JP2007116003A - Magnetoresistive element, magnetic head, and magnetic recording / reproducing apparatus using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element, a magnetic head, and a magnetic head capable of obtaining a high output by increasing a magnetoresistance change ΔR · A and a sense current per unit area while reducing Joule heat and promoting a high recording density. Another object of the present invention is to provide a magnetic recording / reproducing apparatus.
A nonmagnetic intermediate layer, a magnetization free layer, and a protective layer formed to have a length smaller than the length of the magnetization pinned layer in the track width direction are laminated on the magnetization pinned layer, and further on the magnetization pinned layer. In addition, an antiferromagnetic layer, an insulating layer, a hard magnetic layer, a magnetoresistive effect element, a magnetic head, and the like are used adjacent to both sides of the nonmagnetic intermediate layer in the track width direction with the nonmagnetic intermediate layer at the center. Provided is a magnetic recording / reproducing apparatus.
[Selection] Figure 3

Description

  The present invention relates to a magnetoresistive element, a magnetic head, and a structure of a magnetic recording / reproducing apparatus using the same.

  A magnetic disk device, a so-called hard disk device (hereinafter referred to as HDD), which is one of information recording / reproducing devices, has been mainly used in personal computers. However, recently, the range of use has expanded, and audio visual equipment (AV Devices) and in-vehicle devices such as car navigation systems. The storage capacity of HDDs has been increasingly demanded, and a perpendicular recording method has been proposed in order to achieve a high recording density.

  As the recording density of the HDD increases, a highly sensitive sensor is required for the reproducing head used for reproducing information. In response to this requirement, there are a tunnel type magnetoresistive effect element (hereinafter referred to as TMR) and a vertical conduction type giant magnetoresistive effect element (hereinafter referred to as CPP-GMR). These are elements of a type in which a sense current for detecting a magnetic field is supplied in a direction substantially perpendicular to the film surface of a TMR or GMR film having a thin film laminated structure.

  As a prior art document disclosing a magnetic head using a TMR element, for example, US Pat. No. 5,898,548 can be cited. Further, as prior art documents disclosing a magnetic head using a CPP-GMR element, for example, JP-A-10-55512 and US Pat. No. 5,668,688 can be cited.

  In order to improve the recording density of HDDs, a narrow gap and a narrow track are necessary. In particular, in order to achieve the former, when applying a vertically energizing magnetoresistive element to a shield type magnetic head, the magnetoresistive element It is necessary to share an electrode and a magnetic shield for passing a sense current. The above prior art documents all disclose that a magnetic shield is used to pass a sense current.

Also, a prior art document discloses a CPP type magnetoresistive head that attempts to increase the output by firmly fixing the magnetization of the pinned magnetic layer while reducing Joule heat.
US Pat. No. 5,898,548 JP-A-10-55512 US Pat. No. 5,668,688 JP-A-2005-44489

  However, in the above-described prior art, a portion other than the magnetoresistive effect element is formed of an insulating film (dielectric film) between the paired upper and lower magnetic shields, and this portion forms a capacitor. When electric charges are induced in this capacitor part due to an Electro Static Discharge phenomenon or disturbance noise (for example, crosstalk noise), an excessive current flows in the magnetoresistive effect element, and the magnetoresistive effect element is destroyed. May occur.

Further, the antiferromagnetic film is formed only on the back side in the stacking direction, and there is a problem that the pinned layer magnetization, which is the magnetization fixed layer, easily fluctuates due to the medium magnetic field from the magnetic disk.
Accordingly, an object of the present invention is to solve the above-mentioned problems, and while promoting Joule heat and promoting high recording density by narrowing the reproducing shield interval, the amount of change in magnetoresistance per unit area is further promoted. An object of the present invention is to provide a magnetoresistive element, a magnetic head, and a magnetic recording / reproducing apparatus using the magnetoresistive effect element which can obtain high output by increasing ΔR · A and sense current.

  In order to achieve the above object, a magnetoresistive effect element according to the present invention includes an underlayer, and a magnetization pinned layer formed on the underlayer with a length substantially equal to the length in the track width direction of the underlayer, On the magnetization pinned layer, a nonmagnetic intermediate layer formed to have a length smaller than the length of the magnetization pinned layer in the track width direction, and on the nonmagnetic intermediate layer, the nonmagnetic intermediate layer in the track width direction. A magnetization free layer having a length substantially equal to the length; a protection layer formed on the magnetization free layer having a length substantially equal to a length in the track width direction of the magnetization free layer; and the magnetization fixed layer. An antiferromagnetic layer formed adjacent to both sides of the nonmagnetic intermediate layer in the track width direction with the nonmagnetic intermediate layer in the center, and the magnetization free layer and the protective layer on the antiferromagnetic layer. An insulating layer formed adjacent to the insulating layer, and the magnetic layer on the insulating layer. The protective layer and free layer in the middle, is characterized in that it has a said magnetization free layer and the hard magnetic layer formed on both sides of the track width direction of the protective layer.

  The magnetic head according to the present invention includes a substrate, a lower electrode / magnetic shield layer formed on the substrate, and a magnetoresistive effect element formed on the shield layer, the lower electrode / magnetic shield. An underlayer formed on the layer; a magnetization pinned layer formed on the underlayer with a length substantially equal to a length in the track width direction of the underlayer; and the magnetization pinned layer on the magnetization pinned layer A non-magnetic intermediate layer formed to have a length smaller than the length in the track width direction, and a magnetization formed on the non-magnetic intermediate layer to a length substantially equal to the length in the track width direction of the non-magnetic intermediate layer. A free layer, a protective layer formed on the magnetization free layer, and a protective layer formed to have a length substantially equal to the length of the magnetization free layer in the track width direction; and on the magnetization fixed layer, the nonmagnetic intermediate layer in the center. On both sides of the non-magnetic intermediate layer in the track width direction An antiferromagnetic layer formed in contact therewith, an insulating layer formed adjacent to the magnetization free layer and the protective layer on the antiferromagnetic layer, and the magnetization free layer and the A magnetoresistive effect element having a protective layer in the center and a hard magnetic layer formed on both sides of the protective layer in the track width direction of the protective layer, and an upper electrode and magnetism formed on the magnetoresistive effect element And a shield layer.

  Furthermore, in the magnetic recording / reproducing apparatus according to the present invention, a current is passed through the lower magnetic pole / magnetic shield layer and the upper electrode / magnetic shield layer in a direction substantially perpendicular to the film surface of the magnetoresistive element. The apparatus is characterized in that a perpendicular energization type magnetic head for energizing current is provided, and information magnetically recorded on the magnetic recording medium can be reproduced.

  According to the present invention, while reducing Joule heat, a high recording density is promoted by narrowing a reproducing shield interval, and a high output is obtained by increasing the magnetoresistance change ΔR · A and the sense current per unit area. It is possible to provide a magnetoresistive effect element, a magnetic head, and a magnetic recording / reproducing apparatus using the same.

Hereinafter, embodiments of the present invention applied to a magnetic disk device as a disk device will be described in detail with reference to the drawings.
FIG. 1 is a principal perspective view illustrating a schematic configuration of the magnetic recording / reproducing apparatus according to the embodiment. That is, the magnetic recording / reproducing apparatus 1 according to the present embodiment is an apparatus using a rotary actuator. In FIG. 1, a recording medium disk 2 is mounted on a spindle 3 that rotates the recording medium disk 2 and is rotated in the direction of arrow A by a motor (not shown) that responds to a control signal from a drive device control unit (not shown). The magnetic recording / reproducing apparatus 1 according to the present embodiment may include a plurality of medium disks 2.

  A head slider 4 for recording and reproducing information stored in the medium disk 2 is attached to the tip of a thin film suspension 5. Here, the head slider 4 mounts magnetic heads of a plurality of embodiments to be described later in the vicinity of the tip thereof.

  When the medium disk 2 rotates, the medium facing surface (ABS) of the head slider 4 is held with a predetermined flying height from the surface of the medium disk 2. Alternatively, a so-called “contact traveling type” in which the head slider 4 is in contact with the medium disk 2 may be used.

  The suspension 5 is connected to one end of an actuator arm 6 having a bobbin portion for holding a drive coil (not shown). A voice coil motor 7 which is a kind of linear motor is provided at the other end of the actuator arm 6. The voice coil motor 7 is composed of a drive coil (not shown) wound around the bobbin portion of the actuator arm 6 and a magnetic circuit composed of a permanent magnet and a counter yoke arranged so as to sandwich the coil.

  The actuator arm 6 is held by ball bearings (not shown) provided at two locations above and below the spindle 8 and can be freely slid and rotated by a voice coil motor 7.

  FIG. 2 is an enlarged perspective view of the magnetic head assembly 9 ahead of the actuator arm 6 as viewed from the medium disk 2 side. That is, the magnetic head assembly 9 has an actuator arm 6 having a bobbin portion for holding a drive coil, for example, and a suspension 5 is connected to one end of the actuator arm 6.

  A head slider 4 having a magnetic head according to any of the embodiments described later is attached to the tip of the suspension 5. The suspension 5 has a lead wire 10 for writing and reading signals, and the lead wire 10 and each electrode of the magnetic head incorporated in the head slider 4 are electrically connected. In the figure, reference numeral 11 denotes an electrode pad of the magnetic head assembly 9.

Next, the detailed structure of the perpendicular energization type magnetic head according to the present embodiment will be described with reference to the drawings.
(First embodiment)
First, the magnetic head according to the first embodiment of the present invention will be described with reference to FIG.
FIG. 3 is a cross-sectional view conceptually showing the main configuration of the magnetic head including the vertical conduction magnetoresistive element 100 according to the first embodiment of the present invention. In this figure, the front side is a facing surface (medium facing surface) that faces a recording medium (not shown).

  In FIG. 3, a lower electrode / magnetic shield layer 15, a magnetoresistive film 12, and an upper electrode / magnetic shield layer 14 are sequentially formed on a substrate (not shown). Here, the magnetoresistive effect element 100 is formed of a ground layer 12a, a pinned magnetization layer 12b, a nonmagnetic intermediate layer 12c, a free magnetization layer 12d, and a protective (Cap) layer 12e. ing.

  In addition, adjacent to each other in the track width direction of the magnetoresistive effect element 12 are an underlayer 12a and a magnetization fixed layer 12b shared with the magnetoresistive effect element 12, antiferromagnetic (AF) layers 12f and 12f2, and an insulating layer 12g1. , 12g2, and hard magnetic layers 12h1, 12h2.

Insulating layers 12g1 and 12g2 are formed between the hard magnetic layers 12h1 and 12h2 and the magnetoresistive film 12.
In FIG. 3, a magnetic body mainly composed of Ni, Fe, and Co can be mainly used for the magnetization fixed layer 12b and the magnetization free layer 12d. Further, Cu can be mainly used for the nonmagnetic intermediate layer 12c, and IrMn or the like can be mainly used for the antiferromagnetic layer 12f.

  NiFeCr, Ta, Ru, or a laminated film thereof can be used for the underlayer 12a. Further, Ta, Ru, Cu or the like can be used for the protective layer 12e. Further, CoPt or CoPtCr can be used for the hard magnetic layer 12h, and AlOx or SiOx can be used for the insulating layer 12g.

  By applying a current between the lower electrode / magnetic shield layer 15 and the upper electrode / magnetic shield layer 14 to the magnetoresistive effect element 100 having the above configuration, a current flows in a direction perpendicular to the film surface of the magnetoresistive effect element, A vertically energized magnetoresistive element is obtained.

  At that time, since no current flows through the antiferromagnetic layer 12f, the resistance is lower than that of the conventional magnetoresistive effect element in which the antiferromagnetic layer 12f is laminated, and the portion showing the resistance change by the magnetic field is magnetized. The MR ratio: dR / R is improved because there is no resistance component of the antiferromagnetic layer 12f which is the portion of the pinned layer 12b / nonmagnetic intermediate layer 12c / magnetization free layer 12d and is the additional resistance portion.

Accordingly, thermal noise is reduced, and in addition, the reproduction output is improved, so that the S / N ratio is improved.
Furthermore, since the thickness of the antiferromagnetic layer 12f is about 5 to 20 nm, the lead gap length, which is the distance between the upper and lower shields 14 and 15, which is 50 nm or less, is reduced by the thickness of the antiferromagnetic layer. Therefore, it is possible to form a magnetic head having a narrow gap length.

  Actually, when the underlayer 12a is 7 nm, the antiferromagnetic layer 12f is 15 nm, the magnetization pinned layer 12b is 5 nm, the nonmagnetic intermediate layer 12c is 5 nm, the magnetization free layer 12d is 5 nm, and the protective layer 12e is 7 nm, the conventional magnetoresistance The effect element is 44 nm, and the magnetoresistive effect element of the present invention is 29 nm. Since the film thickness can be reduced by 30% or more, the read gap length can be reduced by 30% or more, and a read gap length of 30 nm or less is also possible.

  In addition, the film thickness, resistance, and MR ratio of the magnetoresistive effect element of the present invention and the conventional magnetoresistive effect element using the same film material were actually created with the element size of 70 × 70 nm. It was as 1.

(Second Embodiment)
Next, a magnetic head according to a second embodiment of the present invention will be described with reference to FIGS.
FIG. 4 is a cross-sectional view conceptually showing the main configuration of a magnetic head provided with a vertical energization magnetoresistive element 200 according to the second embodiment of the present invention. In this figure, the front side is a facing surface (medium facing surface) that faces a recording medium (not shown).

  In FIG. 4, a lower electrode / magnetic shield layer 25, a magnetoresistive film 22, and an upper electrode / magnetic shield layer 24 are sequentially formed on a substrate (not shown). Here, the magnetoresistive effect element includes an underlayer (Seed) layer 22a, a first magnetization pinned (Pin1) layer 22b, a nonmagnetic metal (NM) layer 22i, a second magnetization pinned (Pin2) layer 22j, a nonmagnetic intermediate ( A spacer layer 22c, a magnetization free (Free) layer 22d, and a protective (Cap) layer 22e are formed.

  Further, adjacent to each other in the track width direction of the magnetoresistive effect element 200, an underlayer 22a and a first magnetization pinned layer 22b shared with the magnetoresistive effect element 200, and antiferromagnetic (AF) layers 22f1, 22f2, Insulating layers 22g1 and 22g2 and hard magnetic layers 22h1 and 22h2 are formed.

Insulating layers 22g1 and 22g2 are formed between the hard magnetic layers 22h1 and 22h2 and the magnetoresistive film 22.
FIG. 5 is a plan view of the magnetoresistive effect element 200 according to this embodiment as seen from the top surface of the substrate. Here, the lower electrode / magnetic shield layer 25 and the upper electrode / magnetic shield layer 24 are not shown, and the lower side of the drawing is the medium facing surface.

  The layered portion of the underlayer 22a, the first magnetization pinned layer 22b, and the antiferromagnetic layer 22f (insulating layer 22g) is formed long in the height direction. This is because the milling rate difference is used in the ion milling process when forming in the height direction, and milling is terminated at the insulating layer portion of the base layer 22a / first magnetization pinned layer 22b / antiferromagnetic layer 22f / (insulating layer 22g). Formed.

  FIG. 6 is a plan view of a magnetoresistive effect element 200 according to a modification of the present embodiment as seen from the top surface of the substrate. Here, the lower electrode / magnetic shield layer 25 and the upper electrode / magnetic shield layer 24 are not shown, and the lower side of the drawing is the medium facing surface.

  The layered portion of the underlayer 22a, the first magnetization pinned layer 22b, and the antiferromagnetic layer 22f (insulating layer 22g) is formed long in the height direction. This is formed by forming an antiferromagnetic layer 22f on the first magnetization pinned layer 22b exposed again after etching to the nonmagnetic metal layer 22i by ion milling when forming in the height direction.

In FIG. 4, the first magnetization pinned layer 22b, the second magnetization pinned layer 22j, and the magnetization free layer 22d can be mainly made of a magnetic material mainly composed of Ni, Fe, and Co.
For the nonmagnetic metal layer 22i, Ru can be used, and for the nonmagnetic intermediate layer 22c, for example, a film obtained by oxidizing a Cu / Al / Cu laminated film can be used.
IrMn or the like can be mainly used for the antiferromagnetic layer 22f.
NiFeCr, Ta, Ru, or a laminated film thereof can be used for the underlayer 22a.
Ta, Ru, Cu, or the like can be used for the protective layer 22e.
CoPt or CoPtCr can be used for the hard magnetic layer 22h, and AlOx or SiOx can be used for the insulating layer 22g.
By applying a current between the lower electrode / magnetic shield layer 25 and the upper electrode / magnetic shield layer 24 to the magnetoresistive effect element 200 having the above configuration, a current is generated in the direction perpendicular to the film surface of the magnetoresistive effect element 200. It becomes a flow, vertical conduction type magnetoresistive effect element.

  At that time, since no current flows through the antiferromagnetic layer 22f, the resistance is lower than that of the conventional magnetoresistive effect element in which the antiferromagnetic layer 22f is laminated, and the portion showing the resistance change by the magnetic field is magnetized. Since there is no resistance component of the antiferromagnetic layer 22f, which is the portion of the pinned layer 22b / nonmagnetic metal layer 22i / nonmagnetic intermediate layer 22c / magnetization free layer 22d, and the additional resistance portion, the MR ratio: dR / R is improves.

Accordingly, thermal noise is reduced, and in addition, the reproduction output is improved, so that the S / N ratio is improved.
Furthermore, since the thickness of the antiferromagnetic layer 22f is about 5 to 20 nm, the lead gap length, which is the distance between the upper and lower shields 24 and 25, which is 50 nm or less, is reduced by the thickness of the antiferromagnetic layer 22f. Thus, a magnetic head with a narrow gap length can be formed.

  Actually, the underlying layer 22a: 7 nm, the antiferromagnetic layer 22f: 7 nm, the first magnetization pinned layer 22b: 3 nm, the nonmagnetic metal layer 22i: 1 nm, the second magnetization pinned layer 22j: 3 nm, and the nonmagnetic intermediate layer 22c: When 2 nm, the magnetization free layer 22d: 4 nm, and the protective layer 22e: 7 nm, the conventional magnetoresistive element is 34 nm, and the magnetoresistive element 200 of the present embodiment is 27 nm, and the film thickness can be reduced by 20% or more. The lead gap length can also be reduced by 20% or more, and a lead gap length of 30 nm or less is also possible.

  In addition, the film thickness, resistance, and MR ratio of the magnetoresistive effect element of the present invention and the conventional magnetoresistive effect element using the same film material were actually created with the element size of 70 × 70 nm. It was as 2.

  Further, as shown in FIG. 5 or FIG. 6, since the area of the laminated portion of the first magnetization pinned layer 22b and the antiferromagnetic layer 22f is large, good magnetization pinning can be performed. In addition, since the laminated portion of the first magnetization pinned layer 22b and the antiferromagnetic layer 22f is formed in a wide area up to the medium facing surface side, the magnetization of the magnetization pinned layer 22b hardly occurs due to the medium magnetic field, and the magnetization pinned Is stable.

Next, a method for creating the magnetoresistive effect element 200 in the present embodiment will be described with reference to FIGS.
As shown in FIG. 7A, after a lower electrode / magnetic shield layer 25 is formed on a substrate (not shown), a base layer 22a to be a magnetoresistive element 22, a first magnetization pinned layer 22b, a nonmagnetic metal layer 22i, a second magnetization pinned layer 22j, a nonmagnetic intermediate layer 22c, a magnetization free layer 22d, and a protective layer 22e are formed.

  A resist 23 is formed on the magnetoresistive effect film 22 by a lithography process, and the magnetoresistive effect film 22 is etched by ion milling. At that time, the layers up to the nonmagnetic metal layer 22i are etched so that the base layer 22a and the first magnetization pinned layer 22b remain (see FIG. 7B).

  Next, with the resist 23 left, an antiferromagnetic layer 22f, an insulating layer 22g, and a hard magnetic layer 22h are formed. At that time, the antiferromagnetic layer 22f is formed by a film formation method with less wraparound, and the insulating layer 22g is formed under a condition with relatively large wraparound. By doing so, these films are formed in a shape as shown in FIG. 8A, that is, the insulating layer 22g enters the gap between the hard magnetic layer 22h, the magnetization free layer 22d, and the protective layer 22e. .

Then, the antiferromagnetic layer 22f3, the insulating layer 22g3, and the hard magnetic layer 22h3 on the resist 23 are removed together with the resist 23 by lift-off.
Thereafter, patterning in the height direction is performed by any of the methods described in the second embodiment, and the upper electrode / magnetic shield layer 24 is formed (see FIG. 8B). The effect element 200 is created.

  The above-described production method is the same as the conventional method for forming the longitudinal bias layer (hard magnetic layer) of the magnetoresistive effect element, and the film to be formed / lifted off is different. Therefore, the magnetoresistive effect element of the present invention does not require a special forming method and can be easily produced because the conventional forming method of the magnetoresistive effect element can be used as it is.

  As described above in detail, according to the present invention, since there is no antiferromagnetic layer in the film thickness direction, it is possible to make the magnetoresistive film thin and to cope with a narrow gap. In particular, in the case of a CPP type magnetic head, if the gap length is the same, the magnetic layer thickness can be increased and the MR ratio can be improved.

  In addition, since the antiferromagnetic layer having a relatively large resistance is not energized, the series resistance component is reduced (because R of the denominator is reduced), the substantial MR change rate: dR / R is increased, and the element resistance is also reduced. Therefore, thermal noise is reduced and the S / N ratio can be improved.

  Furthermore, the area of the laminated portion of the magnetization pinned layer and the antiferromagnetic layer can be widened to the medium facing surface side, the magnetization pinning is stabilized, and the formation method is the same as the abutted structure similar to a normal bias film. It is easy to create because it is the same.

  That is, according to the present invention, while reducing Joule heat, a high recording density is promoted by narrowing the reproducing shield interval, and the magnetoresistive change ΔR · A per unit area and the sense current are increased to achieve a high output. It is possible to provide a magnetoresistive effect element, a magnetic head, and a magnetic recording / reproducing apparatus using the same.

1 is a perspective view of a main part illustrating a schematic configuration of a magnetic recording / reproducing apparatus according to an embodiment. FIG. 3 is an enlarged perspective view of the magnetic head assembly according to the present embodiment as viewed from the medium disk side. 1 is a cross-sectional view conceptually showing a main part configuration of a magnetic head including a vertical conduction type magnetoresistive element according to a first embodiment of the invention. Sectional drawing which represents notionally the principal part structure of the magnetic head provided with the perpendicular conduction type magnetoresistive effect element based on the 2nd Embodiment of this invention. The top view of the magnetic head which concerns on the 2nd Embodiment of this invention. The top view (to an antiferromagnetic layer part) of the magnetic head which concerns on the 2nd Embodiment of this invention. Sectional drawing explaining the manufacturing method of the perpendicular conduction type magnetoresistive effect element which concerns on the 2nd Embodiment of this invention (first half process). Sectional drawing explaining the manufacturing method of the perpendicular conduction type magnetoresistive effect element concerning the 2nd Embodiment of this invention (latter half process).

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Magnetic recording / reproducing apparatus 2 ... Media disk 3 ... Spindle 4 ... Head slider 5 ... Suspension 6 ... Actuator arm 7 ... Voice coil motor 8 ... Spindle 9 ... Magnetic head assembly 10 ... Lead wire 11 ... Electrode pad 12, 22 ... Magnetic Resistance effect film 12a, 22a ... Underlayer 12b, 22b ... Magnetization pinned layer (first pinned layer)
12c, 22c: nonmagnetic intermediate layer 12d, 11d: magnetization free layer (free layer)
12e, 22e ... protective layer 12f, 22f ... antiferromagnetic layer 12g, 22g ... insulating layer 12h, 22h ... hard magnetic layer 22i ... nonmagnetic metal layer 22j ... second magnetization pinned layer 23 ... resist 14, 24 ... upper electrode Magnetic shield layer 15, 25 ... Lower electrode and magnetic shield layer

Claims (5)

An underlayer,
A magnetization pinned layer formed on the underlayer with a length substantially equal to the length of the underlayer in the track width direction,
On the magnetization pinned layer, a nonmagnetic intermediate layer formed to have a length smaller than the length of the magnetization pinned layer in the track width direction;
On the nonmagnetic intermediate layer, a magnetization free layer formed to have a length substantially equal to the length in the track width direction of the nonmagnetic intermediate layer,
A protective layer formed on the magnetization free layer with a length substantially equal to the length of the magnetization free layer in the track width direction;
On the magnetization pinned layer, an antiferromagnetic layer formed adjacent to both sides in the track width direction of the nonmagnetic intermediate layer with the nonmagnetic intermediate layer in the center;
An insulating layer formed on the antiferromagnetic layer and adjacent to the magnetization free layer and the protective layer;
A magnetoresistive effect element comprising: a hard magnetic layer formed on both sides of the magnetization free layer and the protective layer in a track width direction with the magnetization free layer and the protective layer at the center on the insulating layer. An underlayer,
A first magnetization pinned layer formed on the underlayer with a length substantially equal to the length of the underlayer in the track width direction;
A nonmagnetic metal layer formed on the first magnetization pinned layer to have a length smaller than the length of the first magnetization pinned layer in the track width direction;
A second magnetization pinned layer formed on the nonmagnetic metal layer and having a length substantially equal to the length of the nonmagnetic metal layer in the track width direction;
A nonmagnetic intermediate layer formed on the second magnetization pinned layer to have a length substantially equal to the length of the second magnetization pinned layer in the track width direction;
On the nonmagnetic intermediate layer, a magnetization free layer formed to have a length substantially equal to the length in the track width direction of the nonmagnetic intermediate layer,
A protective layer formed on the magnetization free layer with a length substantially equal to the length of the magnetization free layer in the track width direction;
On the first pinned magnetic layer, the nonmagnetic metal layer and the second pinned magnetic layer are formed adjacent to both sides of the nonmagnetic metal layer and the second pinned magnetic layer in the track width direction. An antiferromagnetic layer formed,
An insulating layer formed on the antiferromagnetic layer and adjacent to the magnetization free layer and the protective layer;
A magnetoresistive effect element comprising: a hard magnetic layer formed on both sides of the magnetization free layer and the protective layer in a track width direction with the magnetization free layer and the protective layer at the center on the insulating layer. A substrate,
A lower electrode and magnetic shield layer formed on the substrate;
A magnetoresistive effect element formed on the shield layer,
An underlayer formed on the lower electrode and magnetic shield layer;
A magnetization pinned layer formed on the underlayer with a length substantially equal to the length of the underlayer in the track width direction,
On the magnetization pinned layer, a nonmagnetic intermediate layer formed to have a length smaller than the length of the magnetization pinned layer in the track width direction;
On the nonmagnetic intermediate layer, a magnetization free layer formed to have a length substantially equal to the length in the track width direction of the nonmagnetic intermediate layer,
A protective layer formed on the magnetization free layer with a length substantially equal to the length of the magnetization free layer in the track width direction;
On the magnetization pinned layer, an antiferromagnetic layer formed adjacent to both sides in the track width direction of the nonmagnetic intermediate layer with the nonmagnetic intermediate layer in the center;
An insulating layer formed on the antiferromagnetic layer and adjacent to the magnetization free layer and the protective layer;
On the insulating layer, the magnetoresistive element having a hard magnetic layer formed on both sides of the magnetization free layer and the protective layer in the track width direction with the magnetization free layer and the protective layer in the center;
A magnetic head having an upper electrode / magnetic shield layer formed on the magnetoresistive element. A substrate,
A lower electrode and magnetic shield layer formed on the substrate;
A magnetoresistive effect element formed on the shield layer,
An underlayer formed on the lower electrode and magnetic shield layer;
A first magnetization pinned layer formed on the underlayer with a length substantially equal to the length of the underlayer in the track width direction;
A nonmagnetic metal layer formed on the first magnetization pinned layer to have a length smaller than the length of the first magnetization pinned layer in the track width direction;
A second magnetization pinned layer formed on the nonmagnetic metal layer and having a length substantially equal to the length of the nonmagnetic metal layer in the track width direction;
A nonmagnetic intermediate layer formed on the second magnetization pinned layer to have a length substantially equal to the length of the second magnetization pinned layer in the track width direction;
On the nonmagnetic intermediate layer, a magnetization free layer formed to have a length substantially equal to the length in the track width direction of the nonmagnetic intermediate layer,
A protective layer formed on the magnetization free layer with a length substantially equal to the length of the magnetization free layer in the track width direction;
On the first pinned magnetic layer, the nonmagnetic metal layer and the second pinned magnetic layer are formed adjacent to both sides of the nonmagnetic metal layer and the second pinned magnetic layer in the track width direction. An antiferromagnetic layer formed,
An insulating layer formed on the antiferromagnetic layer and adjacent to the magnetization free layer and the protective layer;
On the insulating layer, the magnetoresistive element having a hard magnetic layer formed on both sides of the magnetization free layer and the protective layer in the track width direction with the magnetization free layer and the protective layer in the center;
A magnetic head having an upper electrode / magnetic shield layer formed on the magnetoresistive element. 5. The magnetic head according to claim 3, wherein a current is passed through the lower magnetic pole / magnetic shield layer and the upper electrode / magnetic shield layer to the film surface of the magnetoresistive element. A magnetic recording / reproducing apparatus comprising: a perpendicular energization type magnetic head that energizes current in a substantially vertical direction, and is capable of reproducing information magnetically recorded on the magnetic recording medium.

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