JP2008223102A - Vapor deposition apparatus and vapor deposition method - Google Patents

Abstract

To provide a vapor deposition apparatus and a vapor deposition method capable of reducing vapor deposition material deposited on a substrate other than the substrate to be processed and easily collecting and reusing the vapor deposition material deposited on the substrate other than the substrate to be processed.
In a vacuum deposition apparatus 100, a vapor flow release comprising a blocking wall 171 surrounding the opening direction of a vapor outlet 12a in a vapor deposition source 12 and a through hole opened at a position facing the vapor outlet 12a in the blocking wall 171. Vapor deposition is performed in a state where the vapor deposition material recovery tool 17 provided with the outlet 170 is disposed so as to cover the vapor outlet 12a. The inner surface of the blocking wall 171 is a concave spherical surface, and a vapor flow discharge port 170 is formed at the zenith portion. After the vacuum deposition, the vapor deposition material recovery tool 17 is taken out from the vapor deposition chamber 11, and the vapor deposition material deposited on the blocking wall 171 is recovered and reused.
[Selection] Figure 2

Description

  The present invention relates to a vapor deposition apparatus and a vapor deposition method for heating a vapor deposition material and supplying a vapor flow of the vapor deposition material toward a substrate to be processed.

  In the vacuum vapor deposition method, a vapor deposition material is vaporized by heating a vapor deposition source loaded with the vapor deposition material, and a vapor flow composed of molecules and atoms of the vapor deposition material generated thereby is supplied to a substrate to be processed. In such an apparatus for performing vacuum vapor deposition, as shown in FIG. 5, the vapor flow emitted from the vapor deposition source 12 is released over a wide range in the vapor deposition chamber 11 in accordance with the so-called cos rule. For this reason, the vapor flow not only reaches the substrate to be processed 20 but also reaches the deposition preventing plate 16 provided on the inner wall of the vapor deposition chamber 11. Therefore, the maintenance of the inside of the vapor deposition chamber 11 and the deposition prevention plate 16 needs to be frequently performed.

In order to suppress wasteful consumption of the vapor deposition material, it is desirable to collect and reuse the vapor deposition material deposited in a place other than the substrate 20 to be processed. Therefore, a method has been proposed in which the vapor deposition material adhering to the cell shutter is heated and evaporated, and the vaporized vapor deposition material is cooled and collected on the shroud surface by a shroud arranged along the inner wall of the vapor deposition chamber. (See Patent Document 1).
Japanese Patent Laid-Open No. 10-168559

  However, when it is attempted to collect the vapor deposition material by employing the configuration described in Patent Document 1, the configuration in the vapor deposition chamber becomes complicated and the vapor deposition apparatus becomes large.

  However, in the vacuum vapor deposition apparatus 100X described with reference to FIG. 5, in order to recover the vapor deposition material, the deposition plate 16 that is large enough to cover the inner wall of the vapor deposition chamber 11 is removed from the inner wall of the vapor deposition chamber 11. 11 is required to be taken out from the outside, which takes a lot of time and effort. In addition, when different types of vapor deposition materials are used in the vapor deposition chamber 11, a plurality of vapor deposition materials adhere to the deposition preventing plate 16, so that the purity of the collected vapor deposition materials is low and cannot be reused. .

  In view of the above problems, an object of the present invention is to reduce a vapor deposition material deposited on a substrate other than the substrate to be processed, and to easily collect and reuse a vapor deposition material deposited on a substrate other than the substrate to be processed, and It is to provide a vapor deposition method.

  In order to solve the above-mentioned problems, in the present invention, a vapor deposition source that releases a vapor flow of a vapor deposition material is provided in a vapor deposition chamber, and vapor deposition is performed on a substrate to be processed using the vapor flow. The vapor deposition material recovery tool is detachably arranged at a position covering the outlet, and the vapor deposition material recovery tool is opposed to the vapor outlet at the barrier wall surrounding the opening direction of the vapor outlet and the barrier wall. And a vapor flow outlet comprising a through hole opened at a position.

  According to the present invention, in a vapor deposition method for supplying a vapor flow of a vapor deposition material released from a vapor deposition source toward a substrate to be processed in a vapor deposition chamber, the barrier wall surrounding the opening direction of the vapor outlet in the vapor deposition source, and the barrier Vapor deposition is performed in a state where a vapor deposition material recovery tool provided with a vapor flow discharge port formed of a through hole opened at a position facing the vapor outlet on the wall is disposed so as to cover the vapor outlet.

  In the present invention, it is preferable that the vapor deposition material attached to the blocking wall is collected after the vapor deposition material recovery tool used for vapor deposition is taken out of the vapor deposition chamber.

  In the present invention, a vapor deposition material recovery tool having a barrier wall surrounding the opening direction of the vapor outlet in the vapor deposition source and a vapor flow discharge port that opens at a position facing the vapor outlet is disposed so as to cover the vapor outlet. Therefore, only the vapor flow that has passed through the vapor flow discharge port out of the vapor flow emitted from the vapor outlet is supplied toward the substrate to be processed, and the vapor flow toward the barrier wall remains in the vapor deposition material recovery tool, It is not supplied toward the substrate to be processed. Therefore, since the divergence angle of the vapor flow toward the substrate to be processed can be controlled by the distance between the vapor outlet and the vapor flow discharge port and the opening size of the vapor outlet and the vapor flow discharge port, the vapor flow is separated from the substrate to be processed and the vapor deposition chamber It is possible to prevent heading toward a deposition plate provided on the inner wall of the film or the inner wall of the vapor deposition chamber. Therefore, deposition of the vapor deposition material on the inner wall of the vapor deposition chamber or the deposition preventing plate can be prevented or suppressed, so that the vapor deposition apparatus can be easily maintained. Further, of the steam flow discharged from the steam outlet, the steam flow deviating from the direction toward the steam flow discharge port reaches the blocking wall and accumulates. Here, since the vapor deposition material recovery tool is detachably disposed in the vapor deposition chamber, the vapor deposition material recovery tool is taken out of the vapor deposition chamber and the vapor deposition material deposited on the barrier wall of the vapor deposition material recovery tool is recovered. In addition, the collection operation can be performed without much effort. Furthermore, when different types of vapor deposition materials are used in the vapor deposition chamber, if the vapor deposition material recovery tool is changed for each type of vapor deposition material, the vapor deposition material deposited on the barrier wall of the vapor deposition material recovery tool can be recovered and reused. it can. Therefore, the utilization efficiency of the vapor deposition material can be improved.

  In the present invention, it is preferable that an inner surface of the blocking wall has a concave spherical shape that is recessed toward the substrate to be processed, and the vapor flow discharge port is opened at a zenith portion of the blocking wall. If comprised in this way, there exists an advantage that the vapor deposition material deposited on the shielding wall does not peel off carelessly. That is, if the inner surface of the blocking wall has a concave spherical shape, the area of the blocking wall per unit projected area is larger than when the blocking wall is flat at a position facing the vapor outlet of the vapor deposition source. Therefore, even when vapor deposition materials having the same volume are deposited, the deposited layer is difficult to peel off from the blocking wall because the deposited layer is thin. In addition, in the concave spherical surface, the direction in which gravity acts on the deposited layer and the direction of the force for separating the deposited layer (normal direction with respect to the blocking wall) do not coincide with each other. The force that acts to peel off the deposited layer is small. Therefore, it is possible to more reliably prevent the deposited layer from peeling off from the blocking wall, so that the vapor deposition material deposited on the blocking wall can be more reliably and efficiently recovered.

  In this invention, it is preferable that the said vapor deposition material collection | recovery tool is equipped with the heater which heats the opening edge of the said vapor flow discharge port. Further, at the time of vapor deposition, in the vapor deposition material recovery tool, the temperature of the opening edge of the vapor flow discharge port is set to be equal to or higher than the temperature of the vapor flow, and a portion of the barrier wall that is separated from the opening edge of the vapor flow discharge port is It is preferable to set it below the temperature of the flow. If comprised in this way, since vapor deposition material does not accumulate in the opening edge of a vapor flow discharge port, it can prevent a vapor flow discharge port being clogged with vapor deposition material. Moreover, if the temperature of the blocking wall is low, the vapor deposition material can be reliably recovered at the blocking wall.

  Below, with reference to drawings, the vapor deposition apparatus and vapor deposition method to which this invention is applied are demonstrated. In the following embodiments, an organic EL (electroluminescence) device is exemplified as an object to which the vapor deposition device and the vapor deposition method of the present invention are used.

(Configuration example of organic EL device)
FIG. 1 is a cross-sectional view of an essential part of an organic EL device to which the present invention is applied. An organic EL device 1 shown in FIG. 1 is used as a display device or the like, and on the element substrate 2, pixels 3 are configured in a plurality of regions surrounded by a partition wall 9 made of a photosensitive resin. Each of the plurality of pixels 3 includes an organic EL element 3a. The organic EL element 3a injects a pixel electrode 4 made of an ITO (Indium Tin Oxide) film functioning as an anode and holes from the pixel electrode 4 A hole injecting and transporting layer 5 for transporting / transporting, a light emitting layer 6 made of an organic EL material, an electron injecting and transporting layer 7 for injecting / transporting electrons, and a cathode 8 made of aluminum or an aluminum alloy. On the cathode 8 side, a sealing layer and a sealing member (not shown) for preventing the organic EL element 3a from being deteriorated by moisture or oxygen are disposed. On the element substrate 2, a circuit portion 2b including a driving transistor 2a electrically connected to the pixel electrode 4 is formed on the lower layer side of the organic EL element 3a.

  When the organic EL device 1 is a bottom emission method, light emitted from the light emitting layer 6 is emitted from the pixel electrode 4 side, so that the base of the element substrate 2 is glass, quartz, resin (plastic, plastic film) A transparent substrate such as is used. At this time, if the cathode 8 is formed of a light reflecting film, the light emitted from the light emitting layer 6 can be reflected by the cathode 8 and emitted from the transparent substrate side.

  On the other hand, when the organic EL device 1 is a top emission method, the light emitted from the light emitting layer 6 is emitted from the cathode 8 side, and therefore the base of the element substrate 2 does not need to be transparent. However, even when the organic EL device 1 is a top emission type, a light is emitted from the light emitting layer 6 by disposing a reflective layer (not shown) on the surface opposite to the light emitting side with respect to the element substrate 2. Is emitted from the cathode 8 side, it is necessary to use a transparent substrate as the base of the element substrate 2. When the organic EL device 1 is a top emission method, a light emitting layer 6 emits light by forming a reflective layer between the base of the element substrate 2 and the light emitting layer 6, for example, on the lower layer side of the pixel electrode 4. When the emitted light is emitted from the cathode 8 side, the base of the element substrate 2 does not have to be transparent.

  When the organic EL device 1 is a top emission method, the cathode 8 is formed thin. For this reason, an auxiliary wiring 8 a made of aluminum or an aluminum alloy may be formed on the upper surface of the partition wall 9 in order to compensate for an increase in electric resistance of the cathode 8.

  When the organic EL device 1 is used as a color display device, the plurality of pixels 3 and the organic EL element 3a are each configured as a sub pixel corresponding to red (R), green (G), and blue (B). In that case, in the organic EL element 3a, the light emitting layer 6 is formed of a light emitting material capable of emitting light corresponding to each color. In addition, since it is often difficult to obtain the characteristics of each RGB color by the light emitting layer 6 made of a single light emitting material, the light emitting layer 6 in which the host material is doped with a fluorescent dye is formed, and the luminescence from the fluorescent dye is emitted. It may be taken out as Examples of such a combination of the host material and the dopant material include a combination of tris (8-quinolylato) aluminum and a coumarin derivative, a combination of an anthracene derivative and a styrylamine derivative, a combination of an anthracene derivative and a naphthacene derivative, and tris ( 8-quinolylate) A combination of aluminum and a dicyanopyran derivative, a combination of a naphthacene derivative and diindenoperylene, and the like.

  In forming the element substrate 2, in addition to the method of performing the following steps on a single-size substrate, the following steps are performed on a large substrate on which a large number of element substrates 2 can be obtained, and then the single-size element substrate 2 is formed. A method of cutting is employed, but in the following description, the substrate 20 is referred to regardless of size.

  In order to manufacture the organic EL device 1, each layer is formed on the substrate to be processed 20 by using a semiconductor process such as a film forming process or a patterning process using a resist mask. However, the hole injecting and transporting layer 5, the light emitting layer 6, the electron injecting and transporting layer 7, and the like made of a low molecular material are easily deteriorated by moisture and oxygen. 7, and further, when forming the auxiliary wiring 8 a and the cathode 8 in the upper layer of the electron injection transport layer 7, if a patterning process using a resist mask is performed, the resist mask is etched with an etching solution, oxygen plasma, or the like. At the time of removal, the hole injecting and transporting layer 5, the light emitting layer 6, and the electron injecting and transporting layer 7 are deteriorated by moisture and oxygen. Therefore, in this embodiment, when forming the hole injecting and transporting layer 5, the light emitting layer 6, and the electron injecting and transporting layer 7, and when forming the auxiliary wiring 8a and the cathode 8, the vapor deposition apparatus described below is used. The mask deposition is performed, and the patterning process using the resist mask is not performed.

(Overall configuration of vapor deposition equipment)
FIG. 2 is a schematic configuration diagram showing a configuration of a vapor deposition apparatus to which the present invention is applied. As shown in FIG. 2, the vacuum deposition apparatus 100 (deposition apparatus) of this embodiment has a deposition chamber 11 in which the inside is evacuated, and an adhesion preventing plate 16 is disposed along the inner wall of the deposition chamber 11. Has been. A substrate holder 19 for holding the substrate to be processed 20 and the vapor deposition mask member 30 is disposed at an upper position in the vapor deposition chamber 11, and the vapor deposition mask member 30 is disposed on the lower surface side of the substrate to be processed 20 (film formation). It is in a state of being overlaid at a predetermined position on the surface side. Although the configuration of the vapor deposition mask member 30 will be described later with reference to FIGS. 3A and 3B, a plurality of mask openings 310 corresponding to the vapor deposition pattern for the substrate 20 to be processed are formed.

  A vapor deposition source 12 that supplies a vapor flow made of vapor deposition particles such as vapor deposition molecules and vapor atoms toward the substrate 20 to be processed is disposed at a lower position in the vapor deposition chamber 11. The vapor deposition source 12 includes a crucible 14 loaded with a vapor deposition material, and a heating device 13 for heating the vapor deposition material in the crucible 14. The heating device 13 includes a bottomed cylindrical heat block 131 provided with a recess 133 in which the entire crucible 14 can be mounted, and a heating element 132 such as a heating wire disposed in the heat block 131. The power supply to the heating element 132 is controlled while monitoring the temperature of the heat block 131 or the crucible 14 with a thermocouple or the like. The heating device 13 is disposed in a recess 111 formed at the bottom of the vapor deposition chamber 11 with the crucible 14 held in the heat block 131.

  Further, in this embodiment, a cup-shaped vapor deposition material recovery tool 17 is disposed downward so as to cover the periphery of the vapor outlet 12 a (the opening of the crucible 14) of the vapor deposition source 12. A steam flow outlet 170 is formed at a position facing the 12 steam outlets 12a. Therefore, in this embodiment, the cell shutter 15 that opens and closes the vapor flow discharge port 170 is disposed with respect to the vapor deposition material recovery tool 17. In addition, the detailed structure of the vapor deposition material collection | recovery tool 17 is later mentioned with reference to FIG.

(Configuration of evaporation mask 31)
3A and 3B are explanatory views of a vapor deposition mask. Of the vapor deposition mask members 30A and 30B shown in FIGS. 3A and 3B, the vapor deposition mask member 30A shown in FIG. 3A has a rectangular thin plate shape with a thickness of about 0.25 to 0.5 mm. The vapor deposition mask 31 is attached to a rectangular frame 33. The vapor deposition mask 31 and the frame 33 are each made of a metal material (for example, stainless steel, invar, 42 alloy, nickel alloy, etc.), glass, ceramics, silicon, etc., and the vapor deposition mask 31 is preferably made of silicon. The vapor deposition mask 31 has a plurality of mask openings 310 corresponding to vapor deposition patterns formed on the substrate to be processed 20 formed in parallel and at regular intervals. The frame 33 is disposed between the support substrate 34 in which the opening region 340 having substantially the same size as the vapor deposition mask 31 is formed, and the mask opening 310 of the vapor deposition mask 31, and between the mask openings 310. A beam portion 35 to be supported, and a fixing member 36 for fixing the beam portion 35 to the support substrate 34 by applying a longitudinal tension to the beam portion 35 are provided. The beam portion 35 is disposed along the longitudinal direction of the mask opening portion 310 between the mask opening portions 310 and has a narrower width dimension than a region sandwiched between the mask opening portions 310. The beam portion 35 is made of a metal material (for example, stainless steel, invar, 42 alloy, nickel alloy), glass, ceramics, silicon, SUS430, or the like.

  The vapor deposition mask member 30B shown in FIG. 3B has a configuration in which a plurality of chip-shaped vapor deposition masks 31 are attached to a support substrate 37 that forms a base substrate. Aligned and bonded to the support substrate 37 by a method such as anodic bonding or adhesive. The support substrate 37 is provided with a plurality of opening regions 370 in parallel and at regular intervals. Each of the plurality of vapor deposition masks 31 is fixed on the support substrate 37 so as to close the opening region 370. The vapor deposition mask 31 is provided with a plurality of long-hole-shaped mask openings 310 corresponding to the vapor deposition pattern for the substrate 20 to be processed in parallel at regular intervals. The evaporation mask 31 is made of single crystal silicon having a plane orientation (100), single crystal silicon having a plane orientation (110), or the like, and the mask opening 310 is formed by a photolithography technique or an organic material such as tetramethyl aluminum oxide. It is formed by a wet etching technique using an alkaline aqueous solution such as an inorganic hydroxide such as a potassium hydroxide or potassium hydroxide or sodium hydroxide. As the support substrate 37, a transparent substrate made of alkali-free glass, borosilicate glass, soda glass, quartz, or the like is used.

(Detailed configuration of vapor deposition equipment)
4A and 4B are a perspective view and a cross-sectional view, respectively, of a vapor deposition material recovery tool used in a vapor deposition apparatus to which the present invention is applied. As shown in FIGS. 2, 4 (a), and 4 (b), in the vapor deposition apparatus 100 of the present invention, the cup-shaped vapor deposition material recovery tool 17 is attached to the lower surface of the vapor deposition chamber 11 so as to cover the vapor outlet 12 a of the crucible 14. Vacuum deposition is performed in the state of being arranged in the above. Here, the vapor deposition material collection | recovery tool 17 exists in the state mounted in the predetermined position of the lower surface of the vapor deposition chamber 11, and can be attached or detached easily. The vapor deposition material recovery tool 17 is made of metal, ceramics, or heat-resistant resin, and in any case, is made of a material that can withstand the vapor flow temperature.

  The vapor deposition material recovery tool 17 is disposed so as to cover the vapor outlet 12a of the crucible 14, and has a blocking wall 171 surrounding the opening direction of the vapor outlet 12a, and an opening at a position facing the vapor outlet 12a in the blocking wall 171. And a steam flow outlet 170 formed of a through hole. In this embodiment, the blocking wall 171 is formed of a concave spherical surface, and has a diameter that increases from the substrate 20 side to the lower surface side of the vapor deposition chamber 11. The vapor flow discharge port 170 is formed at the top of the blocking wall 171 and has a diameter that increases from the deposition source 12 side toward the substrate to be processed 20 side.

(Film formation method and vapor deposition material recovery method)
In the vacuum vapor deposition apparatus 100 of this embodiment, the vapor flow discharge port 170 of the vapor deposition material recovery tool 17 is blocked by the cell shutter 15 while the vapor deposition material in the vapor deposition source 12 is heated to a predetermined temperature. . Next, the cell shutter 15 is driven at a desired timing to open the vapor flow discharge port 170, and the vapor flow discharged from the vapor outlet 12 a of the crucible 14 is covered with the vapor flow discharge port 170 of the deposition material recovery tool 17. It supplies toward the process board | substrate 20, and performs vacuum evaporation to the to-be-processed substrate 20. FIG. When the desired film formation is completed on the substrate 20 to be processed, the cell shutter 15 is driven to close the vapor flow outlet 170 and stop the vacuum deposition.

  At that time, the divergence angle of the steam flow toward the substrate to be processed 20 can be controlled by the distance between the steam outlet 12a and the steam flow outlet 170 and the opening dimensions of the steam outlet 12a and the steam flow outlet 170. That is, as shown by the arrow V1 in FIGS. 2 and 4B, only the vapor flow toward the vapor flow discharge port 170 of the vapor deposition material recovery tool 17 out of the vapor flow discharged from the vapor deposition source 12 is processed substrate 20. Therefore, most of the vapor flow discharged from the vapor flow discharge port 170 reaches the substrate 20 to be processed.

  Here, although the vapor deposition material collection | recovery tool 17 is heated with the radiant heat from the vapor deposition source 12, it is lower than the temperature of a vapor flow. For this reason, among the vapor flows emitted from the vapor deposition source 12, the vapor flow deviated from the direction toward the vapor flow discharge port 170 is a barrier wall of the vapor deposition material recovery tool 17, as indicated by an arrow V2 in FIG. It goes to 171 and deposits on the blocking wall 171.

  When the above vacuum evaporation is repeated, the evaporation material is deposited on the blocking wall 171 of the evaporation material recovery tool 17. Therefore, in this embodiment, after the vapor deposition material recovery tool 17 is taken out of the vapor deposition chamber 11, the vapor deposition material deposited on the blocking wall 171 is evaporated and vaporized by a method such as heating the vapor deposition material recovery tool 17. Thereafter, the vapor deposition material is cooled and recovered.

(Effect of this embodiment)
As described above, in this embodiment, the vapor flow outlet port 170 that opens at a position facing the barrier wall 171 and the steam outlet 12a surrounding the opening direction of the steam outlet 12a (opening portion of the crucible 14) in the vapor deposition source 12 is provided. The provided vapor deposition material recovery tool 17 is disposed so as to cover the vapor outlet 12a and vapor deposition is performed. For this reason, only the vapor flow that has passed through the vapor flow discharge port 170 out of the vapor flow discharged from the vapor outlet 12 a is supplied toward the substrate to be processed 20, and the vapor flow toward the blocking wall 171 is the vapor deposition material recovery tool 17. It stays inside and is not supplied toward the substrate 20 to be processed. Therefore, the divergence angle of the steam flow toward the substrate to be processed 20 can be controlled by the distance between the steam outlet 12a and the steam flow outlet 170 and the opening size of the steam outlet 12a and the steam flow outlet 170. It is possible to prevent the substrate from being removed from the processing substrate 20 toward the inner wall of the vapor deposition chamber 11 or the deposition preventing plate 16. Therefore, the deposition of the vapor deposition material on the inner wall of the vapor deposition chamber 11 and the deposition preventing plate 16 can be prevented or suppressed, so that the vacuum vapor deposition apparatus 100 can be easily maintained.

  Further, of the vapor flow emitted from the vapor deposition source 12, the vapor flow deviated from the direction toward the vapor flow discharge port 170 is directed to the blocking wall 171 of the vapor deposition material recovery tool 17 and deposited on the blocking wall 171. Therefore, the steam flow is not discharged from the steam flow outlet 170 in vain. Here, since the vapor deposition material recovery tool 17 is detachably disposed in the vapor deposition chamber 11, the vapor deposition material recovery tool 17 is taken out of the vapor deposition chamber 11 and deposited on the blocking wall 171 of the vapor deposition material recovery tool 17. The deposited material can be collected and the collecting operation can be easily performed.

  Further, even when different types of vapor deposition materials are used in the vapor deposition chamber 11, if the vapor deposition material recovery tool 17 is changed for each type of vapor deposition material, the vapor deposition material deposited on the blocking wall 171 of the vapor deposition material recovery tool 17 is recovered. It can be reused. Therefore, the utilization efficiency of the vapor deposition material can be improved.

  Furthermore, since the inner surface of the blocking wall 171 has a concave spherical shape that is recessed toward the substrate to be processed 20, the blocking wall 171 is flat at a position facing the vapor outlet 12 a of the vapor deposition source 12. Compared to the case, the area of the blocking wall 171 per unit projected area is large. Therefore, even when vapor deposition materials having the same volume are deposited, the deposited layer is difficult to peel off from the blocking wall 171 because the deposited layer is thin. Further, in the concave spherical surface, the direction in which gravity acts on the deposited layer and the direction of the force for separating the deposited layer (normal direction with respect to the blocking wall 171) do not coincide with each other. The force by which the self-weight acts to separate the deposited layer from the blocking wall 171 is small. Accordingly, it is possible to more reliably prevent the deposited layer from peeling off from the blocking wall 171, so that the vapor deposition material deposited on the blocking wall 171 can be recovered more reliably and efficiently.

(Improvement example)
In the said form, since the vapor deposition material collection | recovery tool 17 was heated only with the radiant heat from the vapor deposition source 12, the temperature of the vapor deposition material collection | recovery tool 17 existed in the state lower than the temperature of a vapor flow, For example, FIG. As indicated by a one-dot chain line in (a), a heater 176 may be built around the vapor flow discharge port 170 in the vapor deposition material recovery tool 17. With this configuration, during vapor deposition, the vapor deposition material recovery tool 17 can set the temperature of the opening edge 170a of the vapor flow discharge port 170 to be equal to or higher than the temperature of the vapor flow, and the vapor deposition material at the opening edge 170a of the vapor flow discharge port 170. Is cooled to prevent the vapor flow outlet 170 from being clogged with deposits of vapor deposition material. In this case, the vapor deposition material can be reliably recovered at the blocking wall 171 by maintaining a portion of the blocking wall 171 spaced from the opening edge 170a of the vapor flow outlet 170 below the temperature of the vapor flow. When the heater 176 is built around the vapor flow outlet 170 in the vapor deposition material recovery tool 17, a power supply terminal for the heater 176 and the like is provided at the lower end of the vapor deposition material recovery tool 17, and the heater 176 is connected to the heater 176 from the lower surface of the vapor deposition chamber 11. A configuration for supplying power may be employed. In order to maintain the portion of the blocking wall 171 spaced from the opening edge 170a of the steam flow outlet 170 below the temperature of the steam flow, for example, a pipe line is provided inside the portion of the steam flow outlet 170 spaced from the opening edge 170a. It is also possible to adopt a configuration in which a medium such as cooling air is passed through the pipe.

[Other embodiments]
In the above embodiment, the case where vapor deposition is performed using one type of vapor deposition material has been illustrated. However, when plural types of thin films are stacked on the substrate 20 to be processed using a plurality of different vapor deposition materials, the vapor deposition source 12 is loaded. Each time the type of vapor deposition material to be changed changes, the vapor deposition material recovery tool 17 is replaced with another new vapor deposition material recovery tool. Thereby, a plurality of vapor deposition materials can be prevented from being deposited on the blocking wall 171 of one vapor deposition material recovery tool 17, and each of the plurality of vapor deposition materials can be individually recovered. Therefore, a plurality of vapor deposition materials can be efficiently recovered. Further, when a plurality of deposition sources 12 loaded with different types of deposition materials are arranged in the deposition chamber 11 and a plurality of types of thin films are stacked on the substrate 20 to be processed, each of the plurality of deposition sources 12 is used. The vapor deposition material recovery tool 17 may be disposed.

  Moreover, although the case where this invention is applied when performing mask vapor deposition was illustrated in the said form, you may apply this invention when forming into a film on the substantially whole surface of a to-be-processed substrate.

It is principal part sectional drawing of the organic electroluminescent apparatus with which this invention is applied. It is a schematic block diagram of the vapor deposition apparatus to which this invention is applied. (A), (b) is explanatory drawing of the mask for vapor deposition. (A), (b) is respectively the perspective view and sectional drawing of the vapor deposition material collection | recovery tool used for the vapor deposition apparatus to which this invention is applied. It is a block diagram of the conventional vapor deposition apparatus.

Explanation of symbols

1 .... Organic EL device 2 .... Element substrate 3 .... Organic EL element 11 .... Vapor deposition chamber 12 .... Vapor deposition source 12a ... Vapor outlet of vapor deposition source 14, ... Crucible 16, ... Deposition plate, 17 ... Vapor deposition material recovery tool, 20 ... Substrate to be processed, 100 ... Vacuum vapor deposition device (vapor deposition device), 170 ... Vapor flow outlet, 171 ...

Claims (6)

In a vapor deposition apparatus that includes a vapor deposition source that discharges a vapor flow of a vapor deposition material in a vapor deposition chamber and performs vapor deposition on a substrate to be processed using the vapor flow.
A vapor deposition material recovery tool detachably disposed at a position covering the vapor outlet of the vapor deposition source;
The vapor deposition material recovery tool includes a blocking wall that surrounds the opening direction of the vapor outlet, and a vapor flow discharge port that includes a through hole that opens at a position facing the vapor outlet in the blocking wall. Vapor deposition equipment. The inner surface of the blocking wall has a concave spherical shape that is recessed toward the substrate to be processed.
The vapor deposition apparatus according to claim 1, wherein the vapor flow discharge port is opened at a zenith portion of the blocking wall.   The said vapor deposition material collection | recovery tool is equipped with the heater which heats the opening edge of the said vapor flow discharge port, The vapor deposition apparatus of Claim 1 or 2 characterized by the above-mentioned. In a vapor deposition method for supplying a vapor flow of a vapor deposition material released from a vapor deposition source toward a substrate to be processed in a vapor deposition chamber,
A vapor deposition material recovery tool comprising: a barrier wall surrounding the opening direction of the vapor outlet in the vapor deposition source; and a vapor flow discharge port including a through hole opening at a position facing the vapor outlet in the barrier wall. The vapor deposition method characterized by performing vapor deposition in the state arrange | positioned so that it may cover.   At the time of vapor deposition, the temperature of the opening edge of the vapor flow discharge port in the vapor deposition material recovery tool is set to be equal to or higher than the temperature of the vapor flow, and a portion of the barrier wall spaced from the opening edge of the vapor flow discharge port is It sets to less than temperature, The vapor deposition method of Claim 4 characterized by the above-mentioned.   The vapor deposition method according to claim 4 or 5, wherein the vapor deposition material attached to the blocking wall is collected after the vapor deposition material recovery tool used for vapor deposition is taken out of the vapor deposition chamber.

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