JP2008169425A - Plating ability maintenance management method of electroless gold plating bath - Google Patents
Plating ability maintenance management method of electroless gold plating bath Download PDFInfo
- Publication number
- JP2008169425A JP2008169425A JP2007003139A JP2007003139A JP2008169425A JP 2008169425 A JP2008169425 A JP 2008169425A JP 2007003139 A JP2007003139 A JP 2007003139A JP 2007003139 A JP2007003139 A JP 2007003139A JP 2008169425 A JP2008169425 A JP 2008169425A
- Authority
- JP
- Japan
- Prior art keywords
- gold
- plating
- plating bath
- bisulfite adduct
- bath
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007747 plating Methods 0.000 title claims abstract description 162
- 229910052737 gold Inorganic materials 0.000 title claims abstract description 151
- 239000010931 gold Substances 0.000 title claims abstract description 151
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims abstract description 150
- 238000012423 maintenance Methods 0.000 title claims description 16
- 238000007726 management method Methods 0.000 title claims description 16
- DETXZQGDWUJKMO-UHFFFAOYSA-N 2-hydroxymethanesulfonic acid Chemical compound OCS(O)(=O)=O DETXZQGDWUJKMO-UHFFFAOYSA-N 0.000 claims abstract description 119
- -1 amine compound Chemical class 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 24
- WOFVPNPAVMKHCX-UHFFFAOYSA-N N#C[Au](C#N)C#N Chemical class N#C[Au](C#N)C#N WOFVPNPAVMKHCX-UHFFFAOYSA-N 0.000 claims abstract description 16
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000003513 alkali Substances 0.000 claims abstract description 10
- 239000008139 complexing agent Substances 0.000 claims abstract description 7
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 39
- IZLAVFWQHMDDGK-UHFFFAOYSA-N gold(1+);cyanide Chemical compound [Au+].N#[C-] IZLAVFWQHMDDGK-UHFFFAOYSA-N 0.000 claims description 6
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 101
- 229910052759 nickel Inorganic materials 0.000 abstract description 51
- 230000007797 corrosion Effects 0.000 abstract description 16
- 238000005260 corrosion Methods 0.000 abstract description 16
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 42
- 229910052763 palladium Inorganic materials 0.000 description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- 229910052802 copper Inorganic materials 0.000 description 16
- 239000010949 copper Substances 0.000 description 16
- 230000008021 deposition Effects 0.000 description 12
- 239000003638 chemical reducing agent Substances 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 10
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 9
- 238000000354 decomposition reaction Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000002585 base Substances 0.000 description 8
- 238000006073 displacement reaction Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 239000010953 base metal Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000007654 immersion Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 5
- 238000003287 bathing Methods 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000001603 reducing effect Effects 0.000 description 5
- 229910000990 Ni alloy Inorganic materials 0.000 description 4
- 229910001252 Pd alloy Inorganic materials 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 239000003381 stabilizer Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 230000000153 supplemental effect Effects 0.000 description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- 229910001096 P alloy Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 235000010338 boric acid Nutrition 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000010828 elution Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- XTFKWYDMKGAZKK-UHFFFAOYSA-N potassium;gold(1+);dicyanide Chemical compound [K+].[Au+].N#[C-].N#[C-] XTFKWYDMKGAZKK-UHFFFAOYSA-N 0.000 description 2
- 230000008719 thickening Effects 0.000 description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 2
- NJRXVEJTAYWCQJ-UHFFFAOYSA-N thiomalic acid Chemical compound OC(=O)CC(S)C(O)=O NJRXVEJTAYWCQJ-UHFFFAOYSA-N 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- DMOXNIKYXJYCFQ-UHFFFAOYSA-N (2-hydroxy-1-phosphonooxyethyl) dihydrogen phosphate Chemical compound OP(=O)(O)OC(CO)OP(O)(O)=O DMOXNIKYXJYCFQ-UHFFFAOYSA-N 0.000 description 1
- DIWZKTYQKVKILN-VKHMYHEASA-N (2s)-2-(dicarboxymethylamino)pentanedioic acid Chemical compound OC(=O)CC[C@@H](C(O)=O)NC(C(O)=O)C(O)=O DIWZKTYQKVKILN-VKHMYHEASA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- SLFNBFCWCWWIIB-UHFFFAOYSA-N 2-(dihydroxyamino)acetic acid Chemical compound ON(O)CC(O)=O SLFNBFCWCWWIIB-UHFFFAOYSA-N 0.000 description 1
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 1
- DMQQXDPCRUGSQB-UHFFFAOYSA-N 2-[3-[bis(carboxymethyl)amino]propyl-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CCCN(CC(O)=O)CC(O)=O DMQQXDPCRUGSQB-UHFFFAOYSA-N 0.000 description 1
- WYMDDFRYORANCC-UHFFFAOYSA-N 2-[[3-[bis(carboxymethyl)amino]-2-hydroxypropyl]-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)CN(CC(O)=O)CC(O)=O WYMDDFRYORANCC-UHFFFAOYSA-N 0.000 description 1
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 1
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 244000248349 Citrus limon Species 0.000 description 1
- 235000005979 Citrus limon Nutrition 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- JYXGIOKAKDAARW-UHFFFAOYSA-N N-(2-hydroxyethyl)iminodiacetic acid Chemical compound OCCN(CC(O)=O)CC(O)=O JYXGIOKAKDAARW-UHFFFAOYSA-N 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical group [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- DULSNUJHZMVVDL-UHFFFAOYSA-N azane;formaldehyde;sulfurous acid Chemical compound [NH4+].O=C.OS([O-])=O DULSNUJHZMVVDL-UHFFFAOYSA-N 0.000 description 1
- IQXHAJSMTNDJGA-UHFFFAOYSA-O azanium;gold(1+);dicyanide Chemical compound [NH4+].[Au+].N#[C-].N#[C-] IQXHAJSMTNDJGA-UHFFFAOYSA-O 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 description 1
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- DEFVIWRASFVYLL-UHFFFAOYSA-N ethylene glycol bis(2-aminoethyl)tetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)CCOCCOCCN(CC(O)=O)CC(O)=O DEFVIWRASFVYLL-UHFFFAOYSA-N 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- DXRFSTNITSDOKK-UHFFFAOYSA-N formaldehyde;sulfurous acid Chemical class O=C.OS(O)=O DXRFSTNITSDOKK-UHFFFAOYSA-N 0.000 description 1
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 150000003109 potassium Chemical class 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- ALVGPPOPGPCDCG-UHFFFAOYSA-M potassium;formaldehyde;hydrogen sulfite Chemical compound [K+].O=C.OS([O-])=O ALVGPPOPGPCDCG-UHFFFAOYSA-M 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- VMDSWYDTKFSTQH-UHFFFAOYSA-N sodium;gold(1+);dicyanide Chemical compound [Na+].[Au+].N#[C-].N#[C-] VMDSWYDTKFSTQH-UHFFFAOYSA-N 0.000 description 1
- UOULCEYHQNCFFH-UHFFFAOYSA-M sodium;hydroxymethanesulfonate Chemical compound [Na+].OCS([O-])(=O)=O UOULCEYHQNCFFH-UHFFFAOYSA-M 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- DHCDFWKWKRSZHF-UHFFFAOYSA-N sulfurothioic S-acid Chemical compound OS(O)(=O)=S DHCDFWKWKRSZHF-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
本発明は無電解金めっき浴のめっき能の維持管理方法に関する。 The present invention relates to a method for maintaining and managing the plating ability of an electroless gold plating bath.
金は、金属の中で最もイオン化傾向が小さい、つまり最も安定で錆びにくい金属である。またそれだけでなく、電気伝導性にも優れていることから、電子工業分野に広く用いられている。置換金めっきは、プリント基板の回路やICパッケージの実装部分や端子部分等の最終表面処理として幅広く使用されている。具体的には、例えば以下の方法があり、各々以下のような特徴がある。 Gold is the metal with the smallest ionization tendency, that is, the most stable and rust-resistant metal. In addition, it is also widely used in the electronics industry because of its excellent electrical conductivity. Displacement gold plating is widely used as a final surface treatment for printed circuit boards, IC package mounting parts, terminal parts, and the like. Specifically, for example, there are the following methods, each having the following characteristics.
(1)ENIG(Electroless Nickel Immersion Gold:無電解ニッケル/置換金)
・下地無電解ニッケルめっき皮膜上に、置換金めっき皮膜を形成する方法である。
・銅の拡散防止、ニッケルの酸化防止、回路や端子の耐食性向上が可能である。
・はんだ接合に使用可能である。
・ENIG処理後、厚付け金を施すことでワイヤボンディングにも使用可能である。
・ワイヤボンディングの場合、めっき処理後に加熱処理を行なうが、それにより金皮膜上にニッケルが拡散する。それを防ぐためにニッケル/置換金皮膜上に更に無電解金めっきを施し、金の膜厚を増やすことでニッケルの拡散に対応する。
(1) ENIG (Electroless Nickel Immersion Gold)
-This is a method of forming a displacement gold plating film on a base electroless nickel plating film.
・ Can prevent copper diffusion, prevent nickel oxidation, and improve the corrosion resistance of circuits and terminals.
・ Can be used for solder joints.
-It can also be used for wire bonding by applying thickening after ENIG processing.
In the case of wire bonding, heat treatment is performed after the plating treatment, which causes nickel to diffuse on the gold film. In order to prevent this, electroless gold plating is further applied on the nickel / substituted gold film, and the gold film thickness is increased to cope with nickel diffusion.
(2)DIG(Direct Immersion Gold:直接置換金)
・銅上に直接置換金めっき皮膜を形成する方法である。
・銅の酸化防止、銅の拡散防止、回路や端子の耐食性向上が可能である。
・はんだ接合、ワイヤボンディングにも使用可能である。
・ニッケル/金やニッケル/パラジウム/金に比べると、長期信頼性にはやや劣るが、熱負荷があまりかからない条件(熱処理温度が低い、リフロー回数が少ない等の条件)では十分使用可能である。
・シンプルなプロセスなので低コストである。
(2) DIG (Direct Immersion Gold)
-This is a method of forming a displacement gold plating film directly on copper.
-It can prevent copper oxidation, prevent copper diffusion, and improve the corrosion resistance of circuits and terminals.
・ Can also be used for solder bonding and wire bonding.
-Compared to nickel / gold or nickel / palladium / gold, the long-term reliability is slightly inferior, but it can be used satisfactorily under conditions where the heat load is not so high (conditions such as low heat treatment temperature and few reflows).
・ Since it is a simple process, it is low cost.
(3)ENEPIG(Electroless Nickel Electroless Palladium Immersion Gold:無電解ニッケル/無電解パラジウム/置換金)
・下地無電解ニッケルめっき皮膜と置換金めっき皮膜の間に無電解パラジウムめっき皮膜を設ける方法である。
・銅の拡散防止、ニッケルの酸化防止と拡散防止、回路や端子の耐食性向上が可能である。
・近年推進されている鉛フリーはんだ接合に最適である(鉛フリーはんだは、錫鉛共晶はんだに比べ、はんだ接合時に熱負荷がかかり、ニッケル/金では接合特性が低下するため。)。
・ワイヤボンディングに適している。
・金膜厚を厚くしなくてもニッケル拡散が生じない。
・ニッケル/金で対応可能のものでも、より信頼性をあげたい場合に好適である。
(3) ENEPIG (Electroless Nickel Electroless Palladium Immersion Gold)
This is a method of providing an electroless palladium plating film between the base electroless nickel plating film and the displacement gold plating film.
-Prevents copper diffusion, prevents nickel oxidation and diffusion, and improves corrosion resistance of circuits and terminals.
・ It is most suitable for lead-free solder joints that have been promoted in recent years (lead-free solder is subject to a thermal load during solder joining compared to tin-lead eutectic solder, and the joint characteristics of nickel / gold are reduced).
・ Suitable for wire bonding.
-Nickel diffusion does not occur even if the gold film thickness is not increased.
-Even if nickel / gold can be used, it is suitable for higher reliability.
置換金めっきはニッケルなどの下地とのめっき浴中での酸化還元電位の差を利用して金を析出させるため、金がニッケルを侵食することで酸化(溶出)による腐食点が発生する。この酸化による腐食点は、その後のはんだリフロー時において、はんだ層の錫とニッケルを接続させる際の阻害因子となり、強度などの接合特性を低下させるという問題がある。 In displacement gold plating, gold is deposited by utilizing the difference in oxidation-reduction potential in a plating bath with a base such as nickel. Therefore, corrosion points due to oxidation (elution) occur when gold erodes nickel. This corrosion point due to oxidation becomes a hindrance when connecting tin and nickel of the solder layer during the subsequent solder reflow, and there is a problem that joint characteristics such as strength are deteriorated.
この問題を解決するために、アルデヒドの亜硫酸塩付加物を含有する無電解金めっき浴が、特開2004−137589号公報(特許文献1)に、ヒドロキシアルキルスルホン酸を含有する金めっき浴が、国際公開第2004/111287号パンフレット(特許文献2)に各々開示されている。これらの技術は下地金属の腐食を抑えることを目的としたものである。 In order to solve this problem, an electroless gold plating bath containing a sulfite adduct of an aldehyde is disclosed in Japanese Patent Application Laid-Open No. 2004-137589 (Patent Document 1), wherein a gold plating bath containing a hydroxyalkylsulfonic acid is Each is disclosed in International Publication No. 2004/111287 pamphlet (Patent Document 2). These techniques are intended to suppress corrosion of the base metal.
しかしながら、国際公開第2004/111287号パンフレット(特許文献2)に記載されているトリエチレンテトラミンのような、アミノ基(−NH2)が存在する1級アミン化合物を用いると、ニッケル表面の粒界侵食が進行することにより金の被覆力が低下し、皮膜外観が赤くなるという不具合が生じる。 However, when a primary amine compound having an amino group (—NH 2 ) such as triethylenetetramine described in International Publication No. 2004/111287 pamphlet (Patent Document 2) is used, grain boundaries on the nickel surface are used. As the erosion progresses, the covering power of gold is reduced, and the film appearance becomes red.
本発明は、上記事情に鑑みなされたものであり、ニッケル表面の粒界侵食が進行することによる外観不良を引き起こさず、良好な皮膜外観の金めっき皮膜が得られる無電解金めっき浴のめっき能を長期間、安定的に維持管理する方法、更には、めっき処理によりシアン化金塩が消費された無電解金めっき浴を長期間、安定的に維持管理する方法を提供することを目的とする。 The present invention has been made in view of the above circumstances, and does not cause poor appearance due to the progress of grain boundary erosion on the nickel surface, and the plating ability of an electroless gold plating bath that provides a gold-plated film having a good film appearance. And a method for stably maintaining and managing an electroless gold plating bath in which gold cyanide salt has been consumed by plating treatment for a long period of time. .
本発明者は、金成分としてシアン化金塩、還元剤成分としてホルムアルデヒド重亜硫酸付加物及び下記一般式(1)又は(2)
R1−NH−C2H4−NH−R2 (1)
R3−(CH2−NH−C2H4−NH−CH2)n−R4 (2)
(式(1)及び(2)中、R1、R2、R3及びR4は−OH、−CH3、−CH2OH、−C2H4OH、−CH2N(CH3)2、−CH2NH(CH2OH)、−CH2NH(C2H4OH)、−C2H4NH(CH2OH)、−C2H4NH(C2H4OH)、−CH2N(CH2OH)2、−CH2N(C2H4OH)2、−C2H4N(CH2OH)2又は−C2H4N(C2H4OH)2を表わし、同じであっても異なっていてもよい。nは1〜4の整数である。)
で表されるアミン化合物を含有する無電解金めっき浴を用いることで、上記にあるようなニッケル表面の粒界腐食が生じにくくなることを見出したが、これらのめっき浴は、めっき作業の有無に拘わらず、シアンと還元剤成分であるホルムアルデヒド重亜硫酸付加物及び上記一般式(1)又は(2)で表されるアミン化合物がめっき浴中から徐々に消失することにより、浴分解を起こすという問題があることがわかった。そこで、これらの消失成分を適正な濃度比率で少量ずつ補給することにより上記問題が解決できることを見出した。
The present inventor made gold cyanide as a gold component, formaldehyde bisulfite adduct as a reducing agent component, and the following general formula (1) or (2)
R 1 —NH—C 2 H 4 —NH—R 2 (1)
R 3 — (CH 2 —NH—C 2 H 4 —NH—CH 2 ) n —R 4 (2)
(In the formulas (1) and (2), R 1 , R 2 , R 3 and R 4 are —OH, —CH 3 , —CH 2 OH, —C 2 H 4 OH, —CH 2 N (CH 3 ). 2 , —CH 2 NH (CH 2 OH), —CH 2 NH (C 2 H 4 OH), —C 2 H 4 NH (CH 2 OH), —C 2 H 4 NH (C 2 H 4 OH), -CH 2 N (CH 2 OH) 2, -CH 2 N (C 2 H 4 OH) 2, -C 2 H 4 N (CH 2 OH) 2 or -C 2 H 4 N (C 2 H 4 OH) 2 represents the same or different, and n is an integer of 1 to 4.)
By using an electroless gold plating bath containing an amine compound represented by the above, it was found that the intergranular corrosion of the nickel surface as described above is less likely to occur. Regardless of, the formaldehyde bisulfite adduct, which is a component of cyanide and reducing agent, and the amine compound represented by the above general formula (1) or (2) gradually disappear from the plating bath, thereby causing bath decomposition. I found out there was a problem. Therefore, it has been found that the above problem can be solved by replenishing these disappearing components in small amounts at an appropriate concentration ratio.
即ち、本発明は、以下の無電解金めっき浴のめっき能維持管理方法を提供する。
[1] シアン化金塩、錯化剤、ホルムアルデヒド重亜硫酸塩付加物、及び下記一般式(1)又は(2)
R1−NH−C2H4−NH−R2 (1)
R3−(CH2−NH−C2H4−NH−CH2)n−R4 (2)
(式(1)及び(2)中、R1、R2、R3及びR4は−OH、−CH3、−CH2OH、−C2H4OH、−CH2N(CH3)2、−CH2NH(CH2OH)、−CH2NH(C2H4OH)、−C2H4NH(CH2OH)、−C2H4NH(C2H4OH)、−CH2N(CH2OH)2、−CH2N(C2H4OH)2、−C2H4N(CH2OH)2又は−C2H4N(C2H4OH)2を表わし、同じであっても異なっていてもよい。nは1〜4の整数である。)
で表されるアミン化合物を含有する無電解金めっき浴を70〜90℃に保持した状態で上記無電解金めっき浴のめっき能を安定に維持管理する方法であって、シアン化アルカリ並びに上記ホルムアルデヒド重亜硫酸塩付加物及びアミン化合物を第1の補給成分として定期的に補給することを特徴とする無電解金めっき浴のめっき能維持管理方法。
[2] 上記シアン化アルカリ、ホルムアルデヒド重亜硫酸塩付加物及びアミン化合物の補給比率が、シアン化アルカリ:ホルムアルデヒド重亜硫酸塩付加物:アミン化合物=0.5〜5:1:0.1〜5(モル比)となるように補給することを特徴とする[1]記載の無電解金めっき浴のめっき能維持管理方法。
[3] 上記第1の補給成分をそのホルムアルデヒド重亜硫酸塩付加物基準で建浴時の濃度の0.1〜5モル%を1時間当り1〜20回に分けて補給することを特徴とする[2]記載の無電解金めっき浴のめっき能維持管理方法。
[4] 更に、めっき処理により金が消費されためっき浴に対し、上記シアン化金塩、ホルムアルデヒド重亜硫酸塩付加物及びアミン化合物を第2の補給成分として補給することを特徴とする[1]乃至[3]のいずれかに記載の無電解金めっき浴のめっき能維持管理方法。
[5] 上記シアン化金塩、ホルムアルデヒド重亜硫酸塩付加物及びアミン化合物の補給比率が、シアン化金塩:ホルムアルデヒド重亜硫酸塩付加物:アミン化合物=1:0.1〜5:0.5〜5(モル比)となるように補給することを特徴とする[4]記載の無電解金めっき浴のめっき能維持管理方法。
[6] 上記第2の補給成分をそのホルムアルデヒド重亜硫酸塩付加物基準で建浴時の濃度の0.1〜5モル%を1時間当り1〜20回に分けて補給することを特徴とする[5]記載の無電解金めっき浴のめっき能維持管理方法。
[7] 上記ホルムアルデヒド重亜硫酸塩付加物の1回の補給量がめっき浴1L当り2ミリモル以下であることを特徴とする[3]又は[6]記載の無電解金めっき浴のめっき能維持管理方法。
[8] 上記補給するホルムアルデヒド重亜硫酸塩付加物の一部又は全部を、上記ホルムアルデヒド重亜硫酸塩付加物の代わりに同モル量のホルムアルデヒドで補給することを特徴とする[1]乃至[7]のいずれかに記載の無電解金めっき浴のめっき能維持管理方法。
That is, this invention provides the plating ability maintenance management method of the following electroless gold plating baths.
[1] Gold cyanide salt, complexing agent, formaldehyde bisulfite adduct, and the following general formula (1) or (2)
R 1 —NH—C 2 H 4 —NH—R 2 (1)
R 3 — (CH 2 —NH—C 2 H 4 —NH—CH 2 ) n —R 4 (2)
(In the formulas (1) and (2), R 1 , R 2 , R 3 and R 4 are —OH, —CH 3 , —CH 2 OH, —C 2 H 4 OH, —CH 2 N (CH 3 ). 2 , —CH 2 NH (CH 2 OH), —CH 2 NH (C 2 H 4 OH), —C 2 H 4 NH (CH 2 OH), —C 2 H 4 NH (C 2 H 4 OH), -CH 2 N (CH 2 OH) 2, -CH 2 N (C 2 H 4 OH) 2, -C 2 H 4 N (CH 2 OH) 2 or -C 2 H 4 N (C 2 H 4 OH) 2 represents the same or different, and n is an integer of 1 to 4.)
A method for stably maintaining and managing the plating performance of the electroless gold plating bath in a state where the electroless gold plating bath containing the amine compound represented by the formula is maintained at 70 to 90 ° C., comprising alkali cyanide and formaldehyde A plating capacity maintenance and management method for an electroless gold plating bath, wherein a bisulfite adduct and an amine compound are periodically replenished as a first replenishing component.
[2] The supply ratio of the alkali cyanide, formaldehyde bisulfite adduct, and amine compound is alkali cyanide: formaldehyde bisulfite adduct: amine compound = 0.5 to 5: 1: 0.1 to 5 ( The plating ability maintenance and management method for the electroless gold plating bath according to [1], wherein the molar ratio is replenished.
[3] The above-mentioned first replenishing component is replenished in an amount of 0.1 to 5 mol% of the concentration at the time of building bath in 1 to 20 times per hour on the basis of the formaldehyde bisulfite adduct. [2] The plating ability maintenance and management method of the electroless gold plating bath according to [2].
[4] Further, the gold cyanide salt, formaldehyde bisulfite adduct and amine compound are replenished as a second replenishing component to the plating bath in which gold is consumed by the plating treatment [1] The plating ability maintenance management method of the electroless gold-plating bath in any one of thru | or [3].
[5] The replenishment ratio of the gold cyanide salt, formaldehyde bisulfite adduct and amine compound is as follows: gold cyanide salt: formaldehyde bisulfite adduct: amine compound = 1: 0.1 to 5: 0.5 to 5. The plating ability maintenance and management method for an electroless gold plating bath according to [4], wherein replenishment is performed so as to be 5 (molar ratio).
[6] The above-mentioned second replenishing component is replenished in an amount of 0.1 to 5 mol% of the concentration at the time of bathing on the basis of the formaldehyde bisulfite adduct, divided into 1 to 20 times per hour. [5] The plating ability maintenance and management method of the electroless gold plating bath according to [5].
[7] The plating capacity maintenance management of the electroless gold plating bath according to [3] or [6], wherein the amount of one-time replenishment of the formaldehyde bisulfite adduct is 2 mmol or less per liter of the plating bath Method.
[8] A part or all of the replenished formaldehyde bisulfite adduct is supplemented with the same molar amount of formaldehyde instead of the formaldehyde bisulfite adduct. The plating capacity maintenance management method of the electroless gold plating bath in any one.
本発明によれば、ニッケル表面の粒界侵食が進行することによる外観不良を引き起こさず、良好な皮膜外観の金めっき皮膜を形成する無電解金めっき浴のめっき能を長期間、安定的に維持管理することができ、また、めっき処理によりシアン化金塩が消費された無電解金めっき浴を長期間、安定的に維持管理することができる。 According to the present invention, the plating ability of an electroless gold plating bath that forms a gold plating film having a good film appearance is stably maintained for a long period of time without causing appearance defects due to the progress of grain boundary erosion on the nickel surface. The electroless gold plating bath in which the gold cyanide salt has been consumed by the plating treatment can be stably maintained for a long period of time.
以下、本発明について更に詳述する。
本発明の無電解金めっき浴は、シアン化金塩、錯化剤、ホルムアルデヒド重亜硫酸塩付加物、及び下記一般式(1)又は(2)
R1−NH−C2H4−NH−R2 (1)
R3−(CH2−NH−C2H4−NH−CH2)n−R4 (2)
(式(1)及び(2)中、R1、R2、R3及びR4は−OH、−CH3、−CH2OH、−C2H4OH、−CH2N(CH3)2、−CH2NH(CH2OH)、−CH2NH(C2H4OH)、−C2H4NH(CH2OH)、−C2H4NH(C2H4OH)、−CH2N(CH2OH)2、−CH2N(C2H4OH)2、−C2H4N(CH2OH)2又は−C2H4N(C2H4OH)2を表し、同じであっても異なっていてもよい。nは1〜4の整数である。)
で表されるアミン化合物を含有する。
The present invention will be described in detail below.
The electroless gold plating bath of the present invention comprises a gold cyanide salt, a complexing agent, a formaldehyde bisulfite adduct, and the following general formula (1) or (2)
R 1 —NH—C 2 H 4 —NH—R 2 (1)
R 3 — (CH 2 —NH—C 2 H 4 —NH—CH 2 ) n —R 4 (2)
(In the formulas (1) and (2), R 1 , R 2 , R 3 and R 4 are —OH, —CH 3 , —CH 2 OH, —C 2 H 4 OH, —CH 2 N (CH 3 ). 2 , —CH 2 NH (CH 2 OH), —CH 2 NH (C 2 H 4 OH), —C 2 H 4 NH (CH 2 OH), —C 2 H 4 NH (C 2 H 4 OH), -CH 2 N (CH 2 OH) 2, -CH 2 N (C 2 H 4 OH) 2, -C 2 H 4 N (CH 2 OH) 2 or -C 2 H 4 N (C 2 H 4 OH) 2 may be the same or different, and n is an integer of 1 to 4.)
The amine compound represented by these is contained.
本発明の無電解金めっき浴は、従来の置換金めっき浴とは異なり、同一のめっき浴中で、置換反応と還元反応との双方が進行する置換−還元型無電解金めっき浴である。金めっき浴に、ホルムアルデヒド重亜硫酸塩付加物と、上記一般式(1)又は(2)で表される特有の構造を有するアミン化合物とを含有させることで、本発明の無電解金めっき浴は、銅、ニッケルなどの下地金属上で、置換反応により金が析出すると共に、その析出した金を触媒として還元剤により金が析出する。 The electroless gold plating bath of the present invention is a substitution-reduction type electroless gold plating bath in which both a substitution reaction and a reduction reaction proceed in the same plating bath, unlike a conventional substitution gold plating bath. The electroless gold plating bath of the present invention contains a formaldehyde bisulfite adduct and an amine compound having a specific structure represented by the general formula (1) or (2) in the gold plating bath. Gold is deposited by a substitution reaction on a base metal such as copper or nickel, and gold is deposited by a reducing agent using the deposited gold as a catalyst.
本発明の無電解金めっき浴は、下地金属の侵食が最低限に抑えられるため、めっき浴中への下地金属イオンの溶出が少なく、長期に亘って使用しても安定した析出速度が保たれる。例えば、通常の置換めっきであれば、析出した金と溶出した下地金属(例えば銅やニッケル)の量は化学量論に従って等量となるが、本発明のめっき浴では、例えばENIGプロセスを行なった場合、金の析出の大部分が置換めっきから還元めっきにシフトするため、析出した金に対して溶出する下地ニッケルの溶出は非常に少なく、この場合、従来の通常の置換金めっきの1/8程度に抑えられる。 In the electroless gold plating bath of the present invention, since the erosion of the base metal is minimized, the dissolution of the base metal ions in the plating bath is small, and a stable deposition rate is maintained even when used over a long period of time. It is. For example, in the case of ordinary displacement plating, the amount of deposited gold and eluted base metal (for example, copper or nickel) is equivalent according to the stoichiometry, but in the plating bath of the present invention, for example, the ENIG process was performed. In this case, since most of the gold deposition shifts from displacement plating to reduction plating, the dissolution of the underlying nickel that elutes with respect to the deposited gold is very small. In this case, 1/8 of the conventional ordinary displacement gold plating. To a certain extent.
これによって、下地金属の侵食を最低限に抑え、かつ均一で緻密な金めっき皮膜を得ることができる。また、還元剤を含有していることで、析出した金上に、連続して金が析出するので、別途厚付け用の金めっきを行なうことなく、1つのめっき浴で厚膜化が可能である。また、金の析出速度を安定して維持することができ、厚膜化してもめっき皮膜が赤っぽくならず、金特有のレモンイエロー色を保持することができる。 As a result, it is possible to obtain a uniform and dense gold plating film while minimizing the erosion of the base metal. In addition, because it contains a reducing agent, gold continuously deposits on the deposited gold, so it is possible to increase the film thickness with one plating bath without separately performing gold plating for thickening. is there. In addition, the deposition rate of gold can be stably maintained, and even if the film thickness is increased, the plating film does not become reddish, and the lemon yellow color peculiar to gold can be maintained.
下地がパラジウムの場合、ニッケルや銅の場合と異なり、パラジウムと金は電位差が小さい。そのため、従来の置換型の金めっき浴を用いてパラジウム上に金めっきを行なうと、均一な膜厚が得られず、更に十分な膜厚を得ることもできない。これに対して、本発明の無電解金めっき浴は、パラジウム表面を活性化し、パラジウムを触媒として還元剤により金を析出させることができ、また析出した金を触媒として更に金を析出させることができることから、パラジウム上においても金めっき皮膜の厚膜化が可能である。 When the base is palladium, unlike nickel and copper, palladium and gold have a small potential difference. Therefore, if gold plating is performed on palladium using a conventional substitutional gold plating bath, a uniform film thickness cannot be obtained, and a sufficient film thickness cannot be obtained. On the other hand, the electroless gold plating bath of the present invention can activate the palladium surface, deposit gold with a reducing agent using palladium as a catalyst, and further deposit gold using the deposited gold as a catalyst. Therefore, it is possible to increase the thickness of the gold plating film even on palladium.
本発明の無電解金めっき浴中に含まれるシアン化金塩としては、シアン化金、シアン化金カリウム、シアン化金ナトリウム、シアン化金アンモニウムなどが挙げられるが、特にシアン化金カリウム、シアン化金ナトリウムであることが好ましい。 Examples of the gold cyanide salt contained in the electroless gold plating bath of the present invention include gold cyanide, potassium gold cyanide, sodium gold cyanide, ammonium gold cyanide and the like. Preferably it is sodium hydride.
シアン化金塩の建浴時及び補給後の含有量は、金基準で0.0001〜1モル/Lであることが好ましく、0.001〜0.5モル/Lであることがより好ましい。上記範囲未満であると析出速度が低下するおそれがあり、上記範囲を超えると経済的に不利となる場合がある。 The content of the gold cyanide salt at the time of bathing and after replenishment is preferably 0.0001 to 1 mol / L, more preferably 0.001 to 0.5 mol / L, based on gold. If it is less than the above range, the deposition rate may be reduced, and if it exceeds the above range, it may be economically disadvantageous.
本発明の無電解金めっき浴中に含まれる錯化剤としては、無電解めっき浴で用いられている公知の錯化剤を用いることができるが、例えば、リン酸、ホウ酸、クエン酸、グルコン酸、酒石酸、乳酸、リンゴ酸、エチレンジアミン、トリエタノールアミン、エチレンジアミン四酢酸、ニトリロ三酢酸、ジエチレントリアミン五酢酸、ヒドロキシエチルエチレンジアミン三酢酸、トリエチレンテトラミン六酢酸、1,3−プロパンジアミン四酢酸、1,3−ジアミノ−2−ヒドロキシプロパン四酢酸、ヒドロキシエチルイミノ二酢酸、ジヒドロキシルグリシン、グリコールエーテルジアミン四酢酸、ジカルボキシメチルグルタミン酸、ヒドロキシエチリデンニリン酸、エチレンジアミンテトラ(メチレンリン酸)、又はそのアルカリ金属(例えば、ナトリウム、カリウム)塩、アルカリ土類金属塩、アンモニウム塩等が挙げられる。 As the complexing agent contained in the electroless gold plating bath of the present invention, a known complexing agent used in the electroless plating bath can be used. For example, phosphoric acid, boric acid, citric acid, Gluconic acid, tartaric acid, lactic acid, malic acid, ethylenediamine, triethanolamine, ethylenediaminetetraacetic acid, nitrilotriacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, triethylenetetraminehexaacetic acid, 1,3-propanediaminetetraacetic acid, 1 , 3-Diamino-2-hydroxypropanetetraacetic acid, hydroxyethyliminodiacetic acid, dihydroxylglycine, glycol ether diamine tetraacetic acid, dicarboxymethyl glutamic acid, hydroxyethylidene diphosphoric acid, ethylenediamine tetra (methylene phosphoric acid), or an alkali metal thereof (For example, Sodium, potassium) salts, alkaline earth metal salts, ammonium salts and the like.
建浴時及び補給後の錯化剤濃度は0.001〜1モル/Lであることが好ましく、0.01〜0.5モル/Lであることがより好ましい。上記範囲未満であると溶出した金属によって析出速度が低下するおそれがあり、上記範囲を超えると経済的に不利となる場合がある。 The concentration of the complexing agent during the bathing and after replenishment is preferably 0.001 to 1 mol / L, and more preferably 0.01 to 0.5 mol / L. If it is less than the above range, the elution metal may cause a decrease in the deposition rate, and if it exceeds the above range, it may be economically disadvantageous.
本発明の無電解金めっき浴中には、ホルムアルデヒド重亜硫酸塩付加物が含まれる。このホルムアルデヒド重亜硫酸塩付加物としては、具体的にはホルムアルデヒド重亜硫酸ナトリウム、ホルムアルデヒド重亜硫酸カリウム、ホルムアルデヒド重亜硫酸アンモニウム等が挙げられる。 The electroless gold plating bath of the present invention contains formaldehyde bisulfite adduct. Specific examples of the formaldehyde bisulfite adduct include sodium formaldehyde bisulfite, potassium formaldehyde bisulfite, and ammonium formaldehyde bisulfite.
これらのホルムアルデヒド重亜硫酸塩付加物の建浴時及び補給後の濃度は0.0001〜0.5モル/Lであることが好ましく、0.001〜0.3モル/Lであることがより好ましい。上記範囲未満であると下地ニッケルが腐食するおそれがあり、上記範囲を超えると浴が不安定になるおそれがある。 The concentration of these formaldehyde bisulfite adducts during the bath and after replenishment is preferably 0.0001 to 0.5 mol / L, more preferably 0.001 to 0.3 mol / L. . If it is less than the above range, the underlying nickel may corrode, and if it exceeds the above range, the bath may become unstable.
本発明の無電解金めっき浴は、下記一般式(1)又は(2)
R1−NH−C2H4−NH−R2 (1)
R3−(CH2−NH−C2H4−NH−CH2)n−R4 (2)
(式(1)及び(2)中、R1、R2、R3及びR4は−OH、−CH3、−CH2OH、−C2H4OH、−CH2N(CH3)2、−CH2NH(CH2OH)、−CH2NH(C2H4OH)、−C2H4NH(CH2OH)、−C2H4NH(C2H4OH)、−CH2N(CH2OH)2、−CH2N(C2H4OH)2、−C2H4N(CH2OH)2又は−C2H4N(C2H4OH)2を表し、同じであっても異なっていてもよい。nは1〜4の整数である。)
で表されるアミン化合物を含有する。本発明のホルムアルデヒド重亜硫酸塩付加物は、ホルムアルデヒド重亜硫酸塩付加物みでは還元剤として作用せず、このアミン化合物と共存することで還元作用が生じる。
The electroless gold plating bath of the present invention has the following general formula (1) or (2)
R 1 —NH—C 2 H 4 —NH—R 2 (1)
R 3 — (CH 2 —NH—C 2 H 4 —NH—CH 2 ) n —R 4 (2)
(In the formulas (1) and (2), R 1 , R 2 , R 3 and R 4 are —OH, —CH 3 , —CH 2 OH, —C 2 H 4 OH, —CH 2 N (CH 3 ). 2 , —CH 2 NH (CH 2 OH), —CH 2 NH (C 2 H 4 OH), —C 2 H 4 NH (CH 2 OH), —C 2 H 4 NH (C 2 H 4 OH), -CH 2 N (CH 2 OH) 2, -CH 2 N (C 2 H 4 OH) 2, -C 2 H 4 N (CH 2 OH) 2 or -C 2 H 4 N (C 2 H 4 OH) 2 may be the same or different, and n is an integer of 1 to 4.)
The amine compound represented by these is contained. The formaldehyde bisulfite adduct of the present invention does not act as a reducing agent in the formaldehyde bisulfite adduct alone, and a reducing action occurs when it coexists with this amine compound.
建浴時及び補給後のこれらのアミン化合物濃度は0.001〜3モル/Lであることが好ましく、0.01〜1モル/Lであることがより好ましい。上記範囲未満であると析出速度が低下するおそれがあり、上記範囲を超えると浴が不安定になるおそれがある。 The concentration of these amine compounds at the time of bathing and after replenishment is preferably 0.001 to 3 mol / L, and more preferably 0.01 to 1 mol / L. If it is less than the above range, the deposition rate may be reduced, and if it exceeds the above range, the bath may be unstable.
本発明の無電解金めっき浴には、公知の無電解めっきで用いられている安定剤を添加することができる。この安定剤としては、2−メルカプトベンゾチアゾール、2−メルカプトベンゾイミダゾール、メルカプト酢酸、メルカプトコハク酸、チオ硫酸、チオグリコール、チオ尿素、チオリンゴ酸等の硫黄化合物、ベンゾトリアゾール、1,2,4−アミノトリアゾール等の窒素化合物が挙げられる。 A stabilizer used in known electroless plating can be added to the electroless gold plating bath of the present invention. As this stabilizer, 2-mercaptobenzothiazole, 2-mercaptobenzimidazole, mercaptoacetic acid, mercaptosuccinic acid, thiosulfuric acid, thioglycol, thiourea, thiomalic acid and other sulfur compounds, benzotriazole, 1,2,4- Examples thereof include nitrogen compounds such as aminotriazole.
建浴時及び補給後の安定剤濃度は0.0000001〜0.01モル/Lであることが好ましく、0.000001〜0.005モル/Lであることがより好ましい。上記範囲未満であると浴が不安定になるおそれがあり、上記範囲を超えると析出速度が低下するおそれがある。 The concentration of the stabilizer during the bathing and after replenishment is preferably 0.0000001 to 0.01 mol / L, and more preferably 0.000001 to 0.005 mol / L. If it is less than the above range, the bath may become unstable, and if it exceeds the above range, the deposition rate may decrease.
本発明の無電解金めっき浴のpHは、5〜10であることが好ましい。上記範囲未満であると析出速度が低下するおそれがあり、上記範囲を超えると浴が不安定になるおそれがある。pH調整剤としては、公知のめっき浴で使用されている水酸化ナトリウム、水酸化カリウム、アンモニア、硫酸、リン酸、ホウ酸等を使用することができる。 The pH of the electroless gold plating bath of the present invention is preferably 5-10. If it is less than the above range, the deposition rate may be reduced, and if it exceeds the above range, the bath may be unstable. As the pH adjuster, sodium hydroxide, potassium hydroxide, ammonia, sulfuric acid, phosphoric acid, boric acid and the like used in known plating baths can be used.
また、本発明の無電解金めっき浴の使用温度は、70〜90℃であることが好ましい。上記範囲未満であると析出速度が低下するおそれがあり、上記範囲を超えると浴が不安定になるおそれがある。 Moreover, it is preferable that the operating temperature of the electroless gold plating bath of this invention is 70-90 degreeC. If it is less than the above range, the deposition rate may be reduced, and if it exceeds the above range, the bath may be unstable.
本発明においては、上述した無電解金めっき浴は、その浴温度を70〜90℃、特に80℃以上に連続的に保持した場合において、シアン化ナトリウム、シアン化カリウム等のシアン化アルカリ並びに無電解金めっき浴の成分として上記したホルムアルデヒド重亜硫酸塩付加物及びアミン化合物を第1の補給成分として定期的に補給することによって、無電解金めっき浴のめっき能を維持することができる。 In the present invention, the electroless gold plating bath described above has an alkali cyanide such as sodium cyanide and potassium cyanide and electroless gold when the bath temperature is continuously maintained at 70 to 90 ° C., particularly 80 ° C. or higher. By periodically replenishing the above-mentioned formaldehyde bisulfite adduct and amine compound as the first replenishing component as components of the plating bath, the plating ability of the electroless gold plating bath can be maintained.
この場合、シアン化アルカリ、ホルムアルデヒド重亜硫酸塩付加物及びアミン化合物の補給比率が、シアン化アルカリ:ホルムアルデヒド重亜硫酸塩付加物:アミン化合物=0.5〜5:1:0.1〜5(モル比)となるようにこれらの成分を補給することが好ましい。この補給比率を外れた場合、シアン化アルカリが過剰であると金の被覆力が低下し、また、ニッケルが腐食するおそれがあり、過少であると浴分解を加速するおそれがある。ホルムアルデヒド重亜硫酸塩付加物が過剰であると浴分解を加速するおそれがあり、過少であると還元力が低下して、ニッケルが腐食し、また金の被覆力が低下するおそれがある。アミン化合物が過剰であると浴分解を加速するおそれがあり、過少であると還元力が低下して、ニッケルが腐食し、また金の被覆力が低下するおそれがある。この場合、ホルムアルデヒド重亜硫酸塩付加物とアミン化合物とのバランスが特に重要である。 In this case, the replenishment ratio of alkali cyanide, formaldehyde bisulfite adduct and amine compound was alkali cyanide: formaldehyde bisulfite adduct: amine compound = 0.5-5: 1: 0.1-5 (moles). It is preferable to replenish these components so that If the replenishment ratio is deviated, the covering power of gold decreases if the alkali cyanide is excessive, and nickel may corrode, and if it is too small, the bath decomposition may be accelerated. If the formaldehyde bisulfite adduct is excessive, bath decomposition may be accelerated, and if it is too small, the reducing power is reduced, nickel is corroded, and the gold covering power may be reduced. If the amine compound is excessive, the decomposition of the bath may be accelerated. If the amine compound is excessive, the reducing power is reduced, nickel is corroded, and the gold covering power may be reduced. In this case, the balance between the formaldehyde bisulfite adduct and the amine compound is particularly important.
更に、本発明においては、めっき処理により金が消費されためっき浴に対しては、更に、無電解金めっき浴の成分として上記したシアン化金塩、ホルムアルデヒド重亜硫酸塩付加物及びアミン化合物を第2の補給成分として補給することができる。 Further, in the present invention, the above-described gold cyanide salt, formaldehyde bisulfite adduct and amine compound are further added as components of the electroless gold plating bath to the plating bath in which gold is consumed by the plating treatment. It can be replenished as two replenishing components.
この場合、シアン化金塩、ホルムアルデヒド重亜硫酸塩付加物及びアミン化合物の補給比率が、シアン化金塩:ホルムアルデヒド重亜硫酸塩付加物:アミン化合物=1:0.1〜5:0.5〜5(モル比)となるようにこれらの成分を補給することが好ましい。この補給比率を外れた場合、シアン化金塩が過剰であるとコスト的に不利となるおそれがあり、過少であると金濃度が低下し、金皮膜特性が劣化するおそれがある。ホルムアルデヒド重亜硫酸塩付加物が過剰であると浴分解を加速するおそれがあり、過少であると還元力が低下して、ニッケルが腐食し、また金の被覆力が低下するおそれがある。アミン化合物が過剰であると浴分解を加速するおそれがあり、過少であると還元力が低下して、ニッケルが腐食し、また金の被覆力が低下するおそれがある。この場合も、ホルムアルデヒド重亜硫酸塩付加物とアミン化合物とのバランスが特に重要である。 In this case, the replenishment ratio of gold cyanide, formaldehyde bisulfite adduct and amine compound was gold cyanide: formaldehyde bisulfite adduct: amine compound = 1: 0.1 to 5: 0.5 to 5. It is preferable to replenish these components so that (molar ratio). If this replenishment ratio is deviated, an excessive amount of gold cyanide may be disadvantageous in terms of cost, and if it is too small, the gold concentration may decrease and the gold film characteristics may deteriorate. If the formaldehyde bisulfite adduct is excessive, bath decomposition may be accelerated, and if it is too small, the reducing power is reduced, nickel is corroded, and the gold covering power may be reduced. If the amine compound is excessive, the decomposition of the bath may be accelerated. If the amine compound is excessive, the reducing power is reduced, nickel is corroded, and the gold covering power may be reduced. Again, the balance between the formaldehyde bisulfite adduct and the amine compound is particularly important.
また、これら第1及び第2の補給成分による各々の補給においては、ホルムアルデヒド重亜硫酸塩付加物基準で建浴時の濃度の0.1〜5モル%を1時間当り1〜20回に分けて、好ましくは等間隔で補給することが好ましく、更に、ホルムアルデヒド重亜硫酸塩付加物の1回の補給量をめっき浴1L当り2ミリモル以下とすることが好ましい。補給間隔が長くなりすぎると、めっき浴内の組成変化が大きくなり、皮膜特性のバラツキが生じるおそれがある。また、1回の補給量が多くなりすぎると、めっき浴内の組成変化が大きくなり、皮膜特性のバラツキが生じるおそれがある。 Moreover, in each replenishment by these 1st and 2nd replenishment components, 0.1-5 mol% of the density | concentration at the time of a building bath is divided into 1-20 times per hour on the basis of formaldehyde bisulfite adduct. Preferably, it is preferably replenished at regular intervals, and the replenishing amount of the formaldehyde bisulfite adduct is preferably 2 mmol or less per liter of the plating bath. If the replenishment interval is too long, the composition change in the plating bath becomes large, and there is a possibility that variations in film characteristics may occur. Further, if the amount of replenishment at one time is too large, the composition change in the plating bath becomes large, and there is a possibility that variations in film characteristics may occur.
なお、本発明においては、補給するホルムアルデヒド重亜硫酸塩付加物の一部又は全部を、ホルムアルデヒド重亜硫酸塩付加物の代わりに、ホルムアルデヒド重亜硫酸塩付加物と同モル量のホルムアルデヒドで補給することも可能である。ホルムアルデヒド重亜硫酸塩付加物は、めっき浴の温度上昇やめっき処理によって亜硫酸を生成し、生成した亜硫酸は、めっき浴中に蓄積する。めっき浴において亜硫酸は還元剤による反応を抑制するので、めっき浴の分解を防ぐいわゆる安定剤として作用しているが、過剰になると亜硫酸が還元剤による反応を抑制することにより、置換反応の比率が増し、下地ニッケルを腐食させてしまうおそれがある。下地ニッケルが腐食すると、はんだ接合性が低下するなどの不具合が生じるため、補給するホルムアルデヒド重亜硫酸塩付加物の一部又は全部を、ホルムアルデヒド重亜硫酸塩付加物の代わりに、ホルムアルデヒド重亜硫酸付加物と同モル量のホルムアルデヒドとすることで、亜硫酸の過剰による上記不具合を抑えることができる。特に、第1の補給成分においてはホルムアルデヒド重亜硫酸付加物、第2の補給成分においてはホルムアルデヒドを用いることで、補給成分の管理もしやすく、めっき浴中の亜硫酸濃度を好適に維持することができ、浴安定性、はんだ接合性共に良好となるため好適である。 In the present invention, part or all of the formaldehyde bisulfite adduct to be replenished can be supplemented with formaldehyde in the same molar amount as the formaldehyde bisulfite adduct instead of the formaldehyde bisulfite adduct. It is. The formaldehyde bisulfite adduct generates sulfite by increasing the temperature of the plating bath or by plating, and the generated sulfite accumulates in the plating bath. Since sulfurous acid suppresses the reaction caused by the reducing agent in the plating bath, it acts as a so-called stabilizer that prevents the decomposition of the plating bath. This may increase the corrosion of the underlying nickel. Corrosion of the underlying nickel causes problems such as a decrease in solderability, so part or all of the replenished formaldehyde bisulfite adduct is replaced with formaldehyde bisulfite adduct instead of formaldehyde bisulfite adduct. By using the same molar amount of formaldehyde, the above problems due to excessive sulfurous acid can be suppressed. In particular, by using formaldehyde bisulfite adduct in the first replenishing component and formaldehyde in the second replenishing component, it is easy to manage the replenishing component, and the sulfurous acid concentration in the plating bath can be suitably maintained. This is preferable because both bath stability and solderability are improved.
特に、上記第2の補給成分の補給においては、めっき浴への第2の補給成分による建浴時からの金の補給総量が0.2g/L以上、好ましくは0.1g/L以上となった場合において、ホルムアルデヒド重亜硫酸塩付加物の代わりに、ホルムアルデヒド重亜硫酸塩付加物と同モル量のホルムアルデヒドで補給するのが好ましい。 In particular, in the replenishment of the second replenishing component, the total replenishment amount of gold from the time of building bath by the second replenishing component to the plating bath is 0.2 g / L or more, preferably 0.1 g / L or more. In this case, it is preferable to replenish with formaldehyde in the same molar amount as the formaldehyde bisulfite adduct instead of the formaldehyde bisulfite adduct.
本発明の無電解金めっき浴においては、浴中でホルムアルデヒドの重亜硫酸付加物とアミン化合物が共存する事で下記式に示されるようなホルムアルデヒド−アミン複合体が生成し還元剤成分として作用していると考えられる。
ホルムアルデヒドの重亜硫酸付加物+アミン化合物
→還元剤成分(ホルムアルデヒド−アミン複合体)+亜硫酸
浴中においてこの還元剤成分(ホルムアルデヒド−アミン複合体)が消費され、すなわちホルムアルデヒドの重亜硫酸付加物およびアミン化合物が消費されることになる。このとき、消費されたホルムアルデヒドの重亜硫酸付加物およびアミン化合物を補給する必要があるが、ホルムアルデヒドの重亜硫酸付加物に替えてホルムアルデヒドを補給してもよい。この補給に際し、各成分の補給バランスを考慮して補給しないと浴分解、ニッケルの腐食、金の被覆力の低下等の不具合が生じるため、この補給比率を考慮する必要がある。すなわち、ホルムアルデヒドの重亜硫酸付加物:アミン化合物、ホルムアルデヒド:アミン化合物あるいはホルムアルデヒドの重亜硫酸付加物およびホルムアルデヒド:アミン化合物をモル比率においてそれぞれ一定比率で補給する事が重要である。
In the electroless gold plating bath of the present invention, a formaldehyde-amine complex as shown in the following formula is formed by the coexistence of a bisulfite adduct of formaldehyde and an amine compound in the bath, and acts as a reducing agent component. It is thought that there is.
Formaldehyde bisulfite adduct + amine compound → reducing agent component (formaldehyde-amine complex) + this reducing agent component (formaldehyde-amine complex) is consumed in the sulfite bath, ie formaldehyde bisulfite adduct and amine compound Will be consumed. At this time, it is necessary to replenish the spent bisulfite adduct of formaldehyde and the amine compound, but formaldehyde may be replenished instead of the bisulfite adduct of formaldehyde. In this replenishment, if the replenishment balance of each component is not taken into consideration, problems such as bath decomposition, nickel corrosion, and decrease in gold covering power occur, so this replenishment ratio needs to be considered. That is, it is important to replenish formaldehyde bisulfite adduct: amine compound, formaldehyde: amine compound or formaldehyde bisulfite adduct and formaldehyde: amine compound at a fixed molar ratio.
本発明の無電解金めっき浴を用いてめっき処理する際の基体の金属表面(被めっき面)の材質としては、銅、銅合金、ニッケル、ニッケル合金、パラジウム、パラジウム合金などを対象とすることができる。上記ニッケル合金としては、ニッケルーリン合金、ニッケル−ホウ素合金など、パラジウム合金としては、パラジウム−リン合金などを挙げることができる。このような金属表面は、基体自体が金属(合金)であるものの表面の他、基体表面に金属皮膜が形成された該皮膜の表面であってもよい。金属皮膜は、電気めっきにより形成されたもの、無電解めっきにより形成されたもののいずれであってもよいが、ニッケル、ニッケル合金、パラジウム、パラジウム合金の場合、無電解めっきによって形成されたものが一般的である。更に、基体にニッケル又はニッケル合金皮膜を介して形成された、パラジウム又はパラジウム合金皮膜表面を無電解金めっき処理する場合にも好適である。 The material of the metal surface (surface to be plated) of the substrate when plating using the electroless gold plating bath of the present invention is intended for copper, copper alloy, nickel, nickel alloy, palladium, palladium alloy, etc. Can do. Examples of the nickel alloy include a nickel-phosphorus alloy and a nickel-boron alloy, and examples of the palladium alloy include a palladium-phosphorus alloy. Such a metal surface may be the surface of the film in which a metal film is formed on the surface of the substrate in addition to the surface of the substrate itself being a metal (alloy). The metal film may be either one formed by electroplating or one formed by electroless plating, but in the case of nickel, nickel alloy, palladium, palladium alloy, one formed by electroless plating is generally used. Is. Furthermore, it is also suitable when the surface of palladium or palladium alloy film formed on the substrate via nickel or nickel alloy film is subjected to electroless gold plating.
本発明の無電解金めっき浴は、例えば、ENIG(Electroless Nickel Immersion Gold)、即ち、(銅上に形成された)下地無電解ニッケルめっき皮膜上に金めっき皮膜を形成する方法、DIG(Direct Immersion Gold)、即ち、銅上に直接金めっき皮膜を形成する方法、ENEPIG(Electroless Nickel Electroless Palladium Immersion Gold)、即ち、(銅上に形成された)下地無電解ニッケルめっき皮膜上に無電解パラジウムめっき皮膜を介して金めっき皮膜を形成する方法のいずれの金めっき皮膜の形成にも用いることが可能である。 The electroless gold plating bath of the present invention is, for example, ENIG (Electroless Nickel Immersion Gold), that is, a method of forming a gold plating film on a base electroless nickel plating film (formed on copper), DIG (Direct Immersion Gold), a method of forming a gold plating film directly on copper, ENEPIG (Electroless Nickel Electroless Palladium Immersion Gold), ie, an electroless palladium plating film on a base electroless nickel plating film (formed on copper) It can be used for forming any gold plating film in the method of forming a gold plating film through the film.
本発明の無電解金めっき浴及びこれを用いた無電解金めっき方法は、例えばプリント配線基板やICパッケージ等の電子部品の配線回路実装部分や端子部分を金めっき処理する場合に好適であり、このような金めっき処理において、本発明の無電解金めっき浴のめっき能の維持管理方法を好適に適用し得る。 The electroless gold plating bath of the present invention and the electroless gold plating method using the same are suitable when, for example, a wiring circuit mounting portion or a terminal portion of an electronic component such as a printed wiring board or an IC package is subjected to gold plating treatment, In such gold plating treatment, the method for maintaining and managing the plating ability of the electroless gold plating bath of the present invention can be suitably applied.
なお、本発明のめっき浴は金属表面(被めっき面)が銅の場合でも良好な皮膜が得られ、下地が銅の場合、銅の酸化、拡散が抑制され良好なはんだ接合特性が得られる。また、厚膜化することで、ワイヤボンディングにも使用可能である。また、本発明のめっき浴は、パラジウム上にも良好な金皮膜を析出させることができるため、鉛フリーはんだ接合やワイヤボンディングへの利用に最適である。 The plating bath of the present invention provides a good film even when the metal surface (surface to be plated) is copper. When the base is copper, oxidation and diffusion of copper are suppressed and good solder joint characteristics are obtained. Further, by increasing the film thickness, it can be used for wire bonding. In addition, the plating bath of the present invention can deposit a good gold film on palladium, and is optimal for use in lead-free solder bonding and wire bonding.
下地がパラジウムの場合、ニッケルや銅の場合と異なり、パラジウムと金は電位差が小さい。そのため、従来の置換型の金めっき浴を用いてパラジウム上に金めっきを行なうと、均一な膜厚が得られず、更に十分な膜厚を得ることもできない。これに対して、本発明の無電解金めっき浴は、パラジウム表面を活性化し、パラジウムを触媒として還元剤により金を析出させることができ、また析出した金を触媒として更に金を析出させることができることから、パラジウム上においても金めっき皮膜の厚膜化が可能である。 When the base is palladium, unlike nickel and copper, palladium and gold have a small potential difference. Therefore, if gold plating is performed on palladium using a conventional substitutional gold plating bath, a uniform film thickness cannot be obtained, and a sufficient film thickness cannot be obtained. On the other hand, the electroless gold plating bath of the present invention can activate the palladium surface, deposit gold with a reducing agent using palladium as a catalyst, and further deposit gold using the deposited gold as a catalyst. Therefore, it is possible to increase the thickness of the gold plating film even on palladium.
以下、実施例及び比較例を挙げて本発明を具体的に説明するが、本発明は下記実施例に限定されるものではない。 EXAMPLES Hereinafter, although an Example and a comparative example are given and this invention is demonstrated concretely, this invention is not limited to the following Example.
[実施例1,2、比較例1]
表1に表される金めっき浴を建浴時のめっき浴とし、これを80℃で保持し、定期的に表2に示される比率の第1の補給成分を補給し(実施例1,2)又は補給せずに(比較例1)、100時間保持した。めっき液の状態を目視により浴分解の兆候である容器への金の析出の有無を確認し、析出が無い場合はニッケル/金プロセスとして表6に示される処理を施した銅張りプリント基板上にそれぞれの金めっき浴に浸漬して、金めっきを施しめっき外観を確認した結果を表3に示す。補給は、1時間あたりのシアン化カリウムの補給量を15mg/Lとし、補給成分を上記比率で1時間に5回に分けて、12分毎に補給した。
[Examples 1 and 2 and Comparative Example 1]
The gold plating bath shown in Table 1 is used as a plating bath during the building bath, and this is maintained at 80 ° C., and the first supplemental component in the ratio shown in Table 2 is periodically replenished (Examples 1 and 2). ) Or without replenishment (Comparative Example 1) and held for 100 hours. The state of the plating solution is visually checked for the presence or absence of gold deposition on the container, which is a sign of bath decomposition. If there is no deposition, the nickel / gold process is performed on a copper-clad printed board subjected to the treatment shown in Table 6 Table 3 shows the results of immersing in each gold plating bath, applying gold plating, and confirming the plating appearance. The replenishment amount was 15 mg / L per hour, and the replenishment component was replenished every 12 minutes by dividing the replenishment component into 5 times per hour at the above ratio.
[実施例3,4]
実施例1の条件でランニングを行い、実施例1で示した第1の補給成分に加えて、更に、表4に示される第2の補給成分を、金が0.1g/L消費する毎に、1回当りのシアン化金カリウムの補給量を0.15g/Lとして、上記比率で補給した。金を0.5g/L補給する毎にニッケル/金プロセスとして表6に示される処理を施した銅張りプリント基板上にそれぞれの金めっき浴に浸漬して、金めっきを施した。得られた金めっき皮膜を上村工業製金剥離剤コプキアリップにより金を剥離し、金剥離後のニッケル表面における腐食の有無を表5に示す。
[Examples 3 and 4]
The running was performed under the conditions of Example 1, and in addition to the first supplemental component shown in Example 1, the second supplemental component shown in Table 4 was consumed every time 0.1 g / L of gold was consumed. The replenishment amount of potassium gold cyanide per time was set to 0.15 g / L and replenished at the above ratio. Each time gold was supplied at a rate of 0.5 g / L, it was immersed in each gold plating bath on a copper-clad printed board that had been subjected to the treatment shown in Table 6 as a nickel / gold process, and gold plating was performed. Table 5 shows the presence or absence of corrosion on the nickel surface after the gold was peeled off from the obtained gold plating film by Uemura Kogyo gold release agent Coppia Lip.
△:金剥離後のニッケル表面に僅かに腐食あり
×:金剥離後のニッケル表面に明らかな腐食あり
Δ: Slight corrosion on the nickel surface after gold peeling ×: Clear corrosion on the nickel surface after gold peeling
実施例3においては、ホルムアルデヒド重亜硫酸ソーダの代わりに同モル量のホルムアルデヒドにより補給することで、亜硫酸が過剰生成することがないため金剥離後のニッケル表面には腐食が無く良好であるが、一方の実施例4においては、金補給総量1g/Lを過ぎたあたりから、亜硫酸が過剰生成したことによると考えられる金剥離後のニッケル表面の腐食が生じる。 In Example 3, replenishment with the same molar amount of formaldehyde instead of formaldehyde sodium bisulfite, so that sulfurous acid is not excessively produced, so that the nickel surface after gold peeling has no corrosion and is good. In Example 4, the nickel surface after gold peeling, which is thought to be due to the excessive generation of sulfurous acid, occurs after the total amount of gold replenishment exceeds 1 g / L.
Claims (8)
R1−NH−C2H4−NH−R2 (1)
R3−(CH2−NH−C2H4−NH−CH2)n−R4 (2)
(式(1)及び(2)中、R1、R2、R3及びR4は−OH、−CH3、−CH2OH、−C2H4OH、−CH2N(CH3)2、−CH2NH(CH2OH)、−CH2NH(C2H4OH)、−C2H4NH(CH2OH)、−C2H4NH(C2H4OH)、−CH2N(CH2OH)2、−CH2N(C2H4OH)2、−C2H4N(CH2OH)2又は−C2H4N(C2H4OH)2を表わし、同じであっても異なっていてもよい。nは1〜4の整数である。)
で表されるアミン化合物を含有する無電解金めっき浴を70〜90℃に保持した状態で上記無電解金めっき浴のめっき能を安定に維持管理する方法であって、シアン化アルカリ並びに上記ホルムアルデヒド重亜硫酸塩付加物及びアミン化合物を第1の補給成分として定期的に補給することを特徴とする無電解金めっき浴のめっき能維持管理方法。 Gold cyanide, complexing agent, formaldehyde bisulfite adduct, and the following general formula (1) or (2)
R 1 —NH—C 2 H 4 —NH—R 2 (1)
R 3 — (CH 2 —NH—C 2 H 4 —NH—CH 2 ) n —R 4 (2)
(In the formulas (1) and (2), R 1 , R 2 , R 3 and R 4 are —OH, —CH 3 , —CH 2 OH, —C 2 H 4 OH, —CH 2 N (CH 3 ). 2 , —CH 2 NH (CH 2 OH), —CH 2 NH (C 2 H 4 OH), —C 2 H 4 NH (CH 2 OH), —C 2 H 4 NH (C 2 H 4 OH), -CH 2 N (CH 2 OH) 2, -CH 2 N (C 2 H 4 OH) 2, -C 2 H 4 N (CH 2 OH) 2 or -C 2 H 4 N (C 2 H 4 OH) 2 represents the same or different, and n is an integer of 1 to 4.)
A method for stably maintaining and managing the plating performance of the electroless gold plating bath while maintaining the electroless gold plating bath containing the amine compound represented by A plating capacity maintenance and management method for an electroless gold plating bath, wherein a bisulfite adduct and an amine compound are periodically replenished as a first replenishing component.
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JP2008174774A (en) * | 2007-01-17 | 2008-07-31 | Okuno Chem Ind Co Ltd | Reduced deposition electroless gold plating solution for palladium films |
JPWO2009142126A1 (en) * | 2008-05-21 | 2011-09-29 | 日本高純度化学株式会社 | Catalyst application liquid for solder plating |
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