JP2008016635A - Solid-state imaging device and manufacturing method thereof - Google Patents

Abstract

A color solid-state imaging device is provided that hardly causes color mixing due to light obliquely transmitted through a color filter and that hardly causes a decrease in sensitivity.
A solid-state imaging device is arranged in a matrix on a substrate, and a plurality of first imaging pixels that receive light of a first color and a plurality of first imaging pixels that receive light of a second color. 2 imaging pixels 11B and a plurality of third imaging pixels 11C that receive light of the third color. Each first imaging pixel 11 </ b> A is formed in the light receiving unit 12 formed on the substrate 10, the in-layer lens 13 formed on the light receiving unit 12, the portion around the in-layer lens 13, and the first imaging pixel 11 </ b> A. A first light attenuating layer 14A that transmits color light and attenuates light of other colors, and is formed on the inner lens 13 and the first light attenuating layer 14A, and transmits light of the first color. Each having a first color filter 15A.
[Selection] Figure 1

Description

  The present invention relates to a solid-state imaging device and a manufacturing method thereof, and more particularly to a solid-state imaging device including an on-chip color filter and a manufacturing method thereof.

  Solid-state imaging devices are used in various image input devices such as video cameras, digital still cameras, and facsimiles. Solid-state imaging devices are represented by CCD (Charge-Coupled Devices), MOS (Metal Oxide Semiconductor), and the like, and light receiving units that convert light into electronic signals are arranged in a matrix.

  A color solid-state imaging device including a color filter that reproduces colors is also generally known. The color filter is composed of red (R), green (B), and blue (B) filters, which are called the three primary colors of light, and is a primary color filter that has good color development and excellent reproducibility, as well as cyan (C) and magenta (M ), Yellow (Y) and green (G) filters, which are broadly classified into two types of complementary color filters, which are said to be highly sensitive and have a calm color.

  The color filters are arranged in a predetermined pattern in which one color corresponds to one light receiving unit on the light receiving units arranged in a matrix. Accordingly, light of one color is incident on one light receiving portion of the color solid-state imaging device. However, the incident light on the color solid-state imaging device does not necessarily enter the light receiving surface perpendicularly and in parallel with each other. Light incident from the oblique direction with respect to the light receiving surface is transmitted obliquely through the color filter, and therefore enters the adjacent light receiving portion. For this reason, light that has been obliquely transmitted through the color filter causes color mixing and degrades the spectral characteristics of the color solid-state imaging device. Furthermore, since the degree of color mixing changes depending on the incident angle of light, it causes deterioration of characteristics such as line shading and sensitivity variations.

A solid-state imaging device in which a light-shielding black filter layer is formed on the lower side of a color filter has been proposed in order to prevent light that has been obliquely transmitted through the color filter from entering an adjacent light receiving unit (for example, Patent Documents). 1). Light that has been obliquely transmitted through the color filter is blocked by the black filter layer, and therefore does not enter the adjacent light receiving portion. Thereby, generation | occurrence | production of color mixing can be reduced.
JP-A-6-151790

  However, the conventional color solid-state imaging device has the following problems. First, since the black filter layer blocks not only light that is transmitted obliquely through the color filter but also part of light that is transmitted vertically, there is a problem that sensitivity is lowered. In particular, when an in-layer lens is formed between the color filter and the light receiving unit for condensing, the black filter is formed by filling a portion between the in-layer lenses. Since the in-layer lens is a convex lens, the black filter covers a part of the in-layer lens, and the light vertically transmitted through the color filter is largely blocked.

  SUMMARY OF THE INVENTION An object of the present invention is to solve the above-described conventional problems, and to realize a color solid-state imaging device that is unlikely to cause color mixing due to light that is obliquely transmitted through a color filter and that is unlikely to cause a decrease in sensitivity.

  In order to achieve the above object, according to the present invention, the solid-state imaging device includes a light attenuation layer that transmits only predetermined light.

  Specifically, a solid-state imaging device according to the present invention is arranged in a matrix on a substrate, and has a plurality of first imaging pixels that receive light of a first color and a plurality that receives light of a second color. Each of the second imaging pixels and a plurality of third imaging pixels that receive light of the third color, and each first imaging pixel includes a first light receiving unit formed on the substrate, A first in-layer lens formed by interposing a first planarizing film at a position corresponding to the first light-receiving portion, and a periphery of the first in-layer lens on the first planarizing film A first light attenuating layer that is formed in the portion of the first light attenuating layer and transmits the light of the first color and attenuating the light of the other color, and the second planarization on the inner lens and the first light attenuating layer. And a first color filter that transmits light of the first color, and each second imaging pixel includes a second light receiving unit formed on the substrate, and a top surface of the substrate. A second in-layer lens formed by interposing a first planarizing film at a position corresponding to the second light-receiving portion, and a second planarizing film interposed on the second in-layer lens. And a second color filter that transmits light of the second color, and each third imaging pixel includes a third light receiving portion formed on the substrate, and a third light receiving portion formed on the substrate. A third in-layer lens formed via a first planarizing film at a position corresponding to the light receiving portion, and a second planarizing film formed over the third in-layer lens; And a third color filter that transmits light of the third color.

  According to the solid-state imaging device of the present invention, the first imaging pixel is formed in a portion around the inner lens on the first planarization film, transmits the first color light, and other colors. Since the first light attenuating layer for attenuating the light is attenuated, the light transmitted obliquely through the color filters other than the first color filter is attenuated without blocking the light transmitted through the first color filter. be able to. Therefore, it is possible to suppress the occurrence of color mixture due to light obliquely transmitted through the color filter without reducing the sensitivity. In addition, it is possible to suppress the occurrence of variations in line shading and sensitivity unevenness.

  In the solid-state imaging device of the present invention, it is preferable that the first light attenuation layer is made of the same material as that of the first color filter. With such a configuration, it is possible to reliably attenuate light other than the light of the first color by the first light attenuation layer.

  In the solid-state imaging device of the present invention, the first color light is green, the second color light is red, the third color light is blue, and the first imaging pixel on the substrate, The arrangement of the second imaging pixel and the third imaging pixel preferably forms a primary color Bayer array as a whole. Moreover, you may comprise the primary color stripe arrangement | sequence as a whole.

  In the solid-state imaging device of the present invention, it is preferable that the planar dimension of the outer shape of the first light attenuation layer is smaller than or equal to the planar dimension of the first color filter. With such a configuration, it is possible to attenuate light transmitted obliquely through a color filter that causes color mixing while preventing an increase in size.

  In the solid-state imaging device of the present invention, it is preferable that the thickness of the first light attenuation layer is thinner than the thickness of the first intralayer lens.

  In the solid-state imaging device of the present invention, each second imaging pixel is formed in a portion around the second in-layer lens on the first planarizing film and transmits the second color light. Each of the third imaging pixels is formed on a portion around the third in-layer lens on the first flattening film and has a third light attenuating layer. It is preferable to have a third light attenuating layer that transmits light of the other color and attenuates light of other colors. With such a configuration, light transmitted obliquely can be attenuated also in the second imaging pixel and the third imaging pixel, so that the occurrence of color mixing can be further reduced.

  In this case, it is preferable that the second light attenuation layer is made of the same material as the second color filter, and the third light attenuation layer is made of the same material as the third color filter.

  Further, the planar dimension of the outer shape of the second light attenuation layer is smaller than or the same as the planar dimension of the second color filter, and the planar dimension of the outer shape of the third light attenuation layer is the third color filter. It is preferable that it is smaller than or the same as the plane dimension.

  The thickness of the second light attenuation layer is preferably smaller than the thickness of the second inner lens, and the thickness of the third light attenuation layer is preferably smaller than the thickness of the third inner lens. .

  A method for manufacturing a solid-state imaging device according to the present invention includes a plurality of first imaging pixels that receive light of a first color and a plurality of light that receives light of a second color, arranged in a matrix on a substrate. A solid-state imaging device manufacturing method including a second imaging pixel and a plurality of third imaging pixels that receive light of a third color, and a plurality of light-receiving units arranged in a matrix on a substrate A step (a) of forming, a step (b) of forming a first planarizing film on a substrate on which a plurality of light receiving portions are formed, and the respective light receiving portions on the first planarizing film. A step (c) of forming a plurality of intra-layer lenses at positions where the first lens is disposed, and a portion around the inner lens corresponding to the light-receiving portion serving as the first imaging pixel on the first planarization film; A step (d) of forming a first light attenuation layer using a material that transmits light of the other colors and attenuates light of other colors; A step (e) of forming a second planarization film covering each inner lens and each first light attenuation layer on the carrier film, and the first imaging pixel on the second planarization film; A first color filter that transmits light of the first color is formed at a position corresponding to the light receiving portion, and a second color is formed at a position corresponding to the light receiving portion serving as the second imaging pixel on the second planarization film. A second color filter that transmits light of the second color and a third color light that transmits light of the third color to a position corresponding to the light receiving unit that becomes the third imaging pixel on the second planarization film. And (f) forming a color filter.

  According to the method for manufacturing a solid-state imaging device of the present invention, the first color light is applied to the region around the inner lens corresponding to the light receiving unit to be the first imaging pixel on the first planarization film. Since the first light attenuating layer is formed using a material that transmits and attenuates light of other colors, a solid having a structure in which light that has been obliquely transmitted through the color filter does not easily enter the light receiving portion. An imaging device can be manufactured. Accordingly, it is possible to easily realize a solid-state imaging device with little color mixing, line shading, and sensitivity variations.

  In the method for manufacturing a solid-state imaging device according to the present invention, the first light attenuation layer is preferably formed of the same material as that of the first color filter.

  In the method for manufacturing a solid-state imaging device of the present invention, the first light attenuation layer is preferably formed by photolithography.

  In the method for manufacturing a solid-state imaging device according to the present invention, light of the second color is transmitted to a portion around the inner lens corresponding to the light receiving unit to be the second imaging pixel on the first planarization film. In addition, the step (g) of forming the second light attenuation layer using a material that attenuates light of another color respectively corresponds to the light receiving portion that becomes the third imaging pixel on the first planarization film. A step (h) of forming a third light attenuating layer on the periphery of the in-layer lens by using a material that transmits the light of the third color and attenuates the light of the other color, respectively. Preferably it is.

  According to the solid-state imaging device according to the present invention, it is possible to realize a color solid-state imaging device that is unlikely to cause color mixing due to light that is obliquely transmitted through the color filter and is less likely to cause a decrease in sensitivity.

(One embodiment)
An embodiment of the present invention will be described with reference to the drawings. 1A to 1C illustrate a solid-state imaging device according to an embodiment, FIG. 1A illustrates a planar arrangement, FIG. 1B illustrates a cross-sectional configuration taken along line Ib-Ib in FIG. ) Shows a cross-sectional structure taken along line Ic-Ic in (a). In FIGS. 1B and 1C, only three pixels are shown.

  As shown in FIG. 1, the solid-state imaging device of the present embodiment includes a first imaging pixel 11A that receives green (G) light, a second imaging pixel 11B that receives red (R) light, and blue (B The third imaging pixels 11 </ b> C that receive the light) are formed in a matrix on the semiconductor substrate 10 so as to form a primary color Bayer array.

  The first imaging pixel 11 </ b> A includes a light receiving unit 12 formed on the semiconductor substrate 10, an in-layer lens 13 formed on the light receiving unit 12, and a first light attenuation formed around the in-layer lens 13. A layer 14A and a first color filter 15A formed on the in-layer lens 13 are included. The second imaging pixel 11B includes a light receiving unit 12 formed on the substrate 10, an inner lens 13 formed on the light receiving unit 12, and a second light attenuation layer formed around the inner lens 13. 14B and a second color filter 15B formed on the in-layer lens 13. The third imaging pixel 11 </ b> C includes a light receiving unit 12 formed on the substrate 10, an inner lens 13 formed on the light receiving unit 12, and a third light attenuation layer formed around the inner lens 13. 14 </ b> C and a third color filter 15 </ b> C formed on the in-layer lens 13.

  Each light receiving unit 12 includes a photodiode 21 formed on the semiconductor substrate 10 and a transfer electrode 22 formed on the substrate 10 adjacent to the photodiode 21 with an insulating film 23 interposed therebetween. .

  The upper and side surfaces of each transfer electrode 22 are covered with a light shielding film 25 and further covered with a first planarizing film 26 made of boron phosphorus silicate glass (BPSG) or the like.

  An intralayer lens 13 that is a convex lens is formed at a position corresponding to each light receiving unit 12 on the first planarizing film 26. In the first imaging pixel, a first light attenuation layer 14A is formed on a portion surrounding the inner lens 13 on the first planarization film 26, and the second light attenuation is performed in the second imaging pixel. A layer 14B is formed, and a third light attenuation layer 14C is formed in the third imaging pixel.

  The first light attenuation layer 14A formed on the first imaging pixel 11A that receives green light is formed of a material that transmits green light, and the second imaging pixel 11B that receives red light. The second light attenuating layer 14B formed in the first is formed of a material that transmits red light, and the third light attenuating layer 14C formed in the third imaging pixel 11C that receives blue light is , Formed of a material that transmits blue light.

  A second planarization film 31 made of, for example, an acrylic transparent resin is formed on the inner lens 13 and the light attenuation layer, and positions corresponding to the respective light receiving portions 12 on the second planarization film 31. Is formed with a color filter. The color filter transmits light received by each imaging pixel and attenuates other light. That is, the first imaging pixel 11A that receives green light is provided with a first color filter 15A that transmits green light, and the second imaging pixel 11B that receives red light has red light. A second color filter 15B that transmits blue light is formed, and a third color filter 15C that transmits blue light is formed in the third imaging pixel 11C that receives blue light.

  A third planarizing film 35 made of, for example, an acrylic transparent resin is formed on each color filter. On the third planarizing film 35, an on-chip is formed at a position corresponding to each light receiving unit 12. A microlens 36 is formed.

  In the solid-state imaging device of the present embodiment, the light attenuation layer and the color filter have the same light transmission characteristics for each imaging pixel. In addition, since the first image pickup pixel 11A, the second image pickup pixel 11B, and the third image pickup pixel 11C are arranged in a Bayer array, the light receiving unit between the image pickup pixels adjacent to each other in the row direction and the column direction. Light of different wavelengths is incident. Accordingly, the light vertically transmitted through the color filter passes through the light attenuation layer having the same light transmission characteristics and enters the light receiving unit 12. However, light that passes through the color filter obliquely and enters the light attenuation layer of the adjacent imaging pixel is attenuated by the light attenuation layer and does not enter the light receiving unit 12.

  For example, the light transmitted obliquely through the second color filter 15B of the second imaging pixel 11B that receives red light is the first light attenuation layer of the first imaging pixel 11A that receives adjacent green light. 14A. The first light attenuating layer 14A attenuates the red light transmitted through the second color filter 15B, so that the light transmitted obliquely through the second color filter 15B is received by the light receiving unit 12 of the first imaging pixel 11A. Not reach. However, when the green light transmitted through the first color filter 15A is incident on the first light attenuation layer 14A, the light is transmitted through the first light attenuation layer 14A and the light receiving unit 12 of the first imaging pixel 11A. To reach. Therefore, it is possible to attenuate only the light that causes the color mixture without attenuating the light originally incident on the light receiving unit 12. For this reason, it is possible to reduce color mixing and sensitivity variation without reducing sensitivity, and to improve line shading.

  Below, the manufacturing method of the solid-state imaging device concerning this embodiment is explained with reference to drawings. 2A to 2C and FIGS. 3A to 3C show the cross-sectional configuration in each manufacturing process of the manufacturing method of the solid-state imaging device according to this embodiment in the order of processes.

  First, as shown in FIG. 2A, a photodiode 21, an insulating film 23, and a transfer electrode 22 are formed on a semiconductor substrate 10 by a known method. Subsequently, after forming the light shielding film 25 covering the transfer electrode 22, the first planarizing film 26 is formed on the substrate 10, and the inner lens 13 is formed on the formed first planarizing film 26. To do.

  Next, as shown in FIG. 2B, a photoresist 51 that transmits green light is applied on the first planarizing film 26 and then pre-baked.

  Next, as shown in FIG. 2C, masking is performed except for the periphery of the in-layer lens 13 formed on the light receiving portion 12 that becomes the first imaging pixel 11A that receives green light, and exposure is performed. .

  Next, as shown in FIG. 3A, the exposed resist is developed to develop a first light attenuating layer that transmits green light around the inner lens 13 on the first imaging pixel 11A. 14A is formed.

  Similarly, a second light attenuating layer 14B that transmits red light is formed around the inner lens 13 on the light receiving unit 12 to be the second imaging pixel 11B, and the third imaging pixel 11C and A third light attenuating layer 14C that transmits blue light is formed around the inner lens 13 on the light receiving unit 12.

  Next, as shown in FIG. 3B, a second method of covering the inner lens 13, the first light attenuation layer 14A, the second light attenuation layer 14B, and the third light attenuation layer 14C by using a known method. After the flattening film 31 is formed, the first color filter 15A that transmits green light, the second color filter 15B that transmits red light, and the blue light are formed on the second flattening film 31. The third color filter 15C that passes through is formed in accordance with the position of each imaging pixel.

  Next, as shown in FIG. 3 (c), a third flat surface that relieves unevenness after the color filter is formed on the first color filter 15A, the second color filter 15B, and the third color filter 15C. A chemical film 35 is formed. Subsequently, the on-chip microlens 36 is formed in accordance with the position of each imaging pixel.

  Note that the order of forming the first light attenuation layer 14A, the second light attenuation layer 14B, and the third light attenuation layer 14C may be arbitrarily changed.

  In addition, it is preferable that the planar dimension of the outer shape of the light attenuation layer is smaller than or equal to the planar dimension of the color filter. The light attenuating layer may be formed by photolithography, and can be formed in an arbitrary plane dimension by changing the design dimension of the photomask.

  In addition, the thickness of the light attenuation layer is preferably thinner than the thickness of the intralayer lens. The attenuation layer may be formed by spin coating, and can be formed to an arbitrary thickness by controlling the number of rotations during spin coating.

  In this embodiment, the color filter and the light attenuation layer are formed using an organic resist, but an inorganic resist or the like may be used. Further, the color filter and the light attenuation layer may be formed of different materials.

  In the present embodiment, the configuration including the on-chip microlens 36 for condensing incident light on each light receiving unit 12 has been described. However, in a solid-state imaging device that does not have the on-chip microlens 36, the same color mixing prevention can be achieved. An effect can be obtained.

(One Modification of One Embodiment)
A modification of one embodiment of the present invention will be described below with reference to the drawings. 4A to 4C are solid-state imaging devices according to a modification, FIG. 4A illustrates a planar arrangement, FIG. 4B illustrates a cross-sectional configuration taken along line Ib-Ib in FIG. ) Shows a cross-sectional structure taken along line IVc-IVc in (a). In FIG. 4, the same components as those of FIG.

  As shown in FIG. 4, in the solid-state imaging device of this modification, the first light attenuation layer 14 </ b> A is formed only in the first imaging pixel 11 </ b> A that receives green light. The most serious problem in the occurrence of color mixing is that light that should be incident on other imaging pixels is incident on the first imaging pixel 11A that receives green light. Therefore, the first color attenuation layer 14A that transmits green light is formed only in the first imaging pixel 11A as in the solid-state imaging device of this modification, and the second color filter 15B that transmits red light is formed. Alternatively, the generation of color mixing is greatly increased by preventing the light transmitted obliquely through the third color filter 15C that transmits blue light from entering the light receiving unit 12 of the first imaging pixel 11A that receives green light. Can be reduced.

  The angle of light incident on the color filter varies depending on the position of the imaging pixel on the substrate 10. Therefore, when the light attenuation layer is not formed, the light that has been obliquely transmitted through the first imaging pixel 11A and the third color filter 15C in which light obliquely transmitted through the second color filter 15B is likely to enter. There is a first imaging pixel 11A that is likely to be incident. Even when the same amount of light is incident due to the characteristics of the color filter, the light passes through the second color filter 15B that transmits red light, and the light passes through the third color filter 15C that transmits blue light. And the amount of light is greatly different. As a result, the first imaging pixel 11A that is likely to receive light obliquely transmitted through the second color filter 15B, and the first imaging pixel 11A that is likely to receive light that is obliquely transmitted through the third color filter 15C. In this case, since the output is apparently different, a large sensitivity unevenness occurs. However, in the solid-state imaging device according to the present modification, the first imaging pixel 11A has the first light attenuation layer 14A that attenuates light other than green, and light from an oblique direction is applied to the first imaging pixel 11A. Since incidence can be suppressed, occurrence of sensitivity unevenness due to such a cause can be prevented.

  In the embodiment and the modification, the first imaging pixel 11A that receives green light, the second imaging pixel 11B that receives red light, and the third imaging pixel 11C that receives blue light are arranged in a checkered pattern. Although an example of the primary color Bayer arrangement performed is shown, the same effect can be obtained also in the case of a stripe arrangement in which the first imaging pixel 11A, the second imaging pixel 11B, and the third imaging pixel 11C are arranged in a stripe shape. be able to.

  The solid-state imaging device and the method for manufacturing the same according to the present invention can realize a color solid-state imaging device that is unlikely to cause color mixing due to light that is obliquely transmitted through the color filter and that is less susceptible to a decrease in sensitivity. It is useful as a manufacturing method thereof.

(A)-(c) shows the solid-state imaging device which concerns on one Embodiment of this invention, (a) is a top view, (b) is sectional drawing in the Ib-Ib line | wire of (a), (c) is sectional drawing in the Ic-Ic line | wire of (a). (A)-(c) is sectional drawing which shows the manufacturing method of the solid-state imaging device concerning one Embodiment of this invention in order of a process. (A)-(c) is sectional drawing which shows the manufacturing method of the solid-state imaging device concerning one Embodiment of this invention in order of a process. (A)-(c) shows the solid-state imaging device concerning the modification of one Embodiment of this invention, (a) is a top view, (b) is sectional drawing in the IVb-IVb line | wire of (a). (C) is a sectional view taken along line IVc-IVc in (a).

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Semiconductor substrate 11A 1st image pick-up pixel 11B 2nd image pick-up pixel 11C 3rd image pick-up pixel 12 Light-receiving part 13 Inner lens 14A 1st light attenuation layer 14B 2nd light attenuation layer 14C 3rd light attenuation layer 15A First color filter 15B Second color filter 15C Third color filter 21 Photodiode 22 Transfer electrode 23 Insulating film 25 Light-shielding film 26 First planarizing film 31 Second planarizing film 35 Third planarizing film 36 On-chip micro lens

Claims (14)

A plurality of first imaging pixels that are arranged in a matrix on the substrate and receive light of the first color, a plurality of second imaging pixels that receive light of the second color, and a third color A plurality of third imaging pixels that receive light;
Each of the first imaging pixels is formed with a first light-receiving portion formed on the substrate and a first planarization film at a position corresponding to the first light-receiving portion on the substrate. The first in-layer lens and the first planarizing film are formed on the periphery of the first in-layer lens and transmit light of the first color and light of other colors. A first light attenuating layer for attenuating light, a first planarizing film formed on the inner lens and the first light attenuating layer, and transmitting the first color light. A color filter, and
Each of the second imaging pixels is formed by interposing the first planarizing film at a position corresponding to the second light receiving part formed on the substrate and the second light receiving part on the substrate. And a second color filter formed on the second intra-layer lens with the second planarizing film interposed therebetween and transmitting the second color light. Have
Each of the third imaging pixels is formed by interposing the first planarization film at a position corresponding to the third light receiving portion formed on the substrate and the third light receiving portion on the substrate. And a third color filter formed on the third intralayer lens with the second planarizing film interposed therebetween and transmitting the third color light. A solid-state imaging device comprising:   The solid-state imaging device according to claim 1, wherein the first light attenuating layer is made of the same material as the first color filter. The light of the first color is green, the light of the second color is red, the light of the third color is blue,
3. The solid according to claim 1, wherein an arrangement of the first imaging pixel, the second imaging pixel, and the third imaging pixel on the substrate forms a primary color Bayer array as a whole. Imaging device. The light of the first color is green, the light of the second color is red, the light of the third color is blue,
3. The solid according to claim 1, wherein an arrangement of the first imaging pixel, the second imaging pixel, and the third imaging pixel on the substrate constitutes a primary color stripe arrangement as a whole. Imaging device.   5. The solid according to claim 1, wherein a planar dimension of an outer shape of the first light attenuating layer is smaller than or equal to a planar dimension of the first color filter. Imaging device.   6. The solid-state imaging device according to claim 1, wherein a thickness of the first light attenuating layer is thinner than a thickness of the first intralayer lens. Each of the second imaging pixels is formed on a portion around the second in-layer lens on the first planarizing film, transmits the second color light, and emits the other color light. A second light attenuation layer that attenuates
Each of the third imaging pixels is formed in a portion around the third in-layer lens on the first planarizing film, transmits the third color light, and emits light of other colors. The solid-state imaging device according to claim 1, further comprising a third light attenuation layer that attenuates the light intensity. The second light attenuation layer is made of the same material as the second color filter,
The solid-state imaging device according to claim 7, wherein the third light attenuation layer is made of the same material as the third color filter. The planar dimension of the outer shape of the second light attenuation layer is smaller than or the same as the planar dimension of the second color filter;
9. The solid-state imaging device according to claim 7, wherein a planar dimension of an outer shape of the third light attenuation layer is smaller than or equal to a planar dimension of the third color filter. The thickness of the second light attenuation layer is thinner than the thickness of the second intra-layer lens,
10. The solid-state imaging device according to claim 7, wherein a thickness of the third light attenuating layer is thinner than a thickness of the third in-layer lens. A plurality of first imaging pixels that receive light of the first color, a plurality of second imaging pixels that receive light of the second color, and a third color, which are arranged in a matrix on the substrate A method of manufacturing a solid-state imaging device comprising a plurality of third imaging pixels that receive the light of
A step (a) of forming a plurality of light receiving portions in a matrix on the substrate;
A step (b) of forming a first planarizing film on the substrate on which the plurality of light receiving portions are formed;
A step (c) of forming a plurality of in-layer lenses at positions corresponding to the respective light receiving portions on the first planarizing film;
The light of the first color and the light of the other color are transmitted to a portion around the inner lens corresponding to the light receiving unit to be the first imaging pixel on the first planarization film. (D) forming each of the first light attenuation layers using a material that attenuates;
A step (e) of forming a second planarization film covering the inner lens and the first light attenuation layer on the first planarization film;
Forming a first color filter that transmits light of the first color on the second planarization film at a position corresponding to a light-receiving unit serving as the first imaging pixel, and performing the second planarization; Forming a second color filter that transmits light of the second color at a position on the film corresponding to the light receiving unit to be the second imaging pixel, and forming the second color filter on the second planarizing film; And a step (f) of forming a third color filter that transmits the light of the third color at a position corresponding to the light receiving portion that is the third imaging pixel. Method.   12. The method of manufacturing a solid-state imaging device according to claim 11, wherein the first light attenuation layer is formed of the same material as that of the first color filter.   13. The method for manufacturing a solid-state imaging device according to claim 11, wherein the first light attenuation layer is formed by photolithography. The light of the second color is transmitted through the portion around the inner lens corresponding to the light receiving unit to be the second imaging pixel on the first planarizing film, and the light of the other color is transmitted. (G) forming each of the second light attenuation layers using a material that attenuates;
The light of the third color is transmitted through the portion around the inner lens corresponding to the light receiving unit to be the third imaging pixel on the first planarization film, and the light of the other color is transmitted. The method of manufacturing a solid-state imaging device according to claim 11, further comprising a step (h) of forming a third light attenuation layer using a material that attenuates. .

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