JP2009170664A - Surface position detector, aligner, and device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To accurately detect the position of an inspecting surface regardless of the state of the foundation of the inspecting surface. <P>SOLUTION: A surface position detector includes: a first backlight optical system 11a for applying first detection light DL1 to a first illumination region on the inspection surface W from an oblique direction; a second backlight optical system 11b for applying second detection light DL2 to a second illumination region that includes the first illumination region on the inspection surface W and is larger than the first illumination region; a light reception optical system 12 having a detection means 28 for detecting the first detection light DL1 and second detection light DL2 reflected on the inspection surface W; and a control means 29 that selectively switches the irradiation of the first detection light DL1 by the first backlight optical system 11a and that of the second detection light DL2 by the second backlight optical system 11b, corrects a detection value based on the first detection light DL1 by the detection means 28 by the detection value based on the second detection light DL2 by the detection means 28, and detects the surface position of the inspection surface W based on the corrected detection value. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a surface position detection device that detects the position of a surface to be measured such as the surface of a substrate, an exposure apparatus that includes the surface position detection device, and a device manufacturing method that uses the exposure device.

  In a photolithography process for manufacturing liquid crystal display elements, printed wiring boards, semiconductor elements, thin film magnetic heads, and other micro devices, a reticle or mask on which a pattern to be transferred (device pattern) is formed (hereinafter referred to as these) An exposure apparatus is used that exposes a substrate (photosensitive substrate) such as a wafer coated with a photoresist (photosensitive material) with light via a general term “reticle”.

  The exposure apparatus includes a light source, an illumination optical system, a projection optical system, a stage, and the like, and in order to accurately align the surface position of the substrate with the image plane of the projection optical system, the exposure optical system in the optical axis direction of the projection optical system. A surface position detection device (focus sensor) for detecting the surface position is provided.

  As the surface position detection device, for example, a slit-shaped detection light is irradiated from an oblique direction to the surface of the substrate as the test surface, and the reflected light on the surface of the substrate is detected from the oblique direction. An oblique incidence type is known (for example, see Patent Document 1 below).

  However, since a plurality of pattern layers are formed by repeating thin film formation, exposure, development, processing, etc. on the substrate, the surface of the substrate as the test surface of the surface position detection device is There may be a pattern formed in an earlier process, and there may be a minute unevenness.

  For this reason, the reflected light reflected by the surface of the substrate is superimposed with the light irregularly reflected by the pattern or unevenness as noise, which reduces the detection accuracy and may not detect the surface position of the substrate accurately. There was a problem that there was. That is, an error may be included in the detected value depending on the state of the base of the surface to be measured.

The present invention has been made in view of such a point, and an object thereof is to enable accurate detection of the position of the test surface regardless of the state of the base of the test surface.
JP 2007-192725 A

  In the description of this section, reference numerals indicating members and the like shown in the drawings representing the embodiments to be described later are appended with parentheses, but this is merely for ease of understanding, and each component of the present invention is: The present invention is not limited to the members shown in the drawings with the reference numerals indicating these members.

  According to the first aspect of the present invention, the first light transmission optical system (11a) that irradiates the first detection light (DL1) from the oblique direction to the first irradiation region (SL) on the test surface (W); A second light transmission optical system (11b) that irradiates a second detection light (DL2) from an oblique direction to a second irradiation region (OP) that includes the first irradiation region on the surface to be measured and that is larger than the first irradiation region. ), A light receiving optical system (12) having a detection means (28) for detecting the first detection light and the second detection light reflected by the test surface, and the first light transmission optical system. The irradiation of one detection light and the irradiation of the second detection light by the second light transmission optical system are selectively switched, and the detection value based on the first detection light by the detection means is detected by the detection means. Correction based on the detection value based on light, and based on the corrected detection value, And control means for detecting the surface position of the surface (29), the surface position detecting apparatus comprising a (AF) is provided.

  In this case, the first irradiation region can be a plurality of line irradiation regions (SL) arranged in a predetermined pitch direction on the test surface. Further, the first detection light (DL1) and the second detection light (DL2) can be light in the same wavelength band.

  According to a second aspect of the present invention, there is provided an exposure apparatus (1) for projecting and exposing a predetermined pattern onto a substrate (W), wherein the first aspect of the present invention is used to detect the surface position of the substrate. An exposure apparatus provided with such a surface position detection device (AF) is provided.

  According to a third aspect of the present invention, there is provided a device manufacturing method comprising: preparing a photosensitive substrate (W) (S12); and using the exposure apparatus according to the second aspect of the present invention, said predetermined A step of exposing a pattern on the photosensitive substrate (S13); a step of developing the exposed photosensitive substrate and forming a mask layer having a shape corresponding to the exposed pattern on the surface of the photosensitive substrate ( And a step (S13) of processing the surface of the photosensitive substrate through the mask layer.

  In the present invention, the state of the ground on the surface to be measured can be detected by the second detection light from the second light transmission optical system, and the first detection from the first light transmission optical system is based on this detection value. Since the detection value by light is corrected, the error included in the detection value can be eliminated depending on the state of the ground, and the surface position of the test surface can be accurately detected.

  According to the present invention, there is an effect that a surface position detecting device capable of accurately detecting the position of the test surface regardless of the state of the base of the test surface is provided. Further, there is an effect that an exposure apparatus capable of measuring the surface position of the substrate with high accuracy and performing exposure transfer of a highly accurate pattern is provided. Furthermore, there is an effect that a device manufacturing method capable of manufacturing a high-quality and highly reliable device is provided.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[Overall configuration of exposure apparatus]
FIG. 1 is a diagram schematically showing an outline of the overall configuration of an exposure apparatus equipped with an autofocus sensor as a surface position detection apparatus according to an embodiment of the present invention.

  In the following description, the XYZ orthogonal coordinate system shown in FIG. 1 is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. The XYZ orthogonal coordinate system is set so that the Y axis is perpendicular to the paper surface, and the X axis and the Z axis are parallel to the paper surface. In the XYZ orthogonal coordinate system in the figure, the XY plane is actually set to a plane parallel to the horizontal plane, and the Z axis is set to the vertically upward direction.

  The exposure apparatus 1 is an immersion type exposure apparatus that exposes a wafer W as a photosensitive substrate coated with a photoresist (photosensitive material) through a liquid.

  Further, the exposure apparatus 1 synchronously moves (scans) a reticle stage (not shown) that moves the reticle R with respect to the projection optical system PL and a wafer table WT of the wafer stage WS that moves the wafer W. This is a step-and-scan type exposure apparatus that sequentially transfers an image of a pattern formed on R onto a shot area on a wafer W.

  In FIG. 1, an illumination optical system (not shown) arranged on the upper side of a reticle R has a cross-sectional shape of laser light emitted from a light source such as an ArF excimer laser light source (wavelength 193 nm) orthogonal to the scanning (scanning) direction. While shaping into a slit extending in the direction, the illuminance distribution is made uniform and emitted as exposure light EL.

In this embodiment, the light source is an ArF excimer laser. However, the light source is not limited to this, and an ultrahigh pressure mercury lamp that emits g-line (wavelength 436 nm) or i-line (wavelength 365 nm) or KrF excimer laser. (Wavelength 248 nm), F ₂ laser (wavelength 157 nm), and other light sources can be used.

  The reticle R is attracted and held on a reticle stage (not shown), and the position of the reticle stage is measured by a laser interferometer (not shown).

  The reticle R is positioned by moving the reticle stage in a plane (XY plane) perpendicular to the optical axis direction (Z-axis direction) of the projection optical system PL and rotating it slightly around the Z axis (not shown). Is done by. When transferring the pattern image of the reticle R onto the wafer W, the reticle driving device scans the reticle stage at a constant speed in a predetermined scanning direction.

  Above the reticle stage, a pair of alignment systems (not shown) for photoelectrically detecting a plurality of reticle alignment marks formed around the reticle R are provided along the scanning direction.

  A wafer stage WS is provided below the projection optical system PL having a plurality of optical elements such as lenses. Wafer stage WS includes wafer table WT and a drive device that moves wafer table WT in a two-dimensional manner in the XY plane and moves it slightly in the Z-axis direction.

  The wafer table WT is provided with a wafer holder WH that detachably sucks the wafer W, and the wafer W as an exposure target is placed on the wafer holder WH and sucked and fixed.

  The position of wafer table WT in the X and Y axis directions is measured by a laser interferometer (not shown).

  The position of wafer table WT in the Z-axis direction is measured by an autofocus sensor (surface position detection device) AF provided in an autofocus mechanism (AF mechanism).

  Although not shown in FIG. 1, a center table (not shown) capable of moving up and down in the vertical direction (Z-axis direction) is provided at the center of the wafer holder WH.

  The center table has a suction port for vacuum-sucking the back surface of the wafer W, is a vertical movement mechanism for carrying the wafer W in and out of the wafer stage WS (wafer holder WH), and a wafer for other exposure apparatuses (not shown). A coater (coating apparatus) that coats the wafer W with a photoresist and / or a pattern that is exposed and transferred onto the wafer W in the vicinity of or adjacent to the exposure apparatus 1 with a transport unit for carrying W in and out. When a developer (developing device) (hereinafter referred to as a coater / developer) or the like is installed, the wafer W is transferred to and from a transfer unit provided in the coater / developer.

  An off-axis type alignment sensor AS for measuring position information of a wafer mark (alignment mark) formed on the wafer W is provided on the side of the projection optical system PL.

  The alignment sensor AS irradiates the target mark with broadband detection light that does not sensitize the resist on the wafer W, and receives an image of the target mark received on the light receiving surface by reflected light from the target mark, and an index (not shown) An image processing type FIA (image processing system FIA) that captures an image of an index mark on an index plate provided in the sensor with an imaging device (camera) including a two-dimensional CCD (Charge Coupled Device) or the like and outputs these imaging signals. Field Image Alignment) type sensors are used.

  In addition, an autofocus sensor (surface position detection device) AF including a light transmission optical system 11 and a light reception optical system 12 is provided in the vicinity of the projection optical system PL, which will be described in detail later. Based on the detection result of the autofocus sensor AF, the wafer table WT described above is driven in the Z-axis direction, and the surface of the wafer W is accurately aligned with the image plane of the projection optical system PL.

  On the wafer table WT of the wafer stage WS, a reference plate (not shown) used for calibration of various sensors and measurement of the baseline amount is attached. On the surface of the reference plate, a reference mark (fiscal mark) that can be detected by the alignment system and other marks are formed together with the reticle R mark. Here, the baseline amount is an amount indicating the distance between the reference position (for example, the center of the pattern image) of the pattern image of the reticle R projected onto the wafer W and the center of the visual field of the alignment sensor AS.

  Since this exposure apparatus 1 is a liquid immersion type, although not shown in the vicinity of the front end portion on the image plane side (wafer W side) of the projection optical system PL, a liquid supply nozzle constituting a liquid immersion mechanism. And a liquid recovery nozzle is provided so as to face this. The liquid supply nozzle is connected to the liquid supply apparatus via a supply pipe, and the liquid recovery nozzle is connected to a recovery pipe connected to the liquid recovery apparatus.

  As the liquid, for example, ultrapure water that transmits ArF excimer laser light (wavelength 193 nm) is used.

  The refractive index n of water with respect to ArF excimer laser light is approximately 1.44. In this water, the wavelength of the exposure light EL1 is shortened to 193 nm × 1 / n = about 134 nm. A control device (not shown) appropriately controls the liquid supply device and the liquid recovery device to supply the liquid (pure water) from the liquid supply nozzle and recover the liquid from the liquid recovery nozzle, whereby the projection optical system PL A certain amount of liquid Lq is held between the wafer W and the wafer W. The liquid Lq is always changed during exposure.

  When the exposure process for all the shot areas to be exposed on the wafer W is completed, the supply of the liquid is stopped, and after the liquid on the wafer W is collected, the wafer table WT is moved to a predetermined delivery position, and the delivery is performed. At the position, the wafer W is transferred (unloaded) to the wafer transfer unit.

[Auto focus sensor]
FIG. 2 is a diagram showing a schematic configuration of an autofocus sensor as a surface position detecting device to which the present invention is applied.

  The autofocus sensor AF is disposed in the vicinity of the projection optical system PL, and a light transmission optical system 11 that irradiates the surface of the wafer W as a test surface from a diagonal direction with detection light (a plurality of slit lights); A light receiving optical system 12 having a detector 28 composed of a line sensor or the like for receiving reflected light on the surface, and detecting the position of the wafer W in the Z-axis direction based on the output of the detector 28. .

  The light transmission optical system 11 includes a first light transmission optical system 11a that irradiates the first detection light DL1, and a second light transmission optical system 11b that irradiates the second detection light DL2.

  The first light transmission optical system 11a includes an imaging lens system including a first light source 21, a condenser lens system 22, an inclination pattern plate 23, a first imaging lens system 24, and a second imaging lens system 25. ing.

  Here, as the first light source 21, an LED (Light Emitting Diode) is used. The first light source 21 emits light or stops emitting light according to a control signal from the control device 29.

  As the first light source 21, a wavelength that does not sensitize the photoresist on the wafer W and that emits light having a wavelength of about 450 to 1000 nm, for example, can be used. Here, a light that emits light having a wavelength of 500 nm is used. Is used. The light from the first light source 21 is collected through the condenser lens system 22 and is irradiated on the tilt pattern plate 23.

  The tilt pattern plate 23 has a plurality of pattern surfaces (light emitting surfaces) (here, light emitting surfaces) so as to be a plurality of line-shaped irradiation regions arranged in a predetermined pitch direction on the surface of the wafer W as a test surface. 6) light transmitting slits (multi-slit patterns), which shape the light from the first light source 21 into a plurality of slit lights.

  The plurality of slit lights from the tilt pattern plate 23 are detected as detection light DL1 composed of a plurality of slit lights via the imaging lens systems 24 and 25, and the position in the Z-axis direction on the surface of the wafer W is to be detected. The region (first irradiation region) is irradiated from an oblique direction with a predetermined angle.

  The light receiving optical system 12 includes an objective lens system including a first objective lens system 26 and a second objective lens system 27, and a detector 28 having a one-dimensional line sensor (TDI sensor) and the like. The light receiving surface 28a of the detector 28 is set so that its longitudinal direction is along the arrangement direction of the plurality of slits constituting the first detection light DL1 on the light receiving surface 28a.

  The detection light DL1 composed of a plurality of slit lights irradiated on the surface of the wafer W from the oblique direction by the first light transmission optical system 11a is reflected by the surface of the wafer W, and the detector 28 via the objective lens systems 26 and 27. And a one-dimensional signal corresponding to the intensity distribution of the reflected light of the detection light DL1 is output from the detector 28. The output from the detector 28 is digitally converted and supplied to the control device 29.

  The second light transmission optical system 11b includes a second light source 31, a condenser lens system 32, an aperture pattern plate 33, a lens system (third projection lens system) 34, a mirror 35, and a half prism 36.

  Here, as the second light source 31, an LED is used as in the first light source 21. The second light source 31 emits light or stops emitting light in accordance with a control signal from the control device 29.

  As the second light source 31, a wavelength that does not sensitize the photoresist on the wafer W and that emits light of, for example, about 450 to 1000 nm can be used. Here, the first detection by the first light source 21 is performed. The light having a wavelength of 500 nm, which is the same as the wavelength of the light DL1, is used.

  Note that the wavelength of the second detection light DL2 from the second light source 31 may be different from that of the first detection light DL1.

  The light from the second light source 31 is collected through the condenser lens system 32 and is irradiated onto the aperture pattern plate 33.

  The opening pattern plate 33 includes all of the projection images of the plurality of slit patterns constituting the first detection light DL1 on the wafer W, and forms a substantially rectangular projection image slightly larger than the slit pattern. A member having a substantially rectangular opening on the pattern surface (light emitting surface).

  The light from the aperture pattern plate 33 enters the half prism 36 via the third projection lens system 34 and the mirror 35 and is coupled to the optical path of the first light transmission optical system 11a. Then, the surface of the wafer W is irradiated.

  The half prism 36 is disposed in a pupil space between the first imaging lens system 24 and the second imaging lens system 25 of the first light transmission optical system 11a, and transmits light via the first imaging lens system 24. The light is transmitted and guided to the second imaging lens system 25, and the light passing through the third imaging lens system 34 and the mirror 35 of the second light transmission optical system 11 b is reflected and guided to the second projection lens system 25.

  Accordingly, the second detection light DL2 from the second light transmission optical system 11b is detected on the wafer W via the imaging lens system constituted by the third imaging lens system 34 and the second imaging lens system 25. The region (second irradiation region) is irradiated from an oblique direction with a predetermined angle.

  The substantially rectangular second detection light DL2 irradiated on the surface of the wafer W from the oblique direction by the second light transmission optical system 11b is reflected by the surface of the wafer W, and the detector 28 via the objective lens systems 26 and 27. And a one-dimensional signal corresponding to the intensity distribution of the reflected light of the second detection light DL2 is output from the detector 28. Similarly to the case of the first detection light DL1, the light from the detector 28 is output. The output is digitally converted and supplied to the control device 29.

The pattern surface of the tilt pattern plate 23, the pattern surface of the aperture pattern plate 33, the light receiving surface 28a of the detector 28, and the image surface of the projection optical system PL are arranged at substantially conjugate positions, and these and each lens. The system is arranged on the basis of the Scheimpflug principle.
The control device 29 selectively switches between the light emission of the first light source 21 of the first light transmission optical system 11a and the light emission of the second light source 31 of the second light transmission optical system 11b. The detection value of the reflected light of the first detection light DL1 on the wafer W by the detector 28 is corrected by the detection value of the reflected light of the second detection light DL2 on the wafer W by the second light transmission optical system 11b. That is, a subtraction process is performed, the surface position of the wafer W is obtained based on the detection value after the subtraction process, and the wafer stage WS is controlled so that the surface of the wafer W coincides with the image plane of the projection optical system PL. Move in the Z-axis direction.

  FIG. 3 shows a plurality of slit images related to the first detection light DL1 projected on the surface of the wafer W. The slit image SL by the first detection light DL1 is influenced by the pattern formed on the base BG of the wafer W and the surface unevenness, and the detection value output from the detector 28 for the reflected light is the base BG. It will contain noise according to.

  Therefore, the surface position of the wafer W detected based on the detection value including such noise includes an error.

  FIG. 4 shows an aperture image related to the second detection light DL2 projected on the surface of the wafer W. The detection value output from the detector 28 for the reflected light of the aperture image OP by the second detection light DL2 is a detection value including noise corresponding to the base BG of the wafer W.

  Therefore, by subtracting the detection value related to the reflected light of the second detection light DL2 from the second light transmission optical system 11b from the detection value related to the reflected light of the first detection light DL1 by the first light transmission optical system 11a. As shown in FIG. 5, it is possible to obtain a detection value that eliminates the influence of the base BG, and to accurately detect the surface position of the wafer W.

  As described above, according to the present embodiment, the state of the base BG on the wafer W as the test surface is detected by the second detection light DL2 by the second light transmission optical system 11b, and based on the detection value, the first Since the detection value of the first detection light DL1 by the light transmission optical system 11a is corrected (subtracted), noise included in the detection value related to the first detection light DL1 can be eliminated depending on the state of the base BG. Thus, the surface position of the wafer W can be accurately detected.

  Further, as described above, the autofocus sensor AF according to the above-described embodiment has a relatively simple configuration in addition to being able to perform highly accurate detection. Due to the relationship with other sensors and devices provided around the PL, there is little physical interference with each other during installation, and there is little possibility of hindering the installation of other sensors and devices.

  In the above-described embodiment, the case where the LEDs are used as the first light source 21 of the first light transmission optical system 11a and the second light source 31 of the second light transmission optical system 11b has been described. A halogen lamp or the like may be used.

  In the case where LEDs are used as both light sources as in the above-described embodiment, since the LEDs respond quickly to light emission / extinction, any light source can be controlled by controlling the light emission / extinction by the control device 29. Can be selectively controlled at high speed.

  However, when a halogen lamp or the like is used, such high-speed switching cannot be performed. In this case, a shutter is provided on the light emission side of the light source to control the operation of the shutter. It is preferable to switch which light source is used.

  Note that, as in the above-described embodiment, even in the case where both LEDs are used, they may be switched to light emission using a shutter.

  As the detector 28 of the light receiving optical system 12, a one-dimensional line sensor is used in the above-described embodiment, but a two-dimensional sensor or the like may be used.

  Next, a device manufacturing method using the exposure apparatus according to the embodiment of the present invention will be described. FIG. 6 is a flowchart of production of a device (a semiconductor chip such as an IC or LSI, a liquid crystal display element, a CCD, a thin film magnetic head, a micromachine, etc.) using the exposure apparatus according to the embodiment of the present invention.

  As shown in FIG. 6, first, in step S10 (design step), device function and performance design (for example, circuit design of a semiconductor device) is performed, and pattern design for realizing the function is performed. Subsequently, in step S11 (reticle manufacturing step), a reticle on which the designed circuit pattern is formed is manufactured.

  On the other hand, in step S12 (wafer manufacturing step), a wafer is manufactured using a material such as silicon.

  Next, step S13 (wafer processing step) is performed using the reticle and wafer prepared in steps S10 to S12. In step 13, a resist coating process is performed to apply a photosensitive material (photoresist) on the wafer to form a photosensitive substrate, and the position of the photosensitive substrate in the Z-axis direction is detected with high accuracy using the exposure apparatus described above. Exposure processing, development processing (processing for developing the exposed photosensitive substrate and forming a mask layer having a shape corresponding to the exposed pattern on the surface of the photosensitive substrate), and etching processing (via the mask layer) The process of processing the surface of the photosensitive substrate) is performed a plurality of times to form a circuit on the wafer.

  Next, in step S14 (device assembly step), the wafer processed in step S13 is used to form chips. This step S14 includes processes such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), and the like.

  Finally, in step S15 (inspection step), inspections such as an operation confirmation test and a durability test of the manufactured device are performed. After these steps, the device is completed and shipped.

  The embodiment described above is described for facilitating the understanding of the present invention, and is not described for limiting the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design changes and equivalents belonging to the technical scope of the present invention.

  In the above-described embodiment, the case where the present invention is applied to the autofocus sensor of the autofocus mechanism for aligning the surface of the wafer W with the image plane of the projection optical system of the exposure apparatus has been described. There is no limit.

  For example, when a focus sensor to which the present invention is applied is installed at the loading position of the wafer W and the wafer W is received from a transfer unit or the like, the surface position is detected, and the wafer W is placed directly under the projection optical system. You may make it adjust the position of a Z-axis direction roughly before making it move. In other words, it may be used as a focus sensor for pre-measurement and pre-alignment.

  Further, in the above-described embodiment, the case where the present invention is applied to the step-and-scan type immersion exposure apparatus has been described. However, the reticle R and the wafer W are kept stationary while the reticle R and the wafer W are stationary. The present invention can also be applied to a step-and-repeat type immersion exposure apparatus that collectively transfers a pattern image formed on the reticle R.

  Further, instead of such a liquid immersion type exposure apparatus, a dry type exposure apparatus that performs exposure without using a liquid may be used. In other words, the present invention can be applied regardless of the exposure method and application of the exposure apparatus.

It is a figure which shows typically the whole structure of the exposure apparatus of embodiment of this invention. It is a figure which shows the structure of the autofocus sensor of embodiment of this invention. It is a figure which shows notionally the base | substrate of the wafer of the embodiment of this invention, and the projection slit image by an autofocus sensor. It is a figure which shows notionally the base | substrate of the wafer of embodiment of this invention, and the aperture image by an autofocus sensor. It is a figure which shows notionally the projection slit image which excluded the influence by the base | substrate of embodiment of this invention. It is a flowchart which shows the device manufacturing process of embodiment of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Exposure apparatus, PL ... Projection optical system, AF ... Auto focus sensor, 11 ... Light transmission optical system, 11a ... 1st light transmission optical system, 11b ... 2nd light transmission optical system, 12 ... Light reception optical system, 21 ... 1st light source, 23 ... tilt pattern plate, 28 ... detector, 29 ... control device, 31 ... second light source, 33 ... aperture pattern plate, 36 ... half prism.

Claims (5)

A first light-transmitting optical system that irradiates the first irradiation region on the test surface with the first detection light from an oblique direction;
A second light transmission optical system that irradiates a second detection light in an oblique direction to a second irradiation region that includes the first irradiation region on the test surface and is larger than the first irradiation region;
A light receiving optical system having detection means for detecting the first detection light and the second detection light reflected by the test surface;
The irradiation of the first detection light by the first light transmission optical system and the irradiation of the second detection light by the second light transmission optical system are selectively switched, and detection based on the first detection light by the detection means Control means for correcting a value by a detection value based on the second detection light by the detection means, and detecting a surface position of the test surface based on the corrected detection value;
A surface position detecting device comprising:   The surface position detection apparatus according to claim 1, wherein the first irradiation area is a plurality of line-shaped irradiation areas arranged in a predetermined pitch direction on the surface to be measured.   The surface position detection apparatus according to claim 1, wherein the first detection light and the second detection light are light in the same wavelength band. An exposure apparatus that projects and exposes a predetermined pattern on a substrate,
An exposure apparatus comprising the surface position detection device according to claim 1 to detect a surface position of the substrate. A device manufacturing method comprising:
Preparing a photosensitive substrate;
Using the exposure apparatus according to claim 4, exposing the predetermined pattern on the photosensitive substrate;
Developing the exposed photosensitive substrate and forming a mask layer having a shape corresponding to the exposed pattern on the surface of the photosensitive substrate;
Processing the surface of the photosensitive substrate through the mask layer;
A device manufacturing method comprising:

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