JP2007250347A - Semiconductor integrated circuit device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve such problems that, when a fuse or its alternative is built in a semiconductor device in order to limit current with a conventional technology, resin used for coating is carbonized by heat at the time of inflow of excessive current and a carbon part of the resin turns into a connecting state in circuit-wise and also, when a bonding wire is used as an alternative of a fuse, a bonding wire volume in the resin and a bonding wire route volume in the resin are unchanged at the time of meltdown by inflow of the excessive current, so that no meltdown takes place. <P>SOLUTION: Since the fuse or a fuse alternative part is covered by a paste material with less content of a carbon component and becoming porous after being dried, carbonizing by heat at inflow of excessive current and unmelting at the time of using of a bonding wire as an alternative for a fuse are prevented by using the porous state after thermal curing. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor device.

  FIG. 5 shows a conventional semiconductor device having a current limiting fuse. A circuit is configured by mounting circuit components such as a semiconductor chip 3, a chip-type resistor or a chip-type capacitor 4 on the conductor pattern 1 on the insulating substrate 2 on which the conductor pattern 1 is formed. This is a semiconductor device in which a surface mount type or insertion mount type fuse is incorporated as a component.

  In the prior art, the semiconductor device is prevented from being ignited by incorporating a commercially available fuse in the semiconductor device in which a circuit is formed for current limiting. However, the use of commercially available fuses leads to an increase in material costs and an increase in product size.

  When bonding wires are used as an alternative to commercially available fuses, it is necessary to coat with resin in order to protect the bonding wires from external forces. In this case, the heat at the time of fusing when an excessive current flows into the bonding wires As a result, the resin is carbonized, and the carbonized portion of the resin is connected in a circuit, so that the function of the fuse is not achieved.

  When a bonding wire is used as an alternative to a commercially available fuse, it is necessary to coat with resin to protect the bonding wire from external force. In this case, the resin must be melted when an excessive current flows into the bonding wire. Since there is no change in the bonding wire volume in the resin and the bonding wire path volume in the resin, it does not melt and does not function as a fuse.

  When a chip resistor is used as an alternative to a commercially available fuse, coating may be performed with resin. In this case, the resin is carbonized due to heat generated when an excessive current flows into the chip resistor, and the carbonized portion of the resin is The circuit is connected and does not function as a fuse.

  When chip-type fuses and pattern fuses are used, coating may be performed with resin, but in this case, the resin will carbonize due to the heat generated when an excessive current flows into the fuse, and the carbonized part of the resin is It becomes connected and does not function as a fuse.

  As a solution to the above problem, it is desired to use an arc extinguishing material generally used in a fuse as a protective material, but it is difficult to assemble the arc extinguishing material as a protective material.

  The present invention is intended to solve such problems of the prior art, and prevents carbonization of the resin due to heat when an excessive current flows in, and realizes reliable fusing due to an excessive current when using a bonding wire. It is intended to do.

  In order to solve the above-mentioned problems, the present invention uses a paste material that has a low carbon content and is in a porous state after drying instead of an arc extinguishing material that is generally used in a fuse as an alternative part of a fuse. As a result, assembly is possible as a protective material.

  The first action of the above problem solving means is as follows. Paste material that has a low carbon content and is in a porous state after drying has very little carbon. Therefore, the fuse replacement part is protected by a paste material that has a low carbon content and is in a porous state after drying. There is no spread of fire without carbonization due to the heat generated when inflow.

  In addition, as a second action, the paste material that has a low carbon content and becomes porous after drying is porous after heat drying. Therefore, when a bonding wire is used as an alternative to the fuse, As for unmelted cutting, external force protection and reliable fusing can be obtained by coating the bonding wire portion with a paste material that has a low carbon component content and becomes porous after drying.

  The paste material that has a low carbon component content and is in a porous state after drying can be handled in the same manner as a resin rather than a powder such as an arc extinguishing material, and can be assembled.

  By using a paste material that has a low carbon content and becomes porous after drying, it can have the same function as a fuse having an arc extinguishing material on an insulating substrate, and the material cost of a semiconductor device can be reduced. Is possible.

  Hereinafter, embodiments of the present invention will be described with reference to FIGS.

  In the figure, reference numeral 2 denotes an insulating substrate on which a conductor pattern 1 is formed. On the conductor pattern, a semiconductor chip 3, a bonding wire 8 for connecting the semiconductor chip 3 and the conductor pattern 1 on the insulating substrate 2, a coating resin 7 for protecting the semiconductor chip 3, a surface mounting component / insertion mounting component 4, etc. are mounted. Has been. Hereinafter, the same components are denoted by the same reference numerals and description thereof is omitted.

FIG. 1 shows a semiconductor device in which a current limiting function is added by a bonding wire. Bonding wires 5a are connected between the conductor patterns by wire bonding so as to close the circuit on the conductor pattern 1 that can be wire-bonded formed on the insulating substrate 2. The entire bonding wire including the bonding portion or the bonding connection portion is coated with the paste material 6 that has a low carbon component content and becomes dry after drying, and is cured by heat treatment to protect the bonding wire.

  The bonding wire materials used in FIG. 1 include those made of aluminum and those made of gold.

  The number of bonding wires used in FIG. 1 can be changed according to the current limit level.

  As for the bonding wire diameter used in FIG. 1, the diameter size can be changed in accordance with the level of current limitation.

FIG. 2 is a diagram in which a current limiting function is added by a chip-type fuse in the semiconductor device. Chip-type fuses 5b are mounted and connected between the conductor patterns to close the circuit on the conductor pattern 1 formed on the insulating substrate 2. The entire chip fuse 5b including the connecting portion is coated with a paste material 6 that has a low carbon component content and is in a porous state after being dried, and is cured by heat treatment for protection.

FIG. 3 shows a semiconductor device in which a current limiting function is added by a chip resistor. A chip resistor 5c is mounted and connected between the conductor patterns to close the circuit on the conductor pattern 1 formed on the insulating substrate 2. The entire chip resistor 5c including the connecting portion is coated with a paste material 6 that has a low carbon component content and becomes porous after drying, and is cured by heat treatment for protection.

FIG. 4 is a diagram in which a current limiting function is added by a pattern fuse in the semiconductor device. A pattern fuse d is formed between the conductor patterns so as to close the circuit on the conductor pattern 1 formed on the insulating substrate 2. The entire pattern fuse 5d is coated with a paste material 6 that has a low carbon component content and becomes porous after drying, and is cured by heat treatment for protection.

  1-4 may be coated with a resin or the like as a final form.

  In the semiconductor device of FIGS. 1 to 4, as a final form, the entire paste material 6 that has a low carbon component content and becomes porous after drying may be coated with a resin or the like.

Typical materials for the paste material 6 having a low carbon component content and becoming porous after drying include a paste-like protective glass material for forming a thick film substrate, and an alumina paste before firing at the time of manufacturing the thick film substrate.

The figure which shows the Example of the wire bonding of this invention. The figure which shows the Example of the chip-type fuse of this invention. The figure which shows the Example of the chip type resistor of this invention. The figure which shows the Example of the pattern fuse of this invention. Conventional typical semiconductor device.

Explanation of symbols

1. A conductor pattern on an insulating substrate,
2. Insulating substrate,
3. Semiconductor chip,
4). 4. Surface mount component, insertion mount component a. Bonding wire,
b. Chip type fuse,
c. Chip type resistor,
d. pattern fuse,
6). Paste material that has a low carbon content and becomes porous after drying,
7). Semiconductor chip coating resin8. Semiconductor chip-Conductor pattern connection bonding wire on insulating substrate

Claims (8)

A wire for wire bonding is stretched over the conductor pattern on the insulating substrate on which the conductor pattern is formed, and the porous state is reduced after drying with a low carbon component content on the wire and the first bonding side and the second bonding side for arc extinction. A semiconductor device having a current limiting fuse on an insulating substrate, which is covered with a paste material. A paste in which a chip-type fuse is surface-mounted on a conductor pattern on an insulating substrate on which a conductor pattern is formed, and the entire content including the connection portion of the chip-type fuse is used for arc extinction, and the content of carbon component is low and it becomes a porous state after drying. A semiconductor device having a current limiting fuse on an insulating substrate, characterized by being covered with a material. A paste on which a chip-type resistor is surface-mounted on the conductor pattern on the insulating substrate on which the conductor pattern is formed, and the entire content including the connection part of the chip-type resistor is used for arc extinction and has a low carbon content and becomes a porous state after drying. A semiconductor device having a current limiting fuse on an insulating substrate, characterized by being covered with a material. A semiconductor device having a current limiting fuse on an insulating substrate, wherein the upper surface of the pattern fuse formed on the insulating substrate is covered with a paste material having a low carbon component content and being in a porous state after being dried for arc extinction. 2. The semiconductor device according to claim 1, wherein the bonding wire is made of aluminum. 2. The semiconductor device according to claim 1, wherein the bonding wire is made of gold. The bonding wire according to claim 1 is a semiconductor device capable of changing a current value limited by changing a bonding wire diameter for each material of claims 5 and 6. The bonding wire according to claim 1 is a semiconductor device capable of changing a current value limited by connecting a plurality of bonding wires in parallel according to the materials of claims 5 and 6.

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