JP2007279096A - Liquid crystal device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a liquid crystal device that prevents electrical contacts between a heating heater and wiring of a TFT substrate and can rapidly heat a liquid crystal, when the heating heater is incorporated into the TFT substrate. <P>SOLUTION: The liquid crystal device 1 has a lower substrate 2, connected to IC chips IC<SB>1</SB>, IC<SB>2</SB>, by connecting TFT at an intersection point wired in a matrix form by a plurality of gate lines 6 and source lines 7, and deriving ends of each wiring out of a seal region of prescribed width; and an upper substrate 3 arranged opposite to the lower substrate. The upper and lower substrates are laminated and a frame-like sealing member is interposed along the seal region of the lower substrate, and a space made to be laminated is filled with the liquid crystal 5. The liquid crystal device comprises forming a heater layer 9 for heating the liquid crystal on the surface of the lower substrate, and further forming heater removing regions 9A, 9B removing the heater layer on a part for three-dimensionally intersecting at least one selected from the seal region, the gate line and the source line. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

The present invention relates to a liquid crystal device, and more particularly, to a liquid crystal device in which a heater for heating liquid crystal is incorporated.

In recent years, for example, car navigation systems and televisions are mounted on automobiles, and liquid crystal display panels that can be reduced in size, weight, thickness, and have low power consumption are often used as these displays. This liquid crystal display panel uses a pair of glass substrates, and these substrates are bonded together with a frame-shaped sealing member interposed therebetween, whereby liquid crystal is formed in a space formed by the pair of glass substrates and the sealing member. It has an enclosed configuration. However, this liquid crystal has the property that its operating characteristics change depending on the ambient temperature. Especially when the ambient temperature is low, for example, minus 10 ° C. or less, the response speed becomes extremely slow and image distortion occurs. There is a problem that the quality is degraded.

Therefore, the conventional liquid crystal display panel employs a method of heating the liquid crystal by attaching a heater to the panel (see, for example, Patent Documents 1 and 2 below).

In each of the liquid crystal display devices described in Patent Documents 1 and 2 below, a planar heater made of a transparent material separate from the liquid crystal display panel is prepared in advance, and this heater is attached to the display panel.

Also, a liquid crystal display panel in which a heater is directly incorporated is known (for example, see Patent Document 3 below). 9 shows a liquid crystal display panel described in Patent Document 3 below.
(A) is a schematic plan view, FIG.9 (b) is a principal part expanded sectional view.

The liquid crystal display panel 100 includes a pair of glass substrates 110 and 120 each having a frame-shaped sealing member 10.
The liquid crystal is sealed in a space formed by the bonding, and the outer edge portion thereof is connected to the control substrate 103 for driving the liquid crystal via the FPC 102. One substrate 110 is called a TFT substrate, and a plurality of gate bus lines and data bus lines are arranged in a matrix on the TFT substrate 110, and these data bus lines, gate bus lines, Thin film transistors (not shown) are formed at the intersections of the two, and the other substrate 120 is called a color filter substrate (hereinafter referred to as a CF substrate). The CF substrate 120 includes a heater. A common electrode 121, a color filter 123, and a common electrode 124 are formed. Common electrode 121 for heater and common electrode 1 of substrate 120
24 is a wiring 111 formed on the substrate 110 via conductors 122 and 125, respectively.
112, power is supplied from the wiring 111 to the heater common electrode 121, and the liquid crystal is heated.
JP-A-6-283261 (FIG. 3, paragraphs [0011] and [0012]) JP 58-126517 A (FIG. 3, claims) Japanese Patent Laying-Open No. 2005-122190 (FIGS. 3 and 4, paragraphs [0028] to [0034])

However, when a separate heater is attached to the liquid crystal display panel as in the liquid crystal display devices described in Patent Documents 1 and 2, the liquid crystal is heated from the outside of the liquid crystal display panel through the display panel, so that the heating efficiency is low. Therefore, if this heating efficiency is to be increased, the supplied power must be increased, and it is difficult to quickly heat the liquid crystal, and the light transmittance is further reduced.

In this respect, since the liquid crystal display device described in Patent Document 3 incorporates a heater directly in the liquid crystal display panel, the above-described problem is solved. However, this liquid crystal display panel has C
Since the heater is attached to the F substrate, connection means for connecting to the wiring provided on the TFT substrate is required, which complicates the structure and makes the production troublesome. In addition, in designing the liquid crystal display panel, it is easier to design and manufacture the heater in the TFT substrate rather than on the CF substrate side in terms of heating efficiency, manufacturing technology, or other points. In this case, since this TFT substrate has a plurality of thin film transistors, a plurality of wirings, electrodes and the like arranged in a complicated manner on the surface thereof, these members and the heater are in electrical contact with each other to cause product defects. There is a problem of inviting and adversely affecting the display quality.

This problem often occurs at the portion where the seal member is applied, particularly in the step of bonding the substrates in the manufacturing process of the liquid crystal display device. That is, the sealing material usually contains fillers that are insulating particles. When this sealing material is interposed between the substrates and bonded together by pressing both substrates, the fillers are on the TFT substrate. It may be caused by pressing the wiring part and breaking the insulating film between the wirings.

Therefore, the present invention has been made in view of the above-described problems of the prior art, and the object of the present invention is to provide a wiring between the heater and the TFT substrate when the liquid crystal heater is incorporated in the TFT substrate. It is an object of the present invention to provide a liquid crystal device that prevents electrical contact with the liquid crystal device.

Another object of the present invention is to provide a liquid crystal device capable of rapidly heating a liquid crystal.

The above object of the present invention can be achieved by the following constitution. That is, the invention of the liquid crystal device according to claim 1 is such that the liquid crystal driving element is connected to the intersection of the plurality of first and second wirings arranged in a matrix, and the end of each wiring is outside the seal region having a predetermined width. A first substrate connected to the liquid crystal driving circuit and a second substrate disposed opposite to the first substrate, and the first and second substrates are disposed in a sealing region of the first substrate. In a liquid crystal device in which liquid crystal is sealed in a space formed by bonding together with a frame-shaped sealing member interposed therebetween,
A heater layer for heating the liquid crystal is formed on the surface of the first substrate. Further, at a place where the seal region and at least one wiring selected from the first and second wirings are three-dimensionally crossed. A heater removal region from which the heater layer has been removed is formed.

According to a second aspect of the present invention, in the liquid crystal device according to the first aspect, the heater removal region is divided into a plurality of portions where the seal region and the at least one wiring intersect three-dimensionally. It is characterized by comprising a rectangular area.

According to a third aspect of the present invention, in the liquid crystal device according to the first aspect, the heater removal region is formed from the wiring formed immediately below each of the plurality of wirings that three-dimensionally intersect the sealing region. It consists of a slit-like region having a slightly large width.

The invention according to claim 4 is the liquid crystal device according to any one of claims 1 to 3,
A portion of the heater layer formed in the display region in which the liquid crystal is sealed is formed of a plurality of filament heater layers.

According to a fifth aspect of the present invention, in the liquid crystal device according to the fourth aspect of the present invention, the plurality of filament heater layers include at least one wiring selected from the first wiring and the second wiring and an insulating layer. It is characterized by overlapping in plan view.

The invention described in claim 6 is the liquid crystal device according to any one of claims 1 to 5,
The heater layer is formed of a metal thin film having high conductivity.

The invention according to claim 7 is the liquid crystal device according to claim 6, wherein the metal thin film is made of molybdenum.

The invention according to claim 8 is the liquid crystal device according to any one of claims 1 to 3,
The heater layer is formed of a transparent resistance material.

According to a ninth aspect of the present invention, in the liquid crystal device according to the eighth aspect, the heater layer is formed on the entire surface of the display area.

According to a tenth aspect of the present invention, in the liquid crystal device according to the eighth or ninth aspect, the transparent resistance material is indium tin oxide.

The present invention has the following excellent effects by including the above-described configuration. In other words, according to the first aspect of the present invention, the heater layer provided on the first substrate is removed as the heater removal region at the three-dimensional intersection of the seal region and the wiring. Even if the substrates are pressed when the two substrates are bonded together, the heater and the heater layer are not present under the wiring in the seal region, so that even if the insulating layer on the first substrate is damaged by the filler included in the seal member, the wiring and the heater There is no risk of electrical contact with the layer, and product defects can be prevented. Further, since the heater layer is formed on the first substrate side including the first and second wirings and the liquid crystal driving element, the wiring material constituting the first substrate can be used as it is, and the heater layer can be formed. It becomes easy. Furthermore, since the heater layer is close to the liquid crystal layer, it is possible to quickly heat the liquid crystal.

According to the second and third aspects of the invention, if the heater removal area is rectangular (claim 2), a relatively large area can be secured, so that it is not necessary to perform troublesome alignment, and the slit is removed. If it is made into a shape (Claim 3), the total area of the heater removal region can be kept relatively small, so that the effect of the invention of Claim 1 can be achieved without lowering the thermal efficiency of the heater layer. A seal removal region can be formed.

According to the fourth and fifth aspects of the present invention, the heater layer in the display area is a linear heater layer, and the linear heater layer is disposed so as to overlap the wiring in a plan view. Even if it can reduce an influence and it is a raw material which does not have translucency and has a high resistance value, it can be used. A function as a light shielding layer can be realized by overlapping with the wiring.

According to the invention of claim 6, it is possible to use a resistance material with high thermal efficiency, and to widen the selection range of the material for the heater layer.

According to the invention of claim 7, since molybdenum is usually used for manufacturing a liquid crystal device, this material can be used as it is, and the heater layer can be easily formed.

According to the eighth aspect of the present invention, since the heater layer can be formed also in the transmission part of the liquid crystal device by forming the heater layer with the transparent resistance material, it can be easily formed on the substrate surface. In particular, when the first substrate is a TFT substrate, the pixel electrode material normally used for this substrate can be used as it is, so that the formation becomes extremely simple.

According to the ninth aspect of the invention, the heater layer is formed on the entire surface of the display region, so that the liquid crystal can be heated uniformly and efficiently in the region.

According to the invention of claim 10, since indium tin oxide is usually used for manufacturing a liquid crystal device, this material can be used as it is, and the heater layer can be easily formed.

Hereinafter, the best embodiment of the present invention will be described with reference to the drawings. However, the embodiment described below exemplifies a liquid crystal display device for embodying the technical idea of the liquid crystal device of the present invention, and is not intended to specify the present invention for this liquid crystal device. Other embodiments within the scope of the claims are equally applicable. FIG. 1 is a schematic perspective view showing the entire configuration of a liquid crystal display device according to an embodiment of the present invention, and FIG. 2 shows the liquid crystal display device of FIG. 1 so that the wiring on the lower substrate can be seen through. FIG.

First, an outline of a liquid crystal display device 1 according to an embodiment of the present invention will be described with reference to FIGS.
The liquid crystal display device 1 includes a pair of substrates 2 and 3 made of a transparent material such as glass or plastic.
And having a frame-shaped sealing member 4 interposed therebetween, and bonding the liquid crystal 5 in a space formed between the substrates 2 and 3 and the sealing member 4 by the bonding. ing. The lower substrate 2 is a rectangular plate having long sides 2 ₁ , 2 ₂ and short sides 2 ₃ , 2 _4, and a substrate that is larger than the upper substrate 3 is used. The portions of the substrate that protrude from the upper substrate 3 when the two are attached are the overhang portions 2S and 2T. These overhang portions 2S and 2T are formed in an L shape along two adjacent peripheries of the upper substrate 3 (note that
In Figure 2 are formed in a long side _{2 2} and the short side _{2 4.} ), A liquid crystal driving semiconductor (hereinafter referred to as an IC chip) IC ₁ having a driving circuit for driving the liquid crystal 5 on each of the substrate projecting portions 2S and 2T.
, One or more ICs ₂ are mounted. The sealing member 4 used here is a known member, for example, a material in which filler 4a of insulating particles is mixed in a thermosetting resin such as an epoxy resin.

3 is an enlarged plan view showing an enlarged long side portion on which the IC chip of the liquid crystal display device of FIG. 2 is mounted, FIG. 4 is a cross-sectional view taken along line AA of FIG. 3, and FIG. Sectional drawing cut | disconnected by the BB line,
6 is a cross-sectional view taken along line CC in FIG. The filament heater layers 9 _{1 to} 9 shown in FIG.
_{Since n} has the same shape, the reference numeral _9m is attached and unified.

The lower substrate 2 is called a TFT substrate. As shown in FIG. 4, a heater layer 9 is formed on the surface of the substrate. The structure of the heater layer 9 will be described later. In this TFT substrate 2, the heater layer 9 is covered with an insulating layer 10, a plurality of gate lines 6 are disposed above the insulating layer 10, and then the source lines 7 are connected to the gate lines 6 through the gate insulating film 11. A thin film transistor (TFT) as a switching element is connected near the position where the gate line 6 and the source line 7 intersect with each other. In this way, a plurality of gate lines 6 and source lines 7 are wired in a matrix, and after the TFTs (not shown) are connected in the vicinity where these gate lines 6 and source lines 7 intersect, a protective insulating film is formed. By forming 12 and the pixel electrode 13, a region surrounded by the gate line 6 and the source line 7 becomes one pixel region. Further, the end portions of the gate line 6 and the source line 7 are led out from the application portion of the seal member 4 to the plurality of ICs.
It is connected to each of the chip IC ₁ and IC ₂ . For this connection, for example, as shown in FIG. 4, a contact hole C is formed on the protective insulating film 12, a conductive member T is provided in the contact hole C, and a terminal of the IC chip IC ₂ is mounted on the conductive member T. Is done. The TFTs connected to the gate line 6 and the source line 7 are operated by signals sent from the IC chips IC ₁ and IC ₂ , and the inside surrounded by the seal member 4 in which the liquid crystal is enclosed is a liquid crystal driving region,
This is a so-called display area DA. In FIG. 2, the gate line 6, the source line 7 and the TFT in the display area DA are omitted.

The upper substrate 3 is called a color filter substrate (hereinafter referred to as a CF substrate).
As shown in FIG. 4, a color filter layer 3a is formed on the surface, and a common electrode 3b is formed on the color filter layer 3a.

Next, the structure of the heater layer will be described mainly with reference to FIGS.
The heater layer 9 is provided on the surface of the TFT substrate 2. The heater layer 9, and the striatum heater layer ₉ 1 to 9 _n a plurality of the power are connected to both ends in each filament heater layer ₉ 1 to 9 _n of these streak heater layer ₉ 1 to 9 _n It consists of two feeding layers 9a and 9b to be supplied. These linear heater layers 9 _{1 to} 9 _n and feeding layers 9a and 9b are metal thin films made of a metal having high electrical conductivity, for example, molybdenum (Mo). It is integrally formed with. The film thickness is preferably in the range of 500 to 1200 mm, and particularly preferably in the range of 700 to 900 mm.

Each of the filament heater layers 9 _{1 to} 9 _n has a predetermined width, and opens a predetermined gap in the display area DA from the upper side to the lower side of FIG. To be parallel to the source line 7 to be connected. These linear heater layers 9 _{1 to} 9 _n are provided at positions overlapping the source line 7 disposed on the insulating layer 10 and the like in plan view, and the line width thereof is the source line 7.
The line width is the same as or slightly wider. Thus, by superimposing the line heater layers 9 _{1 to} 9 _n and the source line 7, it is possible to realize a function as a light shielding layer while reducing the influence on the transmittance of each pixel. The two power supply layers 9a and 9b each have a predetermined width, and the power supply layer 9b on the projecting portion 2T side is formed wider than the other power supply layer 9a. The seal member 4 is disposed on a plurality of insulating layers and various wirings, and a part of the seal member 4 overlaps with the power feeding layers 9a and 9b.

Among the power supply layers 9a and 9b, a portion where the source line 7 of the power supply layer 9b on the overhanging portion 2T side and the seal member 4 overlap each other is a plurality of heater removal regions 9A from which the metal thin film constituting the power supply layer 9b has been removed. Is formed. These heaters removal region 9A is formed in a position corresponding to the source line 7 respectively extending from the four IC chip IC _2, since both are formed in the same pattern, one heater removal region thereof 9A will be described with reference to FIGS.

As shown in FIGS. 3 and 4, the heater removal region 9 </ b> A is formed under the seal member 4 and at a location where the source line 7 is formed. The removal range is formed not only directly below the source line 7 but also in a rectangular range in which the space between the source lines 7 extending from the same IC chip IC ₂ is removed. When the heater removal area 9A is in such a wide range, alignment with the wiring becomes unnecessary, and the heater removal area 9A can be easily formed. Further, even if a plurality of heater removal regions 9A are formed in the power supply layer 9b, since the power supply layer 9b is formed wide, the electrical resistance value can be set to a predetermined value. It is possible to balance the temperature and the temperature of the power feeding layer 9b. The linear heater layers 9 _{1 to} 9 _n have a surface area that is small when they are linear members having substantially the same thickness as the source wire 7, but as described above, the linear heater layers 9 _{1 to} 9 _n are electrically conductive. By using a high degree of metal (such as Mo), the electric resistance can be set to a predetermined resistance value and a sufficient calorific value can be obtained. The heater removal region 9A is a region which is formed in a rectangular shape are formed in plural on the IC chip IC every _2, this plurality of heater removal region 9A, as shown in FIGS. 3 and 5, Provided at a predetermined distance from each other, the power supply layer 9b
Is not broken on the way.

Next, the TFT substrate 2 on which the heater layer 9 is formed is provided with the TFT, the gate line 6, the source line 7, and the like, and is bonded to the CF substrate 3. Therefore, these steps will be described below.

An insulating layer 10 is formed on the TFT substrate 2 on which the heater layer 9 is formed so as to cover the heater layer 9, and a gate line 6 having a gate electrode (not shown) is provided on the insulating layer 10 with a long side 2 _1. 2
_A plurality of auxiliary capacitor lines (not shown) are formed on the gate line 6 at the same time, and these are covered with the gate insulating film 11. And on the gate electrode, a gate insulating film 11 is interposed through T.
A semiconductor layer (not shown) made of amorphous silicon or polycrystalline silicon constituting the FT is formed, and a plurality of source lines 7 made of a metal such as aluminum or molybdenum are formed on the gate insulating film 11 on the gate line 6. A source electrode (not shown) of the TFT extends from the source line 7 and the source electrode is in contact with the semiconductor layer. Also,
A drain electrode (not shown) formed of the same material as that of the source line 7 and the source electrode at the same time is provided on the gate insulating film 11, and this drain electrode is also in contact with the semiconductor layer. A protective insulating film 12 made of, for example, an inorganic insulating material is laminated so as to cover the source line 7, TFT, and gate insulating film 11, and a pixel electrode 13 made of, for example, ITO is formed on the protective insulating film 12, and a drain electrode As a result, the TFT substrate 2 is completed.

Then, the bonding of the TFT substrate 2 and the CF substrate 3 is performed according to the following procedure.
First, the TFT substrate 2 is set in the first dispenser device, and the seal member 4 (for example, a thermosetting resin such as epoxy resin mixed with insulating filler 4a) is formed in a frame shape and one side thereof is a heater. Application is performed so as to be located in the removal region 9A. Next, the TFT substrate 2 is set in a second dispenser device, and a contact material is applied on each transfer electrode. Then TF
Spacers are evenly spread over the display area DA of the T substrate 2, and a temporary fixing adhesive is applied to the portion of the CF substrate 3 where the seal member 4 and the contact material come into contact. Thereafter, the TFT substrate 2 and the CF substrate 3 are bonded together, and the temporary fixing adhesive is cured to complete the temporary fixing. When both the temporarily fixed substrates 2 and 3 are heated while being pressurized, the thermosetting resin of the seal member 4 and the contact material is cured, and an empty liquid crystal display panel is completed. The liquid crystal display device 1 is completed when the liquid crystal 5 is injected into the empty liquid crystal display panel from an injection port (not shown) and the injection port is closed with a sealant.
Below the TFT substrate 2, a backlight or sidelight having a well-known light source, a light guide plate, a diffusion sheet, and the like (not shown) is disposed.

Although formed by filament heater layer 9 ₁ to 9 _n extending in parallel to the source line 7 to heater layer 9 in FIG. 2, the filament heater layer 9 ₁ to 9 _n are formed parallel to the gate line 6 It is also possible. However, since the gate insulating film 11 is formed below the source line 7 in addition to the insulating layer 10, the distance to the heater layer 9 is longer than that of the gate line 6, and the insulating layer 10 is damaged and the heater is damaged. Since the risk of contact with the layer 9 becomes smaller and the distance between the heater layer 9 and the source line 7 is farther than the gate line 6, the capacity generated between them can be kept small.
Preferably, it is provided below the source line 7.

In the above embodiment, the heater removal region 9A of the power feeding layer 9 is connected to each source line 7 IC.
Although each chip IC is formed in a rectangular shape in units of _two , only the portion directly below each source line 7 may be removed. 7 is an enlarged plan view showing a long side portion on which an IC chip of a liquid crystal display device according to another embodiment is mounted, and FIG. 8 is a cross-sectional view taken along the line DD in FIG. . In addition, since the liquid crystal display device of another embodiment has the same structure as the liquid crystal display device 1 of the above embodiment except for the shape of the heater removal region, only the points relating to the heater removal region will be described here. The configuration is omitted to avoid duplication with the above description.

As shown in FIG. 7, in the liquid crystal display device 1A according to the other embodiment, a power feeding layer 9b is formed in the vicinity of the projecting portion 2T as in the liquid crystal display device 1 according to the above embodiment, and this power feeding layer is formed in the display area DA. 9b streak heater layer 9 _m of a plurality of parallel source lines 7 are formed from the filament heater layer 9 _m is formed so as to overlap with the source line 7.

Then, at the position overlapping the source line 7 in the application region of the sealing member 4 of the power feeding layer 9b, as shown in FIGS. A removal region 9B is formed. In the plurality of heater removal regions 9B, adjacent heater removal regions 9B are separated from each other. The length in the vertical direction of the heater removal region 9B is preferably slightly longer than the width of the application region of the seal member 4, and the heater removal region 9B
By making B slightly larger than the portion where the sealing member 4 and the source line 7 intersect three-dimensionally in this way, damage to the insulating layer 10 and the like during bonding can be suppressed.

Therefore, when the heater removal region 9A or 9B is provided in the power supply layer 9b that three-dimensionally intersects with the source line 7 in this way, electrical contact between the power supply layer 9 and the source line 7 is eliminated in the manufacturing process of the liquid crystal display panel. be able to. That is, the liquid crystal display panel is manufactured through a process of attaching these substrates after attaching wirings, insulating films, filters, and the like to the TFT and CF substrates 2 and 3, respectively. After the frame-shaped seal member 4 is formed in the seal region, the CF substrate 3 is placed on the seal member 4 and bonded to the CF substrate 3 by applying a predetermined pressing force. At this time, if the source line 7 exists under the frame-shaped seal member 4, the insulating layer 10 and the like covering the heater layer 7 are broken by the pressing force at the time of bonding, and the source line 7 and the heater layer 9 are electrically connected. Although they may be connected to cause a short circuit accident, by forming the heater removal region 9A or 9B in the power supply layer 9b that three-dimensionally intersects with the source line 7, even if the insulating layer 10 or the like is broken, the power supply layer 9b and the source line 7 There is no contact.

In the above-described embodiment, the heater layers 9 have been described in which the power feeding layers 9a and 9b and the linear heater layers 9 _{1 to} 9 _n are integrally formed on the same layer with the same member. For example, the power supply layers 9a and 9b may be formed in the same process as the gate electrode 6, and the power supply layers 9a and 9b and the filament heater layers 9 _{1 to} 9 _n may be connected via contact holes. Moreover, although the heater layer 9 in the display area DA is the linear heater layers 9 _{1 to} 9 _n , the heater layer 9 may be provided so as to cover the entire display area DA, for example. However, in this case, it is necessary to form the heater layer 9 with a member having translucency, and the material thereof is preferably indium tin oxide (ITO) used in the pixel electrode 13 or the like.
Is preferably used.

The liquid crystal device is used by being mounted on various electronic devices such as a computer device, a monitor device, a television device, a projector device, and a mobile phone. In particular, vehicle-mounted electronic devices such as a car navigation device, various electronic devices used outdoors, and the like are suitable examples for applying the present invention.

FIG. 1 is a schematic perspective view showing the overall configuration of a liquid crystal display device according to an embodiment of the present invention. FIG. 2 is a plan view showing the liquid crystal display device of FIG. 1 so that the wiring on the lower substrate can be seen through. FIG. 3 is an enlarged plan view showing an enlarged long side portion on which the IC chip of the liquid crystal display device of FIG. 2 is mounted. 4 is a cross-sectional view taken along line AA in FIG. FIG. 5 is a cross-sectional view taken along line BB in FIG. 6 is a cross-sectional view taken along line CC in FIG. FIG. 7 is an enlarged plan view showing an enlarged long side portion on which an IC chip of a liquid crystal display device according to another embodiment is mounted. 8 is a cross-sectional view taken along line DD in FIG. 9A and 9B show a prior art liquid crystal display panel, FIG. 9A is a schematic plan view, and FIG. 9B is an enlarged cross-sectional view of a main part.

Explanation of symbols

1 Liquid crystal display device 2 Lower substrate (TFT substrate)
2T, 2S Overhang 3 Upper substrate (CF substrate)
4 Seal member 4a Filler 5 Liquid crystal 6 Gate line 7 Source line 9 Heater layer 9 _{1 to} 9 _N- line heater layer 9a, 9b Power supply layer 9A, 9B Heater removal region 10 Insulating layer 11 Gate insulating film 12 Protective insulating film 13 Pixel electrode IC ₁ , IC ₂ IC chip DA display area

Claims (10)

A liquid crystal driving element is connected to an intersection where a plurality of first and second wirings are arranged in a matrix, and an end portion of each wiring is led out of a seal area having a predetermined width and connected to a liquid crystal driving circuit. A first substrate and a second substrate disposed opposite to the first substrate, and the first and second substrates are bonded along a seal region of the first substrate with a frame-shaped sealing member interposed therebetween. In a liquid crystal device in which liquid crystal is sealed in a space formed by bonding,
A heater layer for heating the liquid crystal is formed on the surface of the first substrate. Further, at a place where the seal region and at least one wiring selected from the first and second wirings are three-dimensionally crossed. A liquid crystal device, wherein a heater removal region from which the heater layer has been removed is formed. 2. The liquid crystal device according to claim 1, wherein the heater removal region is formed of a rectangular region divided into a plurality of portions where the seal region and the at least one wiring cross each other. 2. The heater removal area is formed of a slit-like area having a slightly larger width than the wiring formed immediately below each of a plurality of wirings that three-dimensionally intersect the sealing area. The liquid crystal device described. 4. The liquid crystal device according to claim 1, wherein a portion of the heater layer formed in the display region in which the liquid crystal is sealed is formed of a plurality of linear heater layers. . 5. The liquid crystal according to claim 4, wherein the plurality of filament heater layers overlap with at least one wiring selected from the first wiring and the second wiring through an insulating layer in a plan view. apparatus. The liquid crystal device according to claim 1, wherein the heater layer is formed of a metal thin film having high conductivity.   The liquid crystal device according to claim 6, wherein the metal thin film is made of molybdenum. The liquid crystal device according to claim 1, wherein the heater layer is formed of a transparent resistance material. The liquid crystal device according to claim 8, wherein the heater layer is formed on the entire surface in the display area. The liquid crystal device according to claim 8, wherein the transparent resistance material is indium tin oxide.

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