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JP2008028100A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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JP2008028100A
JP2008028100A JP2006198279A JP2006198279A JP2008028100A JP 2008028100 A JP2008028100 A JP 2008028100A JP 2006198279 A JP2006198279 A JP 2006198279A JP 2006198279 A JP2006198279 A JP 2006198279A JP 2008028100 A JP2008028100 A JP 2008028100A
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light
fluorescent material
light emitting
material layer
emitting diode
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Kazuo Kobayashi
和郎 小林
Akizo Fujikura
彰三 藤倉
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Lumi Tech kk
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Lumi Tech kk
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device capable of emitting a high-luminance white light. <P>SOLUTION: The light-emitting device is provided with a light-emitting diode chip 3 for emitting green and blue lights, and a fluorescent material layer 6 mainly excited by the green light to emit a red light. With this configuration, the device can emit a white light while suppressing deterioration of the strength of the blue light as much as possible. Accordingly, the device can emit a high-luminance white light. Since a heat insulating layer 4 is provided between the diode chip 3 and the fluorescent material layer 6, an organic compound is not decomposed by heat even if it is used, and high light-emitting efficiency can be maintained. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、発光装置に関するものである。   The present invention relates to a light emitting device.

白色光を発光する発光ダイオードとして、例えば砲弾型発光ダイオードや表面実装型発光ダイオードなどが知られている。砲弾型発光ダイオードは、光射出部が砲弾型に形成された発光ダイオードであり、砲弾型のケースに発光ダイオードのチップが実装された構成になっている。表面実装型発光ダイオードは、発光ダイオードチップがカップ型のケースに実装された構成になっている。いずれも、チップからは青色光が発光され、ケースにはＹＡＧ（イットリウム・アルミニウム・ガーネット）など、青色光によって励起して発光する蛍光材料（蛍光体）が塗布されている。この青色光と蛍光材料からの光とが混合して白色光を発光するようになっている。（例えば、特許文献１参照）。
特許第３７００５０２号公報 Known light-emitting diodes that emit white light include, for example, bullet-type light-emitting diodes and surface-mounted light-emitting diodes. The bullet-type light emitting diode is a light-emitting diode having a light-emitting portion formed in a bullet shape, and has a configuration in which a light-emitting diode chip is mounted on a bullet-shaped case. The surface mount type light emitting diode has a configuration in which a light emitting diode chip is mounted in a cup type case. In both cases, blue light is emitted from the chip, and the case is coated with a fluorescent material (phosphor) that emits light when excited by blue light, such as YAG (yttrium, aluminum, garnet). The blue light and the light from the fluorescent material are mixed to emit white light. (For example, refer to Patent Document 1).
Japanese Patent No. 3700502

しかしながら、発光ダイオードから発光される青色光の一部が蛍光材料の励起に用いられるため、発光ダイオードから発光される青色光の光強度、すなわち主波長の光強度が著しく低下してしまう。このため、白色光の輝度が低下することになる。
以上のような事情に鑑み、本発明の目的は、高い輝度の白色光を発光することが可能な発光装置を提供することにある。 However, since a part of the blue light emitted from the light emitting diode is used for exciting the fluorescent material, the light intensity of the blue light emitted from the light emitting diode, that is, the light intensity of the main wavelength is significantly reduced. For this reason, the brightness | luminance of white light falls.
In view of the circumstances as described above, an object of the present invention is to provide a light emitting device capable of emitting white light with high luminance.

上記目的を達成するため、本発明に係る発光装置は、基板と、前記基板上に設けられ、緑色光及び青色光を発光する発光素子と、前記発光素子を覆うように設けられた断熱層と、前記断熱層上に設けられ、主として緑色光によって励起し赤色光を発光する蛍光材料層とを具備することを特徴とする。   To achieve the above object, a light emitting device according to the present invention includes a substrate, a light emitting element that is provided on the substrate and emits green light and blue light, and a heat insulating layer that is provided so as to cover the light emitting element. And a fluorescent material layer which is provided on the heat insulating layer and is excited mainly by green light and emits red light.

本発明の発明者は、緑色光及び青色光を発光する発光素子と、主として緑色光によって励起し赤色光を発光する蛍光材料層とを組み合わせることによって、青色光の強度の低下を極力抑えて白色光を発光することができる点を見出した。そこで、本発明では、基板と、この基板上に設けられ緑色光及び青色光を発光する発光素子と、主として緑色光によって励起し赤色光を発光する蛍光材料層とを具備するので、青色光の強度の低下を極力抑え、主波長である青色光を十分に活かした白色光を発光することができる。このため、高い輝度の白色光を発光することができる。また、本発明によれば、発光素子を覆うように断熱層が設けられ、この断熱層上に蛍光材料層が設けられているので、蛍光材料層が熱せられるのを防ぐことができる。これにより、蛍光材料層を構成する有機又は無機の蛍光材料が熱によって分解されるのを防ぐことができ、蛍光材料の長寿命化を実現することができる。   The inventor of the present invention combines a light emitting element that emits green light and blue light with a fluorescent material layer that is mainly excited by green light and emits red light, thereby suppressing a decrease in the intensity of blue light as much as possible. The point which can emit light was discovered. Therefore, the present invention includes a substrate, a light emitting element that is provided on the substrate and emits green light and blue light, and a fluorescent material layer that emits red light by being excited mainly by green light. It is possible to emit white light that fully suppresses the blue light, which is the dominant wavelength, while minimizing the decrease in intensity. For this reason, white light with high luminance can be emitted. In addition, according to the present invention, since the heat insulating layer is provided so as to cover the light emitting element, and the fluorescent material layer is provided on the heat insulating layer, the fluorescent material layer can be prevented from being heated. Thereby, it can prevent that the organic or inorganic fluorescent material which comprises a fluorescent material layer is decomposed | disassembled with a heat | fever, and can prolong the lifetime of a fluorescent material.

上記発光装置は、前記蛍光材料層が、主として緑色光によって励起し赤色光を発光する有機化合物を主成分とすることを特徴とする。
有機化合物を主成分とする蛍光材料は、一般的に発光効率が高く低コストではあるが熱によって分解されやすいという特性を有している。本発明によれば、発光素子と蛍光材料層との間に断熱層が設けられているので、有機化合物を用いた場合も熱によって分解されることなく、高い発光効率を維持することができる。 The light-emitting device is characterized in that the fluorescent material layer is mainly composed of an organic compound that is excited by green light and emits red light.
A fluorescent material containing an organic compound as a main component generally has a characteristic of being easily decomposed by heat although it has high luminous efficiency and low cost. According to the present invention, since the heat insulating layer is provided between the light emitting element and the fluorescent material layer, even when an organic compound is used, high luminous efficiency can be maintained without being decomposed by heat.

上記発光装置は、前記蛍光材料層が、主として緑色光によって励起し赤色光を発光する無機化合物を主成分とすることを特徴とする。
本発明では、蛍光材料層が、主として緑色光によって励起し赤色光を発光する無機化合物を主成分とすることも可能である。無機化合物の蛍光材料の中にも熱によって分解されやすい特性を有するものもある。これに対して、本発明では、発光素子と蛍光材料層との間に断熱層が設けられているので、熱によって分解されやすい無機化合物を用いた場合でも、熱によって分解されることなく、高い発光効率を維持することができる。 The light-emitting device is characterized in that the fluorescent material layer is mainly composed of an inorganic compound that is excited by green light and emits red light.
In the present invention, the fluorescent material layer may be mainly composed of an inorganic compound that is excited by green light and emits red light. Some inorganic fluorescent materials have the property of being easily decomposed by heat. On the other hand, in the present invention, since a heat insulating layer is provided between the light emitting element and the fluorescent material layer, even when an inorganic compound that is easily decomposed by heat is used, it is high without being decomposed by heat. Luminous efficiency can be maintained.

本発明によれば、高い輝度の白色光を発光することが可能な発光装置を得ることができる。   According to the present invention, it is possible to obtain a light emitting device capable of emitting white light with high luminance.

［第１実施形態］
本発明の第１実施形態を図面に基づき説明する。
図１は、本発明に係る発光装置１の全体構成を示す斜視図である。
図１に示すように、発光装置１は、印刷基板２と、発光ダイオードチップ３と、断熱層４と、放熱部５と、蛍光材料層６とを主体として構成されている。この発光装置１は、発光ダイオードチップ３が印刷基板２の表面２ａ側にマトリクス状に配列され、断熱層４と蛍光材料層６とが発光ダイオードチップ３上に順に積層されると共に、放熱部５が印刷基板２の裏面２ｂ側に設けられた構成になっている。 [First Embodiment]
A first embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a perspective view showing an overall configuration of a light emitting device 1 according to the present invention.
As shown in FIG. 1, the light emitting device 1 is mainly configured by a printed board 2, a light emitting diode chip 3, a heat insulating layer 4, a heat radiating part 5, and a fluorescent material layer 6. In the light emitting device 1, the light emitting diode chips 3 are arranged in a matrix on the surface 2 a side of the printed board 2, and the heat insulating layer 4 and the fluorescent material layer 6 are sequentially stacked on the light emitting diode chip 3, and the heat radiating unit 5. Is provided on the back surface 2 b side of the printed circuit board 2.

図２は、発光装置１のＡ−Ａ断面に沿った部分の一部の構成を示す図である。
印刷基板２は、例えば樹脂などの材料からなる基板である。印刷基板２の表面２ａ上には、例えば金属からなる印刷層７が設けられている。印刷層７は、上側ヒートシンク７ａと電極７ｂとを含んでいる。上側ヒートシンク７ａは、発光ダイオードチップ３が実装される土台となる部分であり、各発光ダイオードチップ３について当該発光ダイオードチップ３に平面視で重なる領域に配置されている。電極７ｂは、上側ヒートシンク７ａの間に設けられ、発光ダイオードチップ３同士を接続する領域である。上側ヒートシンク７ａと電極７ｂとの間には隙間が設けられており、両者の間は電気的に絶縁されている。 FIG. 2 is a diagram illustrating a partial configuration of a portion along the AA cross section of the light emitting device 1.
The printed board 2 is a board made of a material such as a resin. On the surface 2a of the printed board 2, a printed layer 7 made of, for example, metal is provided. The print layer 7 includes an upper heat sink 7a and an electrode 7b. The upper heat sink 7a is a base portion on which the light emitting diode chip 3 is mounted, and is disposed in a region where each light emitting diode chip 3 overlaps the light emitting diode chip 3 in plan view. The electrode 7b is an area that is provided between the upper heat sinks 7a and connects the light emitting diode chips 3 to each other. A gap is provided between the upper heat sink 7a and the electrode 7b, and the two are electrically insulated.

発光ダイオードチップ３は、印刷層７の上側ヒートシンク７ａ上に実装されており、印刷層７を介して印刷基板２の表面２ａ側に実装されていることになる。この発光ダイオードチップ３は、例えば２本の導電性ワイヤ８を介して電極７ｂに接続されている。発光ダイオードチップ３同士は、導電性ワイヤ８及び電極７ｂを介して、図２の左右方向に直列に接続されていることになる。   The light emitting diode chip 3 is mounted on the upper heat sink 7 a of the printing layer 7, and is mounted on the surface 2 a side of the printed board 2 through the printing layer 7. The light emitting diode chip 3 is connected to the electrode 7b via, for example, two conductive wires 8. The light emitting diode chips 3 are connected in series in the left-right direction in FIG. 2 via the conductive wires 8 and the electrodes 7b.

発光ダイオードチップ３の発光スペクトルを図３に実線で示す。同図の縦軸は光強度（相対値）、横軸は波長（ｎｍ）を示している。発光ダイオードチップ３は、波長５３０ｎｍ〜５５０ｎｍ（緑色光）の範囲及び波長約４４０ｎｍ〜４８０ｎｍ（青色光）の範囲に強度のピークを有する光を発光する。特に波長約５４０ｎｍ、波長約４６０ｎｍにおいて強度が最大になっている。   The emission spectrum of the light-emitting diode chip 3 is shown by a solid line in FIG. In the figure, the vertical axis represents light intensity (relative value), and the horizontal axis represents wavelength (nm). The light emitting diode chip 3 emits light having an intensity peak in the wavelength range of 530 nm to 550 nm (green light) and in the wavelength range of about 440 nm to 480 nm (blue light). In particular, the intensity is maximum at a wavelength of about 540 nm and a wavelength of about 460 nm.

断熱層４は、発光ダイオードチップ３を覆うように印刷基板２の表面２ａ上に積層されている。この断熱層４は、例えばエポキシ系樹脂やシリコン系樹脂など、熱伝導率が低く光透過可能な樹脂材料からなる樹脂層である。   The heat insulating layer 4 is laminated on the surface 2 a of the printed board 2 so as to cover the light emitting diode chip 3. The heat insulating layer 4 is a resin layer made of a resin material having a low thermal conductivity and allowing light transmission, such as an epoxy resin or a silicon resin.

放熱部５は、下側ヒートシンク９と、導熱性絶縁材１０と、取付板１１とを主体として構成されている。下側ヒートシンク９は、例えばアルミニウム等の金属からなる板状部材であり、各発光ダイオードチップ３に対応するように設けられている。下側ヒートシンク９は、上側ヒートシンク７ａに平面視で重なる領域に配置されており、印刷基板２の貫通孔２ｃを貫通する導熱材１２を介して上側ヒートシンク７ａに接続されている。発光ダイオードチップ３からの熱が上側ヒートシンク７ａ及び導熱材１２を介して下側ヒートシンク９に伝達され、下側ヒートシンク９から放熱されるようになっている。   The heat radiating part 5 is mainly composed of a lower heat sink 9, a thermally conductive insulating material 10, and a mounting plate 11. The lower heat sink 9 is a plate-like member made of a metal such as aluminum, and is provided so as to correspond to each light emitting diode chip 3. The lower heat sink 9 is disposed in a region overlapping the upper heat sink 7a in plan view, and is connected to the upper heat sink 7a via a heat conducting material 12 that passes through the through hole 2c of the printed board 2. Heat from the light emitting diode chip 3 is transmitted to the lower heat sink 9 via the upper heat sink 7 a and the heat conducting material 12, and is radiated from the lower heat sink 9.

導熱性絶縁材１０は、例えば住友スリーエム社製の「ハイパーソフト放熱材」などが好適に用いられる。この導熱性絶縁材１０は、下側ヒートシンク９の下面９ａを覆うように設けられている。取付板１１は、例えばアルミニウム等の金属からなる大判の板状部材であり、導熱性絶縁材１０の下面１０ａに密着して設けられている。   As the thermally conductive insulating material 10, for example, “Hyper Soft Heat Dissipating Material” manufactured by Sumitomo 3M Ltd. is preferably used. The thermally conductive insulating material 10 is provided so as to cover the lower surface 9 a of the lower heat sink 9. The mounting plate 11 is a large plate-like member made of a metal such as aluminum, and is provided in close contact with the lower surface 10 a of the thermally conductive insulating material 10.

蛍光材料層６は蛍光体層である。この蛍光材料層６は、例えば蛍光材料を断熱層４上に塗布する、蛍光材料を含んだフィルムを断熱層４上に貼付する、若しくは蛍光材料を含んだ基板を断熱層４上に着脱自在に配置することによって形成されている。蛍光材料としては、主として緑色光によって励起し赤色光を発光する蛍光材料が好ましい。例えばＢＡＳＦ社製の「Ｌｕｍｏｇｅｎ（登録商標） Ｆ Ｄｙｅｓ（型番ＲＥＤ−３０５）」、ＬＡＮＸＥＳＳ社製の「Ｍａｃｒｏｌｅｘ（登録商標：型番Ｆｌｕｏｒｅｓｃｅｎｔ Ｒｅｄ Ｇ）」、Ｃｌａｒｉａｎｔ社製の「Ｈｏｓｔａｓｏｌ（登録商標：型番Ｒｅｄ−ＧＧ）」、チバスペシャルティケミカルズ社製の「ＯＲＡＣＥＴ（登録商標：型番Ｐｉｎｋ ＲＦ）」などの有機化合物が挙げられる。また、青色光、緑色光の二つの波長が並立した上記の発光ダイオードチップ３を励起源として演色性に優れた白色光を発光するための無機蛍光体として、例えばＳＳｅ：Ｅｕを始めとしてＥｕ付活の硫化物、酸硫化物、窒化物、酸窒化物の赤色蛍光体を適宜用いることができるし、ＺｎＳｅ（ジンクセレン）などの無機蛍光体を用いても構わない。   The fluorescent material layer 6 is a phosphor layer. For example, the fluorescent material layer 6 is formed by applying a fluorescent material on the heat insulating layer 4, attaching a film containing the fluorescent material on the heat insulating layer 4, or detaching a substrate containing the fluorescent material on the heat insulating layer 4. It is formed by arranging. The fluorescent material is preferably a fluorescent material that is excited mainly by green light and emits red light. For example, “Lumogen (registered trademark) F Dyes (model number RED-305)” manufactured by BASF, “Macrolex (registered trademark: model Fluorescent Red G)” manufactured by LANXESS, “Hostasol (registered trademark: model number Red) manufactured by Clariant, Inc. -GG) "and" ORACET (registered trademark: model number RF) "manufactured by Ciba Specialty Chemicals. Further, as an inorganic phosphor for emitting white light having excellent color rendering properties by using the light emitting diode chip 3 in which two wavelengths of blue light and green light are arranged side by side as an excitation source, for example, SSe: Eu and the like are attached with Eu. Active sulfide, oxysulfide, nitride, and oxynitride red phosphors can be used as appropriate, and inorganic phosphors such as ZnSe (zinc selenium) can also be used.

図４は、ＢＡＳＦ社製の「Ｌｕｍｏｇｅｎ（登録商標） Ｆ Ｄｙｅｓ（型番ＲＥＤ−３０５）」を用いたときの蛍光材料層６の吸収・発光スペクトルを示している。同図に示すように、蛍光材料層６は、吸収スペクトルのピークが波長約５３０ｎｍ〜５６０ｎｍ（緑色光）の範囲に形成されており、発光スペクトルのピークが波長約６００ｎｍ〜６５０ｎｍ（赤色光）の範囲に形成されている。   FIG. 4 shows an absorption / emission spectrum of the fluorescent material layer 6 when “Lumogen (registered trademark) F Dyes (model number RED-305)” manufactured by BASF is used. As shown in the figure, the fluorescent material layer 6 has an absorption spectrum peak in the wavelength range of about 530 nm to 560 nm (green light) and an emission spectrum peak of about 600 nm to 650 nm (red light). Formed in the range.

このような吸収・発光スペクトルを有する蛍光材料層６を用いた発光装置１は、図３に破線で示すように、波長約４４０ｎｍ〜４８０ｎｍ（青色光）の範囲、波長約５１０ｎｍ〜５３０ｎｍ（緑色光）の範囲、波長約６００ｎｍ〜６５０ｎｍ（赤色光）の範囲にそれぞれピークを有する白色光を発光することとなる。発光ダイオードチップ３から発光された波長約４４０ｎｍ〜４８０ｎｍの光（青色光）の光強度の減少は２０％程度に抑えられている。   The light emitting device 1 using the fluorescent material layer 6 having such an absorption / emission spectrum has a wavelength range of about 440 nm to 480 nm (blue light) and a wavelength of about 510 nm to 530 nm (green light) as shown by a broken line in FIG. ), And white light having a peak in the wavelength range of about 600 nm to 650 nm (red light). A decrease in light intensity of light (blue light) having a wavelength of about 440 nm to 480 nm emitted from the light emitting diode chip 3 is suppressed to about 20%.

本発明の発明者は、緑色光及び青色光を発光する発光素子と、主として緑色光によって励起し赤色光を発光する蛍光材料層とを組み合わせることによって、青色光の強度の低下を極力抑えて白色光を発光することができる点を見出した。そこで、本実施形態では、緑色光及び青色光を発光する発光ダイオードチップ３と、主として緑色光によって励起し赤色光を発光する蛍光材料層６とを具備するので、青色光の強度の低下を極力抑え、主波長である青色光を十分に活かした白色光を発光することができる。このため、高い輝度の白色光を発光することができる。   The inventor of the present invention combines a light emitting element that emits green light and blue light and a fluorescent material layer that emits red light mainly excited by green light, and suppresses a decrease in the intensity of blue light as much as possible. The point which can emit light was discovered. Therefore, in the present embodiment, the light emitting diode chip 3 that emits green light and blue light and the fluorescent material layer 6 that is mainly excited by green light and emits red light are provided, so that the intensity of blue light is reduced as much as possible. Therefore, white light can be emitted by sufficiently utilizing the blue light that is the dominant wavelength. For this reason, white light with high luminance can be emitted.

また、本実施形態では、蛍光材料層６が、主として緑色光によって励起し赤色光を発光する有機化合物を主成分とすることが可能である。有機化合物を主成分とする蛍光材料は、一般的に発光効率が高く低コストではあるが熱によって分解されやすいという特性を有している。本実施形態では、発光ダイオードチップ３と蛍光材料層６との間に断熱層４が設けられているので、有機化合物を用いた場合も熱によって分解されることなく、高い発光効率を維持することができる。   In the present embodiment, the fluorescent material layer 6 can be mainly composed of an organic compound that is excited by green light and emits red light. A fluorescent material containing an organic compound as a main component generally has a characteristic of being easily decomposed by heat although it has high luminous efficiency and low cost. In this embodiment, since the heat insulation layer 4 is provided between the light emitting diode chip 3 and the fluorescent material layer 6, even when an organic compound is used, high luminous efficiency is maintained without being decomposed by heat. Can do.

また、本実施形態では、蛍光材料層６が、主として緑色光によって励起し赤色光を発光する無機化合物を主成分とすることも可能である。無機化合物の蛍光材料の中にも熱によって分解されやすい特性を有するものもある。これに対して、本実施形態では、発光ダイオードチップ３と蛍光材料層６との間に断熱層４が設けられているので、熱によって分解されやすい無機化合物を用いた場合でも、熱によって分解されることなく、高い発光効率を維持することができる。   In the present embodiment, the fluorescent material layer 6 can also be mainly composed of an inorganic compound that is excited by green light and emits red light. Some inorganic fluorescent materials have the property of being easily decomposed by heat. On the other hand, in this embodiment, since the heat insulating layer 4 is provided between the light emitting diode chip 3 and the fluorescent material layer 6, even when an inorganic compound that is easily decomposed by heat is used, it is decomposed by heat. And high luminous efficiency can be maintained.

［第２実施形態］
次に、本発明の第２実施形態を説明する。図５は、本実施形態に係る発光装置１０１の断面構成を示す図である。同図に示すように、発光装置１０１は、カップ型のケース１０２内に発光ダイオードチップ１０３が実装された構成になっている。ケース１０２は、中央部が窪んだ形状になっており、この窪部１０２ａの底面１０２ｂに発光ダイオードチップ３が実装されている。各発光ダイオードチップ１０３は、例えば第１実施形態と同様の構成によって直列に接続されている。ケース１０２の窪部１０２ａには、発光ダイオードチップ３を覆うと共に当該窪部１０２ａを埋めるように断熱層１０４が設けられている。断熱層１０４の上面１０４ａは平坦になっており、当該上面１０４ａはケース１０２の上面１０２ｃと面一状態になっている。この断熱層１０４の上面１０４ａ及びケース１０２の上面１０２ｃには、第１実施形態と同様の蛍光材料からなる蛍光材料層１０６が設けられている。 [Second Embodiment]
Next, a second embodiment of the present invention will be described. FIG. 5 is a diagram illustrating a cross-sectional configuration of the light emitting device 101 according to the present embodiment. As shown in the figure, the light emitting device 101 has a configuration in which a light emitting diode chip 103 is mounted in a cup type case 102. The case 102 has a shape in which the central portion is recessed, and the light emitting diode chip 3 is mounted on the bottom surface 102b of the recessed portion 102a. Each light emitting diode chip 103 is connected in series by the same configuration as that of the first embodiment, for example. In the recess 102a of the case 102, a heat insulating layer 104 is provided so as to cover the light emitting diode chip 3 and fill the recess 102a. The upper surface 104 a of the heat insulating layer 104 is flat, and the upper surface 104 a is flush with the upper surface 102 c of the case 102. A fluorescent material layer 106 made of the same fluorescent material as that of the first embodiment is provided on the upper surface 104a of the heat insulating layer 104 and the upper surface 102c of the case 102.

このように、本実施形態によれば、発光ダイオードチップ１０３を覆うように断熱層１０４が設けられており、この断熱層１０４上に蛍光材料層１０６が設けられているので、発光ダイオードチップ１０３からの熱によって蛍光材料層１０６が熱せられるのを防ぐことができる。これにより、蛍光材料層１０６を構成する有機又は無機の蛍光材料が熱によって分解されるのを防ぐことができ、蛍光材料の長寿命化を実現することができる。   Thus, according to the present embodiment, the heat insulating layer 104 is provided so as to cover the light emitting diode chip 103, and the fluorescent material layer 106 is provided on the heat insulating layer 104. It is possible to prevent the fluorescent material layer 106 from being heated by this heat. As a result, the organic or inorganic fluorescent material constituting the fluorescent material layer 106 can be prevented from being decomposed by heat, and the lifetime of the fluorescent material can be extended.

本発明の技術範囲は上記実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲で適宜変更を加えることができる。
上記実施形態では、発光ダイオードチップが複数設けられている場合について説明したが、これに限られることは無く、発光ダイオードチップが１個設けられた構成であっても良い。発光ダイオードチップが１個設けられた場合においても、勿論上記効果を奏することとなる。 The technical scope of the present invention is not limited to the above-described embodiment, and appropriate modifications can be made without departing from the spirit of the present invention.
In the above embodiment, the case where a plurality of light emitting diode chips are provided has been described. Even in the case where one light emitting diode chip is provided, the above-described effect is naturally obtained.

本発明の第１実施形態に係る発光装置の全体構成を示す斜視図。1 is a perspective view showing an overall configuration of a light emitting device according to a first embodiment of the present invention. 本実施形態に係る発光装置の断面図。Sectional drawing of the light-emitting device which concerns on this embodiment. 発光ダイオードチップ及び発光装置の発光スペクトルを示すグラフ。The graph which shows the emission spectrum of a light emitting diode chip and a light-emitting device. 蛍光材料層の光吸収・発光スペクトルを示すグラフ。The graph which shows the light absorption and emission spectrum of a fluorescent material layer. 本発明の第２実施形態に係る発光装置の全体構成を示す断面図。Sectional drawing which shows the whole structure of the light-emitting device which concerns on 2nd Embodiment of this invention.

符号の説明Explanation of symbols

１、１０１…発光装置 ２…印刷基板（基板） ３、１０３…発光ダイオードチップ（発光素子） ４、１０４…断熱層 ５…放熱部 ６、１０６…蛍光材料層 ７…印刷層 ７ａ…上側ヒートシンク ７ｂ…電極 ８…導電性ワイヤ ９…下側ヒートシンク（放熱層）
DESCRIPTION OF SYMBOLS 1,101 ... Light-emitting device 2 ... Printed circuit board (board | substrate) 3,103 ... Light emitting diode chip (light emitting element) 4,104 ... Heat insulation layer 5 ... Radiation part 6, 106 ... Fluorescent material layer 7 ... Print layer 7a ... Upper heat sink 7b ... Electrode 8 ... Conductive wire 9 ... Lower heat sink (heat dissipation layer)

Claims (3)

基板と、
前記基板上に設けられ、緑色光及び青色光を発光する発光素子と、
前記発光素子を覆うように設けられた断熱層と、
前記断熱層上に設けられ、主として緑色光によって励起し赤色光を発光する蛍光材料層と
を具備することを特徴とする発光装置。 A substrate,
A light emitting element provided on the substrate and emitting green light and blue light;
A heat insulating layer provided to cover the light emitting element;
And a fluorescent material layer that is provided on the heat insulating layer and is excited mainly by green light to emit red light. 前記蛍光材料層が、主として緑色光によって励起し赤色光を発光する有機化合物を主成分とする
ことを特徴とする請求項１に記載の発光装置。 The light emitting device according to claim 1, wherein the fluorescent material layer is mainly composed of an organic compound that is excited by green light and emits red light. 前記蛍光材料層が、主として緑色光によって励起し赤色光を発光する無機化合物を主成分とする
ことを特徴とする請求項１又は請求項２に記載の発光装置。
The light emitting device according to claim 1, wherein the fluorescent material layer is mainly composed of an inorganic compound that is excited by green light and emits red light.
JP2006198279A 2006-07-20 2006-07-20 Light-emitting device Pending JP2008028100A (en)

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JP2005206825A (en) * 2003-12-26 2005-08-04 Fine Rubber Kenkyusho:Kk Fluorescent composition, fluorescent member, and semiconductor light-emitting device
JP2005303320A (en) * 2004-04-14 2005-10-27 Genesys Photonics Inc A one-chip LED with three emission spectra of red, blue and green wavelengths.
JP2006128700A (en) * 2004-10-29 2006-05-18 Ledengin Inc Light emitting device with thermal insulation and refractive index matching material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005206825A (en) * 2003-12-26 2005-08-04 Fine Rubber Kenkyusho:Kk Fluorescent composition, fluorescent member, and semiconductor light-emitting device
JP2005303320A (en) * 2004-04-14 2005-10-27 Genesys Photonics Inc A one-chip LED with three emission spectra of red, blue and green wavelengths.
JP2006128700A (en) * 2004-10-29 2006-05-18 Ledengin Inc Light emitting device with thermal insulation and refractive index matching material

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JP2010129543A (en) * 2008-11-27 2010-06-10 Samsung Led Co Ltd Headlight for vehicle

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