JP2008039794A - Electro-optical device substrate, electro-optical device, and electronic apparatus - Google Patents

Abstract

High-quality display is performed in an electro-optical device.
A pixel electrode 9a having a second portion 9ab formed in an opening region for each pixel and extending to a non-opening region separating the opening regions from each other, and formed in the non-opening region and connected to the pixel electrode 9a. The lower capacitor electrode 71, the capacitor line 300 formed along the X direction in the non-opening region D1 extending along the X direction, and disposed on the upper layer side of the lower capacitor electrode 71, and the upper layer side of the capacitor line 300. And a relay layer 93 connected to the lower capacitor electrode 71 through the contact hole 84 and connected to the second portion 9ab through the contact hole 85. Further, the contact holes 84 and 85 are arranged so as to be shifted in the Y direction so as not to overlap each other in the non-opening region D1, and the capacitor line 300 has a recess 310 that is cut away so as to avoid the contact hole 84.
[Selection] Figure 6

Description

  The present invention relates to an electro-optical device substrate used in an electro-optical device such as a liquid crystal device, an electro-optical device including the electro-optical device substrate, and a liquid crystal projector including the electro-optical device. The present invention relates to the technical field of electronic equipment.

  In a liquid crystal device which is an example of this type of electro-optical device, for example, as disclosed in Patent Document 1, in order to prevent an image signal held in a pixel portion from leaking, a liquid crystal between a pixel electrode and a counter electrode is used. A storage capacitor is added electrically in parallel with the capacitor. Such a storage capacitor is disposed in a non-opening region that defines an opening region in each of a plurality of pixels constituting the display region of the liquid crystal device, for example, in a rectangular shape, and the pixel electrode is disposed in the opening region. Then, in each pixel on the substrate, the portion formed in the opening area of the pixel electrode extends to the holding capacity of the non-opening area so that the pixel electrode and the holding capacity overlap each other in the non-opening area when seen in a plan view. The pixel electrode and the storage capacitor are electrically connected to each other through the contact hole in the non-opening region.

  Here, in order to secure a high aperture ratio in each pixel while increasing the definition of the device, the following manufacturing process is performed when the wiring width of the wiring in the non-opening region is reduced and the size of the electronic element is reduced. In order to avoid the above complexity, a part of the non-opening region is projected in a convex shape with respect to the opening region to form an overhanging portion, and the contact hole is arranged in the overhanging portion. For example, when the non-opening region is defined by a wiring and a storage capacitor provided between adjacent pixels, if the width of the wiring or the like is reduced and the size of the contact hole is reduced accordingly, for example, the contact hole There is a possibility that the manufacturing process becomes complicated, for example, it becomes difficult to secure a margin for alignment of a mask used for opening.

JP 2005-301306 A

  However, according to the configuration of the contact hole as described above, a part of the non-opening region is formed only for securing the arrangement of the contact hole. There is a technical problem that the image display quality is degraded due to a decrease in the rate.

  Accordingly, the present invention has been made in view of the above problems and the like. For example, an electro-optical device such as a liquid crystal device driven by an active matrix method, which can increase the aperture ratio. It is an object of the present invention to provide a substrate for an electro-optical device, an electro-optical device including the electro-optical device substrate, and an electronic apparatus.

  In order to solve the above problems, a substrate for an electro-optical device according to the present invention is formed in an opening region of each of a plurality of pixels constituting a display region on the substrate and the substrate, and the opening region is separated from each other. A pixel electrode having an extending portion extending in a part of the region; a pixel potential side electrode which is formed in the non-opening region and is electrically connected to the pixel electrode to form a storage capacitor; and the non-opening The first region extending along the first direction of the display region in the region is formed along the first direction and disposed on the upper layer side through the dielectric film from the pixel potential side electrode, A capacitor line including a fixed potential side electrode constituting the storage capacitor; and disposed on the upper layer side of the capacitor line and on the lower layer side of the pixel electrode, and electrically connected via the pixel potential side electrode and the first contact hole And connected to the And a conductive film electrically connected via a second contact hole, wherein the first and second contact holes do not overlap with each other when viewed in plan on the substrate in the first region. As described above, the capacitor line has a recess formed by being cut out so as to avoid the first contact hole when viewed in plan on the substrate. .

  In the electro-optical device substrate of the present invention, for example, a plurality of data lines and a plurality of scanning lines that extend so as to cross each other are formed in the display region, and a plurality of pixels correspond to the intersection of the data lines and the scanning lines. Provided. That is, the plurality of pixels include, for example, a first direction of the display area (that is, for example, the direction in which the scanning lines extend or the X direction) and a second direction intersecting with this (that is, for example, the direction in which the data lines extend or the Y direction). ) In a matrix. A pixel electrode is formed in each opening region of the plurality of pixels. Each pixel electrode is electrically connected to the data line and the scanning line through a pixel switching element electrically connected thereto. When driving the electro-optical device using the thus configured substrate for the electro-optical device, for example, each scanning line is selected by supplying a scanning signal. For example, when the pixel switching element is turned on by supplying a scanning signal from the selected scanning line, an image signal is supplied to the pixel electrode via the data line and the pixel switching element, and the so-called active matrix image Display is possible.

  The respective opening regions in the adjacent pixels are arranged to be separated from each other by non-opening regions arranged along each of the first direction and the second direction. That is, each opening area is defined in each pixel as an area partitioned by the edge of the non-opening area.

  An “opening region” according to the present invention is a region in a pixel that can substantially emit display light in an electro-optical device. For example, a pixel electrode made of a transparent conductive material such as ITO (Indium Tin Oxide) is formed. An area through which light can be transmitted, and in which the gradation of the emitted light that has passed through the electro-optical material such as liquid crystal can be changed in the electro-optical device in accordance with the change in transmittance. . In other words, the “opening region” means that the light condensed on the pixel is not transmitted, or is blocked by a light shielding body such as a wiring, a light shielding film, and various elements whose light transmittance is relatively smaller than that of the transparent electrode. It means an area where nothing happens. On the other hand, the “non-aperture region” according to the present invention means a region where light contributing to display in the electro-optical device is not transmitted. For example, a non-transparent wiring or electrode in a pixel, or a light shielding body such as various elements It means the area where it is arranged. Further, the “aperture ratio” means the ratio of the opening area in the pixel size including the opening area and the non-opening area.

The pixel electrode formed in the opening region of each pixel has an extending portion that extends to a part of the non-opening region.
Therefore, since the pixel electrode is formed continuously in a part of the non-opening region from the opening region, light leakage in the opening region can be prevented.

  The storage capacitor is formed by sequentially laminating a pixel potential side electrode, a dielectric film, and a fixed potential side electrode from the lower layer side. The storage capacitor is formed in a non-opening region of each pixel and is disposed on a lower layer side than the pixel electrode on the substrate. The storage capacitor is formed at least partially from a light-shielding conductive film, and the non-opening region is at least partially defined by such a conductive film. The pixel potential side electrode is electrically connected to the pixel electrode, and an image signal supplied to the pixel electrode is also supplied to the pixel potential side electrode. Therefore, the storage capacitor can function as a storage capacitor that temporarily holds the potential of the pixel electrode. As a result, it is possible to improve the holding characteristics of holding the pixel electrode at a potential corresponding to the image signal in each pixel. On the other hand, the fixed potential side electrode is formed as a part of the capacitance line. The capacitor line is formed in the first region extending along the first direction in the non-opening region, for example, as a wiring common to the pixels corresponding to the scanning line, and these pixels along the first direction along with the scanning line. Are formed so as to include a fixed potential side electrode disposed in each of the electrodes. Then, by fixing the capacitance line to a predetermined potential, the fixed potential side electrode is set to a predetermined potential, and in the storage capacitor, the potential difference between the potential corresponding to the image signal at the pixel potential side electrode and the predetermined potential at the fixed potential side electrode It is possible to accumulate an appropriate amount of charge according to the above. The “predetermined potential” means a predetermined potential irrespective of a change in the image signal potential or image data. For example, even if the potential is a fixed potential that is completely fixed to the time axis. Alternatively, it may be a fixed potential (for example, an inverted potential that is inverted with respect to the reference potential every fixed period) fixed at a constant potential for a fixed period with respect to the time axis.

  The conductive film is disposed on the upper layer side of the capacitor line and on the lower layer side of the pixel electrode, and is electrically connected to the pixel potential side electrode through the first contact hole, and extends from the pixel electrode to the second contact. It is electrically connected through a hole. Therefore, the conductive film functions as a relay layer that electrically relays the pixel potential side electrode and the pixel electrode.

  In the present invention, in particular, the first and second contact holes are shifted in the second direction so as not to overlap each other when viewed in plan on the substrate in the first region. Further, the capacitor line has a recess that is cut out so as to avoid the first contact hole when viewed in plan on the substrate. Typically, the first and second contact holes are arranged side by side along the second direction in the first region. Further, the first contact hole is disposed so as not to overlap with the capacitor line corresponding to the concave portion, and the second contact hole is disposed so as to overlap with the capacitor line. In other words, the first and second contact holes are respectively disposed on both end sides along the second direction in the first region while the first contact hole is not overlapped with the capacitor line by the recess. Therefore, for example, only in order to secure a region for arranging the first contact hole, it is not necessary to form the pixel potential side electrode and the conductive film so as to protrude from the opening region in plan view on the substrate. In other words, the first and second contact holes can be arranged in the first region without increasing the width of the first region. Therefore, the pixel potential side electrode and the pixel electrode can be electrically relay-connected by the conductive film without increasing the non-opening region. That is, in each pixel, the pixel potential side electrode and the pixel electrode can be reliably electrically connected while ensuring a larger size of the opening region. As a result, according to the electro-optical device substrate of the present invention, it is possible to provide an electro-optical device capable of displaying a high-quality image.

  In an aspect of the substrate for an electro-optical device according to the aspect of the invention, the conductive film may include the second contact hole among the pixel electrodes provided in each of the opening regions separated from each other by the first region. It is electrically connected to the pixel electrode on the arranged side.

  According to this aspect, the conductive film is adjacent to the pixel electrode provided in each of the adjacent opening regions separated by the first region (in other words, along the second direction intersecting the first direction). Pixel electrode) is electrically connected to the pixel electrode closest to the second contact hole. Therefore, the conductive film and the extended portion of the pixel electrode can be easily connected by the second contact hole. Further, while extending each adjacent pixel electrode to the first region, a predetermined interval can be easily secured between the adjacent pixel electrodes, and the adjacent pixel electrodes are electrically connected to each other. Can be prevented. Therefore, the width of the first region can be reduced, and the aperture ratio can be improved and the apparatus can be downsized.

  In another aspect of the electro-optical device substrate of the present invention, the pixel potential side electrode is formed of a semiconductor film, and the capacitor line is formed of a metal film.

  According to this aspect, the storage capacitor has a so-called MIS (Metal-Insulator-Semiconductor) structure in which a metal film-dielectric film (insulating film) -semiconductor film is laminated. Therefore, it is assumed that the storage capacitor is formed on the lower layer side as compared with the case of forming a so-called MIM (Metal-Insulator-Metal) structure in which a metal film-dielectric film (insulating film) -metal film is laminated. Since the pixel potential side electrode to be manufactured has high heat resistance, it can be easily manufactured by an inexpensive manufacturing apparatus, and as a result, the manufacturing cost required for manufacturing the substrate for the electro-optical device can be reduced. Furthermore, since the capacitor line is formed of a metal film, the electrical resistance in the capacitor line can be reduced.

  The “semiconductor film” according to the present invention means a conductive film formed of a semiconductor material such as polysilicon, and the “metal film” according to the present invention means a relatively low resistance conductive material such as aluminum. It means a single-layer conductive film formed including a material or a multilayer film formed including such a conductive film.

  In order to solve the above-described problems, the electro-optical device according to the present invention includes the above-described substrate for the electro-optical device according to the present invention (including various aspects thereof). Prepare.

  According to the electro-optical device of the present invention, since the electro-optical device substrate of the present invention described above is provided, an electro-optical device capable of displaying a high-quality image can be realized.

  In order to solve the above problems, an electronic apparatus according to the present invention includes the above-described electro-optical device according to the present invention.

  According to the electronic apparatus of the present invention, since the electro-optical device according to the present invention described above is provided, a projection display device, a mobile phone, an electronic notebook, a word processor, a view capable of performing high-quality display. Various electronic devices such as a finder type or a monitor direct-view type video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized. In addition, as an electronic apparatus according to the present invention, for example, an electrophoretic device such as electronic paper can be realized.

  The operation and other advantages of the present invention will become apparent from the best mode for carrying out the invention described below.

Hereinafter, embodiments of an electro-optical device substrate, an electro-optical device, and an electronic apparatus according to the present invention will be described with reference to the drawings. In this embodiment, as an example of the electro-optical device, a TFT active matrix driving type liquid crystal device with a built-in driving circuit is taken as an example.
<First Embodiment>
The liquid crystal device according to the first embodiment will be described with reference to FIGS.

  First, the overall configuration of the liquid crystal device according to the present embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view showing the configuration of the liquid crystal device according to this embodiment, and FIG. 2 is a cross-sectional view taken along the line HH ′ of FIG.

  1 and 2, in the liquid crystal device 100 according to the present embodiment, the TFT array substrate 10 and the counter substrate 20 are arranged to face each other. A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the counter substrate 20, and the TFT array substrate 10 and the counter substrate 20 are provided with a sealing material 52 provided in a seal region positioned around the image display region 10a. Are bonded to each other.

  In FIG. 1, a light-shielding frame light-shielding film 53 that defines the frame area of the image display region 10a is provided on the counter substrate 20 side in parallel with the inside of the seal region where the sealing material 52 is disposed. However, part or all of the frame light shielding film 53 may be provided as a built-in light shielding film on the TFT array substrate 10 side. A data line driving circuit 101 and an external circuit connection terminal 102 are provided along one side of the TFT array substrate 10 in a region located outside the sealing region in which the sealing material 52 is disposed in the peripheral region. The sampling circuit 7 is provided so as to be covered with the frame light shielding film 53 on the inner side of the seal region along the one side. Further, the scanning line driving circuit 104 is provided so as to be covered with the frame light-shielding film 53 inside the seal region along two sides adjacent to the one side. On the TFT array substrate 10, vertical conduction terminals 106 for connecting the two substrates with the vertical conduction material 107 are arranged in regions facing the four corner portions of the counter substrate 20. Thus, electrical conduction can be established between the TFT array substrate 10 and the counter substrate 20.

  On the TFT array substrate 10, a lead wiring 90 is formed for electrically connecting the external circuit connection terminal 102 to the data line driving circuit 101, the scanning line driving circuit 104, the vertical conduction terminal 106, and the like. .

  In FIG. 2, on the TFT array substrate 10, a laminated structure in which wiring for TFTs for pixel switching, scanning lines, data lines and the like is formed is formed. In the image display area 10a, pixel electrodes 9a are provided in a matrix on the upper layer of wiring such as pixel switching TFTs, scanning lines, and data lines. An alignment film is formed on the pixel electrode 9a. On the other hand, a light shielding film 23 is formed on the surface of the counter substrate 20 facing the TFT array substrate 10. The light shielding film 23 is formed of, for example, a light shielding metal film or the like, and is patterned, for example, in a lattice shape in the image display region 10a on the counter substrate 20. On the light shielding film 23, a counter electrode 21 made of a transparent material such as ITO is formed in a solid shape so as to face the plurality of pixel electrodes 9a. An alignment film is formed on the counter electrode 21. Further, the liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and takes a predetermined alignment state between the pair of alignment films.

  Although not shown here, in addition to the data line driving circuit 101 and the scanning line driving circuit 104, the TFT array substrate 10 is used for inspecting the quality, defects, and the like of the liquid crystal device during manufacturing or at the time of shipment. An inspection circuit, an inspection pattern, or the like may be formed.

  Next, an electrical connection configuration of the pixel portion of the liquid crystal device according to the present embodiment will be described with reference to FIG. FIG. 3 is an equivalent circuit diagram of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming the image display area of the liquid crystal device according to this embodiment.

  In FIG. 3, a plurality of pixels formed in a matrix constituting the image display region 10 a (see FIG. 1) of the liquid crystal device 100 includes a pixel electrode 9 a and a TFT 30 for switching control of the pixel electrode 9 a. Are formed, and the data line 6 a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals VS1, VS2,..., VSn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. Good.

  Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,..., Gm are applied to the scanning line 3a in a pulse-sequential manner in this order at a predetermined timing. It is configured. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and the image signal VS1, VS2,..., VSn supplied from the data line 6a is obtained by closing the switch of the TFT 30 as a switching element for a certain period. Write at a predetermined timing.

  Image signals VS1, VS2,..., VSn written to the liquid crystal through the pixel electrode 9a are held for a certain period with the counter electrode formed on the counter substrate. The liquid crystal modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. In the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel, and in the normally black mode, the light is incident according to the voltage applied in units of each pixel. The light transmittance is increased, and light having a contrast corresponding to an image signal is emitted from the liquid crystal device as a whole.

  In order to prevent the image signal held here from leaking, a storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. One electrode of the storage capacitor 70 is connected to the drain of the TFT 30 in parallel with the pixel electrode 9a, and the other electrode is connected to the capacitor line 300 with a fixed potential so as to have a constant potential.

  Next, a specific configuration of the pixel portion that realizes the above-described operation will be described with reference to FIGS. 4 to 7 in addition to FIG. FIG. 4 is a plan view of a plurality of adjacent pixel portions. 5 is a cross-sectional view taken along line AA ′ of FIG. FIG. 6 is an enlarged view showing a portion C1 in FIG. 7 is a cross-sectional view taken along line EE ′ of FIG.

  In FIGS. 4 to 7, the scales of the respective layers and members are made different in order to make each layer and each member recognizable on the drawing. In FIG. 6, the scanning lines 3a and the lower light-shielding film 11a are not shown for convenience of explanation. 4 to 7 show only the main configuration of the pixel on the TFT array substrate 10 side in the liquid crystal device 100, and this configuration will be described in detail below. 5 and 7, a portion from the TFT array substrate 10 to the pixel electrode 9a constitutes an example of the “electro-optical device substrate” according to the present invention.

  In FIG. 4, a plurality of pixel electrodes 9 a are provided in a matrix on the TFT array substrate 10. Data lines 6a and scanning lines 3a are provided along the vertical and horizontal boundaries of the pixel electrode 9a. That is, the scanning line 3a extends along the X direction, and the data line 6a extends along the Y direction so as to intersect the scanning line 3a. A pixel switching TFT 30 is provided at each of the locations where the scanning line 3a and the data line 6a intersect each other.

  The scanning line 3a, the data line 6a, the storage capacitor 70, the lower light-shielding film 11a, the relay layer 93, and the TFT 30 are viewed on the TFT array substrate 10 in plan view, that is, an opening area of each pixel corresponding to the pixel electrode 9a (that is, In each pixel, the pixel is disposed in a non-opening region surrounding a region where light that actually contributes to display is transmitted or reflected. That is, the scanning lines 3a, the storage capacitors 70, the data lines 6a, the lower light shielding film 11a, and the TFTs 30 are arranged not in the opening area of each pixel but in the non-opening area so as not to disturb the display. Yes.

  4 and 5, the TFT 30 includes a semiconductor layer 1a and a gate electrode 3b formed as a part of the scanning line 3a.

  The semiconductor layer 1a is made of, for example, polysilicon, and includes a channel region 1a ′, a low concentration source region 1b and a low concentration drain region 1c, and a high concentration source region 1d and a high concentration drain region 1e. That is, the TFT 30 has an LDD structure. The low-concentration source region 1b, the low-concentration drain region 1c, the high-concentration source region 1d, and the high-concentration drain region 1e are impurity regions formed by implanting impurities into the semiconductor layer 1a by impurity implantation such as an ion plantation method. According to such an impurity region, when the TFT 30 is not operating, it is possible to reduce the off current flowing in the source region and the drain region, and to suppress the decrease in the on current flowing when the TFT 30 is operating. The TFT 30 preferably has an LDD structure. However, the TFT 30 may have an offset structure in which no impurity is implanted into the low concentration source region 1b and the low concentration drain region 1c, or impurities with a high concentration using the gate electrode 3b as a mask. It may be a self-aligned type in which a high concentration source region and a high concentration drain region are formed by implanting the film.

  As shown in FIG. 4, the gate electrode 3b is formed as a part of the scanning line 3a, and is made of, for example, conductive polysilicon. The scanning line 3 a has a main line portion extending along the X direction and a portion extending along the Y direction so as to overlap with a region of the channel region 1 a ′ of the TFT 30 where the main line portion does not overlap. A portion of the scanning line 3a that overlaps the channel region 1a ′ functions as the gate electrode 3b. The gate electrode 3b and the semiconductor layer 1a are insulated by the insulating film 2.

  The lower light-shielding film 11a provided in a grid pattern below the TFT 30 via the base insulating film 12 shields the channel region 1a ′ of the TFT 30 and its surroundings from the return light that enters the device from the TFT array substrate 10 side. To do. The lower light-shielding film 11a includes, for example, a metal simple substance, an alloy, a metal silicide, a polysilicide, or a laminate of at least one of refractory metals such as Ti, Cr, W, Ta, Mo, and Pd. Etc.

  The base insulating film 12 is formed on the entire surface of the TFT array substrate 10 in addition to the function of interlayer insulating the TFT 30 from the lower light-shielding film 11a, and thus remains rough after polishing the surface of the TFT array substrate 10 and after cleaning. It has a function of preventing deterioration of the characteristics of the pixel switching TFT 30 due to dirt or the like.

  In FIG. 5, a storage capacitor 70 is provided on the upper layer side of the TFT 30 on the TFT array substrate 10 via the interlayer insulating film 41.

  The storage capacitor 70 is formed by disposing the lower capacitor electrode 71 and the upper capacitor electrode 300a so as to face each other with the dielectric film 75 interposed therebetween.

  The upper capacitor electrode 300 a is an example of the “fixed potential side electrode” according to the present invention, and is formed as a part of the capacitor line 300. The capacitance line 300 is formed so as to extend along the X direction, and further extends from the image display region 10a where the pixel electrode 9a is disposed to the periphery thereof. As will be described in detail later, the capacitor line 300 has a recess 310 that is cut out so as to avoid a contact hole 84 to be described later when viewed in plan on the TFT array substrate 10. The upper capacitor electrode 300a is electrically connected to a constant potential source via the capacitor line 300, and is maintained at a fixed potential. The upper capacitor electrode 300a is formed of a non-transparent metal film containing a metal or alloy such as Al (aluminum) or Ag (silver), for example, and also functions as an upper light shielding film (built-in light shielding film) that shields the TFT 30. To do. The upper capacitor electrode 300a includes at least one of refractory metals such as Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), Mo (molybdenum), and Pd (palladium). Further, it may be composed of a simple metal, an alloy, a metal silicide, a polysilicide, or a laminate of these.

  The lower capacitor electrode 71 is an example of the “pixel potential side electrode” according to the present invention, and is electrically connected to the high-concentration drain region 1e of the TFT 30 and the pixel electrode 9a.

  More specifically, as shown in FIGS. 4 to 7, the lower capacitor electrode 71 is electrically connected to the high concentration drain region 1e through the contact hole 83 (see FIGS. 4 and 5), and The contact layer 84 which is an example of the “first contact hole” according to the present invention is electrically connected to the relay layer 93 which is an example of the “conductive film” according to the present invention through the contact hole 84 (see FIGS. 4, 6 and 7). It is connected to the. Further, the relay layer 93 is electrically connected to the pixel electrode 9a through a contact hole 85 (see FIGS. 4, 6, and 7) which is an example of the “second contact hole” according to the present invention. That is, the lower capacitance electrode 71 relays the electrical connection between the high concentration drain region 1e and the pixel electrode 9a together with the relay layer 93. The lower capacitor electrode 71 is made of conductive polysilicon. Therefore, the storage capacitor 70 has a so-called MIS structure. The lower capacitance electrode 71 has a function as a light absorption layer or a light shielding film disposed between the upper capacitance electrode 300a as the upper light shielding film and the TFT 30 in addition to the function as the pixel potential side capacitance electrode.

  The dielectric film 75 has a single layer structure or a multilayer structure composed of a silicon oxide film such as an HTO (High Temperature Oxide) film, an LTO (Low Temperature Oxide) film, or a silicon nitride film.

  The lower capacitor electrode 71 may be formed of a metal film in the same manner as the upper capacitor electrode 300a. That is, the storage capacitor 70 may be formed to have a so-called MIM structure having a three-layer structure of metal film-dielectric film (insulating film) -metal film. In this case, compared to the case where the lower capacitor electrode 71 is configured using polysilicon or the like, the power consumption consumed by the entire liquid crystal device can be reduced when the liquid crystal device is driven, and the element in each pixel unit can be reduced. High speed operation is possible.

  When the storage capacitor 70 is formed to have the MIM structure as described above, the dielectric film 75 is formed after the lower capacitor electrode 71 is formed from a metal film in the manufacturing process of the liquid crystal device. . At this time, in order to prevent the lower capacitor electrode 71 from being damaged by the heat treatment in the production of the dielectric film 75, there are cases where the manufacturing complexity such as the limitation of the heating temperature is involved. In order to avoid such complicated manufacturing, the storage capacitor 70 is preferably formed to have a MIS structure. In this case, as compared with the case where the storage capacitor 70 is formed so as to have the MIM structure, it can be easily manufactured by an inexpensive manufacturing apparatus, and as a result, the manufacturing cost required for manufacturing the liquid crystal device can be reduced. Can be reduced.

  As shown in FIGS. 5 and 7, the data line 6a (see FIG. 5) and the relay layer 93 (see FIG. 7) are arranged on the upper layer side of the storage capacitor 70 on the TFT array substrate 10 via the interlayer insulating film. Is provided.

  In FIG. 5, the data line 6a is electrically connected to the high-concentration source region 1d of the semiconductor layer 1a through a contact hole 81 penetrating the interlayer insulating film 41, the insulating film 61, and the interlayer insulating film. The data line 6a and the inside of the contact hole 81 are made of, for example, an Al (aluminum) -containing material such as Al—Si—Cu or Al—Cu, Al alone, or a multilayer film including an Al layer and a TiN layer. The data line 6a also has a function of shielding the TFT 30 from light.

  In FIG. 7, the relay layer 93 is formed in the same layer as the data line 6 a on the interlayer insulating film 42.

  For the data line 6a and the relay layer 93, a thin film made of a conductive material such as a metal film is formed on the interlayer insulating film 42 using a thin film forming method, and the thin film is partially removed, that is, patterned. Thus, they are formed apart from each other. Therefore, since the data line 6a and the relay layer 93 can be formed in the same process, the manufacturing process of the device can be simplified.

  In FIG. 7, the pixel electrode 9 a is formed on the upper layer side of the relay layer 93 via the interlayer insulating film 43.

  As shown in FIG. 6, the pixel electrode 9a is an example of an “extension portion” according to the present invention, which extends from the first portion 9aa formed in the opening region to the non-opening region D1 from the first portion 9aa. A second portion 9ab. In other words, the pixel electrode 9a is formed in a part of the non-opening region D1 continuously from the opening region. Accordingly, light leakage in the opening region can be prevented, that is, a region in which the pixel electrode 9a is not formed in the opening region, and a voltage corresponding to an image signal cannot be applied to the liquid crystal layer in the region. Can be prevented from occurring.

  In FIG. 7, the pixel electrode 9a is electrically connected to the high-concentration drain region 1e by the lower capacitor electrode 71 and the relay layer 93 as described above. The second portion 9ab of the pixel electrode 9a is connected to the relay layer 93 through the contact hole 85. The contact hole 85 is formed by depositing a conductive material constituting the pixel electrode 9a such as ITO on the inner wall of a hole formed so as to penetrate the interlayer insulating layer 43. An alignment film subjected to a predetermined alignment process such as a rubbing process is provided on the upper surface of the pixel electrode 9a.

  The configuration of the pixel portion described above is common to each pixel portion as shown in FIG. Such pixel portions are periodically formed in the image display area 10a (see FIG. 1).

  As shown in FIG. 6, in the present embodiment, the contact holes 85 and 84 particularly in the region D1 that is an example of the “first region” according to the present invention that extends in the X direction among the non-opening regions. 10 are arranged side by side in the Y direction so as not to overlap each other when viewed in plan. Further, the capacitor line 300 has a recess 310 that is cut out so as to avoid the contact hole 84 when viewed in plan on the TFT array substrate 10. That is, in the non-opening region D1, the contact hole 84 is disposed so as not to overlap the capacitor line 300 corresponding to the recess 310, and the contact hole 85 is disposed so as to overlap the capacitor line 300. In other words, the contact holes 84 and 85 are arranged at both end sides along the Y direction in the non-opening region D1, while the concave portion 310 prevents the contact hole 84 from overlapping the capacitor line 300. Therefore, the contact holes 84 and 85 can be easily arranged in the non-opening region D1 without increasing the width W1 of the non-opening region D1.

  If the contact holes 84 and 85 are arranged so as to overlap each other when viewed in plan on the TFT array substrate 10 (that is, when the contact holes 84 and 85 are configured as so-called stacked contacts). The contact area between a part of the relay layer 93 to be formed in the contact hole 84 and a part of the pixel electrode 9a to be formed in the contact hole 85 may be reduced. Therefore, in this case, the electrical resistance between the lower capacitor electrode 71 and the pixel electrode 9a may be increased. Therefore, the contact holes 84 and 85 are preferably arranged so as not to overlap each other and to overlap the relay layer 93 as viewed in plan on the TFT array substrate 10 as in this embodiment.

  Here, with reference to FIG. 6, only the differences from the present embodiment will be described in detail with respect to the configuration of the pixel according to the comparative example. FIG. 8 is a plan view having the same concept as in FIG. 6 in the liquid crystal device according to the comparative example. In FIG. 8, the same reference numerals are given to the same components as the components according to the present embodiment shown in FIG. 6, and description thereof will be omitted as appropriate.

  In FIG. 8, the liquid crystal device according to the comparative example includes a lower capacitor electrode 71b, a capacitor line 300b, a relay layer 93b, and a pixel electrode 9a on the TFT array substrate 10 in the non-opening region, as in the present embodiment. ing. In FIG. 8, as in FIG. 6, the illustration of the lower light-shielding film 11a and the scanning line 3a is omitted.

  According to the liquid crystal device according to the comparative example, the contact hole 84b for electrically connecting the lower capacitor electrode 71b and the relay layer 93b overlaps with the convex portion 71bm protruding from the opening region of the lower capacitor electrode 71b. Be placed. In other words, the lower capacitor electrode 71b is formed from the portion formed in the non-opening region to the opening region only so that the contact hole 84 can be disposed avoiding the capacitor line 300b formed along the X direction. And has a protruding portion 71bm. The relay layer 93b is formed to have a portion that protrudes from the opening region so as to overlap the convex portion 71bm. The relay layer 93b is electrically connected to the second portion 9ab of the pixel electrode 9a through the contact hole 85b.

  According to the configuration of the pixel according to the comparative example, the width W2 of the non-opening region in the convex portion 71bm of the lower capacitor electrode 71 is unnecessarily widened, the size of the opening region is restricted, and the aperture ratio is reduced. This will cause a malfunction.

  However, according to the configuration of the pixel according to the present embodiment, it is not necessary to form the convex portion 71bm only for securing a region for arranging the contact hole 84 (further, the relay layer 93b is formed on the convex portion 71bm. (There is no need to form a portion protruding from the opening region so as to overlap). That is, the contact holes 84 and 85 can be easily arranged in the non-opening region D1 without increasing the width W1 (see FIG. 6) of the non-opening region D1. Therefore, the lower capacitor electrode 71 and the pixel electrode 9a can be electrically relay-connected by the relay layer 93 without increasing the non-opening area (that is, without reducing the aperture ratio). That is, in each pixel, the lower capacitor electrode 71 and the pixel electrode 9a can be reliably electrically connected while ensuring a larger size of the opening region.

  Further, in FIG. 6, particularly in the present embodiment, the relay layer 93 includes pixel electrodes 9a1 and 9a2 (in other words, along the Y direction) provided in each of the adjacent opening regions separated by the non-opening region D1. Of the adjacent pixel electrodes 9a1 and 9a2), it is electrically connected to the pixel electrode 9a1 closer to the contact hole 85 as viewed. Therefore, the relay layer 93 and the second portion 9ab of the pixel electrode 9a1 can be easily connected by the contact hole 85. Further, the pixel electrodes 9a1 and 9a2 adjacent to each other are extended to the non-opening region D1 (that is, arranged so as to partially overlap the capacitor line 300), and between the pixel electrodes 9a1 and 9a2 adjacent to each other. The predetermined interval Δ1 can be easily ensured, and the adjacent pixel electrodes 9a1 and 9a2 can be prevented from being electrically connected to each other. Therefore, the width W1 of the non-opening region D1 can be reduced, and the aperture ratio can be improved and the apparatus can be downsized.

  In FIG. 6, the arrangement of the contact holes 84 and 85 is exchanged with each other (that is, the contact hole 84 is arranged on the upper side and the contact hole 85 is arranged on the lower side in the non-opening region D1). Instead of the recess 310, a recess having an upper side cut away so as to avoid the contact hole 84 may be provided. In this case, by connecting the relay layer 93 to the pixel electrode 9a2 closer to the contact hole 85, a predetermined interval can be easily ensured between the adjacent pixel electrodes 9a1 and 9a2. It is possible to prevent the adjacent pixel electrodes 9a1 and 9a2 from being electrically connected to each other.

  As described above, according to the liquid crystal device including the electro-optical device substrate according to the present embodiment, the relay layer 93 electrically connects the lower capacitor electrode 71 and the pixel electrode 9a without increasing the non-opening region. Can be connected via relay. That is, in each pixel, the lower capacitor electrode 71 and the pixel electrode 9a can be reliably electrically connected while ensuring a larger size of the opening region. As a result, a high quality image can be displayed.

  Next, the case where the above-described liquid crystal device, which is an electro-optical device, is applied to various electronic devices will be described with reference to FIGS. FIG. 9 is a plan view showing a configuration example of the projector. Hereinafter, a projector using the liquid crystal device as a light valve will be described.

  As shown in FIG. 9, a projector 1100 includes a lamp unit 1102 made of a white light source such as a halogen lamp. The projection light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four mirrors 1106 and two dichroic mirrors 1108 arranged in the light guide 1104, and serves as a light valve corresponding to each primary color. The light enters the liquid crystal panels 1110R, 1110B, and 1110G.

  The configurations of the liquid crystal panels 1110R, 1110B, and 1110G are the same as those of the liquid crystal device described above, and are driven by R, G, and B primary color signals supplied from the image signal processing circuit. The light modulated by these liquid crystal panels enters the dichroic prism 1112 from three directions. In the dichroic prism 1112, R and B light is refracted at 90 degrees, while G light travels straight. Therefore, as a result of the synthesis of the images of the respective colors, a color image is projected onto the screen or the like via the projection lens 1114.

  Here, paying attention to the display images by the liquid crystal panels 1110R, 1110B, and 1110G, the display image by the liquid crystal panel 1110G needs to be horizontally reversed with respect to the display images by the liquid crystal panels 1110R and 1110B.

  Since light corresponding to the primary colors R, G, and B is incident on the liquid crystal panels 1110R, 1110B, and 1110G by the dichroic mirror 1108, it is not necessary to provide a color filter.

  In addition to the electronic device described with reference to FIG. 9, a mobile personal computer, a mobile phone, a liquid crystal television, a viewfinder type, a monitor direct view type video tape recorder, a car navigation device, a pager, and an electronic notebook , Calculators, word processors, workstations, videophones, POS terminals, devices with touch panels, and the like. Needless to say, the present invention can be applied to these various electronic devices.

  In addition to the liquid crystal device described in the above embodiment, the present invention is not limited to a reflective liquid crystal device (LCOS), a plasma display (PDP), a field emission display (FED, SED) in which elements are formed on a silicon substrate. It can also be applied to organic EL displays, digital micromirror devices (DMD), electrophoretic devices, and the like.

  The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the gist or concept of the invention that can be read from the claims and the entire specification. For electro-optical devices with such changes A substrate, an electro-optical device including the electro-optical device substrate, and an electronic apparatus including the electro-optical device are also included in the technical scope of the present invention.

1 is a schematic plan view of a liquid crystal device according to a first embodiment. It is the HH 'sectional view taken on the line of FIG. It is a circuit diagram which shows equivalent circuits, such as various elements and wiring in a some pixel part. It is a top view of a plurality of pixel parts which adjoin mutually. FIG. 5 is a cross-sectional view taken along line AA ′ in FIG. 4. It is an enlarged view which expands and shows the part C1 in FIG. It is the EE 'sectional view taken on the line of FIG. It is an enlarged view of the same meaning as FIG. 6 in a comparative example. 1 is a schematic cross-sectional view showing a color liquid crystal projector as an example of a projection type color display device which is an embodiment of an electronic apparatus of the present invention.

Explanation of symbols

  3a ... scanning line, 6a ... data line, 7 ... sampling circuit, 9a, 9a1, 9a2 ... pixel electrode, 9aa ... first part, 9ab ... second part, 10 ... TFT array substrate, 10a ... image display area, 20 ... Counter substrate 21 ... Counter electrode 23 ... Light shielding film 50 ... Liquid crystal layer 52 ... Sealing material 53 ... Frame light shielding film 71 ... Lower capacitance electrode 84,85 ... Contact hole 101 ... Data line driving circuit 102 DESCRIPTION OF SYMBOLS External circuit connection terminal 104 Scanning line drive circuit 106 Vertical conduction terminal 107 Vertical conduction material 300 Capacitance line 300a Upper capacitance electrode 310

Claims (5)

A substrate,
A pixel electrode formed in each opening region of a plurality of pixels constituting the display region on the substrate and having an extension extending to a part of a non-opening region separating the opening regions from each other;
A pixel potential side electrode that is formed in the non-opening region and is electrically connected to the pixel electrode to form a storage capacitor;
Of the non-opening region, the first region extending along the first direction of the display region is formed along the first direction and is located on the upper layer side through the dielectric film from the pixel potential side electrode. A capacitance line including a fixed potential side electrode disposed and constituting the storage capacitor;
It is disposed on the upper layer side of the capacitor line and on the lower layer side of the pixel electrode, and is electrically connected to the pixel potential side electrode through the first contact hole and through the extension portion and the second contact hole. And electrically connected conductive film,
The first and second contact holes are disposed in the first region so as to be shifted in a second direction intersecting the first direction so as not to overlap each other when viewed in plan on the substrate,
The electro-optical device substrate according to claim 1, wherein the capacitor line has a recess that is cut out so as to avoid the first contact hole when viewed in plan on the substrate.   The conductive film is electrically connected to the pixel electrode on the side where the second contact hole is disposed among the pixel electrodes provided in each of the adjacent opening regions separated by the first region. The substrate for an electro-optical device according to claim 1. The pixel potential side electrode is formed of a semiconductor film,
The electro-optical device substrate according to claim 1, wherein the capacitor line is formed of a metal film.   An electro-optical device comprising the electro-optical device substrate according to claim 1.   An electronic apparatus comprising the electro-optical device according to claim 4.

Images