JP2009218300A - Dry etching device and dry etching method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a means for observing an etching state of a semiconductor substrate during a dry etching without spending many hours, and a method of reflecting an observation result thereof to the following etching conditions. <P>SOLUTION: In a parallel flat plate type dry etching device, a camera having a microscope function and a film thickness measurement function is installed inside an electrode opposite to an electrode for mounting the semiconductor substrate, and the etching state of the semiconductor substrate is observed by using this camera. The camera has a vertical movement mechanism, and the electrode of a camera installation side has a shutter mechanism. This shutter closes during an etching so that etching gas or plasma may not be in contact with the camera. The shutter can be opened during the etching so that the semiconductor substrate is observed by using the camera installed inside the electrode. Further, the shutter is formed from the same material as or a similar material to the electrode to be a part of the electrode, and a shutter portion does not disturb any plasma state during the etching. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device manufacturing apparatus, and more particularly to a dry etching apparatus and a dry etching method using the apparatus.

  When creating a semiconductor device that is an active element such as a transistor or a passive element such as a resistor or a capacitor on a semiconductor substrate, a hole such as a contact, via, or trench is formed in the semiconductor substrate, or a wiring layer of the semiconductor substrate or the substrate itself. In this case, a dry etching apparatus is used. With recent miniaturization and densification of semiconductor devices, accurate and fine patterning is required in the dry etching process.

  For example, the I / O (input / output) pad on the front surface from the second surface (hereinafter referred to as the back surface) opposite to the first surface (hereinafter referred to as the front surface) of the semiconductor substrate on which the semiconductor device is formed. In the case where the through hole is formed, the through hole is formed using a dry etching apparatus. Since the through hole is formed in the semiconductor substrate, it is necessary to etch the semiconductor substrate material itself. Examples of the semiconductor substrate include single-element semiconductor materials such as silicon, germanium, and carbon, binary compound semiconductor materials such as gallium arsenide and indium phosphide, and multi-element compound semiconductor materials composed of multi-element compounds. For example, FIG. 3 shows a state in which a silicon semiconductor substrate having a thickness of 300 μm is etched from the back surface to the I / O pad on the front surface side. FIG. 3 shows a state in which the semiconductor (silicon) substrate 101 is etched from the back surface side using the photoresist 106 as a mask, and the insulating film 102 on the front surface side is exposed. The surface-side insulating film 102 is a silicon oxide film, a silicon nitride film, or the like. There is an I / O pad 103 thereabove, and the through hole 105 needs to reach this I / O pad. This is because the I / O pad 103 on the front surface side and the rewiring layer (not shown) formed on the back surface side must be electrically connected through the through hole 105. The I / O pad 103 is usually formed from an aluminum-based film (which may include a barrier metal such as a titanium nitride film) based on aluminum. The thickness of the insulating film 102 is usually 0.5 to 3 microns, and the thickness of the I / O pad 103 is usually 0.3 to 2 microns, so that the thickness of the silicon semiconductor substrate 101 (usually 50 microns). The thickness of the insulating film 102 and the thickness of the I / O pad 103 are very thin compared to the micron m to 1000 μm), and not only the insulating film 102 but also the I / O pad 103 is etched when forming the through hole. There is a possibility that. If the I / O pad 103 which is a conductive layer is etched, it completely penetrates the surface side, and even if a through wiring which is a conductor film is formed after that, the through wiring and the I / O pad 103 are not formed. Conductivity will deteriorate. Further, at this time, since the conduction between the through wiring and the I / O pad 103 is only taken from the thickness portion of the I / O pad 103, the contact resistance may be increased, and the conduction is immediately cut off. As a result, the yield may be reduced and reliability may be affected. Therefore, when the through-hole 105 is etched, it is possible to know when the insulating film 102 appears, or when the I / O pad 103 appears, so that the above problem can be prevented. . As a preventive measure, there is a method in which the semiconductor substrate is taken out from the etching apparatus during the etching and viewed with a microscope. However, since the dry etching apparatus is in a vacuum, it is necessary to break the vacuum to an atmospheric pressure state. As a result, it takes a lot of time to etch the through holes, and the productivity becomes very poor. Moreover, it is only necessary to take out once, but when it is necessary to take out and see many times, more time is required and the productivity is extremely deteriorated.

  As a countermeasure, in Patent Document 1, a room for performing etching and a room for measuring an etching state (etching depth, etc.) are provided separately in the etching apparatus. In this case, the etching state can be known in the middle of etching without breaking the vacuum, so that the entire etching time becomes very long and productivity does not deteriorate extremely, but the semiconductor is transferred from the etching chamber to the measurement chamber. There is a problem in that the substrate must be moved, and the entire etching processing time becomes long. Furthermore, the etching apparatus of Patent Document 1 has a problem that the apparatus becomes considerably large because a measurement chamber must be provided in addition to the etching chamber.

In the etching apparatus disclosed in Patent Document 2, a microscope is attached to the anode electrode, and the etching state of the semiconductor substrate can be observed not only during the etching but also during the etching. However, since this microscope is exposed in a vacuum vessel (etching chamber), the microscope is exposed to an etching atmosphere such as etching gas or plasma during etching, so that the microscope main body and particularly the lens portion of the microscope are deteriorated. There is.
JP2003-133294 JP2000-208482

  In dry etching of a semiconductor substrate, it is problematic to observe the etching state of the semiconductor substrate during the dry etching without taking time, and to reflect the result in the etching conditions. As described above, in a device in which a microscope is installed on the anode electrode of a parallel plate type dry etching apparatus and the etching state of a semiconductor substrate can be observed during etching or during etching, the microscope is always placed in an etching atmosphere. For this reason, the microscope itself is also etched or deteriorated. In particular, microscope lenses are made of glass (the main component is a silicon oxide film, etc.) and transparent polymer materials, so they are easily affected by etching gases such as CF4, C2F6, and C3F8, and the degree of etching and deterioration becomes severe. It is necessary to exchange for a new one regularly.

  In the apparatus in which the etching chamber and the observation chamber are separated, there is no problem of etching and deterioration of the microscope, but there is a problem that the processing time becomes long because the semiconductor substrate is taken in and out of the etching chamber and the observation chamber. In addition, a separate observation room must be installed, resulting in a problem that the apparatus becomes large and the apparatus cost increases.

  The present invention provides an apparatus capable of performing accurate etching of a semiconductor material by observing the dry etching state of the material constituting the semiconductor device each time. That is, in a parallel plate type dry etching apparatus, a camera having a microscope function and a film thickness measuring function is installed inside an electrode (second electrode) opposite to an electrode (first electrode) on which a semiconductor substrate is placed. The etching state of the semiconductor substrate can be observed using this camera. The camera also has a vertical movement mechanism. At the same time, the electrode (second electrode) on the camera installation side has a shutter mechanism. During etching, this shutter is closed so that etching gas and plasma do not come into contact with the camera. In addition, the semiconductor substrate can be observed using a camera in which the shutter is opened during etching and the electrode (second electrode) is installed. Further, since the shutter is made of the same or similar material as the electrode and is a part of the electrode, the shutter portion does not disturb the plasma state during etching.

  When etching a semiconductor substrate (including an insulating film or a metal film formed on a semiconductor substrate, the same shall apply hereinafter), the window that the camera looks into is completely closed by the shutter, and the shutter is also part of the electrode. Therefore, the entire electrode can be used during etching. The etching in-plane uniformity of the semiconductor substrate is almost the same as that of a normal parallel plate electrode without a camera and a shutter, and good etching characteristics can be obtained. As shown in FIG. 3, when the etching of the semiconductor substrate 101 proceeds and the through hole 105 seems to have reached the insulating film 102, the etching is interrupted and the electrode (first electrode) on which the semiconductor substrate 101 is placed The shutter provided on the opposite electrode (second electrode) is opened, and the etching state of the semiconductor substrate is observed using a camera installed inside the electrode. Since the camera also has a microscope function, it can be enlarged or reduced to a desired magnification as required. At this time, since the film thickness measurement function is also provided in the present invention, it is possible to know how much thickness the semiconductor substrate material 101 and the insulating film 102 can be reached later by reaching the I / O pad 103. Thereafter, the shutter is closed again, and the necessary remaining etching is performed, so that it is possible to accurately reach the I / O pad 103 to be nerai.

  The present invention provides an apparatus and a method that enable very precise and accurate etching by installing a camera on an electrode portion of a parallel plate type dry etching apparatus.

  FIG. 1 is a schematic view showing an example of a parallel plate type dry etching apparatus of the present invention. The apparatus shown in FIG. 1 is of a reactive ion etching (so-called RIE) type, and a flat cathode electrode 4 and a flat anode electrode 2 are arranged in parallel in a vacuum vessel (etching chamber) 1. A high frequency power source 8 is connected to the cathode electrode 4 via a matching box 7 and a blocking capacitor 6. A substrate to be etched (semiconductor substrate) 5 which is a sample for performing etching is placed on the cathode electrode 4. The vacuum vessel 1 and the anode electrode 2 are grounded (grounded), and a camera 9 and a shutter 3 having a microscope function are attached inside the anode electrode 2. The shutter 3 can be opened or closed automatically or manually. For example, it can be opened and closed by sliding in the lateral direction (the planar direction of the anode electrode 2). When the shutter 3 is opened, the camera 9 can observe the semiconductor substrate 5 placed on the cathode electrode 4. The camera 9 has a moving mechanism in the vertical direction (a direction perpendicular to the planar direction of the anode electrode 2), and can accurately focus on the semiconductor substrate 5 automatically or manually. For example, since the focal point can be focused on the inside of the through hole 105 shown in FIG. 3, the bottom of the through hole 105, that is, the insulating film 102 and the I / O pad 103 can be observed. Further, since the camera 9 has an optical film thickness measurement function, the thickness of the semiconductor substrate 101 and the thickness of the insulating film 102 in the through hole 105 during the etching can be measured. The output of the camera 9 is connected to a television monitor 10 or a recorder (not shown) installed outside the vacuum vessel 1 so that information obtained from the camera 9 can be monitored. The shutter 3 has an electrode function and is a part of the anode electrode 2. The material of the shutter 3 is usually the same material as that of the anode electrode or a similar material. When the parallel plate electrode is plasma-discharged, the presence of the shutter prevents the plasma state from becoming unstable.

  FIG. 2 is an enlarged view of an example of a portion in which the camera is accommodated in order to explain the state where the camera shown in FIG. 1 is installed in more detail. A camera storage space 29 is provided in an upper electrode (corresponding to an anode electrode in FIG. 1) 22 of a parallel plate, and a camera 26 is stored therein. The camera 26 is supported by a camera support column 30. The camera has microscope function portions 27 and 28 (27 corresponds to an eyepiece lens portion and 28 corresponds to an objective lens portion). The camera 26 includes a vertical movement mechanism 31 that can move the camera unit up and down. A window 25 is provided at the lower part of the camera storage unit 29, and the window can be opened and closed by a shutter 23. In FIG. 2, the window 25 is smaller than the camera storage portion 29, but it may be the same size. When the shutter 23 is closed, the shutter 23 is accommodated in the electrode 22 as shown in FIG. 2, so that the shutter 23 is not only in electrical contact with the electrode 22, The bottom surface of the electrode 22 is almost flat. Thus, since the electrode is integrated with the electrode 22 when the shutter 23 is closed, the plasma is not disturbed by the presence of the shutter even if plasma discharge is performed. The shutter 23 can be opened or closed automatically or manually. A semiconductor substrate 24 is placed on an electrode (lower electrode, which corresponds to the cathode electrode 4 in FIG. 1) 21 opposite to the electrode on which the camera is installed. The etching surface of the semiconductor substrate 24 naturally faces the electrode 22 side where the camera is installed. In order to see the etching state of the pattern of the semiconductor substrate 24 during or before etching, the shutter 23 is opened and the pattern of the semiconductor substrate 24 is viewed from the camera unit. When the image is out of focus, the image is blurred. Using the focusing function provided in the vertical movement mechanism 31 and the microscope units 27 and 28, the image is moved up and down in the direction of the arrow indicated by 32 to perform the focusing. A clear image can be obtained. Since the pattern of the semiconductor substrate 24 is very small (for example, 1 micron or less), the vertical movement mechanism of the present invention is used even when the camera or microscope must be considerably close to the semiconductor substrate 24 to obtain a clear image. Thus, it is possible to extend the camera or microscope further downward from the lower surface of the electrode 22 to bring the camera or microscope closer to the semiconductor substrate 24. It should be noted that the position of the camera, the window, and the position of the semiconductor substrate are preferably arranged at an effective place where the etching state can be most grasped. Control of the camera, the microscope, and the like can be performed using a cable passing through the inside of the support column 30. Since the camera of the present invention also has a film thickness measurement function, not only the film thickness measurement of the flat region of the semiconductor substrate 24 but also the film thicknesses of various materials in a minute region such as the bottom of the through hole are It can be measured in cooperation with the microscope function.

  1 shows a cathode type parallel plate type dry etching apparatus, an anode type parallel plate type dry etching apparatus in which an electrode on which a semiconductor substrate to be etched is placed becomes an anode electrode side. Of course, the present invention can be used.

  As described above, the dry etching apparatus of the present invention has a parallel plate type electrode structure, and a microscopic function is provided inside an electrode opposite to an electrode on which a semiconductor substrate to be etched is placed among two opposing electrodes. And a camera having a film thickness measurement function and a shutter which is a part of the electrode. The purpose of the shutter 3 is to be in a closed state during etching and to be a part of the electrode. The camera 9 is isolated from the etching atmosphere such as etching gas or plasma, and the camera unit or lens unit by etching. It is to prevent the deterioration. Hereinafter, how to use the dry etching apparatus of the present invention will be described with reference to FIG.

  A semiconductor substrate 5 as a substrate to be etched is placed on the cathode electrode 4 in the vacuum vessel 1 of the dry etching apparatus shown in FIG. In FIG. 1, the semiconductor substrate 5 is shown smaller than the cathode electrode 4, but the semiconductor substrate 5 may be as large as the electrode 4 or larger. Further, the periphery of the semiconductor substrate 5 may be fixed by being clamped, or the semiconductor substrate may be vacuum-sucked or electrostatically-sucked. Further, in FIG. 1, the vacuum vessel 1 completely includes the parallel plate electrode and is shown larger than the parallel plate electrode, but may be approximately the same size as the parallel plate electrode. Alternatively, it may be smaller than the parallel plate electrode and may be as large as the semiconductor substrate. If the vacuum vessel 1 is made small, not only the dry etching apparatus can be made small, but also the time for evacuation and the time for breaking the vacuum can be shortened.

  After the semiconductor substrate 5 is placed, the vacuum chamber 1 is evacuated to a desired pressure. The shutter 3 is opened during or before the evacuation, and the surface of the semiconductor substrate 5 is observed using the camera 9. The state of the semiconductor substrate 5 before etching can be observed, or the film thickness of the material in the pattern of the semiconductor substrate to be etched can be measured. The shutter 3 is closed before the etching gas is introduced or plasma is generated before etching. The shutter 3 is positioned as high as possible on the surface of the electrode 2 (the lower surface of the electrode 2 in FIG. 1) as much as possible. If this is not done, the plasma distribution during etching will be non-uniform, and the etching of the semiconductor substrate 5 may also be non-uniform. The shutter is not only a sliding method from the side, but the shutter may be pushed out from the space where the camera part in the electrode is installed toward the window to close the window part. It is preferable that the position (height) is comparable.

  After the shutter 3 is closed, an etching gas is introduced to generate plasma, and a predetermined portion of the semiconductor substrate 5 is etched. At this time, the etching gas is also present on the surface of the electrode 2 (the surface facing the electrode 4) and is exposed to the plasma atmosphere, so the surface of the electrode 2 is also somewhat deteriorated. Therefore, if the shutter 3 is not provided, etching gas and plasma also enter from the electrode window (for example, 25 in FIG. 2), and the camera is made of a polymer material or the like and is etched and deteriorated. In particular, when the lens of the camera unit is made of glass, the lens may be rapidly etched by an etching gas (a lot of CF-based or SF-based gas). In order to prevent this, in the present invention, the shutter 3 is provided and the shutter 3 is closed during etching to completely close the window so that the etching gas or plasma atmosphere does not enter the place where the camera is installed. Of course, it is desirable that the shutter is closed not only during the etching but also when an etching gas or the like that causes the camera to deteriorate exists in the apparatus. When the etching proceeds to some extent and it is desired to observe the etching shape during the etching, the etching is interrupted. That is, the voltage applied to the electrode is cut off to prevent plasma generation, the introduction of the etching gas into the etching chamber (vacuum vessel 1) is cut off, and the remaining etching gas in the etching chamber is evacuated to a vacuum state or nitrogen or the like Inert gas is introduced to make a low pressure state. (The etching atmosphere is excluded.) After making the etching impossible state in this way, the shutter 3 is opened, and the etching state of the semiconductor substrate placed on the counter electrode is observed using a camera. When it is desired to observe the etched shape, not only the camera function but also the microscope function can be used. When the focus is off, use the vertical movement mechanism of the camera to focus on the desired location. Or you may focus using the movement function of only a lens part. The up / down movement mechanism of the camera and the moving function of the lens unit can be performed automatically or manually. In order to obtain a high-magnification image, it is necessary to bring the camera close to the semiconductor substrate, but this can be realized by using the moving mechanism of the camera and the moving function of the lens portion of the present invention. Thus, by using the present invention, it is possible to observe not only the surface of the semiconductor substrate but also the situation inside the through hole as shown in FIG. 3 in detail. Even if the depth of the through hole is as deep as 200 μm to 500 μm, it is possible to see the bottom of the through hole by using the present invention, and whether the etching is performed reliably or is still insufficient. After that, it is possible to determine what etching should be performed (determination of etching time and etching conditions).

  In the present invention, the camera 9 further has a film thickness measuring function. The film thickness measurement function is an optical film thickness measurement function mainly using an optical method. This optical film thickness measurement function is, for example, by irradiating light (including infrared rays, visible rays, ultraviolet rays, and X-rays) and laser light to a place where the film thickness is to be measured, and performing spectral analysis of the reflected light and interference light. The film thickness can be measured. Alternatively, there is a method of measuring the film thickness by ellipsometry. By combining with a microscope, the spot diameter of light can be reduced to 1 micrometer or less, so that the film thickness of a material with an extremely small pattern can be measured. Semiconductor substrate material on silicon oxide film, silicon nitride film, etc. (for example, silicon, germanium, carbon (including diamond), silicon carbide (SiC), various compound semiconductors, polycrystalline / amorphous materials thereof) It is also possible to measure the thickness of the insulating film on aluminum, metal nitride, or semiconductor materials (including amorphous and polycrystalline materials). In the case of the through-hole 105 as shown in FIG. 3, the semiconductor substrate material 101 exists on the insulating film 102 in a state where silicon or the like, which is a semiconductor substrate material, has not yet been completely etched. Since the thickness of the material 101 can be measured and the remaining thickness of the semiconductor substrate material 101 can be etched, an appropriate etching gas and etching conditions (for example, etching power and etching pressure) of the apparatus are selected, and accurate The etching time can be calculated. As a result, the insulating film 102 is excessively etched even if the insulating film 102 is as thin as 0.5 μm to 3 μm (very thin compared to the thickness of the semiconductor substrate (50 to 1000 μm)). The remaining semiconductor substrate 101 can be completely etched, and the time for etching the semiconductor substrate 101 can be determined almost completely. Therefore, the conditions for appropriately etching the insulating film 102 are changed on the way, and the semiconductor substrate 101 is changed. It is also possible to continuously etch the insulating film 102 after etching.

  When resuming the remaining etching, the shutter 3 is completely closed again before applying the etching gas or plasma. In this way, the etching gas is introduced again and plasma etching does not expose the camera or camera lens to a harmful atmosphere, and they are not etched or deteriorated. The camera 9 or the like can be used.

  Even when the semiconductor substrate 101 inside the through hole 105 as shown in FIG. 3 is almost etched, the etching is interrupted and the etching atmosphere is completely eliminated, and then the shutter 3 is opened and the inside of the through hole is observed. Whether the semiconductor substrate 101 is completely etched and the insulating film 102 appears can be observed using a camera. When the semiconductor substrate 101 is completely etched and the insulating film 102 is exposed, the thickness of the insulating film 102 can be accurately known using the film thickness measurement function. Thereafter, the insulating film can be etched by closing the shutter in the same manner as described above. As a result, the insulating film 102 is completely etched and the I / O pad 103 made of aluminum or the like is not excessively etched, and the I / O pad 103 can be exposed at the bottom of the through hole.

  As described above, the semiconductor device having a good etching state can be formed by installing the camera 9 having the microscope and the film thickness measuring function on the parallel plate electrode and providing the shutter function. Moreover, in order to observe the film thickness, etching shape, etc. of the material to be etched, there is no need to install a separate observation chamber that has been used in the past. Alternatively, since it is not necessary to move the semiconductor substrate in a low pressure state, the etching state can be observed in a very short time. For example, the etching is stopped before the shutter is opened and the etching gas is exhausted to be in a vacuum state, but this processing time is extremely short because the etching atmosphere is already in a low pressure state. Further, when the inert gas is added thereafter, the processing time is also extremely short because only the low pressure state is maintained. The time for opening the shutter is also short, and the etching state observation (film thickness measurement, etching shape observation, etc.) can be automatically performed in a very short time. Closing the shutter and then returning to the etching atmosphere again can be done easily and in a short time. From the above, the time required is very short compared with the conventional method, and even if the present invention is used, it does not cause a reduction in the productivity of the apparatus, and the observation result is changed to the subsequent etching conditions (for example, etching time, etching time, etc.). Power, etching gas, and etching pressure), stable and good quality can be maintained, and yield can be improved and yield can be stabilized.

In the above description, it has been stated that the present invention is applied by observing the shape of the through-hole portion and the film thickness measurement in the semiconductor substrate having the through-hole, but this is an example and the present invention. Needless to say, the present invention is generally applicable when a material to be etched is etched using a parallel plate dry etching apparatus. For example, the present invention can be applied to etching of contact holes, vias, insulating films, conductor films, and the like. As the material to be etched, the semiconductor substrate described above (insulating film formed on the semiconductor substrate (for example, silicon oxide film, silicon nitride film, silicon oxynitride film, other inorganic oxide film, other inorganic nitride film, metal Oxide films, metal nitride films, organic insulating films) and conductor films (including silicon films, polycrystalline silicon films, amorphous silicon films, metal films, organic conductor films), as well as ceramics Insulator substrates such as glass and polymer materials (insulator films formed on insulator substrates (for example, silicon oxide films, silicon nitride films, silicon oxynitride films, other inorganic oxide films, other inorganic nitride films, metal oxides) Film, metal nitride film, organic insulating film) and conductor film (including silicon film, polycrystalline silicon film, metal film, organic conductor film), metal and conductor (single crystal, amorphous) , Polycrystalline) Conductor substrates such as copper, metal, conductive inorganic materials and organic conductive materials (insulating films formed on conductive substrates (for example, silicon oxide films, silicon nitride films, silicon oxynitride films, other inorganic oxide films, Other inorganic nitride films, metal oxide films, metal nitride films, organic insulating films) and conductor films (including silicon films, polycrystalline silicon films, metal films, organic conductor films) and the like.

  The present invention can be used in dry etching processes used in the semiconductor industry.

FIG. 1 is a configuration diagram of a dry etching apparatus with a camera built-in shutter according to the present invention. FIG. 2 is a diagram showing details of the camera unit of the present invention installed in parallel plate electrodes of a dry etching apparatus. FIG. 3 is a view showing the structure of the through hole formed in the semiconductor substrate.

Explanation of symbols

1 ... Vacuum container (etching chamber), 2 ... Anode electrode (upper electrode),
3 ... shutter, 4 ... cathode electrode (lower electrode),
5 ... Substrate to be etched (semiconductor substrate), 6 ... Blocking capacitor,
7 ... Matching box, 8 ... High frequency power supply, 9 ... Camera,
10 ... TV monitor, 21 ... lower electrode, 22 ... upper electrode,
23 ... Shutter, 24 ... Semiconductor substrate, 25 ... Window, 26 ... Camera,
27, 28 ... Microscope part, 29 ... Camera storage part, 30 ... Camera support column,
31 ... Vertical movement mechanism, 101 ... Semiconductor substrate, 102 ... Insulating film,
103 ... I / O pad electrode, 104 ... Protective film, 105 ... Through hole

Claims (5)

  In a parallel plate type dry etching apparatus having a first electrode on which a semiconductor substrate to be etched is mounted and a second electrode facing the first electrode in a vacuum chamber, the dry etching apparatus is opened on a part of the second electrode surface. A camera is installed inside the second electrode so that the semiconductor substrate placed on the first electrode can be observed through the window, and the camera has a microscope function and a film thickness measuring device function. A dry etching apparatus, wherein a shutter for opening and closing the window is provided on the second substrate.   The dry etching apparatus according to claim 1, wherein the shutter has an electrode function, and the shutter is a part of the second electrode when the window is closed.   The camera has a moving mechanism in a direction perpendicular to the second electrode surface, and is capable of performing focal position alignment on a semiconductor substrate mounted on the first electrode substrate automatically or manually. Item 3. The dry etching apparatus according to Item 1 or 2. It is the dry etching method performed using the dry etching apparatus in any one of Claims 1-3, Comprising: The state which mounted the semiconductor substrate in the 1st electrode, and the shutter with which the 2nd electrode was closed The step of dry etching the semiconductor substrate, the step of interrupting the etching and eliminating the dry etching atmosphere, the step of opening the shutter, the step of observing the etching state of the semiconductor substrate using a camera, and the shutter closed again A method for dry etching a semiconductor substrate, comprising the step of dry etching the semiconductor substrate again using the observation result in a state. In the step of observing the etching state of the semiconductor substrate using the camera, the film thickness of the material to be etched on the semiconductor substrate is measured, and
In the step of dry etching the semiconductor substrate again using the observation result in a state where the shutter is closed again, a condition for etching the material to be etched is determined using the film thickness measurement result,
The dry etching method according to claim 4.

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