JP2007194481A - Substrate processing equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of unifying wafer process conditions irrespective of the presence or absence of swap conveyance.
A processing chamber for processing a substrate, a transfer means for transferring the substrate to the processing chamber, and a predetermined operation schedule that defines a timing for transferring the substrate by the transfer means. A control unit that controls transfer of the substrate, and the control unit transfers the substrate into the processing chamber by the transfer unit, and if the processed substrate does not exist in the processing chamber to be transferred, the transfer unit The transfer of the substrate into the processing chamber by the means is delayed by a predetermined time.
[Selection] Figure 5

Description

  The present invention relates to execution control of a substrate transfer sequence in a substrate processing apparatus.

  FIG. 7 is a diagram illustrating the relationship between modules and processes related to process control in a conventional substrate processing apparatus. In the figure, the schedule generation module has a role of generating operation schedule data from the conveyance time and the time of the process recipe, and the schedule execution management module monitors processing based on the generated operation schedule data and will be described later. The MF robot execution control module has a role of executing the specified transfer process at the requested timing, and the LL robot execution control module has the role of requesting the execution of the execution control module. The process execution control module has a role of executing a designated process at a requested timing.

In the conventional substrate processing apparatus, when processing a wafer by automatic operation, the processing time in the operation schedule is roughly divided into the following processing times (1) to (7). When a single wafer is processed by the substrate processing apparatus, the processing is performed in the order of (1) to (7) as shown below (see FIG. 8).
(1) A load lock in which a wafer transfer machine (LL robot) takes out a wafer from a load port holding a plurality of wafers and holds a plurality of wafers transferred to another wafer transfer machine (MF robot) Time to transport to chamber (LP_LL).
(2) Time (LL_MF) for the wafer transfer machine (MF robot) to take out the wafer from the load lock chamber.
(3) Time (MF_PC) during which the wafer transfer machine (MF robot) carries the wafer to the processing furnace (chamber).
(4) Time for carrying out the process in the processing furnace (PROC).
(5) Time (PC_MF) for the wafer transfer machine (MF robot) to take out the wafer from the processing furnace.
(6) Time (MF_LL) when the wafer transfer machine (MF robot) carries the wafer to the load lock chamber.
(7) Time (LL_LP) when the wafer transfer machine (LL robot) takes out the wafer from the load lock chamber and returns it to the load port.

The above-described wafer processing sequence is not only performed for only one wafer, but may be performed automatically for a plurality of wafers (see FIG. 9). In such a case, the wafers are simultaneously exchanged and transferred (swap transfer) so that a plurality of wafers can be processed efficiently and continuously. When this swap transport is performed, the time used in the operation schedule is the time for swap transport (SWAP). Also, the time for swap transport is as follows:
MF_PC <SWAP <MF_PC + PC_MF
It is the relationship.

  When there is an execution request from the schedule execution management module, the MF robot execution control module immediately carries the wafer. For this reason, wafers that are not swapped are loaded into the processing furnace earlier than wafers that have been swapped.

  As described above, the wafers quickly loaded into the processing furnace are in a waiting (staying) state until the process is started, and when a plurality of wafers are processed in an automatic operation, the wafers are fixed in a fixed time. Since the schedule is managed, there is a problem that the process execution conditions for each wafer cannot be unified (see FIG. 10).

  The present invention has been made in order to solve the above-described problems. Regardless of the presence / absence of swap transport, the time required for the substrate to be processed to stay in the processing chamber is the same, so that It is an object of the present invention to provide a substrate processing apparatus that can have the same process conditions.

  In order to solve the above-described problems, a substrate processing apparatus according to the present invention defines a processing chamber for processing a substrate, a transfer means for transferring the substrate to the processing chamber, and a timing for transferring the substrate by the transfer means. And a control unit that controls the transfer of the substrate by the transfer unit based on a predetermined operation schedule, and the control unit performs a process to be transferred when the transfer unit transfers the substrate into the processing chamber. When no processed substrate exists in the chamber, the transfer of the substrate into the processing chamber by the transfer means is delayed by a predetermined time.

  Further, the substrate processing method according to the present invention includes a control step for controlling the transport of the substrate by the transport unit based on a predetermined operation schedule that defines the timing of transporting the substrate by the transport unit, and the substrate by the transport unit. A determination step for determining whether or not a processed substrate exists in the processing chamber to be transferred when the substrate is transferred to the processing chamber for processing the substrate, and the processing chamber to be transferred in the determination step. And a delay step of delaying the transfer of the substrate into the processing chamber by the transfer means by a predetermined time when it is determined that there is no processed substrate.

  Further, the substrate processing method according to the present invention includes a processing chamber for processing a substrate, and a transfer means for holding the substrate and transferring the substrate to the processing chamber, and the time for the transfer means to transfer the substrate and the processing chamber. In a substrate processing apparatus that performs substrate processing according to an operation schedule determined from the processing time of a substrate, whether or not a processed substrate exists in the processing chamber to be transferred when the unprocessed substrate is transferred to the processing chamber And a delay step of delaying the transfer of the unprocessed substrate into the processing chamber by a predetermined time when it is determined that the processed substrate does not exist in the determination step. To do.

  As described above in detail, according to the present invention, since the transfer time is adjusted and the wafer is not retained in the processing chamber, the process conditions for all wafers can be made the same regardless of the presence or absence of the swap transfer. A substrate processing apparatus can be provided.

  Embodiments of the present invention will be described below with reference to the drawings. 1 is an overall configuration diagram of a substrate processing apparatus according to an embodiment of the present invention as viewed from above, FIG. 2 is an overall configuration diagram of the substrate processing apparatus according to the present embodiment as viewed from the side, and FIG. 3 is an embodiment of the present invention. It is a block diagram which shows the outline of the processing furnace in the substrate processing apparatus by.

  Hereinafter, in the substrate processing apparatus according to the present embodiment, it is assumed that a FOUP (front opening unified pod) is used as a carrier for transporting a substrate such as a wafer. In the following description, front, rear, left and right are based on FIG. That is, with respect to the paper surface shown in FIG. 1, the front is below the paper surface, the back is above the paper surface, and the left and right are the left and right of the paper surface.

  As shown in FIGS. 1 and 2, the substrate processing apparatus according to the present embodiment has a first transfer configured in a load-lock chamber structure that can withstand a pressure (negative pressure) less than atmospheric pressure such as a vacuum state. The housing 103 of the first transfer chamber 103 is formed in a box shape in which the plan view is hexagonal and the upper and lower ends are closed. In the first transfer chamber 103, a first wafer transfer machine 112 for transferring the wafer 200 under a negative pressure is installed. The first wafer transfer device 112 is configured to be moved up and down by the elevator 115 while maintaining the airtightness of the first transfer chamber 103.

  The two side walls located on the front side of the six side walls of the housing 101 are connected to the carry-in spare chamber 122 and the carry-out spare chamber 123 via gate valves 244 and 127, respectively. Each has a load lock chamber structure that can withstand negative pressure. Further, a substrate placing table 140 for loading and unloading chambers is installed in the spare chamber 122, and a substrate placing table 141 for unloading chambers is installed in the spare chamber 123.

  A second transfer chamber 121 used at substantially atmospheric pressure is connected to the front side of the preliminary chamber 122 and the preliminary chamber 123 via gate valves 128 and 129. A second wafer transfer machine 124 for transferring the wafer 200 is installed in the second transfer chamber 121. The second wafer transfer device 124 is configured to be moved up and down by an elevator 126 installed in the second transfer chamber 121 and is configured to be reciprocated in the left-right direction by a linear actuator 132. .

  As shown in FIG. 1, a notch or orientation flat aligning device 106 is installed on the left side of the second transfer chamber 121. Further, as shown in FIG. 2, a clean unit 118 for supplying clean air is installed in the upper part of the second transfer chamber 121.

  As shown in FIGS. 1 and 2, on the front side of the casing 125 of the second transfer chamber 121, a wafer loading / unloading port 134 for loading / unloading the wafer 200 into / from the second transfer chamber 121. A pod opener 108 is installed. An IO stage 105 is installed on the opposite side of the pod opener 108 across the wafer loading / unloading port 134, that is, on the outside of the housing 125. The pod opener 108 includes a closure 142 that can open and close the cap 100 a of the pod 100 and close the wafer loading / unloading port 134, and a drive mechanism 136 that drives the closure 142, and the pod placed on the IO stage 105. By opening and closing the 100 cap 100a, the wafer 200 can be taken in and out of the pod 100. The pod 100 is supplied to and discharged from the IO stage 105 by an in-process transfer device (RGV) (not shown).

  As shown in FIG. 1, a first processing furnace (process) for performing a desired process on a wafer is provided on two side walls located on the rear side (back side) of the six side walls of the casing 101. Chamber) 202 and a second processing furnace (processing chamber) 137 are connected to each other through gate valves 130 and 131, respectively. Each of the first processing furnace 202 and the second processing furnace 137 is a cold wall type processing furnace. In addition, a first cooling unit 138 and a second cooling unit 139 are connected to the remaining two opposite side walls of the six side walls of the housing 101, respectively. Each of the cooling unit 138 and the second cooling unit 139 is configured to cool the processed wafer 200.

  Further, the substrate processing apparatus according to the present embodiment includes a CPU (control unit) 901 and a memory 902. The CPU 901 has a role of performing various processes in the substrate processing apparatus, and also has a role of realizing various functions by executing a program stored in the memory 902. In addition, the CPU 901 controls the transport of the substrate by the transport unit based on a predetermined operation schedule that defines the timing of transporting the substrate by the first transfer machine, the second transfer machine, and the like. The memory 902 includes, for example, a ROM and a RAM, and has a role of storing various information and programs used in the substrate processing apparatus.

  The present embodiment also includes the above-described schedule generation module, schedule execution management module, MF robot execution control module, LL robot execution control module, and process execution control module. The functions of these modules are realized by the CPU 901.

  Hereinafter, processing steps using the substrate processing apparatus having the above-described configuration will be described.

  In a state where 25 unprocessed wafers 200 are accommodated in the pod 100, they are transferred to the substrate processing apparatus for performing the processing process by the in-process transfer apparatus. As shown in FIGS. 1 and 2, the pod 100 that has been transported is delivered and placed on the IO stage 105 from the in-process transport device. The cap 100a of the pod 100 is removed by the pod opener 108, and the wafer loading / unloading port of the pod 100 is opened.

  When the pod 100 is opened by the pod opener 108, the second wafer transfer machine 124 installed in the second transfer chamber 121 picks up the wafer 200 from the pod 100 and loads it into the preliminary chamber 122. Is transferred to the substrate table 140. During the transfer operation, the gate valve 244 on the first transfer chamber 103 side of the preliminary chamber 122 is closed, and the negative pressure in the first transfer chamber 103 is maintained. When the transfer of a predetermined number of, for example, 25 wafers 200 stored in the pod 100 to the substrate table 140 is completed, the gate valve 128 is closed, and the inside of the preliminary chamber 122 is negatively charged by an exhaust device (not shown). Exhausted.

  When the pressure in the preliminary chamber 122 reaches a preset pressure value, the gate valve 244 is opened, and the preliminary chamber 122 and the first transfer chamber 103 communicate with each other. Subsequently, the first wafer transfer device 112 in the first transfer chamber 103 picks up the wafer 200 from the substrate table 140 and loads it into the first transfer chamber 103. After the gate valve 244 is closed, the gate valve 130 is opened, and the first transfer chamber 103 and the first processing furnace 202 are communicated with each other. Subsequently, the first wafer transfer device 112 carries the wafer 200 from the first transfer chamber 103 into the first processing furnace 202 and transfers it to the support in the first processing furnace 202. After the gate valve 130 is closed, a processing gas is supplied into the first processing furnace 202 and a desired processing is performed on the wafer 200.

  When the processing on the wafer 200 is completed in the first processing furnace 202, the gate valve 130 is opened, and the processed wafer 200 is carried out to the first transfer chamber 103 by the first wafer transfer device 112. After unloading, the gate valve 130 is closed.

  The first wafer transfer device 112 transports the wafer 200 unloaded from the first processing furnace 202 to the first cooling unit 138, and the processed wafer is cooled.

  When the processed wafer 200 is transferred to the first cooling unit 138, the first wafer transfer machine 112 performs the first wafer transfer on the substrate stage 140 in the preliminary chamber 122 in the same manner as described above. The wafer 200 is transferred to the processing furnace 202, and a desired process is performed on the wafer 200 in the first processing furnace 202.

  When a preset cooling time has elapsed in the first cooling unit 138, the cooled wafer 200 is unloaded from the first cooling unit 138 to the first transfer chamber 103 by the first wafer transfer device 112.

  After the cooled wafer 200 is unloaded from the first cooling unit 138 to the first transfer chamber 103, the gate valve 127 is opened. The first wafer transfer device 112 transports the wafer 200 unloaded from the first cooling unit 138 to the preliminary chamber 123 and transfers it to the substrate table 141, and then the preliminary chamber 123 is closed by the gate valve 127.

  By repeating the above operation, a predetermined number of wafers 200, for example, 25 wafers 200 carried into the preliminary chamber 122 are sequentially processed.

  When the processing for all the wafers 200 loaded into the spare chamber 122 is completed, all the processed wafers 200 are stored in the spare chamber 123, and the spare chamber 123 is closed by the gate valve 127, the inside of the spare chamber 123 is not stored. The pressure is returned to approximately atmospheric pressure by the active gas. When the inside of the preliminary chamber 123 is returned to approximately atmospheric pressure, the gate valve 129 is opened, and the cap 100 a of the empty pod 100 placed on the IO stage 105 is opened by the pod opener 108. Subsequently, the second wafer transfer device 124 in the second transfer chamber 121 picks up the wafer 200 from the substrate placing table 141 and carries it out to the second transfer chamber 121, and carries the wafer in and out of the second transfer chamber 121. It is stored in the pod 100 through the outlet 134. When the storage of the 25 processed wafers 200 into the pod 100 is completed, the cap 100 a of the pod 100 is closed by the pod opener 108. The closed pod 100 is transferred from the top of the IO stage 105 to the next process by the in-process transfer apparatus.

  The above operation has been described by taking the case where the first processing furnace 202 and the first cooling unit 138 are used as an example, but also when the second processing furnace 137 and the second cooling unit 139 are used. Similar operations are performed. In the above-described substrate processing apparatus, the spare chamber 122 is used for carrying in and the spare chamber 123 is used for carrying out. However, the spare chamber 123 may be used for carrying in, and the spare chamber 122 may be used for carrying out.

  Moreover, the 1st processing furnace 202 and the 2nd processing furnace 137 may perform the same process, respectively, and may perform another process. When performing another process in the first process furnace 202 and the second process furnace 137, for example, after the process on the wafer 200 is performed in the first process furnace 202, another process is performed in the second process furnace 137. Processing may be performed. Further, after performing a process on the wafer 200 in the first processing furnace 202, when another process is performed in the second processing furnace 137, it passes through the first cooling unit 138 or the second cooling unit 139. You may do it.

  Next, a processing furnace of the substrate processing apparatus suitably used in the present embodiment will be described in detail with reference to FIG.

  Note that the substrate processing apparatus suitably used in this embodiment includes a main control unit 284, and the main control unit 284 controls operations of the respective units constituting the substrate processing apparatus and the processing furnace. Here, an example in which the CPU 901 and the main control unit 284 are separately arranged is shown, but the present invention is not limited to this, and the functions of the CPU 901 and the main control unit 284 may be realized by one CPU. it can.

  The main control unit 284 includes a gas control unit 285 controlled by the main control unit 284, a drive control unit 286, a heating control unit 287, and a temperature detection unit 288.

  The processing furnace 202 according to the present invention is configured as a single wafer CVD furnace (cold wall system), and includes a chamber 223 that forms a processing chamber 201 for processing a wafer (semiconductor wafer) 200 as a substrate to be processed. Yes. The chamber 223 is formed in a cylindrical shape in which a chamber lid 224, a chamber main body 225, and a chamber bottom 226 are combined, and upper and lower end surfaces are closed.

  A wafer loading / unloading port 250 that is opened and closed by a gate valve 244 is opened horizontally in the middle of the cylindrical wall of the chamber body 225 of the chamber 223. The wafer loading / unloading port 250 is a wafer 200 that is a substrate to be processed. Is formed so that it can be carried into and out of the processing chamber 201 by a wafer transfer device (not shown in FIG. 3). That is, the wafer 200 is carried into and out of the processing chamber 201 from the wafer loading / unloading port 250 while being mechanically supported from below by the wafer transfer device.

  An exhaust port 235 connected to an exhaust device (not shown) such as a vacuum pump communicates with the processing chamber 201 at the upper portion of the wall surface of the chamber body 225 facing the wafer loading / unloading port 250. The inside of the processing chamber 201 is exhausted by an exhaust device.

  Further, an exhaust buffer space 249 communicating with the exhaust port 235 is formed in an annular shape in the upper part of the chamber body 225, and acts so that the exhaust is performed uniformly over the entire surface of the wafer 200 together with the cover plate 248. .

  The cover plate 248 extends on the susceptor (substrate holding means) 217 so as to cover the edge portion of the wafer 200 in a non-contact manner, and controls a CVD film formed on the edge portion of the wafer 200. Used for.

  A shower head 236 for supplying a processing gas is integrally incorporated in the chamber lid 224 of the chamber 223. That is, a gas supply pipe 232 is inserted in the ceiling wall of the chamber lid 224, and an open / close valve 243, a flow rate control device for introducing process gases A and B such as source gas and purge gas into each gas supply pipe 232, for example. A gas supply device comprising an MFC (mass flow controller) 241 is connected. A shower plate 240 formed in a disk shape is horizontally fixed to the lower surface of the chamber lid 224 at a distance from the gas supply pipe 232. The shower plate 240 has a plurality of gas outlets (hereinafter referred to as outlets). 247) is established so that 247 is uniformly arranged over the entire surface and circulates in the upper and lower spaces.

  A buffer chamber 237 is formed by an inner space defined by the inner side surface of the chamber lid 224 and the upper surface of the shower plate 240, and the buffer chamber 237 distributes the processing gas 230 introduced into the gas supply pipe 232 as a whole evenly. It diffuses and it blows out from each blower outlet 247 uniformly in the shape of a shower.

  An insertion hole 278 is formed in a circular shape at the center of the chamber bottom 226 of the chamber 223, and a support shaft 276 formed in a cylindrical shape is inserted into the processing chamber 201 from below on the center line of the insertion hole 278. The support shaft 276 is raised and lowered by an elevating mechanism (elevating means) 268 using an air cylinder device or the like.

  A heating unit 251 as a heating device (heating means) is concentrically arranged at the upper end of the support shaft 276 and fixed horizontally. The heating unit 251 is moved up and down by the support shaft 276. That is, the heating unit 251 includes a support plate 258 formed in a disc shape, and the support plate 258 is fixed concentrically to the upper end opening of the support shaft 276. A plurality of electrodes 253 that also serve as columns are vertically erected on the upper surface of the support plate 258, and a heater 207 that is formed in a disk shape and controlled to be divided into a plurality of regions is bridged between the upper ends of these electrodes 253. It is fixed. Electrical wires 257 for these electrodes 253 are inserted into the hollow portions of the support shaft 276.

  A reflection plate 252 is fixed to the support plate 258 below the heater 207, and heat generated from the heater 207 is reflected to the susceptor 217 side to act on efficient heating.

  A radiation thermometer 264 that is a temperature detection device (temperature detection means) is introduced from the lower end of the support shaft 276, and the tip of the radiation thermometer 264 is installed with a predetermined gap with respect to the back surface of the susceptor 217. . The radiation thermometer 264 is composed of a combination of a rod made of quartz and an optical fiber, detects radiation emitted from the back surface of the susceptor 217 (for example, the back surface corresponding to the divided region of the heater 207), and the back surface temperature of the susceptor 217. (The temperature of the wafer 200 can be calculated from the relationship between the temperature of the wafer 200 and the susceptor 217 acquired in advance), and the heating condition of the heater 217 is controlled based on the calculation result.

  On the outside of the support shaft 276 of the insertion hole 278 of the chamber bottom 226, a rotating shaft 277 formed in a cylindrical shape having a larger diameter than the support shaft 276 is disposed concentrically and is inserted into the processing chamber 201 from below. The rotating shaft 277 is moved up and down together with the support shaft 276 by the lifting mechanism 268. A rotating body 227 is concentrically arranged at the upper end of the rotating shaft 277 and is fixed horizontally. The rotating body 227 is rotated by the rotating shaft 277. That is, the rotating body 227 includes a rotating plate 229 formed in a donut-shaped flat plate and a rotating cylinder 228 formed in a cylindrical shape, and the inner peripheral edge of the rotating plate 229 is the upper end of a cylindrical rotating shaft 277. A rotating cylinder 228 is concentrically fixed to the outer peripheral edge of the upper surface of the rotating plate 229 and is fixed to the opening. A susceptor 217 formed in a disk shape using silicon carbide, aluminum nitride or the like is placed on the upper end of the rotating cylinder 228 of the rotating body 227 so as to close the upper end opening of the rotating cylinder 228.

  A wafer elevating device 275 is installed on the rotating body 227. The wafer elevating device 275 is configured by protruding pins (substrate protruding means) 266 and 274 provided on each of two elevating rings formed in a circular ring shape. The rotation side ring is disposed on the rotating plate 229 of the rotating body 227 concentrically with the support shaft 276. On the lower surface of the rotation side ring, a plurality of (three in the present embodiment) protruding pins (hereinafter referred to as rotation side pins) 274 are arranged at equal intervals in the circumferential direction so as to face downward in the vertical direction. Each rotation-side pin 274 is slidably fitted into each guide hole 255 that is arranged on the rotation plate 229 on a line concentric with the rotation cylinder 228 and opened in the vertical direction. The lengths of the rotation-side pins 274 are set to be equal to each other so that the rotation-side ring can be pushed up horizontally, and are set to correspond to the push-up amount of the wafer from above the susceptor. The lower end of each rotation-side pin 274 is opposed to the bottom surface of the processing chamber 201, that is, the upper surface of the chamber bottom 226 so as to be separable.

  On the support plate 258 of the heating unit 251, another lifting ring (hereinafter referred to as a heater side ring) formed in a circular ring shape is disposed concentrically with the support shaft 276. On the lower surface of the heater side ring, a plurality of (three in the present embodiment) protruding pins (hereinafter referred to as heater side pins) 266 are arranged at equal intervals in the circumferential direction and vertically downward. Each heater-side pin 266 is slidably fitted into each guide hole 254 that is disposed on the support plate 258 on a line concentric with the support shaft 276 and opened in the vertical direction. The lengths of these heater-side pins 266 are set to be equal to each other so that the heater-side ring can be pushed up horizontally, and their lower ends are opposed to the upper surface of the rotation-side ring with an appropriate air gap. That is, these heater side pins 266 do not interfere with the rotating side ring when the rotating body 227 rotates.

  In addition, a plurality of (three in the present embodiment) protruding pins (hereinafter referred to as protruding portions) 289 are arranged on the upper surface of the heater side ring at equal intervals in the circumferential direction. The upper end of the protruding portion 289 is opposed to the heater 207 and the insertion hole 256 of the susceptor 217. The lengths of the protruding portions 289 are set to be equal to each other so that the wafer 200 placed on the susceptor 217 is horizontally floated from the susceptor 217 through the heater 207 and the insertion hole 256 of the susceptor 217 from below. The lengths of the protruding portions 289 are set so that the upper ends thereof do not protrude from the upper surface of the heater 207 when the heater-side ring is seated on the support plate 258. That is, these protrusions 266 do not interfere with the susceptor 217 during rotation of the rotating body 227 and do not hinder the heating of the heater 207.

  The chamber 223 is horizontally supported by a plurality of support columns 280. Elevating blocks 281 are fitted to these columns 280 so as to be movable up and down, and an elevating platform 282 that is moved up and down by an elevating drive device (not shown) using an air cylinder device or the like is interposed between the elevating blocks 281. Is built. A susceptor rotating mechanism 267 that rotates the support shaft 276 and the rotating body 227 is installed on the lifting platform 282. A bellows 279 is provided between the susceptor rotating mechanism 267 and the chamber 223 so as to air outside the rotating shaft 277. It is interposed so as to be hermetically sealed.

  The gas control unit 285 is connected to the MFC 241 and the open / close valve 243 and controls the gas flow rate and supply. The drive control unit 286 is connected to the susceptor rotating mechanism 267 and the lifting mechanism 268 and controls the driving thereof. The heating control unit 287 is connected to the heater 207 via the wiring 257 and controls the heating state of the heater 207. The temperature detector 288 is connected to the radiation thermometer 264, detects the temperature of the susceptor 217, and is used for heating control of the heater 207 in cooperation with the heating controller.

  Next, by describing the operation of the processing furnace according to the above configuration, a film forming process in a semiconductor device manufacturing method (substrate processing method) according to an embodiment of the present invention will be described.

  When the wafer 200 is loaded / unloaded, the rotating body 227 and the heating unit 251 are lowered to the lower limit position by the rotating shaft 277 and the support shaft 276. Then, the lower end of the rotation-side pin 274 of the wafer elevating device 275 abuts the bottom surface of the processing chamber 201, that is, the upper surface of the chamber bottom 226, so that the rotation-side ring rises relative to the rotating body 227 and the heating unit 251. The raised rotation side ring lifts the heater side ring by pushing up the heater side pin 266. When the heater-side ring is lifted, the three projecting upper portions 289 standing on the heater-side ring pass through the heater 207 and the insertion hole 256 of the susceptor 217 and protrude from the upper surface of the susceptor 217. In this state, the gate valve (gate valve) 244 is opened, and the wafer 200 is loaded into the chamber 233 from the wafer loading / unloading port 250 by a wafer transfer device (not shown in FIG. 3).

  A substrate holding plate (hereinafter referred to as a plate) provided in the wafer transfer apparatus transfers the wafer 200 to a position above the susceptor 217 so that the center of the wafer 200 coincides with the center of the susceptor 217. When the wafer 200 is transferred to a predetermined position, the plate is slightly lowered, so that the wafer 200 is held by the three protruding portions 289. The plate that has transferred the wafer 200 to the wafer lifting / lowering device 275 moves out of the processing chamber 201 from the wafer loading / unloading port 250. When the plate leaves the processing chamber 201, the wafer loading / unloading port 250 is closed by the gate valve 244.

  When the gate valve 244 is closed, the rotating body 227 and the heating unit 251 are lifted by the lifting platform 282 with respect to the processing chamber 201 via the rotating shaft 277 and the support shaft 276. As the rotating body 227 and the heating unit 251 rise, the projecting upper portion 289 and the projecting pins 266 and 274 are lowered relative to the rotating body 227 and the heating unit 251, and as shown in FIG. It is completely transferred onto the susceptor 217. The rotating shaft 277 and the support shaft 276 are stopped at a position where the upper end of the protruding portion 289 is at a height close to the lower surface of the heater 207.

  On the other hand, the processing chamber 201 is exhausted by an exhaust device (not shown) such as a vacuum pump connected to the exhaust port 235. At this time, the vacuum atmosphere in the processing chamber 201 and the external atmospheric pressure atmosphere are isolated by the bellows 279.

  Subsequently, the rotating body 227 is rotated by the susceptor rotating mechanism 267 via the rotating shaft 277.

  While the rotating body 227 is rotating, the rotating side pin 274 is separated from the bottom surface of the processing chamber 201 and the heater side pin 266 is separated from the rotating side ring. In addition, the heating unit 251 can maintain a stopped state. That is, in the wafer elevating device 275, the rotation side ring and the rotation side pin 274 rotate together with the rotation drum 227, and the heater side ring, the heater side pin 266 and the protruding portion 289 are stopped together with the heating unit 251.

  When the temperature of the wafer 200 rises to the processing temperature and the exhaust amount of the exhaust port 235 and the rotational operation of the rotating body 227 are stabilized, the processing gas 230 is supplied to the supply pipe 232 as shown by the solid arrow in FIG. To be introduced. The processing gas 230 introduced into the gas supply pipe 232 flows into the buffer chamber 237 functioning as a gas dispersion space, and diffuses radially outward in the radial direction of the shower plate 240, so that each gas outlet of the shower plate 240 is discharged. From 247, the flow becomes substantially uniform and blows out toward the wafer 200 like a shower. The processing gas 230 blown out in the form of a shower from the group of the outlets 247 passes through the space above the cover plate 248 and is sucked into the exhaust port 235 via the exhaust buffer space 249 and exhausted.

  At this time, since the wafer 200 on the susceptor 217 supported by the rotating body 227 is rotating, the processing gas 230 blown out in a shower form from the group of the outlets 247 is in contact with the entire surface of the wafer 200 evenly. . Since the processing gas 230 contacts the entire surface of the wafer 200 evenly, the film thickness distribution and film quality distribution of the CVD film formed on the wafer 200 by the processing gas 230 are uniform over the entire surface of the wafer 200.

  Further, since the heating unit 251 is not rotated by being supported by the support shaft 276, the temperature distribution of the wafer 200 rotated by the rotating body 227 is uniformly controlled over the entire surface. As described above, the temperature distribution of the wafer 200 is uniformly controlled over the entire surface, whereby the film thickness distribution and film quality distribution of the CVD film formed on the wafer 200 are uniformly controlled over the entire surface of the wafer 200.

  When the predetermined processing time has elapsed, the operation of the susceptor rotating mechanism 267 is stopped. When the operation of the susceptor rotating mechanism 267 is stopped, as described above, the rotating body 227 and the heating unit 251 are lowered to the loading / unloading position by the lifting platform 282 via the rotating shaft 277 and the support shaft 276. During the lowering, the wafer 200 placed on the upper surface of the susceptor 217 is lifted from the susceptor 217 by the action of the wafer lifting device 275.

  When the protruding portion 289 of the wafer lifting device 275 lifts the wafer 200 from the upper surface of the susceptor 217, an insertion space is formed between the lower space of the wafer 200, that is, the lower surface of the wafer 200 and the upper surface of the susceptor 217. The plate provided in the wafer transfer machine is inserted into the insertion space from the wafer loading / unloading port 250. The plate inserted below the wafer 200 rises to receive the wafer 200 from the protruding portion 289. The plate that has received the wafer 200 moves backward through the wafer loading / unloading port 250 and unloads the wafer 200 from the processing chamber 201. Then, the wafer transfer apparatus that has unloaded the wafer 200 transfers the wafer 200 to a predetermined storage location such as an empty wafer cassette outside the processing chamber 201.

  At this time, since the protruding portion 289 and the insertion hole 256 of the heater 207 and the susceptor 217 are matched accurately and with good reproducibility, there is no possibility that the protruding portion 289 pushes up the susceptor 217 and the heater 207.

  Thereafter, by repeating the above-described operation, a CVD film is formed on the next wafer 200.

FIG. 4 is a diagram showing the relationship between modules and processes related to process control in the substrate processing apparatus according to the present embodiment. In the present embodiment, the MF robot execution control module refers to a predetermined transfer time parameter when there is no wafer to be dispensed and swap transfer is not necessary when receiving support for wafer swap transfer,
SWAP time—Wafer is waited for MF_PC time, and then the wafer is transferred. As a result, the wafer does not stay unnecessarily in the processing furnace, and the timing of loading into the processing furnace is the same as that of other wafers to be swapped, so that the process conditions can be the same ( (See FIG. 5).

  In other words, when the substrate is transferred into the processing chamber by the transfer unit, the CPU 901 delays transfer of the substrate into the processing chamber by the transfer unit by a predetermined time if there is no processed substrate in the processing chamber to be transferred. It has a configuration.

  The transfer means here mainly refers to the first wafer transfer machine (MF robot) 112, but is not limited to this, for example, the first wafer transfer machine (MF robot). 112 and the second wafer transfer machine (LL robot) 124 can also cooperate to cause a delay in conveyance for the predetermined time.

  Subsequently, a substrate processing method according to the present embodiment will be described. FIG. 6 is a flowchart showing each step in the substrate processing method according to the present embodiment.

  The CPU 901 controls the transport of the substrate by the transport unit based on a predetermined operation schedule that defines the timing of transporting the substrate by the transport unit (control step) (S101).

  The CPU 901 determines whether there is a processed substrate in the processing chamber to be transferred when the substrate is transferred to the processing chamber in which the substrate is processed by the transfer means (determination step) (S102).

  If it is determined in the determination step that there is no processed substrate in the processing chamber to be transferred, the CPU 901 delays the transfer of the substrate into the processing chamber by the transfer means by a predetermined time (delay step) (S103). .

  Note that each step in the above-described processing (substrate processing method) in the substrate processing apparatus is realized by causing the CPU 901 to execute a substrate processing program stored in the memory 902.

  As described above, according to the present embodiment, in a semiconductor manufacturing apparatus capable of swapping substrates, when automatic operation is performed using a fixed time scheduling method, the start of conveyance is delayed when loading substrates without swapping. As a result, the process start timing after the substrate is loaded into the processing furnace becomes the same, so that the process conditions can be made the same for all the substrates.

  In addition, although the example which the substrate processing apparatus by this Embodiment is a semiconductor manufacturing apparatus was shown here, it is not restricted to this, The apparatus which processes a glass substrate like an LCD apparatus may be sufficient Needless to say.

  In the above-described embodiment, the content of processing in the processing furnace may be anything, for example, oxidation, diffusion, annealing, or the like.

  As described above, according to the present embodiment, wasteful retention of wafers in the processing chamber can be prevented regardless of the presence / absence of swap transfer, so that the process conditions for each wafer can be made the same. In addition, there is no problem that a difference in film thickness occurs for each wafer.

  Although the present invention has been described in detail according to particular embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention.

It is the whole block diagram which looked at the substrate processing apparatus by embodiment of this invention from upper direction. It is the whole block diagram which looked at the substrate processing apparatus by this Embodiment from the side. It is a block diagram which shows the outline of the processing furnace in the substrate processing apparatus by this Embodiment. It is a figure which shows the relationship between the module relevant to control of the process in the substrate processing apparatus by this Embodiment, and a process. It is a figure for demonstrating the timing when a wafer is carried in into a processing furnace. It is a flowchart which shows each step in the substrate processing method by this Embodiment. It is a figure which shows the relationship between the module relevant to control of the process in the conventional substrate processing apparatus, and a process. It is a figure which shows the process sequence required for the processing of one wafer. It is a figure which shows the relationship of the process sequence in the case of processing with respect to several wafers. It is a figure for demonstrating the problem in the conventional substrate processing apparatus.

Explanation of symbols

112 1st wafer transfer machine, 124 2nd wafer transfer machine, 202 1st processing furnace, 137 2nd processing furnace, 200 wafers, 901 CPU, 902 memory.

Claims (1)

A processing chamber for processing substrates;
Transport means for transporting the substrate to the processing chamber;
A control unit that controls the conveyance of the substrate by the conveyance unit based on a predetermined operation schedule that defines the timing of conveying the substrate by the conveyance unit;
When the substrate is transferred into the processing chamber by the transfer unit, the control unit transfers the substrate into the processing chamber by the transfer unit even when a processed substrate does not exist in the processing chamber to be transferred. A substrate processing apparatus characterized by delaying conveyance by a predetermined time.

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