor is said to have a frequency at which the impedance called a resonance point is minimized. In the frequency band below the resonance point, it shows an almost ideal impedance characteristic in which the impedance value decreases in proportion to the frequency, but it is confirmed that it shows a reactance characteristic in which the impedance increases in proportion to the frequency above the resonance frequency. . The reason for this is thought to be that a capacitor has lead wires, terminals, and electrodes, and this portion acts as an equivalent series inductance (ESL). Furthermore, the impedance at the resonance point is considered to be determined by the equivalent series resistance (ESR).

Examining the resonance point of the impedance characteristic obtained from Equation (12) according to electromagnetics, the resonance point is the upper limit at which the capacitor can be regarded as a lumped element model, and the characteristic above the resonance point is the physical arrangement of the capacitor and the measurement circuit. It can be seen that the characteristic shows the behavior of the electromagnetic wave related to the size.

In the design and analysis of electric and electronic circuits, the power source is treated as an ideal power source having zero terminal impedance and transmission coefficient in the frequency band handled by the electric and electronic circuit. However, since an actual power source is a commercial power source, a battery, or a power converter that uses the action of inductance, it cannot be regarded as an ideal power source. For this reason, a capacitor is used to make an actual power supply an ideal power supply. However, since the capacitor is an element of a lumped element model, as a single capacitor, an operation at about 1 MHz or higher where the action of electromagnetic waves cannot be ignored in a general size circuit is not considered.

In spite of the above, capacitor manufacturers and information technology equipment related manufacturers have devised various ways to use capacitors based on the above-described conventional concept. The power supply layer and the ground layer of the printed wiring board employ a parallel plate structure in order to minimize a DC voltage drop and to realize a low impedance in a band of gigahertz or higher, which is impossible with a capacitor. However, when mounting hundreds or more capacitors on a board, the method of determining the optimal capacitance value, size, and optimal placement of individual capacitors is so complex that it is impossible even with a high-performance computer. There is not established even now.

Capacitor manufacturers are working to improve capacitors themselves to reduce ESL and ESR. However, in electrolytic capacitors, the focus is on higher capacity and lower ESR, and in ceramic capacitors, focus is on miniaturization and slightly higher ESR, leading to improvements that take electromagnetic behavior into consideration. Not in.

According to the isolated electromagnetic wave concept shown in Non-Patent Document 1 and Non-Patent Document 2, the switching element excites an isolated electromagnetic wave, which is a kind of nonlinear wave or soliton, at the moment of switching. A switching element of a general switching device excites a solitary electromagnetic wave, which is a kind of nonlinear wave or soliton, at the moment of switching by the same mechanism.

The excitation mechanism of isolated electromagnetic waves during the switching operation of the switching element is caused by suddenly opening a gate for storing water in various experiments conducted by John Scott Russell in 1834 when he discovered solitons. It is very similar to the generation mechanism of solitons and the tsunami generation process that has been confirmed to be a kind of solitons.

According to the isolated electromagnetic wave concept shown in Non-Patent Document 1 and Non-Patent Document 2, at the moment when the switching element switches from off to on, the potential at the point where the switching element connects the power line and the signal line is The voltage is a value obtained by dividing the characteristic impedance of the power line and the signal line. Therefore, isolated electromagnetic waves with a polarity that lowers the voltage to the divided voltage are excited on the power line, and isolated electromagnetic waves with a polarity that raises the voltage to the divided voltage are excited simultaneously on the signal line, and the isolated amplitude vectors are orthogonal to each other according to the electromagnetic wave theory. It travels on the transmission line with electric field waves and solitary magnetic field waves.

FIG. 1 is an example of an equivalent circuit related to a push-pull circuit 1 for explaining the behavior of an isolated electromagnetic wave. In Figure 1, a push-pull circuit 1 is connected to the middle of the transmission line of the characteristic impedance Z _0, the power supply line 5 of the characteristic impedance Z ₀ is connected between the DC power source 4 and the push-pull circuit 1 supply line The signal line 6 having the characteristic impedance Z ₀ is connected between the push-pull circuit 1 and the matching termination resistor 7 to form a signal line. Push-pull circuit 1 is a P-channel MOS
It consists of FET2 and N-channel MOS FET3.

In FIG. 1, the on state of the push-pull circuit 1 is a state where the P-channel MOS FET 2 is on and the N-channel MOS FET 3 is off, and the push-pull circuit 1 is off. The relationship between the magnetic field and the current and the relationship between the electric field and the potential with respect to the TEM wave traveling through the transmission line are shown as the amperage law and the definition of the potential in electromagnetics, respectively.

FIG. 2 shows a potential waveform 9 on the signal line 6 when the push-pull circuit 1 changes from off to on, and an electric field waveform 8 that travels on the signal line 6 obtained by calculating backward from the definition of the potential shown in electromagnetics. It shows. FIG. 3 shows a potential waveform 11 on the power supply line 5 when the push-pull circuit 1 changes from off to on, and an electric field waveform 10 that travels on the power supply line 5 obtained by calculating backward from the definition of the potential shown in electromagnetics. It shows.

As shown in FIGS. 2 and 3, the waveform of the electric field generated by the switching of the push-pull circuit 1 is the product of the rise time and the circumference obtained by regarding the tangent of the maximum slope of the rising waveform of the switching element as the rising waveform. It approximates to a half waveform of a sine wave having an effective frequency defined by the frequency obtained as the reciprocal of. To quote the concept of effective frequency, the accuracy of the approximation is expected to be 92% or more. Therefore, practically, it can be performed at an effective frequency as far as design is concerned.

1 to 3, when the push-pull circuit 1 changes from off to on, the potentials at the points B and C in FIG. 1 are equal to E / 2 [V]. The isolated electric field wave 8 traveling on the signal line 6 having opposite polarities and the isolated electric field wave 10 traveling on the power supply line 5 excited by the push-pull circuit 1 travel in opposite directions with the push-pull circuit 1 as the back. . The isolated electric field wave 8 traveling on the signal line 6 proceeds while increasing the potential of the signal line 6 from 0 [V] to E / 2 [V], and disappears by the matching termination resistor 7. On the other hand, the isolated electric field wave 10 traveling on the power line 5 insulates each transmission line toward the DC power source 4 while lowering the potential of the power line 5 from E [V] to E / 2 [V]. It travels through the body at quasi-light speed.

When the DC power supply 4 is an ideal power supply with zero terminal impedance, the isolated electromagnetic wave traveling on the power supply line 5 is reflected by the DC power supply 4 and has the same polarity as the isolated electromagnetic wave excited on the signal line 6. 5 and the potential of the signal line 6 are increased from E / 2 [V] to E [V], and disappear with the matching termination resistor 7.

According to Non-Patent Document 1 and Non-Patent Document 2, the wavelength of an isolated electromagnetic wave traveling on the transmission line is defined by the following equation.

Conventional power supply decoupling circuits or circuit components are described in the following patent documents and non-patent documents. The point will be described later.
JP 2002-260965 (P2002-260965A) JP-A-2005-294449 (P2005-294499A) JP2007-42732 (P2007-42732A) JP 2002-164760 (P2002-164760A) JP-A-2004-048650 (P2004-048650A) Hirokazu Tohya and Noritaka Toya "A NovelDesign Methodology of the On-Chip Power Distribution Network Enhancing the Performance and Suppressing EMI of the SoC", IEEE International Symposium on Circuits and Systems 2007, pp. 889-892, May 2007. Hirokazu Toya, Norio Naoya Toya "New design method of on-chip power distribution circuit that greatly improves SoC performance and EMC", IEICE Technical Report, Vol.107, No.149, EE2007-20, pp .73-78, July 2007.

The first problem to be solved relates to Patent Document 1. Patent Document 1 discloses a detailed manufacturing method for a solid electrolyte layer in order to provide a method for manufacturing a solid electrolytic capacitor capable of obtaining a solid electrolytic capacitor having good characteristics by a simple manufacturing process. However, the purpose of the improvement is to reduce ESR, and it has been impossible to approximate the function of an ideal power source expected for a capacitor by the disclosed technology.

A second problem to be solved relates to Patent Document 2. Patent Document 2 discloses a detailed manufacturing method related to a solid electrolyte layer in order to provide a method for manufacturing a solid electrolytic capacitor capable of improving capacitance and withstand voltage and reducing the size and capacity. However, the purpose of the improvement is to increase the capacitance and withstand voltage and to increase the size and capacity, and it has been impossible to approximate the function of an ideal power source expected for a capacitor by the disclosed technology.

A third problem to be solved relates to Patent Document 3. Patent Document 3 discloses a detailed manufacturing method for a solid electrolyte layer including a separator in order to provide a solid electrolytic capacitor having a large capacity, low ESR, and high reliability. However, the purpose of the improvement is large capacity, low ESR, and high reliability, and it has been impossible to approach the function of an ideal power source expected for a capacitor by the disclosed technology.

A fourth problem to be solved relates to Patent Document 4. Patent Document 4 shows a method of forming a distributed constant noise filter used in a band between 10 KHz and 1 GHz. The length of the distributed constant type noise filter is set so as to be at least a quarter wavelength of a high frequency generated from an electronic component. For example, a harmonic of 100 [MHz], that is, a quarter of a sine wave is used. The wavelength is 75 [cm] in the atmosphere, and in the case of aluminum oxide used as an insulator in this document, the relative dielectric constant is about 8.5, so it is 26 [cm]. Too long to use. In addition, since the input impedance characteristic of the line makes a theoretical error in determining where the transmission coefficient (S ₂₁ ) should be obtained from the measured value of the reflection coefficient (S ₁₁ ) or the equivalent electromagnetic field simulation value, the reliability of the data There is no sex. Therefore, it has been impossible to approximate the function of an ideal power source expected for a capacitor by the disclosed technique.

The fifth problem to be solved relates to Patent Document 5. Patent Document 7 shows the structure of an electrode in detail in order to provide a parallel plate line type element suitable for higher speed and higher frequency, but shows a physical constant of a material used and a manufacturing method related to a solid electrolyte layer. It has not been. Therefore, there is no support for the expected transmission coefficient (S ₂₁ ) characteristics. With the disclosed technology, it has been impossible to approximate the function of an ideal power source expected for a capacitor.

In analog circuits, changes in the circuit state are relatively gradual and the beginning and end are often unclear. Analog circuits have a long history, and especially in engineering, there are almost no problems in practical use in circuit design according to conventional AC circuit theory or telecommunications engineering without having to return to electromagnetism by applying rules of thumb, etc. It was.

On the other hand, unlike the case of the analog circuit, the beginning and end of the state change in the switching circuit are clear. Changes in the state of the switching circuit are very rapid, and sudden changes in electric or magnetic fields naturally excite large levels of electromagnetic waves. The change in the electric or magnetic field in the switching circuit is intermittent. Furthermore, in a data processing circuit that occupies about 90% of a semiconductor integrated circuit, the switching cycle is generally indefinite.

As described above, the analog circuit and the switching circuit are greatly different from the viewpoint of electromagnetics. However, in conventional telecommunications engineering and AC circuit theory, the design of a circuit that assumes intermittent circuit operation, that is, a pulse circuit, is performed by the above-mentioned method that has nothing to do with electromagnetics, and the analysis is performed using a switching wave. The Fourier transform method has been applied, which is considered as a kind of distorted wave.

According to the Fourier transform method, the distorted wave is composed of a number of harmonics that are sine waves. These harmonics are numerous sine waves with no beginning and no end. If the signal on the circuit is analyzed for each harmonic and the results are added, the switching circuit can be analyzed. However, the Fourier transform method is a mathematical method, and it is not used in the design and analysis of electrical and electronic circuits after confirming the consistency with the higher theory of electromagnetism. The analysis of instantaneous phenomena is impossible because of the large deviation from reality.

For example, when a switching wave having a duty of 1/10 and a repetition frequency of 1 [GHz] is Fourier transformed, it can be decomposed into a DC component having a value of 1/10 of the amplitude and a harmonic having 1 [GHz] as a fundamental wave. If a certain length of wiring or transmission line in a semiconductor integrated circuit using a CMOS circuit that hardly passes direct current has a loss that reduces the amplitude of 1 [GHz] to 1/2, The amplitude of the switching wave at the end of the transmission line is reduced to almost ½ or less in the analysis result.

However, according to electromagnetics, the amplitude of the switching wave is maintained by electrostatic energy supplied from a DC power source. Since electrostatic energy is not a wave, it is not affected by the loss of wiring or transmission lines. Therefore, the amplitude of the switching wave observed at the end of the transmission line should not be attenuated.

The same phenomenon applies to electromagnetic waves traveling on the power supply line. The electromagnetic wave traveling on the power line is not intended at all by the designer of the digital circuit, and the action of the electromagnetic wave on the power line is not preferable. If a switching element or an element having the function of an ideal power supply is connected in the vicinity of a switching element or a circuit incorporating a switching element on a power supply line of a circuit system including a switching element or a circuit incorporating the switching element, the switching power supply The electromagnetic wave excited by the signal does not leak onto the power line of the circuit system, and the signal integrity is not deteriorated.

However, devices such as conventional capacitors that are expected to have this function not only follow the isolated electromagnetic wave concept shown in Non-Patent Document 1 and Non-Patent Document 2, but also follow the electromagnetic wave theory established by Maxwell. Therefore, it was impossible to fulfill the function of an ideal power source.

An object of the present invention is to provide means for fundamentally solving the above problems.

In order to solve the above-mentioned problem, an invention according to claim 1 relates to a low impedance loss line, an anode foil and a cathode foil comprising a separator and a valve metal having a dielectric oxide film disposed opposite to the separator. And a solid electrolyte layer made of a conductive polymer obtained by polymerizing a monomer or a monomer solution impregnated between the anode foil and the cathode foil through the separator with an oxidant with a parallel plate line, It is characterized by being formed as.

The invention described in claim 2 relates to a low impedance loss line, and relates to a circuit system including a switching element or a circuit incorporating the switching element. The low impedance loss line according to claim 1 is provided for supplying DC power. Arranged in the vicinity of the switching element or switching element of the power line, the anode foil is inserted in series with the anode wiring of the power line, and the cathode foil is connected in parallel with the cathode wiring of the power line, Alternatively, the anode foil is connected in parallel to the anode wiring of the power supply line, and the cathode foil is inserted in series to the cathode wiring of the power supply line.

The invention described in claim 3 relates to a low impedance loss line, wherein in the low impedance loss line according to claim 1 or 2, the solid electrolyte layer has a conductivity of 100 [S / m] or more. It is characterized by.

The invention described in claim 4 relates to a low impedance loss line, wherein the chip of the parallel plate line structure is at least 10 [MHz] to 1 [GHz]. ] In the band of the circuit system, the characteristic impedance of all lines except the power distribution line in the circuit system is 1/100 or less or 10 [mΩ] or less and 100 [nep / m] (neper / meter) or more It is a low impedance loss line chip having an attenuation constant of

The invention described in claim 5 relates to a low impedance loss line. In the low impedance loss line according to claims 1 to 4, the anode foil is formed at least on a surface in contact with the solid electrolyte layer. Or a tunnel-like etched portion, and a dielectric oxide film is formed on the surface of the etched portion.

The invention described in claim 6 relates to a low impedance loss line. In the low impedance loss line according to claims 1 to 5, the cathode foil is a dielectric formed on at least a surface in contact with the solid electrolyte layer. It has a body oxide film.

The invention described in claim 7 relates to a low impedance loss line. In the low impedance loss line according to claims 1 to 6, the cathode foil includes an arc plasma deposition method on a surface in contact with the solid electrolyte. It is characterized by having a film made of a metal nitride of TiN, ZrN, TaN, or NbN deposited by the method.

The invention described in claim 8 relates to a low impedance loss line, wherein the low impedance loss line chip has a dielectric oxide film and the anode foil, A conductive polyaniline solution is impregnated between the cathode foils, the solvent is removed while applying a voltage to the anode foil to form a conductive polyaniline film, and the conductive polyaniline film is deposited on the dielectric oxide film. And an electrolyte layer made of the conductive polymer is formed on the conductive polyaniline film.

The invention according to claim 9 relates to a low impedance loss line, wherein the valve metal is aluminum in the low impedance loss line according to claims 1 to 8.

The invention described in claim 10 relates to a circuit or a low impedance loss line. In the low impedance loss line according to claims 1 to 9, the monomer used for the polymerization reaction is 3,4-ethylenedioxy. It is characterized by being thiophene.

The invention according to claim 11 relates to a circuit or a low impedance loss line. In the low impedance loss line according to claims 1 to 10, ferric paratoluenesulfonate in which the oxidizing agent is dissolved in butanol. It is characterized by being an aqueous solution of ferric paratoluenesulfonate, periodic acid, or iodic acid dissolved in ethylene glycol.

The invention according to claim 12 relates to a circuit or a low impedance loss line. In the low impedance loss line according to claims 1 to 11, the oxidant solution is added with aerosil.
0 to 1 80 [mpa. s] and a moisture content ranging from 0.5 [wt%] to 5.0 [wt%].

The invention described in claim 13 relates to a circuit or a low impedance loss line. In the low impedance loss line according to claims 1 to 12, the separator is vinylon, aliphatic polyamide, aromatic polyamide (aramid). , Semi-aromatic polyamide, polyethylene naphthalate, polyacrylonitrile, wholly aromatic polyester, wholly aromatic polyester amide, wholly aromatic polyether, wholly aromatic polycarbonate, wholly aromatic polyazomethine, polyphenylene sulfide (
PPS), poly-p-phenylenebenzobisthiazole (PBZT), poly-p-phenylenebenzobisoxazole (PBO), polybenzimidazole (
PBI), polyetheretherketone (PEEK), polyamideimide (PAI), polyimide, polytetrafluoroethylene (PTF)
E), or a nonwoven fabric formed by selecting one or more types of fibers used as a cellulose raw material and having a thickness of 150 [μm] or less.

Further, the invention described in claim 14 relates to a circuit or a low impedance loss line. In the low impedance loss line according to claims 1 to 13, as a binder for the separator, poval or heat fusion which is a wet heat fusion resin is used. It is characterized by using polyester which is a resin.

The invention described in claim 15 relates to a circuit or a low impedance loss line. In the low impedance loss line according to claims 1 to 14, the dielectric oxide film is a polymerization reaction for forming the electrolyte. Before or after the process or after the polymerization reaction process, the film is immersed in a chemical conversion solution for 5 to 120 minutes for chemical conversion or repair chemical conversion.

The invention according to claim 16 relates to a circuit or a low impedance loss line. In the low impedance loss line according to claims 1 to 15, the chemical liquid is ammonium dihydrogen phosphate, diammonium hydrogen phosphate. It is characterized by being a phosphoric acid-based chemical conversion liquid such as ammonium borate, a boric acid-based chemical conversion liquid such as ammonium borate, or an adipic acid-based chemical conversion liquid such as ammonium adipate.

The invention described in claim 17 relates to a circuit or a low impedance loss line. In the low impedance loss line according to claims 1 to 16, the separator is interposed between the anode foil and the cathode foil. The laminated body in a state is added to a ketone solvent such as cyclohexanone, acetone, methyl ethyl ketone or the like before the chemical conversion or polymerization reaction step.
It is characterized by being immersed in a polyimide silicon solution in which [wt%] polyimide silicon is dissolved.

When the present invention based on the isolated electromagnetic wave concept is applied to a component or a printed wiring board, leakage of electromagnetic waves excited by the switching element is greatly suppressed, so that the electromagnetic compatibility (EMC) of the equipment in which the switching element is used (EMC) ) Can be greatly improved.

When the present invention based on the isolated electromagnetic wave concept is applied to a component or a printed wiring board, leakage of electromagnetic waves excited by the switching element is greatly suppressed, so that mixed design of analog circuits and digital circuits becomes easy.

When the present invention based on the isolated electromagnetic wave concept is applied to a component or a printed wiring board, it is used in an information technology device using a high-speed switching element, a digital data communication device, and a direct-current power distribution circuit of a high-frequency DC-DC converter, thereby reducing size and weight Therefore, it is possible to achieve both cost reduction, high conversion efficiency, high signal quality (signal integrity), and high electromagnetic compatibility (EMC).

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, the best embodiment according to the invention will be described in detail with reference to the drawings.

(Embodiment 1)
FIG. 4 is an example of a low impedance loss line.

In FIG. 4, the low impedance loss line is composed of an anode foil 15, dielectric oxide films 16 and 18, a cathode foil 19, a separator and an impregnated solid electrolyte layer 17.

FIG. 5 is an example of an equivalent circuit of a digital basic circuit using a low impedance loss line.

In FIG. 5, an equivalent circuit of a digital basic circuit using a low impedance loss line includes a DC power supply 4, push-pull circuits 1 and 14, a P-channel MOS FET 2 and an N-channel MOS FET 3 constituting the push-pull circuit 1, and a power line. 5 and 12, a low impedance loss line 13, and a signal line 6. In FIG. 10, it is assumed that the characteristic impedances of the power line 5 and the signal line 6 are equal.

In FIG. 5, the definition of the ON state and the OFF state of the push-pull circuit 1 is the same as described above, and the relationship between the electric field on the transmission line and the potential of the transmission line follows electromagnetics.

The potential waveform of the signal line 6 when the push-pull circuit 1 changes from off to on, the isolated electric field waveform traveling on the signal line 6, and the potential waveform of the power line 5 and the isolated electric field waveform traveling on the power line 5 are as follows: Same as above. Therefore, the waveforms of FIGS. 2 and 3 are used to explain the operation of the circuit of FIG.

2, 3, and 5, the state of the isolated electric field wave traveling on the transmission line and the change in the potential of the transmission line when the push-pull circuit 1 changes from off to on are as described above.

In FIG. 5, when the low impedance loss line 13 has a characteristic impedance of 1/100 or less or 10 [mΩ] or less with respect to the signal line 6, it is an ideal power source at the power source side end of the power line 5. The isolated electromagnetic wave traveling on the power line 5 is reflected at the end of the low impedance loss line 13 and excited on the signal line 6 in substantially the same manner as in FIG. It progresses while raising the potential of the power supply line 5 and the signal line 6 from E / 2 [V] to almost E [V], and disappears at the matching termination resistor 7.

However, since the characteristic impedance of the low impedance loss line 13 is not zero, a part of the isolated electromagnetic wave traveling through the power supply line 5 enters the low impedance loss line 13.

The electric field intensity E at a distance r [m] when a linear electromagnetic wave having radiated power P is radiated from the antenna can be obtained from the following equation shown in IEC CISPR 16-2-3.

For example, the permissible value of the interference wave electric field strength at a distance of 10 [m] from a class B information technology device intended for home use is determined by VCCI (CISPR22), and is from 30 [MHz] to 230 [MHz]. 30 [dBμV / m] and 230 [MHz] to 1 [GHz] and 37 [dBμV / m]. From the equation (14), for example, the allowable radiated power value at 230 [MHz] is 2 [nW].

In the equivalent circuit of the digital basic circuit using the low impedance loss line in FIG. 5, the push-pull circuit 1 is provided with 20 power terminals in a semiconductor integrated circuit having a power consumption of 100 [W]. It is assumed that 5 W of power is shared by the terminals, and the characteristic impedance of the low impedance loss line 13 is 1/100 of the characteristic impedance of the power line. At this time, since the potential at the point B or C is 100/101 of the voltage (E [V]) of the DC power supply 4 at the moment when the push-pull circuit 1 is turned on, the potential is almost sufficient for communication. Become. Therefore, there is no degradation of signal integrity due to the influence of the power distribution circuit.

At this time, the isolated electric field wave 8 increases the potential of the signal line 6 from 0 [V] to (100E / 101) [V], and the isolated electric field wave directed to the power supply line 5 sets the potential of the power supply line E [V ] To (100E / 101) [V] is 0.0201, which is about twice the characteristic impedance ratio. Note that the ratio of the amplitude of the isolated electric field wave toward the signal line and the amplitude of the isolated electric field wave toward the power line is about 0.14 because it is the square root of the ratio of the power.

Accordingly, 0.1 [W] electromagnetic energy enters the low impedance loss line 13. 0.1% of the energy of this electromagnetic energy is released into the atmosphere, and the energy of 0.1% is reduced from 230 [MHz] to 1 [GHz] by repeating reflection at many points until it radiates. The electromagnetic energy when it is assumed to exist at one frequency between them is 0.1 [μW], which greatly exceeds the allowable radiated power value 2 [nW] of the class B information technology device.

In the equivalent circuit of the digital basic circuit using the low impedance loss line 13 of FIG. 5, the low impedance loss line 13 has a characteristic impedance 1/100 of the characteristic impedance of the power supply line and an attenuation constant of 1000 [nep / m]. When the effective line length is 8 [mm], the electromagnetic energy entering the low impedance loss line 13 is 0.1 [W] as described above, but the electromagnetic energy transmitted through the low impedance loss line 13 is The transmission coefficient (S ₂₁ ) obtained by substituting the value of the attenuation constant α and the value of the length z (= 8 × 10 ⁻³ ) into the equation (9) is multiplied by 0.1 [W] to 0. 034 [nW], which is significantly lower than the allowable radiated power value 2 [nW] of the class B information technology device. Therefore, according to this patent, even if EMC countermeasure parts and electromagnetic shielding materials are not used in digital equipment, it is considered that no EMC problem will occur.

(Embodiment 2)
FIG. 6 is an example of a prototype low impedance loss line.

The prototype low impedance loss line is composed of a cathode foil 50, an anode foil 51 using a valve action metal, a dielectric oxide film 52, a solid electrolyte layer 53, and a conductive paste layer 54. The valve anode foil 51 is a line. It is pulled out in the long direction. Both ends of the drawn anode foil 51 in the line length direction become anode terminals, and both ends of the cathode foil 50 in the line length direction become cathode terminals.

The prototype low impedance loss line has a width of 1 [mm] and a length of 4 [mm] to 16 [mm]. An aluminum foil that has been etched is used as the anode foil 51. The anode foil 51 has a thickness of 235 [μm], and has a sponge-like etching process with a thickness of about 50 [μm] on both sides, and an aluminum oxide with a thickness of about 10 [nm] on the etched surface. A film is formed by chemical conversion treatment, and the etched portion is impregnated with polypyrrole, which is a solid electrolyte.

Carbon graphite is applied to a thickness of about 30 [μm] on polypyrrole, and a silver paste of about 50 [μm] is applied thereon, and a cathode foil of a copper plate is adhered. The effective conductivity of polypyrrole is assumed to be 1.5 × 10 ⁴ [S / m], and the relative dielectric constant of aluminum oxide used as an insulator is assumed to be 8.5.

Figure 7 is an example of the frequency characteristics of the transmission coefficient S ₂₁ of the low impedance loss line prototyped.

Figure 7 is a length of the portion of the loss line having a low impedance 4 [mm], 8 [mm ], S 21 characteristics are shown when the 16 [mm] and 24 [mm]. For lengths of 16 [mm] and 24 [mm], the width is 1 [mm]
When the width is 1.5 [mm], the length is 4 [mm] and 8 [mm], and the characteristics when the width is 1.5 [mm] are shown. In addition, the characteristics of two conventional chip ceramic capacitors are also shown.

When the capacitance of the parallel plate constituting the loss line having a low impedance is C, the expansion ratio k of the facing area by etching can be obtained from the following equation.

When the frequency is f and the capacitance is C [F], the impedance Z _C of the capacitor is (2πfC) ⁻¹ [Ω], and the capacitor has a characteristic impedance of 50 [Ω].
The transmission coefficient (S _21C ) when connected in parallel to the measurement system line can be obtained from the following equation.

Since the prototype low impedance loss line has a parallel plate line structure, the characteristic impedance can be obtained from Equation (7). However, since the line width is expanded by etching, in this embodiment, if wk ^1/2 considering the expansion factor k is used instead of w in the equation (7), a prototype low impedance loss line The characteristic impedance of 9.1 × 10 ⁻⁶ is a very small value.

When the characteristic impedance of the low impedance loss line prototyped and Z _1, the transmission coefficient of the prototype due to the influence of the reflection when connected to the cable 50 [Omega] of the measurement system to a low impedance loss line (S _21R), the following It can be obtained from the formula.

The electrostatic capacitance C _T between the ends when the distance between the ends of the low impedance loss line the prototype was z and C _{T0 / z,} the frequency is the impedance of C _T when the f and Z _T, The transmission coefficient (S _21T ) over a high frequency of 1 [GHz] or higher from the frequency can be obtained from the following equation.

When the conductivity of the insulator constituting the loss line having the characteristic impedance of Z ₁ is infinite and the conductivity of the semiconductor is σ _P , a part of the electromagnetic wave having the impedance Z ₁ traveling through the insulator is a specific impedance. penetrating into the semiconductor having a Z _P. The electromagnetic waves in progress in the semiconductor are electromagnetic waves that are not useful for communication other than TEM waves, and all of them are lost. When the effective conductivity of a semiconductor is defined as the value obtained by correcting the conductivity of the semiconductor with the actual loss-related ratio, the effective conductivity σ
_P1 can be obtained from the following equation.

The attenuation constant α _P1 when the effective conductivity is σ _P1 can be obtained from the following equation.

The approximate transmission coefficient (S _21A ) from the low frequency of the prototype low impedance loss line to the high frequency of 1 [GHz] or more is obtained from the following equation by substituting α _P1 obtained from the equation (23) into S _21α. I can do it.

The transmission characteristics of the prototype low-impedance loss line when the line width is 1 [mm] and _CT0 that forms the inter-terminal capacitance is 5 × 10 ⁻²⁰ [F / m] are obtained as follows. It is done.
In the case of a 4 mm long chip, -36 dB at 100 [kHz], -53 dB at 1 [MHz], -65 dB at 100 [MHz], 100 [MHz]
-84 dB at 1 [GHz] and -102 dB. In the case of an 8 [mm] long chip, -42 dB at 100 [kHz], -58 dB at 1 [MHz], -72 dB at 100 [MHz], 100 [MHz]
-107 dB, and 1 [GHz] is -108 dB. In the case of a 16 [mm] long chip, -48 dB at 100 [kHz], -63 dB at 1 [MHz], -83 dB at 100 [MHz], 100 [MHz]
Becomes -133 dB and 1 [GHz] gives -114 dB. In the case of a 24 [mm] long chip, -51 dB at 100 [kHz], -67 dB at 1 [MHz], -94 dB at 10 [MHz], 100 [MHz]
-138 dB at 1 GHz and -117 dB at [GHz].

These characteristics substantially coincide with the characteristics shown in FIG. The main difference between the actual measurement and the calculation result is that the structure of the etched portion of the aluminum thin film is very complicated. I tried electromagnetic field simulation, but for modeling of the structure of the etching unit is very difficult, at the present state of the art, it is not possible to obtain accurate characteristic impedance and S ₂₁ characteristics by simulation. Therefore, it is considered practical to use Equation (24) in designing a low impedance loss line.

The present invention provides high performance, easy design and shortened design period, reduction in size and weight, and reduction in power consumption of information technology equipment, multimedia equipment incorporating semiconductor integrated circuits and power conversion equipment incorporating switching circuits It is possible to realize cost reduction, elimination or reduction of electromagnetic interference problems, reduction of malfunction due to electromagnetic noise, and improvement of quality and reliability.

FIG. 1 is an example of an equivalent circuit of a digital basic circuit. FIG. 2 shows a potential waveform of the signal line and an isolated electric field waveform traveling on the signal line. FIG. 3 shows a potential waveform of the power supply line and an isolated electric field waveform traveling on the power supply line. FIG. 4 is an example of a low impedance loss line. FIG. 5 is an example of an equivalent circuit of a digital basic circuit using a low impedance loss line. FIG. 6 is an example of a prototype low impedance loss line. Figure 7 is an example of the frequency characteristics of the transmission coefficient S ₂₁ of the low impedance loss line prototyped.

Explanation of symbols

1
, 14 push-pull circuit
2
P-channel MOS transistor
Three
N-channel MOS transistor
Four
DC power supply
Five
12 Power line
6
Signal line
7
Resistor
8
Isolated electric field waves on signal lines
9
Signal line potential waveform
10 Isolated electric field waves on power lines
11 Potential waveform of power supply line
13 Low impedance loss line
15, 51 Anode foil
16, 18, 52 Dielectric oxide film
17 Separator and impregnated solid electrolyte layer
19, 50 cathode foil
53 Solid electrolyte layer
54 Conductive paste layer

Claims (17)

An anode foil and a cathode foil made of a separator, a valve action metal having a dielectric oxide film disposed opposite to the separator, and impregnated through the separator between the anode foil and the cathode foil A low impedance loss line formed by a solid electrolyte layer made of a conductive polymer obtained by polymerizing a monomer or a monomer solution with an oxidizing agent. In a circuit system equipped with a switching element or a circuit incorporating a switching element, the low impedance loss line according to claim 1 is disposed in the vicinity of the switching element or the switching element of a power supply line provided for supplying DC power, The anode foil is inserted in series with the anode wiring of the power line, and the cathode foil is connected in parallel with the cathode wiring of the power line, or the anode foil is connected in parallel with the anode wiring of the power line. The low-impedance loss line, wherein the cathode foil is inserted in series with the cathode wiring of the power line. The low impedance loss line according to claim 1 or 2, wherein the solid electrolyte layer has a conductivity of 100 [S / m] or more. 4. The low impedance loss line according to claim 1, wherein the parallel plate line structure chip includes all of the chips except for the power distribution line in the circuit system in a band of at least 10 [MHz] to 1 [GHz]. A low impedance loss line chip having a characteristic impedance of 1/100 or less or 10 [mΩ] or less and an attenuation constant of 100 [nep / m] (neper / meter) or more with respect to the characteristic impedance of the line. Low impedance loss line 5. The low impedance loss line according to claim 1, wherein the anode foil has a sponge-like or tunnel-like etched portion formed on at least a surface in contact with the solid electrolyte layer, and is formed on a surface of the etched portion. A low impedance loss line characterized in that a dielectric oxide film is formed. 6. The low impedance loss line according to claim 1, wherein the cathode foil has a dielectric oxide film formed on at least a surface in contact with the solid electrolyte layer. 7. The low impedance loss line according to claim 1, wherein the cathode foil is deposited on a surface in contact with the solid electrolyte by a method including an arc plasma deposition method, and the metal is any one of TiN, ZrN, TaN, and NbN. Low impedance loss line characterized by having a film made of nitride 8. The low impedance loss line according to claim 1, wherein the low impedance loss line chip is impregnated with a conductive polyaniline solution between the anode foil and the cathode foil having a dielectric oxide film, The solvent is removed while applying a voltage to form a conductive polyaniline film, the conductive polyaniline film is deposited on the dielectric oxide film, and the electrolyte layer made of the conductive polymer is formed on the conductive polyaniline film. Low impedance loss line characterized by forming 9. The low impedance loss line according to claim 1, wherein the valve action metal is aluminum. 10. The low impedance loss line according to claim 1, wherein the monomer used for the polymerization reaction is 3,4-ethylenedioxythiophene. The low impedance loss line according to claim 1, wherein the oxidizing agent is ferric paratoluenesulfonate dissolved in butanol, ferric paratoluenesulfonate dissolved in ethylene glycol, periodic acid, or Low impedance loss line characterized by being an aqueous solution of iodic acid 12. The low-impedance loss line according to claim 1, wherein the oxidizer solution is added with aerosil.
0 to 1 80 [mpa. s] and a moisture content ranging from 0.5 [wt%] to 5.0 [wt%], and having a low impedance loss line The low impedance loss line according to any one of claims 1 to 12, wherein the separator is vinylon, aliphatic polyamide, aromatic polyamide (aramid), semi-aromatic polyamide, polyethylene naphthalate, polyacrylonitrile, wholly aromatic polyester, Wholly aromatic polyester amide, wholly aromatic polyether, wholly aromatic polycarbonate, wholly aromatic polyazomethine, polyphenylene sulfide (
PPS), poly-p-phenylenebenzobisthiazole (PBZT), poly-p-phenylenebenzobisoxazole (PBO), polybenzimidazole (
PBI), polyetheretherketone (PEEK), polyamideimide (PAI), polyimide, polytetrafluoroethylene (PTF)
E), or a low-impedance loss line comprising a non-woven fabric formed to a thickness of 150 [μm] by selecting one or more fibers from cellulose raw materials 14. The low impedance loss line according to claim 1, wherein povar which is a wet heat fusion resin or polyester which is a heat fusion resin is used as a binder of the separator. 15. The low impedance loss line according to claim 1, wherein the dielectric oxide film is immersed in a chemical conversion solution for 5 to 120 minutes before or after the polymerization reaction step for forming the electrolyte or after the polymerization reaction step. Low impedance loss line characterized by being formed or repaired 16. The low impedance loss line according to claim 1, wherein the chemical conversion liquid is a phosphate chemical conversion liquid such as ammonium dihydrogen phosphate or hydrogen diammonium phosphate, or a boric acid chemical conversion such as ammonium borate. A low impedance loss line characterized by being an adipic acid-based chemical conversion liquid such as ammonium adipate 17. The low impedance loss line according to claim 1, wherein the laminate with the separator interposed between the anode foil and the cathode foil is cyclohexanone, acetone, methyl ethyl ketone before the chemical conversion or polymerization reaction step. 5 [wt%] to 8 in ketone solvents such as
A low impedance loss line characterized by being immersed in a polyimide silicon solution in which [wt%] polyimide silicon is dissolved.