JP2007250970A - Film for protecting rear face of semiconductor element, semiconductor device using the same and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film for protecting the rear face of a semiconductor element which is improved in adhesiveness with the rear face of the semiconductor element and further, is improved in protection property and laser marking property in use for the rear face protection of the semiconductor element. <P>SOLUTION: A film for protecting the rear face of a semiconductor element includes: (A) resin containing a high molecular weight component in 15-85 wt.% with a weight average molecular weight including a crosslinking functional group of 100,000 or more and Tg of -50 to 50°C, and a thermosetting component in 15-85 wt.% mainly containing an epoxy resin; (B) filler; and (C) resin layer including a coloring agent, wherein the resin layer contains (B) 1-300 pts.wt. and (C) 0.1-10 pts.wt. in (A) 100 pts.wt. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor element back surface protective film that is excellent in semiconductor element back surface protection or adhesiveness and also has excellent laser marking properties when used for protecting a semiconductor element back surface, a semiconductor device using the same, and a method of manufacturing the same.

  2. Description of the Related Art Conventionally, electronic devices have been reduced in size and weight, and accordingly, high-density mounting on a substrate has been required, and semiconductor devices mounted on electronic devices have been reduced in size and weight. Conventionally, semiconductor devices include packages such as QFP (Quad Flat Package) and LOC (Lead On Chip). Usually, identification information such as a lot number and a manufacturer name is printed on these packages to identify the product. The product history can be identified. In the case of a package such as QFP or LOC, the identification information is directly laser-marked on the sealing material formed on the outer surface to identify the product.

  In recent years, semiconductor devices have been further reduced in size and weight, such as μBGA (Ball Grid Array) and CSP (Chip Size Package), which are further downsized and lighter than the above-described packages such as QFP and LOC. A package has been developed. In such a package, since the wiring for connecting the semiconductor element and the substrate is arranged in the central part of the semiconductor element and only that part is sealed, more than the conventional shape in which the entire semiconductor element is sealed. It becomes possible to further reduce the size and weight of the package.

  However, in the above-described packages such as μBGA and CSP, the semiconductor element has a face-down type, that is, the circuit surface of the semiconductor element is directed to the semiconductor wiring substrate side. When the package is manufactured or the package is transported, there is a problem that the end portion of the semiconductor element is chipped. In addition, some CSPs include a WL-CSP (Weber Level Chip Size Package) having a structure in which a semiconductor element is not sealed with a sealing material, and therefore, in order to print identification information for identifying a product. It is necessary to perform laser marking directly on the semiconductor element or directly print it.

However, when laser marking is directly performed on the semiconductor element, a clear contrast between the semiconductor element and the marked identification information cannot be obtained, and thus there is a problem that the identification is low and the visibility is poor. In addition, in the method of printing directly on the semiconductor element, the identification information can be clearly displayed on the semiconductor element, but there is a problem that the work time is significantly increased due to the increase in man-hours due to the printing work. Further, surface protection films (see, for example, Japanese Patent Application Laid-Open Nos. 2004-63551 and 2004-142430) that have excellent protection characteristics on the surface of the semiconductor element and visibility by laser marking and have few defects are disclosed.
JP 2004-63551 A JP 2004-142430 A

  An object of the present invention is to provide a film for protecting a back surface of a semiconductor element which is excellent in adhesion to the back surface of a semiconductor element, and also has excellent protection and laser marking properties when used for protecting the back surface of a semiconductor element, and a semiconductor device using the same. A manufacturing method is provided.

The present invention relates to the following.
1. (A) 15 to 85% by weight of a high molecular weight component having a weight average molecular weight including a crosslinkable functional group of 100,000 or more and Tg of −50 to 50 ° C. and a thermosetting component of 15 to 85% based on an epoxy resin. % (B) filler, (C) film for protecting the back surface of a semiconductor element having a resin layer containing a colorant, wherein (A) 100 parts by weight of resin layer (B) 1 to 300 The film for semiconductor element back surface protection which is a resin layer containing a weight part and (C) 0.1-10 weight part.
2. Item 2. The semiconductor element back surface protective film according to item 1, wherein the semiconductor element back surface protective film has a resin layer and a base material layer, the base material layer has a thickness of 5 to 300 μm, and the resin layer has a thickness of 5 to 500 μm. .
3. The semiconductor element back surface protective film is laminated in the order of base material layer / resin layer / protective layer, and the base material layer has a thickness of 5 to 300 μm, the resin layer has a thickness of 5 to 500 μm, and the protective layer has a thickness. Item 2. The film for protecting the back surface of a semiconductor element according to Item 1, wherein the thickness is 5 to 300 μm.
4). (B) The film for protecting a semiconductor element back surface according to any one of Items 1 to 3, wherein the filler is an inorganic filler.
5). (C) The film for semiconductor element back surface protection according to any one of Items 1 to 4, wherein the colorant is other than white.
6). Item 6. The semiconductor element back surface protective film according to any one of Items 1 to 5, wherein a storage elastic modulus in a dynamic viscoelasticity measurement apparatus at 35 ° C. after the resin layer is cured is 200 to 6000 MPa.
7). Item 7. The step of laminating the semiconductor element back surface protective film according to any one of Items 1 to 6 so that the resin layer is in contact with the surface facing the circuit surface of the semiconductor wafer, and laminating the dicing tape on the resin layer side of the semiconductor wafer. A method of manufacturing a semiconductor device, comprising: a step of obtaining a semiconductor element by dicing a semiconductor wafer into a predetermined size; and a step of separating a resin layer and a dicing tape to obtain a semiconductor element with a resin layer.
8). Item 8. A semiconductor device manufactured by the method for manufacturing a semiconductor device according to Item 7.

  To provide a film for protecting a back surface of a semiconductor element that is excellent in adhesiveness to the back surface of a semiconductor element, and also has excellent protection and laser marking properties when used for protecting the back surface of a semiconductor element, a semiconductor device using the same, and a method for manufacturing the same. Became possible.

  As the high molecular weight component constituting the component (A) used in the present invention, having a weight average molecular weight including a crosslinkable functional group of 100,000 or more and Tg of −50 to 50 ° C., a functional group such as glycidyl acrylate or glycidyl methacrylate is used. An epoxy group-containing (meth) acrylic copolymer containing a functional monomer and having a weight average molecular weight of 100,000 or more is preferred, and is preferably incompatible with the epoxy resin.

  As the epoxy group-containing (meth) acrylic copolymer, for example, a (meth) acrylic ester copolymer, acrylic rubber or the like can be used, and acrylic rubber is more preferable. Acrylic rubber is a rubber mainly composed of an acrylate ester and mainly composed of a copolymer such as butyl acrylate and acrylonitrile, a copolymer such as ethyl acrylate and acrylonitrile, or the like.

  As the functional monomer, glycidyl acrylate or glycidyl methacrylate is preferably used. Examples of such an epoxy group-containing (meth) acrylic copolymer having a weight average molecular weight of 100,000 or more include HTR-860P-3 manufactured by Nagase ChemteX Corporation.

  The amount of the repeating unit containing an epoxy resin such as glycidyl acrylate or glycidyl methacrylate is preferably 0.5 to 6.0% by weight, more preferably 0.5 to 5.0% by weight, and 0.8 to 5.0% by weight. Is particularly preferred. When the amount of the epoxy group-containing repeating unit is within this range, the adhesive force can be secured and gelation can be prevented.

  Examples of the functional monomer include, in addition to glycidyl acrylate and glycidyl methacrylate, ethyl (meth) acrylate, butyl (meth) acrylate, and the like. These can be used alone or in combination of two or more. . In the present invention, ethyl (meth) acrylate refers to both ethyl acrylate and ethyl methacrylate. The mixing ratio in the case of using a combination of functional monomers is determined in consideration of the glass transition temperature (hereinafter referred to as “Tg”) of the epoxy group-containing (meth) acrylic copolymer, and Tg is −50 ° C. or higher. It is preferable. This is because if the Tg is −50 ° C. or higher, the tackiness of the resin layer in the B-stage state is appropriate, and there is no problem in handling properties.

  When the above monomer is polymerized to produce a high molecular weight component having a cross-linkable functional group-containing weight average molecular weight of 100,000 or more and Tg of −50 to 50 ° C., the polymerization method is not particularly limited. Methods such as pearl polymerization and solution polymerization can be used.

  When the above monomer is polymerized to produce a high molecular weight component having a cross-linkable functional group-containing weight average molecular weight of 100,000 or more and Tg of −50 to 50 ° C., the polymerization method is not particularly limited. Methods such as pearl polymerization and solution polymerization can be used.

  In the present invention, the high molecular weight component has a weight average molecular weight containing a crosslinkable functional group of 100,000 or more and Tg of −50 to 50 ° C., and the weight average molecular weight is preferably 300,000 to 3,000,000. More preferably, it is 500,000 to 2,000,000. When the weight average molecular weight is in this range, the strength, flexibility, and tackiness when formed into a film are appropriate, and the adhesion between the resin layer and the adherend can be secured. In the present invention, the weight average molecular weight is a value measured by gel permeation chromatography and converted using a standard polystyrene calibration curve.

  In this invention, the usage-amount of a high molecular weight component is 15 to 85 weight% in the total amount of (A) component, Preferably it is 20 to 85 weight%, More preferably, it is 20 to 80 weight%, Especially preferably. Is 25 to 80% by weight. If the use amount of the weight average molecular weight containing a crosslinkable functional group is less than 15% by weight, the resulting resin layer may have insufficient flexibility and become brittle, and if it exceeds 85% by weight, Fluidity may be reduced.

  In the present invention, the epoxy resin constituting the component (A) is not particularly limited as long as it is cured and has an adhesive action. Bifunctional epoxy resins such as bisphenol A type epoxy, novolac type epoxy resins such as phenol novolac type epoxy resin and cresol novolac type epoxy resin, and the like can be used. Moreover, what is generally known, such as a polyfunctional epoxy resin, a glycidyl amine type epoxy resin, a heterocyclic ring-containing epoxy resin, or an alicyclic epoxy resin, can be applied.

  As such an epoxy resin, as bisphenol A type epoxy resin, Epicoat 807, 815, 825, 827, 828, 834, 1001, 1004, 1007, 1009 manufactured by Yuka Shell Epoxy Co., Ltd., DER- manufactured by Dow Chemical Co., Ltd. 330, 301, 361, YD8125, YDF8170 manufactured by Tohto Kasei Co., Ltd. and the like. Examples of phenol novolac type epoxy resins include Epicoat 152,154 manufactured by Yuka Shell Epoxy Co., Ltd., EPPN-201 manufactured by Nippon Kayaku Co., Ltd., DEN-438 manufactured by Dow Chemical Co., Ltd., and o-cresol novolac type epoxy resin. Examples of the resin include EOCN-102S, 103S, 104S, 1012, 1025, and 1027 manufactured by Nippon Kayaku Co., Ltd., YDCN701, 702, 703, and 704 manufactured by Toto Kasei Co., Ltd. As the polyfunctional epoxy resin, Epon 1031S manufactured by Yuka Shell Epoxy Co., Ltd., Araldite 0163 manufactured by Ciba Specialty Chemicals Co., Ltd., Denacor EX-611, 614, 614B, 622, 512, 521, 421 manufactured by Nagase Chemical Co., Ltd. 411, 321 and the like. As an amine type epoxy resin, Epicod 604 manufactured by Yuka Shell Epoxy Co., Ltd., YH-434 manufactured by Toto Kasei Co., Ltd., TETRAD-X, TETRAD-C manufactured by Mitsubishi Gas Chemical Co., Ltd., ELM manufactured by Sumitomo Chemical Co., Ltd. -120 and the like. Examples of the heterocyclic ring-containing epoxy resin include ERL4234, 4299, 4221, and 4206 manufactured by UCC, such as Araldite PT810 manufactured by Ciba Specialty Chemicals. These epoxy resins can be used alone or in combination of two or more.

  An epoxy resin curing agent can also be used for the component (A) of the present invention. As an epoxy resin hardening | curing agent, the well-known hardening | curing agent used normally can be used. For example, bisphenols having two or more phenolic hydroxyl groups in one molecule such as amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenol A, bisphenol F, and bisphenol S, phenol novolac resins, bisphenol A Examples thereof include phenolic resins such as novolak resin or cresol novolak resin. Phenol resins such as phenol novolac resin, bisphenol A novolak resin, and cresol novolac resin are particularly preferable in terms of excellent electric corrosion resistance when absorbing moisture.

  Preferred phenol resin curing agents include, for example, Dainippon Ink & Chemicals, Inc., trade names: Pryofen LF2882, Pryofen LF2822, Pryofen LF4871, Pryofen TD-2090, Pryofen TD-2149, Pryofen VH -4150, priofen VH4170, and the like.

  In this invention, the usage-amount of the thermosetting component which has an epoxy resin as a main component is 15 to 85 weight% in the total amount of (A) component, Preferably it is 15 to 80 weight%, More preferably, it is 20 to 80% by weight, particularly preferably 20 to 75% by weight. If the use amount of the weight average molecular weight containing a crosslinkable functional group is less than 15% by weight, the heat resistance and fluidity of the resulting resin layer may be lowered. The flexibility may be reduced.

  There is no restriction | limiting in particular as (B) filler of this invention, For example, crystalline silica, amorphous silica, aluminum oxide, calcium carbonate, magnesium carbonate, aluminum nitride, boron nitride etc. can be used. Inorganic fillers are preferred.

  The amount of the filler used is 1 to 300 parts by weight, preferably 2 to 300 parts by weight, more preferably 2 to 250 parts by weight, particularly preferably 100 parts by weight of the total amount of (A) resin. Is 3 to 250 parts by weight. If the amount of filler used is less than 1 part by weight, the resulting semiconductor element back surface protective film may become soft and chipping during dicing may increase. Adhesion with a semiconductor substrate may be reduced.

  The colorant (C) of the present invention is not particularly limited, and for example, pigments or dyes such as carbon black, graphite, titanium carbon, manganese dioxide, and phthalocyanine can be used. In consideration, inorganic fillers other than white such as carbon black are preferable. The amount of the colorant used is 0.1 to 10 parts by weight, preferably 0.2 to 8 parts by weight, more preferably 0.3 to 6 parts by weight based on 100 parts by weight of the total amount of the resin (A). Part, particularly preferably 0.5 to 5 parts by weight. When the amount of the colorant used is less than 0.1 parts by weight, the film is not sufficiently colored, and the visibility after laser marking tends to deteriorate, and when the amount of the colorant used exceeds 10 parts by weight, it is obtained. There is a possibility that the adhesion between the semiconductor element back surface protective film and the semiconductor substrate may be lowered.

In the present invention, an additive such as a coupling agent may be added to the resin layer. Examples of the coupling agent include silane-based, titanium-based, and aluminum-based, and silane-based coupling agents are most preferable.

  The silane coupling agent is not particularly limited, and examples thereof include vinyltrichlorosilane, vinyltris (β-methoxyethoxy) silane, vinyltriethoxysilane, vinyltrimethoxysilane, γ-methacryloxypropyltrimethoxysilane, and γ-methacrylate. Roxypropylmethyldimethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-glycidoxypropylmethyldiethoxy Silane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropylmethyldimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltri Toxisilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropyltriethoxysilane, 3-aminopropylmethyldiethoxysilane, 3-ureidopropyltriethoxysilane, 3-ureidopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane 3-aminopropyl-tris (2-methoxy-ethoxy-ethoxy) silane, N-methyl-3-aminopropyltrimethoxysilane, triaminopropyl-trimethoxysilane, 3-4,5-dihydroimidazol-1-yl -Propyltrimethoxysilane, 3-methacryloxypropyl-trimethoxysilane, 3-mercaptopropyl-methyldimethoxysilane, 3-chloropropyl-methyldimethoxysilane, 3-chloropropyl-dimethoxysilane 3-cyanopropyl-triethoxysilane, hexamethyldisilazane, N, o-bis (trimethylsilyl) acetamide, methyltrimethoxysilane, methyltriethoxysilane, ethyltrichlorosilane, n-propyltrimethoxysilane, isobutyltrimethoxysilane, Amyltrichlorosilane, octyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, methyltri (methacryloyloxyethoxy) silane, methyltri (glycidyloxy) silane, N-β (N-vinylbenzylaminoethyl) -γ-aminopropyl Trimethoxysilane, octadecyldimethyl [3- (trimethoxysilyl) propyl] ammonium chloride, γ-chloropropylmethyldichlorosilane, γ-chloropropylmethyl Methoxysilane, γ-chloropropylmethyldiethoxysilane, trimethylsilyl isocyanate, dimethylsilyl isocyanate, methylsilyl triisocyanate, vinylsilyl triisocyanate, phenylsilyl triisocyanate, tetraisocyanate silane, ethoxysilane isocyanate, etc. can be used. These may be used alone or in combination of two or more.

  The titanium-based coupling agent is not particularly limited. For example, isopropyl trioctanoyl titanate, isopropyl dimethacrylisostearoyl titanate, isopropyl tridodecylbenzenesulfonyl titanate, isopropyl isostearoyl diacryl titanate, isopropyl tri (dioctyl phosphate) titanate, Isopropyltricumylphenyl titanate, isopropyltris (dioctylpyrophosphate) titanate, isopropyltris (n-aminoethyl) titanate, tetraisopropylbis (dioctylphosphite) titanate, tetraoctylbis (ditridecylphosphite) titanate, tetra (2, 2-Diallyloxymethyl-1-butyl) bis (ditridecyl) phosphite titane , Dicumylphenyloxyacetate titanate, bis (dioctylpyrophosphate) oxyacetate titanate, tetraisopropyl titanate, tetranormal butyl titanate, butyl titanate dimer, tetra (2-ethylhexyl) titanate, titanium acetylacetonate, polytitanium acetate Nitrate, Titanium Octylene Glycolate, Titanium Lactate Ammonium Salt, Titanium Lactate, Titanium Lactate Ethyl Ester, Titanium Chileethanol Aminate, Polyhydroxy Titanium Stearate, Tetramethyl Orthotitanate, Tetraethyl Orthotitanate, Tetarapropyl Orthotitanate, Tetraisobutyl Ortho Titanate, stearyl titanate, cresyl titanate monomer, cresyl Nate polymer, diisopropoxy-bis (2,4-pentadionate) titanium (IV), diisopropyl-bis-triethanolamino titanate, octylene glycol titanate, tetra-n-butoxytitanium polymer, tri-n-butoxytitanium A monostearate polymer, tri-n-butoxytitanium monostearate, etc. can be used, and these 1 type (s) or 2 or more types can also be used together.

  The aluminum coupling agent is not particularly limited. For example, ethyl acetoacetate aluminum diisopropylate, aluminum toys (ethyl acetoacetate), alkyl acetoacetate aluminum diisopropylate, aluminum monoacetylacetate bis (ethyl acetoacetate), Aluminum tris (acetylacetonate), aluminum = monoisopropoxymonooroxyethyl acetoacetate, aluminum-di-n-butoxide-mono-ethylacetoacetate, aluminum-di-iso-propoxide-mono-ethylacetoacetate, etc. Aluminum chelate compound, aluminum isopropylate, mono-sec-butoxyaluminum diisopropylate, aluminum-sec- Chireto, aluminum alcoholates of aluminum ethylate or the like can be used, may be used in combination one or more of them.

  The additive is preferably used in an amount of 50 parts by weight or less based on 100 parts by weight of the total amount of the resin (A). When there is more addition amount of the said additive than 50 weight part, the heat resistance of the film for semiconductor element back surface protection obtained may fall.

  As for the thickness of the base material layer which comprises the film for semiconductor element back surface protection of this invention, 5-300 micrometers is preferable, More preferably, it is 5-200 micrometers, Especially preferably, it is 5-100 micrometers, Most preferably, it is 10-100 micrometers. is there. If the thickness of the substrate layer is less than 5 μm, the film itself may not be produced due to insufficient strength during film production. If the film thickness exceeds 300 μm, there is no particular advantage, and the film itself may be expensive. There is.

  There are no particular restrictions on the material used as the base material layer. Polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, polyethylene naphthalate film, polyethersulfone film, polyetheramide film A plastic film such as a polyetheramideimide film, a polyamide film, a polyamideimide film, or a polyimide film can be used. If necessary, surface treatment such as primer application, UV treatment, corona discharge treatment, polishing treatment, etching treatment, mold release treatment, etc. may be performed.

  As for the thickness of the resin layer which comprises the film for semiconductor element back surface protections of this invention, 5-500 micrometers is preferable, More preferably, it is 5-400 micrometers, Most preferably, it is 10-400 micrometers. If the thickness of the resin layer is less than 5 μm, the adhesion to the semiconductor element may be reduced, and if it exceeds 500 μm, the thickness of the semiconductor element may increase, which may hinder package design.

  The thickness of the protective layer constituting the semiconductor element back surface protective film of the present invention is preferably 5 to 300 μm, more preferably 5 to 200 μm, particularly preferably 5 to 100 μm, and most preferably 10 to 100 μm. . If the thickness of the protective layer is less than 5 μm, there is a possibility that the film cannot be sufficiently protected due to insufficient strength at the time of film production. If the thickness of the film exceeds 300 μm, there is no particular advantage, and the film itself may be expensive. .

  There are no particular restrictions on the material used as the protective layer, polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, polyethylene naphthalate film, polyethersulfone film, polyetheramide film, A plastic film such as a polyetheramideimide film, a polyamide film, a polyamideimide film, and a polyimide film can be used. If necessary, surface treatment such as primer application, UV treatment, corona discharge treatment, polishing treatment, etching treatment, mold release treatment, etc. may be performed.

  The resin layer constituting the semiconductor element back surface protective film of the present invention preferably has a storage elastic modulus of 200 to 6000 MPa, more preferably 300 to 6000 MPa in a dynamic viscoelasticity measuring apparatus at 35 ° C. after curing. More preferably 500 to 6000 MPa, and particularly preferably 1000 to 5000 MPa. Further, the curing condition is preferably 1 hour at 170 ° C. If the storage elastic modulus is less than 100 MPa, chipping may easily occur during dicing, and if it exceeds 6000 MPa, adhesion to a semiconductor element may be reduced.

  This elastic modulus can be increased, for example, by increasing the filling amount of the filler or improving the crosslink density of the resin layer using a polyfunctional epoxy resin.

  The film for protecting the back surface of a semiconductor element can be produced, for example, by applying a resin layer varnish on a base material layer and then removing the solvent by heating and drying. The heating and drying conditions at that time vary depending on the components of the resin layer used and the type of solvent, but are generally heated at a temperature of 60 to 200 ° C. for 3 to 30 minutes. There are no particular restrictions on the method of applying the varnish and drying the solvent, but in consideration of workability and the like, it is preferable to apply using a multi-coater.

  The form and usage example of the semiconductor element back surface protective film of the present invention will be described with reference to the drawings.

  FIG. 1 is a film for protecting a semiconductor element back surface comprising a substrate layer 1 and a resin layer 2, and FIG. 2 is a film for protecting a semiconductor element back surface comprising a substrate layer 1, a resin layer 2 and a protective layer 3. The semiconductor element back surface protective film of FIG. 1 or FIG. 2 is peeled off from the protective layer 3 in the case of FIG. 2 so that the resin layer 2 is in contact with the back surface of the semiconductor substrate 4 in the case of FIG. 4 is laminated so that the resin layer 2 is in contact with the back surface of FIG. After the resin layer is cured by heating, a step of mounting solder balls, a step of laminating the dicing tape 5 on the resin layer 2 side of the semiconductor substrate 4 (FIG. 4), and a step of dicing the semiconductor substrate 4 to a predetermined size (FIG. 5) A semiconductor package (FIG. 7) can be obtained through a process of peeling the resin layer 2 and the dicing tape 5 to obtain the semiconductor element 6 with a resin layer. Although there is no restriction | limiting in particular as the said semiconductor substrate 4, For example, a silicon wafer etc. are mentioned.

  After the semiconductor package is manufactured by the method as described above, generally, YAG laser or the like is irradiated from the semiconductor element back surface protection film side to display identification information for identifying the product.

  In the step of laminating so that the resin layer 2 is in contact with the back surface of the semiconductor wafer 4, the laminating temperature to the semiconductor element is preferably 180 ° C. or less from the viewpoint of excellent workability without applying a load to the semiconductor element. More preferably, it is 120 degrees C or less.

  The method for obtaining the back surface-protected semiconductor package is not limited to the above-described film lamination method, but a method of directly bonding a semiconductor element back surface protection film to a semiconductor element by heat press, and a varnish for forming a semiconductor element back surface protection film Can be coated on a semiconductor substrate by a spin coater, a bar coater or the like and then dried by heating to form a direct film on the semiconductor substrate. The spin coating, bar coating, and heat drying conditions at this time vary depending on the resin layer components and the type of solvent used.

  Since the semiconductor element obtained by protecting the back surface with the film for protecting a back surface of a semiconductor element of the present invention is excellent in back surface protection and laser marking properties, it can be used in various semiconductor devices.

  EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, this invention is not limited to these.

Example 1
30 parts by weight of bisphenol F type epoxy resin (trade name: YD-8170C, epoxy equivalent: 160 manufactured by Toto Kasei Co., Ltd.), cresol novolac type epoxy resin (trade name: YDCN-703, epoxy equivalent: 210 manufactured by Toto Kasei Co., Ltd.) 10 parts by weight, 27 parts by weight of phenol novolac resin (Dainippon Ink Chemical Co., Ltd., trade name: Praiofen LF4871), epoxy group-containing acrylic rubber (trade name, manufactured by Nagase ChemteX Corporation: HHTR-860P-3DR, weight average) Molecular weight: 800,000, Tg: −7 ° C., 28 parts by weight, 1-cyano-1-phenylimidazole (trade name: Curesol 2PZ-CN) manufactured by Shikoku Kasei Kogyo Co., Ltd., silica filler (Admafine stock) company product name: SO-C2, specific gravity: 2.2g / ^cm 3) 9 Parts by weight, γ-mercaptopropyltrimethoxysilane (trade name: A-189 manufactured by Nihon Unicar), 0.25 parts by weight, γ-ureidopropyltrimethoxysilane (trade name: A-1160, manufactured by Nihon Unicar) 0.25 Cyclohexanone is added to a composition consisting of 3.3 parts by weight and 3.3 parts by weight of resin-based processed pigment (trade name: FP BLACK 308, carbon black content: 29.0% by weight, manufactured by Sanyo Dye Co., Ltd.), and mixed with stirring. Deaeration was performed to obtain a varnish having a nonvolatile content (hereinafter abbreviated as NV) of about 30%. The NV measurement method was as follows.
NV (%) = (Amount of varnish after heat drying (g) / Amount of varnish before heat drying (g)) × 100
Drying conditions: 170 ° C. for 1 hour

  The obtained varnish was applied onto a base material layer (Teijin DuPont Films, Inc., trade name: PUREX A31B, surface release-treated polyethylene terephthalate film, film thickness: 38 μm), 90 ° C., 5 minutes and 110 ° C., 5 minutes. The film was dried by heating to obtain a film having a film thickness of 25 μm, and a film A in a B-stage state was obtained.

After the obtained film A was cured at 170 ° C. for 1 hour, the tensile elastic modulus (35 ° C., 10 Hz) and the glass transition temperature (frequency 10 Hz, ascending) were measured with a dynamic viscoelastic spectrometer (DVE-4 type, manufactured by Rheology). The temperature rate was 2 ° C./min).

Moreover, the thermal decomposition start temperature was measured on the following conditions with the differential thermal balance (the Seiko Instruments Inc. make, SSC5200 type | mold).
Temperature increase rate: 10 ° C / min, atmosphere: air

  Further, the obtained film A was attached to a mirror surface of a 300 μm thick silicon wafer using a hot roll laminator (trade name, VA-400III type, manufactured by Taisei Laminator Co., Ltd.) (lamination conditions: 80 ° C., 0.2 MPa, 0.005 μm) 5 m / min), after obtaining a silicon wafer with a back surface protective film, after peeling off the base material layer and pasting a dicing tape (Furukawa Electric Co., Ltd., trade name: UC-3004M-80) on the resin layer side, Dicing was performed into 7 × 7 mm square using a dicing cutter, and further washing and drying were performed to obtain a semiconductor element with a resin layer. At this time, the dicing property was evaluated by observing side cracks on the semiconductor element (number of crack generation elements / number of observation elements).

  The resin layer side of the semiconductor element with a 7 × 7 mm square resin layer obtained as described above was thermocompression-bonded (160 ° C., 42 alloy substrate (trade name, manufactured by Hitachi Metals, Ltd., 42 alloy van, 0.15 t × 35 × 25 mm)). 0.1 MPa, 5 seconds), and after curing at 170 ° C. for 1 hour, the die shear strength (FIG. 7) was measured to evaluate the adhesion strength.

Further, laser marking was performed on the resin layer side of the semiconductor element with a resin layer cured at 170 ° C. for 1 hour using a YAG laser with an output of 5.0 J / pulse to confirm visibility (number of samples: 100 each). In the visibility evaluation method, an image of a surface after laser marking is captured by a scanner, and a marking portion and a non-marking portion around the marking portion are converted into two gradations by image processing software (trade name manufactured by Adobe, PHOSHOP). This operation can be divided into 256 levels of black and white depending on the brightness. Next, the “threshold threshold value for the two gradations” in which the marking part is displayed in white and the non-marking part in black, and the marking part is also displayed in black and the boundary between the marking / non-marking part is eliminated. The threshold value of the boundary to be obtained, and when the value is 40 or more, the visibility is good (◯), and when the difference is 30 or more and less than 40, the visibility is almost good. (Δ), when the difference was less than 30, the visibility was determined to be poor (×).
The above evaluation results are summarized in Table 1.

(Example 2)
60 parts by weight of bisphenol A type epoxy resin (trade name: YD8125, epoxy equivalent: 175, manufactured by Toto Kasei Co., Ltd.), 5 parts by weight of phenol novolac type epoxy resin (trade name: YDCN703, epoxy equivalent: 210), phenol 35 parts by weight of novolak resin (Dainippon Ink Chemical Co., Ltd., trade name: Priorofen LF2882), epoxy group-containing acrylic rubber (trade name: HHTR-860P-3DR, manufactured by Nagase ChemteX Corporation), weight average molecular weight: 800,000, 230 parts by weight of Tg: −7 ° C., 0.5 part by weight of 1-cyano-1-phenylimidazole (trade name: Curesol 2PZ-CN, manufactured by Shikoku Kasei Kogyo Co., Ltd.), silica filler (trade name: Admafine Corporation: SO) -C2, specific gravity: 2.2g ^/ cm 3) 11.4 double Parts, γ-mercaptopropyltrimethoxysilane (trade name: A-189, manufactured by Nihon Unicar), 0.25 parts by weight, γ-ureidopropyltrimethoxysilane (trade name: A-1160, manufactured by Nihon Unicar), 0.25 weight Parts and resin-based processed pigment (trade name: FP BLACK 308, manufactured by Sanyo Dyeing Co., Ltd., carbon black content: 29.0% by weight) 10 parts by weight of cyclohexanone is added to the mixture, stirred and mixed, and then vacuum degassed. Thus, a varnish having a nonvolatile content (hereinafter abbreviated as NV) of about 30% was obtained.

The obtained varnish was applied onto a base material layer (Teijin DuPont Films, Inc., trade name: PUREX A31B, surface release-treated polyethylene terephthalate film, film thickness: 38 μm), 90 ° C., 5 minutes and 110 ° C., 5 minutes. Heat drying was carried out, and it was set as the coating film whose film thickness is 25 micrometers, and the film B of the B stage state was obtained.
The obtained film B was evaluated under exactly the same conditions as in Example 1. The results are summarized in Table 1.

(Example 3)
In Example 1, 30 parts by weight of bisphenol F type epoxy resin (trade name: YD-8170C, epoxy equivalent: 160, manufactured by Toto Kasei Co., Ltd.) was added to 30 parts by weight of bisphenol A type epoxy resin (trade name: YD8125, manufactured by Toto Kasei Co., Ltd., epoxy equivalent). 175) Except for using 32.8 parts by weight, the same operation as in Example 1 was performed to obtain a film C in a B-stage state.
The obtained film C was evaluated under exactly the same conditions as in Example 1. The results are summarized in Table 1.

Example 4
In Example 1, except for changing 3.3 parts by weight of resin-based processed pigment (trade name: FP BLACK 308, carbon black content: 29.0% by weight, manufactured by Sanyo Color Co., Ltd.) to 1.3 parts by weight. Exactly the same operation as in Example 1 was carried out to obtain a B-stage film D.
The obtained film D was evaluated under exactly the same conditions as in Example 1. The results are summarized in Table 1.

(Comparative Example 1)
Except for not blending a silica filler (trade name: SO-C2, specific gravity: 2.2 g / cm ³ ) in Example 2, the same operation as in Example 2 was performed, and a film E in a B-stage state was obtained. Obtained.
The obtained film E was evaluated under exactly the same conditions as in Example 1. The results are summarized in Table 1.

(Comparative Example 2)
The same operation as in Example 1 was performed except that the amount of silica filler (trade name: SO-C2, specific gravity: 2.2 g / cm ³ ) in Example 1 was changed to 300 parts by weight. A stage-state film F was obtained.
The characteristics of the obtained film F were measured under the same conditions as in Example 1. However, the film F did not adhere to the silicon wafer and could not be laminated. The results are summarized in Table 1.

(Comparative Example 3)
Example 1 except that 3.3 parts by weight of resin-based processed pigment (trade name: FP BLACK 308, carbon black content: 29.0% by weight) manufactured by Sanyo Dye Co., Ltd. was changed to 0.3 parts by weight in Example 1. The same operation as in No. 1 was performed to obtain a B-stage film G.
The obtained film G was evaluated under exactly the same conditions as in Example 1. The results are summarized in Table 1.

(Comparative Example 4)
Example 1 is the same as Example 1 except that 3.3 parts by weight of resin-based processed pigment (trade name: FP BLACK 308, carbon black content: 29.0% by weight, manufactured by Sanyo Dyeing Co., Ltd.) is 35 parts by weight. Exactly the same operation was performed to obtain a film H in the B stage state.
The obtained film H was evaluated under exactly the same conditions as in Example 1. The results are summarized in Table 1.

  The film for protecting a back surface of a semiconductor element of the present invention is excellent in dicing properties, adhesion to a semiconductor substrate, and laser marking properties, and therefore can be applied to various semiconductor devices.

It is a schematic diagram of the film for semiconductor element back surface protection formed from the base material layer 1 and the resin layer 2. FIG. It is a schematic diagram of the film for semiconductor element back surface protection formed from the base material layer 1, the resin layer 2, and the protective layer 3. FIG. It is a schematic diagram of the process of laminating the resin layer 2 side of the semiconductor element back surface protective film on the semiconductor substrate 4. It is a schematic diagram of the process of laminating to the dicing tape 5 after mounting a solder ball on the semiconductor substrate 4 with a film for protecting the back surface of the semiconductor element. It is a schematic diagram of the process of dicing the semiconductor substrate 4 with a film for semiconductor element back surface protection. It is a schematic diagram of the process of peeling the semiconductor substrate 4 with a film for semiconductor element back surface protection from the dicing tape 5 after dicing, and obtaining the semiconductor element 6 with a resin layer. It is a schematic diagram of the die shear strength measuring method.

Explanation of symbols

1: base material layer 2: resin layer 3: protective layer 4: semiconductor substrate 5: dicing tape 6: semiconductor element with resin layer 7: solder ball 10: laminate roll 20: roll A
30: Roll B
40: Dicing cutter 50: Pickup device 60: Die shear strength measuring device 70: Semiconductor element 80: Resin layer 90: Substrate (42 alloy)
100: Hot plate

Claims (8)

  (A) 15 to 85% by weight of a high molecular weight component having a weight average molecular weight including a crosslinkable functional group of 100,000 or more and Tg of −50 to 50 ° C. and a thermosetting component of 15 to 85% based on an epoxy resin. % (B) filler, (C) film for protecting the back surface of a semiconductor element having a resin layer containing a colorant, wherein (A) 100 parts by weight of resin layer (B) 1 to 300 The film for semiconductor element back surface protection which is a resin layer containing a weight part and (C) 0.1-10 weight part.   2. The semiconductor element back surface protection film according to claim 1, wherein the semiconductor element back surface protection film has a resin layer and a base material layer, the base material layer has a thickness of 5 to 300 [mu] m, and the resin layer has a thickness of 5 to 500 [mu] m. the film.   The semiconductor element back surface protective film is laminated in the order of base material layer / resin layer / protective layer, and the base material layer has a thickness of 5 to 300 μm, the resin layer has a thickness of 5 to 500 μm, and the protective layer has a thickness. The film for protecting the back surface of a semiconductor element according to claim 1, wherein the thickness is 5 to 300 μm.   (B) Filler is an inorganic filler, The film for semiconductor element back surface protection of any one of Claims 1-3.   (C) Coloring agent is other than white, The film for semiconductor element back surface protection of any one of Claims 1-4.   The film for protecting the back surface of a semiconductor element according to any one of claims 1 to 5, wherein a storage elastic modulus in a dynamic viscoelasticity measuring apparatus at 35 ° C after curing of the resin layer is 200 to 6000 MPa.   The step of laminating the semiconductor element back surface protective film according to any one of claims 1 to 6 so that the resin layer is in contact with the surface facing the circuit surface of the semiconductor wafer, and laminating a dicing tape on the resin layer side of the semiconductor wafer. A method for manufacturing a semiconductor device, comprising: a step of dicing a semiconductor wafer into a predetermined size to obtain a semiconductor element; and a step of peeling a resin layer and a dicing tape to obtain a semiconductor element with a resin layer. A semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 7.

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