JP2009212258A - Method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent poor adhesion between a bonding pad for a semiconductor chip and a wire in a wire bonding process. <P>SOLUTION: In a wire bonding method, Au balls 9a are connected sequentially to two mutually adjacent bonding pads 8a and 8b, and the heights (A1 and A2) of a capillary 38 at each first bonding are compared. When a difference (¾A1-A2¾) of the two heights exceeds a threshold because of a contamination 14 on the surface of the bonding pad 8b, a bonding work is stopped instantaneously. Accordingly, poor adhesion of the Au balls 9a to the bonding pad 8b can be detected reliably in a moment. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a manufacturing technique of a semiconductor device, and more particularly, a technique effective when applied to the manufacture of a semiconductor device having a wire bonding step of electrically connecting a bonding pad of a semiconductor chip and a wiring board on which the semiconductor chip is mounted. It is about.

  Wire bonding technology is widely used as a method for electrically connecting a bonding pad of a semiconductor chip to a wiring board or lead frame on which the semiconductor chip is mounted. Among these, the nail head bonding method (also referred to as a ball bonding method) that uses both ultrasonic waves and thermocompression bonding is most often used as a wire bonding method.

  For example, the step of connecting the wiring of the wiring board on which the semiconductor chip is mounted and the bonding pad of the semiconductor chip using the nail head bonding method is as follows: (1) Au balls formed by melting the tips of Au wires A first bonding step in which pressure is applied to the bonding pad while applying ultrasonic vibration, and (2) an Au wire having one end connected to the bonding pad is drawn out from the tip of the capillary so as to draw a loop. A second bonding step in which the wire is crimped to the wiring at the tip of the capillary, and (3) a step of cutting the Au wire by raising the capillary. Then, by repeating the above three steps (1) to (3), a plurality of bonding pads formed on the semiconductor chip and corresponding wirings are sequentially connected by Au wires.

  Japanese Patent Laying-Open No. 2007-95929 (Patent Document 1) discloses one problem of the nail head bonding method. According to this patent document, when the surface of the wiring formed on the wiring substrate is rough or foreign matter adheres to the surface of the wiring, the bonding of the Au wire to the wiring is performed in the second bonding step described above. It tends to be incomplete. In such a case, if the Au wire is cut by raising the capillary in the next step, the length of the Au wire exposed from the lower end of the capillary may be insufficient. As a result, in the next first bonding step, the Au ball is not formed when the Au wire exposed from the lower end portion of the capillary is melted, so that the next bonding pad is blanked.

As a countermeasure, the above-mentioned patent document performs preliminary stitch bonding and subsequent tail bonding in the second bonding step, then slightly shifts the capillary without cutting the Au wire, and again performs stitch bonding at that position. Thereafter, the length of the Au wire protruding from the tip of the capillary is optimized by raising the capillary and cutting the Au wire.
JP 2007-95929 A

  As a result of studying the wire bonding process using the nail head bonding method, the present inventor has found the following problems.

  As described above, in the first bonding step of the nail head bonding method, the Au ball formed by melting the tip of the Au wire is pressed at the tip of the capillary and applied to the bonding pad of the semiconductor chip while applying ultrasonic vibration. Crimp. However, at this time, if foreign matter adheres to the surface of the bonding pad or the pressure bonding strength of the Au ball is insufficient, the Au ball peels off from the bonding pad when the capillary is pulled up, and in the next second bonding step. It may be bonded onto the wiring of the wiring board.

  Usually, when the Au ball is not pressed onto the surface of the bonding pad in the first bonding process, the wire bonding apparatus detects the non-attachment of the Au ball and stops the bonding operation. However, in the above case, since the Au ball is once pressure-bonded to the surface of the bonding pad and then peeled off, the defective adhesion of the Au ball is overlooked without being detected, and the bonding process proceeds.

  The above-mentioned non-sticking defect of the Au ball is particularly likely to occur when a semiconductor chip and a chip component (chip capacitor, low-pass filter, etc.) are mixedly mounted on the wiring board. That is, when the semiconductor chip and the chip component are mixedly mounted on the wiring board, prior to the wire bonding step, (1) a step of printing solder on the wiring surface of the semiconductor chip mounting region and the wiring surface of the chip component mounting region (2) A step of temporarily placing the semiconductor chip and the chip component on the wiring on which the solder is printed, and (3) soldering the semiconductor chip and the chip component to the wiring surface by reflowing the solder by heating the wiring board. (4) There is a step of removing unnecessary solder and flux remaining on the surface of the wiring board by flux cleaning the wiring board. Therefore, molten solder or flux adheres to the bonding pad surface of the semiconductor chip in the solder reflow process (3), and these remain as foreign matter without being removed from the bonding pad surface in the next flux cleaning process (4). is there.

  An object of the present invention is to provide a technique for reliably preventing non-bonding defects between a bonding pad and a wire of a semiconductor chip in a wire bonding process.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

According to another aspect of the present invention, there is provided a method for manufacturing a semiconductor device, comprising: preparing a semiconductor chip having a plurality of bonding pads formed on a surface thereof; and a mounting base having a plurality of electrodes formed on the surface. A method of manufacturing a semiconductor device in which each of a plurality of bonding pads and each of the plurality of electrodes are electrically connected by wires,
(A) Of the plurality of bonding pads, a first wire is crimped to the surface of the first bonding pad, and the reference position at the time when the first wire is crimped to the surface of the first bonding pad. Measuring the height (A1) to the capillary of the wire bonding apparatus;
(B) Of the plurality of electrodes, the first wire is crimped to the surface of the first electrode, and the reference position at the time when the first wire is crimped to the surface of the first electrode is Measuring the height to the capillary (B1);
(C) Among the plurality of bonding pads, the reference position at the time when a second wire is crimped to the surface of the second bonding pad and the second wire is crimped to the surface of the second bonding pad. Measuring the height (A2) from the capillary to the capillary, and comparing the height (A1) and the height (A2);
(D) Of the plurality of electrodes, the second wire is crimped to the surface of the second electrode, and the reference position at the time when the second wire is crimped to the surface of the second electrode is Measuring the height (B2) to the capillary and comparing the height (B1) and the height (B2);
Have
In the step (c), when the difference between the height (A1) and the height (A2) exceeds a predetermined threshold, or in the step (d), the height (B1) and the height When the difference from (B2) exceeds a predetermined threshold value, the bonding operation is stopped.

  Among the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  In the wire bonding step, it is possible to prevent non-bonding defects between the bonding pads of the semiconductor chip and the wires.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiment, and the repetitive description thereof will be omitted. Also, in the following embodiments, the description of the same or similar parts will not be repeated in principle unless particularly necessary.

  In the present embodiment, an HPA (High Power Amplifier) module mounted on a mobile communication device such as a mobile phone will be described as an example of a semiconductor device. FIG. 1 is a plan view showing a wiring board of the HPA module of the present embodiment, and FIG. 2 is a schematic sectional view of the wiring board shown in FIG.

  The wiring board 1 of the HPA module 50 is a multilayer wiring board in which about four insulating layers 4 having a large number of wirings 2 formed on the surface are stacked. On the back surface of the wiring substrate 1, a back surface wiring 3 electrically connected to the wiring 2 through the via hole 5 is formed. The wiring 2 and the back surface wiring 3 formed in each insulating layer 4 are made of Cu, and the insulating layer 4 is made of ceramic. The via hole 5 is an interlayer communication path formed by filling a through hole formed so as to penetrate each insulating layer 4 with a conductor such as Cu or Ag.

  A semiconductor chip 6 on which an integrated circuit such as a power amplifier circuit, an antenna switch circuit, a transmission / reception circuit, an A / D converter, and a D / A converter is formed is mounted on the center of the upper surface of the wiring board 1. . The semiconductor chip 6 is bonded to the conductive plate 2 p formed in the same process as the wiring 2 via the solder 7. A plurality of bonding pads 8 electrically connected to the integrated circuit are formed on the outer peripheral portion of the main surface of the semiconductor chip 6. These bonding pads 8 and the wiring 2 of the wiring board 1 are made of Au wire. 9 is electrically connected.

  A plurality of chip components (passive elements) such as a chip capacitor 10 and a low-pass filter 11 are mounted on the wiring substrate 1 around the semiconductor chip 6. These chip components are electrically connected to the wiring 2 via the solder 7. These chip components and the semiconductor chip 6 are hermetically sealed with a sealing resin 12 made of epoxy resin or the like. In FIG. 1, illustration of the sealing resin 12 is omitted.

  Next, a method for manufacturing the HPA module 50 configured as described above will be described with reference to FIGS.

  First, as shown in FIG. 3, paste-like solder 7 is applied to the surfaces of the wiring 2 and the conductive plate 2p formed on the wiring substrate 1 by using a printing method or the like. Subsequently, as shown in FIG. 4, the semiconductor chip 6 is temporarily placed on the conductive plate 2 p to which the solder 7 is applied, and the chip capacitor 10 and the low-pass filter 11 (only the chip capacitor 10 is shown in the drawing). ) Temporarily. Then, by heating the wiring substrate 1 and reflowing the solder 7, the semiconductor chip 6 is bonded onto the conductive plate 2 p, and the chip capacitor 10 and the low-pass filter 11 are bonded onto the wiring 2.

  Next, after the unnecessary solder 7 and flux remaining on the surface of the wiring board 1 are removed by flux cleaning of the wiring board 1, the bonding pads 8 of the semiconductor chip 6 and The wiring 2 is electrically connected by the Au wire 9.

  FIG. 5 is a schematic perspective view showing a drive unit of a wire bonding apparatus employing a nail head bonding method. The drive unit 31 of the wire bonding apparatus 30 is mounted on an XY table 32 whose position can be controlled in a plane (XY) direction as a base. The drive unit 31 includes a lifter arm 34 that swings in a plane (XY) direction or operates in a vertical (Z) direction by a Z-axis motor 33, an observation system (a camera 35, a lens barrel 36, and those) for detecting a sample. An optical system 37), a bonding arm 39 with a capillary 38 attached to the tip, a wire supply system for supplying the Au wire 9 and cutting the Au wire 9 (in the figure, a clamper 40 for gripping the Au wire 9) And a discharge electrode 41 that makes the tip of the Au wire 9 exposed at the lower end of the capillary 38 into a ball shape by discharge).

  A bonding / conveying system including a bonding stage 42 on which the wiring substrate 1 shown in FIG. 4 is placed and a guide rail 43 that holds and conveys the wiring substrate 1 is disposed in the vicinity of the driving unit 31. Although not shown in the drawing, a heat block for heating the semiconductor chip 6 to a predetermined temperature (for example, 150 ° C. to 200 ° C.) is provided inside the bonding stage 42.

  As shown in FIG. 6, a computer 44 for measuring the position of the lower end portion of the capillary 38 is connected to the bonding arm 39. The computer 44 determines the height (A) from the surface of the wiring board 1 to the lower end of the capillary 38 when the lower end of the capillary 38 contacts the bonding pad 8 of the semiconductor chip 6 in a first bonding step described later. Measure and store in memory circuit 45. Further, in the second bonding step described later, when the lower end portion of the capillary 38 comes into contact with the wiring 2 of the wiring substrate 1, the height (B) from the surface of the wiring substrate 1 to the lower end portion of the capillary 38 is measured to store the memory. The data is stored in the circuit 45. The height of the lower end of the capillary 38 is measured using, for example, a scale connected to a bonding arm 39 that supports the capillary 38. Here, the height of the lower end portion of the capillary 38 is set to the reference position (height = 0) on the surface of the wiring board 1, but for example, the surface of the bonding stage 42 or the surface of the semiconductor chip 6 is referred to as the reference position (height). (Height = 0).

  In order to electrically connect the bonding pad 8 of the semiconductor chip 6 and the wiring 2 of the wiring board 1 with the Au wire 9, first, as shown in FIG. 7, the semiconductor chip 6 and chip components (not shown) are mounted. The completed wiring board 1 is held by the guide rail 43 and placed on the bonding stage 42, and the semiconductor chip 6 is heated to 150 ° C. to 200 ° C.

  Next, as shown in FIG. 8, after moving the capillary 38 above the bonding pad 8a, an electric spark is generated between the tip of the Au wire 9 exposed at the lower end of the capillary 38 and the discharge electrode 41. As a result, an Au ball 9 a having a diameter of several tens of μm is formed at the lower end of the capillary 38. Here, the bonding pad 8 a is a pad for bonding the Au wire 9 first among the plurality of bonding pads 8 formed on the semiconductor chip 6.

  Next, as shown in FIG. 9, the clamper 40 is opened to release the clamped state of the Au wire 9, and while applying ultrasonic vibration to the capillary 38 through the bonding arm 39, the Au ball 9a is crimped to the bonding pad 8a. (First bonding step). Then, the Au ball 9a undergoes plastic deformation to become a flat shape, and an Au—Al eutectic bond is formed at the interface between the Au ball 9a and the bonding pad 8a to join them. At this time, in this embodiment, the height (A1) from the surface of the wiring board 1 to the lower end of the capillary 38 is measured, and the value is stored in the memory circuit 45 of the computer 44 shown in FIG.

  Next, as shown in FIG. 10, after the capillary 38 is raised and the clamper 40 is closed, the capillary 38 is moved onto the wiring 2a of the wiring board 1 as shown in FIG. The Au wire 9 is pressure-bonded to the wiring 2a while applying a voltage (second bonding step). Here, the wiring 2 a is a wiring to which the first Au wire 9 is bonded among the plurality of wirings 2 formed on the wiring substrate 1. At this time, in the present embodiment, the height (B1) from the surface of the wiring board 1 to the lower end of the capillary 38 is measured, and the value is stored in the memory circuit 45 of the computer 44.

  Next, as shown in FIG. 12, the Au wire 9 fixed to the clamper 40 is raised together with the capillary 38. As a result, the Au wire 9 is cut at the surface of the wiring 2a, and one end of the Au wire 9 is exposed at a lower end of the capillary 38 by a predetermined length. Up to this step, the bonding pad 8 a and the wiring 2 a are electrically connected by the single Au wire 9.

  Next, as shown in FIG. 13, the capillary 38 is moved above the bonding pad 8b, and an Au ball 9a is formed at the lower end of the capillary 38 according to the method described in FIG. Here, the bonding pad 8b is the second pad adjacent to the bonding pad 8a in which the bonding of the Au wire 9 is completed, and it is assumed that the solid foreign matter 14 is attached to the surface thereof.

  Next, as shown in FIG. 14, the first bonding described in FIG. 9 is performed on the second bonding pad 8b. Then, the Au ball 9a formed on the lower end portion of the capillary 38 is pressure-bonded to the surface of the foreign material 14 instead of the surface of the bonding pad 8b. Therefore, the height (A2) from the surface of the wiring board 1 to the lower end of the capillary 38 is larger than the height (A1) when the first bonding is performed on the first bonding pad 8a (A2> A1). )

  At this time, the computer 44 shown in FIG. 6 stores the height (A2) in the memory circuit 45 and uses the comparison circuit 46 to compare the difference between the two heights A1 and A2 (| A1−A2 | ) Is detected, and it is determined whether or not the difference (| A1-A2 |) exceeds a preset threshold value. If this difference (| A1-A2 |) is determined to be equal to or less than the threshold value, the bonding operation is continued as it is. Here, when the difference between the two heights (| A1-A2 |) is equal to or less than the threshold value, for example, the size of the foreign matter 14 is extremely small, so This is a case where it is judged that there is no adverse effect. Further, when no foreign matter is present on the surface of the bonding pad 8b, the difference between the two heights (| A1-A2 |) is 0, but this is caused by slight warpage or unevenness of the surface of the wiring board 1. The difference (| A1-A2 |) may not be zero. Therefore, in such a case, the difference between the two heights (| A1−A2 |) is determined to be equal to or less than the threshold value, and the bonding operation is continued.

  However, when the size of the foreign material 14 is large, there is a high possibility that the Au ball 9a does not adhere to the bonding pad 8b. In this case, the difference between the two heights (| A1-A2 |) exceeds the threshold value. Therefore, the comparison circuit 46 sends a signal to the control circuit 47 that the height difference (| A1−A2 |) exceeds the threshold value. Upon receiving this signal, the control circuit 47 instructs the drive unit 31 of the wire bonding apparatus 30 to stop the bonding work.

  As described above, in the wire bonding method of the present embodiment, after the Au balls 9a are sequentially connected to the two adjacent bonding pads 8a and 8b, the heights (A1 and A2) of the capillaries 38 at the time of each first bonding are performed. ). If the difference between the two heights (| A1-A2 |) exceeds the threshold value due to the foreign matter 14 on the surface of the bonding pad 8b, the bonding operation is immediately stopped. As a result, the non-attachment of the Au ball 9a to the bonding pad 8b can be detected instantaneously and reliably.

  Further, according to the wire bonding method of the present embodiment, even if the foreign matter 14 is attached to the surface of the first bonding pad 8a, the non-adhesion of the Au ball 9a to the bonding pad 8a is detected. It can be detected during the first bonding of 8b. That is, in this case, assuming that the foreign matter 14 is not attached to the surface of the adjacent bonding pad 8b, the difference between the two heights (| A1−A2 |) exceeds the threshold value. The bonding operation can be stopped immediately after the Au ball 9a is bonded to the second bonding pad 8b.

  The non-bonding failure of the Au ball 9a with respect to the bonding pad 8 can also be caused by a cause other than the foreign matter 14, for example, when the flux in the solder component is attached to the surface of the bonding pad 8. Then, next, a case where it is assumed that a thin film such as a flux adheres to the surface of the second bonding pad 8b described above will be described.

  In this case, as shown in FIG. 15, when the Au ball 9a is pressure-bonded to the surface of the second bonding pad 8b, the height (A2) from the surface of the wiring board 1 to the lower end of the capillary 38 is the first. The height (A2≈A1) is substantially the same as the height (A1) when the Au ball 9a is pressure-bonded to the bonding pad 8a. That is, the difference between the two heights (| A1-A2 |) is equal to or less than the threshold value. This flux is not shown in the figure because its film thickness is thin. Further, even when the above-described solid foreign matter 14 adheres to the surface of the bonding pad 8b, if the foreign matter 14 is made of a soft material, it is crushed when the Au ball 9a is pressed. Since the film is thin, the difference between the two heights (| A1−A2 |) may be less than the threshold value.

  As described above, when the Au ball 9a is pressure-bonded to the second bonding pad 8b to which a foreign substance having a thickness equal to or less than the threshold is attached, an Au—Al eutectic bond is not formed at the interface between the bonding pad 8b and the Au ball 9a. Regardless, the computer 44 determines that the first bonding has been performed normally. Therefore, the wire bonding apparatus 30 continues the bonding operation as it is and moves the capillary 38 above the bonding pad 8b as shown in FIG. At this time, since the Au ball 9a is not bonded to the surface of the bonding pad 8b (or bonded with an extremely weak force), it peels off from the surface of the bonding pad 8b and rises together with the capillary 38.

  Next, as shown in FIG. 17, the capillary 38 is moved onto the wiring 2b of the wiring substrate 1, and the Au wire 9 is pressure-bonded to the wiring 2b while applying ultrasonic vibration to the capillary 38 (second bonding step). Here, the wiring 2 b is the second wiring to which the second Au wire 9 is bonded among the plurality of wirings 2 formed on the wiring substrate 1.

  When this second bonding is performed, since the Au ball 9a remaining at the tip of the Au wire 9 is pressed against the surface of the wiring 2b, the height (B2) from the surface of the wiring substrate 1 to the lower end of the capillary 38 is The height (B2> B1) is larger than the height (B1) when the second bonding is performed on the first wiring 2a. That is, in this case, the difference between the two heights (| B1−B2 |) exceeds the threshold value.

  Therefore, the comparison circuit 46 of the computer 44 sends a signal that the height difference (| B1−B2 |) exceeds the threshold value to the control circuit 47, and the control circuit 47 receiving this signal drives the wire bonding apparatus 30. The unit 31 is instructed to stop the bonding work.

  As described above, in the wire bonding method of the present embodiment, after the Au wire 9 is sequentially connected to the two adjacent wires 2a and 2b, the height (B1, B2) of the capillary 38 at the time of each second bonding is performed. If the difference between the two heights (| B1-B2 |) exceeds the threshold value, the bonding operation is immediately stopped. As a result, even if a foreign matter having a thickness equal to or less than the threshold is attached to the second bonding pad 8b, if the foreign matter causes the Au ball 9a to be non-attached, the Au ball 9a with respect to the bonding pad 8b Can be detected promptly and reliably.

  As described above, according to the wire bonding method of the present embodiment, if a non-bonding defect occurs between the bonding pad 8 of the semiconductor chip 6 and the Au wire 9, the bonding operation is immediately stopped, and therefore the bonding pad 8 Therefore, it is possible to reliably prevent the non-bonding defect of the Au wire 9 against the.

  As described above, in the present embodiment, the height difference (| A1-A2 |) of the capillary 38 when the Au wire 9 is connected to each of the two bonding pads 8 is compared, and the two wirings 2 are respectively compared. By comparing the height difference (| B1-B2 |) of the capillary 38 when the Au wire 9 is connected, the non-attachment of the Au wire 9 to the bonding pad 8 is detected.

  However, as another method, the height (A 0) of the capillary 38 when the Au wire 9 is normally connected to the bonding pad 8 and the height of the capillary 38 when the Au wire 9 is normally connected to the wiring 2. (B0) is input to the computer 44 as a standard value, the difference (| A1-A0 |) between the height of the capillary 38 and the standard value when the Au wire 9 is connected to the bonding pad 8, and the wiring 2 By comparing the difference (| B1−B0 |) between the height of the capillary 38 when the Au wire 9 is connected to the standard value (| B1−B0 |), it is possible to detect the non-attachment of the Au wire 9 to the bonding pad 8.

  For example, when the surface of the wiring substrate 1 has large irregularities and warpage, even if the Au ball 9a does not adhere to the bonding pad 8b as described above, the second bonding is performed on the first wiring 2a. The difference (| B1−B2 |) between the height (B1) when the second bonding is performed and the height (B2) when the second bonding is performed on the second wiring 2b is erroneously determined to be equal to or less than the threshold value. The wire bonding apparatus 30 may operate as it is without stopping.

  Such a malfunction can be prevented by the following method. First, as shown in FIGS. 18 and 19, for example, when normal second bonding is performed on the first wiring 2a, the height (C1) before applying ultrasonic vibration and ultrasonic vibration are applied. The subsequent height (C2) is measured, and the difference (| C1-C2 | = E) is stored in the memory circuit 45 of the computer 44. When the Au wire 9 is crimped to the wiring 2a while applying ultrasonic vibration to the capillary 38, the Au wire 9 is crushed by the capillary 38, and therefore the height (C2) after applying ultrasonic vibration is the ultrasonic vibration. It becomes smaller than the height (C1) before application. Here, the height (C1, C2) when the second bonding is performed on the first wiring 2a is measured. However, if the wiring board 1 is the same, which wiring 2 is used, the height (C1, C2) ) May be measured.

  Next, as shown in FIGS. 20 and 21, when the second bonding is performed on the wiring 2a in the actual bonding process, the height (C3) before applying the ultrasonic vibration and the ultrasonic vibration are measured. The height (C4) after application is measured, and the difference (| C3-C4 | = F) is stored in the memory circuit 45 of the computer 44. Then, the comparison circuit 46 is used to compare the difference (F) with a reference difference (E) measured in advance.

  Here, when the non-bonding failure as shown in FIG. 16 occurs with respect to the bonding pad 8a and the Au ball 9a peeled off from the surface of the bonding pad 8a is pressure-bonded to the surface of the wiring 2a, the difference (F) Becomes a value different from the reference difference (E). Therefore, the comparison circuit 46 of the computer 44 sends a signal that the difference (| E−F |) exceeds the threshold value to the control circuit 47, and the control circuit 47 that receives the signal sends the signal to the drive unit 31 of the wire bonding apparatus 30. Is instructed to stop the bonding operation. Thereby, even when the unevenness | corrugation and curvature of the surface of the wiring board 1 are large, the non-attachment of the Au wire 9 with respect to the bonding pad 8 can be detected reliably.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment of the invention, and various modifications can be made without departing from the scope of the invention. is there.

  In the embodiment, the height (A, B) from the surface of the wiring board 1 to the lower end of the capillary 38 in the first bonding process and the second bonding process is measured, whereby the Au wire 9 with respect to the bonding pad 8 is measured. For example, the waveform of ultrasonic vibration when the Au wire 9 is normally crimped to the bonding pad 8 and the wiring 2 is stored in the computer 44, and the Au wire 9 is detected in the actual bonding process. The bonding operation may be stopped when the difference from the waveform of the ultrasonic vibration when the is pressed exceeds a threshold value. That is, when the Au wire 9 is pressure-bonded to the surface of the bonding pad 8 with the foreign matter 14 attached to the surface, or when the Au ball 9a peeled off from the surface of the bonding pad 8 is pressure-bonded to the surface of the wiring 2, Since the waveform is different from that when the waveform is normal, it is possible to detect a non-stick defect by detecting the difference between the waveforms.

  In the above embodiment, the wiring board is exemplified as the mounting base. However, the present invention can also be applied to a case where a semiconductor chip is mounted on a mounting base such as a lead frame and the bonding pads and leads are electrically connected by wires. it can.

  The present invention can be applied to a semiconductor device using a wiring board having a plurality of stacked structures.

It is a top view which shows the wiring board of the HPA module used by embodiment of this invention. It is a schematic sectional drawing of the wiring board shown in FIG. It is a schematic sectional drawing of the wiring board which shows the manufacturing method of the semiconductor device which is embodiment of this invention. It is a schematic sectional drawing of the wiring board which shows the manufacturing method of the semiconductor device which is embodiment of this invention. It is a schematic perspective view which shows the drive part of the wire bonding apparatus used by embodiment of this invention. It is a schematic side view which shows the bonding arm of the wire bonding apparatus shown in FIG. It is a schematic perspective view of the wire bonding apparatus which shows the manufacturing method of the semiconductor device which is embodiment of this invention. It is a principal part side view of the wire bonding apparatus which shows the manufacturing method of the semiconductor device which is embodiment of this invention. It is a principal part side view of the wire bonding apparatus which shows the manufacturing method of the semiconductor device which is embodiment of this invention. It is a principal part side view of the wire bonding apparatus which shows the manufacturing method of the semiconductor device which is embodiment of this invention. It is a principal part side view of the wire bonding apparatus which shows the manufacturing method of the semiconductor device which is embodiment of this invention. It is a principal part side view of the wire bonding apparatus which shows the manufacturing method of the semiconductor device which is embodiment of this invention. It is a principal part side view of the wire bonding apparatus which shows the manufacturing method of the semiconductor device which is embodiment of this invention. It is a principal part side view of the wire bonding apparatus which shows the manufacturing method of the semiconductor device which is embodiment of this invention. It is a principal part side view of the wire bonding apparatus which shows the manufacturing method of the semiconductor device which is embodiment of this invention. It is a principal part side view of the wire bonding apparatus which shows the manufacturing method of the semiconductor device which is embodiment of this invention. It is a principal part side view of the wire bonding apparatus which shows the manufacturing method of the semiconductor device which is embodiment of this invention. It is a principal part enlarged side view of the wire bonding apparatus which shows the manufacturing method of the semiconductor device which is embodiment of this invention. It is a principal part enlarged side view of the wire bonding apparatus which shows the manufacturing method of the semiconductor device which is embodiment of this invention. It is a principal part enlarged side view of the wire bonding apparatus which shows the manufacturing method of the semiconductor device which is embodiment of this invention. It is a principal part enlarged side view of the wire bonding apparatus which shows the manufacturing method of the semiconductor device which is embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Wiring board 2, 2a, 2b Wiring 2p Conductive plate 3 Back surface wiring 4 Insulating layer 5 Via hole 6 Semiconductor chip 7 Solder 8, 8a, 8b Bonding pad 9 Au wire 9a Au ball 10 Chip capacitor 11 Low pass filter 12 Sealing resin 14 Foreign material 30 Wire bonding apparatus 31 Drive unit 32 XY table 33 Z-axis motor 34 Lifter arm 35 Camera 36 Lens barrel 37 Optical system 38 Capillary 39 Bonding arm 40 Clamper 41 Discharge electrode 42 Bonding stage 43 Guide rail 44 Computer 45 Memory circuit 46 Comparison circuit 47 Control Circuit 50 HPA module

Claims (7)

A semiconductor chip having a plurality of bonding pads formed on the surface and a mounting base having a plurality of electrodes formed on the surface are prepared, and each of the plurality of bonding pads is formed using a wire bonding apparatus. A method of manufacturing a semiconductor device in which each is electrically connected with a wire,
(A) Of the plurality of bonding pads, a first wire is crimped to the surface of the first bonding pad, and the reference position at the time when the first wire is crimped to the surface of the first bonding pad. Measuring the height (A1) to the capillary of the wire bonding apparatus;
(B) Of the plurality of electrodes, the first wire is crimped to the surface of the first electrode, and the reference position at the time when the first wire is crimped to the surface of the first electrode is Measuring the height to the capillary (B1);
(C) Among the plurality of bonding pads, the reference position at the time when a second wire is crimped to the surface of the second bonding pad and the second wire is crimped to the surface of the second bonding pad. Measuring the height (A2) from the capillary to the capillary, and comparing the height (A1) and the height (A2);
(D) Of the plurality of electrodes, the second wire is crimped to the surface of the second electrode, and the reference position at the time when the second wire is crimped to the surface of the second electrode is Measuring the height (B2) to the capillary and comparing the height (B1) and the height (B2);
Have
In the step (c), when the difference between the height (A1) and the height (A2) exceeds a predetermined threshold, or in the step (d), the height (B1) and the height The method for manufacturing a semiconductor device is characterized in that the bonding operation is stopped when the difference from (B2) exceeds a predetermined threshold value. A semiconductor chip on which a plurality of bonding pads are formed and a mounting base on which a plurality of electrodes are formed are prepared, and a wire bonding apparatus is used to wire each of the plurality of bonding pads and each of the plurality of electrodes. A method of manufacturing a semiconductor device electrically connected at
(A) Of the plurality of bonding pads, a first wire is crimped to the surface of the first bonding pad, and the reference position at the time when the first wire is crimped to the surface of the first bonding pad. Measuring the height (A1) to the capillary of the wire bonding apparatus and comparing the height (A1) with a reference height (A0);
(B) Of the plurality of electrodes, the first wire is crimped to the surface of the first electrode, and the reference position at the time when the first wire is crimped to the surface of the first electrode is Measuring the height (B1) to the capillary and comparing the height (B1) with a reference height (B0);
Have
In the step (a), when the difference between the height (A1) and the reference height (A0) exceeds a predetermined threshold, or in the step (b), the height (B1) and the height A method of manufacturing a semiconductor device, wherein a bonding operation is stopped when a difference from a reference height (B0) exceeds a predetermined threshold value.   3. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of soldering a chip component to the surface of the mounting base prior to the step (a).   3. The method of manufacturing a semiconductor device according to claim 1, wherein the wire bonding apparatus is a ball bonding apparatus using heat and ultrasonic vibration in combination. A semiconductor chip having a plurality of bonding pads formed on the surface and a mounting base having a plurality of electrodes formed on the surface are prepared, and the plurality of bonding pads are used by using a ball bonding apparatus using both heat and ultrasonic vibration. Each of the plurality of electrodes and each of the plurality of electrodes is electrically connected by a wire,
(A) a step of crimping a first wire to the surface of the first bonding pad among the plurality of bonding pads;
(B) a step of crimping the first wire to the surface of the first electrode among the plurality of electrodes;
Have
In the step (b), the height (B1) from the reference position to the capillary before applying the ultrasonic vibration to the first wire, and after applying the ultrasonic vibration to the first wire A difference (E) from a height (B2) from the reference position to the capillary is calculated, and the bonding operation is stopped when the difference (E) exceeds a predetermined threshold value. Device manufacturing method. A semiconductor chip having a plurality of bonding pads formed on the surface and a mounting base having a plurality of electrodes formed on the surface are prepared, and the plurality of bonding pads are used using a ball bonding apparatus using both heat and ultrasonic vibration. Each of the plurality of electrodes and each of the plurality of electrodes is electrically connected by a wire,
(A) a step of crimping a first wire to the surface of the first bonding pad among the plurality of bonding pads;
(B) a step of crimping the first wire to the surface of the first electrode among the plurality of electrodes;
Have
In the step (a), a difference (W1) between a waveform and a reference waveform when the ultrasonic vibration is applied to the first wire is detected,
In the step (b), a difference (W2) between a waveform when the ultrasonic vibration is applied to the first wire and a reference waveform is detected,
When the difference (W1) exceeds a predetermined threshold in the step (a), or when the difference (W2) exceeds a predetermined threshold in the step (b), the bonding operation is stopped. A method of manufacturing a semiconductor device.   7. The method of manufacturing a semiconductor device according to claim 5, further comprising a step of soldering a chip component to the surface of the mounting base prior to the step (a).

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