JP2008509544A - マイクロリソグラフィ用の投影対物レンズ - Google Patents
マイクロリソグラフィ用の投影対物レンズ Download PDFInfo
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- JP2008509544A JP2008509544A JP2007524269A JP2007524269A JP2008509544A JP 2008509544 A JP2008509544 A JP 2008509544A JP 2007524269 A JP2007524269 A JP 2007524269A JP 2007524269 A JP2007524269 A JP 2007524269A JP 2008509544 A JP2008509544 A JP 2008509544A
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- 238000001393 microlithography Methods 0.000 title description 3
- 230000003287 optical effect Effects 0.000 claims abstract description 43
- 238000003384 imaging method Methods 0.000 claims abstract description 27
- 230000005484 gravity Effects 0.000 claims abstract description 26
- 238000005452 bending Methods 0.000 claims description 12
- 230000001419 dependent effect Effects 0.000 claims description 9
- 230000000694 effects Effects 0.000 abstract description 5
- 230000002411 adverse Effects 0.000 abstract description 2
- 230000008859 change Effects 0.000 description 11
- 238000005286 illumination Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 230000004075 alteration Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 201000009310 astigmatism Diseases 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009897 systematic effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000671 immersion lithography Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/703—Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
【解決手段】投影対物レンズの物体面上に配置されたパターンを投影対物レンズの像面として縮小結像尺度で結像する投影対物レンズにおいて、投影対物レンズの光軸に沿って配置された複数の光学素子であって、投影対物レンズに対して凸状に湾曲した物体面を平面的な像面として結像することができるように、投影対物レンズの限定像側視野湾曲を設定するように構成された複数の光学素子を有する。
【選択図】図1
Description
|RP|≧0.1DOF
が当てはまる。
RP=h’2/(2・s’)
に従って以下のことが当てはまる。曲がりsを有するマスクを平面的な像面上に結像することができる光学系のペッツヴァル和1/RPは、次の方程式(2):
Claims (10)
- 投影対物レンズの物体面上に配置されたパターンを投影対物レンズの像面として縮小結像尺度で結像する投影対物レンズにおいて、
投影対物レンズの光軸に沿って配置された複数の光学素子であって、投影対物レンズに対して凸状に湾曲した物体面を平面的な像面として結像することができるように、投影対物レンズの限定像側視野湾曲を設定するように構成された複数の光学素子を有する、投影対物レンズ。 - 物体面は、光軸に対して垂直な少なくとも一方向の有効物体面湾曲が、マスクの重力に左右されるマスク曲がりから生じる表面湾曲に実質的に対応するように湾曲している、請求項1に記載の投影対物レンズ。
- 投影対物レンズは、走査方向に移動することができるマスクとともに使用するように構成され、また物体面は、スキャナ組み込み式物体面の走査方向の湾曲が、重力に左右されるマスクの曲がりによって生じる表面湾曲に対応するように湾曲している、請求項1に記載の投影対物レンズ。
- 投影対物レンズの少なくとも1つの光学素子が、少なくとも1つの非回転対称面を支持する、請求項1に記載の投影対物レンズ。
- 非回転対称面は、像側視野湾曲に影響を与えるように構成された円環状面である、請求項4に記載の投影対物レンズ。
- 像側視野湾曲を除いたすべての視野依存形像エラーに関して実質的に補正される、請求項1に記載の投影対物レンズ。
- 像側視野湾曲を除いたすべての像エラーに関して実質的に補正される、請求項1に記載の投影対物レンズ。
- 像側開口数NA>0.8である、請求項1に記載の投影対物レンズ。
- |RP|がペッツヴァル和の大きさであり、DOFが投影対物レンズの焦点深度であるとき、|RP|≧0.1DOFが当てはまる、請求項1に記載の投影対物レンズ。
- 投影対物レンズの物体面上に配置されたパターンを投影対物レンズの像面として縮小結像尺度で結像する投影対物レンズであって、
投影対物レンズの光軸に沿って配置された複数の光学素子であって、投影対物レンズに対して凸状に湾曲した物体面を平面的な像面として結像することができるように、投影対物レンズの限定像側視野湾曲を設定するように構成された複数の光学素子を有し、物体面は、光軸に対して垂直な少なくとも一方向の有効物体面湾曲が、マスクの重力に左右されるマスク曲がりから生じる表面湾曲に実質的に対応するように湾曲し、また、|RP|がペッツヴァル和の大きさであり、DOFが投影対物レンズの焦点深度であるとき、|RP|≧0.1DOFが当てはまる、投影対物レンズ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US59905504P | 2004-08-06 | 2004-08-06 | |
US60/599,055 | 2004-08-06 | ||
PCT/EP2005/008392 WO2006013100A2 (en) | 2004-08-06 | 2005-08-03 | Projection objective for microlithography |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008509544A true JP2008509544A (ja) | 2008-03-27 |
JP2008509544A5 JP2008509544A5 (ja) | 2008-06-19 |
JP4833211B2 JP4833211B2 (ja) | 2011-12-07 |
Family
ID=34978760
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007524269A Expired - Fee Related JP4833211B2 (ja) | 2004-08-06 | 2005-08-03 | マイクロリソグラフィ用の投影対物レンズ |
Country Status (3)
Country | Link |
---|---|
US (4) | US8212988B2 (ja) |
JP (1) | JP4833211B2 (ja) |
WO (1) | WO2006013100A2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7949548B2 (en) * | 2006-03-08 | 2011-05-24 | Guy Carpenter & Company | Spatial database system for generation of weather event and risk reports |
CN101681092B (zh) * | 2007-05-09 | 2012-07-25 | 株式会社尼康 | 光罩用基板、光罩用基板的成形构件、光罩用基板的制造方法、光罩、及使用光罩的曝光方法 |
DE202008016307U1 (de) | 2008-12-09 | 2009-04-02 | Carl Zeiss Smt Ag | Retikel mit einer abzubildenden Struktur, Projektionsoptik zur Abbildung der Struktur sowie Projektionsbelichtungsanlage mit einer derartigen Projektionsoptik |
EP2219077A1 (en) | 2009-02-12 | 2010-08-18 | Carl Zeiss SMT AG | Projection exposure method, projection exposure system and projection objective |
DE102011086513A1 (de) | 2011-11-16 | 2013-05-16 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage für die Mikrolithographie |
DE102012211256A1 (de) | 2012-06-29 | 2014-01-02 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage für die Projektionslithographie |
KR102340171B1 (ko) * | 2014-02-24 | 2021-12-16 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 방법 |
DE102015212619A1 (de) * | 2015-07-06 | 2017-01-12 | Carl Zeiss Smt Gmbh | Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik |
CN105447228B (zh) * | 2015-11-11 | 2018-10-19 | 中国人民解放军国防科学技术大学 | 一种地球扰动引力赋值模型适用性能评估方法 |
CN107977486B (zh) * | 2017-11-06 | 2019-08-09 | 北京宇航系统工程研究所 | 一种地球扰动引力场球冠谐模型阶次扩展方法及系统 |
DE102018218107A1 (de) | 2018-10-23 | 2018-12-20 | Carl Zeiss Smt Gmbh | Optische Anordnung zur Bauteilinspektion von Bauteilen mit einer gekrümmten Oberfläche und Inspektionsverfahren hierzu |
Citations (4)
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EP1231513A1 (en) * | 2001-02-08 | 2002-08-14 | Asm Lithography B.V. | Lithographic projection apparatus with adjustable focal surface |
US20030090640A1 (en) * | 2001-11-02 | 2003-05-15 | Tadahito Fujisawa | Exposure method and apparatus |
JP2003203848A (ja) * | 2002-01-08 | 2003-07-18 | Canon Inc | 走査露光装置及びその製造方法並びにデバイス製造方法 |
US20060144211A1 (en) * | 2004-11-19 | 2006-07-06 | Yoshimoto Inc. | Data input device and data input method |
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JP3307988B2 (ja) | 1992-07-17 | 2002-07-29 | 株式会社ニコン | 投影露光方法及び装置 |
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JP3341269B2 (ja) * | 1993-12-22 | 2002-11-05 | 株式会社ニコン | 投影露光装置、露光方法、半導体の製造方法及び投影光学系の調整方法 |
JP3231241B2 (ja) * | 1996-05-01 | 2001-11-19 | キヤノン株式会社 | X線縮小露光装置、及び該装置を用いた半導体製造方法 |
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JP2003178971A (ja) * | 2002-10-24 | 2003-06-27 | Nikon Corp | 投影露光装置及び投影露光方法 |
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-
2005
- 2005-08-03 US US11/658,574 patent/US8212988B2/en not_active Expired - Fee Related
- 2005-08-03 WO PCT/EP2005/008392 patent/WO2006013100A2/en active Application Filing
- 2005-08-03 JP JP2007524269A patent/JP4833211B2/ja not_active Expired - Fee Related
-
2012
- 2012-06-29 US US13/537,892 patent/US9217932B2/en not_active Expired - Fee Related
-
2015
- 2015-12-14 US US14/967,448 patent/US9568838B2/en not_active Expired - Fee Related
-
2017
- 2017-02-13 US US15/431,754 patent/US20170248850A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1231513A1 (en) * | 2001-02-08 | 2002-08-14 | Asm Lithography B.V. | Lithographic projection apparatus with adjustable focal surface |
US20030090640A1 (en) * | 2001-11-02 | 2003-05-15 | Tadahito Fujisawa | Exposure method and apparatus |
JP2003203848A (ja) * | 2002-01-08 | 2003-07-18 | Canon Inc | 走査露光装置及びその製造方法並びにデバイス製造方法 |
US20060144211A1 (en) * | 2004-11-19 | 2006-07-06 | Yoshimoto Inc. | Data input device and data input method |
Also Published As
Publication number | Publication date |
---|---|
US9568838B2 (en) | 2017-02-14 |
US8212988B2 (en) | 2012-07-03 |
US20080252987A1 (en) | 2008-10-16 |
US20120327382A1 (en) | 2012-12-27 |
WO2006013100A3 (en) | 2006-07-06 |
US20170248850A1 (en) | 2017-08-31 |
WO2006013100A2 (en) | 2006-02-09 |
US20160170307A1 (en) | 2016-06-16 |
US9217932B2 (en) | 2015-12-22 |
JP4833211B2 (ja) | 2011-12-07 |
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