JP2008171864A - Manufacturing method of semiconductor device and substrate for semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, enabling an operator to confirm that the cutting position of a sealing resin is within a permissible range of the position of dicing lines while using a leaser beam to cut the sealing resin for singulation, in manufacturing MAP type semiconductor devices. <P>SOLUTION: The method has steps of forming a concave groove 3 outside a forming region of a semiconductor device 2, along at least one of dicing lines 5a disposed in the same direction, on the surface of a substrate 1 where the semiconductor device 1 is mounted; and filling the resin also into the concave groove 3 when the substrate is integrally sealed with a sealing resin 4. The method also has a step of irradiating the sealing resin 4 with a laser beam so that the resin filled in the concave portion can be irradiated with the laser beam when forming a concave notch. The concave notch to be formed in the concave portion enables the operator to confirm positional deviation of the laser beam irradiation position and the dicing line. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  In the present invention, a plurality of semiconductor elements (semiconductor chips) are mounted on a substrate made of a lead frame, a ceramic substrate, a resin substrate, and the like, and after encapsulating the resin together, the substrate is cut together with the encapsulating resin. The present invention relates to a manufacturing method of a MAP (Mold Array Package) type semiconductor device manufactured by dividing into individual semiconductor devices and a substrate for the semiconductor device. More specifically, when the sealing resin is cut into individual semiconductor devices, the sealing resin portion can be cut without misalignment using a laser beam that marks the surface of the sealing resin. The present invention relates to a semiconductor device manufacturing method and a semiconductor device substrate.

  In recent years, with the miniaturization and high functionality of electronic devices, semiconductor devices are also required to be small and low cost, and a plurality of semiconductor elements are mounted on a substrate such as a lead frame or a ceramic substrate and sealed together with resin. A method of manufacturing each semiconductor device by cutting is employed. By adopting this method, even if the type of the semiconductor device changes, it is possible to form a semiconductor device of a desired size at the time of division while sharing the sealing mold, and seal each shape of the semiconductor device. There is no need to prepare a mold, and the cost can be reduced.

When such a sealing resin portion is cut into individual pieces, a plurality of semiconductor elements are mounted on a substrate 1 such as a lead frame to form a sealing resin 4 in FIG. 3 and divided into each semiconductor device. As shown in the figure schematically showing the cut 5 along the dicing line, the dimension of the cutting position is set and inputted with reference to the alignment mark 6 formed on the substrate 1, and the alignment mark 6 is recognized, the position of each semiconductor device is confirmed and the cutting position is corrected, and cutting is performed by a dicing saw (see, for example, paragraph 0032 of Patent Document 1).
JP 2000-12745 A

  As described above, when cutting after resin sealing is performed using a dicing apparatus equipped with a dicing saw, no problem arises because the alignment mark 6 can be accurately aligned. On the other hand, the surface of each semiconductor device of the sealing resin 4 is marked with a laser beam. If the sealing resin 4 can be cut with the laser beam, then the substrate 1 side is simply cut with a dicing saw. This can reduce the cost. However, the processing with laser light has a low alignment accuracy of the laser beam irradiation device and cannot perform precise alignment like the alignment of a dicing saw. It is necessary to check whether it is within the allowable range. However, in practice, there is a problem that the amount of misalignment cannot be determined unless it is separated into individual pieces.

  The present invention has been made to solve such a problem. When manufacturing a MAP type semiconductor device, the marking resin is cut on the surface of the sealing resin for cutting into individual pieces. Semiconductor device manufacturing method capable of easily confirming whether or not the cutting position is within the allowable range of the position of the dicing line while performing with the laser beam used at the time, and the semiconductor used for the manufacturing method of the semiconductor device An object is to provide a device substrate.

A method of manufacturing a semiconductor device according to the present invention includes a semiconductor that is divided into individual semiconductor devices by mounting a plurality of semiconductor elements on one surface of a substrate, collectively sealing with a sealing resin, and cutting along a dicing line. A method for manufacturing an apparatus, comprising: a substrate having a groove formed at a position on at least one of dicing lines arranged in the same direction, outside a semiconductor device formation region, and at a position connected to the sealing resin. Preparing, mounting a plurality of semiconductor elements on one surface of the substrate, sealing the plurality of semiconductor elements together with a sealing resin, filling the groove with resin, and along the dicing line By irradiating with laser light, a concave cut is formed in the sealing resin and the resin in the concave groove, and the substrate or the substrate and the sealing resin are aligned along the dicing line. It characterized by singulated into individual semiconductor devices by cutting by laser light or dicing saw.

  The width of the concave groove formed in the substrate is a width obtained by adding the width of the concave notch formed along the dicing line and the width of the allowable range of misalignment of the laser light irradiated along the dicing line. By forming, the position of the dicing line can be confirmed very easily.

  A substrate for a semiconductor device according to the present invention is divided into individual semiconductor devices by mounting a plurality of semiconductor elements, sealing one surface mounting the semiconductor elements with a sealing resin, and cutting along a dicing line. A substrate used in a method for manufacturing a semiconductor device, wherein the sealing resin is outside the semiconductor device formation region of the substrate and at a position on at least one line of the dicing line for cutting the sealing resin. A concave groove is formed at the connecting position.

  According to the present invention, a groove is formed on the surface of the substrate on which the semiconductor element is mounted, along the at least one dicing line aligned in the same direction, outside the semiconductor device formation region. When the semiconductor element is mounted and collectively sealed with a sealing resin, the resin is also filled in the concave groove. For this reason, when cutting the sealing resin with laser light, the laser light irradiation position is aligned with the dicing line by checking whether the resin light filled in the concave groove is irradiated with the laser light. It can be confirmed whether or not. If the irradiation position of the laser beam is not within the resin, the laser beam can be reliably moved along the dicing line by adjusting the irradiation position so that the resin is processed by laser beam irradiation. Can be irradiated. As described above, since the irradiation position of the laser beam can be controlled with higher accuracy than in the past, following the marking process formed on the surface of the sealing resin by the irradiation of the laser beam, one of the sealing resins is used for singulation. Part can be removed.

  In this case, if the irradiation position matches with one dicing line, the other dicing lines are always at a constant interval. Therefore, by sequentially irradiating the laser beam with the laser light source shifted by that interval, dicing lines aligned in the same direction are formed. Along with this, the sealing resin can be all processed for cutting. Further, by forming a concave groove on the extension of the dicing line in the middle, the position can be confirmed even when the laser light source is displaced in the middle. Furthermore, if a ditch | groove is formed in the both ends of the dicing line lined up in the same direction, an irradiation position can be confirmed more accurately. The position of the dicing line orthogonal to the direction of the dicing line can be confirmed and cut in the same manner. In addition, by forming the width of the groove with a width that includes the allowable deviation of the position of laser beam irradiation, it is only necessary to confirm whether the laser beam is applied to the resin in the groove. The deviation can be confirmed.

  Next, a method for manufacturing a semiconductor device of the present invention and a substrate such as a lead frame used in the method for manufacturing the semiconductor device will be described with reference to the drawings. In FIG. 1, a plurality of semiconductor elements (not shown) are mounted on a substrate 1 to form necessary connections, and the plurality of semiconductor elements are collectively sealed with a sealing resin 4 and diced into the sealing resin 4. An explanatory plan view of the state in which the notch 5 is formed along the line 5a is shown.

  The substrate 1 for a semiconductor device according to the present invention is formed on at least two sides of the rectangular sealing resin 4 on at least two sides as shown in FIG. A groove 3 is formed outside the semiconductor device formation region and on at least one line of the dicing line 5a for cutting the sealing resin 4 so as to be connected to the sealing resin 4. The width D of the concave groove 3 is formed by adding a width A of the notch 5 along the dicing line 5a and a width 2B of an allowable range of misalignment of the dicing line 5a.

  The substrate 1 may be the same as a lead frame used in a normal IC, for example, a lead frame made of a copper plate having a number of leads formed in four directions for QFN, a ceramic substrate with a wiring formed on the surface, or a glass epoxy. A mounting substrate made of a resin substrate or the like can be used, but the material is not limited.

  The concave groove 3 is formed so as to be connected to the sealing resin 4 on the dicing line 5a (almost the center line of the notch 5) and outside the region where the semiconductor device is formed. In the example shown in FIG. 1, the concave grooves 3 are formed at both ends of each side of the quadrangular sealing resin 4. For example, the concave grooves 3 may be formed on one of the dicing lines 5 a arranged in the same direction. In this case, there is no problem because the dicing lines are parallel at equal pitches. However, as in the example shown in FIG. 1, the grooves 3 are formed at both ends of the same dicing line 5a with the sealing resin 4 sandwiched therebetween. Thus, it is preferable because the positional deviation can be confirmed even when there is an inclination in the scanning direction of the laser beam. Moreover, since it forms in the both ends of each edge | side, the notch 5 can be formed from either side of the board | substrate 1, and there exists the convenience on work. Furthermore, for example, by forming it on the dicing line 5a in the middle, it is possible to confirm the deviation between the dicing line 5a and the position of the laser light source during the work. However, although it is necessary to form at least one of the dicing lines 5a in the same direction, the number of other formations is not limited.

  The width of the groove 3 is for confirming whether laser light irradiation, which will be described later, is applied to this region. If it is too narrow, it is difficult to confirm the positional deviation from the laser light irradiation region. For example, as shown in FIG. 1 (b), it is preferable that the sum of the width A of the notch 5 and the allowable range 2B of the dicing line 5a is D = A + 2B. By forming in such a width, if the cut 5 is within this range, it is always aligned, so it is possible to check the displacement very easily. The reason why the groove 3 is formed and the resin is filled in the groove 3 will be described later.

  Next, a method for manufacturing a semiconductor device using the substrate 1 will be described. First, as described above, the substrate 1 is prepared in which the concave groove 3 is formed on at least one of the dicing lines arranged in the same direction along the dicing line 5a.

  Next, although not shown, a plurality of semiconductor elements are mounted on one surface of the substrate 1 and each electrode of the semiconductor elements is connected to a lead or wiring provided on the substrate 1.

  Thereafter, the plurality of semiconductor elements are collectively sealed with a sealing resin. The sealing resin 4 can seal a plurality of semiconductor elements at once by setting the substrate 1 in a transfer mold, for example, and pouring the resin into a mold. At this time, since the concave groove 3 on the surface of the substrate 1 is formed so as to be connected to the sealing resin 4, as shown in FIG. The resin flows into the concave groove 3 and is filled therewith.

Next, using a laser light source for marking each semiconductor device, the surface of the sealing resin 4 is irradiated with laser light along the dicing line 5a to form a concave cut 5 in the sealing resin 4. The resin portion filled in the groove 3 is irradiated with laser light, and it is confirmed whether or not the cut formed by the laser light irradiation is formed in the resin in the groove 3. If the laser beam irradiation position is not aligned with the dicing line 5a, the inside of the semiconductor device is cut. Therefore, within the allowable range of misalignment of the dicing line 5a, that is, in the example shown in FIG. Make sure that there is a notch. If it is not within this range, the irradiation position of the laser beam is adjusted so that it falls within the range D.

  After that, a cut 5 is formed in the sealing resin 4 along the dicing line 5a with a laser beam, and the cut 5 is cut into the sealing resin 4 along each dicing line 5a while sequentially moving at a predetermined pitch (pitch of the dicing line 5a). Insert. The cut 5 is formed to such a depth that a part of the bottom of the sealing resin 4 is left as shown in FIG. Similarly, on the orthogonal sides of the rectangular sealing resin 4, the laser beam irradiation position is confirmed with the resin in the concave groove 3, and the grid-like cuts 5 are sealed by sequentially making the cuts 5. Formed on the stop resin 4. Thereafter, as shown in FIG. 2, each semiconductor device is formed by cutting from the back surface of the substrate 1 along the dicing line 5a with a laser beam or a dicing saw to form a cutting groove 7 reaching the previously formed cut 5. Divide 2 into pieces. As a result, individual semiconductor devices 2 are obtained.

  According to the present invention, since the marking of the semiconductor device and the cutting of the sealing resin can be performed continuously with the marking process using the same laser light source, the work process can be shortened. In particular, when the cutting groove 7 is formed by the dicing saw, since the notch 5 is formed, the dicing saw can be prevented from contacting the adhesive tape to which the substrate 1 is attached, and the adhesive adheres to the dicing saw. Can be prevented.

It is plane explanatory drawing of the state which formed sealing resin in the board | substrate by this invention, and formed the cut along a dicing line, and a partial cross section explanatory drawing. FIG. 2 is a partial cross-sectional explanatory view showing a relationship between a cut formed in a sealing resin and a cut groove formed on the substrate side when the substrate of FIG. 1 is solidified. It is plane explanatory drawing which shows the part of the conventional MAP type board | substrate and sealing resin.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Board | substrate 2 Semiconductor device 3 Concave groove 4 Sealing resin 5 Cutting 5a Dicing line 7 Cutting groove

Claims (3)

A semiconductor device manufacturing method in which a plurality of semiconductor elements are mounted on one surface of a substrate, collectively sealed with a sealing resin, and cut along dicing lines to divide into individual semiconductor devices,
Preparing a substrate having a groove formed at a position on at least one line of dicing lines arranged in the same direction, outside the formation region of the semiconductor device, and connected to the sealing resin;
A plurality of semiconductor elements are mounted on one surface of the substrate,
The plurality of semiconductor elements are collectively sealed with a sealing resin, and the resin is also filled in the concave groove,
By forming a concave cut in the sealing resin and the resin in the concave groove by irradiating laser light along the dicing line,
A method of manufacturing a semiconductor device, wherein the substrate or the substrate and the sealing resin are cut into individual semiconductor devices by cutting with a laser beam or a dicing saw along the dicing line.   The width of the concave groove formed in the substrate is a width obtained by adding the width of the concave notch formed along the dicing line and the width of the allowable range of misalignment of the laser light irradiated along the dicing line. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is formed.   A substrate used in a method of manufacturing a semiconductor device in which a plurality of semiconductor elements are mounted, one surface on which the semiconductor elements are mounted is sealed with a sealing resin, and cut along dicing lines into individual semiconductor devices. A groove is formed outside the semiconductor device formation region of the substrate and at a position on at least one line of the dicing line that cuts the sealing resin at a position where it is connected to the sealing resin. A substrate for a semiconductor device.

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