JP2008191574A - Positive photosensitive resin composition, cured film, protective film, insulating film, and semiconductor device and display device using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a positive photosensitive resin composition excellent in adhesion to a substrate in a development step and after moisture treatment and in storage stability, a cured film composed of a cured product of the positive photosensitive resin composition, a protective film and an insulating film composed of the cured film, a semiconductor device and a display device. <P>SOLUTION: The positive photosensitive resin composition comprises an alkali-soluble resin (A), a photosensitive diazonaphthoquinone compound (B) and a silicon compound (C-1) represented by general formula (1). <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

The present invention relates to a positive photosensitive resin composition, a cured film, a protective film, an insulating film, a semiconductor device using the same, and a display device.

Conventionally, a polyimide resin having excellent heat resistance and excellent electrical characteristics and mechanical characteristics has been used for a surface protective film and an interlayer insulating film which are semiconductor devices. Recently, however, polybenzoxazole resin, which is considered to have good moisture resistance reliability since there is no carbonyl group derived from a highly polar imide ring, has begun to be used. By providing photosensitivity to the resin itself, a relief pattern forming process A photosensitive resin composition that can simplify a part of the above has been developed.
At present, a positive photosensitive resin composition composed of a polybenzoxazole precursor that can be developed with an alkaline aqueous solution and a diazoquinone compound that is a photosensitizer has been developed by further improvement in terms of safety ( Patent Document 1). Here, the production of the relief pattern of the positive photosensitive resin composition will be described from the development mechanism. By exposing (exposing) the actinic radiation to the coating film on the wafer from above the mask with an exposure device called a stepper, an exposed part (hereinafter referred to as an exposed part) and an unexposed part (hereinafter referred to as an unexposed part). I can do it. The diazoquinone compound present in the unexposed area is insoluble in the alkaline aqueous solution, and is further resistant to the alkaline aqueous solution by interacting with the resin. On the other hand, the diazoquinone compound present in the exposed area undergoes a chemical change by the action of actinic radiation, becomes soluble in an alkaline aqueous solution, and promotes dissolution of the resin. By utilizing the difference in solubility between the exposed portion and the unexposed portion to dissolve and remove the exposed portion, a relief pattern of only the unexposed portion can be produced.

  2. Description of the Related Art In recent years, semiconductor devices have advanced rapidly, and there is a demand for semiconductor devices that simultaneously satisfy the conditions of “fast, small, cheap, and low power consumption” as market needs. Therefore, miniaturization of the semiconductor elements constituting the semiconductor device is essential, and miniaturization of the relief pattern inside the elements is also progressing. Therefore, the contact area between the coating film and the substrate is narrower than before, and in the photosensitive resin composition disclosed in Patent Document 1, a fine relief pattern is peeled off from the substrate in the development process, Moreover, there existed a problem that a cured film might peel off after humidity processing.

Japanese Examined Patent Publication No. 1-46862

  The present invention has been made in view of the above circumstances, and its object is to provide a positive photosensitive resin composition and a cured film that are excellent in adhesion to a substrate after development and humidity treatment, and storage stability. A protective film, an insulating film, a semiconductor device using the protective film, and a display device are provided.

（式（１）中、Ｒ_１、Ｒ_２、Ｒ_３、Ｒ_４は有機基である。ｉは１〜３、ｊは０〜２、ｋは０〜２、ｌは１〜４の整数である。）
［２］前記アルカリ可溶性樹脂（Ａ）が少なくとも１種のジアミンと、カルボン酸誘導体とを反応して得られるポリアミド系樹脂を含む［１］記載のポジ型感光性樹脂組成物。
［３］前記アルカリ可溶性樹脂（Ａ）が一般式（２）で表される繰り返し単位を有するポリアミド系樹脂を含むものである［１］記載のポジ型感光性樹脂組成物。

（式中、Ｘ、Ｙは有機基である。Ｒ_５は水酸基、−Ｏ−Ｒ_７、アルキル基、アシルオキシ基、シクロアルキル基であり、同一でも異なっても良い。Ｒ_６は水酸基、カルボキシル基、−Ｏ−Ｒ_７、−ＣＯＯ−Ｒ_７のいずれかであり、同一でも異なっても良い。ｍは０〜８の整数、ｎは０〜８の整数である。Ｒ_７は炭素数１〜１５の有機基である。ここで、Ｒ_５が複数ある場合は、それぞれ異なっていても同じでもよい。Ｒ_５として水酸基がない場合は、Ｒ_６は少なくとも１つはカルボキシル基でなければならない。また、Ｒ_６としてカルボキシル基がない場合、Ｒ_５は少なくとも１つは水酸基でなければならない。）
［４］前記ケイ素化合物（Ｃ−１）が下記構造である［１］乃至［３］のいずれかに記載のポジ型感光性組成物。

（式中、Ｒ_１、Ｒ_３、Ｒ_４は炭素数１〜１０のアルキル基である。ｉは１〜３、ｊは０〜２、ｌは１〜４の整数である。）
［５］前記ケイ素化合物（Ｃ−１）が下記構造である［１］乃至［４］記載のポジ型感光性樹脂組成物。

（式中、Ｒ_１はメチル基又はエチル基、Ｒ_３アルキル基である。ｌは１〜４の整数である。）
［６］前記アルカリ可溶性樹脂（Ａ）１００重量部に対して、一般式（１）で示されるケ
イ素化合物（Ｃ−１）を０．１〜２０重量部含むものである［１］乃至［５］のいずれかに記載のポジ型感光性樹脂組成物。
［７］ポジ型感光性樹脂組成物が、更に一般式（５）及び／又は（６）で示されるケイ素化合物（Ｃ−２）を含んでなる［１］乃至［６］のいずれかに記載のポジ型感光性樹脂組成物。

（式中、Ｒ_８、Ｒ_９、Ｒ_１０、Ｒ_１１は有機基であり、互いに独立であり、同じでも異なっていても良い。ｐは０〜２の整数である。）

（式中、Ｒ_１２、Ｒ_１３、Ｒ_１４、Ｒ_１５は有機基であり、互いに独立であり、同じでも異なっていても良い。ｑは０〜２の整数である。）
［８］前記アルカリ可溶性樹脂（Ａ）１００重量部に対して、一般式（５）及び／又は（６）で示されるケイ素化合物（Ｃ−２）を０．１〜１０重量部含むものである［７］に記載のポジ型感光性樹脂組成物。
［９］一般式（１）で示されるケイ素化合物（Ｃ−１）の添加量をＸ１、一般式（５）及び／又は（６）で示されるケイ素化合物（Ｃ−２）の添加量をＸ２とした時、（Ｘ１）／（Ｘ２）＝１〜２０を満たす［７］又は［８］に記載のポジ型感光性樹脂組成物。
［１０］［１］乃至［９］に記載のポジ型感光性樹脂組成物の硬化物で構成されていることを特徴とする硬化膜。
［１１］［１０］に記載の硬化膜で構成されていることを特徴とする保護膜。
［１２］［１０］に記載の硬化膜で構成されていることを特徴とする絶縁膜。
［１３］［１０］に記載の硬化膜を有していることを特徴とする半導体装置。
［１４］［１０］に記載の硬化膜を有していることを特徴とする表示体装置。 Such an object is achieved by the present invention described in the following [1] to [13].
[1] A positive photosensitive resin composition comprising an alkali-soluble resin (A), a photosensitive diazoquinone compound (B), and a silicon compound (C-1) represented by the general formula (1).

(In the formula _{(1), R 1, R} 2, R 3, R 4 is an organic radical .i is 1 to 3, j is 0 to 2, k is 0 to 2, l is an integer of from 1 to 4 is there.)
[2] The positive photosensitive resin composition according to [1], wherein the alkali-soluble resin (A) includes a polyamide-based resin obtained by reacting at least one diamine with a carboxylic acid derivative.
[3] The positive photosensitive resin composition according to [1], wherein the alkali-soluble resin (A) includes a polyamide-based resin having a repeating unit represented by the general formula (2).

(In the formula, X and Y are organic groups. R ₅ is a hydroxyl group, —O—R ₇ , an alkyl group, an acyloxy group, or a cycloalkyl group, which may be the same or different. R ₆ is a hydroxyl group or a carboxyl group. , —O—R ₇ , —COO—R ₇ , which may be the same or different, m is an integer of 0 to 8, n is an integer of 0 to 8. R ₇ is an integer of 1 to Here, when there are a plurality of R _{5 s} , they may be different or the same, and when R ₅ has no hydroxyl group, at least one R ₆ must be a carboxyl group. In addition, when there is no carboxyl group as R ₆ , at least one R ₅ must be a hydroxyl group.
[4] The positive photosensitive composition according to any one of [1] to [3], wherein the silicon compound (C-1) has the following structure.

(In the formula, R ₁ , R ₃ , and R ₄ are alkyl groups having 1 to 10 carbon atoms. I is 1 to 3, j is 0 to 2, and l is an integer of 1 to 4.)
[5] The positive photosensitive resin composition according to [1] to [4], wherein the silicon compound (C-1) has the following structure.

(In the formula, R ₁ is a methyl group or an ethyl group, and an R ₃ alkyl group. L is an integer of 1 to 4.)
[6] Of [1] to [5], containing 0.1 to 20 parts by weight of the silicon compound (C-1) represented by the general formula (1) with respect to 100 parts by weight of the alkali-soluble resin (A). The positive photosensitive resin composition according to any one of the above.
[7] The positive photosensitive resin composition according to any one of [1] to [6], further comprising a silicon compound (C-2) represented by the general formula (5) and / or (6). A positive photosensitive resin composition.

(In formula, R < ₈ >, R < ₉ >, R < ₁₀ >, R < ₁₁ > are organic groups, are mutually independent, and may be the same or different. P is an integer of 0-2.)

_{(Wherein, R 12, R 13, R} 14, R 15 is an organic group, independent of each other, may be the same or different .q is an integer of 0 to 2.)
[8] 0.1 to 10 parts by weight of the silicon compound (C-2) represented by the general formula (5) and / or (6) with respect to 100 parts by weight of the alkali-soluble resin (A) [7 ] The positive photosensitive resin composition of description.
[9] The addition amount of the silicon compound (C-1) represented by the general formula (1) is X1, and the addition amount of the silicon compound (C-2) represented by the general formula (5) and / or (6) is X2. The positive photosensitive resin composition according to [7] or [8], wherein (X1) / (X2) = 1 to 20 is satisfied.
[10] A cured film comprising a cured product of the positive photosensitive resin composition according to [1] to [9].
[11] A protective film comprising the cured film according to [10].
[12] An insulating film comprising the cured film according to [10].
[13] A semiconductor device comprising the cured film according to [10].
[14] A display device comprising the cured film according to [10].

  ADVANTAGE OF THE INVENTION According to this invention, the positive photosensitive resin composition excellent in adhesiveness with the board | substrate after a image development process and a humidity process, and storage stability is provided.

Hereinafter, preferred embodiments of the positive photosensitive resin composition, cured film, protective film, insulating film, semiconductor device, and display device of the present invention will be described in detail.
The positive photosensitive resin composition of the present invention contains an alkali-soluble resin (A), a photosensitive diazoquinone compound (B), and a silicon compound (C-1) represented by the following general formula (1). The present invention relates to a characteristic positive photosensitive resin composition.

（式中、Ｒ_１、Ｒ₂、Ｒ_３、Ｒ_４は有機基である。ｉは１〜３、ｊは０〜２、ｋは０〜２
、ｌは１〜４の整数である。）

_{(Wherein, R 1, R 2, R} 3, R 4 is .i 1-3 organic group, j is 0 to 2, k is 0 to 2
, L is an integer from 1 to 4. )

The present invention relates to a positive photosensitive resin composition comprising 0.1 to 20 parts by weight of a silicon compound (C-1) with respect to 100 parts by weight of the alkali-soluble resin (A).
Furthermore, it is related with the positive photosensitive composition characterized by using together the silicon compound (C-2) shown by General formula (5) and / or (6).

（式中、Ｒ_８、Ｒ_９、Ｒ_１０、Ｒ_１１は有機基であり、互いに独立であり、同じでも異なっていても良い。ｐは０〜２の整数である。）

(In formula, R < ₈ >, R < ₉ >, R < ₁₀ >, R < ₁₁ > are organic groups, are mutually independent, and may be the same or different. P is an integer of 0-2.)

（式中、Ｒ_１２、Ｒ_１３、Ｒ_１４、Ｒ_１５は有機基であり、互いに独立であり、同じでも異なっていても良い。ｑは０〜２の整数である。）

_{(Wherein, R 12, R 13, R} 14, R 15 is an organic group, independent of each other, may be the same or different .q is an integer of 0 to 2.)

When the addition amount of the silicon compound (C-1) is X1, and the addition amount of the silicon compound (C-2) is X2, (X1) / (X2) = 1 to 20 is satisfied.
Moreover, the cured film of this invention is comprised with the hardened | cured material of the said photosensitive resin composition, It is characterized by the above-mentioned. In addition, the protective film and the insulating film of the present invention are formed of the cured film described above. Further, the semiconductor device and the display device have the cured film described above.
Hereinafter, each component of the positive photosensitive resin composition of the present invention will be described in detail. The following is an example, and the present invention is not limited to the following.

Examples of the alkali-soluble resin (A) used in the present invention include acrylic resins such as cresol type novolak resins, hydroxystyrene resins, methacrylic acid resins, and methacrylic ester resins, cyclic olefin resins containing hydroxyl groups, carboxyl groups, and polyamides. Based resins and the like. Among these, polyamide resins are preferred from the viewpoint of excellent heat resistance and good mechanical properties. Specifically, they have at least one of a polybenzoxazole structure and a polyimide structure, and have hydroxyl groups or carboxyl groups in the main chain or side chain. , A resin having an ether group or an ester group, a resin having a polybenzoxazole precursor structure, a resin having a polyimide precursor structure, a resin having a polyamic acid ester structure, and the like. Examples of such a polyamide resin include a polyamide resin represented by the following formula (2).

（式中、Ｘ、Ｙは有機基である。Ｒ_５は水酸基、−Ｏ−Ｒ_７、アルキル基、アシルオキシ基、シクロアルキル基であり、同一でも異なっても良い。Ｒ_６は水酸基、カルボキシル基、−Ｏ−Ｒ_７、−ＣＯＯ−Ｒ_７のいずれかであり、同一でも異なっても良い。ｍは０〜８の整数、ｎは０〜８の整数である。Ｒ_７は炭素数１〜１５の有機基である。ここで、Ｒ_５が複数ある場合は、それぞれ異なっていても同じでもよい。Ｒ_５として水酸基がない場合は、Ｒ_６は少なくとも１つはカルボキシル基でなければならない。また、Ｒ_６としてカルボキシル基がない場合、Ｒ_５は少なくとも１つは水酸基でなければならない。）

(In the formula, X and Y are organic groups. R ₅ is a hydroxyl group, —O—R ₇ , an alkyl group, an acyloxy group, or a cycloalkyl group, which may be the same or different. R ₆ is a hydroxyl group or a carboxyl group. , —O—R ₇ , —COO—R ₇ , which may be the same or different, m is an integer of 0 to 8, n is an integer of 0 to 8. R ₇ is an integer of 1 to Here, when there are a plurality of R _{5 s} , they may be different or the same, and when R ₅ has no hydroxyl group, at least one R ₆ must be a carboxyl group. In addition, when there is no carboxyl group as R ₆ , at least one R ₅ must be a hydroxyl group.

In the polyamide-based resin represented by the general formula (2), O—R ₇ as a substituent of X, O—R ₇ and COO—R ₇ as a substituent of Y are dissolved in an alkaline aqueous solution of a hydroxyl group and a carboxyl group. For the purpose of adjusting the property, it is a group protected by R ₇ which is an organic group having 1 to 15 carbon atoms, and a hydroxyl group or a carboxyl group may be protected if necessary. Examples of R ₇ include formyl group, methyl group, ethyl group, propyl group, isopropyl group, tertiary butyl group, tertiary butoxycarbonyl group, phenyl group, benzyl group, tetrahydrofuranyl group, tetrahydropyranyl group and the like. It is done.

  The polyamide resin having the structure represented by the general formula (2) is, for example, a compound selected from diamine containing X or bis (aminophenol), 2,4-diaminophenol, and the like, and dicarboxylic acid or dicarboxylic acid containing Y. It is obtained by reacting a compound selected from dichloride, dicarboxylic acid derivatives and the like. In the case of dicarboxylic acid, an active ester type dicarboxylic acid derivative obtained by reacting 1-hydroxy-1,2,3-benzotriazole or the like in advance may be used in order to increase the reaction yield or the like.

  Examples of X in the general formula (2) include aromatic compounds such as a benzene ring and a naphthalene ring, heterocyclic compounds such as bisphenols, pyrroles, and furans, and siloxane compounds. What is shown by Formula (7) can be mentioned preferably. These may be used alone or in combination of two or more.

（ここで＊はＮＨ基に結合することを示す。Ｒ_１８〜Ｒ_２１は有機基である。）

(Here, * indicates bonding to an NH group. R _{18 to} R ₂₁ are organic groups.)

As represented by the general formula (2), 0 to 8 R ₅ are bonded to X (in the formula (7), R ₅ is omitted).

  Particularly preferable examples in the formula (7) include those represented by the following formula (8), which are particularly excellent in heat resistance and mechanical properties.

（式中、＊はＮＨ基に結合することを示す。式中Ｄは、−ＣＨ_２−、−ＣＨ（ＣＨ_３）−、−Ｃ（ＣＨ_３）_２−、−Ｏ−、−Ｓ−、−ＳＯ_２−、−ＣＯ−、−ＮＨＣＯ−、−Ｃ（ＣＦ_３）_２−、又は単結合である。Ｒ_２２は、はアルキル基、アルコキシ基、アシルオキシ基、シクロアルキル基のいずれかであり、同一でも異なっても良い。Ｒ_２３は、アルキル基、アルキルエステル基、ハロゲン原子の内から選ばれた１つを表し、それぞれ同じでも異なっていてもよい。ｓ＝１〜３、ｔ＝０〜２の整数である。）

(In the formula, * indicates bonding to an NH group. In the formula, D represents —CH ₂ —, —CH (CH ₃ ) —, —C (CH ₃ ) ₂ —, —O—, —S—, —SO ₂ —, —CO—, —NHCO—, —C (CF ₃ ) ₂ —, or a single bond, R ₂₂ is an alkyl group, an alkoxy group, an acyloxy group, or a cycloalkyl group. R ₂₃ represents one selected from an alkyl group, an alkyl ester group, and a halogen atom, and may be the same or different, and s = 1 to 3 and t = 0. It is an integer of ~ 2.)

（式中、＊はＮＨ基に結合することを示す。）

(In the formula, * indicates binding to an NH group.)

  When X in the general formula (2) is the above formula (8-4), (8-5), or (8-7), the combination with the silicon compound represented by the formula (C-1) can be Adhesion is further improved.

  Y in the general formula (2) is an organic group, and examples thereof include those similar to X, such as aromatic compounds such as benzene ring and naphthalene ring, bisphenols, pyrroles, pyridines, furans and the like. A heterocyclic compound etc. are mentioned, More specifically, what is shown by following formula (9) can be mentioned preferably. These may be used alone or in combination of two or more.

（ここで＊はＣ＝Ｏ基に結合することを示す。Ｒ_２６〜Ｒ_２９は有機基である。）

(Here, * indicates bonding to a C═O group. R _{26 to} R ₂₉ are organic groups.)

As shown in the general formula (2), 0 to 8 R ₆ are bonded to Y (in the formula (9), R ₆ is omitted).

Among these, particularly preferred are those represented by the following formulas (10) and (11), which are particularly excellent in heat resistance and mechanical properties.
Regarding the structure derived from tetracarboxylic dianhydride in the following formula (10), the position where the C═O group is bonded to both is in the meta position, and both are in the para position. A structure including each of the para positions may be used.

（式中、＊はＣ＝Ｏ基に結合することを示す。Ｒ_３０は、アルキル基、アルキルエステル基、アルキルエーテル基、ベンジルエーテル基、ハロゲン原子の内から選ばれた１つを表し、それぞれ同じでも異なっていてもよい。Ｒ_３１は、水素原子又は炭素数１〜１５の有機基から選ばれた１つを示し、一部が置換されていてもよい。ｖ＝０〜２の整数である。）

(In the formula, * represents bonding to a C═O group. R ₃₀ represents one selected from an alkyl group, an alkyl ester group, an alkyl ether group, a benzyl ether group, and a halogen atom, R ₃₁ represents one selected from a hydrogen atom or an organic group having 1 to 15 carbon atoms and may be partially substituted, and v is an integer of 0 to 2. is there.)

（式中、＊はＣ＝Ｏ基に結合することを示す。）

(In the formula, * indicates binding to a C═O group.)

In addition, the polyamide resin represented by the general formula (2) is an acid containing a terminal amino group, an aliphatic group having at least one alkenyl group or alkynyl group, or a cyclic compound group. It is preferred to cap as an amide with an anhydride. Thereby, preservability can be improved.
Examples of such a group derived from an acid anhydride containing an aliphatic group or cyclic compound group having at least one alkenyl group or alkynyl group after reacting with an amino group include formula (12) and formula (13). ) And the like. These may be used alone or in combination of two or more.

  Among these, a group selected from the formula (14) is particularly preferable. Thereby, especially storability can be improved.

The method is not limited to this method, and the terminal acid contained in the polyamide-based resin is converted into an amide by using an amine derivative containing an aliphatic group or a cyclic compound group having at least one alkenyl group or alkynyl group. It can also be capped.

  The photosensitive diazoquinone compound (B) used in the present invention is, for example, an ester of a phenol compound and 1,2-naphthoquinone-2-diazide-5-sulfonic acid or 1,2-naphthoquinone-2-diazide-4-sulfonic acid. Can be mentioned. Specific examples include ester compounds represented by formula (15) to formula (18). These may be used alone or in combination of two or more.

式中Ｑは、水素原子、式（１９）、式（２０）のいずれかから選ばれるものである。ここで各化合物のＱのうち、少なくとも１つは式（１９）、式（２０）である。

In the formula, Q is selected from a hydrogen atom, formula (19), and formula (20). Here, at least one of Q of each compound is represented by formula (19) or formula (20).

  As for the addition amount of the photosensitive diazoquinone compound (B) used by this invention, 1-50 weight part is preferable with respect to 100 weight part of alkali-soluble resin (A). More preferably, it is 10 to 40 parts by weight. When the addition amount is within the above range, the sensitivity is particularly excellent.

  The silicon compound (C-1) used in the present invention has a structure represented by the following general formula (1).

（式（１）中、Ｒ_１、Ｒ_２、Ｒ_３、Ｒ_４は有機基である。ｉは１〜３、ｊは０〜２、ｋは０〜２、ｌは１〜４の整数である。）

(In the formula _{(1), R 1, R} 2, R 3, R 4 is an organic radical .i is 1 to 3, j is 0 to 2, k is 0 to 2, l is an integer of from 1 to 4 is there.)

Since the adhesion between the coating film and the substrate is improved by adding the silicon compound, peeling of the fine relief pattern in the development process is not observed, and after the humidity treatment performed after the heat treatment process (described later) Even in the adhesion test based on JIS D0202, no peeling of the pattern is observed. The silicon compound has an alkoxysilane group via a flexible organic group R ₃ , and the alkoxysilane group interacts with the substrate, whereas the flexible organic group is entangled with the alkali-soluble resin. In order to improve the affinity, it is considered that the adhesion in the development process is good. In addition, since the silicon compound has an aromatic ring, it possesses heat resistance that can withstand the heat treatment process, and is considered to have no polar group and excellent moisture resistance stability. It is considered good.
Moreover, the positive photosensitive resin composition to which the silicon compound is added is excellent in storage stability when left at room temperature. This is considered because the silicon compound has a hydrophobic structure that does not have a reactive group with the alkali-soluble resin.

Although R < ₁ >, R < ₂ >, R < ₃ > in General formula (1) will not be specifically limited if it is an organic group, An alkyl group is preferable. Specifically, methyl, ethyl, propyl, isopropyl, butyl, secondary butyl, tertiary butyl, pentyl, hexyl, heptyl, octyl, 2-ethylhexyl, nonyl, decyl Groups, undecyl groups, dodecyl groups, tridecyl groups, tetradecyl groups, and the like, but are not limited thereto.

R ₄ in the general formula (1) is not particularly limited as long as it is an organic group, but is preferably an alkyl group, a cycloalkyl group, an aralkyl group or the like. Specifically, methyl, ethyl, propyl, isopropyl, butyl, secondary butyl, tertiary butyl, pentyl, hexyl, heptyl, octyl, 2-ethylhexyl, nonyl, decyl Group, cyclohexyl group, cyclooctyl group, cyclododecyl group, benzyl group, phenylethyl group, phenylpropyl group, naphthylmethyl group and the like, but are not limited thereto.

  Of the silicon compounds represented by the general formula (1), a structure represented by the following formula (3) is preferable from the viewpoint of adhesion to the substrate and storage stability.

（式中、Ｒ_１、Ｒ_３、Ｒ_４は炭素数１〜１０のアルキル基である。ｉは１〜３、ｊは０〜２、ｌは１〜４の整数である。）

(In the formula, R ₁ , R ₃ , and R ₄ are alkyl groups having 1 to 10 carbon atoms. I is 1 to 3, j is 0 to 2, and l is an integer of 1 to 4.)

  Particularly preferred is a structure represented by the following formula (4) which is further excellent in adhesion to the substrate and storage stability.

（式中、Ｒ_１はメチル基又はエチル基、Ｒ_３はアルキル基である。ｌは１〜４の整数である。）

(In the formula, R ₁ is a methyl group or an ethyl group, R ₃ is an alkyl group. L is an integer of 1 to 4.)

  The amount of the organosilicon compound (C-1) added is preferably 0.05 to 50 parts by weight with respect to 100 parts by weight of the alkali-soluble resin (A). More preferably, it is 0.1-20 weight part. When the addition amount is within the above range, the adhesion to the substrate is good and the storage stability is also excellent.

The silicon compound represented by the general formula (1) includes, for example, methylphenethyl (trimethoxysilane), ethylphenethyl (trimethoxysilane), propylphenethyl (trimethoxysilane), butylphenethyl (trimethoxysilane), methylphenethyl (tri (Ethoxysilane)
, Ethylphenethyl (triethoxysilane), propylphenethyl (triethoxysilane), butylphenethyl (triethoxysilane), methylbenzyl (trimethoxysilane), ethylbenzyl (trimethoxysilane), methylbenzyl (triethoxysilane), ethyl Benzyl (triethoxysilane), 1,3-bis (trimethoxysilylmethyl) benzene, 1,4-bis (trimethoxysilylmethyl) benzene, 1,3-bis (trimethoxysilylethyl) benzene, 1,4- Bis (trimethoxysilylethyl) benzene, 1,3-bis (triethoxysilylmethyl) benzene, 1,4-bis (triethoxysilylmethyl) benzene, 1,3-bis (triethoxysilylethyl) benzene, 1, 4-bis (triethoxysilylethyl) benzene However, it is not limited to these. Of these, ethylphenethyl (trimethoxysilane), 1,3-bis (trimethoxysilylethyl) benzene, and 1,4-bis (trimethoxysilylethyl) benzene, which improve adhesion, are particularly preferable. These may be used alone or in combination.

  In the positive photosensitive resin composition of the present invention, a silicon compound (C-2) represented by the general formula (5) and / or (6) may be used in combination. As a result, since the silicon compound has a carboxylic acid, an effect of reducing the unsettled residue (scum) of the resin that may occur in the peripheral portion of the pattern after the development process is obtained. Moreover, since the said silicon compound interacts with the silicon compound shown by Formula (1) which acted on the board | substrate, affinity further with resin becomes high, and favorable adhesiveness with a board | substrate is acquired.

（式中、Ｒ_８、Ｒ_９、Ｒ_１０、Ｒ_１１は有機基であり、互いに独立であり、同じでも異なっていても良い。ｐは０〜２の整数である。）

(In formula, R < ₈ >, R < ₉ >, R < ₁₀ >, R < ₁₁ > are organic groups, are mutually independent, and may be the same or different. P is an integer of 0-2.)

（式中、Ｒ_１２、Ｒ_１３、Ｒ_１４、Ｒ_１５は有機基であり、互いに独立であり、同じでも異なっていても良い。ｑは０〜２の整数である。）

_{(Wherein, R 12, R 13, R} 14, R 15 is an organic group, independent of each other, may be the same or different .q is an integer of 0 to 2.)

R ₈ in the formula (5) is not particularly limited as long as it is an organic group, but preferred examples include those represented by the following formula (21).

（ここで＊はＣ＝Ｏ基に結合することを示す。式中Eは、−ＣＨ_２−、−Ｃ（ＣＨ_３）_２
−、−Ｏ−、−Ｓ−、−ＳＯ _２−、−ＣＯ−、−ＮＨＣＯ−、−Ｃ（ＣＦ_３）_２−、又
は単結合である。）

(Here, * indicates bonding to a C═O group. In the formula, E represents —CH ₂ —, —C (CH ₃ ) _{2.
-, - O -, - S} -, - SO 2 -, - CO -, - NHCO -, - C (CF 3) 2 -, or a single bond. )

  Particularly preferred among the formulas (22) are those represented by the following formula (22) which is excellent in adhesion.

（ここで＊はＣ＝Ｏ基に結合することを示す。）

(Here, * indicates binding to a C═O group.)

Although R < ₉ > -R < ₁₁ > in Formula (5) will not be specifically limited if it is an organic group, Preferably an alkyl group etc. are mentioned.

R ₁₂ in the formula (6) is not particularly limited as long as it is an organic group, preferably a compound represented by the following formula (23) below.

（ここで＊はＣ＝Ｏ基に結合することを示す。Ｒ_３２は水素原子又は炭素数１〜１０の有機基から選ばれた１つを示し、一部が置換されていてもよい。Ｒ_３３は、アルキル基、アルキルエステル基、アルキルエーテル基、ベンジルエーテル基、ハロゲン原子の内から選ばれた１つを表し、それぞれ同じでも異なっていてもよい。ｗ＝０〜２の整数である。）

(Here, * indicates bonding to a C═O group. R ₃₂ represents one selected from a hydrogen atom or an organic group having 1 to 10 carbon atoms, and a part thereof may be substituted.) ₃₃ represents one selected from an alkyl group, an alkyl ester group, an alkyl ether group, a benzyl ether group, and a halogen atom, and may be the same or different, and is an integer of w = 0 to 2. )

  Particularly preferred among the formulas (23) are those represented by the following formula (24) excellent in adhesion.

（ここで＊はＣ＝Ｏ基に結合することを示す。）

(Here, * indicates binding to a C═O group.)

Although R < ₁₃ > -R < ₁₅ > in Formula (6) will not be specifically limited if it is an organic group, Preferably an alkyl group etc. are mentioned.

  It is preferable that content of the said silicon compound (C-2) is 0.05-30 weight part with respect to 100 weight part of alkali-soluble resin (A). More preferably, it is 0.1-10 weight part. If the addition amount is within the above range, good adhesion to a further substrate can be obtained, and scum that may be generated in the peripheral part of the pattern after the development process due to the appropriate presence of carboxylic acid. There is an effect of further reducing.

  The silicon compound (C-2) can be obtained, for example, by reacting a silicon compound having an amino group with an acid dianhydride or an acid anhydride.

  When the addition amount of the silicon compound (C-1) is X1, and the addition amount of the silicon compound (C-2) is X2, it is preferable to satisfy (X1) / (X2) = 0.1-30.

Particularly preferably, (X1) / (X2) = 1 to 20 is satisfied.
When it is within the above range, the adhesion to the substrate is further good and the storage stability is also excellent.

  Furthermore, in this invention, the compound which has a phenolic hydroxyl group can be used together so that it can pattern without high scum and high sensitivity.

  As a specific structure, one represented by the formula (25) can be given. These may be used alone or in combination of two or more.

  Although content of the compound which has the said phenolic hydroxyl group is not specifically limited, 1-30 weight part is preferable with respect to 100 weight part of alkali-soluble resin (A), More preferably, it is 1-20 weight part. When the addition amount is in the above range, the occurrence of scum is further suppressed during development, and the sensitivity is improved by promoting the solubility of the exposed area.

The resin composition and the positive photosensitive resin composition in the present invention may contain an acrylic, silicone-based, fluorine-based, vinyl-based leveling agent, or an additive such as a silane coupling agent, if necessary.

  Examples of the silane coupling agent include 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, and 3-methacryloxy. Propylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (aminoethyl) -3-aminopropyltrimethoxysilane, N-2- (aminoethyl) -3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane 3-aminopropyltriethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane, bis (triethoxypropyl) tetrasulfide, 3-isocyanate Although propyltriethoxysilane etc. are mentioned, it is not limited to these.

In the present invention, these components are dissolved in a solvent and used in the form of a varnish. Solvents include N-methyl-2-pyrrolidone, γ-butyrolactone, N, N-dimethylacetamide, dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, propylene glycol Monomethyl ether acetate, methyl lactate, ethyl lactate, butyl lactate, methyl-1,3-butylene glycol acetate, 1,3-butylene glycol-3-monomethyl ether, methyl pyruvate, ethyl pyruvate, methyl-3-methoxypropio And the like, and may be used alone or in combination.

  In the method of using the positive photosensitive resin composition of the present invention, first, the composition is applied to a suitable support (substrate), for example, a silicon wafer, a ceramic substrate, an aluminum substrate or the like. When applied on a semiconductor element, the applied amount is applied so that the final film thickness after curing is 0.1 to 30 μm. If the film thickness is below the lower limit value, it will be difficult to fully function as a protective surface film of the semiconductor element. If the film thickness exceeds the upper limit value, it will be difficult to obtain a fine processing pattern. Takes a long time to reduce throughput. Examples of the coating method include spin coating using a spinner, spray coating using a spray coater, dipping, printing, roll coating, and the like. Next, after prebaking at 60 to 130 ° C. to dry the coating film, actinic radiation is applied to the desired pattern shape. As the actinic radiation, X-rays, electron beams, ultraviolet rays, visible rays and the like can be used, but those having a wavelength of 200 to 500 nm are preferable.

  Next, a relief pattern is obtained by dissolving and removing the irradiated portion with a developer. Developers include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia, primary amines such as ethylamine and n-propylamine, diethylamine, and di-n. Secondary amines such as propylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, quaternary ammonium such as tetramethylammonium hydroxide and tetraethylammonium hydroxide An aqueous solution of an alkali such as a salt and an aqueous solution to which an appropriate amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant is added can be preferably used. As a developing method, methods such as spraying, paddle, dipping, and ultrasonic waves are possible.

Next, the relief pattern formed by development is rinsed. Distilled water is used as the rinse liquid. Next, heat treatment is performed to form an oxazole ring, or an oxazole ring and an imide ring, thereby obtaining a final pattern rich in heat resistance.
The heat treatment temperature is preferably 180 ° C to 380 ° C, more preferably 200 ° C to 350 ° C. The heat treatment performed here is the heat treatment step described above.

  Next, the cured film of the positive photosensitive resin composition according to the present invention will be described. The cured film, which is a cured product of the positive photosensitive resin composition, is used not only for semiconductor devices such as semiconductor elements, but also for display devices such as TFT liquid crystal and organic EL, interlayer insulating films for multilayer circuits, and flexible copper-clad It is also useful as a plate cover coat, solder resist film or liquid crystal alignment film.

  Examples of semiconductor device applications include a passivation film formed by forming a cured film of the above-described positive photosensitive resin composition on a semiconductor element, and a cured film of the above-described positive photosensitive resin composition formed on the passivation film. A protective film such as a buffer coating film, an insulating film such as an interlayer insulating film formed by forming a cured film of the above-mentioned positive photosensitive resin composition on a circuit formed on a semiconductor element, Examples include an α-ray blocking film, a planarizing film, a protrusion (resin post), and a partition wall.

Examples of display device applications include a protective film formed by forming a cured film of the above-described positive photosensitive resin composition on a display element, an insulating film or a planarizing film for TFT elements and color filters, MVA, and the like. Protrusions for a liquid crystal display device, partition walls for an organic EL element cathode, and the like. The usage method is based on forming the positive photosensitive resin composition layer patterned on the substrate on which the display element and the color filter are formed according to the semiconductor device application by the above method. High transparency is required for display device applications, especially for insulating films and flattening films. Transparency can be achieved by introducing a post-exposure step before curing the positive photosensitive resin composition layer. It is also possible to obtain a resin layer that is excellent in practical use, which is more preferable in practice.

Hereinafter, the present invention will be described specifically by way of examples.
Example 1
[Synthesis of Alkali-soluble Resin (A-1)]
443.21 g of dicarboxylic acid derivative (active ester) obtained by reacting 0.900 mol of diphenyl ether-4,4′-dicarboxylic acid with 1.800 mol of 1-hydroxy-1,2,3-benzotriazole .900 mol) and 366.26 g (1.000 mol) of hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) propane were added to a thermometer, a stirrer, a raw material inlet, and a dry nitrogen gas inlet tube. The flask was placed in a four-necked separable flask, and 3200 g of N-methyl-2-pyrrolidone was added and dissolved. Thereafter, the mixture was reacted at 75 ° C. for 12 hours using an oil bath.
Next, 34.43 g (0.200 mol) of 4-ethynylphthalic anhydride dissolved in 100 g of N-methyl-2-pyrrolidone was added, and the mixture was further stirred for 12 hours to complete the reaction. After the reaction mixture is filtered, the reaction mixture is put into a solution of water / isopropanol = 3/1 (volume ratio), the precipitate is collected by filtration, washed thoroughly with water, dried under vacuum, and the desired alkali-soluble resin. (A-1) was obtained.

[Synthesis of photosensitive diazoquinone compound]
Phenol formula (Q-1) 15.82 g (0.025 mol) and triethylamine 8.40 g (0.083 mol) are provided with a thermometer, a stirrer, a raw material inlet, and a dry nitrogen gas inlet pipe. Were added and dissolved by adding 135 g of tetrahydrofuran. After cooling the reaction solution to 10 ° C. or lower, 22.30 g (0.083 mol) of 1,2-naphthoquinone-2-diazide-4-sulfonyl chloride was gradually added dropwise with 100 g of tetrahydrofuran so as not to exceed 10 ° C. . Thereafter, the mixture was stirred at 10 ° C. or lower for 5 minutes and then stirred at room temperature for 5 hours to complete the reaction. After filtering the reaction mixture, the reaction mixture was poured into a solution of water / methanol = 3/1 (volume ratio), the precipitate was collected by filtration, washed thoroughly with water, dried under vacuum, and the formula (B-1 A photosensitive diazoquinone compound represented by the structure

[Preparation of positive photosensitive resin composition]
100 g of the synthesized alkali-soluble resin (A-1), 15 g of the photosensitive diazoquinone compound having the structure of the formula (B-1), 18 g of the silicon compound having the structure of the following formula (C-1) -1, and 150 g of γ-butyrolactone Then, the solution was filtered through a Teflon (registered trademark) filter having a pore diameter of 0.2 μm to obtain a positive photosensitive resin composition.

[Evaluation of adhesion in development process]
The positive photosensitive resin composition was applied onto a silicon wafer using a spin coater and then pre-baked at 120 ° C. for 4 minutes on a hot plate to obtain a coating film having a thickness of about 8.0 μm. Through this coating film, a mask made by Toppan Printing Co., Ltd. (test chart No. 1: a remaining pattern and a blank pattern having a width of 0.88 to 50 μm are drawn), and an i-line stepper (manufactured by Nikon Corporation, 4425i). ) was used to irradiate while changing the exposure dose in 10 mJ / cm ² increments from 100 mJ / cm ² to 780mJ / cm ^2.
Next, using a 2.38% tetramethylammonium hydroxide aqueous solution, the exposed portion was dissolved and removed by developing in a time such that the unexposed portion of the coating film was reduced by 0.5 to 1.0 μm, Rinse with pure water for 10 seconds. After the development, the presence or absence of peeling of the 3 μm line at a portion of plus 100 mJ / cm ² was confirmed from the exposure amount on which the pattern was formed. As a result, the 3 μm line remained without peeling, and it was confirmed that the unexposed portion did not peel from the substrate in the development process.

[Adhesion evaluation after humidity treatment]
The positive photosensitive resin composition was applied onto a silicon wafer using a spin coater and then pre-baked at 120 ° C. for 4 minutes on a hot plate to obtain a coating film having a thickness of about 8.0 μm.
Next, heat curing was performed at 150 ° C./30 minutes + 320 ° C./30 minutes using a clean oven at an oxygen concentration of 1,000 ppm or less to obtain a cured film. In this cured film, JIS K540
Based on 0, 100 square grids were created with a 10 × vertical and horizontal square of 1 × 1 (mm) size using a cutter knife. This sample was subjected to a humidity treatment (pressure cooker) test; continuously treated for 24 hours under conditions of 125 ° C., 100%, and 0.2 MPa, and then evaluated according to JIS D0202. As a result, the number of peeled grids was zero. In view of the fact that even one of the 100 grids peeled off, it was confirmed that it showed good adhesion even after humidity treatment.

[Evaluation of storage stability]
The positive photosensitive resin composition was measured for viscosity (T1) with an E-type viscometer (TV-22 type, manufactured by Toki Sangyo Co., Ltd.). As a result, it was 988 Pa. The positive photosensitive resin composition was allowed to stand at room temperature, and after 20 days, the viscosity (T2) was measured again in the same manner as described above. As a result, it was 1220 Pa. The viscosity increase rate calculated by ((T2) − (T1) / (T1)) × 100 (%) was 19%. It was confirmed that the viscosity increase rate in 20 days was 20% or less, which was a practically acceptable level, and the storage stability at room temperature was good.

<< Example 2 >>
Instead of the silicon compound having the structure of the following formula (C-1) -1, a silicon compound having the structure of the following formulas (C-1) -2, (C-2) -1, and (C-2) -2 is used. A positive photosensitive resin composition was prepared and evaluated in the same manner as in Example 1 except that 6 g, 2 g, and 2 g were added.

Example 3
Instead of the silicon compound having the structure of the following formula (C-1) -1, 9 g and 0.5 g of silicon compounds having the structures of the following formulas (C-1) -2 and (C-2) -1 were added, respectively. Except for the above, a positive photosensitive resin composition was prepared and evaluated in the same manner as in Example 1.

Example 4
From the positive photosensitive resin composition of Example 1, 10 g of a silicon compound having the structure of the following formula (C-1) -2 was added instead of the silicon compound having the structure of the following formula (C-1) -1. Except for the above, a positive photosensitive resin composition was prepared and evaluated in the same manner as in Example 1.

Example 5
In the synthesis of the alkali-soluble resin in Example 1, the molar ratio of diphenyl ether-4,4′-dicarboxylic acid was reduced to 0.45 mol, and instead 0.45 mol of isophthalic acid was newly added, and hexafluoro-2, All of 366.66 g (1.000 mol) of 2-bis (3-amino-4-hydroxyphenyl) propane was 286.4 g (1.000 mol) of 4,4′-methylenebis (2-amino-3,6-dimethylphenol). The reaction was carried out in the same manner, and an alkali-soluble resin (A-2) was synthesized.
Instead of the alkali-soluble resin (A-1), (A-2), and instead of the silicon compound having the structure of the following formula (C-1) -1, the following formula (C-1) -2, (C -2) -1 and (C-2) -2, except that 9 g, 2 g, and 1 g of a silicon compound were added, respectively, and a positive photosensitive resin composition was prepared and evaluated in the same manner as in Example 1. It was.

Example 6
Instead of the alkali-soluble resin (A-1), (A-2), and instead of the silicon compound having the structure of the following formula (C-1) -1, the following formula (C-1) -2, (C -2) A positive photosensitive resin composition was prepared and evaluated in the same manner as in Example 1 except that 12 g and 0.8 g of the silicon compound having the structure of -2 were added.

Example 7
The alkali-soluble resin is replaced by (A-2) instead of (A-1), and instead of the silicon compound having the structure of the following formula (C-1) -1, the structure of the following formula (C-1) -2 A positive-type photosensitive resin composition was prepared and evaluated in the same manner as in Example 1 except that 12 g of a silicon compound having a hydrogen content was added.

Example 8
In the synthesis of the alkali-soluble resin in Example 1, the molar ratio of diphenyl ether-4,4′-dicarboxylic acid was reduced to 0.54 mol, and 0.36 mol of isophthalic acid was newly added instead, and hexafluoro-2, All of 366.26 g (1.000 mol) of 2-bis (3-amino-4-hydroxyphenyl) propane was added to 214.78 g (0. 00 mol) of 4,4'-methylenebis (2-amino-3,6-dimethylphenol). 750 mol) and 4,4'-methylenebis (2-aminophenol) 70.08 g (0.250 mol) and reacted in the same manner to synthesize an alkali-soluble resin (A-3).
In place of the alkali-soluble resin (A-1), (A-3), and in place of the silicon compound having the structure of the following formula (C-1) -1, the following formula (C-1) -2, (C -2) The positive photosensitive resin composition as in Example 1 except that 10 g, 1 g, 1 g, and 2 g of silicon compounds having the structures of (C-2) -2 and (C-3) were added. A product was prepared and evaluated.

Example 9
In place of the alkali-soluble resin (A-1), (A-3), and in place of the silicon compound having the structure of the following formula (C-1) -1, the following formula (C-1) -2, (C -2) A positive photosensitive resin composition was prepared and evaluated in the same manner as in Example 1 except that 10 g and 1 g of the silicon compound having the structure of -2 were added.

Example 10
In place of the alkali-soluble resin (A-1), (A-3), and in place of the silicon compound having the structure of the following formula (C-1) -1, the following formula (C-1) -2, (C -2) A positive photosensitive resin composition was prepared and evaluated in the same manner as in Example 1 except that 12 g and 2 g of silicon compounds each having the structure of -1 were added.

≪Comparative example 1≫
A positive photosensitive resin composition was prepared and evaluated in the same manner as in Example 2 except that the silicon compound having the structure of the following formula (C-1) -2 was not added.

≪Comparative example 2≫
A positive photosensitive resin composition as in Example 5 except that 10 g of a silicon compound having the structure of the following formula (C-4) was added instead of the silicon compound having the structure of the following formula (C-1) -2. A product was prepared and evaluated.

«Comparative Example 3»
A positive photosensitive resin composition as in Example 5 except that 10 g of a silicon compound having the structure of the following formula (C-5) was added instead of the silicon compound having the structure of the following formula (C-1) -2. A product was prepared and evaluated.

<< Comparative Example 4 >>
A positive photosensitive resin composition as in Example 5 except that 5 g of a silicon compound having the structure of the following formula (C-6) was added instead of the silicon compound having the structure of the following formula (C-1) -2. A product was prepared and evaluated.
Below, (Q-1), (B-1), (C-1) -1, (C-1) -2, (C-2) -1, and (C-2) of Examples and Comparative Examples -2, (C-3), (C-4), (C-5), (C-6), and Table 1. Here, the numbers of the alkali-soluble resin and the silicon compound in Table 1 are parts by weight.

  As shown in Table 1, in Examples 1 to 10, in the adhesion evaluation after the development process and the moisture absorption treatment, the coating film is not peeled off, and it can be seen that the adhesion to the substrate is good. Moreover, also in storage stability evaluation, the room temperature viscosity increase rate for 20 days is 20% or less, and it is considered that the stability is also excellent.

The positive photosensitive resin composition of the present invention has good adhesion to the substrate even after the development process and moisture absorption treatment, and has excellent storage stability. The semiconductor element, the surface protective film of the display element, the interlayer It is suitably used for an insulating film or the like.

Claims (14)

A positive photosensitive resin composition comprising an alkali-soluble resin (A), a photosensitive diazoquinone compound (B), and a silicon compound (C-1) represented by the general formula (1).

(In the formula _{(1), R 1, R} 2, R 3, R 4 is an organic radical .i is 1 to 3, j is 0 to 2, k is 0 to 2, l is an integer of from 1 to 4 is there.) The positive photosensitive resin composition according to claim 1, wherein the alkali-soluble resin (A) comprises a polyamide-based resin obtained by reacting at least one diamine with a carboxylic acid derivative. The positive photosensitive resin composition according to claim 1, wherein the alkali-soluble resin (A) includes a polyamide-based resin having a repeating unit represented by the general formula (2).

(In the formula, X and Y are organic groups. R ₅ is a hydroxyl group, —O—R ₇ , an alkyl group, an acyloxy group, or a cycloalkyl group, which may be the same or different. R ₆ is a hydroxyl group or a carboxyl group. , —O—R ₇ , —COO—R ₇ , which may be the same or different, m is an integer of 0 to 8, n is an integer of 0 to 8. R ₇ is an integer of 1 to Here, when there are a plurality of R _{5 s} , they may be different or the same, and when R ₅ has no hydroxyl group, at least one R ₆ must be a carboxyl group. In addition, when there is no carboxyl group as R ₆ , at least one R ₅ must be a hydroxyl group. The positive photosensitive composition according to claim 1, wherein the silicon compound (C-1) has the following structure.

(In the formula, R ₁ , R ₃ , and R ₄ are alkyl groups having 1 to 10 carbon atoms. I is 1 to 3, j is 0 to 2, and l is an integer of 1 to 4.) The positive photosensitive resin composition according to any one of claims 1 to 4, wherein the silicon compound (C-1) has the following structure.

(In the formula, R ₁ is a methyl group or an ethyl group, and an R ₃ alkyl group. L is an integer of 1 to 4.) 6. The composition according to claim 1, comprising 0.05 to 50 parts by weight of the silicon compound (C-1) represented by the general formula (1) with respect to 100 parts by weight of the alkali-soluble resin (A). A positive photosensitive resin composition. The positive photosensitive resin composition according to any one of claims 1 to 6, wherein the positive photosensitive resin composition further comprises a silicon compound (C-2) represented by the general formula (5) and / or (6). Photosensitive resin composition.

(In formula, R < ₈ >, R < ₉ >, R < ₁₀ >, R < ₁₁ > are organic groups, are mutually independent, and may be the same or different. P is an integer of 0-2.)

_{(Wherein, R 12, R 13, R} 14, R 15 is an organic group, independent of each other, may be the same or different .q is an integer of 0 to 2.) The silicon compound (C-2) represented by the general formula (5) and / or (6) is included in an amount of 0.05 to 30 parts by weight with respect to 100 parts by weight of the alkali-soluble resin (A). A positive photosensitive resin composition. When the addition amount of the silicon compound (C-1) represented by the general formula (1) is X1, and the addition amount of the silicon compound (C-2) represented by the general formula (5) and / or (6) is X2. , (X1) / (X2) = 0.1-30, The positive photosensitive resin composition according to claim 7 or 8. A cured film comprising a cured product of the positive photosensitive resin composition according to claim 1. A protective film comprising the cured film according to claim 10. An insulating film comprising the cured film according to claim 10. A semiconductor device comprising the cured film according to claim 10. A display device comprising the cured film according to claim 10.