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JP2008089559A - Pressure sensor - Google Patents

Pressure sensor Download PDF

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Publication number
JP2008089559A
JP2008089559A JP2006274178A JP2006274178A JP2008089559A JP 2008089559 A JP2008089559 A JP 2008089559A JP 2006274178 A JP2006274178 A JP 2006274178A JP 2006274178 A JP2006274178 A JP 2006274178A JP 2008089559 A JP2008089559 A JP 2008089559A
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JP
Japan
Prior art keywords
pressure
pressure sensor
detection element
main body
hole
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JP2006274178A
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Japanese (ja)
Inventor
Yasushi Masaki
康史 正木
Naoto Ikegawa
直人 池川
Yoichiro Nakahara
陽一郎 中原
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Panasonic Electric Works Co Ltd
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Matsushita Electric Works Ltd
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Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP2006274178A priority Critical patent/JP2008089559A/en
Priority to US12/441,620 priority patent/US7992445B2/en
Priority to CN200780035468.2A priority patent/CN101517387B/en
Priority to EP07828583A priority patent/EP2056087A4/en
Priority to PCT/JP2007/068837 priority patent/WO2008041607A1/en
Priority to KR1020097005435A priority patent/KR101050334B1/en
Publication of JP2008089559A publication Critical patent/JP2008089559A/en
Pending legal-status Critical Current

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a compact and lightweight pressure sensor. <P>SOLUTION: In the pressure sensor 1 having a pressure detection element 4 mounted in such a way as to block one end of a through hole 5 formed in a protrusion part 3, main body parts (a base part 2 and the protrusion part 3) are constituted as a molded interconnect device which is formed in a prescribed shape by ceramic injection molding and in which conductor patterns 6 are formed in its surface. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、圧力センサに関する。   The present invention relates to a pressure sensor.

従来、パッケージ本体に形成された圧力導入孔としての貫通孔を塞ぐようにセンサチップを取り付けた圧力センサが知られている(例えば、特許文献1)。   Conventionally, a pressure sensor in which a sensor chip is attached so as to close a through hole as a pressure introduction hole formed in a package body is known (for example, Patent Document 1).

特許文献1に開示される圧力センサでは、パッケージ本体にセンサチップがワイヤボンディングによって実装されている。
特開平10−300604号公報
In the pressure sensor disclosed in Patent Document 1, a sensor chip is mounted on a package body by wire bonding.
Japanese Patent Laid-Open No. 10-300604

しかしながら、上記従来の圧力センサでは、ワイヤボンディングによってセンサチップを実装していたため、実装作業が繁雑になる上、ワイヤボンディングを行うためのスペースを確保する必要が生じる分、圧力センサが大型化してしまうという問題があった。   However, in the conventional pressure sensor, since the sensor chip is mounted by wire bonding, the mounting work becomes complicated, and the pressure sensor is increased in size because it is necessary to secure a space for wire bonding. There was a problem.

そこで、本発明は、より小さな圧力センサを得ることを目的とする。   Therefore, an object of the present invention is to obtain a smaller pressure sensor.

請求項1の発明にあっては、本体部に形成された貫通孔の途中または奥側に配置された圧力検出素子を有する圧力センサにおいて、上記本体部を、絶縁性の樹脂材料を所定形状に成形するとともにその表面に導体パターンを形成した立体回路部品として構成し、上記圧力検出素子を上記本体部にフリップチップ実装したことを特徴とする。   In the first aspect of the invention, in the pressure sensor having a pressure detection element disposed in the middle or the back side of the through hole formed in the main body, the main body is formed of an insulating resin material in a predetermined shape. The pressure sensing element is flip-chip mounted on the main body portion, and is formed as a three-dimensional circuit component having a conductor pattern formed on the surface thereof.

請求項2の発明にあっては、上記本体部に、上記圧力検出素子および当該圧力検出素子とは別の素子を、略平行に離間配置させて実装したことを特徴とする。   The invention according to claim 2 is characterized in that the pressure detection element and an element different from the pressure detection element are mounted on the main body portion so as to be spaced apart from each other substantially in parallel.

請求項3の発明にあっては、上記本体部に、相互に略平行な底面と段差面とを有する凹部を形成するとともに、上記貫通孔を当該底面に開口するように形成し、上記底面に上記圧力検出素子を実装するとともに、上記段差面に上記別の素子を実装したことを特徴とする。   In the invention of claim 3, the concave portion having a bottom surface and a step surface that are substantially parallel to each other is formed in the main body portion, and the through hole is formed to open to the bottom surface. The pressure detection element is mounted, and the another element is mounted on the step surface.

請求項4の発明にあっては、上記本体部に凹部を形成するとともに、上記貫通孔を当該凹部の底面に開口するように形成し、上記底面に圧力検出素子を実装し、上記導体パターンを、上記凹部の開口縁部を跨いで凹部の内面と本体部の側壁面とを接続するように形成したことを特徴とする。   In the invention of claim 4, a concave portion is formed in the main body portion, the through hole is formed to open to the bottom surface of the concave portion, a pressure detecting element is mounted on the bottom surface, and the conductor pattern is formed. The inner surface of the concave portion and the side wall surface of the main body portion are connected across the opening edge of the concave portion.

請求項5の発明にあっては、上記凹部を真空封止したことを特徴とする。   The invention according to claim 5 is characterized in that the concave portion is vacuum-sealed.

請求項6の発明にあっては、上記本体部に、上記貫通孔の内周面から当該貫通孔の軸心側に張り出すフランジ部を形成し、上記フランジ部の上記貫通孔の圧力導入開口側の表面に上記圧力検出素子を実装する一方、当該フランジ部の圧力導入開口と反対側の表面に上記別の素子を実装したことを特徴とする。   In the invention of claim 6, a flange portion is formed in the main body portion so as to project from the inner peripheral surface of the through hole to the axial center side of the through hole, and the pressure introducing opening of the through hole of the flange portion While the pressure detecting element is mounted on the surface on the side, the other element is mounted on the surface opposite to the pressure introduction opening of the flange portion.

請求項1の発明によれば、本体部を樹脂製の立体回路部品として構成したため微細な導体パターンが得やすくなる上、圧力検出素子を当該本体部にフリップチップ実装したため、圧力センサをより小型に構成することができる。   According to the first aspect of the present invention, since the main body is configured as a resinous three-dimensional circuit component, it is easy to obtain a fine conductor pattern, and the pressure detection element is flip-chip mounted on the main body, so that the pressure sensor can be made smaller. Can be configured.

請求項2の発明によれば、圧力検出素子と別の素子を一つの圧力センサ内に効率よく集約させることができ、それらの素子を含む回路構成をよりコンパクトに構成することができる。   According to the second aspect of the present invention, the pressure detection element and another element can be efficiently integrated into one pressure sensor, and the circuit configuration including these elements can be configured more compactly.

請求項3の発明によれば、段差付きの凹部の底面と段差面を利用して、圧力検出素子と当該別の素子とを効率よく多段に実装することができ、それらの素子を備える圧力センサを、よりコンパクトな構成として得ることができる。   According to the invention of claim 3, by using the bottom surface and the step surface of the recessed portion with a step, the pressure detection element and the another element can be efficiently mounted in multiple stages, and a pressure sensor including these elements Can be obtained as a more compact configuration.

請求項4の発明によれば、凹部の開口縁部を跨ぐ導体パターンにより、素子の各電極の電位を本体部の側壁面から容易に取り出せるようになる。   According to the fourth aspect of the present invention, the potential of each electrode of the element can be easily taken out from the side wall surface of the main body by the conductor pattern straddling the opening edge of the recess.

請求項5の発明によれば、圧力検出素子の検出側の反対側(背面側)となる凹部を真空封止したため、絶対圧を計測することができるようになる。   According to the fifth aspect of the present invention, since the concave portion on the side opposite to the detection side (back side) of the pressure detection element is vacuum-sealed, the absolute pressure can be measured.

請求項6の発明によれば、貫通孔に設けたフランジ部を利用して、圧力検出素子と当該別の素子とを効率よく多段に実装することができ、それらの素子を備える圧力センサを、よりコンパクトな構成として得ることができる。   According to the invention of claim 6, by using the flange portion provided in the through hole, the pressure detection element and the another element can be efficiently mounted in multiple stages, and a pressure sensor including these elements is provided. It can be obtained as a more compact configuration.

(第1実施形態)図1は、本実施形態にかかる圧力センサの斜視図、図2は、圧力センサを裏面側(圧力検出素子による検出側の反対側)から見た平面図、図3は、図2のIII−III断面図、図4は、図2のIV−IV断面図、図5は、圧力センサを裏面側から見た平面図であって、封止剤による圧力検出素子の封止領域を示す図、図6は、圧力センサを実装した状態を示す側面図である。   (First Embodiment) FIG. 1 is a perspective view of a pressure sensor according to the present embodiment, FIG. 2 is a plan view of the pressure sensor viewed from the back side (opposite side to the detection side by the pressure detection element), and FIG. 2 is a sectional view taken along the line III-III in FIG. 2, FIG. 4 is a sectional view taken along the line IV-IV in FIG. 2, and FIG. 5 is a plan view of the pressure sensor as viewed from the back side. FIG. 6 is a side view showing a state where the pressure sensor is mounted.

本実施形態にかかる圧力センサ1は、略直方体状の外観を呈する基体部2の一平面(シール面)2e上に略円柱状の突起部3を設けた構成を備えている。本実施形態では、これら基体部2および突起部3が本体部に相当する。   The pressure sensor 1 according to the present embodiment has a configuration in which a substantially cylindrical protrusion 3 is provided on one plane (seal surface) 2e of a base 2 having a substantially rectangular parallelepiped appearance. In the present embodiment, the base body 2 and the protrusion 3 correspond to the main body.

本体部(基体部2および突起部3)は、立体回路部品(MID:Molded Interconnect Device)として構成される。本実施形態では、本体部は、基材としての絶縁性の樹脂材料(例えば、ポリアミドやポリフタルアミド等の各種エンジニアリングプラスチック材料)を例えば射出成形等によって所定形状に成形し、その表面に導体パターン6を形成して得ることができ、MIDの公知の各種手法(例えば、UV露光法(サブトラクティブ法、セミアディティブ法、アディティブ法等)、レーザーイメージング法、IVOND法等の1回成形法や、SKW法等の2回成形法等)によって得ることが可能である。   The main body (base 2 and protrusion 3) is configured as a three-dimensional circuit component (MID: Molded Interconnect Device). In the present embodiment, the main body portion is formed by molding an insulating resin material as a base material (for example, various engineering plastic materials such as polyamide and polyphthalamide) into a predetermined shape by, for example, injection molding or the like, and a conductor pattern on the surface. 6 can be obtained, and various known methods of MID (for example, UV exposure method (subtractive method, semi-additive method, additive method, etc.), laser imaging method, one-time molding method such as IVOND method, It can be obtained by a two-time molding method such as the SKW method).

図3に示すように、突起部3の中心部には当該突起部3の軸方向に貫通する貫通孔5が形成されるとともに、その外周部には取付用の雄ねじ3aが形成されている。   As shown in FIG. 3, a through hole 5 that penetrates the projection 3 in the axial direction is formed at the center of the projection 3, and a mounting male screw 3a is formed on the outer periphery thereof.

一方、図3および図4に示すように、基体部2の突起部3が設けられる側の反対側となる部分には、平面視で略矩形状の凹部2aが形成されている。また、突起部3に形成した貫通孔5が、この凹部2aの底面2bのほぼ中央部に開口している。   On the other hand, as shown in FIGS. 3 and 4, a concave portion 2a having a substantially rectangular shape in a plan view is formed on a portion of the base portion 2 on the side opposite to the side where the protruding portion 3 is provided. Further, a through hole 5 formed in the protrusion 3 is opened at a substantially central portion of the bottom surface 2b of the recess 2a.

そして、図3〜図5に示すように、貫通孔5の底面2bでの開口端(貫通孔5の延伸方向の一端)を閉蓋する状態で圧力検出素子4が実装されている。この圧力検出素子4は、単結晶シリコン基板の片面に受圧面を形成したもので、ダイヤフラムや、歪みゲージ、電極等(いずれも図示せず)を備え、ピエゾ抵抗効果によって圧力を電気抵抗に変換するものである。貫通孔5は、圧力導入孔に相当する。   And as shown in FIGS. 3-5, the pressure detection element 4 is mounted in the state which closes the opening end (one end of the extending | stretching direction of the through-hole 5) in the bottom face 2b of the through-hole 5. As shown in FIG. This pressure detecting element 4 is formed by forming a pressure receiving surface on one surface of a single crystal silicon substrate, and includes a diaphragm, a strain gauge, an electrode, etc. (all not shown), and converts pressure into electric resistance by a piezoresistive effect. To do. The through hole 5 corresponds to a pressure introducing hole.

本実施形態では、この圧力検出素子4は、図4に示すように、底面2b上に形成された導体パターン6に対してフリップチップ実装されている。なお、図中、8は導電性接着剤、9はアンダーフィル(樹脂製の絶縁性接着剤)、10は圧力検出素子4の各電極のバンプである。   In the present embodiment, the pressure detection element 4 is flip-chip mounted on the conductor pattern 6 formed on the bottom surface 2b as shown in FIG. In the figure, 8 is a conductive adhesive, 9 is an underfill (resin insulating adhesive), and 10 is a bump of each electrode of the pressure detecting element 4.

このとき、アンダーフィル9は、図5中のAに示すように、圧力検出素子4の外縁に沿って略矩形環状に配置されており、このアンダーフィル9と圧力検出素子4とによって、貫通孔5から凹部2a内への検出対象流体(液体または気体)の進入(漏出)が抑制されている。すなわち、アンダーフィル9は、シール部材としても機能している。また、アンダーフィル9として放熱性の高い材料(例えばシリコン系の樹脂材料)を用いることで、圧力センサ1の耐熱性を高めるとともに、圧力検出素子4の温度による検出誤差を抑制することができる。   At this time, as shown by A in FIG. 5, the underfill 9 is arranged in a substantially rectangular ring shape along the outer edge of the pressure detection element 4, and the underfill 9 and the pressure detection element 4 form a through hole. The entry (leakage) of the detection target fluid (liquid or gas) from 5 into the recess 2a is suppressed. That is, the underfill 9 also functions as a seal member. Further, by using a material with high heat dissipation (for example, a silicon-based resin material) as the underfill 9, it is possible to increase the heat resistance of the pressure sensor 1 and to suppress detection errors due to the temperature of the pressure detection element 4.

導体パターン6は、物理蒸着や、レーザ等の電磁波の照射による不要部の除去、電解メッキ処理による圧膜化等、各種の処理を用いて適宜に形成することができる。   The conductor pattern 6 can be appropriately formed using various processes such as physical vapor deposition, removal of unnecessary portions by irradiation of electromagnetic waves such as laser, and pressure film formation by electrolytic plating.

ここで、導体パターン6は、図2〜図5に示すように、凹部2aの開口縁部2cを跨いで凹部2aの内面と本体部(基体部2)の側壁面2dとを接続するように形成されている。したがって、圧力検出素子4の検出結果を、側壁面2d上に露出した導体パターン6との導通を確立することで容易に取得することができる。   Here, as shown in FIGS. 2 to 5, the conductor pattern 6 connects the inner surface of the concave portion 2 a and the side wall surface 2 d of the main body (base portion 2) across the opening edge 2 c of the concave portion 2 a. Is formed. Therefore, the detection result of the pressure detection element 4 can be easily obtained by establishing conduction with the conductor pattern 6 exposed on the side wall surface 2d.

そして、凹部2aは、平板状の蓋体7によって、突起部3の反対側で閉塞されている。上述したようにアンダーフィル9によるシールを確保しながら圧力検出素子4を実装した後、この蓋体7による閉塞作業を真空チャンバ内で行うことで、凹部2aを真空封止することができ、この場合には、圧力検出素子4によって絶対圧力を検出することが可能となる。なお、真空封止しない場合には、大気圧に対する相対的な圧力(ゲージ圧)が検出されることになる。   The recess 2 a is closed on the opposite side of the protrusion 3 by a flat lid 7. As described above, after mounting the pressure detection element 4 while securing the seal by the underfill 9, the cover 2 is closed in the vacuum chamber, whereby the recess 2a can be vacuum-sealed. In this case, the absolute pressure can be detected by the pressure detection element 4. In addition, when not vacuum-sealing, the relative pressure (gauge pressure) with respect to atmospheric pressure is detected.

上記構成の圧力センサ1は、例えば図6に示すような状態で装備することができる。すなわち、この例では、検出対象となる流体の存在領域21の隔壁20(例えば管壁)に、突起部3の雄ねじ部3aに対応する雌ねじ孔20aが形成されており、この雌ねじ孔20aに突起部3を螺結することで、隔壁20の表面20bと基体部2の突起部3が形成される側の平面2eとで環状のシール部材12(ワッシャ、ガスケット、Oリング等)が挟持され、当該シール部材12によって流体のシールが確保されるようになっている。   The pressure sensor 1 having the above configuration can be equipped in a state as shown in FIG. 6, for example. That is, in this example, a female screw hole 20a corresponding to the male screw portion 3a of the protrusion 3 is formed in the partition wall 20 (for example, a tube wall) of the fluid existence region 21 to be detected, and the protrusion is formed in the female screw hole 20a. By screwing the portion 3, an annular seal member 12 (washer, gasket, O-ring, etc.) is sandwiched between the surface 20 b of the partition wall 20 and the flat surface 2 e on the side where the protrusion 3 of the base portion 2 is formed, The seal member 12 ensures a fluid seal.

以上の本実施形態によれば、本体部を樹脂製の立体回路部品として構成したため微細な導体パターン6が得やすくなる上、圧力検出素子4を当該本体部にフリップチップ実装したため、圧力センサ1をより小型に構成することができる。   According to the above-described embodiment, since the main body portion is configured as a resinous three-dimensional circuit component, a fine conductor pattern 6 is easily obtained, and the pressure detection element 4 is flip-chip mounted on the main body portion. It can be configured more compactly.

また、本実施形態によれば、凹部2aの開口縁部2cを跨ぐ導体パターン6により、圧力検出素子4の各電極の電位を本体部の側壁面2dから容易に取り出せるようになる。   Further, according to the present embodiment, the potential of each electrode of the pressure detection element 4 can be easily taken out from the side wall surface 2d of the main body portion by the conductor pattern 6 straddling the opening edge 2c of the recess 2a.

また、本実施形態において、圧力検出素子4の検出側の反対側(背面側)となる凹部2aを真空封止すれば、絶対圧を計測することができるようになる。   In the present embodiment, the absolute pressure can be measured by vacuum-sealing the concave portion 2a on the side opposite to the detection side (back side) of the pressure detection element 4.

(第2実施形態)図7は、本実施形態にかかる圧力センサの縦断面図(図3に相当する断面図)である。なお、本実施形態にかかる圧力センサ1Aは、上記第1実施形態にかかる圧力センサ1と同様の構成要素を備えている。よって、以下では、それら同様の構成要素については共通の符号を付すとともに、重複する説明を省略する。   (Second Embodiment) FIG. 7 is a longitudinal sectional view (cross-sectional view corresponding to FIG. 3) of a pressure sensor according to this embodiment. In addition, 1 A of pressure sensors concerning this embodiment are provided with the component similar to the pressure sensor 1 concerning the said 1st Embodiment. Therefore, in the following, those similar components are denoted by common reference numerals, and redundant description is omitted.

本実施形態では、基体部2Aに、底面2bと深さ方向の略中央部に形成された段差面2fとを有する段差付きの凹部2aを形成し、底面2bに圧力検出素子4を実装するとともに、段差面2fに圧力検出素子4とは別の素子(例えば、圧力検出素子4からの出力信号を処理(例えばフィルタリング、補正、演算、温度補償等)する回路を含む素子等)を実装したものであり、この点以外は、上記第1実施形態にかかる圧力センサ1と同様の構成を備えている。なお、図7中では省略しているが、この凹部2aの表面にも、図2〜図5に示す導体パターン6と同様の導体パターンが形成されている。   In the present embodiment, a stepped recess 2a having a bottom surface 2b and a step surface 2f formed at a substantially central portion in the depth direction is formed on the base 2A, and the pressure detection element 4 is mounted on the bottom surface 2b. In addition, an element other than the pressure detection element 4 (for example, an element including a circuit that processes an output signal from the pressure detection element 4 (for example, filtering, correction, calculation, temperature compensation, etc.)) is mounted on the step surface 2f. Except for this point, it has the same configuration as the pressure sensor 1 according to the first embodiment. Although omitted in FIG. 7, a conductor pattern similar to the conductor pattern 6 shown in FIGS. 2 to 5 is also formed on the surface of the recess 2a.

かかる構成によれば、基体部2Aに圧力検出素子4および別の素子4Aを略平行に離間配置させて実装することで、一つの圧力センサ1A内に複数の素子4,4Aを効率よく集約させることができるので、それら複数の素子4,4Aを含む回路をよりコンパクトに構成することができる。   According to such a configuration, the pressure detecting element 4 and the other element 4A are mounted on the base portion 2A so as to be spaced apart from each other in substantially parallel, so that the plurality of elements 4 and 4A are efficiently integrated in one pressure sensor 1A. Therefore, the circuit including the plurality of elements 4 and 4A can be configured more compactly.

特に本実施形態では、段差付きの凹部2aの底面2bと段差面2fを利用して、圧力検出素子4と別の素子4Aとを効率よく多段に実装することができ、それら複数の素子4,4Aを備える圧力センサ1Aを、よりコンパクトな構成として得ることができる。   In particular, in the present embodiment, the pressure detection element 4 and another element 4A can be efficiently mounted in multiple stages using the bottom surface 2b and the step surface 2f of the stepped recess 2a. Pressure sensor 1A provided with 4A can be obtained as a more compact configuration.

(第3実施形態)図8は、本実施形態にかかる圧力センサの縦断面図(図3に相当する断面図)である。なお、本実施形態にかかる圧力センサ1Bは、上記第1または第2実施形態にかかる圧力センサ1,1Aと同様の構成要素を備えている。よって、以下では、それら同様の構成要素については共通の符号を付すとともに、重複する説明を省略する。   (Third Embodiment) FIG. 8 is a longitudinal sectional view (cross-sectional view corresponding to FIG. 3) of a pressure sensor according to this embodiment. The pressure sensor 1B according to the present embodiment includes the same components as the pressure sensors 1 and 1A according to the first or second embodiment. Therefore, in the following, those similar components are denoted by common reference numerals, and redundant description is omitted.

本実施形態では、基体部2Bの貫通孔5の内周面から当該貫通孔5の軸心側に張り出す環状のフランジ部13を形成し、当該フランジ部13の貫通孔5の圧力導入開口5b側の表面5aに圧力検出素子4をフリップチップ実装する一方、フランジ部13の圧力導入開口5bと反対側の表面(底面2b)には圧力検出素子4とは別の素子4B(例えば、圧力検出素子4からの出力信号を処理(例えばフィルタリング、補正、演算等)する回路を含む素子等)を実装している。   In the present embodiment, an annular flange portion 13 is formed to project from the inner peripheral surface of the through hole 5 of the base portion 2B to the axial center side of the through hole 5, and the pressure introduction opening 5b of the through hole 5 of the flange portion 13 is formed. The pressure detection element 4 is flip-chip mounted on the surface 5a on the side, while the element 4B (for example, pressure detection) different from the pressure detection element 4 is provided on the surface (bottom surface 2b) opposite to the pressure introduction opening 5b of the flange portion 13. An element including a circuit that processes an output signal from the element 4 (for example, filtering, correction, calculation, etc.) is mounted.

なお、フランジ部13の内側端縁(内周面)14には、圧力検出素子4に導通する導体パターン(図8中では図示せず)が形成され、当該導体パターンは、凹部2a内の導体パターン(図2〜図5に示す導体パターン6と同様のもの)に接続されている。   A conductor pattern (not shown in FIG. 8) that conducts to the pressure detection element 4 is formed on the inner end edge (inner peripheral surface) 14 of the flange portion 13, and the conductor pattern is a conductor in the recess 2a. It is connected to a pattern (similar to the conductor pattern 6 shown in FIGS. 2 to 5).

さらに本実施形態では、上記第2実施形態とほぼ同様に、基体部2Bに、底面2bと深さ方向の略中央部に形成された段差面2fとを有する段差付きの凹部2aが形成されており、段差面2fに圧力検出素子4および素子4Bとは別の素子4Aが実装されている。   Further, in the present embodiment, a stepped concave portion 2a having a bottom surface 2b and a step surface 2f formed at a substantially central portion in the depth direction is formed on the base body portion 2B in substantially the same manner as in the second embodiment. In addition, an element 4A different from the pressure detecting element 4 and the element 4B is mounted on the step surface 2f.

かかる構成によれば、基体部2Bに圧力検出素子4および別の素子4A,4Bを略平行に離間配置させて実装することで、一つの圧力センサ1A内に複数の素子4,4A,4Bを効率よく集約させることができるので、それら複数の素子4,4A,4Bを含む回路をよりコンパクトに構成することができる。   According to such a configuration, the pressure detecting element 4 and the other elements 4A and 4B are mounted on the base portion 2B so as to be spaced apart from each other in substantially parallel, whereby a plurality of elements 4, 4A and 4B are mounted in one pressure sensor 1A. Since they can be efficiently integrated, a circuit including the plurality of elements 4, 4A, 4B can be configured more compactly.

特に貫通孔5に設けたフランジ部13を利用して、圧力検出素子4と別の素子4Bとを効率よく多段に実装することができ、それら複数の素子4,4Bを備える圧力センサ1Bを、よりコンパクトな構成として得ることができる。   In particular, by using the flange portion 13 provided in the through hole 5, the pressure detection element 4 and another element 4B can be efficiently mounted in multiple stages, and the pressure sensor 1B including the plurality of elements 4 and 4B is provided. It can be obtained as a more compact configuration.

以上、本発明の好適な実施形態について説明したが、本発明は上記実施形態に限定されるものではなく、種々の変形が可能である。   The preferred embodiment of the present invention has been described above, but the present invention is not limited to the above embodiment, and various modifications can be made.

例えば、上記実施形態では、突起部に取付用の雄ねじを形成した場合を例示したが、これに替えて、貫通孔の内周面に取付用の雌ねじを形成してもよい。また、突起部を先細のテーパ状としてもよい。   For example, although the case where the male screw for attachment was formed in the projection part was illustrated in the said embodiment, it may replace with this and the female screw for attachment may be formed in the internal peripheral surface of a through-hole. Further, the protruding portion may be tapered.

また、本体部の外表面等に、磁性材料によるコーティングや、導電性材料によるコーティング(例えばカーボンナノチューブとニッケルの複合メッキ等)を施すことにより、外来電磁波による影響(検出誤差の発生やノイズ混入等)を抑制することができる。   In addition, the outer surface of the main body is coated with a magnetic material or a conductive material (for example, composite plating of carbon nanotubes and nickel), so that the effects of external electromagnetic waves (occurrence of detection errors, noise mixing, etc.) ) Can be suppressed.

本発明の実施形態にかかる圧力センサの斜視図。The perspective view of the pressure sensor concerning the embodiment of the present invention. 本発明の第1実施形態にかかる圧力センサを裏面側(圧力検出素子による検出側の反対側)から見た平面図。The top view which looked at the pressure sensor concerning 1st Embodiment of this invention from the back surface side (opposite side of the detection side by a pressure detection element). 図2のIII−III断面図。III-III sectional drawing of FIG. 図2のIV−IV断面図。IV-IV sectional drawing of FIG. 本発明の第1実施形態にかかる圧力センサを裏面側から見た平面図であって、封止剤による圧力検出素子の封止領域を示す図。It is the top view which looked at the pressure sensor concerning 1st Embodiment of this invention from the back surface side, Comprising: The figure which shows the sealing area | region of the pressure detection element by sealing agent. 本発明の第1実施形態にかかる圧力センサを実装した状態を示す側面図(一部断面図)。The side view (partial sectional view) showing the state where the pressure sensor concerning a 1st embodiment of the present invention was mounted. 本発明の第2実施形態にかかる圧力センサの縦断面図。The longitudinal cross-sectional view of the pressure sensor concerning 2nd Embodiment of this invention. 本発明の第3実施形態にかかる圧力センサの縦断面図。The longitudinal cross-sectional view of the pressure sensor concerning 3rd Embodiment of this invention.

符号の説明Explanation of symbols

1,1A,1B 圧力センサ
2,2A,2B 基体部(本体部)
2a 凹部
2b 底面(フランジ部13の圧力導入開口5bと反対側の表面)
2c 開口縁部
2d 側壁面
2f 段差面
3 突起部
4 圧力検出素子
4A,4B 別の素子
5 貫通孔
5a (フランジ部13の)表面
5b 圧力導入開口
6 導体パターン
12 フランジ部
1, 1A, 1B Pressure sensor 2, 2A, 2B Base part (main part)
2a Concave part 2b Bottom surface (surface on the opposite side to the pressure introduction opening 5b of the flange part 13)
2c Opening edge portion 2d Side wall surface 2f Stepped surface 3 Protruding portion 4 Pressure detecting element 4A, 4B Another element 5 Through hole 5a Surface (of flange portion 13) 5b Pressure introducing opening 6 Conductor pattern 12 Flange portion

Claims (6)

本体部に形成された貫通孔の途中または奥側に配置された圧力検出素子を有する圧力センサにおいて、
前記本体部を、絶縁性の樹脂材料を所定形状に成形するとともにその表面に導体パターンを形成した立体回路部品として構成し、
前記圧力検出素子を前記本体部にフリップチップ実装したことを特徴とする圧力センサ。
In the pressure sensor having a pressure detection element arranged in the middle or the back side of the through hole formed in the main body,
The main body is configured as a three-dimensional circuit component in which an insulating resin material is molded into a predetermined shape and a conductor pattern is formed on the surface thereof.
A pressure sensor, wherein the pressure detection element is flip-chip mounted on the main body.
前記本体部に、前記圧力検出素子および当該圧力検出素子とは別の素子を、略平行に離間配置させて実装したことを特徴とする請求項1に記載の圧力センサ。   2. The pressure sensor according to claim 1, wherein the pressure detection element and an element different from the pressure detection element are mounted on the main body portion so as to be spaced apart from each other substantially in parallel. 前記本体部に、相互に略平行な底面と段差面とを有する凹部を形成するとともに、前記貫通孔を当該底面に開口するように形成し、
前記底面に前記圧力検出素子を実装するとともに、前記段差面に前記別の素子を実装したことを特徴とする請求項2に記載の圧力センサ。
In the body portion, a recess having a bottom surface and a step surface that are substantially parallel to each other is formed, and the through hole is formed to open to the bottom surface,
The pressure sensor according to claim 2, wherein the pressure detection element is mounted on the bottom surface, and the another element is mounted on the step surface.
前記本体部に凹部を形成するとともに、前記貫通孔を当該凹部の底面に開口するように形成し、
前記底面に圧力検出素子を実装し、
前記導体パターンを、前記凹部の開口縁部を跨いで凹部の内面と本体部の側壁面とを接続するように形成したことを特徴とする請求項1または2に記載の圧力センサ。
Forming a recess in the main body, and forming the through hole so as to open to the bottom surface of the recess,
A pressure detection element is mounted on the bottom surface,
The pressure sensor according to claim 1, wherein the conductor pattern is formed so as to connect the inner surface of the recess and the side wall surface of the main body across the opening edge of the recess.
前記凹部を真空封止したことを特徴とする請求項3または4に記載の圧力センサ。   The pressure sensor according to claim 3 or 4, wherein the concave portion is vacuum-sealed. 前記本体部に、前記貫通孔の内周面から当該貫通孔の軸心側に張り出すフランジ部を形成し、
前記フランジ部の前記貫通孔の圧力導入開口側の表面に前記圧力検出素子を実装する一方、当該フランジ部の圧力導入開口と反対側の表面に前記別の素子を実装したことを特徴とする請求項2に記載の圧力センサ。
In the main body portion, a flange portion that projects from the inner peripheral surface of the through hole to the axial center side of the through hole is formed,
The pressure detection element is mounted on a surface of the flange portion on the pressure introduction opening side of the through hole, and the other element is mounted on a surface of the flange portion on the opposite side to the pressure introduction opening. Item 3. The pressure sensor according to Item 2.
JP2006274178A 2006-10-02 2006-10-05 Pressure sensor Pending JP2008089559A (en)

Priority Applications (6)

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JP2006274178A JP2008089559A (en) 2006-10-05 2006-10-05 Pressure sensor
US12/441,620 US7992445B2 (en) 2006-10-02 2007-09-27 Pressure sensor
CN200780035468.2A CN101517387B (en) 2006-10-02 2007-09-27 Pressure sensor
EP07828583A EP2056087A4 (en) 2006-10-02 2007-09-27 PRESSURE SENSOR
PCT/JP2007/068837 WO2008041607A1 (en) 2006-10-02 2007-09-27 Pressure sensor
KR1020097005435A KR101050334B1 (en) 2006-10-02 2007-09-27 Pressure sensor

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010190819A (en) * 2009-02-20 2010-09-02 Denso Corp Sensor device
WO2011078043A1 (en) * 2009-12-25 2011-06-30 アルプス電気株式会社 Force sensor and method of manufacturing the same
JP2014522102A (en) * 2011-07-29 2014-08-28 エプコス アクチエンゲゼルシャフト Semiconductor chip housing and semiconductor chip having housing

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04106441A (en) * 1990-08-28 1992-04-08 Toyota Autom Loom Works Ltd Pressure sensor
JPH10104101A (en) * 1996-10-02 1998-04-24 Mitsubishi Electric Corp Semiconductor pressure sensor
JPH10300604A (en) * 1997-04-23 1998-11-13 Matsushita Electric Works Ltd Pressure sensor
JPH11326088A (en) * 1998-05-15 1999-11-26 Hokuriku Electric Ind Co Ltd Pressure sensor and its manufacture
JP2000199725A (en) * 1999-01-06 2000-07-18 Hokuriku Electric Ind Co Ltd Semiconductor pressure sensor device
JP2001311675A (en) * 2000-02-24 2001-11-09 Matsushita Electric Works Ltd Pressure sensor module
JP2003130749A (en) * 2001-10-29 2003-05-08 Matsushita Electric Works Ltd Pressure sensor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04106441A (en) * 1990-08-28 1992-04-08 Toyota Autom Loom Works Ltd Pressure sensor
JPH10104101A (en) * 1996-10-02 1998-04-24 Mitsubishi Electric Corp Semiconductor pressure sensor
JPH10300604A (en) * 1997-04-23 1998-11-13 Matsushita Electric Works Ltd Pressure sensor
JPH11326088A (en) * 1998-05-15 1999-11-26 Hokuriku Electric Ind Co Ltd Pressure sensor and its manufacture
JP2000199725A (en) * 1999-01-06 2000-07-18 Hokuriku Electric Ind Co Ltd Semiconductor pressure sensor device
JP2001311675A (en) * 2000-02-24 2001-11-09 Matsushita Electric Works Ltd Pressure sensor module
JP2003130749A (en) * 2001-10-29 2003-05-08 Matsushita Electric Works Ltd Pressure sensor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010190819A (en) * 2009-02-20 2010-09-02 Denso Corp Sensor device
WO2011078043A1 (en) * 2009-12-25 2011-06-30 アルプス電気株式会社 Force sensor and method of manufacturing the same
US8516906B2 (en) 2009-12-25 2013-08-27 Alps Electric Co., Ltd. Force sensor and method of manufacturing the same
JP5295388B2 (en) * 2009-12-25 2013-09-18 アルプス電気株式会社 Force sensor and manufacturing method thereof
JP2014522102A (en) * 2011-07-29 2014-08-28 エプコス アクチエンゲゼルシャフト Semiconductor chip housing and semiconductor chip having housing
JP2017103464A (en) * 2011-07-29 2017-06-08 エプコス アクチエンゲゼルシャフトEpcos Ag Housing for semiconductor chip and semiconductor chip with housing

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