JP2009108382A - Target device for sputtering, and sputtering apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To form a film on workpieces of various shapes. <P>SOLUTION: A first target device 11 has a cylindrical target unit and the unit is arranged in a vacuum chamber 3 in such an attitude that its shaft center is parallel to a rotary shaft 4a of a carousel 4. A second target device 12 has an hourglass-like target unit and the unit is arranged in the vacuum chamber 3 in such an attitude that its shaft center is perpendicular to the rotary shaft 4a of the carousel 4. The surface of a target layer of the second target device 12 faces the top surface and the under surface of a workpiece 7, so that sputtered atoms deposit on and form a film on such a part as well that the film is not almost formed with only the first target device 11. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a sputtering target device and a sputtering device for forming a film on the surface of a workpiece.

  In recent years, a film forming apparatus for forming an optical thin film such as an antireflection film, an insulating film, a protective film, or the like on a workpiece to be formed is known. In the sputtering apparatus, the vacuum chamber is filled with a thin sputtering gas, and glow discharge is performed in the vacuum chamber using the target as one electrode. Then, the plasma cations generated by the glow discharge collide with the target material, and atoms (sputtered atoms) knocked out of the target are deposited on the work surface to form a thin film. Also known is reactive sputtering in which a reactive gas such as oxygen gas or nitrogen gas is introduced into a vacuum chamber in addition to the sputtering gas to form a compound thin film.

  In order to improve the efficiency of sputtering, magnetron sputtering in which a magnetic field is applied near the surface of a target is known. In this magnetron sputtering, a magnet or the like is arranged on the back side of the target so that a magnetic field is generated in the vicinity of the target surface and the plasma generated by glow discharge is confined in the vicinity of the target surface.

  By the way, the emission angle of the sputtered atoms knocked out from the surface of the target, that is, the angle formed between the direction in which the sputtered atoms are scattered and the normal of the target surface can take various angles, but the larger the emission angle, The number of sputtered atoms that scatter tends to be small. For this reason, a thin film is mainly formed in the surface facing the surface of a target. However, on the other hand, the work to be deposited varies from a flat one to a three-dimensional complicated shape. For this reason, there is a problem that if the work is simply placed or passed in front of the target, film formation cannot be performed on a portion other than the surface facing the target, or only a considerably thin film is formed.

  In addition, by making the target sufficiently long with respect to the workpiece, it is possible to increase the number of sputtered atoms having a large emission angle and to form a thin film having a desired thickness on the surface of the workpiece on which only a thin thin film is formed. In this case, there is a problem that the target becomes longer and the sputtering apparatus becomes larger.

  The present invention has been made to solve the above-described problems, and provides a sputtering target device and a sputtering device that can satisfactorily form a film on a workpiece having various shapes. Objective.

  In order to achieve the above object, in the sputtering target device according to the first aspect of the present invention, the cylindrical target that disperses the sputtered atoms from the outer peripheral surface has a diameter of the outer peripheral surface toward one end or both ends toward the end. A gradually increasing part is provided.

  In the sputtering target device according to claim 2, the target is formed into a nail shape in which gradually increasing portions are provided at both ends, and the diameter of the outer peripheral surface gradually increases from the center toward each end.

  The sputtering target device according to claim 3 is provided with a rotating mechanism for rotating the target about its axis.

  The sputtering target device according to claim 4 is provided with a magnet that is disposed in the hollow portion of the target, generates a magnetic field in the vicinity of the outer peripheral surface of the target, and distributes the magnetic field along the generatrix direction of the target.

  The sputtering apparatus according to claim 5 includes the target device described above and a transport unit that transports the workpiece in a predetermined direction in the vacuum chamber, and the target is disposed so that its bus bar is orthogonal to the transport direction of the workpiece. Is.

  The sputtering apparatus according to claim 6, comprising the target device described above and a transport means for rotating and transporting the workpiece in the vacuum chamber, the target being arranged in parallel to the workpiece transport direction, and the outer peripheral surface thereof. And the transport surface are almost equidistant.

  In the sputtering apparatus according to claim 7, the peripheral surface is opposed to a transport unit that transports the work in a predetermined direction in the vacuum chamber, and a transport surface on which the work is transported by the transport unit, and the transport direction and the bus are orthogonal to each other. And having a cylindrical first target disposed in a vacuum chamber, discharging the first target as one electrode in a sputtering gas atmosphere, and depositing atoms scattered from the first target material on the workpiece A first target device for forming a film, and a cylindrical second target disposed in the vacuum chamber so that the circumferential surface faces the transport surface and the first target and the bus are orthogonal to each other; A second target for forming a film by discharging in a sputtering gas atmosphere using the second target as one electrode, and depositing atoms scattered from the second target on the workpiece It is that a location.

  The sputtering apparatus according to claim 8, wherein the transport unit has a work holder that holds and rotates the work, and the first target has a bus line parallel to the rotation axis of the work holder, and the second target. Is such that its generatrix is orthogonal to the rotation axis of the work holder.

  The sputtering apparatus according to claim 9, wherein the first and second target devices have rotating means for rotating the first and second targets about their respective axes while film formation is being performed. The target of No. 2 is formed into a tsumi shape in which the diameter of the outer peripheral surface gradually increases from the center to the end so that the outer peripheral surface and the transport surface are substantially equidistant.

  The sputtering apparatus according to claim 10, wherein the transport unit holds a plurality of workpieces at a constant pitch in the axial direction of the first target, and the second target device has an axis of the first target at the pitch. The plurality of second targets are arranged along the center direction and are shifted from a position facing the workpiece by 1/2 of the pitch.

  In the sputtering apparatus according to claim 11, the first and second target apparatuses have magnets that are arranged in the hollow portions of the respective targets and generate a magnetic field in the vicinity of the outer peripheral surface facing the transport surface.

  According to the present invention, the cylindrical target that disperses the sputtered atoms from the outer peripheral surface is provided with a gradually increasing portion where the diameter of the outer peripheral surface gradually increases toward the end at one or both ends. Since the sputtered atoms are scattered in the inclined direction, the film can be efficiently formed on the surface of the workpiece facing various directions. In addition, it is not necessary to lengthen the target in order to perform film formation on surfaces facing various directions, which is advantageous for downsizing of the sputtering apparatus.

  Further, according to the present invention, each of the cylindrical first target and the second target is arranged so that the peripheral surface thereof faces the workpiece conveyance surface, and the bus for the first target is orthogonal to the conveyance direction, About the second target, since the first target and the bus are arranged so as to be orthogonal to each other and sputtering is performed, not only the surface facing the first target but also the radial direction of the second target. A film can be efficiently formed on a certain surface.

  The structure of the sputtering apparatus 2 which implemented this invention is shown in FIG. A cylindrical carousel 4 as a work holder, which is a part of the conveying means, is arranged inside a substantially cylindrical vacuum chamber 3. The carousel 4 is rotatable about a vertical rotation shaft 4 a and is rotated at a predetermined speed by a motor 5. A vacuum pump 6 is connected to the vacuum chamber 3, and the inside thereof is adjusted so as to have a degree of vacuum necessary for sputtering. Note that the carousel 4 may be rotated about a horizontal rotation axis.

  The carousel 4 holds a plurality of workpieces 7 to be deposited on its outer peripheral surface, and each workpiece 7 rotates together with the carousel 4. That is, the work 7 is transported on the transport surface by the rotation of the carousel 4 with the peripheral surface of the carousel 4 as the transport surface. A plurality of workpieces 7 are arranged at a constant pitch in the vertical direction and the circumferential direction, and are held in a matrix array along the outer circumferential surface of the carousel 4.

  Note that the vacuum chamber 3 can be opened by a well-known structure after leaking to atmospheric pressure for the work of loading and unloading the carousel 4 and the workpiece 7, the replacement of the target unit unit described later, and inspection and maintenance. . The workpiece 7 may be made of various materials such as metal and plastic.

  In the vacuum chamber 3, a first film forming stage 8 and a second film forming stage 9 are provided at an appropriate interval along the rotation direction of the carousel 4. By rotating the carousel 4, each workpiece 7 is repeatedly passed through the first film formation stage 8 and the second film formation stage 9, and film formation is performed under the control of the control unit 10.

  The first film formation stage 8 is provided with a first target device 11, and the second film formation stage 9 is provided with a second target device 12. In this example, two first target devices 11 are arranged on the first film formation stage 8 in the carousel rotation direction, and four second target devices 12 are arranged on the second film formation stage 9 as will be described later. 4 are arranged side by side in the rotation axis direction (vertical direction). Note that the number of film forming stages and the number of target devices can be appropriately increased or decreased according to the type of film to be formed, the number of stacked layers, the arrangement of workpieces, and the like.

  The 1st drive device 14 drives each 1st target device 11, and performs sputtering by this. In order to drive the first target device 11, the first drive device 14 supplies electric power, sputtering gas, and cooling water that prevents the first target device 11 from becoming high temperature. The opening / closing operation of the shutter plate 15 provided on the substrate, the rotation of the target and the like are performed.

  When supplying power to the first target device 11, the first drive device 14 applies a voltage so that the vacuum chamber side including the carousel 4 is an anode and the first target device 11 is a cathode. The first driving device 14 supplies, for example, argon gas as a sputtering gas. When reactive sputtering is performed, a reactive gas such as oxygen gas or nitrogen gas is supplied in addition to the sputtering gas.

  The second driving device 16 drives each second target device 11. In order to drive the second target device 12, the second drive device 14 supplies electric power, sputtering gas or reaction gas, and cooling water in the same manner as the first drive device 14. The opening / closing operation of the provided shutter plate 17 and the rotation of the target are performed.

  A heater 18 is disposed along the inner peripheral surface of the vacuum chamber 3. The heater 18 is activated when the work 7 is made of metal, and heats the work 7 to a high temperature in order to perform stable film formation. Various methods for heating the workpiece 7 can be used. For example, when the workpiece 7 is a metal having a certain degree of electrical resistance, induction heating using electromagnetic induction can be used.

  As shown in FIGS. 2 and 3, the first target device 11 includes a target unit 21, a jacket 22, and the like in addition to the shutter plate 15. The jacket 22 has a hollow cylindrical shape fixed to the vacuum chamber 3, and a cylindrical target unit 21 is accommodated therein. The target unit 21 is provided coaxially with the jacket 22, and is rotatable about an axis 21 a (see FIG. 7) within the jacket 22.

  The jacket 22 is provided with an opening 22a, and the outer peripheral surface of the target unit 21 is exposed from the opening 22a. The first target device 11 is assembled in the vacuum chamber 3 in such a posture that the opening 22a is directed to the carousel 4 side, that is, the conveyance surface, and the bus bar and the axis 21a of the target unit 21 are parallel to the rotating shaft 4a of the carousel 4. Have

  A gap having an appropriate width is provided between the target unit 21 and the jacket 22, and sputtering gas or reaction gas is supplied to the gap via an introduction pipe 24 connected on the back side of the jacket 22. The area around 21 is in a gas-rich state.

  The target unit 21 includes a cylindrical support cylinder 25 having conductivity and a target layer 26. The target layer 26 is formed in a cylindrical shape by spraying or the like so as to cover the outer peripheral surface of the support cylinder 25, and serves as a target for scattering sputtered atoms from the outer peripheral surface. The target layer 26 is made of a material to be deposited on the work 7 such as aluminum, titanium, silicon, or the like. A negative electrode of the first driving device 14 is connected to the support cylinder 25, and glow discharge is performed using the target layer 26 as a cathode during film formation.

  A hollow tube 27 fixed to the jacket 22 is inserted into the hollow portion of the target unit 21, and a magnet unit 28 for performing magnetron sputtering is disposed inside the sealed portion. In the magnet unit 28, small magnets 28b and 28c are fixed to an iron support member 28a. The support member 28a is elongated in the axial direction of the support cylinder 25, and the magnets 28b are arranged in a line along the axial direction in the center of the carousel side surface of the support member 28a with the N pole facing the carousel side. The magnet 28c is arranged in a rectangle so as to surround the periphery of the magnet 28b with the south pole facing the carousel side. The magnet knit 28 is arranged such that lines of magnetic force appear on the outer peripheral surface of the portion of the target layer 26 exposed from the opening 22a.

  The magnet unit 28 configured as described above generates magnetic lines of force orthogonal to the generatrix of the target layer 26 on the outer peripheral surface of the target layer 26, thereby confining the plasma in the vicinity of the surface of the target layer. Further, the hollow cylinder 27 is arranged eccentrically so as to be close to the carousel side in the support cylinder 25, and the effect is enhanced by bringing the magnets 28b, 28c closer to the target layer 26. Further, the target unit 21 rotates around the shaft center 21a when the rotation from the first drive device 14 is transmitted to the drive shaft 21b. Thereby, the entire peripheral surface of the target layer 26 is subjected to sputtering.

  Cooling water from the first drive device 14 is supplied between the support cylinder 25 and the hollow cylinder 27 through the water supply pipe 29a, and the cooling water passing between the support cylinder 25 and the hollow cylinder 27 passes through the drain pipe 29b. The water is drained out of the vacuum chamber 3. Thus, by passing cooling water between the support cylinder 25 and the hollow cylinder 27, the target unit 21, the magnet unit 28, and the like are prevented from becoming high temperature.

  The shutter plate 15 is arranged outside the jacket 22 and is retracted from the front of the opening 22a and the closed position that is located in front of the opening 22a and covers the opening 22a around the water supply pipe 29a and the drainage pipe 29b, for example. The target layer 26 is movable between an open position where the target layer 26 is exposed to the carousel 4 side. The shutter plate 15 is moved between the open position and the closed position by the first driving device 14.

  As shown in FIGS. 4 to 6, the second target device 12 has the same configuration as the first target device 11, and includes a shutter plate 17, a target unit 31, a jacket 32, and the like. The jacket 32 has a hollow cylindrical shape and is fixed to the vacuum chamber 3, and the target unit 31 is accommodated therein. The target unit 31 is provided coaxially with the jacket 32, and is rotatable within the jacket 32 about its axis 31a.

  The outer peripheral surface of the target unit 31 is exposed from the opening 32 a provided in the jacket 32. Further, a sputtering gas or a reaction gas is supplied to the gap between the target unit 31 and the jacket 32 through the introduction pipe 34.

  The target unit 31 has the same configuration as that of the target unit 21 except that the shape is different. The target unit 31 includes a conductive support cylinder 35 and a target layer 36 formed on the outer peripheral surface thereof. The target layer 36 is a target that scatters sputtered atoms from the outer peripheral surface thereof. A hollow tube 37 fixed to the jacket 32 is disposed in the hollow portion of the support tube 35, and a magnet unit 38 is disposed in the hollow tube 37.

  A negative electrode of the second driving device 16 is connected to the support cylinder 35, and glow discharge is performed using the target layer 36 as a cathode. Further, the rotation from the second drive device 16 is transmitted to the drive shaft 31b, whereby the target unit 31 is rotated about its axis 31a, and the entire peripheral surface of the target layer 36 is used for sputtering.

  Further, the cooling water from the second driving device 16 is introduced between the support cylinder 35 and the hollow cylinder 37 via the water supply pipe 39a and drained from the drain pipe 39b, so that the target unit 31, the magnet unit 38, etc. Prevent high temperatures. The shutter plate 17 is moved by the second driving device 16 between a closed position covering the opening 32a and an open position retracted from the front of the opening 32a.

  The second target device 12 is vacuumed so that the peripheral surface of the target layer 36 faces the transport surface of the work 7 by the carousel 4 and the axis 31a of the target unit 21 of the first target device 11 is orthogonal to the axis. It is incorporated in the tank 3.

  The target layer 36 has a gradually increasing portion G where the diameter of the outer peripheral surface thereof gradually increases toward the end portion, and has a Tsutsu shape in which the diameter gradually increases from the central portion toward each end portion. Further, the diameter of the outer peripheral surface is determined so that the distance (indicated by symbol D in FIG. 5) between the carousel 4, that is, the conveyance surface of the workpiece 7 and the surface of the target layer 36 is substantially constant.

  Thus, by making the distance between the transport surface and the surface of the target layer 36 substantially constant, the discharge performed using the target layer 36 as one electrode in the axial direction of the target unit 31 is made uniform. Yes. In this example, the support cylinder 35 is formed in the shape of a nail, and the target layer 36 is formed by coating the outer peripheral surface with a predetermined material by thermal spraying. In this example, the material of the target layer 36 is the same as that of the first target device 11. In addition, by providing the gradual increase part G as mentioned above, there exists an advantage that film-forming can also be effectively performed with respect to each surface which faces the advancing direction of the workpiece | work 7, and its reverse direction.

  Similarly to the magnet unit 28, the magnet unit 38 has a configuration in which magnets 38b are arranged in the axial direction of the target unit 31 on an iron support member 38a, and magnets 38c are arranged around the magnet unit 38b. The magnets 38c have their south poles facing the carousel side. Due to the magnet unit 38, magnetic force lines perpendicular to the generatrix appear on the surface of the target layer 36 exposed from the opening 32a. In order to enhance the effect of the magnet unit 38, the hollow cylinder 37 is eccentrically arranged in the support cylinder 35 so as to approach the carousel side.

  In order to further enhance the effect of the magnet unit 38, the magnets 38b and 38c of the magnet unit 38 may be curved and arranged along the surface shape of the target layer 36. Further, when the erosion progress of the target layer 36 varies due to uneven magnetic field distribution or the like, the thickness of the portion of the target layer 36 where the erosion progresses quickly may be increased.

  As schematically shown in FIG. 7, the respective first target devices 11 are arranged on the outer periphery of the carousel 4 at appropriate intervals along the rotation direction of the carousel 4. Each of the first target devices 11 is arranged in such a posture that the opening 22 a faces the carousel 4 and the axis 21 a of the target unit 21 is parallel to the rotation axis 4 a of the carousel 4, that is, a posture orthogonal to the conveyance direction of the workpiece 7. ing. Thus, the workpieces 7 held in the carousel 4 and arranged in the vertical direction face the target layer 26 through the openings 22a.

  A plurality of second target devices 12 are arranged on the outer periphery of the carousel 4 in the vertical direction along the rotation axis 4 a of the carousel 4. Each of the second target devices 12 is arranged in such a posture that the opening 32a faces the carousel 4 and the axis 31a of the target unit 31 is orthogonal to the rotation axis 4a of the carousel 4, that is, the attitude orthogonal to the axis 21a of the target unit 21. Has been.

  The distribution of the emission angles of the sputtered atoms emitted from the surface of the target layer 36 is the largest in the normal direction of the surface of the target layer 36 at the emission position. Further, as shown in FIG. 6, a large amount of plasma P is distributed in the vicinity of the surfaces of the two target layers 36 corresponding to the magnetic field generated between the magnets 38b and 38c.

  For this reason, the vertical arrangement of the second target device 12 is set to the same pitch as the vertical pitch Pc of each workpiece 7 and is shifted in the vertical direction by 1/2 pitch with respect to the position of the workpiece 7. Thereby, the film of the first target device 11 is hardly formed, for example, the upper surface 7a and the lower surface 7b of the box-shaped workpiece 7 are made to face the surface of the target layer 36 in which the plasma P is largely distributed, and the upper surfaces thereof. 7a and the lower surface 7b are efficiently formed. In the present invention, the workpiece 7 is not limited to a box shape.

  Next, the operation of the above configuration will be described. The vacuum chamber 3 is opened and a work 7 to be deposited is attached to the carousel 4. Thereafter, the vacuum chamber 3 is closed, and the vacuum pump 6 is operated to make the vacuum chamber 3 have a degree of vacuum necessary for sputtering. When the work 7 is made of metal, the carousel 4 starts rotating and then the heater 18 is energized to heat the work 7 rotating together with the carousel 4.

  When it is detected by a temperature sensor (not shown) that the workpiece 7 has reached a predetermined temperature, a sputtering process is started. First, a sputtering gas and, if necessary, a reactive gas are supplied between the target unit 21 and the jacket 22 of the first target device 11, and these gases flow into the vacuum chamber 3 through the opening 22 a. As a result, the surface of the target layer 26 is placed in an atmosphere rich in sputtering gas and reaction gas.

  After confirming that the shutter plate 15 is in the closed position and starting the rotation of the target unit 21, a voltage is applied between the carousel 4 and the target unit 21 by the first driving device 14. As a result, discharge is started between the carousel 4 and the target unit 21 through the conductive shutter plate 15, and plasma of sputtering gas is generated. When film formation can be performed in a stable state, the shutter plate 15 is set to the open position, and film formation by the first target device 11 is started.

  Sputtered atoms struck from the surface of the target layer 26 are scattered, and a target material is deposited on the surface of the work 7 to form a film. In the case of introducing the reactive gas, the sputtered atoms come into contact with the reactive gas atoms and ions existing along the path toward the workpiece 7, so that the surface of the workpiece 7 has a target material such as a nitride or an oxide. Are deposited to form a film.

  Similarly, a sputtering gas and a reactive gas are supplied to the second target device 12 so that the surface of the target layer 36 is placed in an atmosphere rich in the sputtering gas and the reactive gas. After confirming that the shutter plate 17 is in the closed position and starting the rotation of the target unit 31, the second driving device 16 starts discharging between the carousel 4 and the target unit 21 through the conductive shutter plate 17. And plasma is generated. When film formation can be performed in a stable state, the shutter plate 17 is set to the open position, and film formation on the work 7 by the second target device 12 is started.

  As described above, film formation is performed on the work 7. For example, when film formation is performed on the box-shaped work 7, the film is formed by the first target device each time the work 7 passes the first film formation stage 8. Formed. At this time, sputter atoms are deposited on the surface of the work 7 facing the target layer 26 to form a film. However, since the upper surface 7a and the lower surface 7b do not face the target layer 26, almost no sputter atoms are deposited. A film cannot be formed. However, since the upper surface 7a and the lower surface 7b face the target layer 36 of the second target device 12 when passing through the second film forming stage 9, sputtered atoms can be deposited on them to form a film.

  In the said embodiment, although the 1st target apparatus and the 2nd target apparatus are operated simultaneously, these operation start timing and completion | finish timing can be set suitably.

  FIG. 8 shows an outline of the main part of the second embodiment. In the second embodiment, a cylindrical target provided with a gradually increasing portion is arranged so that its bus bar is orthogonal to the workpiece conveyance direction. Except for the details described below, the configuration is the same as that of the above-described embodiment, and substantially the same components are denoted by the same reference numerals and detailed description thereof is omitted.

  In the sputtering apparatus 44 in this example, a target apparatus 45 is used. The target device 45 includes a target unit 46, a jacket 47, and the like. The target unit 46 is rotated about its axis 46a, and the axis 46a is arranged in a posture parallel to the rotation axis 4a of the carousel 4, that is, perpendicular to the conveying direction of the workpiece 7.

  In order to improve the film forming efficiency on the upper surface 7a, 7b other than the surface facing the outer periphery of the workpiece 7 held by the carousel 4, the target unit 46 has a diameter of the outer peripheral surface gradually increasing toward the end. It has a gradually increasing portion G at both ends, and has a knob shape whose diameter gradually increases from the central portion toward each end portion. In addition, the length of the portion of the target unit 46 used for sputtering, in this example, the total length in the direction of the axis 46a of each gradually increasing portion G is slightly longer than the width H of the conveying surface of the workpiece 7. . In addition, the other structure of the target apparatus 45 is the same as that of the 2nd target apparatus 12 of the said embodiment.

  In the target device 46 configured in this manner, a large amount of scattering occurs in the normal direction of the surface of the gradually increasing portion G. The number of sputtered atoms increases. As a result, it is possible to efficiently form a film other than the surface of the work 7 held by the carousel 4 and facing the outer periphery. Further, since the gradual increase portion G is provided to obtain a large number of sputter atoms necessary for film formation on the upper surface 7a, the lower surface 7b, etc., the length of the target unit 46 is set as described above. Therefore, the sputtering apparatus 44 can be downsized. Note that the workpiece 7 is not limited to a box shape, and it is possible to improve the film formation efficiency on each surface of workpieces of various shapes.

  It should be noted that the mode of increasing the diameter of the gradually increasing portion, the length, and the like can be appropriately determined based on the shape of the workpiece to be deposited, the distance between the target unit and the transfer surface, and the like. Further, as shown in FIG. 9, the shaft center 46 a of the target unit 46 may be arranged to be inclined with respect to the rotation shaft 4 a of the carousel 4.

  The gradually increasing portion of the target unit in each of the above embodiments has an arc-shaped cross section, but is not limited thereto, and the gradually increasing portion is a target whose diameter of the outer peripheral surface gradually increases toward the end portion. It is only necessary to be provided at one end or both ends of the unit. For example, in the target unit 51 shown in FIG. 10A, a gradually increasing portion G1 in which the diameter of the outer peripheral surface increases linearly from the central portion is provided at both ends. Further, in the target unit 52 shown in FIG. 10B, a central portion 52a having an appropriate length having the same outer peripheral surface diameter is provided, and each end portion of the central portion 52a is connected to the end portion of the target unit 52. A gradually increasing portion G2 whose diameter gradually increases is provided. Further, in the target unit 53 shown in FIG. 10C, a gradually increasing portion G3 is provided so that the diameter gradually increases from one end to the other end.

  In each of the above-described embodiments, the example in which the work is held in the carousel and the work is rotated together with the carousel has been described. However, the form of conveyance is not limited thereto. For example, the work may be conveyed linearly, or the film may be formed by passing the work once through each film forming stage. When the workpiece is conveyed linearly, the axis of the target unit is arranged in parallel with the width direction of the conveyance path through which the workpiece is conveyed, and the axis of the target unit in the workpiece conveyance direction. A second target device that is arranged in parallel may be used. Alternatively, the target unit having a gradually increasing portion may be arranged at the rotation center position of the work to be rotated and transported to perform film formation.

It is explanatory drawing which shows the structure of the film-forming apparatus using this invention. It is a perspective view which shows the external appearance of a 1st target apparatus. It is sectional drawing of a 1st target apparatus. It is a perspective view which shows the external appearance of a 2nd target apparatus. It is explanatory drawing which notches a part of 2nd target apparatus and shows the internal structure. It is sectional drawing of a 2nd target apparatus. It is explanatory drawing which shows arrangement | positioning of a 1st, 2nd target apparatus from a side. It is explanatory drawing which shows 2nd Embodiment which has arrange | positioned the target unit which has a gradually increasing part along the rotating shaft direction of the carousel. It is explanatory drawing which shows the example which arrange | positions the target unit inclining. It is explanatory drawing which shows the different shape of a gradually increasing part.

Explanation of symbols

2,44 Sputtering device 3 Vacuum chamber 4 Carousel 11 First target device 12 Second target device 21, 31, 46, 51-53 Target unit 26, 36 Target layer G, G1-G3 Gradually increasing part

Claims (11)

In the sputtering target device provided with a cylindrical target that scatters sputter atoms from the outer peripheral surface,
The sputtering target apparatus according to claim 1, wherein the target is provided with a gradually increasing portion at one end or both ends where the diameter of the outer peripheral surface gradually increases toward the end.   2. The sputtering target device according to claim 1, wherein the target has a tsunami shape in which the gradually increasing portions are provided at both ends, and the diameter of the outer peripheral surface gradually increases from the center toward each end portion. .   The sputtering target apparatus according to claim 1, further comprising a rotation mechanism that rotates the target about its axis.   4. The magnet according to claim 1, further comprising a magnet that is disposed in a hollow portion of the target, generates a magnetic field in the vicinity of an outer peripheral surface of the target, and distributes the magnetic field along a generatrix direction of the target. The sputtering target device according to Item.   5. A target device according to claim 1, and a transport unit configured to transport a workpiece in a predetermined direction in a vacuum chamber, wherein the target has a bus line orthogonal to a workpiece transport direction. Sputtering apparatus characterized by being arranged in.   A target device according to any one of claims 1 to 4 and a conveying means for rotating and conveying a workpiece in a vacuum chamber, wherein the target is arranged with its busbar parallel to the workpiece conveying direction. The sputtering apparatus is characterized in that the outer peripheral surface and the transport surface are substantially equidistant. A conveying unit that conveys a workpiece in a predetermined direction in the vacuum chamber, and a circumferential surface is opposed to a conveyance surface on which the workpiece is conveyed by the conveying unit, and the conveyance direction and the bus are arranged in the vacuum chamber so as to be orthogonal to each other. A first target having a cylindrical shape is formed by performing discharge using the first target as one electrode in an atmosphere of a sputtering gas, and depositing atoms scattered from the first target material on the workpiece. 1 target device;
A cylindrical second target disposed in a vacuum chamber with a peripheral surface facing the transport surface, and the first target and a bus line orthogonal to each other, and the second target in a sputter gas atmosphere A sputtering apparatus, comprising: a second target device that forms a film by discharging the target as one electrode and depositing atoms scattered from the second target on the workpiece.   The transport means includes a work holder that holds and rotates a work, and the first target has a bus line parallel to the rotation axis of the work holder, and the second target has a bus bar The sputtering apparatus according to claim 7, wherein the sputtering apparatus is orthogonal to a rotation axis of the work holder.   The first and second target devices have rotating means for rotating the first and second targets around their respective axes while film formation is being performed. The sputtering apparatus according to claim 8, wherein the outer peripheral surface and the transport surface are in the shape of a knob in which the diameter of the outer peripheral surface gradually increases from the center toward the end so that the distance is substantially equal.   The conveying means holds a plurality of workpieces at a constant pitch in the axial direction of the first target, and the second target device is arranged along the axial direction of the first target at the pitch. 10. The sputtering apparatus according to claim 7, further comprising: a plurality of the second targets that are arranged so as to be shifted from a position facing the work by ½ of the pitch.   The said 1st and 2nd target apparatus has a magnet which generate | occur | produces a magnetic field near the outer peripheral surface which is distribute | arranged in the hollow part of each said target, and opposes the said conveyance surface. A sputtering apparatus according to claim 1.

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