JP2009262305A - Method and device for cutting single crystal sapphire substrate - Google Patents
Method and device for cutting single crystal sapphire substrate Download PDFInfo
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- JP2009262305A JP2009262305A JP2008116970A JP2008116970A JP2009262305A JP 2009262305 A JP2009262305 A JP 2009262305A JP 2008116970 A JP2008116970 A JP 2008116970A JP 2008116970 A JP2008116970 A JP 2008116970A JP 2009262305 A JP2009262305 A JP 2009262305A
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- 238000005520 cutting process Methods 0.000 title claims abstract description 66
- 239000013078 crystal Substances 0.000 title claims abstract description 50
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 43
- 239000010980 sapphire Substances 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000006061 abrasive grain Substances 0.000 abstract description 9
- 229910003460 diamond Inorganic materials 0.000 description 11
- 239000010432 diamond Substances 0.000 description 11
- 239000007788 liquid Substances 0.000 description 7
- 239000000835 fiber Substances 0.000 description 3
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- FMIAYBZNPVVAAF-UHFFFAOYSA-N [O].[Ti].[C].[Si] Chemical compound [O].[Ti].[C].[Si] FMIAYBZNPVVAAF-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229920006231 aramid fiber Polymers 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000012784 inorganic fiber Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
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Abstract
Description
本発明は、超砥粒ワイヤソーで単結晶サファイヤ基板を（１−１０２）面（ｒ面）と平行、または平行から１度以内の方向に高精度に切断する方法と、その超砥粒ワイヤソー切断装置に関するものである。 The present invention relates to a method of cutting a single crystal sapphire substrate with a superabrasive wire saw with high accuracy in a direction parallel to (1-102) plane (r-plane) or within 1 degree from the parallel, and the superabrasive wire saw cutting. It relates to the device.
単結晶サファイヤは、α−ＡＬ２Ｏ３の単結晶であり、優れた物理的特性、熱的特性、電気的特性、光学的特性を有しているので、耐磨耗部品、耐熱部品、光学部品、電気・電子部品、半導体部品などに広く利用されている。
単結晶サファイヤの結晶構造は稠密六方晶系に属し、図２に示す面方位によると、単結晶のｃ軸に対して直角方向に（０００１）面（ｃ面と称する）が存在し、このｃ軸に平行な（１１−２０）面（ａ面と称する）、ｃ軸に対して一定の角度を有する（１−１０２）面（ｒ面と称する）および（１１−２３）（ｎ面と称する）が存在する。
Single crystal sapphire is a single crystal of α-AL2O3, and has excellent physical characteristics, thermal characteristics, electrical characteristics, and optical characteristics. Therefore, wear-resistant parts, heat-resistant parts, optical parts, electrical -Widely used for electronic parts, semiconductor parts, etc.
The crystal structure of the single crystal sapphire belongs to the dense hexagonal system, and according to the plane orientation shown in FIG. 2, there is a (0001) plane (referred to as c-plane) in a direction perpendicular to the c-axis of the single crystal. (11-20) plane (referred to as a-plane) parallel to the axis, (1-102) plane (referred to as r-plane) and (11-23) (referred to as n-plane) having a certain angle with respect to the c-axis ) Exists.
超砥粒ワイヤソーとしては、芯線にダイヤモンド砥粒を固着した、固定砥粒方式のダイヤモンドワイヤソーが提案された。このダイヤモンドワイヤソーは、切れ味が極めて良好で、しかもスラリーが不要、水溶性又は不水溶性の研削液が利用できるため機械とその周辺の汚れが低減され、作業環境を改善することができる特長がある。しかも、数十Ｋｍ以上の長尺のダイヤモンドワイヤソーを製作できるので、マルチで切断加工が可能であり、スラリーを用いるマルチワイヤソーと比較して数倍以上の切断速度が得られる特長がある。固定砥粒方式のダイヤモンドワイヤソーとしては、ポリエチレン、ナイロン、ポリエステル等からなる素材、若しくはこれら素材をガラス繊維、炭素繊維で補強した材料を芯線とし、この芯線の外周にダイヤモンド砥粒を合成樹脂接着剤又は電着で固着するものが提案されている。
（例えば、特許文献１参照）
また、別のダイヤモンドワイヤソーとしては、炭素繊維、アラミド繊維、アルミナ繊維、ボロン繊維、シリコンカーバイド繊維、若しくはシリコン−チタン−炭素−酸素系無機繊維等のモノフィラメント又はマルチフィラメントを芯線とし、この芯線の外周にダイヤモンド砥粒をメッキ又は合成樹脂バインダーで固着したものが提案されている。
（例えば、特許文献２参照）
As a superabrasive wire saw, a diamond wire saw of a fixed abrasive system in which diamond abrasive grains are fixed to a core wire has been proposed. This diamond wire saw has a very good sharpness, no slurry required, and water-soluble or water-insoluble grinding fluid can be used, so that dirt on the machine and its surroundings is reduced and the working environment can be improved. . Moreover, since a diamond wire saw having a length of several tens of kilometers or more can be manufactured, it can be cut with a multi-piece, and has a feature that a cutting speed several times or more can be obtained as compared with a multi-wire saw using slurry. The fixed abrasive diamond wire saw is made of polyethylene, nylon, polyester, or the like, or a material reinforced with glass fiber or carbon fiber. The core wire has diamond abrasive grains on the outer periphery of the core wire. Or what adheres by electrodeposition is proposed.
(For example, see Patent Document 1)
As another diamond wire saw, a carbon fiber, an aramid fiber, an alumina fiber, a boron fiber, a silicon carbide fiber, or a monofilament or a multifilament such as a silicon-titanium-carbon-oxygen-based inorganic fiber is used as a core wire, and the outer periphery of the core wire A diamond abrasive grain fixed by plating or a synthetic resin binder has been proposed.
(For example, see Patent Document 2)
これらの超砥粒ワイヤソーは、一例として図３に示される切断装置に用いることができる。超砥粒ワイヤソー切断装置は、多数本の超砥粒ワイヤソーを被加工物に押しつけて超砥粒ワイヤソーを往復走行させながら、被加工物を一度に多数枚にスライシングする装置である。単結晶サファイヤのみならず、大直径のシリコンゴットからのシリコンウエハのスライシングや、フェライト、ネオジウム磁石などの磁性材料の切断加工、光学ガラスの切断加工に超砥粒ワイヤソー切断装置を用いることが試みられている。
具体的には図３に示すように、メインローラ５と６の外周面には被加工物の切断寸法に応じて溝が設けられている。超砥粒ワイヤソー１はリール２と９の外周面に巻かれている。一方のリール２からガイドローラ３と４を経由して取り出さた超砥粒ワイヤソー１は、メインローラ５と６の溝に順次巻き付けられ、ガイドローラ７と８を経由して、他方のリール９に巻き取られる。超砥粒ワイヤソー１をリール２と９との間で往復走行させながら、多数本の超砥粒ワイヤソー１を被加工物１０に押しつけて被加工物１０を一度に多数枚に切断加工する。このとき、メインローラ５と６の溝にはノズル１１と１２から研削液が供給される。
These superabrasive wire saws can be used in the cutting apparatus shown in FIG. 3 as an example. A superabrasive wire saw cutting device is a device that slices a workpiece into a plurality of pieces at a time while pressing a number of superabrasive wire saws against the workpiece and reciprocating the superabrasive wire saw. Attempts have been made to use superabrasive wire saw cutting equipment not only for single crystal sapphire, but also for slicing silicon wafers from large diameter silicon gots, cutting magnetic materials such as ferrite and neodymium magnets, and cutting optical glass. ing.
Specifically, as shown in FIG. 3, grooves are provided on the outer peripheral surfaces of the
単結晶サファイヤ基板の切断方法についての先行文献としては、（０００１）面（ｃ面）を主面とする、単結晶サファイヤ基板の切断方法が知られている。
（例えば、特許文献１参照）
As a prior document on a method for cutting a single crystal sapphire substrate, a method for cutting a single crystal sapphire substrate having a (0001) plane (c-plane) as a main surface is known.
(For example, see Patent Document 1)
超砥粒ワイヤソーを用いて単結晶サファイヤ基板を切断する場合、遊離砥粒方式のワイヤソーに比べて、被削性の良好な結晶面に沿って切断が進み、切断精度に大きく影響する傾向が見られる。例えば、超砥粒ワイヤソーを用いて単結晶サファイヤを（１−１０２）面（ｒ面）に対して平行から１度以内に切断する場合、超砥粒ワイヤソーの走行方向を結晶面に対して任意な方向に設定すると平行に切断できない問題が発生した。
そこで、この発明の目的は、単結晶サファイヤ基板の超砥粒ワイヤソーによる切断加工において、（１−１０２）面（ｒ面）に対して平行から１度以内の方向に高精度な切断加工を可能にする切断加工法と、その切断装置を提供するものである。
When cutting a single crystal sapphire substrate using a superabrasive wire saw, the cutting progresses along a crystal surface with good machinability compared to a loose-abrasive wire saw, and there is a tendency to greatly affect the cutting accuracy. It is done. For example, when cutting a single crystal sapphire within 1 degree from parallel to the (1-102) plane (r-plane) using a superabrasive wire saw, the traveling direction of the superabrasive wire saw is arbitrary with respect to the crystal plane When set in a different direction, there was a problem that cutting was not possible in parallel.
Accordingly, an object of the present invention is to enable high-accuracy cutting in a direction within 1 degree from parallel to the (1-102) plane (r-plane) in cutting with a superabrasive wire saw on a single crystal sapphire substrate. The present invention provides a cutting method and a cutting device for the same.
この発明に従った単結晶サファイヤ基板の切断方法は、超砥粒ワイヤソーによる、（１−１０２）面（ｒ面）を主面とする単結晶サファイヤ基板の切断方法であって、超砥粒ワイヤソーの切り込み方向が（１−１０２）面（ｒ面）に対して平行から１度以内で、超砥粒ワイヤソーの走行方向が（１１−２０）面（ａ面）に対して平行から５度以内であることを特徴とする超砥粒ワイヤソーによる単結晶サファイヤ基板の切断方法である。
ここで、（１−１０２）面（ｒ面）を主面とするとは、ｒ面と平行、またはｒ面と平行から１度以内の角度を有する単結晶サファイヤ基板をいう。
A method for cutting a single crystal sapphire substrate according to the present invention is a method for cutting a single crystal sapphire substrate having a (1-102) plane (r-plane) as a main surface by using a superabrasive wire saw. Cutting direction is within 1 degree from parallel to the (1-102) plane (r-plane), and the traveling direction of the superabrasive wire saw is within 5 degrees from parallel to the (11-20) plane (a-plane). A method for cutting a single crystal sapphire substrate with a superabrasive wire saw.
Here, the (1-102) plane (r-plane) being a main plane refers to a single crystal sapphire substrate having an angle parallel to the r-plane or having an angle within 1 degree from the parallel to the r-plane.
また、この発明に従った単結晶サファイヤ基板の切断装置は、単結晶サファイヤの切断に用いる超砥粒ワイヤソー切断装置であって、上記単結晶サファイヤを保持する手段と、上記単結晶サファイヤの（１−１０２）面（ｒ面）を超砥粒ワイヤソーの切り込み方向に対して平行から１度以内にセッティングする手段と、上記単結晶サファイヤの（１１−２０）（ａ面）を超砥粒ワイヤソーの走行方向に対して平行から５度以内にセッティングする手段とを有することを特徴とする超砥粒ワイヤソー切断装置である。 A single crystal sapphire substrate cutting device according to the present invention is a superabrasive wire saw cutting device used for cutting a single crystal sapphire, the means for holding the single crystal sapphire, and (1 -102) means for setting the plane (r-plane) within 1 degree from parallel to the cutting direction of the superabrasive wire saw, and (11-20) (a-plane) of the single crystal sapphire It has a means for setting within 5 degrees from parallel to the running direction.
超砥粒ワイヤソーの切り込み方向が（１−１０２）面（ｒ面）に対して平行から１度以内で、超砥粒ワイヤソーの走行方向が（１１−２０）面（ａ面）に対して平行から５度以内に設定することによって、（１−１０２）面（ｒ面）を主面とする単結晶サファイヤ基板を高精度に切断加工することができる。 The cutting direction of the superabrasive wire saw is within 1 degree from parallel to the (1-102) plane (r-plane), and the traveling direction of the superabrasive wire saw is parallel to the (11-20) plane (a-plane). Is set within 5 degrees, the single crystal sapphire substrate having the (1-102) plane (r-plane) as the main surface can be cut with high accuracy.
この発明の単結晶サファイヤ基板の切断方法の特徴は、超砥粒ワイヤソーによる、（１−１０２）面（ｒ面）を主面とする単結晶サファイヤ基板の切断方法であって、超砥粒ワイヤソーの切り込み方向が（１−１０２）面（ｒ面）に対して平行から１度以内で、超砥粒ワイヤソーの走行方向が（１１−２０）面（ａ面）に対して平行から５度以内であることである。
その切断方法の概略図が図１である。この場合において、事前に方位測定器で測定された（１１−２０）（ａ面）と直交する軸方向（ａ軸）を測定しておき、この軸と超砥粒ワイヤソーの走行方向が直角に設定されている。超砥粒ワイヤソーがａ軸に対して直角とは、この基準軸と超砥粒ワイヤソーが完全に直交する方向から５度以内であることが望ましく、２度以内であることがより好ましい。さらに、超砥粒ワイヤソーの切り込み方向が（１−１０２）面（ｒ面）に対して平行に設定されて切断加工が行われる。
超砥粒ワイヤソーの走行方向を結晶面に対して任意な方向に設定すると（１−１０２）面（ｒ面）に対して平行に切断できない原因としては以下のことが考えられる。例えば、（１１−２０）面（ａ面）以外の任意の面を超砥粒ワイヤソーの走行方向と平行な面になるようにして切り込むと、（１１−２３）面（ｎ面）や（０００１）面（ｃ面）に沿って超砥粒ワイヤソーが切り込まれるため切断精度が低下するものと考えられる 。
A feature of the method for cutting a single crystal sapphire substrate according to the present invention is a method for cutting a single crystal sapphire substrate having a (1-102) plane (r-plane) as a main surface using a superabrasive wire saw. The cutting direction is within 1 degree from parallel to the (1-102) plane (r-plane), and the traveling direction of the superabrasive wire saw is within 5 degrees from parallel to the (11-20) plane (a-plane). It is to be.
A schematic diagram of the cutting method is shown in FIG. In this case, an axial direction (a-axis) orthogonal to (11-20) (a-plane) measured in advance by an orientation measuring device is measured, and the traveling direction of this axis and the superabrasive wire saw is perpendicular to each other. Is set. The superabrasive wire saw being perpendicular to the a-axis is preferably within 5 degrees from the direction in which the reference axis and the superabrasive wire saw are completely orthogonal, and more preferably within 2 degrees. Further, the cutting direction of the superabrasive wire saw is set parallel to the (1-102) plane (r-plane), and cutting is performed.
If the traveling direction of the superabrasive wire saw is set to an arbitrary direction with respect to the crystal plane, the following may be considered as reasons why the superabrasive wire saw cannot be cut parallel to the (1-102) plane (r-plane). For example, when any surface other than the (11-20) plane (a-plane) is cut so as to be a plane parallel to the traveling direction of the superabrasive wire saw, the (11-23) plane (n-plane) and (0001 ) Since the superabrasive wire saw is cut along the plane (c-plane), the cutting accuracy is considered to be lowered.
また、この発明の単結晶サファイヤ基板の切断装置の特徴は、単結晶サファイヤの切断に用いる超砥粒ワイヤソー切断装置であって、上記単結晶サファイヤを保持する手段と、上記単結晶サファイヤの（１−１０２）面（ｒ面）を超砥粒ワイヤソーの切り込み方向に対して平行から１度以内にセッティングする手段と、上記単結晶サファイヤの（１１−２０）（ａ面）を超砥粒ワイヤソーの走行方向に対して平行から５度以内にセッティングする手段とを有することである。
切断装置としては、例えば、図３に示される切断装置に用いることができる。この超砥粒ワイヤソー切断装置は、多数本の超砥粒ワイヤソーを被加工物に押しつけて超砥粒ワイヤソーを往復走行させながら、被加工物を一度に多数枚に切断加工が可能な装置であり、特に、高能率な切断加工が要求される場合には最も適切である。
また、超砥粒ワイヤソーで単結晶サファイヤ基板を切断するには、不水溶性加工液よりも、水溶性加工液を用いるほうが高い切断速度が得られるので適当である。不水溶性加工液を用いると切断速度が低下する原因としては、不水溶性加工液の優れた潤滑性により、ダイヤモンド砥粒が被加工物（単結晶サファイヤ）の表面を上滑りするためと考えられる。
Also, the single crystal sapphire substrate cutting device according to the present invention is characterized by a superabrasive wire saw cutting device used for cutting a single crystal sapphire, the means for holding the single crystal sapphire, and (1 -102) means for setting the plane (r-plane) within 1 degree from parallel to the cutting direction of the superabrasive wire saw, and (11-20) (a-plane) of the single crystal sapphire And means for setting within 5 degrees from parallel to the traveling direction.
As the cutting device, for example, the cutting device shown in FIG. 3 can be used. This superabrasive wire saw cutting device is a device that can cut multiple workpieces at a time while pressing the superabrasive wire saw against the workpiece and reciprocating the superabrasive wire saw. In particular, it is most suitable when a highly efficient cutting process is required.
Also, for cutting a single crystal sapphire substrate with a superabrasive wire saw, it is appropriate to use a water-soluble processing liquid rather than a water-insoluble processing liquid because a higher cutting speed can be obtained. The reason why the cutting speed decreases when using a water-insoluble processing liquid is considered to be because the diamond abrasive grains slide on the surface of the workpiece (single crystal sapphire) due to the excellent lubricity of the water-insoluble processing liquid. .
直径０．１８ｍｍのピアノ線からなる芯線に、平均砥粒径４２μｍのダイヤモンド砥粒をレジンボンドで固着したダイヤモンドワイヤソーを用いて単結晶サファイヤの切断実験を行った。以下の切断条件において、超砥粒ワイヤソーの切り込み方向が（１−１０２）面に平行で、超砥粒ワイヤソーの走行方向が（１１−２０）面に平行の場合（本発明）と、垂直の場合（従来例）を比較して本発明の効果を確認した。
(切断条件)
被加工物：単結晶サファイヤ
被加工物サイズ：φ５０ｍｍ−Ｌ３０ｍｍ
超砥粒ワイヤソー切断機：タカトリ製
メインローラ間隔：５７０ｍｍ
超砥粒ワイヤソー線速度：４００ｍ／ｍｉｎ
超砥粒ワイヤソー走行方向：往復走行
ワーク切り込み速度：ａｖｅ０．１ｍｍ／ｍｉｎ
超砥粒ワイヤソーのテンション：３５Ｎ
加工液：水溶性加工液
単結晶サファイヤを切断して基板とし、その基板の切断方向のうねりを測定した。測定片は手前側、中央、奥側から各３枚(計９枚)をサンプルとした。そのテスト結果を表１に示す。
A single crystal sapphire cutting experiment was conducted using a diamond wire saw in which diamond abrasive grains having an average abrasive grain size of 42 μm were fixed to a core wire made of a piano wire having a diameter of 0.18 mm with a resin bond. In the following cutting conditions, when the cutting direction of the superabrasive wire saw is parallel to the (1-102) plane and the traveling direction of the superabrasive wire saw is parallel to the (11-20) plane (invention), it is perpendicular to The effect of the present invention was confirmed by comparing cases (conventional examples).
(Cut condition)
Workpiece: Single crystal sapphire Workpiece size: φ50mm-L30mm
Super-abrasive wire saw cutting machine: made by Takatori
Main roller spacing: 570mm
Super-abrasive wire saw wire speed: 400 m / min
Superabrasive wire saw traveling direction: Reciprocating workpiece cutting speed: ave 0.1 mm / min
Tension of superabrasive wire saw: 35N
Processing liquid: A water-soluble processing liquid single crystal sapphire was cut into a substrate, and the waviness in the cutting direction of the substrate was measured. Three test pieces (nine in total) from the front side, center, and back side were used as samples. The test results are shown in Table 1.
表１から明らかなように、超砥粒ワイヤソーの走行方向を（１１−２０）面（ａ面）に平行方向にすることにより、切断精度が向上することが判明した。ａ面と１０度の方向では明らかに切断面のうねりが大きくなっている。しかしながら、１〜５度の方向では、平行の場合との差異が認められなかったので、高精度に切断するには５度以内が好ましいと考えられる。 As is clear from Table 1, it was found that the cutting accuracy is improved by making the traveling direction of the superabrasive wire saw parallel to the (11-20) plane (a-plane). The waviness of the cut surface is clearly large in the direction of 10 degrees with the a-plane. However, in the direction of 1 to 5 degrees, a difference from the parallel case was not recognized, and therefore it is considered that 5 degrees or less is preferable for cutting with high accuracy.
１ 超砥粒ワイヤソー
２，９ リール
３，４，７，８， ガイドローラ
５，６ メインローラ
１０ 被加工物
１１，１２ ノズル
1 Super
Claims (2)
超砥粒ワイヤソーの切り込み方向が（１−１０２）面（ｒ面）に対して平行から１度以内で、
超砥粒ワイヤソーの走行方向が（１１−２０）面（ａ面）に対して平行から５度以内であることを特徴とする、超砥粒ワイヤソーによる単結晶サファイヤ基板の切断方法。 A method for cutting a single crystal sapphire substrate having a (1-102) plane (r-plane) as a main surface by a superabrasive wire saw,
The cutting direction of the superabrasive wire saw is within 1 degree from parallel to the (1-102) plane (r-plane),
A method of cutting a single crystal sapphire substrate with a superabrasive wire saw, wherein the traveling direction of the superabrasive wire saw is within 5 degrees from parallel to the (11-20) plane (a-plane).
上記単結晶サファイヤを保持する手段と、
上記単結晶サファイヤの（１−１０２）面（ｒ面）を超砥粒ワイヤソーの切り込み方向に対して平行から１度以内にセッティングする手段と、
上記単結晶サファイヤの（１１−２０）（ａ面）を超砥粒ワイヤソーの走行方向に対して平行から５度以内にセッティングする手段とを有することを特徴とする、超砥粒ワイヤソー切断装置。 A superabrasive wire saw cutting device used for cutting a single crystal sapphire substrate,
Means for holding the single crystal sapphire;
Means for setting the (1-102) plane (r-plane) of the single crystal sapphire within 1 degree from parallel to the cutting direction of the superabrasive wire saw;
A superabrasive wire saw cutting device comprising means for setting (11-20) (a-plane) of the single crystal sapphire within 5 degrees from parallel to the running direction of the superabrasive wire saw.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102225592A (en) * | 2011-04-27 | 2011-10-26 | 无锡斯达新能源科技有限公司 | Method for improving sapphire crystal ingot bar taking yield |
| KR101139481B1 (en) | 2010-03-25 | 2012-04-30 | 주식회사 크리스탈온 | Method of slicing artificial single crystal corundum ingot |
| CN104786376A (en) * | 2014-01-17 | 2015-07-22 | 日立金属株式会社 | Method of cutting high-hardness material with multi-wire saw |
| KR20170013237A (en) * | 2014-05-28 | 2017-02-06 | 신에쯔 한도타이 가부시키가이샤 | Abrasive grain-fixed wire, wire saw, and method for cutting workpiece |
| JP2020113584A (en) * | 2019-01-08 | 2020-07-27 | 豊田合成株式会社 | Manufacturing method for light-emitting device |
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| JP2002184845A (en) * | 2000-12-15 | 2002-06-28 | Kyocera Corp | Wafer support substrate |
| JP2003320521A (en) * | 2002-05-01 | 2003-11-11 | Allied Material Corp | Method and device for cutting single crystal sapphire substrate |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002184845A (en) * | 2000-12-15 | 2002-06-28 | Kyocera Corp | Wafer support substrate |
| JP2003320521A (en) * | 2002-05-01 | 2003-11-11 | Allied Material Corp | Method and device for cutting single crystal sapphire substrate |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101139481B1 (en) | 2010-03-25 | 2012-04-30 | 주식회사 크리스탈온 | Method of slicing artificial single crystal corundum ingot |
| CN102225592A (en) * | 2011-04-27 | 2011-10-26 | 无锡斯达新能源科技有限公司 | Method for improving sapphire crystal ingot bar taking yield |
| CN104786376A (en) * | 2014-01-17 | 2015-07-22 | 日立金属株式会社 | Method of cutting high-hardness material with multi-wire saw |
| JP2015134390A (en) * | 2014-01-17 | 2015-07-27 | 日立金属株式会社 | Cutting method with multi-wire saw of high-harness material |
| KR20170013237A (en) * | 2014-05-28 | 2017-02-06 | 신에쯔 한도타이 가부시키가이샤 | Abrasive grain-fixed wire, wire saw, and method for cutting workpiece |
| KR102150407B1 (en) | 2014-05-28 | 2020-09-01 | 신에쯔 한도타이 가부시키가이샤 | Abrasive grain-fixed wire, wire saw, and method for cutting workpiece |
| JP2020113584A (en) * | 2019-01-08 | 2020-07-27 | 豊田合成株式会社 | Manufacturing method for light-emitting device |
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| JP5042112B2 (en) | 2012-10-03 |
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