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JP2007273261A - Organic EL display device - Google Patents

Organic EL display device Download PDF

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JP2007273261A
JP2007273261A JP2006097610A JP2006097610A JP2007273261A JP 2007273261 A JP2007273261 A JP 2007273261A JP 2006097610 A JP2006097610 A JP 2006097610A JP 2006097610 A JP2006097610 A JP 2006097610A JP 2007273261 A JP2007273261 A JP 2007273261A
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upper electrode
organic
display device
auxiliary wiring
metal layer
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Masahiro Tanaka
政博 田中
Toshiyuki Matsuura
利幸 松浦
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Japan Display Inc
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Hitachi Displays Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To easily manufacture an organic EL display device comprising fine auxiliary wiring on an upper electrode. <P>SOLUTION: The top emission type organic EL display device comprising an organic EL element with a reflecting lower electrode, a functional layer and a light transmitting upper electrode laminated in this order, adopts a structure comprising the auxiliary wiring 5 joined by an indium-based soldered layer 6, on the upper electrode 15. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、トップエミッション型（以下、「ＴＥ型」と称する。）の有機EL表示装置に係わり、特に上部電極上に金属層を形成する技術に関するものである。   The present invention relates to a top emission type (hereinafter referred to as “TE type”) organic EL display device, and more particularly to a technique for forming a metal layer on an upper electrode.

ＴＥ型の有機EL表示装置の上部電極は、光を取り出すため、ＩＺＯやＩＴＯといった透明導電膜や、Ａｇを薄膜形成することが行われている。しかし、このような電極はシート抵抗が高い。そのため、実際のアクティブマトリクス型の有機EL表示装置を製造する場合、この上部電極に補助配線を形成する。このような構造は特許文献1に記載されている。   In order to extract light from the upper electrode of the TE type organic EL display device, a transparent conductive film such as IZO or ITO, or a thin film of Ag is formed. However, such an electrode has a high sheet resistance. Therefore, when manufacturing an actual active matrix organic EL display device, auxiliary wiring is formed on the upper electrode. Such a structure is described in Patent Document 1.

無機ＥＬ表示装置では、無機ＥＬは有機物ではないので、一般的なホトリソグラフィー技術によって、上部電極の上に直接形成した金属層をパターニングできる。しかし、有機ＥＬ表示装置では、機能層中の有機物がホトリソグラフィー工程中で用いる溶媒や湿気で電極が腐食するなどの問題を起こす可能性があるため、適用できない。   In the inorganic EL display device, since the inorganic EL is not an organic substance, the metal layer directly formed on the upper electrode can be patterned by a general photolithography technique. However, the organic EL display device cannot be applied because organic substances in the functional layer may cause problems such as corrosion of the electrode by a solvent or moisture used in the photolithography process.

特許文献１でもこの点については指摘しているが、結局、有機層をフッ素系樹脂層で保護し、フォトレジを使ってパターニングし、フッ化炭化水素駅でレジストごとリフトオフして、インジウムをパターンニングしている。   Although this point is pointed out also in patent document 1, after all, an organic layer is protected with a fluorine-type resin layer, patterning is carried out using a photoresist, and the resist is lifted off at the fluorohydrocarbon station, and indium is patterned. Ning.

特開平１１−８０７３号公報Japanese Patent Laid-Open No. 11-8073

上記特許文献１のように、保護層を用いてホトリソグラフィーを行う方法はプロセスが煩雑になり、かつ、保護層を用いても水分や溶剤は浸入し、有機ＥＬ表示装置の寿命が短くなる可能性があった。また、マスク蒸着では高精度なパターンを蒸着できない。   As described in Patent Document 1, the method of performing photolithography using a protective layer makes the process complicated, and even if the protective layer is used, moisture and solvent can enter and the life of the organic EL display device can be shortened. There was sex. Also, high-precision patterns cannot be deposited by mask deposition.

本発明の目的は、簡単に上部電極の上に電極を形成可能なトップエミッション型の有機ＥＬ表示装置の製造方法とその製造方法に適した構造を提供することにある。   An object of the present invention is to provide a manufacturing method of a top emission type organic EL display device capable of easily forming an electrode on an upper electrode and a structure suitable for the manufacturing method.

反射性の下部電極と機能層と光透過性の上部電極とが順に積層された有機ＥＬ素子を備えたトップエミッション型の有機EL表示装置において、上部電極の上に金属層を形成する場合、低融点半田を用いて、上部電極の上に金属層を形成する。有機層のガラス転移温度を考慮すれば、有機層の中で最もガラス温度が低い有機層のガラス転移温度以下の融点となる半田が好ましい。   In a top emission type organic EL display device having an organic EL element in which a reflective lower electrode, a functional layer, and a light transmissive upper electrode are laminated in order, a metal layer is formed on the upper electrode. A metal layer is formed on the upper electrode using a melting point solder. In consideration of the glass transition temperature of the organic layer, solder having a melting point not higher than the glass transition temperature of the organic layer having the lowest glass temperature among the organic layers is preferable.

具体的には、５２Ｉｎ−４８Ｓｎ（Ｗｔ％）は、融点が１１７℃であるので、リフロー工程の温度範囲を考えても採用可能である。また、さらに、３０Ｂｉ−２０Ｓｎ−５０Ｉｎ（Ｗｔ％）の場合にあっては、１００度以下にすることもできるので、好ましい。ただし、この場合、加熱エージングを行うならば、この融点以下にする必要があり、通電エージングのみ行うようにしてもよい。   Specifically, since 52In-48Sn (Wt%) has a melting point of 117 ° C., it can be used even in consideration of the temperature range of the reflow process. Furthermore, in the case of 30Bi-20Sn-50In (Wt%), it can be set to 100 degrees or less, which is preferable. However, in this case, if heat aging is performed, it is necessary to make the melting point or less, and only energization aging may be performed.

本発明によれば、上部電極の上に容易に金属層を形成することができる。   According to the present invention, the metal layer can be easily formed on the upper electrode.

以下、本発明の最良の実施形態について、実施例の図面を参照して詳細に説明する。   DESCRIPTION OF THE PREFERRED EMBODIMENTS The best mode for carrying out the present invention will be described below in detail with reference to the drawings of the examples.

図１に有機ＥＬ表示装置の断面構造図を示す。
この有機ＥＬ表示装置は、ガラス基板１０上に、薄膜トランジスタ（以下、「ＴＦＴ」と称する。）１１を有し、このＴＦＴの上に保護絶縁膜を介して接続された下部電極１２と、この下部電極１２を画素毎に仕切る絶縁層であるバンク１３と、この下部電極１２の上に形成された有機発光層１４と、この有機発光層１４の上に形成された上部電極１５とを有する構造をしている。 FIG. 1 shows a cross-sectional structure diagram of an organic EL display device.
This organic EL display device has a thin film transistor (hereinafter referred to as “TFT”) 11 on a glass substrate 10, a lower electrode 12 connected to the TFT via a protective insulating film, A structure having a bank 13 as an insulating layer for partitioning the electrode 12 for each pixel, an organic light emitting layer 14 formed on the lower electrode 12, and an upper electrode 15 formed on the organic light emitting layer 14. is doing.

下部電極１２は反射特性を備え、上部電極１５は光透過性を備えている。つまり、この有機ＥＬ表示装置は、トップエミッション型のアクティブマトリクス有機ＥＬ表示装置である。上部電極１５は透明導電膜で構成されている。この透明導電膜は非常にシート抵抗が高いので、上部電極１５が面内で電圧降下が生じないように、上部電極１５の上にこの上部電極１５より抵抗値が小さい低温半田層６及び補助配線５をこの順に備える。   The lower electrode 12 has reflection characteristics, and the upper electrode 15 has light transmittance. That is, this organic EL display device is a top emission type active matrix organic EL display device. The upper electrode 15 is made of a transparent conductive film. Since this transparent conductive film has a very high sheet resistance, the low temperature solder layer 6 and the auxiliary wiring having a lower resistance value than the upper electrode 15 are formed on the upper electrode 15 so that no voltage drop occurs in the upper electrode 15 in the plane. 5 are provided in this order.

下部電極１２は、Ａｌで構成され、上部電極１５は、ＩＴＯで構成されている。なお、この上部電極１５と低温半田層６は、リフロー工程により反応するので、明確に境界がなく、これらの合金が形成されている場合もあるが、その構造も本発明の範疇である。また、低温半田層６と補助配線５との境界も同様である。   The lower electrode 12 is made of Al, and the upper electrode 15 is made of ITO. Since the upper electrode 15 and the low-temperature solder layer 6 react in a reflow process, there is no clear boundary and these alloys may be formed, but the structure is also within the scope of the present invention. The same applies to the boundary between the low-temperature solder layer 6 and the auxiliary wiring 5.

この構造は次のプロセスで製造される。
＜製造プロセス１＞
図２〜図７に、上部電極１５上に設けた金属層６と低温半田層５の製造プロセス１を示す。表面をアッシング処理したポリエチレンテレフタラート（ＰＥＴ）製フィルム２上に、ヘキサクロロ白金酸水溶液を塗布後、乾燥し、波長３６５ｎｍの光３を用いてマスク１により露光し、白金核パターン４を生成する（図２）。 This structure is manufactured by the following process.
<Manufacturing process 1>
2 to 7 show a manufacturing process 1 of the metal layer 6 and the low-temperature solder layer 5 provided on the upper electrode 15. A polyethylene terephthalate (PET) film 2 having an ashed surface is coated with an aqueous hexachloroplatinic acid solution, dried, and exposed to light using a light 3 having a wavelength of 365 nm to produce a platinum nucleus pattern 4 ( Figure 2).

次に、無電解ニッケルめっきを行う。露光された部分にのみ白金核ができているので、この部分に選択的にニッケルが成長し、厚さ１０μｍの金属パターンが形成される（図３）。次に、５２Ｉｎ−４８Ｓｎ（Ｗｔ％）の半田フロー槽に、このフィルム２を漬けて、ニッケル上に半田層６を付着させる（図４）。このフィルム２を表面がＩＴＯで構成された透明導電膜である上部電極１５の上に重ね合わせる（図５）。次に、この重ね合わせた状態でリフロー炉に入れ、加熱する。上部電極１５の上に金属パターンである補助配線５をリフロー半田付けする（図６）。次に、フィルム２をはがす（図７）。   Next, electroless nickel plating is performed. Since platinum nuclei are formed only in the exposed part, nickel is selectively grown in this part, and a metal pattern having a thickness of 10 μm is formed (FIG. 3). Next, the film 2 is dipped in a 52In-48Sn (Wt%) solder flow bath, and the solder layer 6 is deposited on the nickel (FIG. 4). The film 2 is overlaid on the upper electrode 15 which is a transparent conductive film whose surface is made of ITO (FIG. 5). Next, it puts in the reflow furnace in this overlapped state, and heats it. The auxiliary wiring 5 which is a metal pattern is reflow soldered on the upper electrode 15 (FIG. 6). Next, the film 2 is peeled off (FIG. 7).

このようにして、ＮｉとＰｔが積層された金属層で構成された補助配線５を、低温半田６で上部電極１５上に形成する。その結果、トップエミッション型の有機ＥＬ表示装置の上部電極１５の上には、低温半田層６で補助配線５が接合された。低温半田層６を補助配線５より導電率が高い材料で形成されているので、上部電極１５のシート抵抗が下げられる。   In this way, the auxiliary wiring 5 composed of a metal layer in which Ni and Pt are laminated is formed on the upper electrode 15 with the low-temperature solder 6. As a result, the auxiliary wiring 5 was joined by the low temperature solder layer 6 on the upper electrode 15 of the top emission type organic EL display device. Since the low temperature solder layer 6 is formed of a material having a higher conductivity than the auxiliary wiring 5, the sheet resistance of the upper electrode 15 is lowered.

なお、この製造方法で製造した補助配線５として機能する金属層は、ＮｉとＰｔの合金であるが、リフロー工程を経るので、低温半田層との間に明確な境界が存在しない場合があるが、その場合も本発明の範疇である。補助配線５は、Ｎｉに対してＰｔが含有した構造となる。   Although the metal layer functioning as the auxiliary wiring 5 manufactured by this manufacturing method is an alloy of Ni and Pt, there is a case where there is no clear boundary with the low-temperature solder layer because it undergoes a reflow process. In that case, it is also within the scope of the present invention. The auxiliary wiring 5 has a structure containing Pt with respect to Ni.

＜製造プロセス２＞
図８〜図１４に上部電極上に設けた金属層の製造プロセス２を示す。
金属板２２にホトレジスト２１を塗布し、乾燥した後、マスク１により露光し、現像する（図８）。この露光現像によってパターニングすることで補助配線５を形成する（図９）。その後、離型処理を行い、クロムの電解めっきを行い、厚さ３０μｍの金属パターン２３を形成する（図１０）。次に、表面酸化処理を行うことで黒化し、感圧接着剤を塗布したフィルム２４を貼り付け（図１１）、めっきした金属パターン２３を剥がす（図１２）。この剥がしによりめっきした金属パターン２３が転写される（図１３）。 <Manufacturing process 2>
8 to 14 show a manufacturing process 2 of the metal layer provided on the upper electrode.
Photoresist 21 is applied to metal plate 22 and dried, then exposed to mask 1 and developed (FIG. 8). The auxiliary wiring 5 is formed by patterning by this exposure and development (FIG. 9). Thereafter, a mold release treatment is performed, and chromium electroplating is performed to form a metal pattern 23 having a thickness of 30 μm (FIG. 10). Next, the film is blackened by performing a surface oxidation treatment, a film 24 coated with a pressure sensitive adhesive is attached (FIG. 11), and the plated metal pattern 23 is peeled off (FIG. 12). The plated metal pattern 23 is transferred by this peeling (FIG. 13).

その後、５２Ｉｎ−４８Ｓｎ（Ｗｔ％）の半田フローにより、金属パターン２３上に半田２５を付着させる（図１４）。このフィルム２４を上部電極１５であるＩＴＯの表面に重ね合わせ、加熱することにより、半田２５をリフローさせ、上部電極１５の上に金属パターン２３を半田付けする。このときの熱により感圧接着剤の接着強度が低下し、容易にフィルム２４を剥がすことができるようになる。   Thereafter, the solder 25 is deposited on the metal pattern 23 by a solder flow of 52In-48Sn (Wt%) (FIG. 14). The film 24 is superposed on the surface of the ITO serving as the upper electrode 15 and heated to reflow the solder 25, and the metal pattern 23 is soldered onto the upper electrode 15. The heat at this time reduces the adhesive strength of the pressure sensitive adhesive, and the film 24 can be easily peeled off.

この方法では、ホトレジストパターンは、繰り返し使用できるので、離型処理からめっき、転写の繰り返しで金属パターン付きフィルムを製造することができる。また、めっきの成長速度は大きいので、生産性は高い。ニッケルと異なり、クロムは反射性が低いので、外光が反射せずに、表示素子には適している。クロム表面を酸化することで、さらに反射を抑えることができる。   In this method, since the photoresist pattern can be used repeatedly, a film with a metal pattern can be produced by repeating the release treatment, plating, and transfer. Moreover, since the growth rate of plating is large, productivity is high. Unlike nickel, chromium has low reflectivity, so that it does not reflect external light and is suitable for a display element. By oxidizing the chromium surface, reflection can be further suppressed.

＜製造プロセス３＞
図１５〜図２０に上部電極１５上に設けた金属層の製造プロセス３を示す。
金属板３２に感光性ソルダーレジスト３１を塗布し、乾燥した後、露光現像する（図１５）。この露光現像によってパターニングすることで補助配線５のパターンを形成する（図１６）。その後、５２Ｉｎ−４８Ｓｎ（Ｗｔ％）の半田フローにより金属板３２上にできた補助配線５のパターンに半田３３を付着させる（図１７）。 <Manufacturing process 3>
A manufacturing process 3 of the metal layer provided on the upper electrode 15 is shown in FIGS.
A photosensitive solder resist 31 is applied to the metal plate 32, dried, and exposed and developed (FIG. 15). The pattern of the auxiliary wiring 5 is formed by patterning by this exposure and development (FIG. 16). Thereafter, the solder 33 is attached to the pattern of the auxiliary wiring 5 formed on the metal plate 32 by the solder flow of 52In-48Sn (Wt%) (FIG. 17).

この金属板３２を表面がＩＴＯで構成された有機ＥＬ表示装置の上部電極１５表面に重ね合わせる（図１８）。その状態で加熱することにより、半田３３をリフローし、上部電極１５のＩＴＯと接触させ（図１９）、そのまま冷却しないで、金属板３２を剥がす（図２０）。こうすることにより、半田３３の一部が上部電極１５上に転写され、補助配線５が形成される。   This metal plate 32 is overlaid on the surface of the upper electrode 15 of the organic EL display device whose surface is made of ITO (FIG. 18). By heating in this state, the solder 33 is reflowed and brought into contact with the ITO of the upper electrode 15 (FIG. 19), and the metal plate 32 is peeled off without being cooled as it is (FIG. 20). In this way, a part of the solder 33 is transferred onto the upper electrode 15 and the auxiliary wiring 5 is formed.

この方法では、半田フローして金属板３２に半田３３を載せては、上部電極１５上に転写できるので、生産性が極めて高い。また、金属板３２から補助配線５のパターンを転写するので、フィルムからの転写に比べて長寸法が安定する。   In this method, since the solder flow is performed and the solder 33 is placed on the metal plate 32, it can be transferred onto the upper electrode 15, so that the productivity is extremely high. Further, since the pattern of the auxiliary wiring 5 is transferred from the metal plate 32, the long dimension is stabilized as compared with the transfer from the film.

＜はんだ代替材料＞
上述した製造プロセスの例は、半田として、５２Ｉｎ−４８Ｓｎ（Ｗｔ％）を用いたが、表１にあるように、５０Ｂｉ―２６.７Ｐｂ―１３.３Ｓｎ―１０Ｃｄ（Ｗｔ％）や、３０Ｂｉ―２０Ｓｎ―５０Ｉｎ（Ｗｔ％）を用いることもできる。 <Solder substitute material>
In the example of the manufacturing process described above, 52In-48Sn (Wt%) was used as the solder. -50In (Wt%) can also be used.

Figure 2007273261
Figure 2007273261

＜配線パターン１＞
図２１に、基板４１上の補助配線５のパターンの一例を示す。
補助配線５のパターンはパッシブマトリクスでは全ての上部電極に沿ってストライプ状に形成する必要があるが、アクティブマトリクスでは任意性が高く、図２１のように、補助配線５のパターン４３は赤、青、緑のサブピクセル４２からなるドットに対して１本あるいは複数ドットに対して１本でもよい。各画素のバンク上の非発光領域に形成する。 <Wiring pattern 1>
FIG. 21 shows an example of the pattern of the auxiliary wiring 5 on the substrate 41.
In the passive matrix, the pattern of the auxiliary wiring 5 needs to be formed in a stripe shape along all the upper electrodes. However, in the active matrix, the pattern of the auxiliary wiring 5 is red, blue as shown in FIG. , One dot for the green sub-pixel 42 or one dot for a plurality of dots may be used. It is formed in a non-light emitting area on the bank of each pixel.

＜配線パターン２＞
図２２に、基板４５上の補助配線５のパターンの他の一例を示す。
大型テレビのように、補助配線５の幅である５〜１０μｍに対して画素が十分大きい場合、具体的には、３００〜１０００μｍもあるような場合、図２２に示すように、バンク上の非発光領域に形成する必要は必ずしもなく、画素パターン４６と補助配線５のパターン４７の合わせを省略してもよい。この場合でも。パターンのピッチは合っている必要がある。１画素毎の発光面積が変わり、面内均一性が確保できなくなるからである。 <Wiring pattern 2>
FIG. 22 shows another example of the pattern of the auxiliary wiring 5 on the substrate 45.
When a pixel is sufficiently large with respect to 5-10 μm which is the width of the auxiliary wiring 5 as in the case of a large television, specifically, when there are 300-1000 μm, as shown in FIG. It is not always necessary to form the light emitting region, and the alignment of the pixel pattern 46 and the pattern 47 of the auxiliary wiring 5 may be omitted. Even in this case. The pattern pitch must match. This is because the light emission area for each pixel changes and in-plane uniformity cannot be secured.

＜配線パターン３＞
図２３に、封止フィルム５４上の補助配線５のパターンのさらに他の一例を示す。
バリア層５３を設けた封止フィルム５４に補助配線５１を形成し、粘着材５２で仮止めしてから、半田５０を溶融して補助配線を接続する。この構成では、封止フィルム５４を剥がす必要がなく、工程が短縮できる。 <Wiring pattern 3>
FIG. 23 shows still another example of the pattern of the auxiliary wiring 5 on the sealing film 54.
The auxiliary wiring 51 is formed on the sealing film 54 provided with the barrier layer 53 and temporarily fixed with the adhesive material 52, and then the solder 50 is melted to connect the auxiliary wiring. In this configuration, it is not necessary to remove the sealing film 54, and the process can be shortened.

＜配線パターン４＞
図２４に、カラーフィルタ板６１上の補助配線５のパターンの他の一例を示す。
カラーフィルタ板６１の接着に半田６６を用い、封止も低温半田６９を用いて行う。カラーフィルタ６３，６４，６５のＢＭ６２を補助配線にも利用することができる。 <Wiring pattern 4>
FIG. 24 shows another example of the pattern of the auxiliary wiring 5 on the color filter plate 61.
Solder 66 is used for bonding the color filter plate 61, and sealing is also performed using low-temperature solder 69. The BM 62 of the color filters 63, 64, 65 can also be used for auxiliary wiring.

有機ＥＬ表示装置の断面構造図である。It is a cross-section figure of an organic electroluminescence display. 上部電極上に設けた金属層の製造プロセスを示す図である。It is a figure which shows the manufacturing process of the metal layer provided on the upper electrode. 上部電極上に設けた金属層の製造プロセスを示す図である。It is a figure which shows the manufacturing process of the metal layer provided on the upper electrode. 上部電極上に設けた金属層の製造プロセスを示す図である。It is a figure which shows the manufacturing process of the metal layer provided on the upper electrode. 上部電極上に設けた金属層の製造プロセスを示す図である。It is a figure which shows the manufacturing process of the metal layer provided on the upper electrode. 上部電極上に設けた金属層の製造プロセスを示す図である。It is a figure which shows the manufacturing process of the metal layer provided on the upper electrode. 上部電極上に設けた金属層の製造プロセスを示す図である。It is a figure which shows the manufacturing process of the metal layer provided on the upper electrode. 上部電極上に設けた金属層の製造プロセスを示す図である。It is a figure which shows the manufacturing process of the metal layer provided on the upper electrode. 上部電極上に設けた金属層の製造プロセスを示す図である。It is a figure which shows the manufacturing process of the metal layer provided on the upper electrode. 上部電極上に設けた金属層の製造プロセスを示す図である。It is a figure which shows the manufacturing process of the metal layer provided on the upper electrode. 上部電極上に設けた金属層の製造プロセスを示す図である。It is a figure which shows the manufacturing process of the metal layer provided on the upper electrode. 上部電極上に設けた金属層の製造プロセスを示す図である。It is a figure which shows the manufacturing process of the metal layer provided on the upper electrode. 上部電極上に設けた金属層の製造プロセスを示す図である。It is a figure which shows the manufacturing process of the metal layer provided on the upper electrode. 上部電極上に設けた金属層の製造プロセスを示す図である。It is a figure which shows the manufacturing process of the metal layer provided on the upper electrode. 上部電極上に設けた金属層の製造プロセスを示す図である。It is a figure which shows the manufacturing process of the metal layer provided on the upper electrode. 上部電極上に設けた金属層の製造プロセスを示す図である。It is a figure which shows the manufacturing process of the metal layer provided on the upper electrode. 上部電極上に設けた金属層の製造プロセスを示す図である。It is a figure which shows the manufacturing process of the metal layer provided on the upper electrode. 上部電極上に設けた金属層の製造プロセスを示す図である。It is a figure which shows the manufacturing process of the metal layer provided on the upper electrode. 上部電極上に設けた金属層の製造プロセスを示す図である。It is a figure which shows the manufacturing process of the metal layer provided on the upper electrode. 上部電極上に設けた金属層の製造プロセスを示す図である。It is a figure which shows the manufacturing process of the metal layer provided on the upper electrode. 補助配線パターンの一例を示す図である。It is a figure which shows an example of an auxiliary wiring pattern. 補助配線パターンの一例を示す図である。It is a figure which shows an example of an auxiliary wiring pattern. 有機ＥＬ表示装置の断面構造図である。It is a cross-section figure of an organic electroluminescence display. 有機ＥＬ表示装置の断面構造図である。It is a cross-section figure of an organic electroluminescence display.

符号の説明Explanation of symbols

５・・・補助配線、６・・・低温半田層、１０・・・ガラス基板、１１・・・薄膜トランジスタ、１２・・・下部電極、１３・・・バンク、１４・・・有機発光層、１５・・・上部電極。   5 ... auxiliary wiring, 6 ... low temperature solder layer, 10 ... glass substrate, 11 ... thin film transistor, 12 ... lower electrode, 13 ... bank, 14 ... organic light emitting layer, 15 ... Upper electrode.

Claims (3)

反射性の下部電極と機能層と光透過性の上部電極とが順に積層された有機ＥＬ素子を備えたトップエミッション型の有機EL表示装置において、
前記上部電極の上に、インジウム系の半田により接合された補助配線を備えていることを特徴とする有機EL表示装置。 In a top emission type organic EL display device including an organic EL element in which a reflective lower electrode, a functional layer, and a light transmissive upper electrode are sequentially laminated,
An organic EL display device comprising auxiliary wiring joined by indium solder on the upper electrode. 反射性の下部電極と機能層と光透過性の上部電極とが順に積層された有機ＥＬ素子を備えたトップエミッション型の有機EL表示装置において、
前記上部電極の上に当該上部電極より抵抗値が小さい金属層を備え、
該金属層の上面に白金を含んでいることを特徴とする有機EL表示装置。 In a top emission type organic EL display device including an organic EL element in which a reflective lower electrode, a functional layer, and a light transmissive upper electrode are sequentially laminated,
A metal layer having a lower resistance value than the upper electrode is provided on the upper electrode.
An organic EL display device comprising platinum on the upper surface of the metal layer. 反射性の下部電極と機能層と光透過性の上部電極とが順に積層された有機ＥＬ素子を備えたトップエミッション型の有機EL表示装置において、
前記上部電極の上に、ビスマスを含む金属層を備えていることを特徴とする有機EL表示装置。 In a top emission type organic EL display device including an organic EL element in which a reflective lower electrode, a functional layer, and a light transmissive upper electrode are sequentially laminated,
An organic EL display device comprising a metal layer containing bismuth on the upper electrode.
JP2006097610A 2006-03-31 2006-03-31 Organic EL display device Pending JP2007273261A (en)

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