JP2008134673A - Liquid crystal display device and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve a problem of decrease in a voltage applied to a liquid crystal (problem of voltage loss) in a liquid crystal display device using an enhanced reflection film comprising a dielectric multilayered film. <P>SOLUTION: The problem of voltage loss is solved by decreasing the number of layers in a dielectric multilayered film to two (including a first dielectric film 105 and a second dielectric film 106), the multilayered film being on a metal film electrically connected to a switching element, and by making the film thickness of the first dielectric film 105 smaller than the film thickness of the second dielectric film 106. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a configuration of a display device (referred to as a liquid crystal display device or an LCD) using a liquid crystal as a display body. In particular, the technique relates to the structure of an electrode for applying a predetermined voltage to liquid crystal.

  A CRT is the most common display device. However, the CRT has a large volume, weight, and power consumption, and is not particularly suitable for a display device with a large area. Therefore, in recent years, a liquid crystal display device (hereinafter referred to as a liquid crystal panel) that is advantageous in terms of weight reduction, low power consumption, and large screen as compared with a CRT has attracted attention.

  There are various driving methods depending on the type of liquid crystal used in the liquid crystal panel, but driving methods using the birefringence of liquid crystals are known. This is a driving method in which the liquid crystal substance utilizes the property that the dielectric constant differs between the major axis direction and the minor axis direction of the molecular axis, and controls the polarization and transmission amount of light, and further the scattering amount. As the liquid crystal material, nematic liquid crystal, ferroelectric liquid crystal, anti-ferroelectric liquid crystal, or the like is used.

  In particular, recently, development of a liquid crystal panel in which a plurality of thin film transistors (TFTs) using a thin film semiconductor are formed on a glass substrate and a circuit is assembled with the TFTs is rapidly progressing. Such a liquid crystal panel is particularly called an active matrix type liquid crystal panel.

  The active matrix liquid crystal panel display methods are roughly classified into a transmission type and a reflection type. In a reflection type liquid crystal panel, light transmitted through a liquid crystal layer is reflected by a pixel electrode provided in each pixel, and the reflected light (light including image information) enters a user's eyes to view an image. it can.

  Such a reflection type liquid crystal panel (hereinafter referred to as a reflection type LCD) has an advantage that the effective pixel area is wider than that of the transmission type liquid crystal panel. This is because the aperture ratio is not limited as in a transmissive liquid crystal panel. Therefore, the reflective type can display brighter than the transmissive type.

  However, it is said that the reflective LCD has a larger optical loss than the transmissive LCD. Therefore, the biggest problem of the reflective LCD is how to effectively use the incident light. That is, in order to perform brighter display, it is indispensable to use as much light as possible and reduce light loss.

  For these reasons, it is desirable that the reflectance of the pixel electrode be as high as possible. This is because if the reflectance is low, the light use efficiency is extremely reduced, and the entire display becomes dark. Moreover, even if the light intensity of the backlight is increased to make the display brighter, measures for increasing the power consumption and the problem of heat generation will eventually lead to an increase in cost.

  In order to reduce such light loss, a highly reflective aluminum-based material (pure aluminum, an aluminum alloy, or aluminum containing impurities) is used as the pixel electrode of the reflective LCD. The silver electrode has a feature that the reflectance is higher, but since the workability is difficult, an aluminum-based material that is relatively easy to handle is often used.

  However, as a result of investigation by the present applicant, the reflectance is higher in the state where a high refractive index material such as an alignment film is formed on the electrode surface, compared with the case where light is directly applied to the electrode formed of an aluminum-based material. It was found that it would drop significantly.

  As described above, even if a material having a high reflectance is selected as the pixel electrode, the reflectance is impaired due to other factors. Therefore, further improvements are desired to improve the reflectance.

  The present invention provides means for solving such problems. That is, a technique for improving the light reflectance of a pixel electrode and improving the utilization efficiency of light incident on a reflective LCD is disclosed.

  It is another object of the present invention to realize a low-cost, bright liquid crystal panel with low power consumption, and further to realize an electronic device in which such a liquid crystal panel is mounted as a display display.

  The gist of the present invention is to amplify the reflected light by effectively forming the reflection light by forming an increased reflection film made of a dielectric multilayer film on the pixel electrode in the reflective liquid crystal panel.

  A dielectric mirror is known as a technique that uses the effect of increasing the reflection of the dielectric multilayer film. However, the dielectric mirror is mostly formed by stacking eight or more layers, and is formed by the dielectric mirror. The directly connected capacity that was made was very small.

In an actual liquid crystal panel, the dielectric multilayer film by volume and (C _d), because the combined capacitance by the liquid crystal and the orientation film (C _lc) and are connected in series, the total capacitance and C _total,
1 / C _total = 1 / C _d + 1 / C _lc
The relationship holds.

Further, when the voltage applied to the combined capacitance is V _total : the voltage applied to the liquid crystal and the alignment film is V _lc : the voltage applied to the dielectric multilayer film is V _d ,
C _total V _total = C _d V _d = C _lc V _lc
It is expressed. When this is transformed and the voltage applied to the liquid crystal is obtained,
V _lc = C _d V _total / (C _lc + C _d )
It becomes. In other words, if the capacitance formed by the dielectric multilayer film is small, the voltage applied to the liquid crystal becomes small.

  However, in the present invention, since a dielectric multilayer film is used as an electrode, the number of laminated layers is very small, such as two or four layers. That is, since the capacity of the dielectric multilayer film is larger than the capacity of the liquid crystal, there is an advantage that the problem that the voltage applied to the liquid crystal is small does not occur.

Further, when the liquid crystal display device is driven in an active matrix, the dielectric multilayer film is provided when the peak voltage of the liquid crystal cell not provided with the dielectric multilayer film is V _{LC, peak} and the withstand voltage of the switching element such as TFT is V _max . In order to drive the liquid crystal cell within the withstand voltage of the TFT, the number and thickness of the dielectric multilayer film should be adjusted so that V _{LC, peak} ≦ C _d V _max / (C _lc + C _d ). is there.

Here, the peak voltage (V _{LC, peak} ) indicates the threshold characteristics of a liquid crystal cell without a dielectric multilayer film, that is, the voltage (V) applied to the liquid crystal cell and the brightness (T) of the liquid crystal cell. In the VT curve, when the maximum value of brightness is 100% and the minimum value is 0%, the voltage indicates 100% brightness in the normally black mode and 0% brightness in the normally white mode.

  By implementing the present invention, it has become possible to greatly improve the reflectance of pixel electrodes using aluminum-based materials. In addition, the reflected light showed a flat characteristic such that the reflected light was almost constant in the visible light region having a wavelength of 400 to 700 nm.

  In particular, in the case of providing an increased reflection film formed by stacking two dielectric films, the flatness of reflected light is good, and the film thickness of the increased reflection film itself can be reduced, so that the voltage loss of the liquid crystal is reduced. I was able to suppress it as much as possible.

  In addition, the structure in which the dielectric films are stacked in four layers has a higher average reflectivity than the two-layer structure, but tends to increase the wavelength dependence. A flat reflection characteristic with less wavelength dependency was obtained.

  As described above, a liquid crystal display device having a pixel electrode with a reflectance of 91% or more (preferably 93% or more) is manufactured using a highly versatile aluminum-based material without using a silver electrode that is difficult to process. Thus, a liquid crystal display device can be obtained at low cost.

  Further, by improving the light reflectivity of the pixel electrode and making effective use of light, a bright display can be achieved even if the output of the backlight is suppressed. That is, the power consumption of the backlight can be reduced, and a liquid crystal display device with high cost performance can be realized.

  Furthermore, it has become possible to improve the contrast and brightness of an electronic device (specifically, a liquid crystal projector or the like) equipped with such a liquid crystal display device as a display display.

  An embodiment of the present invention will be described with reference to FIG. FIG. 1 shows a cross-sectional structure of a pixel of an active matrix substrate (a substrate in which a circuit is configured with TFTs) constituting a reflective LCD.

  In FIG. 1, 101 is a substrate having an insulating surface, and 102 is a TFT formed by a known means. The TFT 102 can be easily manufactured by using the technique described in Japanese Patent Application Laid-Open No. 7-135318 by the present applicant.

  The TFT 102 is covered with a planarization film 103, and a pixel electrode 104 connected to the TFT 102 through a contact hole is formed thereon. The pixel electrode 104 is preferably made of a highly reflective material, specifically an aluminum-based material. Of course, other metal films (silver, tantalum, chromium, etc.) may be used.

  After the pixel electrode 104 is formed, a first dielectric film 105 is formed. The first dielectric film 105 is made of a material having a low refractive index of about 1.2 to 1.6. Specific examples include acrylic, polyimide, magnesium fluoride, silicon dioxide, and the like.

  A second dielectric film 106 is stacked on the first dielectric film 105. The second dielectric film 106 is made of a material having a higher refractive index than that of the first dielectric film 105, preferably a material having a higher refractive index of 1.8 to 2.5. Specific examples include titanium dioxide, zirconia, ITO (indium tin oxide), silicon nitride, and cerium dioxide.

  As a method for forming the dielectric film, a vapor phase method such as a low pressure thermal CVD method, a plasma CVD method, a sputtering method, or a vapor deposition method may be used, but it is also effective to use a spin coating method by solution coating. . When the spin coating method is used, there is an advantage that the step due to the pixel electrode is relaxed and the entire dielectric multilayer film can be flattened.

At this time, the refractive index of the first dielectric film 105 (n _L) and the refractive index (n _H) as the difference between the large high reflectance of the second dielectric film 106 is obtained. This is also clear from the formula for calculating the reflectance of the dielectric multilayer film shown in the following formula.

According to the above equations, the difference between the refractive index (n _H) of the first dielectric refractive index of the film 105 (n _L) and the second dielectric film 106 is large, n _L / n _H decreases Therefore, it can be seen that the reflectance (R) is close to 1, that is, close to total reflection.

  Further, the first dielectric film 105 and the second dielectric film 106 need to have a relationship between the refractive index and the film thickness so as to satisfy the increased reflection condition of the thin film. The condition for increasing the reflection of the thin film is a condition in which the light reflected on the surface of the thin film and the light transmitted through the thin film and then reflected on the surface of the thin film strengthen each other, and are given by

  In this equation, n is the refractive index of the thin film, d is the thickness of the thin film, and λ is the center wavelength of light incident on the thin film. The center wavelength means the peak wavelength of light that can be increased in reflection. In this way, when the optical film thickness (refractive index × film thickness) of the thin film is set to be 1/4 of the center wavelength (λ) of light, the thin film is called a λ / 4 film.

  That is, if the center wavelength and refractive index of incident light are determined, the optimum film thickness is determined from the formula for the increased reflection condition. In other words, assuming that the refractive index is a value unique to the thin film, it is possible to control where the wavelength (center wavelength) at which the reflectance is highest is set by the film thickness of the dielectric film.

  Where to set the center wavelength (λ) satisfying this increased reflection condition is important because it greatly affects the wavelength dependence of the reflected light reflected by the pixel electrode.

  For example, when the reflective LCD of the present invention is applied to a single-panel projector that performs color display by providing a color filter on a single liquid crystal panel, it reflects in a wide range of visible light (wavelength range of approximately 400 to 700 nm). It is desirable that the rate be approximately constant. By doing so, it is possible to ensure the same reflectance regardless of which color of red, green, and blue is incident.

Further, in FIG. 1, a thin film having a low refractive index (referred to as a low refractive index film, this refractive index is represented by n _L ) and a thin film having a high refractive index (referred to as a high refractive index film, represented by n _H ) 2 layers are illustrated, but a two-layer structure of a low-refractive index film and a high-refractive index film can be used as a set, and the set can be stacked multiple times. It is.

  That is, theoretically increased reflection by evenly stacking even dielectric layers with different refractive indexes such as low refractive index film, high refractive index film, low refractive index film, high refractive index film, etc. Increases effectiveness. Accordingly, considering only the reflection enhancement effect, a higher reflectance can be obtained by increasing the number of laminations.

  However, when the integrated film thickness of the dielectric multilayer film is increased, the capacitance due to the dielectric film is reduced, and as a result, there is an adverse effect (voltage loss due to the dielectric film) that the voltage applied to the liquid crystal is reduced. When this happens, the drive voltage for driving the pixel becomes high, leading to an increase in power consumption.

  This is because the capacitance of the dielectric multilayer film and the capacitance of the liquid crystal are connected in series. In order to increase the voltage applied to the liquid crystal, it is necessary to increase the capacitance formed by the dielectric multilayer film. There is.

  Therefore, it is preferable that the integrated film thickness of the dielectric multilayer film is as thin as possible. Therefore, it is desirable to determine the number of times the dielectric films are stacked in consideration of increasing the reflection enhancement effect and suppressing voltage loss due to the dielectric film.

  According to the simulation results of the present applicant, a sufficient reflection enhancement effect can be obtained even with the simplest structure shown in FIG. Therefore, the configuration of the dielectric multilayer film is a combination of pixel electrode / low refractive index film / high refractive index film, or pixel electrode / low refractive index film / high refractive index film / low refractive index film / high refractive index film. It can be said that the combination of is good.

  The dominant term that has the greatest influence on the voltage loss due to the dielectric film is the loss due to the capacitance formed by the low refractive index film. This is because the low refractive index film inevitably has a smaller relative dielectric constant and the capacity that can be formed tends to be smaller. Therefore, increasing the capacitance due to the low refractive index film works very effectively in suppressing the voltage loss due to the dielectric film.

  In this sense, it is effective to set the center wavelength of the low refractive index film to the short wavelength side and the center wavelength of the high refractive index film to the long wavelength side. This is because with such a configuration, the low refractive index film inevitably has a smaller thickness and acts to increase the capacitance formed by the low refractive index film.

  The present invention having the above-described configuration will be described in more detail with the embodiments described below.

  An embodiment of the present invention will be described. In this embodiment, the case where the present invention is applied to a reflective LCD corresponding to a single-plate projector will be described.

  The reflective LCD of the present embodiment has a configuration in which pixels corresponding to the three primary colors of red, green, and blue are arranged in a region corresponding to a unit pixel. That is, incident light (white light) that has arrived from the light source passes through the color filter, and becomes light having a wavelength corresponding to each color of red, green, and blue, and is incident on a pixel corresponding to each color.

  Therefore, in this embodiment, the pixel electrodes having the same structure must efficiently reflect light of each wavelength of red, green, and blue, and are flat with no wavelength dependency in the visible light region (about 400 to 700 nm). Neat reflection characteristics.

  In this embodiment, the simplest two-layer structure (a structure in which a low-refractive index film and a high-refractive index film are stacked in two layers) is employed in order to suppress the influence of voltage loss due to the dielectric film as much as possible. explain. Since this structure is the structure shown in FIG. 1, FIG. 1 will be used for the description.

  Prior to producing the structure shown in FIG. 1, the present applicant conducted a simulation experiment in advance to examine combinations of dielectric multilayer films. Here, first, the configuration of the present embodiment will be described based on the experimental data.

  In the simulation, the applicant assumed a silicon dioxide film as the first dielectric film 105 (low refractive index film) and set the refractive index to 1.43. A zirconia film is assumed as the second dielectric film 106 (high refractive index film), and the refractive index is set to 2.04.

First, systematic simulations were conducted to determine how much the center wavelength of the first dielectric film 105 and the center wavelength of the second dielectric film 106 are set. In this simulation, the case of n _L = 1.43 and n _H = 2.04 (in the case of n _L / n _H = 0.7) was also examined.

  In this simulation, the condition that the average reflectance (hereinafter simply referred to as average reflectance) in the visible light region (light wavelength range of 400 nm to 700 nm) is 0.91 or more (91% or more) is defined as a border line. Conditions were selected for an average reflectance higher than that.

  The numerical value of 0.91 is the reflectivity of the aluminum film formed by the vapor deposition method, and as long as an aluminum-based material is used, it is difficult to achieve a reflectivity higher than that of the conventional method. In other words, realizing an average reflectance of 0.91 or more is nothing but realizing a high reflectance that could not be achieved by the conventional technology.

  A typical simulation result is shown in FIG. FIG. 2 plots the wavelength on the horizontal axis and the reflectance on the vertical axis.

  FIG. 2A shows the reflectance characteristics when the center wavelength of the high refractive index film is fixed at 650 nm and the center wavelengths of the low refractive index film are changed to 400 nm, 500 nm, 550 nm, and 600 nm. FIG. 2B shows the case where the center wavelength of the high refractive index film is fixed at 600 nm and the center wavelength of the low refractive index film is changed to 400 nm, 450 nm, 500 nm, and 550 nm. ) Is when the center wavelength of the high refractive index film is fixed at 550 nm and the center wavelengths of the low refractive index film are changed to 400 nm, 500 nm, and 550 nm.

  Actually, more data is acquired, but the approximate tendency is the same, and the reflectance tends to decrease as the center wavelength of the low refractive index film is set to the longer wavelength side. That is, it is preferable to set the center wavelength of the low refractive index film to the short wavelength side because higher reflectance can be obtained.

  Here, a summary of the above simulation results is shown in FIGS. 3A and 3B are graphs in which the horizontal axis represents the center wavelength of the low refractive index film, and the vertical axis represents the average reflectance in the visible light region (400 to 700 nm).

  In FIG. 3, one plot represents the average reflectance in the visible light region. That is, it is possible to select an optimum setting condition for the center wavelength by extracting a plot having an average reflectance of 0.91 or more.

In the graphs of FIGS. 3 (A) and 3 (B), when the conditions under which the average reflectance is 0.91 or more are extracted and put together, the following two conditions are obtained.
(1) 350 nm ≦ λ _L ≦ 550 nm, 380 nm ≦ λ _H ≦ 700 nm
(2) 450 nm ≦ λ _L ≦ 650 nm, 300 nm ≦ λ _H ≦ 450 nm
However, λ _L indicates the center wavelength of the low refractive index film, and λ _H indicates the center wavelength of the high refractive index film. If the combination is within the range of (1) or (2), the average reflectance can be 0.91 or more.

It is also possible to realize a higher average reflectance by setting the center wavelength. The condition that the average reflectance in the visible light region is 92% or more is as follows:
_{(1) 400nm ≦ λ L ≦} 500nm, 400nm ≦ λ H ≦ 700nm
(2) 500 nm ≦ λ _L ≦ 600 nm, 300 nm ≦ λ _H ≦ 450 nm
It is obtained from the simulation results. Note that the definitions of λ _L , λ _{H and the} like are as described above, and any one of the conditions (1) or (2) may be satisfied.

Furthermore, the conditions under which the average reflectance is 93% or more are 400 nm ≦ λ _L ≦ 500 nm, 450 nm ≦ λ _H ≦ 700 nm (the definitions of λ _L , λ _{H and the} like are as described above).

  It has also been confirmed that the flatness of the reflection characteristics is better as the average reflectance is higher. In other words, the more the average reflectance is set, the more substantially the same reflectance is obtained in the entire visible light region.

  Actually, once the refractive index and the center wavelength of the dielectric film are determined, the film thickness required for the dielectric film is determined. Therefore, the film thickness can be adjusted to a desired center wavelength. As described above, in the present invention, a desired enhanced reflection film can be formed by controlling the thickness of the dielectric film.

At this time, the thickness of the first dielectric film 105 and the second dielectric film 106 is determined based on the increased reflection condition. That is, when the refractive index of the first dielectric film 105 n _L, the thickness and d _L, the refractive index of the second dielectric film 106 n _H, the film thickness and d _H, λ _L = 4n _The film thickness is adjusted so as to satisfy the relationship of _L d _L , λ _H = 4n _H d _H.

  Therefore, the first dielectric film 105 and the second dielectric are obtained by combining the center wavelength of the low refractive index film and the center wavelength of the high refractive index film within the above-mentioned range, and converting them into film thicknesses according to the above two equations. The film thickness of the film 106 is determined.

  The condition described here is a condition selected by paying attention only to the reflectance. Considering the voltage loss due to the dielectric film in this condition, it is possible to select a more favorable condition. That is, it is effective to increase the capacitance formed by the low refractive index film, in other words, to make the film thickness of the low refractive index film thinner than the film thickness of the high refractive index film.

In this example, a simulation was performed in the case where the refractive index (n _L ) of the low refractive index film was 1.43 and the refractive index (n _H ) of the high refractive index film was 2.04. It is not limited to the combination of rates.

As shown in the above [Equation 1], the reflectivity increases theoretically as n _L / n _H decreases. Therefore, even if the refractive index ratio (n _L / n _H ) is 0.7 or less, the reflectance tends to increase as a whole, so that it falls below the borderline that the average reflectance is 0.91 or more. There is no. That is, it can be said that the above-described setting range of the center wavelength always holds within the condition of n _L / n _H ≦ 0.7.

  In this embodiment, a configuration in which a set of dielectric multilayer films each having a laminated structure of a low refractive index film and a high refractive index film are stacked twice (when a four-layer structure of dielectric films) is described. To do. FIG. 4 is used for the description.

  In FIG. 4A, 401 is a substrate having an insulating surface, and 402 is a TFT formed by a known means. The TFT 402 is covered with a planarization film 403, and a pixel electrode 404 connected to the TFT 402 through a contact hole is provided thereon. In this embodiment, an aluminum film containing 1 wt% titanium is used as the pixel electrode 404. Of course, it is not necessary to be limited to this material.

  In this embodiment, a first dielectric film 405 (low refractive index film), a second dielectric film 406 (high refractive index film), and a third dielectric film 407 (low refractive index film) are formed on the pixel electrode 404. ) And a fourth dielectric film 408 (high refractive index film). A material having a low refractive index of about 1.2 to 1.6 was used for the first and third dielectric films, and a material having a high refractive index of 1.8 to 2.5 was used for the second and fourth dielectric films.

  By the way, in this embodiment, for the sake of convenience, the dielectric multilayer film composed of the first and second dielectric films is referred to as a dielectric (A) 409. A dielectric multilayer film composed of the third and fourth dielectric films is referred to as a dielectric (B) 410. At this time, the dielectric (A) 409 corresponds to the first dielectric film 105 in Example 1, and the dielectric (B) 410 corresponds to the second dielectric film 106. It ’s fine.

In this embodiment, the first dielectric film 405 and the second dielectric film 406 are set to the same center wavelength (corresponding to the center wavelength λ _A of the dielectric (A) 409), and the third dielectric film 407 is set. The fourth dielectric film 408 is set to the same center wavelength (corresponding to the center wavelength λ _B of the dielectric (B) 410). Then, a simulation was performed in which the center wavelengths of both were combined widely in the visible light region, and the optimum increased reflection condition was obtained.

  Note that the combination of the refractive index and the center wavelength is schematically shown in FIG. As shown in FIG. 4B, a low refractive index film and a high refractive index film are alternately formed on the metal film 411 (pixel electrode). Here, (low) means a low refractive index film, and (high) means a high refractive index film.

  A typical simulation result when the structure of this embodiment is adopted is shown in FIG. 5A to 5E are graphs in which the horizontal axis represents wavelength and the vertical axis represents reflectance, and the center wavelength of the dielectric (A) is fixed to 400 nm, 500 nm, 550 nm, 600 nm, and 650 nm. For each, the case where the center wavelength of the dielectric (B) is changed is shown. In the figure, the curve drawn with a solid line or a dotted line shows the reflectance characteristic corresponding to each center wavelength of the dielectric (B).

  Actually, more data has been acquired, but the general trend is the same, and the reflectivity increases as the center wavelength of the dielectric (A) and the center wavelength of the dielectric (B) are set to the longer wavelength side. There is a tendency that the wavelength range in which the wavelength decreases decreases to the longer wavelength side.

  Next, FIG. 6 shows a summary of the simulation results described above. In FIG. 6, the horizontal axis represents the center wavelength of the dielectric (B) 410, the vertical axis represents the average reflectance in the visible light region, and the center wavelength of the dielectric (A) 409 was varied in the range of 400 to 650 nm. The time data is plotted. The refractive index was 1.43 for the low refractive index film and 2.04 for the high refractive index film, as in Example 1.

From FIG. 6, the applicant has the following conditions for the average reflectance in the visible light region to be 0.91 or more: 400 nm ≦ λ _A ≦ 570 nm, 400 nm ≦ λ _B ≦ 800 nm (where λ _A is the center of the dielectric (A)) The wavelength, λ _B is the center wavelength of the dielectric (B). Furthermore, the conditions under which the average reflectance is 0.93 or more are 400 nm ≦ λ _A ≦ 500 nm and 600 nm ≦ λ _B ≦ 700 nm (where λ _A and λ _B are defined as described above).

Therefore, the refractive index of the first and third dielectrics is n _L , the refractive index of the second and fourth dielectric films is n _H, and the first, second, third, and fourth dielectric films When the film thicknesses are d ₁ , d ₂ , d ₃ and d ₄ , the film thicknesses of the first, second, third and fourth dielectric films are 400 nm ≦ λ _A ≦ 570 and 400 nm ≦ λ _{B, respectively.} ≦ 800 or 400 nm ≦ λ _A ≦ 500 nm, 600 nm ≦ λ _B ≦ 700 nm (where λ _A = 4 n _L d ₁ = 4 n _H d ₂ , λ _B = 4 n _L d ₃ = 4 n _H d ₄ ) The

  Within the above range, a pixel having a high average reflectance of 0.91 or more (preferably 0.93 or more) can be obtained by appropriately setting the center wavelengths of the dielectric film (A) 409 and the dielectric film (B) 410. An electrode can be formed.

  In practice, as in the first embodiment, the film thickness of the dielectric film composed of the low refractive index film and the high refractive index film is controlled to be adjusted to a desired center wavelength, thereby increasing the reflection of the structure as described above. A film is formed.

As in Example 1, a combination in which the ratio (n _L / n _H ) between the refractive index (n _L ) of the low refractive index film and the refractive index (n _H ) of the high refractive index film is 0.7 or less. If so, the above-described wavelength ranges are all valid.

  Further, as shown in the first embodiment, it is effective to make the film thickness of the low refractive index film thinner than the film thickness of the high refractive index film in order to prevent the liquid crystal voltage loss due to the dielectric capacitance.

  The pixel structure of this embodiment will be described with reference to FIG. Since the structure is similar to that in FIG. 4, the same reference numerals are used for the same parts as in FIG. In this embodiment, a first dielectric film 701 (low refractive index film), a second dielectric film 702 (high refractive index film), and a third dielectric film 703 (low refractive index film) are formed on the pixel electrode 404. And a fourth dielectric film 704 (high refractive index film).

The first and third dielectric films are made of a material having a low refractive index (n _L ) of about 1.2 to 1.6, and the second and fourth dielectric films have a refractive index (n _H ) of 1.8. Higher materials of ~ 2.5 were used.

  Further, in this embodiment, for convenience of explanation, the dielectric multilayer film made up of the first and second dielectric films is called a dielectric (C) 705, and the dielectric multilayer film made up of the third and fourth dielectric films. Is called a dielectric (D) 706.

In this example, unlike Example 2, a simulation was performed by changing the center wavelength set in the dielectric (C) and the dielectric (D). That is, the center wavelength of the first dielectric film 701 and the third dielectric film 703 (both low refractive index films) is set to the same wavelength (λ _L ), and the second dielectric film 702 and the fourth dielectric film 702 The center wavelength of the dielectric film 704 (both high refractive index films) is set to the same wavelength (λ _H ).

  In this embodiment, low refractive index films having the same refractive index are used as the first and third dielectric films, but different refractive indexes may be used. In the case of the present embodiment, there is no problem as long as a laminated structure of a low refractive index film and a high refractive index film is formed in units of dielectric (C) and dielectric (D).

  With respect to the structure as described above, a simulation was performed in which the center wavelengths of both were combined widely in the visible light region, and the optimum reflection enhancement condition was obtained.

  The combination of refractive indexes is schematically shown in FIG. 7B. As shown in FIG. 7B, low refractive index films and high refractive index films are alternately formed on the metal film 707 (pixel electrode). Of course, (low) means a low refractive index film, and (high) means a high refractive index film.

  Here, a simulation result when the structure of this embodiment is adopted is shown in FIG. 8A to 8C are graphs in which the wavelength is plotted on the horizontal axis and the reflectance is plotted on the vertical axis. When the center wavelength of the high refractive index film is fixed at 550 nm, 600 nm, and 650 nm, the low refractive index is obtained. The case where the center wavelength of the rate film is changed is shown.

  Actually, more data has been acquired, but the general trend is the same.The more the central wavelength of the low refractive index film and the central wavelength of the high refractive index film are set to the longer wavelength side, the more the reflectance becomes. The decreasing wavelength band tends to move to the longer wavelength side.

  Next, FIG. 9 shows a summary of the simulation results described above. In FIG. 9, the horizontal axis represents the center wavelength of the high refractive index film (dielectric films 702 and 704), and the vertical axis represents the average reflectance in the visible light region, and the dielectric of the low refractive index film (701 and 703). Data are plotted when the center wavelength of the film is shaken in the range of 350 to 600 nm. The refractive index was 1.43 for the low refractive index film and 2.04 for the high refractive index film as in Examples 1 and 2.

From FIG. 9, the present applicant has the condition that the average reflectance in the visible light region is 0.91 or more,
_{(1) 500nm ≦ λ L ≦} 550nm, 400nm ≦ λ H ≦ 500nm
(2) 350 nm ≦ λ _L ≦ 500 nm, 500 nm ≦ λ _H ≦ 550 nm
(3) 350 nm ≦ λ _L ≦ 500 nm, 550 nm ≦ λ _H ≦ 750 nm
It was said that. Where λ _L is the center wavelength of the low refractive index film and λ _H is the center wavelength of the high refractive index film. Of course, the center wavelength to be set may be selected so as to satisfy one of the conditions (1), (2), or (3).

Furthermore, the condition that the average reflectance is 0.93 or more is as follows:
(4) 500 nm ≦ λ _L ≦ 525 nm, 400 nm ≦ λ _H ≦ 500 nm
(5) 450 nm ≦ λ _L ≦ 500 nm, 500 nm ≦ λ _H ≦ 550 nm
(6) 400 nm ≦ λ _L ≦ 450 nm, 550 nm ≦ λ _H ≦ 650 nm
(7) 350 nm ≦ λ _L ≦ 400 nm, 600 nm ≦ λ _H ≦ 700 nm
It was said that. However, the definitions of λ _L and λ _H are as described above, and any one of the conditions (4), (5), (6), and (7) may be satisfied.

Therefore, when the center wavelength is selected from the condition range of (1), the film thickness and refractive index of the first and third dielectric films are d _L and n _L , respectively, and the second and fourth dielectric films when each thickness and refractive index and d _H, n _H, the thickness d _H of the first and third film thickness of the dielectric film d _L and the second and fourth dielectric film, 500 nm ≦ _{λ L ≦ 550 nm, 400nm ≦} λ H ≦ 500 nm ( provided that _{λ L = 4n L d L,} λ H = 4n H d H) is adjusted so meet. Of course, the same applies to the other condition ranges (2) to (7).

Within the above range, a pixel electrode having a high average reflectance of 0.91 or more (preferably 0.93 or more) can be formed by appropriately setting the center wavelengths λ _L and λ _H.

  In practice, as in the first embodiment, the film thickness of the dielectric film composed of the low refractive index film and the high refractive index film is controlled to be adjusted to a desired center wavelength, thereby increasing the reflection of the structure as described above. A film is formed.

As in Example 1, a combination in which the ratio (n _L / n _H ) between the refractive index (n _L ) of the low refractive index film and the refractive index (n _H ) of the high refractive index film is 0.7 or less. If so, the above-described wavelength ranges are all valid.

  Further, as shown in the first embodiment, it is effective to make the film thickness of the low refractive index film thinner than the film thickness of the high refractive index film in order to prevent the liquid crystal voltage loss due to the dielectric capacitance.

  When a reflective LCD having the structure of this example was actually manufactured and the reflectance was compared between the case where the present invention was not applied and the case where the invention was not applied, a result as shown in FIG. 10 was obtained. In this embodiment, a material in which 1 wt% titanium is contained in an aluminum film is used as the pixel electrode. The film thickness is 200 nm.

  In addition, a dielectric multilayer film, an alignment film (film thickness 240 nm), a liquid crystal layer (3 μm), an alignment film (240 nm), a transparent conductive film (120 nm), and a glass substrate are provided on the pixel electrode in order from the bottom. The light transmitted through these is reflected by the surface of the pixel electrode. Therefore, the reflectance obtained here is the reflectance including light loss due to the alignment film or the like.

  As shown in FIG. 10, it was confirmed that the reflectance was clearly improved in the structure of the pixel electrode employing the present invention as compared with the structure of only the pixel electrode used as a reference. When the invention of the present application was not adopted, the average reflectance in the visible light region was 80.1%. However, the pixel electrode employing the structure of Example 1 has an average reflectance of 85.5%. The pixel electrode adopting this structure has an average reflectance of 86.8%, and the reflectance can be greatly improved.

  In addition, regarding the reflective LCD, the threshold characteristics of the liquid crystal and the response speed of the liquid crystal were compared. As a result, it was confirmed that the application of the present invention has no effect on the threshold characteristics and response speed of the liquid crystal, and no adverse effect on the electrical characteristics of the liquid crystal occurs.

  Further, when a liquid crystal projector was actually assembled using a reflective LCD employing the structure of this embodiment, brighter display was possible compared to the conventional case, and improvements in luminance and contrast were realized.

  In this embodiment, a case where a spin coating method is used as a method for forming a dielectric film for forming an increased reflection film will be described. In the data shown in Examples 1 to 4, the dielectric film is formed by spin coating.

  When the dielectric film is formed by spin coating, a colloidal solution in which an inorganic solid is dispersed in an organic solvent may be used as the coating solution. The film thickness is determined by the concentration of the solution, the number of rotations during spin coating, the spin time, and the like. Since this condition varies depending on the type of dielectric film to be formed, the practitioner may set it appropriately.

  The applicant used a solution obtained by diluting L-1001 (refractive index 1.43) manufactured by Nissan Chemical to 1/3 and a solution diluted H / 3 (refractive index 2.04) to 1/3. At that time, the coating conditions (spin time and rotation speed) of L-1001 were 1st: 500 rpm, 5 sec, 2nd: 2000 rpm, 20 sec. The application conditions of H-1000 were 1st: 500 rpm, 5 sec, 2nd: 1000 rpm, 20 sec.

  Then, the spin-coated dielectric film was pre-baked at 90 ° C. for 5 minutes, and then post-baked at 250 ° C. for 2 hours. Of course, such a baking process (also called a curing process) is not limited to the conditions of this embodiment. Thus, a dielectric film having a desired refractive index and film thickness was obtained.

  In the present invention, in order to form the dielectric film after forming the pixel electrode (after performing the patterning process for forming the pixel electrode), the dielectric film is formed so as to cover the step formed by the pixel electrode. There must be.

  Therefore, it is very effective to use a spin coat method with high step coverage as in this embodiment. By using the spin coat method, the dielectric film is formed in a state where the step is sufficiently flattened, and the alignment film formed thereon is sufficiently flat. Accordingly, the liquid crystal layer is formed on a flat surface, and the occurrence of disclination due to a step can be prevented.

  When the structure of FIG. 1, FIG. 4, or FIG. 7 is formed according to the configuration of the first to fourth embodiments, an alignment film is formed on the dielectric multilayer film. Further, if an opposing substrate having an opposing electrode and an alignment film is prepared and a liquid crystal material is sealed between the TFT side substrate and the opposing substrate, an active matrix liquid crystal display device having a structure as shown in FIG. 11 is completed. . Since the process of encapsulating the liquid crystal material may be a known cell assembly process, detailed description thereof is omitted.

  In FIG. 11, 11 is a substrate having an insulating surface, 12 is a pixel matrix circuit, 13 is a source driver circuit, 14 is a gate driver circuit, 15 is a counter substrate, 16 is an FPC (flexible printed circuit), and 17 is a signal processing circuit. It is.

  As the signal processing circuit 17, it is possible to form a circuit that performs processing such as a D / A converter, a γ correction circuit, a signal division circuit, or the like that has been substituted for a conventional IC. Of course, it is also possible to provide an IC chip on a glass substrate and perform signal processing on the IC chip.

  Further, in this embodiment, the liquid crystal display device is described as an example, but the present invention is applied to an EL (electroluminescence) display device and an EC (electrochromic) display device as long as it is an active matrix display device. It goes without saying that it is also possible to do.

  The electro-optical device of the present invention is used as a display of various electronic devices. Examples of such an electronic device include a video camera, a still camera, a projector, a projection TV, a head mounted display, a car navigation, a personal computer, a personal digital assistant (mobile computer, mobile phone, etc.), and the like. An example of them is shown in FIG.

  FIG. 12A illustrates a mobile phone, which includes a main body 2001, an audio output unit 2002, an audio input unit 2003, a display device 2004, operation switches 2005, and an antenna 2006. The present invention can be applied to the display device 2004 and the like.

  FIG. 12B illustrates a video camera, which includes a main body 2101, a display device 2102, an audio input portion 2103, operation switches 2104, a battery 2105, and an image receiving portion 2106. The present invention can be applied to the display device 2102.

  FIG. 12C illustrates a mobile computer, which includes a main body 2201, a camera unit 2202, an image receiving unit 2203, operation switches 2204, and a display device 2205. The present invention can be applied to the display device 2205 and the like.

  FIG. 12D illustrates a head mounted display which includes a main body 2301, a display device 2302, and a band portion 2303. The present invention can be applied to the display device 2302.

  FIG. 12E illustrates a rear projector, which includes a main body 2401, a light source 2402, a display device 2403, a polarizing beam splitter 2404, reflectors 2405 and 2406, and a screen 2407. The present invention can be applied to the display device 2403.

  FIG. 12F illustrates a front projector, which includes a main body 2501, a light source 2502, a display device 2503, an optical system 2504, and a screen 2505. The present invention can be applied to the display device 2503.

  As described above, the application range of the present invention is extremely wide and can be applied to electronic devices in various fields.

The figure which shows the pixel structure of a dielectric material 2 layer structure. The figure which shows the reflectance characteristic of a dielectric material 2 layer film. The figure which shows the average reflectance of a dielectric material 2 layer film. The figure which shows the pixel structure of a dielectric material 4 layer structure. The figure which shows the reflectance characteristic of a dielectric material 4 layer structure. The figure which shows the average reflectance of a dielectric material 4 layer structure. The figure which shows the pixel structure of a dielectric material 4 layer structure. The figure which shows the reflectance characteristic of a dielectric material 4 layer structure. The figure which shows the average reflectance of a dielectric material 4 layer structure. The figure which shows the reflectance characteristic of a liquid crystal cell. FIG. 6 illustrates a structure of a liquid crystal display device. FIG. 11 illustrates a structure of an electronic device.

Claims (6)

A metal film electrically connected to the switching element;
A first dielectric film provided on the metal film;
A second dielectric film provided on the first dielectric film,
The first dielectric film has a lower refractive index than the second dielectric film,
The liquid crystal display device, wherein the first dielectric film is thinner than the second dielectric film. A metal film electrically connected to the switching element;
A first dielectric film provided on the metal film;
A second dielectric film provided on the first dielectric film,
The first dielectric film is an acrylic film, a polyimide film, a magnesium fluoride film, or a silicon dioxide film,
The second dielectric film is any of a titanium dioxide film, a zirconia film, an ITO film, a silicon nitride film, or a cerium dioxide film,
The liquid crystal display device, wherein the first dielectric film is thinner than the second dielectric film. In claim 1 or claim 2,
The liquid crystal display device, wherein the metal film is made of an aluminum-based material. Forming a switching element and a metal film electrically connected to the switching element;
Forming a first dielectric film on the metal film;
A second dielectric film having a refractive index larger than that of the first dielectric film and thicker than the first dielectric film is formed on the first dielectric film. A method for manufacturing a liquid crystal display device. Forming a switching element and a metal film electrically connected to the switching element;
On the metal film, a first dielectric film made of an acrylic film, a polyimide film, a magnesium fluoride film, or a silicon dioxide film is formed,
The second dielectric film is formed of any one of a titanium dioxide film, a zirconia film, an ITO film, a silicon nitride film, and a cerium dioxide film on the first dielectric film, and is thicker than the first dielectric film. A method for manufacturing a liquid crystal display device, comprising forming a dielectric film. In claim 1 or claim 2,
The method of manufacturing a liquid crystal display device, wherein the metal film is made of an aluminum-based material.

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