JP2007107085A - Integrated chemical system and integrated light energy conversion system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To achieve the size reduction, cost reduction, and performance enhancement of a photochemical system, an electrochemical system, a light energy conversion system on the like. <P>SOLUTION: The integrated chemical system and the integrated light energy conversion system each comprises a semiconductor thin film with exposed surfaces, a light collecting lens, an optical waveguide, a micropassage, etc. These can be regarded as integrated circuits composed of an assembly of united light, electricity, chemical, liquid, gas, and solid. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

Detailed Description of the Invention

    The present invention relates to an integrated chemical system (ICS), a thin film hydrogen / oxygen gas generator (TF-HOG) and an integrated energy conversion system (ILECS) to which the integrated chemical system (ICS) is applied. And / or ICS in contact with or in close proximity to gas and / or ion-conducting solids, ICS in which liquid and / or gas flow paths are formed, different types of liquids in the gap and other gaps and / or Or an ICS in which a gas and / or ion conductive solid is inserted, an ICS in which a flow path connecting gap portions is formed, an ICS produced by peeling a thin film formed on a growth substrate, and a gap portion After forming a thin film stack structure in which the removable material is patterned in the area to be removed, the removable material is removed. ICS to be manufactured, TF-HOG in which both front and back surfaces of the semiconductor thin film are in contact with or close to the electrolyte, TF-HOG that guides the irradiating light to the TF-HOG by the condensing lens, and the irradiation light by the optical circuit including the optical waveguide At least one part of ILECS that guides the light energy conversion device, ILECS that includes a wavelength filter in the optical circuit, ILECS that includes a three-dimensional optical circuit in which optical waveguides are stacked, a condensing lens, and an optical waveguide The present invention relates to an ILECS produced by an imprint method and / or a Bilt-in Mask method, and an ILECS in which microchannels for passing an electrolyte and a gas are integrated.

  Devices that include photochemical / electrochemical processes, such as solar cells and other photoenergy conversion devices and storage batteries, usually use a reaction vessel, so there is a problem that it is difficult to reduce the size, integration, efficiency, and functionality.

  As a clean light energy conversion method, there is HOG using an oxide semiconductor. As a promising method, a type in which two kinds of semiconductor particles are dispersed in an electrolyte and energy transfer between the particles is used is known (for example, see Non-Patent Document 1). However, since it is a dispersion system, it is difficult to control the positional relationship between the particles and the energy transfer efficiency cannot be optimized, so that there is a problem that the light energy conversion efficiency is low (1% or less).

  There is a solar cell (Solar Cell (SC)) as another clean light energy conversion method. As the SC, a panel type solar cell in which semiconductor panels are laid and a concentrating type solar cell using a large-scale lens or mirror are mainly used. However, the former has a problem that the cost increases because a large amount of expensive Si is used. In the latter, since a bulk optical system is used, there is a problem that the cost increases and the size increases.

  “Dream Artificial Synthesis” Newton “Next Generation Technology” Newton Press.

Problems to be solved by the invention

  One object of the present invention is to realize miniaturization and integration of devices including chemical processes such as photochemistry and electrochemistry, and to increase efficiency and functionality associated therewith. Another object of the present invention is to improve the light energy conversion efficiency of SC and HOG. Another object of the present invention is to reduce the consumption of semiconductor material and to reduce the cost of SC and HOG. Another object of the present invention is to reduce the size of the condensing optical system. Another object of the present invention is to reduce the cost of an SC or HOG condensing optical system. Another object of the present invention is to facilitate the collection of gas generated by HOG.

Means for solving the problem

  In the ICS according to the first aspect of the present invention, both the front and back surfaces of the thin film have exposed portions, and the exposed portions are in contact with or spaced from the liquid and / or gas and / or ion conductive solid. And a structure close to each other. This makes it possible to achieve downsizing and integration of devices including chemical processes such as photochemistry and electrochemistry, as well as higher efficiency and higher functionality.

  In another ICS according to the first aspect of the present invention, a plurality of thin films are adjacent to each other with a gap, and two or more surfaces of the thin film have an exposed portion, and the exposed portion is a liquid and / or gas. And / or a structure in contact with or in close proximity to the ion-conductive solid. This makes it possible to achieve downsizing and integration of devices including chemical processes such as photochemistry and electrochemistry, as well as higher efficiency and higher functionality.

  Another ICS according to the first aspect of the present invention includes a gap between the thin film and / or a gap between the thin film and the substrate and / or a gap between the thin film and the cover layer. A liquid and / or gas flow path is formed. This makes it possible to achieve downsizing and integration of devices including chemical processes such as photochemistry and electrochemistry, as well as higher efficiency and higher functionality.

  Another ICS according to the first aspect of the present invention is characterized in that the flow path is patterned. This makes it possible to achieve downsizing and integration of devices including chemical processes such as photochemistry and electrochemistry, as well as higher efficiency and higher functionality.

  In another ICS according to the first aspect of the present invention, at least one of the gap portions is a liquid and / or gas of a type different from the liquid and / or gas and / or ion conductive solid contained in the other gap portion. And / or an ion conductive solid. This makes it possible to achieve downsizing and integration of devices including chemical processes such as photochemistry and electrochemistry, as well as higher efficiency and higher functionality.

  Another ICS according to the first aspect of the present invention is characterized in that a flow path connecting gap portions is formed. This makes it possible to achieve downsizing and integration of devices including chemical processes such as photochemistry and electrochemistry, as well as higher efficiency and higher functionality.

  Another ICS according to the first aspect of the present invention is characterized in that the thin film is produced by peeling the thin film formed on the growth substrate from the substrate. This makes it possible to achieve downsizing and integration of devices including chemical processes such as photochemistry and electrochemistry, as well as higher efficiency and higher functionality.

  Another ICS according to the first aspect of the present invention includes a gap between the thin film and / or a gap between the thin film and the substrate and / or a gap between the thin film and the cover layer. A gap portion is formed by forming a laminated structure in which a removable material is patterned and arranged in a corresponding portion and then removing the removable material. This makes it possible to achieve downsizing and integration of devices including chemical processes such as photochemistry and electrochemistry, as well as higher efficiency and higher functionality.

  In the TF-HOG according to the second aspect of the present invention, the p-type semiconductor surface and the n-type semiconductor surface of a semiconductor core made of a semiconductor thin film having a pin or pn junction are both exposed, and both surfaces are in contact with an electrolyte or are spaced from each other. And oxygen gas and / or hydrogen gas is generated by light irradiation to the semiconductor core. Thereby, the light energy conversion efficiency of HOG can be improved.

  Another TF-HOG according to the second aspect of the present invention includes a semiconductor core formed by adjoining a plurality of types of semiconductor thin films having different energy levels at intervals, and each of the tables and / or the semiconductor thin films. The back surface is exposed and is in contact with the electrolyte or in close proximity to each other, and oxygen gas and / or hydrogen gas is generated by light irradiation to the semiconductor core. Thereby, the light energy conversion efficiency of HOG can be improved.

  Another TF-HOG according to the second aspect of the present invention includes a semiconductor core formed by laminating a plurality of types of semiconductor thin films having different energy levels via thin films having a wider energy gap. The front and back surfaces of the thin film are both exposed and in contact with the electrolyte or in close proximity with each other, and oxygen gas and / or hydrogen gas is generated by light irradiation to the semiconductor core. . Thereby, the light energy conversion efficiency of HOG can be improved.

  Another TF-HOG according to the second aspect of the present invention includes a semiconductor core formed by laminating a plurality of types of semiconductor thin films having different energy levels, and both the front and back surfaces of the semiconductor thin film are exposed, and the electrolyte. Or oxygen gas and / or hydrogen gas is generated by light irradiation to the semiconductor core. Thereby, the light energy conversion efficiency of HOG can be improved.

  Another TF-HOG according to the second aspect of the present invention is characterized in that light having different wavelengths is irradiated separately from the front surface and the back surface of the semiconductor core. Thereby, the light energy conversion efficiency of HOG can be improved.

  Another TF-HOG according to the third aspect of the present invention is characterized in that a condensing lens or a condensing lens array is disposed in contact with or adjacent to the TF-HOG. To do. Thereby, semiconductor material consumption can be reduced and the cost of HOG can be reduced.

  The ILECS according to the fourth aspect of the present invention includes an optical waveguide disposed in contact with the condensing lens or the condensing lens array or adjacent to the condensing lens array, and an intermediate portion of an optical circuit including the optical waveguide or The optical energy conversion device is arranged at the end or the end of the optical fiber connected to the optical circuit. Thereby, the light energy conversion efficiency of ILECS can be improved, the size can be reduced, and the cost can be reduced.

  Another ILECS according to the fourth aspect of the present invention is characterized in that a wavelength filter is provided in a part of the optical circuit. Thereby, the light energy conversion efficiency of ILECS can be improved.

  Another ILECS according to the fourth aspect of the present invention is characterized in that the light demultiplexed by the wavelength filter is guided to a light energy conversion device having different spectral sensitivity characteristics. Thereby, the light energy conversion efficiency of ILECS can be improved.

  Another ILECS according to the fourth aspect of the present invention may be characterized in that the light energy conversion device is a HOG and / or a solar cell (SC).

  Another ILECS according to the fourth aspect of the present invention includes a three-dimensional optical circuit in which optical waveguides are stacked. As a result, the light energy conversion efficiency of the light energy conversion system can be improved and the size can be reduced.

  Another ILECS according to the fourth aspect of the invention is characterized in that at least a part of the condensing lens and the optical waveguide is manufactured by the imprint method and / or the Bilt-in Mask method. Thereby, the cost of ILECS can be reduced.

  Another ILECS according to the fourth aspect of the present invention is characterized in that microchannels through which electrolyte and / or gas pass are integrated. Thereby, the size of ILECS can be reduced and the cost can be reduced.

  The present embodiment will be described below with reference to the drawings. In each figure, the same reference numerals indicate the same elements, and duplicate descriptions are omitted. The following description explains an embodiment to which the present invention is applicable, and the scope of the present invention is not limited to this description. For clarity of explanation, the following description has been omitted and simplified as appropriate. Further, those skilled in the art will be able to easily change, add, and convert each element of the following embodiments within the scope of the present invention.

[First Embodiment]
FIG. 1 is a schematic view of a structural example of an ICS according to the present invention. Four examples are shown. In the first example, the thin film 11a and the thin film 21b are laminated via the spacer 1d. Both the front and back surfaces of the thin film have exposed portions and are arranged so as to be in contact with or close to the electrolyte 1c. Here, the electrolyte is usually a liquid, but may be a solid. In addition, other liquids, gases, and solids can be used instead of the electrolyte. In the second example, the thin film 1 and the thin film 2 on the substrate 1e are laminated. A liquid or gas micro-channel (MFC) 1f is disposed in the gap portion of the laminated structure. As used herein, “micro” means a fine size and typically represents a range from milliscale to nanoscale. As the MFC, there are a slab type in which vertical confinement is performed and a channel type in which vertical and horizontal confinement is performed. In the case of the channel type, when the ICS is viewed from above, the MFC is patterned and formed. In the third example, the thin film 1 and the thin film 2 are laminated, and the MFC is formed in multiple layers. Furthermore, a flow path connecting the layers is formed. When the MFC is disposed on both sides of the outermost thin film, the cover layer 1g is required. In the third example, an example in which the flow path connecting the layers is not formed is the fourth example. In this case, different liquids / gases can be put in the MFCs of the respective layers.

  FIG. 2 is a schematic diagram of a manufacturing process in the ICS according to the present invention. The thin film 1 is produced on the growth substrate 11e1, and the thin film 2 is produced on the growth substrate 21e2. These are stacked through a spacer, and the growth substrate is removed. By immersing this in an electrolyte, the configuration of the first example of FIG. 1 can be realized. The spacer can also be produced by partial etching or film growth when the thin films 1 and 2 are formed. By removing only one of the growth substrates after the stacking, the configuration of the second example of FIG. 1 can be realized. The thin film may be laminated after the growth substrate is removed.

  FIG. 3 is a schematic diagram of another manufacturing process in the ICS according to the present invention. A removable material film (Removable Film) 1h is patterned on the substrate 11e. Next, a spacer material is embedded. Thereafter, planarization such as CMP may be performed as necessary. Next, the thin film 1 is formed. When patterning is required, it is desirable to embed a removable film in a portion where the thin film 1 is not provided and planarize it. A lift-off method, an etching method, a selective growth method, or a combination of these methods can be used. The same process is repeated to form the thin film 2 and the cover layer. This is exposed to a liquid or gas that dissolves the Removable Film, and the Removable Film is removed. By putting liquid or gas into the gap part, a multilayer MFC can be formed, and the configuration of the third example of FIG. 1 can be realized. When the thin film is a solid film, the configuration of the fourth example in FIG. 1 can be realized. The spacer can also be produced by partial etching or film growth when forming the thin films 1 and 2. In this case, the spacer is made of the same material as the thin films 1 and 2.

As the material for the thin film, various materials such as TiOx, ZnO, Pt—WO ₃ , Pt—SrTiO ₃ : Cr—Ta, Si, SiO ₂ can be used. As the removable material, for example, various materials such as various metals such as Cu, Cr, Ni, photoresist, various polymers such as polyvinyl alcohol, various dielectrics and semiconductors such as SiO ₂ and Si, and the like are used. be able to.

  As described above, ICS makes it possible to realize the miniaturization and integration of devices including chemical processes such as photochemistry and electrochemistry, and to increase the efficiency and functionality associated therewith. ICS is particularly effective in TH-HOG and ILECS described below.

[Second Embodiment]
FIG. 4 is a schematic diagram of the structure and energy levels of Solar Cell (SC) and HOG shown as an example of a conventional typical optical energy conversion device. In SC (I), a semiconductor (such as Si) 2a having a pin (or pn) structure is sandwiched between two electrodes 2b and 2c. When light strikes the semiconductor, electrons 4 and holes 5 are generated, current flows, and a solar cell is formed. In SC (II), an n-type semiconductor such as ZnO or TiOx is sandwiched between the electrode and the electrolyte 2d. When light strikes the semiconductor, electrons flow to the electrode 2b side. The holes are absorbed by the opposing electrode 2c through the electrolyte. Thereby, it becomes a solar cell. When the semiconductor is p-type, the flow of electrons and holes is reversed. Spectral sensitization can be performed by adsorbing and forming molecules or materials having a narrower energy gap than the semiconductor band gap, such as a dye, on the semiconductor surface (the energy diagram of FIG. 4 represents this case). In HOG, a semiconductor 1 (for example, Pt—WO ₃ or the like) 3a ′ and a semiconductor 2 (for example, Pt—SrTiO ₃ : Cr—Ta or the like) 3e ′ are immersed in an electrolyte 3d ′ as particles. The semiconductor 1 absorbs light of wavelength λ1, and holes are combined with OH ⁻ to generate oxygen. The electrons reach the semiconductor 2 via ions in the electrolyte, where they are excited by light of wavelength λ2 and H ⁺ bonds to generate hydrogen.

  In the conventional HOG, since electron transfer occurs between dispersed particles, it is difficult to optimize energy transfer efficiency. Therefore, the following TF-HOG was devised. FIG. 5 is a schematic diagram of a structural example and energy levels of TF-HOG according to the present invention. In the TF-HOG shown in FIG. 5A, a semiconductor core 6f made of a semiconductor 6a having a pin (or pn) junction structure is used. The semiconductor core is typically a thin film having a thickness of the order of 1 nm to 10 μm, and both the front and back surfaces are in contact with or adjacent to the electrolyte 6d. When the semiconductor core is irradiated with light, electrons and holes are separated, electrons generate hydrogen, and holes generate oxygen. Si or the like can be used as a semiconductor material.

In the TF-HOG shown in FIG. 5B, a semiconductor core 3f is used in which a semiconductor 13a and a semiconductor 23e are adjacent to each other with a gap therebetween. The semiconductors 1 and 2 are typically thin films having a thickness of the order of 1 nm to 10 μm, and both the front and back surfaces or one surface are in contact with the electrolyte or at a distance from each other. The interval between the semiconductors 1 and 2 is, for example, on the order of 1-1000 μm. The semiconductor 1 absorbs light of wavelength λ1, and holes are combined with OH ⁻ to generate oxygen. Electrons reach the semiconductor 2 via ions in the electrolyte, where they are excited by light of wavelength λ2 and combine with H ⁺ to generate hydrogen. This mechanism is the same as that of the HOG shown in FIG. 4, but since the arrangement of the semiconductors 1 and 2 can be controlled as designed, an increase in light energy conversion efficiency can be expected by optimizing the arrangement. As the semiconductors 1 and 2, for example, metal oxide thin films such as Pt—WO ₃ , Pt—SrTiO ₃ : Cr—Ta can be used. Examples of film forming methods include sputtering, vapor deposition, chemical vapor deposition (CVD), and atomic layer deposition (ALD).

The TF-HOG shown in FIG. 5C has a structure in which the electrolyte is replaced with a wide gap material 3g such as SiO ₂ in FIG. 5B. The wide gap material inserted between the semiconductors 1 and 2 can efficiently separate electrons and holes generated by light, and can improve conversion efficiency. The electronic transition from the semiconductor 1 to the semiconductor 2 becomes more efficient when passing through the in-band level of the wide gap material (level due to defects or dopants).

  The TF-HOG shown in FIG. 5 (d) has a structure in which the wide gap material is omitted from FIG. 5 (c). Since there is no barrier due to the wide gap material, the efficiency of separation of electrons and holes generated by light may be reduced, but there is an advantage that the structure is simple.

  In the above embodiments, spectral sensitization can be achieved by “coating a narrow gap material” on a semiconductor or “adsorbing a molecule such as a laser dye or ruthenium dye”. Thereby, the absorption wavelength band can be controlled, and the light energy conversion efficiency can be improved. An organic semiconductor such as a conjugated polymer can also be used as the semiconductor. When using an organic semiconductor, it is effective to orient the molecular chain in the carrier transmission direction or to control the molecular arrangement inside the molecular chain by organic CVD or Molecular Layer Deposition (MLD).

  FIG. 6 to FIG. 9 are schematic views of three-dimensional structure examples of TF-HOG provided as variations of the structure shown in FIG. Here, as a representative example, the structure of FIGS. 5A and 5B is used as an example, but the same concept can be applied to other structures. In FIG. 6, the semiconductor core is made of a solid film. In FIG. 7, the semiconductor core is divided and arranged, and in FIG. 8, the semiconductor core has a window. The direction of light irradiation may be basically on either side. When two or more wavelengths are used, it is desirable to irradiate light from the semiconductor side whose light absorption band matches the wavelength. FIG. 9 is an example in which the semiconductors 1 and 2 are arranged side by side in the structure of FIG. 5B to form a semiconductor core 13f1 and a semiconductor core 23f2. Semiconductor cores 1 and 2 are arranged on the mosaic. In this case, ions flow mainly in the in-plane direction. From the viewpoint of light utilization efficiency, it is desirable to selectively irradiate light to a semiconductor whose light absorption band matches the wavelength (for example, λ1 to semiconductor 1 and λ2 to semiconductor 2).

[Third Embodiment]
FIG. 10 is a schematic diagram of a structural example of TF-HOG according to the present invention. The condenser lens 10 is in contact with or adjacent to each other with a gap and is coupled to the semiconductor core inside the TF-HOG 12. Thereby, the area of the semiconductor core, that is, the amount of members can be reduced, and the cost can be reduced. The amount of acquired energy is increased by arranging the condensing lens / TF-HOG pairs in an array.
[Fourth Embodiment]

FIG. 11 is a schematic diagram of an example of the structure of the ILECS in which the optical waveguide 13a is introduced. An optical waveguide is disposed in contact with or adjacent to the condenser lens. The light collected by the condenser lens is made incident on the optical waveguide, led to the semiconductor and the semiconductor core in the SC and TF-HOG, and converted into light energy. Necessary SC and TF-HOG can be reduced by merging several optical waveguides. The SC and TF-HOG can be integrated on the substrate 14, or placed outside and connected to the optical waveguide by an optical fiber 13b or the like. By transmitting light collected outdoors to SC or TF-HOG using an optical fiber, SC or TF-HOG can be used under good environmental conditions (for example, indoors). Further, by integrating the wavelength filter 13c, it is possible to demultiplex and irradiate the SC and TF-HOG matched with the wavelength band with the light of each wavelength band. This increases the energy conversion efficiency. FIG. 12 shows an example in which a condensing lens, an optical waveguide, and CS / TF-HOG are integrated on a large scale. In this case, a large number of various parts must be arranged. This can be performed at a low cost with a small number of steps by using Photolithographic Packaging with Selective Repeated Transfer (PL-Pack with SORT) that can transplant and arrange different kinds of members at once (for example, Non-Patent Document 2). ).

  FIG. 13 is a cross-sectional view of the condensing lens-optical waveguide coupling portion and the optical waveguide-SC / TF-HOG coupling portion. As the condensing lens, it is assumed that the lens 10a by imprint described later or the lens 10b by Bilt-in Mask is used, and the waveguide films 15 and 15 'are used as the optical waveguide. Regarding the condensing lens-optical waveguide coupling portion, the lens arrangement position differs depending on whether the 45 ° mirror surface of the waveguide core is a down-taper or an up-taper. In the former, a lens is placed on the clad film side of the waveguide film. On the other hand, in the latter, a lens is placed on the waveguide core side. The waveguide film can be used stand alone or can be placed on the substrate 16. Regarding the optical waveguide-SC / TF-HOG coupling portion, when the 45 ° mirror surface of the waveguide core is a down-taper, SC / TF-HOG is placed on the clad film side of the waveguide film. On the other hand, when the mirror surface is up-taper, SC / TF-HOG is placed on the waveguide core side. The waveguide film can be used stand alone or can be placed on the substrate 16. SC / TF-HOG can also be embedded in a film. As a material of the lens, the waveguide film, and the embedded film, for example, thermoplasticity, photocuring property, photo-refractive, heat resistant polymer, and glass can be used. As a manufacturing method, various methods such as an imprint method and a built-in mask method can be used in addition to normal etching.

  FIG. 14 shows an example in which SC / TF-HOG is sandwiched between a plurality of laminated waveguide films and light is irradiated from a plurality of directions at the optical waveguide-SC / TF-HOG coupling portion. In this case, the optical circuit has a three-dimensional structure. For example, the light is branched by a filter and irradiated with light of different wavelengths from different directions. This method is particularly effective when there are materials having different light absorption bands as in the configurations of FIGS. 5B, 5C, and 5D.

  FIG. 15 shows a process for producing ILECS using heat or UV imprint. The resin 20 is molded into a lens shape by a mold 21 and arranged on the SC / TF-HOG in alignment with the semiconductor and the semiconductor core. As the thermal or UV imprint, a widely known existing method can be used (for example, Non-Patent Document 3). In ILECS including an optical waveguide, the lens is disposed in alignment with the 45 ° mirror portion of the waveguide. The shape of the lens is not necessarily a circle. Various patterns such as a polygon such as a quadrangle and an ellipse can be applied depending on the application.

  FIG. 16 shows a process for producing ILECS using the Bilt-in Mask method. A peeling layer 28 and a cladding layer 24 are formed on a built-in mask 23 having a window at a position corresponding to the lens array, and a photosensitive layer 25 is formed thereon. By irradiating light from the Bilt-in Mask side, the photosensitive layer is exposed, and a cured or refractive index changing region 26 having an oblique wall is produced. A condensing lens array can be produced by rotating incident light or Built-in Mask. This is pasted on a support substrate 27 having Gel-Pak or the like disposed on the surface, for example, and the release layer is removed and picked up on the support substrate. If necessary, coat the lens wall with a reflective film such as metal or dielectric. The lens array thus completed is arranged on the SC / TF-HOG so as to be aligned with the semiconductor and the semiconductor core. For example, an adhesive or a UV curable material can be used for fixing. In ILECS including an optical waveguide, the lens is disposed in alignment with the 45 ° mirror portion of the waveguide. The shape of the built-in mask window is not necessarily a circle. Various patterns such as a polygon such as a quadrangle and an ellipse can be applied depending on the application.

FIG. 17 shows a structural example in which MFCs are integrated in ILECS. In FIG. 17 (a), light is irradiated to the semiconductor core of the TF-HOG in FIG _{5 (a), O 2,} H 2 is generated from the other surface from one surface. By passing these through MFC1 30 and MFC2 31 provided on the respective surfaces, O ₂ and H ₂ can be separated and collected. In FIG. 17B, a waveguide film is disposed close to the semiconductor core, and light from a 45 ° mirror is irradiated. When the waveguide core is exposed to the electrolyte as in this example, total reflection due to the 45 ° inclination does not occur. It is necessary to attach a reflection film such as a metal or a dielectric to the end face. In FIG. 17C, the semiconductor core of FIGS. 5C and 5D is irradiated with light from both sides using an optical waveguide. A three-dimensional optical circuit is used. FIG. 17D shows a method of irradiating the semiconductor core with light using an optical waveguide in SC (II) of FIG. This eliminates the need for a transparent electrode, which was necessary in the past, and helps reduce costs. In this example, electricity is generated instead of gas, so the MFC 32 can be used for refreshing the electrolyte. FIG. 18 shows an example in which two MFCs are patterned to form a gas collection circuit that collects gas from each TF-HOG.

  In the fourth embodiment, a waveguide film without overclad has been described as an example in order to simplify drawing. It goes without saying that the same principle holds true when a waveguide film with an overclad is used.

  As one of the methods for manufacturing TF-HOG and ILECS shown in the second to fourth embodiments, the process described in FIGS. 2 and 3 of the first embodiment can be applied.

  The system shown in the first to fourth embodiments includes a semiconductor thin film, a condensing lens, an optical waveguide, a micro flow path, and the like with both surfaces exposed. These can be regarded as integrated circuits in which light / electricity / chemical / liquid / gas / solid are fused, and are effective means for miniaturization, low cost and high performance of chemical systems, light energy conversion systems and the like. ICS and ILECS are also effective in fields other than energy, such as biotechnology, material synthesis, and reaction chemistry.

  T. T. et al. Yoshimura, K .; Kumai, T .; Mikawa, and O.M. Ibaragi, “Photolithographic Packing with Selective Occupied Repeated Transfer (PL-Pack with SORT) for Scalable Optical Link Multi-E-MulE Electron. Packag. Manufact. , Vol. 25, pp. 19-25, 2002. .   Shinji Matsui, “Chip Fabrication Technology Using a New Approach,” Applied Physics, vol. 74, pp. 501-505, 2005. .

  It is a schematic diagram of the structural example of the integrated chemical system (ICS) by 1st Embodiment of this invention.   It is a schematic diagram of the preparation process in ICS by 1st Embodiment of this invention.   It is a schematic diagram of the preparation process in ICS by 1st Embodiment of this invention. It is a schematic view of the structure and energy level of a conventional typical optical energy Solar Cell shown as an example of the translation device (SC) and _{H 2 / O 2 Generator (HOG} ).   It is the structural example of Thin-Film HOG (TF-HOG) by 2nd Embodiment of this invention, and the schematic diagram of an energy level.   It is a schematic diagram of the example of the three-dimensional structure of TF-HOG by 2nd Embodiment of this invention.   It is a schematic diagram of the example of the three-dimensional structure of TF-HOG by 2nd Embodiment of this invention.   It is a schematic diagram of the example of the three-dimensional structure of TF-HOG by 2nd Embodiment of this invention.   It is a schematic diagram of the example of the three-dimensional structure of TF-HOG by 2nd Embodiment of this invention.   It is a schematic diagram of the structural example of TF-HOG by 3rd Embodiment of this invention.   It is a schematic diagram of the structural example of the integrated energy conversion system (ILECS) which introduce | transduced the optical waveguide by 4th Embodiment of this invention.   It is a schematic diagram of the structural example of ILECS which introduce | transduced the optical waveguide by 4th Embodiment of this invention.   It is a schematic diagram of the structural example of the 45-degree waveguide mirror peripheral part in ILECS which introduced the optical waveguide by 4th Embodiment of this invention.   It is a schematic diagram of the structural example of the 45-degree waveguide mirror peripheral part in ILECS which introduced the optical waveguide by 4th Embodiment of this invention.   It is a production process of ILECS using thermal or UV imprint in ILECS into which an optical waveguide according to a fourth embodiment of the present invention is introduced.   It is a manufacturing process of ILECS using the Built-in Mask method in ILECS which introduce | transduced the optical waveguide by 4th Embodiment of this invention.   It is the structural example of the part which integrated MFC in ILECS which introduced the optical waveguide by 4th Embodiment of this invention.   It is the structural example of the part which integrated MFC in ILECS which introduced the optical waveguide by 4th Embodiment of this invention.

Explanation of symbols

  Thin film 1 1a, thin film 2 1b, electrolyte 1c, spacer 1d, substrate 1e, microchannel (MFC) 1f, cover layer 1g, growth substrate 1 1e1, growth substrate 2 1e2, removable material film (Removable Film) 1h, semiconductor 2a, electrode 2b, electrolyte 2d, electrode 2c, semiconductor 1 3a, 3a ′, electrolyte 3d, 3d ′, semiconductor 2 3e, 3e ′, semiconductor core 3f, semiconductor core 1 3f1, semiconductor core 2 3f2, wide gap material 3g, Electron 4, hole 5, semiconductor 6a, semiconductor core 6f, electrolyte 6d, condenser lens 10, SC 11, TF-HOG 12, optical waveguide 13a, optical fiber 13b, wavelength filter 13c, substrate 14, lens by imprint 10a, Lens by Built-in Mask 1 b, waveguide film 15, 15 ', substrate 16, resin 20, mold 21, reflective film 22, Built-in Mask 23, cladding layer 24, photosensitive layer 25, cured or refractive index changing region 26, support substrate 27, peeling Layer 28, MFC1 30, MFC2 31, MF32

Claims (21)

  Both the front and back surfaces of the thin film have an exposed portion, and the exposed portion includes a structure that is in contact with or in close proximity to a liquid and / or gas and / or ion conductive solid. Integrated chemical system (ICS).   A plurality of thin films are adjacent to each other with an interval, and two or more surfaces of the thin film have an exposed portion, and the exposed portion is in contact with or spaced from a liquid and / or a gas and / or an ion conductive solid. An ICS comprising a structure that is in close proximity.   The ICS according to claim 1-2, wherein a liquid and / or a gap between the thin film and / or a gap between the thin film and the substrate and / or a gap between the thin film and the cover layer are used. An ICS, wherein a gas flow path is formed.   4. The ICS according to claim 3, wherein the flow path is patterned.   5. The ICS according to claim 4, wherein at least one of the gap portions is a liquid and / or gas and / or ion conductive material of a different type from the liquid and / or gas and / or ion conductive solid contained in the other gap portion. An ICS comprising a solid.   5. The ICS according to claim 4, wherein a flow path that connects the gap portions is formed.   The ICS according to claim 1-2, wherein the thin film is produced by peeling the thin film formed on the growth substrate from the substrate.   The ICS according to claim 1-2, wherein the gap portion between the thin film and / or the gap portion between the thin film and the substrate and / or the portion corresponding to the gap portion between the thin film and the cover layer is provided. An ICS, wherein a gap portion is formed by removing a layered structure formed by patterning and arranging a removable material and then removing the removable material.   The semiconductor core made of a semiconductor thin film having a pin or pn junction has both the p-type semiconductor surface and the n-type semiconductor surface exposed, and both surfaces are in contact with the electrolyte or in close proximity to each other. A thin film hydrogen / oxygen gas generator (TF-HOG) characterized in that oxygen gas and / or hydrogen gas is generated by the above.   A semiconductor core comprising a plurality of types of semiconductor thin films having different energy levels adjacent to each other with a gap therebetween, the front and / or back surfaces of each of the semiconductor thin films being exposed and in contact with or adjacent to the electrolyte. TF-HOG characterized in that oxygen gas and / or hydrogen gas is generated by light irradiation to the semiconductor core.   A semiconductor core is formed by laminating multiple types of semiconductor thin films with different energy levels through thin films with wider energy gaps, and the front and back surfaces of the semiconductor thin film are both exposed and in contact with the electrolyte or spaced apart. TF-HOG is characterized in that oxygen gas and / or hydrogen gas is generated by light irradiation to the semiconductor core.   A semiconductor core is formed by stacking multiple types of semiconductor thin films with different energy levels, and the front and back surfaces of the semiconductor thin film are both exposed and in contact with the electrolyte or in close proximity to each other. TF-HOG, wherein oxygen gas and / or hydrogen gas is generated by light irradiation.   The TF-HOG according to claim 9-12, wherein light having different wavelengths is irradiated separately from the front surface and the back surface of the semiconductor core.   The TF-HOG according to claim 9-12, wherein the condenser lens or the condenser lens array is disposed in contact with or adjacent to the TF-HOG. .   An optical fiber provided with an optical waveguide arranged in contact with or adjacent to a condensing lens or a condensing lens array, and being connected to the middle or end of an optical circuit including the optical waveguide or to the optical circuit An integrated light energy conversion system (ILECS) characterized in that a light energy conversion device is disposed at the end of the light source.   16. The ILECS according to claim 15, wherein a wavelength filter is provided in a part of the optical circuit.   The ILECS according to claim 16, wherein the light demultiplexed by the wavelength filter is guided to a light energy conversion device having different spectral sensitivity characteristics.   16. ILECS according to claim 15, characterized in that the light energy conversion device is a HOG and / or a solar cell (SC).   16. The ILECS according to claim 15, further comprising a three-dimensional optical circuit in which optical waveguides are laminated.   16. The ILECS according to claim 15, wherein at least a part of the condensing lens and the optical waveguide is produced by an imprint method and / or a built-in mask method.   The ILECS according to claim 15, wherein microchannels through which electrolyte and / or gas pass are integrated.

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