JP2007157960A - Method of manufacturing semiconductor laser apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor laser apparatus wherein exhaust heat property from a semiconductor laser chip is excellent, and a conductive adhesion layer protruding to a light exit end surface side of the semiconductor laser chip is prevented from being left behind. <P>SOLUTION: A substrate 11 is prepared which comprises a body 11a; and a protrusion 11b constructed integrally with a body 11a on a one end surface S side of the body 11a and having a surface constructed by the same surface as the surface of the body 11a. Then, the semiconductor laser chip 13 is fixed to the surface of the body 11a via a conductive adhesive layer 12 such that the light exit end surface 13a of the semiconductor laser chip 13 and the one end surface S of the body 11a are substantially flush with each other. Then, the conductive adhesive layer 12 protruded onto the protrusion 11b is removed together with the protrusion 11b. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method of manufacturing a semiconductor laser device, and in particular, a semiconductor laser chip is fixed on a heat sink via a solder layer so that a light emitting end face of the semiconductor laser chip and one end face of the heat sink are substantially flush with each other. The present invention relates to a semiconductor laser device.

  Since a semiconductor laser chip is an electronic device that generates heat, it is necessary to release heat to a heat exhaust component such as a heat sink. Therefore, in order to dissipate heat, the semiconductor laser chip is thermally bonded to a heat sink or heat spreader made of a highly heat conductive metal or ceramic via a solder material. In ordinary semiconductor laser devices, solder material is selected with an emphasis on exhaust heat from the semiconductor laser chip. Therefore, excessive solder is supplied to improve the wettability of the solder between the semiconductor laser chip and the heat sink. There are many cases.

  By the way, when the semiconductor laser chip is fixed on the heat sink, in order to prevent vignetting, the light emitting end face of the semiconductor laser chip and the one end face of the heat sink are arranged so as to be substantially the same plane. For this reason, excess solder protrudes to the light emitting end face side of the semiconductor laser chip, and the protruding solder adheres to the light emitting end face of the semiconductor laser chip to form a PN junction short circuit, or the protruding solder swells the laser. In some cases, the light emitting point is blocked, making it difficult to emit laser light.

  In particular, in a semiconductor laser device performing a so-called junction down mount in which the semiconductor laser chip is fixed on the heat sink so that the PN junction branch point is close to the heat sink in order to improve the heat dissipation property of the semiconductor laser chip, A short circuit of the PN junction due to adhesion is easily formed, and the light emitting point is close to the heat sink, so that the light emitting point is easily blocked by the protruding solder.

  Furthermore, a semiconductor laser device may be mounted with a very small optical lens or the like called a microlens when the emitted laser light is transmitted through an optical component to become parallel light or has a focal point. . In this case, since the microlens is mounted in the vicinity of the light emitting end face of the semiconductor laser chip, it may be impossible to mount the microlens if the solder protrudes to the light emitting end face side. .

  Therefore, the corner of the light emitting surface of the semiconductor laser chip in the stem (heat sink) is chamfered or processed into a curved shape, and the semiconductor laser is passed through the conductive die bond paste from one end face of the stem or submount. An example of a method of manufacturing a semiconductor laser device in which a semiconductor laser chip is disposed so as to protrude an end face (light emitting end face) on the light emitting point side of the chip is described (for example, see Patent Document 1).

  In such a method of manufacturing a semiconductor laser device, since the conductive die bond paste is prevented from protruding to the light emitting end face side of the semiconductor laser chip, a short circuit is formed by the protruding conductive die bond paste, and the light emitting point is blocked. It is possible to prevent the peeling and to mount an optical component such as a microlens in the vicinity of the light emitting end face of the semiconductor laser chip.

JP 2001-223425 A

  However, in the method of manufacturing the semiconductor laser device as described above, the lower side of the light emitting end face that generates the most heat is separated from the heat sink in the semiconductor laser chip, and the space between the lower side of the light emitting end face of the semiconductor laser chip and the heat sink. In this state, the conductive die bond paste is thickly provided. And generally, the conductive die bond paste has a high thermal resistance, and even if a solder material is used instead of the conductive die bond paste, the heat resistance of the solder material is also high, so the heat exhaustion from the semiconductor laser chip is deteriorated, There is a problem that the performance of the semiconductor laser device deteriorates.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method for manufacturing a semiconductor laser device that is excellent in exhaust heat from a semiconductor laser chip and that does not leave a conductive adhesive layer protruding on the light emitting end face side of the semiconductor laser chip.

  In order to achieve the above object, a method of manufacturing a semiconductor laser device according to the present invention includes a conductive adhesive layer on a substrate so that the light emitting end surface of the semiconductor laser chip and one end surface of the substrate are substantially flush with each other. A method of manufacturing a semiconductor laser device in which a semiconductor laser chip is arranged, characterized by sequentially performing the following steps. First, in the first step, a step of fixing the semiconductor laser chip to the surface of the base via a conductive adhesive layer is performed. Next, in the second step, a step of removing the conductive adhesive layer protruding on the protruding portion together with a portion protruding from the light emitting end face of the semiconductor laser chip on the base is performed.

  According to such a method of manufacturing a semiconductor laser device, the conductive adhesive layer on the protruding portion is removed together with the portion protruding from the light emitting end face of the semiconductor laser chip on the base. As a result, the lower side of the light emitting end face of the semiconductor laser chip is maintained in a state in which it is not separated from the base body made of, for example, a heat sink, so that it is possible to manufacture a semiconductor device having excellent heat removal properties. In addition, since the conductive adhesive layer protruding from the light emitting end face side of the semiconductor laser chip does not remain, the formation of a short circuit due to the protruding conductive adhesive layer adhering to the light emitting end face, or the protruding conductive adhesive layer It is prevented that the light emitting point on the light emitting end face is blocked by the rising. Further, since the conductive adhesive layer that protrudes from the light emitting end face side of the semiconductor laser chip does not remain, an optical component such as a microlens can be disposed in the vicinity of the light emitting end face of the semiconductor laser chip.

  As described above, according to the method for manufacturing a semiconductor laser device of the present invention, it is possible to manufacture a semiconductor laser device excellent in exhaust heat performance, so that deterioration of the semiconductor laser chip is suppressed and a high-performance semiconductor laser device is suppressed. Can be obtained. In addition, the yield of the semiconductor laser device can be improved because formation of a short circuit by the protruding conductive adhesive layer and blocking of the light emitting point are prevented. Furthermore, since an optical component such as a microlens can be disposed in the vicinity of the light emitting end face of the semiconductor laser chip, the optical component suitable for the application can be mounted on the semiconductor laser device.

  DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments according to a method for manufacturing a semiconductor laser device of the present invention will be described below in detail with reference to the drawings.

(First embodiment)
1 to 2 are a perspective view and a cross-sectional view taken along line AA ′ for explaining a method of manufacturing a semiconductor laser device according to the present embodiment. First, as shown in FIG. 1 (a), for example, a rectangular parallelepiped Cu block having a width (x direction) of 25 mm, a depth (y direction) of 20 mm, and a height (z direction) of 5 mm is processed to form a main body 11a serving as a heat sink. Then, the base body 11 including the protruding portion 11b having a surface formed on the same surface as the surface of the main body 11a on one end surface side of the main body 11a is formed. In this case, for example, an end mill or the like is used to cut one end face side of the Cu block in the y direction, for example, with the surface side of the Cu block remaining. Thereby, the protrusion part 11b comprised integrally with the main body 11a is formed in the one end surface S side of the y direction of the main body 11a.

  Here, the width (x direction) of the protruding portion 11b only needs to be provided in a width within a range in which a conductive adhesive layer described later protrudes, and here, it is provided with the same width as the main body 11a. Further, the length of the protrusion 11b in the depth (y direction) is longer than the range where the conductive adhesive layer protrudes, and in the subsequent process, the protrusion 11b is gripped by hand or the like and removed from the main body 11a. It is preferable that it is about 5 mm or more that can be gripped. Here, it shall be 5 mm, for example.

  Furthermore, the thickness (z direction) of the protrusion part 11b should just be a thickness which can grip the protrusion part 11b and can remove from the main body 11a by a post process. However, it is preferable that the protrusion 11b is thinner than the main body 11a because it is easier to cut the base end of the protrusion 11b along the end surface S of the main body 11a in a later step. When the protruding portion 11b is formed in the shape as described above, the main body 11a serving as a heat sink has a rectangular parallelepiped shape with a width (x direction) of 25 mm, a depth (y direction) of 15 mm, and a height (z direction) of 5 mm.

  Next, a notch 11c is formed in a state in which a part of the surface side of the protruding portion 11b remains along the end surface S of the main body 11a at the base end of the protruding portion 11b, for example, by a dicing saw. This notch 11c is formed from the lower side of the protruding portion 11b toward the surface, leaving a thickness of, for example, about 50 μm on the surface side. Here, this remaining portion becomes a connecting portion 11d with the main body 11a in the protruding portion 11b. The thickness of the connecting portion 11d is preferably as thin as possible so that the protrusion 11b is removed from the main body 11a in a subsequent step and is not damaged in each step from the step of removing the protrusion 11b.

  In addition, although the example which forms the said cut 11c in the base end of the protrusion part 11b is demonstrated here, the cut 11c does not need to be formed. In this case, for example, the Cu block is cut so that the entire protruding portion 11b has the same thickness as the connecting portion 11d. However, it is preferable to form the notch 11c because it is easy to remove the protruding portion 11b with the connecting portion 11d as a base point when the protruding portion 11b is removed in a later step.

  Next, as shown in FIG. 1B, a conductive adhesive layer 12 made of, for example, a solder material is formed in a region of the surface of the base 11 on which the semiconductor laser chip is arranged in a later step. At this time, it is preferable to supply an excessive amount of this solder material in order to select a solder material with an emphasis on exhaust heat and to obtain wettability with the main body 11a serving as a heat sink. Here, a molded solder foil made of gold tin (AuSn) that melts at about 270 ° C. is placed in the region, and this solder foil is supplied excessively.

  Here, an example in which solder foil is supplied as the solder material constituting the conductive adhesive layer 12 will be described, but the supply form of the solder material is not particularly limited, and may be supplied by, for example, solder paste. . Here, a solder material is used as the conductive adhesive layer 12, but the constituent material of the conductive adhesive layer 12 is not limited to the solder material, and a conductive die bond paste can also be used. Examples of the conductive die bond paste include a silver paste in which a filler of silver (Ag) is mixed with a thermosetting epoxy resin, and a mixture of graphite powder in a thermosetting epoxy resin.

  Subsequently, the semiconductor laser chip 13 is disposed on the conductive adhesive layer 12. At this time, the semiconductor laser chip 13 is placed on the main body 11a through the conductive adhesive layer 12 so that the light emitting end face 13a having the light emitting point of the semiconductor laser chip 13 is along the end face S on the projecting portion 11b side of the main body 11a. Deploy. At this time, it is preferable to perform junction downmounting of the semiconductor laser chip 13 so that the PN junction branch point is close to the main body 11a, because heat exhaustion from the semiconductor laser chip 13 can be improved.

  Further, the semiconductor laser chip 13 used in the present invention is not particularly limited, but a multi-beam type semiconductor laser chip provided with a plurality of light emitting points for emitting independently controllable laser beams in one chip. If so, it is preferable because high heat exhaustion is required, and the effects of the present invention described later can be remarkably exhibited.

  Thereafter, as shown in FIG. 2C, heat of about 270 ° C. is applied to melt the conductive adhesive layer 12 made of a solder material. At this time, since the conductive adhesive layer 12 spreads on the base 11 around the semiconductor laser chip 13, not only on the main body 11a but also on the protruding portion 11b in a state of protruding from the light emitting end face 13a of the semiconductor laser chip 13. Also spread. Then, as the conductive adhesive layer 12 is solidified, the semiconductor laser chip 13 is fixed on the base 11 by thermal bonding.

  Next, as shown in FIG. 2 (d), the protruding portion 11b (see FIG. 2 (c)) is held by some jig or hand, and is pulled, for example, opposite to the main body 11a or shifted vertically. Then, with the connecting portion 11d (see FIG. 2C) as a base point, the conductive adhesive layer 12 protruding on the protruding portion 11b is removed together with the protruding portion 11b. Thus, the protruding portion 11b and the conductive adhesive layer 12 on the protruding portion 11b are removed without contaminating the light emitting end face 13a of the semiconductor laser chip 13.

  By performing the above steps, a semiconductor laser in which the semiconductor laser chip 13 is disposed on the main body 11a via the conductive adhesive layer 12 so that the light emitting end face 13a and the end face S of the main body 11a are substantially flush with each other. The device is completed.

  Here, the protruding portion 11b is grasped and removed, but any method can be used as long as the protruding portion 11b can be removed so as not to contaminate the light emitting end face 13a of the semiconductor laser chip 13. For example, the protruding portion 11b may be removed by burning out the connecting portion 11d with a laser or the like.

  According to such a method of manufacturing a semiconductor laser device, the conductive adhesive layer 12 protruding from the protruding portion 11b is removed together with the protruding portion 11b protruding from the light emitting end face 13a of the semiconductor laser chip 13, so that the semiconductor laser The lower side of the light emitting end face 13a of the chip 13 is maintained in a state where it is not separated from the heat sink (main body 11a). Therefore, since the semiconductor laser device excellent in the exhaust heat property of the semiconductor laser chip 13 can be manufactured, the deterioration of the semiconductor laser chip 13 is suppressed, and a high-performance semiconductor laser device can be obtained.

  Further, since the conductive adhesive layer 12 that protrudes to the light emitting end face 13a side of the semiconductor laser chip 13 does not remain, the protruding conductive adhesive layer 12 adheres to the light emitting end face 13a, thereby forming a short circuit or protruding. The rise of the conductive adhesive layer 12 prevents the light emitting point of the light emitting end face 13a from being blocked. Therefore, the yield of the semiconductor laser device can be improved.

  Furthermore, since the conductive adhesive layer 12 that protrudes to the light emitting end face 13a side of the semiconductor laser chip 13 does not remain, an optical component such as a microlens can be disposed in the vicinity of the light emitting end face 13a of the semiconductor laser chip. . Therefore, an optical component suitable for the application can be mounted on the laser device.

(Second Embodiment)
In the present embodiment, an example in which the base body is composed of a main body serving as a heat sink and an attachment body disposed on one end face side of the main body will be described with reference to the manufacturing process sectional view of FIG. In addition, the same number is attached | subjected and demonstrated to the structure similar to 1st Embodiment.

  First, as shown in FIG. 3A, for example, on one end surface S ′ side of a main body 21a made of Cu having the same shape as the main body 11a of the first embodiment (see FIG. 2D), A rectangular parallelepiped attachment body 21b having the same thickness is disposed so that the surface of the attachment body 21b is substantially flush with the surface of the main body 21a, and the main body 21a and the attachment body 21b are clamped from the lateral direction. Hold it. In this way, the base body 21 is configured in which the main body 21a and the attachment body 21b are closely contacted with each other in a pressed state. The main body 21a is assumed to be a heat sink.

  Here, the width (x direction) of the attached body 21b (see FIG. 1 (a)) is only required to be provided within a range in which a conductive adhesive layer to be described later protrudes. Here, the width is the same as that of the main body 11a. Will be provided. Moreover, the length of the attachment body 21b (y direction) should just be provided longer than the range which the electroconductive contact bonding layer mentioned later protrudes. In addition, the thickness in the z direction of the attachment body 21b is provided with a thickness that allows the body 21a and the attachment body 21b to be clamped from the side in a state where the attachment body 21b is disposed on the end surface S ′ side of the body 21a. It is preferable that the thickness of the attachment body 21b be set so that the surface of the attachment body 21b is substantially flush with the surface of the body 21a.

  Moreover, the material of this attachment 21b is not specifically limited. However, when the conductive adhesive layer supplied with surplus is melted, the surplus portion is selectively provided when the material is made of a material having better wettability with the conductive adhesive layer described later than the main body 21a. The conductive adhesive layer protruding from the body 21b side and protruding together with the attachment body 21b can be removed, which is preferable. Further, when the conductive adhesive layer is melted, even if the conductive adhesive layer enters between the main body 21a and the attachment body 21b by capillary action, the attachment body 21b is wetted with the conductive adhesive layer rather than the main body 21a. By using a material with good properties, the conductive adhesive layer that has entered between the main body 21a and the attachment body 21b can be removed together with the attachment body 21b. Here, since the conductive adhesive layer is made of AuSn as will be described later, wettability with AuSn is better than Cu forming the main body 21a, for example, the attachment body 21b is made of Au.

  Next, as shown in FIG. 3B, a region made of AuSn is formed as a conductive adhesive layer 12 on a region of the surface of the base 21 on which the semiconductor laser chip is disposed in a later step, as in the first embodiment. The solder foil is placed, and AuSn is supplied excessively.

  Subsequently, the semiconductor laser chip 13 is disposed on the conductive adhesive layer 12. At this time, the semiconductor laser chip 13 is disposed on the main body 21a via the conductive adhesive layer 12 so that the light emitting end face 13a of the semiconductor laser chip 13 and the end face S 'on the attachment body 21b side of the main body 21a are substantially flush with each other. 13 is arranged.

  Thereafter, as shown in FIG. 3C, heat at about 270 ° C. is applied to melt the conductive adhesive layer 12. At this time, since the conductive adhesive layer 12 spreads on the base body 21 around the semiconductor laser chip 13, not only on the main body 21a but also on the attachment body 21b in a state of protruding from the light emitting end face 13a of the semiconductor laser chip 13. Also spread. At this time, the conductive adhesive layer 12 may enter between the main body 21a and the attachment body 21b due to capillary action. And the semiconductor laser chip 13 is fixed on the base | substrate 21 by thermal joining because the electroconductive contact bonding layer 12 solidifies.

  Next, as shown in FIG. 3D, the clamped state (not shown) is released, and the attachment body 21b (see FIG. 3C) is detached from the main body 21a, so that the attachment body 21b is attached. The conductive adhesive layer 12 protruding on the body 21b is removed. At this time, even if the conductive adhesive layer 12 enters between the main body 21a and the attachment body 21b in the melting step of the conductive adhesive layer 12, the attachment body 21b is wetted with the conductive adhesive layer 12 rather than the main body 21a. The conductive adhesive layer 12 that has entered between the main body 21a and the attachment body 21b is removed together with the attachment body 21b because it is made of a material having good properties.

  As described above, the semiconductor laser device in which the semiconductor laser chip 13 is disposed on the main body 21a with the conductive adhesive layer 12 so that the light emitting end face 13a is substantially flush with the end face S ′ of the main body 21a. Complete.

  Even with such a method of manufacturing a semiconductor laser device, the attached body 21b protruding from the light emitting end face 13a and the conductive adhesive layer 22 on the attached body 21b are removed, so that the same effects as those of the first embodiment can be obtained. be able to.

(Modification 1)
In the second embodiment, as described with reference to FIG. 3A, the example using the base body 21 in a state where the main body 21a and the attachment body 21b are not joined has been described. ), The main body 21 a and the attachment body 21 b may be joined by the adhesive layer 22.

  In this case, the width (x direction) of the attachment 21b (see FIG. 1A) is the same width as that of the main body 21a, but the width of the conductive adhesive layer 12 protrudes. Just do it. Further, the length of the attached body 21b (y direction) is 5 mm or more that can be grasped with a jig or the like since the attached body 21b is grasped and removed by a jig or the like in a later step. Is preferred. Furthermore, it is preferable that the thickness (z direction) of the attachment body 21b is a thickness that can be fixed via the adhesive layer 22 and can be gripped by the jig or the like.

  Further, as described in the second embodiment, the attachment body 21b is preferably made of a material having better wettability with the conductive adhesive layer 12 than the main body 21a. Further, the attachment body 21b is made of a material having better wettability with the adhesive layer 22 than the main body 21a, so that the attachment layer 21b can be removed together with the attachment body 21b when the attachment body 21b is removed in a subsequent process. This is preferable because it is possible.

  Here, the adhesive layer 22 for joining the main body 21a and the attachment body 21b is higher than the curing temperature of the conductive die bond paste used as the conductive adhesive layer described later, and the degree to which the cured conductive die bond paste is not denatured. A solder material that melts at a temperature of 1 mm is used. Here, for example, a solder material made of indium silver (InAg) or silver tin (AgSn) that melts at about 150 ° C. is used.

  Next, as shown in FIG. 4B, a conductive adhesive layer 12 is formed on a region of the surface of the substrate 11 on which the semiconductor laser chip is arranged in a later step. Here, as the conductive adhesive layer 12, for example, a silver paste having a curing temperature of about 100 ° C. in which a filler of silver (Ag) is mixed with a thermosetting resin is used. Is formed by coating.

  Subsequently, the semiconductor laser chip 13 is disposed on the main body 21a via the conductive adhesive layer 12 so that the light emitting end face 13a of the semiconductor laser chip 13 and the end face S 'on the attachment body 21b side of the main body 21a are substantially flush with each other. 13 is arranged. At this time, the conductive adhesive layer 12 protrudes on the base 21 around the semiconductor laser chip 13 and protrudes from the light emitting end face 13a of the semiconductor laser chip 13 onto the attachment body 21b.

  Thereafter, the semiconductor laser chip 13 is fixed to the surface of the main body 21 a by applying a temperature higher than the curing temperature (about 100 ° C.) of the conductive adhesive layer 12 and lower than the melting temperature of the adhesive layer 22. At this time, the attachment body 21b is maintained in a state of being joined to the main body 21a.

  Next, as shown in FIG. 4C, the adhesive layer 22 made of a solder material is melted by applying a temperature of about 150 ° C., and the conductive adhesive layer 12 protruding on the attached body 21b is removed together with the attached body 21b. Thereby, since the conductive adhesive layer 12 made of the hardened silver paste is not denatured, the fixed state of the semiconductor laser chip 13 is maintained. Further, since the attachment body 21b is made of a material having better wettability with the adhesive layer 22 than the main body 21a, the adhesive layer 22 is removed together with the attachment body 21b. The adhesive layer 22 is preferably removed entirely, but may remain on the end surface S 'of the main body 21a as long as it does not affect the mounting of optical components such as microlenses.

  Even in such a method of manufacturing a semiconductor laser device, the attached body 21b protruding from the light emitting end face 13a and the conductive adhesive layer 12 protruding from the attached body 21b are removed. Similar effects can be achieved.

  In the first embodiment, the second embodiment, and the first modification described above, an example in which the main body 11a or the main body 21a is a heat sink has been described. However, the present invention is applicable even if the main bodies 11a and 21a are submounts. Is possible. Further, when manufacturing a semiconductor laser device in which a submount is disposed on a heat sink via a conductive adhesive layer, and a semiconductor laser chip is disposed on the submount via a conductive adhesive layer, Both may be processed from the substrate 11 or the substrate 21.

FIG. 6 is a manufacturing process diagram (perspective view and cross-sectional view) for explaining the first embodiment of the method for manufacturing a semiconductor laser device of the present invention (No. 1); FIG. 8 is a manufacturing process diagram (perspective view and cross-sectional view) for explaining the first embodiment of the method for manufacturing a semiconductor laser device of the present invention (No. 2); It is manufacturing process sectional drawing for demonstrating 2nd Embodiment which concerns on the manufacturing method of the semiconductor laser apparatus of this invention. It is manufacturing process sectional drawing for demonstrating the modification 1 of 2nd Embodiment which concerns on the manufacturing method of the semiconductor laser apparatus of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 11, 21 ... Base | substrate, 11a, 21a ... Main body, 11b ... Projection part, 12 ... Conductive adhesive layer, 13 ... Semiconductor laser chip, 13a ... Light emission end surface, 21b ... Additional body, S, S '... End surface

Claims (6)

A method of manufacturing a semiconductor laser device, wherein a semiconductor laser chip is disposed on a base via a conductive adhesive layer so that a light emitting end face of the semiconductor laser chip and one end face of the base are substantially flush with each other,
A first step of fixing the semiconductor laser chip to the surface of the substrate via the conductive adhesive layer;
And a second step of removing the conductive adhesive layer protruding above the protruding portion together with a portion protruding from the light emitting end face of the semiconductor laser chip in the base body. Method. The base body includes a main body and a protruding portion that is configured integrally with the main body on one end surface side of the main body and has a surface that is configured in the same plane as the surface of the main body.
In the first step, the semiconductor laser chip is fixed to the surface of the main body via the conductive adhesive layer so that the light emitting end surface is along the one end surface of the main body,
2. The method of manufacturing a semiconductor laser device according to claim 1, wherein, in the second step, the conductive adhesive layer protruding on the protruding portion is removed together with the protruding portion. 3. The semiconductor according to claim 2, wherein a notch is provided at a base end of the projecting portion in a state in which a part of the surface side of the projecting portion remains along the one end surface of the main body. A method for manufacturing a laser device. The base body includes a main body, and an attachment body arranged on one end surface side of the main body so that the surface is substantially flush with the surface of the main body,
In the first step, the semiconductor laser chip is fixed to the surface of the main body via the conductive adhesive layer so that the light emitting end surface is along the one end surface of the main body.
The method of manufacturing a semiconductor laser device according to claim 1, wherein, in the second step, the conductive adhesive layer protruding on the attachment body is removed together with the attachment body. The method of manufacturing a semiconductor laser device according to claim 4, wherein the main body and the attachment body are arranged in close contact with each other while being pressed against each other. The method of manufacturing a semiconductor laser device according to claim 4, wherein the main body and the attached body are bonded to each other.

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