JP2007294909A - Plasma processing equipment - Google Patents

Abstract

An amount of high-frequency current passing through a plasma between upper and lower electrodes is accurately detected.
A probe for detecting a time change amount of a magnetic field around a central axis of a processing space is attached in a processing container of a plasma etching processing apparatus. The probe 40 is formed in a coil shape, and the axis of the coil 40a is oriented in the circumferential direction of the central axis of the processing space K. The probe 40 is provided in the vicinity of the side wall surface 2 of the processing container 2. The probe 40 detects the induced electromotive force generated in the coil 40a as a time change amount of the magnetic field, and the computer 51 calculates a high-frequency current amount from the induced electromotive force according to a predetermined calculation principle.
[Selection] Figure 1

Description

  The present invention relates to a plasma processing apparatus that generates a plasma in a processing container to process a substrate.

  For example, plasma processing is widely used in substrate processing such as etching and film formation in manufacturing processes of semiconductor devices and liquid crystal display devices.

  The plasma processing is usually performed by a plasma processing apparatus. In this plasma processing apparatus, electrodes that are vertically opposed to each other are provided in a processing container. For example, high-frequency power is supplied to a lower electrode on which a substrate is placed, and plasma is generated between the lower electrode and the upper electrode to generate a substrate. Is being processed.

  In the above plasma treatment, a high frequency current flows in the plasma from the lower electrode to the upper electrode by supplying high frequency power. This high-frequency current contributes to plasma generation and has a close relationship with plasma states such as plasma density and self-bias (Vdc), and is an important factor in evaluating the processing state of the substrate. For example, when measuring the amount of high-frequency current flowing from the lower electrode to the upper electrode, it is conceivable to attach a current sensor between the lower electrode and the matching circuit, that is, on the output side of the matching circuit. For reference, in order to grasp the degree of peeling (consumption level) due to sputtering of the lower electrode, a circuit for measuring current is provided between the lower electrode and the matching circuit, and the degree of consumption is grasped based on the measured value. The technique has already been disclosed (see Patent Document 1).

JP 2002-43402 A

  However, when the current sensor is provided on the output side of the matching circuit as described above, the measurement point of the high-frequency current amount is away from the plasma, and power is consumed under the influence of the impedance of the processing container. However, the amount of high-frequency current passing through the plasma differs from the amount of current by the current sensor. For this reason, it has been difficult to accurately evaluate the processing state of the substrate from the measured amount of high-frequency current. In particular, at a high frequency of about several tens of MHz used for the etching process, the difference between the amount of current at the measurement point on the output side of the matching circuit and the amount of current that actually enters the plasma often becomes large. I could not know the condition accurately.

  On the other hand, in recent years, as the design rule is further scaled down, the electrode is used to meet the demands for CD (Critical Dimension) uniformity of etching processing results and the etching of resist films with low plasma resistance such as ArF resist. Strict adjustment of the power value of the high frequency power to be applied is required.

  However, ceramic insulators and the like have been used inside the plasma processing apparatus, but this insulator has a solid difference one by one with respect to the power loss of the high frequency power. Even if the value is adjusted strictly, there is a possibility that a difference in processing results (machine difference) occurs between apparatuses when the same processing is performed by a plurality of the same plasma processing apparatuses.

  The present invention has been made in view of such a point, and an object thereof is to more accurately detect the amount of high-frequency current passing through the plasma in the processing container. Another object of the present invention is to reduce the difference in processing results between apparatuses when the same processing is performed by a plurality of the same plasma processing apparatuses.

  In order to achieve the above object, the present invention has a high-frequency electrode facing up and down in a processing vessel, and supplies high-frequency power to at least one of the high-frequency electrodes to generate plasma in the processing vessel. A plasma processing apparatus for processing a substrate, wherein the probe is installed in the processing container and detects a temporal change amount of a magnetic field in a circumferential direction with respect to a central axis in a vertical direction of the processing container, and the probe And a calculation unit that calculates the amount of high-frequency current that passes through the plasma by the supply of the high-frequency power based on the detection result of the time change amount of the magnetic field.

  According to the present invention, the amount of time change of the magnetic field actually generated around the central axis in the processing container can be detected, and the amount of high-frequency current can be calculated from the amount of time change of the magnetic field. The amount of high-frequency current passing through can be accurately detected. Therefore, for example, the processing state of the substrate can be accurately evaluated.

  The probe may be formed in a coil shape, and the axis of the coil may be directed in the circumferential direction around the central axis of the processing container.

  The probe may detect an induced electromotive force generated in the coil as a time change amount of the magnetic field, and the calculation unit may calculate the high-frequency current amount from the induced electromotive force.

  The probe may be provided at a height between the upper and lower high-frequency electrodes.

  The probe may be provided at the same height as the substrate held by one of the upper and lower high-frequency electrodes in the processing container.

  The probe may be provided outside a substrate held by any one of the upper and lower high-frequency electrodes in the processing container.

  The probe may be provided at a position of 15 to 25 mm from a side wall portion of the processing container.

  The probe may be covered with an insulating cover.

  The probe may be embedded in a member facing the generated plasma.

  The probe may be embedded in the wall of the processing container.

  The probe may be embedded in an annular member surrounding the outer periphery of the substrate held by one of the upper and lower high-frequency electrodes in the processing container.

  The probe may be configured to be movable up and down within the processing container.

  The plasma processing apparatus detects a time variation amount of the magnetic field and calculates the high-frequency current amount during processing of the substrate, and based on the calculated high-frequency current amount and a preset high-frequency current amount threshold value. A control unit for stopping the processing of the substrate may be provided.

  The above-described plasma processing apparatus may include an adjustment unit that adjusts the output of the high-frequency power based on the calculated high-frequency current amount.

  The above-described plasma processing apparatus may have an analysis unit that decomposes the detected temporal change amount of the magnetic field into each frequency component contained therein.

  According to another aspect of the present invention, there is provided a substrate having high-frequency electrodes facing vertically in a processing vessel, supplying high-frequency power to at least one of the high-frequency electrodes to generate plasma in the processing vessel, and And a detection unit for detecting a high-frequency current amount supplied to the processing container by the supply of the high-frequency power, and the high-frequency current amount detected by the detection unit is constant. And a control unit for controlling the high-frequency power.

  The detection unit may be a probe set in the processing container.

  The plasma processing apparatus may include a high frequency power source that supplies high frequency power to the high frequency electrode, and the detection unit may be installed at an output portion of the high frequency power source.

  The plasma processing apparatus includes: a high-frequency power source that supplies the high-frequency power to the high-frequency electrode; and a matching unit between the high-frequency electrode and the high-frequency power source, and the detection unit includes the matching unit You may make it install in the output part.

  According to another aspect of the present invention, there is provided a substrate having high-frequency electrodes facing vertically in a processing vessel, supplying high-frequency power to at least one of the high-frequency electrodes to generate plasma in the processing vessel, and A setting storage unit in which a plurality of setting values for performing the plasma processing are stored in advance, and the setting storage unit is a value of a high-frequency current amount as the setting value. It is characterized by having.

  According to the present invention, since the amount of high-frequency current passing through the generated plasma can be detected accurately, the processing state of the substrate can be grasped more accurately by the amount of high-frequency current. Further, according to the present invention, since the plasma processing is controlled using the amount of high-frequency current, the difference in processing results between apparatuses when the same processing is performed by a plurality of the same plasma processing apparatuses can be reduced.

  Hereinafter, preferred embodiments of the present invention will be described. FIG. 1 is an explanatory view of a longitudinal section showing an outline of a configuration of a plasma etching apparatus 1 as a plasma processing apparatus according to the present invention. In addition, in this specification and drawing, about the component which has the substantially same function structure, duplication description is abbreviate | omitted by attaching | subjecting the same code | symbol.

  As shown in FIG. 1, the plasma etching apparatus 1 includes, for example, a substantially cylindrical processing container 2. A processing space K is formed inside the processing container 2. The processing container 2 is grounded.

  For example, a cylindrical electrode support 11 is provided at the bottom of the central portion in the processing container 2 with an insulating plate 10 interposed therebetween. On the electrode support 11, a lower electrode 12 is provided as a high-frequency electrode that also serves as a mounting table on which the substrate W is mounted. The center of the upper surface of the lower electrode 12 protrudes in a columnar shape, and the substrate W is held by the protruding portion 12a. The protruding portion 12a is an electrostatic chuck. Around the protrusion 12a of the lower electrode 12, a focus ring 13 made of quartz as an annular member is provided.

  For example, a substantially disk-shaped upper electrode 20 is attached to the ceiling portion of the processing container 2 facing the lower electrode 12. On the lower surface of the upper electrode 20, for example, a large number of gas discharge holes 20a are formed. The gas discharge hole 20 a communicates with a gas supply source 23 through a gas supply pipe 22 connected to the upper surface of the upper electrode 20. The gas supply source 23 stores a processing gas for the etching process. The processing gas introduced into the upper electrode 20 from the gas supply pipe 22 is supplied to the processing space K from the plurality of gas discharge holes 20a.

  A high frequency power supply 31 is electrically connected to the lower electrode 12 via a matching unit 30. The high frequency power supply 31 can output high frequency power having a frequency of, for example, 40 MHz or more, for example, 60 MHz. The matching unit 30 can control the impedance with respect to, for example, a fundamental wave or a harmonic wave of high-frequency power. In addition, control of operation | movement of the high frequency power supply 31 and the matching device 30 is performed by the control part 60 mentioned later.

  A probe 40 is installed in the vicinity of the side wall 2a of the processing container 2. For example, as shown in FIG. 2, the probe 40 is constituted by a circular two-turn coil 40 a having a diameter of about 3 mm. The direction of the axis of the coil 40 a is directed to the circumferential direction θ around the central axis in the vertical direction of the processing container 2. In other words, the coil 40a is installed such that the coil surface is at right angles to both the surface of the substrate W on the lower electrode 12 and the inner surface of the side wall 2a of the processing container 2 as shown in FIG. Yes. As a result, the magnetic flux in the circumferential direction θ generated in the processing space K passes through the coil 40a, and the probe 40 converts the induced electromotive force induced in the coil 40a by the change in the magnetic flux into the time variation of the magnetic field in the circumferential direction θ. Can be detected as

  The probe 40 is installed, for example, outside the substrate W on the lower electrode 12 and at the same height as the substrate W. For example, the probe 40 is installed at a position where the lower end of the coil 40 a is 5 to 10 mm higher than the surface of the substrate W. Moreover, the probe 40 is installed in the vicinity of the side wall 2a as shown in FIG. 3 and at a position of 15 to 25 mm, more preferably 20 mm from the inner surface of the side wall 2a. The probe 40 is covered with a cover 41 made of, for example, quartz or ceramics, which is fixed to the side wall 2a.

  As shown in FIG. 1, the coil 40a of the probe 40 is connected to an analyzer box 50 as an analysis unit. The analyzer box 50 can decompose the amount of time variation (induced electromotive force) of the magnetic field detected by the probe 40 into each frequency component contained therein.

  The analyzer box 50 is connected to a computer 51 as a calculation unit. The computer 51 can calculate the amount of high-frequency current passing through the plasma in the processing space K from the induced electromotive force of each frequency component decomposed by the analyzer box 50 using the calculation principle described later, and can accumulate such information. . The high-frequency current amount here is the total amount of current passing through the plasma region P.

Here, the calculation principle of the high-frequency current amount Az of the high-frequency current Iz will be described with reference to FIG. FIG. 4 schematically shows the inside of the processing vessel 2 having the plasma region P. In FIG. 4, r is the distance from the central axis of the processing container 2, H _θ (r) is the strength of the magnetic field in the circumferential direction θ, and V (r) is the induced electromotive force generated in the coil 40a. The high frequency current Iz is expressed by the following formula (1) using the high frequency current amount Az.

It can be expressed as From Ampere's law, the following formula (2)

Holds. If the magnetic flux is Φ, the following equation (3) is given by Faraday's law.

Holds. When N is the number of turns of the coil 40a, S is the area of the coil surface, μ ₀ is the magnetic permeability, and the equations (1) and (2) are substituted into the equation (3) and transformed,

It becomes. Therefore,

Thus, the high frequency current amount Az is calculated from the induced electromotive force V (r) generated in the coil 40a.

  The computer 51 can output the accumulated information of the calculated high-frequency current amount Az to the control unit 60 of the plasma etching apparatus 1 shown in FIG. For example, the control unit 60 compares the output high-frequency current amount Az with a preset threshold value, and if the value of the high-frequency current amount Az exceeds the threshold value, outputs an error and stops the processing of the substrate W. Can be made.

  An exhaust pipe 70 communicating with an exhaust mechanism (not shown) is connected to the lower portion of the processing container 2. By evacuating the processing container 2 through the exhaust pipe 70, the processing space K can be reduced to a predetermined pressure.

  Next, the operation of the plasma etching apparatus 1 configured as described above will be described.

  When performing an etching process in the plasma etching apparatus 1, first, as shown in FIG. 1, the substrate W is first carried into the processing container 2 and placed on the lower electrode 12. Exhaust is performed from the exhaust pipe 70, the inside of the processing container 2 is decompressed, and a predetermined processing gas is supplied from the gas discharge hole 20a. Next, high frequency power for plasma generation is supplied to the lower electrode 12 by the high frequency power supply 31. As a result, a high frequency voltage is applied between the lower electrode 12 and the upper electrode 20, plasma is generated in the processing space K between the lower electrode 12 and the upper electrode 20 in the processing container 2, and a plasma region P is formed. Is done. The plasma generates active species and ions from the processing gas, and the surface film of the wafer W is etched. After the etching is performed for a predetermined time, the supply of high-frequency power and the supply of processing gas are stopped, the wafer W is unloaded from the processing container 2, and a series of etching processes is completed.

  When the plasma etching apparatus 1 detects the high-frequency current amount Az that passes through the plasma region P, first, the amount of time change of the magnetic field in the circumferential direction θ of the processing space K is detected by the probe 40 during the generation of plasma. The At this time, the magnetic flux Φ in the circumferential direction θ of the processing space K passes through the coil 40a of the probe 40, and an induced electromotive force V (r) is generated in the coil 40a due to the change of the magnetic flux Φ in the coil 40a. The induced electromotive force V (r) is detected by the probe 40 as a time change amount of the magnetic field. The detection information of the induced electromotive force V (r) is input to the analyzer box 50. In the analyzer box 50, the detected induced electromotive force V (r) is a frequency component such as a fundamental wave or a harmonic of high frequency power. Is broken down into The induced electromotive force V (r) decomposed into each frequency component is sent to the computer 51, and the computer 51 calculates the high-frequency current amount Az using the calculation principle such as the above equation (4).

  The calculated high-frequency current amount Az is output to the control unit 60, for example, and is compared with a threshold set in advance for each frequency component, for example, and is determined to be normal if it is within the threshold, and if it exceeds the threshold For example, an error is output and the processing of the substrate W is stopped. Information on the high-frequency current amount Az is accumulated in the control unit 60 and used as information for evaluating the processing state of the substrate W.

  According to the above embodiment, since the probe 40 is disposed in the processing container 2, the high-frequency current amount Az passing through the plasma can be directly detected. Therefore, a more accurate high-frequency current amount Az can be detected, and for example, the processing state of the substrate W can be more accurately evaluated based on the high-frequency current amount Az.

  Further, since the probe 40 is formed in a coil shape and the axis of the coil 40a is oriented in the circumferential direction θ of the processing space K, the magnetic flux Φ is passed through the coil 40a, and an induced electromotive force is applied to the coil 40a by electromagnetic induction. As a result, the time variation of the magnetic field in the circumferential direction θ can be detected as the induced electromotive force V (r).

  Since the probe 40 is covered with the cover 41 made of an insulating quartz or ceramic, corrosion of the probe 40 due to plasma can be prevented.

  Since the probe 40 is provided outside the substrate W of the processing container 2 and in the vicinity of the side wall 2a, the processing of the substrate W can be appropriately performed without disturbing the processing of the substrate W in the processing space K. .

  The probe 40 was provided at a position of 15 mm to 25 mm from the inner surface of the side wall 2a of the processing container 2. FIG. 5 is a graph showing the amount of current detected by the probe 40 when the distance between the probe 40 and the side wall 2a is changed under the same conditions. From the graph of FIG. 5, it can be seen that when the probe 40 is at a distance of 15 mm to 25 mm from the side wall 2a, the detected current amount increases. Therefore, the sensitivity of the probe 40 can be optimized by positioning the probe 40 within the range of 15 mm to 25 mm from the side wall 2a.

  In the above embodiment, since the probe 40 is arranged at the same height as the substrate W, it is possible to detect the high-frequency current amount Az at a position immediately above the substrate W that most affects the etching process.

  In the above embodiment, when the high-frequency current amount Az exceeds the threshold by the control unit 60, the processing of the substrate W is stopped, so that it is possible to cope with an abnormality in the processing state of the substrate W at an early stage. It is possible to prevent a large number of defective substrates W from being manufactured.

  The analyzer box 50 decomposes the induced electromotive force V (r) output from the probe 40 into each frequency component such as a fundamental wave and a harmonic wave of the high frequency power. The high-frequency current amount Az can be calculated. For this reason, the plasma state of the processing space K can be grasped in more detail, and the processing state of the substrate W can be evaluated.

  Note that the impedance to the fundamental wave and the harmonics in the circuit on the lower electrode 2 side may be controlled based on the high-frequency current amounts Az of the fundamental wave and the harmonics decomposed by the analyzer box 50. In this case, for example, the control unit 60 controls the impedance of the fundamental wave and the harmonic using the matching unit 30 based on the calculated high-frequency current amount Az of the fundamental wave and the harmonic. By doing so, the fundamental wave component and the harmonic component of the high-frequency current in the plasma can be controlled, and the plasma state and the processing state of the substrate W can be adjusted appropriately.

  The control unit 60 described in the above embodiment may adjust the output of the high frequency power supply 31 based on the input high frequency current amount Az, for example. In this case, the control unit 60 functions as an adjustment unit. For example, when the high-frequency current amount Az is lower than the set value, the output of the high-frequency power source 31 is increased, and when the high-frequency current amount Az is higher than the set value, the output of the high-frequency power source 31 is decreased. Thus, the high-frequency current amount Az may be returned to the allowable range. By doing so, the substrate W can be processed in a constant plasma state.

  In the above embodiment, the probe 40 is attached to the side wall 2a of the processing container 2, but the probe 40 may be embedded in the side wall 2a as shown in FIG. In this case, for example, a space 80 is formed in the side wall 2 a, and the probe 40 is installed in the space 80. By doing so, since the probe 40 does not protrude into the processing space K in the processing container 2, the plasma in the processing space K is not affected by the probe 40. Further, since the probe 40 is protected by the side wall portion 2a, corrosion of the probe 40 by plasma can be prevented. In this case, the amount of current detected by the probe 40 may be decreased as shown in FIG. 5 described above. In this case, for example, the amount of decrease is previously taken into account, and the high-frequency current amount Az is evaluated. You may make it do.

  When the material of the focus ring 13 is a dielectric, the probe 40 may be embedded inside the focus ring 13 around the substrate W as shown in FIG. In such a case, for example, a space 90 is formed in the focus ring 13, and the probe 40 is installed in the space 90. Also in this case, since the probe 40 does not protrude into the processing space K in the processing container 2, the plasma in the processing space K is not affected. In addition, since the probe 40 is protected by the focus ring 13, corrosion of the probe 40 due to plasma can be prevented. Furthermore, since the position of the probe 40 is close to the surface of the substrate W, the plasma state immediately above the substrate W that most affects the etching process can be detected more accurately.

  Note that the probe 40 is not limited to the side wall 2a and the focus ring 13, but other dielectric members facing the plasma region P such as a window (not shown) for viewing the inside of the processing chamber 2 and the upper electrode 20. It may be embedded in.

  In the above embodiment, the probe 40 is fixed to the side wall 2a. However, the probe 40 may be movable in the vertical direction. For example, as shown in FIG. 8, a rail 100 extending in the vertical direction may be provided on the side wall 2 a of the processing container 2, and the probe 40 and its cover 41 may be attached to a slider 101 that moves along the rail 100. When detecting the high-frequency current amount Az, the probe 40 is moved up and down to detect the time change amount of the magnetic field at a plurality of locations in the vertical direction. By doing so, for example, the vertical distribution of the high-frequency current amount Az in the plasma region P can be known. For example, the high-frequency current amount Az at two upper and lower locations is compared, and if the upper-side high-frequency current amount Az is small, it can be confirmed that the high-frequency current Iz has flowed out between the two detection positions. Thus, the flow of the high-frequency current Iz in the plasma region P can be known, and useful information for evaluating the plasma state can be obtained.

  In the above embodiment, the control unit 60 may control the high-frequency power applied to the electrodes so that the amount of high-frequency current detected by the detection unit is constant. In such a case, for example, the high-frequency current amount Az detected by the probe 40 is output to the control unit 60 as described above, and the control unit 60 sets the high-frequency power supply so that the high-frequency current amount Az becomes a predetermined constant value. 31 output is controlled. By doing so, for example, even when the same processing is performed in a plurality of the same plasma etching apparatuses 1, the same processing result can be obtained in each apparatus, so that the difference in processing results between apparatuses can be reduced.

  In the above example, the detection unit that detects the amount of high-frequency current is not limited to the probe 40, and may be a current sensor that detects a current value in the circuit. In such a case, for example, the current sensor 110 may be provided at the output portion of the high-frequency power supply 31 as shown in FIG. 9, or may be provided at the output portion of the matching unit 30 as shown in FIG.

  In the above embodiment, for example, the control unit 60 of the plasma etching apparatus 1 is provided with a setting storage unit 60a in which a plurality of setting values for performing plasma processing are stored in advance as shown in FIG. The setting storage unit 60a may have a value of a high-frequency current amount as the setting value. In this case, since the value of the high-frequency current amount is set as the plasma processing parameter, the plasma processing can be controlled so that the high-frequency current amount becomes a desired value. As a result, even when the same processing is performed by, for example, a plurality of the same plasma etching apparatuses 1, the same processing result can be obtained in each apparatus, so that the difference in processing results between apparatuses can be reduced.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It will be apparent to those skilled in the art that various changes or modifications can be made within the scope of the ideas described in the claims, and these are naturally within the technical scope of the present invention. It is understood that it belongs. For example, the number of turns of the coil 40a of the probe 40 is not limited to two, but may be one or three or more. The shape of the coil 40a may not be circular but may be rectangular. In the above embodiment, the high frequency power is supplied to the lower electrode 12, but the high frequency power may be supplied to the upper electrode 20. Further, high frequency power may be supplied to both the lower electrode 12 and the upper electrode 20. In the above embodiment, the present invention is applied to the plasma etching apparatus 1, but the present invention can also be applied to a plasma processing apparatus that performs substrate processing other than etching processing, for example, film formation processing. The substrate processed by the plasma processing apparatus of the present invention may be any one of a semiconductor wafer, an organic EL substrate, a substrate for FPD (flat panel display), and the like.

  The present invention is useful in accurately detecting the amount of high-frequency current passing through plasma in a substrate plasma processing apparatus.

It is explanatory drawing of the longitudinal cross-section which shows the outline of a structure of the plasma etching apparatus concerning this Embodiment. It is a schematic diagram of the coil of a probe. It is explanatory drawing which shows the installation position of a probe. It is a schematic diagram of the processing space for calculating the amount of high frequency current. It is a graph which shows the relationship between the distance from the side wall part of a probe, and the detected electric current amount in the position. It is explanatory drawing of the longitudinal cross-section which shows the outline of a structure of the plasma etching apparatus at the time of providing a probe in a side wall part. It is explanatory drawing of the longitudinal cross-section which shows the outline of a structure of the plasma etching apparatus at the time of providing a probe in a focus ring. It is explanatory drawing of the longitudinal cross-section which shows the outline of a structure of the plasma etching apparatus at the time of making a probe movable up and down. It is explanatory drawing which shows the outline of a structure of the plasma etching apparatus at the time of providing a detection part in the output site | part of a high frequency power supply. It is explanatory drawing which shows the outline of a structure of the plasma etching apparatus at the time of providing a detection part in the output site | part of a matching device. It is explanatory drawing which shows the outline of a structure of the plasma etching apparatus in case a control part has a setting memory | storage part.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Plasma etching apparatus 2 Processing container 12 Lower electrode 20 Upper electrode 40 Probe 40a Coil 60 Control part P Plasma area K Processing space W Substrate

Claims (20)

A plasma processing apparatus having a high-frequency electrode facing vertically in a processing container, supplying high-frequency power to at least one of the high-frequency electrodes to generate plasma in the processing container, and processing a substrate. And
A probe that is installed in the processing container and detects the amount of time change of the magnetic field in the circumferential direction with respect to the central axis in the vertical direction of the processing container;
A plasma processing apparatus, comprising: a calculation unit that calculates a high-frequency current amount that passes through the plasma by the supply of the high-frequency power based on a detection result of the time change amount of the magnetic field by the probe. The plasma processing apparatus according to claim 1, wherein the probe is formed in a coil shape, and an axis of the coil is oriented in the circumferential direction around a central axis of the processing container. The probe detects an induced electromotive force generated in the coil as a time change amount of the magnetic field,
The plasma processing apparatus according to claim 2, wherein the calculation unit calculates the high-frequency current amount from the induced electromotive force. The plasma processing apparatus according to claim 1, wherein the probe is provided at a height between the upper and lower high-frequency electrodes. 5. The plasma according to claim 1, wherein the probe is provided at a height similar to a substrate held by any one of the upper and lower high-frequency electrodes in the processing container. Processing equipment. The plasma processing apparatus according to claim 1, wherein the probe is provided outside a substrate held by any one of upper and lower high-frequency electrodes in the processing container. The plasma processing apparatus according to claim 6, wherein the probe is provided at a position of 15 to 25 mm from a side wall portion of the processing container. The plasma processing apparatus according to claim 1, wherein the probe is covered with an insulating cover. The plasma processing apparatus according to claim 1, wherein the probe is embedded in a member facing the generated plasma. The plasma processing apparatus according to claim 9, wherein the probe is embedded in a wall portion of the processing container. The plasma processing apparatus according to claim 9, wherein the probe is embedded in an annular member surrounding an outer periphery of a substrate held by any one of upper and lower high-frequency electrodes in the processing container. The plasma processing apparatus according to claim 1, wherein the probe is configured to be movable up and down in the processing container. Detection of the amount of time variation of the magnetic field and calculation of the high-frequency current amount are performed during processing of the substrate, and processing of the substrate is stopped based on the calculated high-frequency current amount and a preset threshold value of the high-frequency current amount The plasma processing apparatus according to claim 1, further comprising a control unit. The plasma processing apparatus according to claim 1, further comprising an adjustment unit that adjusts an output of the high-frequency power based on the calculated amount of the high-frequency current. The plasma processing apparatus according to claim 1, further comprising an analysis unit that decomposes the detected temporal change amount of the magnetic field into each frequency component included therein. A plasma processing apparatus having a high-frequency electrode facing vertically in a processing container, supplying high-frequency power to at least one of the high-frequency electrodes to generate plasma in the processing container, and processing a substrate. And
A detection unit for detecting a high-frequency current amount supplied to the processing container by the supply of the high-frequency power;
And a control unit that controls the high-frequency power so that the amount of the high-frequency current detected by the detection unit is constant. The plasma processing apparatus according to claim 16, wherein the detection unit is a probe set in the processing container. A high frequency power source for supplying high frequency power to the high frequency electrode;
The plasma processing apparatus according to claim 16, wherein the detection unit is installed at an output portion of the high-frequency power source. A high-frequency power source for supplying the high-frequency power to the high-frequency electrode, and a matching unit between the high-frequency electrode and the high-frequency power source,
The plasma processing apparatus according to claim 16, wherein the detection unit is installed at an output portion of the matching unit. A plasma processing apparatus having a high-frequency electrode facing vertically in a processing container, supplying high-frequency power to at least one of the high-frequency electrodes to generate plasma in the processing container, and processing a substrate. And
A setting storage unit in which a plurality of setting values for performing the plasma processing are stored in advance;
The plasma processing apparatus, wherein the setting storage unit has a value of a high-frequency current amount as the setting value.

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