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JP2007088095A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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Publication number
JP2007088095A
JP2007088095A JP2005272872A JP2005272872A JP2007088095A JP 2007088095 A JP2007088095 A JP 2007088095A JP 2005272872 A JP2005272872 A JP 2005272872A JP 2005272872 A JP2005272872 A JP 2005272872A JP 2007088095 A JP2007088095 A JP 2007088095A
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Prior art keywords
led chip
light
metal plate
submount member
electrode
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JP2005272872A
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Japanese (ja)
Inventor
Sakuo Kamata
策雄 鎌田
Yasushi Nishioka
恭志 西岡
Yoji Urano
洋二 浦野
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Panasonic Electric Works Co Ltd
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Matsushita Electric Works Ltd
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Priority to JP2005272872A priority Critical patent/JP2007088095A/en
Publication of JP2007088095A publication Critical patent/JP2007088095A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device that has high heat radiation properties and reliability, and strong directivity of mixed color light. <P>SOLUTION: The light-emitting device includes a reflector 40 for surrounding an LED chip 10 and bonding wires 14, 14 at the packaging surface side of the LED chip 10 in a packaging substrate 20. A submount member 30 for relaxing stress operating on the LED chip 10 caused by the difference in the coefficient of thermal expansion between the LED chip 10 and a metal plate 21 and thermally combining both of them is interposed between the LED chip 10 and the metal plate 21. An electrode at the side of the submount member 30 in both the electrodes of the LED chip 10 is connected to one bonding wire 14 via a conductive pattern provided at the submount member, and an electrode at a side opposite to the side of the submount member 30 is directly connected to the other bonding wire 14. A sealing section 50 is formed by a silicone resin, contains a yellow phosphor that is excited by light radiated from the LED chip 10 and radiates yellow-based light, and is formed in the shape of a convex lens. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、LEDチップ(発光ダイオードチップ)を利用した発光装置に関するものである。   The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

従来から、複数個のLEDチップがフェースアップで直接実装された金属ベース板と、金属ベース板に積層され各LEDチップの両電極それぞれがボンディングワイヤを介して接続される配線パターンが形成されたプリント配線板と、金属ベース板におけるLEDチップの実装面側でLEDチップおよび当該LEDチップに接続されたボンディングワイヤをエポキシ樹脂により封止した封止部とを備え、封止部を凸レンズ状の形状とすることで指向性を強く(言い換えれば、封止部を通して放射される光の立体角を小さく)した発光装置が提案されている(例えば、特許文献1)。   Conventionally, a metal base plate in which a plurality of LED chips are directly mounted face-up, and a wiring pattern in which both electrodes of each LED chip are connected via bonding wires are stacked on the metal base plate. A wiring board; and a sealing part in which the LED chip and a bonding wire connected to the LED chip are sealed with an epoxy resin on the mounting surface side of the LED chip in the metal base plate, and the sealing part has a convex lens shape. Thus, there has been proposed a light emitting device that has a high directivity (in other words, a small solid angle of light emitted through the sealing portion) (for example, Patent Document 1).

また、従来から、青色光ないし紫外光を放射するLEDチップと当該LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体とを組み合わせることにより、白色を含めLEDチップの発光色とは異なる色合いの混色光を得る技術が広く知られている。
特開2003−152225号公報
In addition, conventionally, by combining an LED chip that emits blue light or ultraviolet light and a phosphor that emits light of a color different from the emission color of the LED chip by being excited by the light emitted from the LED chip, A technique for obtaining mixed color light having a hue different from the emission color of the LED chip including white is widely known.
JP 2003-152225 A

しかしながら、上記特許文献1に記載の発光装置では、LEDチップを金属ベース板に直接実装しているので、放熱性に優れているが、金属ベース板とLEDチップとの線膨張率差に起因してLEDチップが破損してしまう恐れがあった。また、封止部の材料としてエポキシ樹脂を用いた場合には、封止部の耐候性が低く、しかも、封止部がLEDチップから放射される光により経時的に劣化し、特にLEDチップが青色光を放射する青色LEDチップの場合には封止部が劣化しやすいという不具合があった。   However, in the light emitting device described in Patent Document 1, since the LED chip is directly mounted on the metal base plate, the heat dissipation is excellent, but due to the difference in linear expansion coefficient between the metal base plate and the LED chip. As a result, the LED chip may be damaged. In addition, when an epoxy resin is used as the material of the sealing portion, the weather resistance of the sealing portion is low, and the sealing portion deteriorates with time due to light emitted from the LED chip. In the case of a blue LED chip that emits blue light, there is a problem in that the sealing portion tends to deteriorate.

本発明は上記事由に鑑みて為されたものであり、その目的は、放熱性および信頼性が高く、且つ、混色光の指向性が強い発光装置を提供することにある。   The present invention has been made in view of the above-described reasons, and an object thereof is to provide a light-emitting device that has high heat dissipation and reliability and strong directivity of mixed color light.

請求項1の発明は、LEDチップと、LEDチップが実装された実装基板と、当該実装基板におけるLEDチップの実装面側でLEDチップを囲みLEDチップから放射された光を反射するリフレクタであって前記実装面から離れるにつれて開口面積が徐々に大きくなる形状に形成されたリフレクタと、LEDチップおよび当該LEDチップに電気的に接続された一対のボンディングワイヤを封止した封止部とを備え、実装基板は、金属板と、金属板側とは反対の表面にLEDチップの両電極それぞれと電気的に接続される一対のリードパターンが設けられるとともにLEDチップに対応する部位に窓孔が設けられ金属板に積層された絶縁性基材とからなり、LEDチップは、一表面側に一方の電極が形成されるとともに他表面側に他方の電極が形成されており、当該LEDチップと金属板との間に両者の線膨張率差に起因して当該LEDチップに働く応力を緩和するサブマウント部材であってLEDチップのチップサイズよりもサイズが大きくLEDチップと金属板とを熱結合させるサブマウント部材を介して金属板に実装され、両電極のうちサブマント部材側の電極が当該サブマウント部材に設けた導体パターンを介して一方のボンディングワイヤと接続されるとともにサブマウント部材側とは反対側の電極が他方のボンディングワイヤと直接接続され、封止部は、シリコーン樹脂により形成され、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を含有するとともに、凸レンズ状の形状に形成されてなることを特徴とする。   The invention of claim 1 is an LED chip, a mounting substrate on which the LED chip is mounted, and a reflector that surrounds the LED chip on the mounting surface side of the LED chip on the mounting substrate and reflects light emitted from the LED chip. A reflector having a shape in which an opening area gradually increases as the distance from the mounting surface increases, and a sealing portion that seals the LED chip and a pair of bonding wires that are electrically connected to the LED chip; The substrate is provided with a metal plate and a pair of lead patterns that are electrically connected to both electrodes of the LED chip on the surface opposite to the metal plate side, and a window hole is provided in a portion corresponding to the LED chip. The LED chip is composed of an insulating substrate laminated on a plate, and an LED chip has one electrode formed on one surface side and the other electrode on the other surface side. Is a submount member that relieves stress acting on the LED chip due to a difference in linear expansion coefficient between the LED chip and the metal plate, and is smaller than the chip size of the LED chip. Largely mounted on a metal plate via a submount member that thermally couples the LED chip and the metal plate, and the electrode on the submant member side of both electrodes is connected to one bonding wire via a conductor pattern provided on the submount member. Connected and the electrode on the opposite side of the submount member is directly connected to the other bonding wire, and the sealing portion is formed of silicone resin and excited by light emitted from the LED chip to emit light from the LED chip. It contains a phosphor that emits light of a color different from the color, and is formed into a convex lens shape To.

この発明によれば、LEDチップと金属板との間に、両者の線膨張率差に起因して当該LEDチップに働く応力を緩和するサブマウント部材であってLEDチップのチップサイズよりもサイズが大きくLEDチップと金属板とを熱結合させるサブマウント部材を介在させてあるので、放熱性が高く、且つ、前記線膨張率差に起因してLEDチップが破損するのを防止することができて信頼性を高めることができる。また、実装基板におけるLEDチップの実装面側でLEDチップおよび各ボンディングワイヤを封止する封止部が、シリコーン樹脂により形成されているので、エポキシ樹脂により形成されている場合に比べて、耐候性を高めることができるとともにLEDチップから放射される光による劣化が起こりにくくなり、信頼性がより一層高くなる。また、封止部が、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を含有するとともに、凸レンズ状の形状に形成されているので、LEDチップから放射される光と蛍光体から放射される光との混色光の指向性を強めることができる。   According to this invention, the LED chip and the metal plate are submount members that relieve stress acting on the LED chip due to the difference in linear expansion coefficient between the two and have a size that is larger than the chip size of the LED chip. Since a submount member that thermally couples the LED chip and the metal plate is interposed, the heat dissipation is high and the LED chip can be prevented from being damaged due to the difference in linear expansion coefficient. Reliability can be increased. Moreover, since the sealing part which seals an LED chip and each bonding wire in the mounting surface side of the LED chip in a mounting substrate is formed with the silicone resin, it is weatherproof compared with the case where it is formed with an epoxy resin. In addition, the deterioration due to the light emitted from the LED chip is less likely to occur, and the reliability is further enhanced. In addition, since the sealing portion contains a phosphor that is excited by light emitted from the LED chip and emits light of a color different from the emission color of the LED chip, and is formed in a convex lens shape, The directivity of the mixed color light of the light emitted from the LED chip and the light emitted from the phosphor can be enhanced.

請求項1の発明では、放熱性および信頼性が高く、且つ、混色光の指向性が強いという効果がある。   According to the first aspect of the present invention, there is an effect that heat dissipation and reliability are high and the directivity of the mixed color light is strong.

以下、本実施形態の発光装置について図1〜図5を参照しながら説明する。   Hereinafter, the light-emitting device of the present embodiment will be described with reference to FIGS.

本実施形態の発光装置1は、LEDチップ10と、LEDチップ10が実装された実装基板20と、実装基板20におけるLEDチップ10の実装面側でLEDチップ10を囲みLEDチップ10から放射された光を反射する枠状のリフレクタ40と、LEDチップ10および当該LEDチップ10に接続されたボンディングワイヤ14,14を封止し且つ弾性を有する封止部50とを備えている。なお、本実施形態の発光装置1は、例えばスポットライトなどの照明器具の光源として用いるものであり、例えばグリーンシートからなる絶縁層90を介して金属(例えば、Al、Cuなどの熱伝導率の高い金属)製の器具本体100に実装することで、LEDチップ10から器具本体100までの熱抵抗を小さくすることができて放熱性が向上し、LEDチップ10のジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。ここで、照明器具の場合には、所望の光出力が得られるように、器具本体100に複数個の発光装置1を実装して(なお、図5では、10個の発光装置1を有底円筒状の器具本体100の底壁の内底面において周方向に沿って等間隔で配置した例を示してある)、複数個の発光装置1を直列接続したり並列接続したりすればよい。   The light emitting device 1 of the present embodiment radiates from the LED chip 10, the LED chip 10, the mounting substrate 20 on which the LED chip 10 is mounted, the LED chip 10 on the mounting substrate 20 side of the mounting substrate 20. A frame-shaped reflector 40 that reflects light, and a sealing portion 50 that seals the LED chip 10 and the bonding wires 14 and 14 connected to the LED chip 10 and has elasticity. The light-emitting device 1 of the present embodiment is used as a light source of a lighting fixture such as a spotlight, for example, and has a metal (for example, Al, Cu or the like having a thermal conductivity through an insulating layer 90 made of a green sheet, for example. By mounting on the device body 100 made of a high metal), the thermal resistance from the LED chip 10 to the device body 100 can be reduced, the heat dissipation is improved, and the temperature rise of the junction temperature of the LED chip 10 can be suppressed. Therefore, the input power can be increased and the optical output can be increased. Here, in the case of a lighting fixture, a plurality of light emitting devices 1 are mounted on the fixture main body 100 so as to obtain a desired light output (in FIG. 5, ten light emitting devices 1 are bottomed). An example is shown in which the inner bottom surface of the bottom wall of the cylindrical instrument body 100 is arranged at equal intervals along the circumferential direction), and a plurality of light emitting devices 1 may be connected in series or in parallel.

実装基板20は、LEDチップ10が搭載される金属板21と、金属板21に積層されたガラスエポキシ基板からなる絶縁性基材22とで構成されており、当該絶縁性基材22における金属板21側とは反対側の表面にLEDチップ10の図示しない両電極それぞれと電気的に接続される一対のリードパターン23が設けられるとともに、絶縁性基材22においてLEDチップ10に対応する部位に窓孔24が設けられており、LEDチップ10で発生した熱が絶縁性基材22を介さずに金属板21に伝熱できるようになっている。ここにおいて、金属板21の材料としてはCuを採用しているが、熱伝導率の比較的高い金属材料であればよく、Cuに限らず、Alなどを採用してもよい。なお、金属板21と絶縁性基材22とは、絶縁性を有するシート状の接着フィルムからなる固着材25により固着されている。また、各リードパターン23は、Ni膜とAu膜との積層膜により構成されており、色変換部材70により覆われていない部位がアウターリード部23bとなっている。また、絶縁性基材22は、窓孔24の周囲に、LEDチップ10から放射された光を反射する反射膜27が形成されている。ここで、反射膜27は、Ni膜とAg膜との積層膜により構成されている。   The mounting substrate 20 includes a metal plate 21 on which the LED chip 10 is mounted, and an insulating base material 22 made of a glass epoxy substrate laminated on the metal plate 21, and the metal plate in the insulating base material 22. A pair of lead patterns 23 that are electrically connected to both electrodes (not shown) of the LED chip 10 are provided on the surface opposite to the 21 side, and a window is formed at a portion corresponding to the LED chip 10 in the insulating substrate 22. A hole 24 is provided so that heat generated in the LED chip 10 can be transferred to the metal plate 21 without passing through the insulating base material 22. Here, Cu is employed as the material of the metal plate 21, but any metal material having a relatively high thermal conductivity may be used, and not only Cu but Al or the like may be employed. In addition, the metal plate 21 and the insulating base material 22 are fixed by a fixing material 25 made of an insulating sheet-like adhesive film. Each lead pattern 23 is composed of a laminated film of a Ni film and an Au film, and a portion not covered with the color conversion member 70 is an outer lead portion 23b. Further, the insulating base material 22 is formed with a reflection film 27 that reflects light emitted from the LED chip 10 around the window hole 24. Here, the reflection film 27 is formed of a laminated film of a Ni film and an Ag film.

LEDチップ10は、青色光を放射するGaN系青色LEDチップであり、結晶成長用基板としてサファイア基板に比べて格子定数や結晶構造がGaNに近く且つ導電性を有するn形のSiC基板からなる導電性基板11を用いており、導電性基板11の主表面側にGaN系化合物半導体材料により形成されて例えばダブルへテロ構造を有する積層構造部からなる発光部12がエピタキシャル成長法(例えば、MOVPE法など)により成長され、導電性基板11の裏面に図示しないカソード側の電極であるカソード電極(n電極)が形成され、発光部12の表面(導電性基板11の主表面側の最表面)に図示しないアノード側の電極であるアノード電極(p電極)が形成されている。要するに、LEDチップ10は、一表面側にアノード電極が形成されるとともに他表面側にカソード電極が形成されている。上記カソード電極および上記アノード電極は、Ni膜とAu膜との積層膜により構成してあるが、上記カソード電極および上記アノード電極の材料は特に限定するものではなく、良好なオーミック特性が得られる材料であればよく、例えば、Alなどを採用してもよい。なお、本実施形態では、LEDチップ10の発光部12が導電性基板11よりも金属板21から離れた側となるように金属板21に実装されているが、LEDチップ10の発光部12が導電性基板11よりも金属板21に近い側となるように金属板21に実装するようにしてもよい。光取り出し効率を考えた場合には、発光部12を金属板21から離れた側に配置することが望ましいが、本実施形態では導電性基板11と発光部12とが同程度の屈折率を有しているので、発光部12を金属板21に近い側に配置しても光の取り出し損失が大きくなりすぎることはない。   The LED chip 10 is a GaN-based blue LED chip that emits blue light, and is a conductive substrate made of an n-type SiC substrate that has a lattice constant and a crystal structure close to GaN as a crystal growth substrate and has conductivity compared to a sapphire substrate. The light-emitting portion 12 is formed of a GaN-based compound semiconductor material on the main surface side of the conductive substrate 11 and has a laminated structure portion having, for example, a double hetero structure. ), A cathode electrode (n electrode) which is a cathode side electrode (not shown) is formed on the back surface of the conductive substrate 11, and is shown on the surface of the light emitting unit 12 (the outermost surface on the main surface side of the conductive substrate 11). An anode electrode (p electrode) which is an electrode on the anode side that is not to be formed is formed. In short, the LED chip 10 has an anode electrode formed on one surface side and a cathode electrode formed on the other surface side. The cathode electrode and the anode electrode are composed of a laminated film of a Ni film and an Au film, but the material of the cathode electrode and the anode electrode is not particularly limited, and a material capable of obtaining good ohmic characteristics For example, Al or the like may be employed. In the present embodiment, the light emitting unit 12 of the LED chip 10 is mounted on the metal plate 21 so as to be on the side farther from the metal plate 21 than the conductive substrate 11. The conductive plate 11 may be mounted on the metal plate 21 so as to be closer to the metal plate 21 than the conductive substrate 11. In consideration of the light extraction efficiency, it is desirable to arrange the light emitting unit 12 on the side away from the metal plate 21, but in this embodiment, the conductive substrate 11 and the light emitting unit 12 have the same refractive index. Therefore, even if the light emitting unit 12 is disposed on the side close to the metal plate 21, the light extraction loss does not become too large.

また、LEDチップ10は、上述の金属板21に、LEDチップ10のチップサイズよりも大きなサイズの矩形板状に形成されLEDチップ10と金属板21との線膨張率の差に起因してLEDチップ10に働く応力を緩和するサブマウント部材30を介して実装されている。サブマウント部材30は、上記応力を緩和する機能だけでなく、LEDチップ10で発生した熱を金属板21においてLEDチップ10のチップサイズよりも広い範囲に伝熱させる熱伝導機能を有している。本実施形態では、サブマウント部材30の材料として熱伝導率が比較的高く且つ絶縁性を有するAlNを採用しており、LEDチップ10は、上記カソード電極がサブマウント部材30におけるLEDチップ10側の表面に設けられ上記カソード電極と接続される導体パターン31(図2参照)および金属細線(例えば、金細線、アルミニウム細線など)からなるボンディングワイヤ14を介して一方のリードパターン23と電気的に接続され、上記アノード電極がボンディングワイヤ14を介して他方のリードパターン23と電気的に接続されている。なお、LEDチップ10とサブマウント部材30とは、例えば、SnPb、AuSn、SnAgCuなどの半田や、銀ペーストなどを用いて接合すればよいが、AuSn、SnAgCuなどの鉛フリー半田を用いて接合することが好ましい。   Further, the LED chip 10 is formed on the metal plate 21 in the shape of a rectangular plate having a size larger than the chip size of the LED chip 10, and the LED chip 10 is caused by the difference in linear expansion coefficient between the LED chip 10 and the metal plate 21. It is mounted via a submount member 30 that relieves stress acting on the chip 10. The submount member 30 has not only a function of relieving the stress, but also a heat conduction function of transferring heat generated in the LED chip 10 to a range wider than the chip size of the LED chip 10 on the metal plate 21. . In the present embodiment, AlN having a relatively high thermal conductivity and insulation is used as the material of the submount member 30, and the LED chip 10 has the cathode electrode on the LED chip 10 side of the submount member 30. Electrically connected to one lead pattern 23 via a bonding wire 14 provided on the surface and connected to the cathode electrode (see FIG. 2) and a metal wire (for example, a gold wire, an aluminum wire, etc.) The anode electrode is electrically connected to the other lead pattern 23 via the bonding wire 14. The LED chip 10 and the submount member 30 may be bonded using, for example, solder such as SnPb, AuSn, SnAgCu, or silver paste, but may be bonded using lead-free solder such as AuSn, SnAgCu. It is preferable.

サブマウント部材30の材料はAlNに限らず、線膨張率が導電性基板11の材料である6H−SiCに比較的近く且つ熱伝導率が比較的高い材料であればよく、例えば、複合SiC、Siなどを採用してもよい。   The material of the submount member 30 is not limited to AlN, and any material may be used as long as the linear expansion coefficient is relatively close to 6H—SiC that is the material of the conductive substrate 11 and the heat conductivity is relatively high. Si or the like may be employed.

上述の封止部50の透明樹脂材料としては、シリコーン樹脂を用いており、封止部50がゲル状であって弾性を有している。   A silicone resin is used as the transparent resin material of the sealing portion 50 described above, and the sealing portion 50 is gel-like and has elasticity.

リフレクタ40は、円形状に開口した枠状の形状であって、LEDチップ10の側面から放射された光がレンズ60側へ反射されるように内側面40aの形状が設計されている。すなわち、リフレクタ40は、LEDチップ10の厚み方向においてLEDチップ10から離れるに従って開口面積が大きくなる形状(つまり、上記実装面から離れるにつれて開口面積が徐々に大きくなる形状)に形成されている。ここにおいて、リフレクタ40の材料としては、LEDチップ10から放射される光(ここでは、青色光)に対する反射率が比較的大きな材料(例えば、Alなど)を採用し、リフレクタ40の内側面40aを鏡面とすればよく、リフレクタ40は例えばアルミニウムの基材を絞り加工して形成すればよい。また、リフレクタ40は、絶縁性を有するシート状の接着フィルムからなる固着材26により実装基板20に固着されている。   The reflector 40 has a frame shape opened in a circular shape, and the shape of the inner side surface 40a is designed so that light emitted from the side surface of the LED chip 10 is reflected toward the lens 60 side. That is, the reflector 40 is formed in a shape in which the opening area increases as the distance from the LED chip 10 increases in the thickness direction of the LED chip 10 (that is, the shape in which the opening area gradually increases as the distance from the mounting surface increases). Here, as the material of the reflector 40, a material (for example, Al) having a relatively high reflectance with respect to light emitted from the LED chip 10 (here, blue light) is adopted, and the inner side surface 40a of the reflector 40 is used. What is necessary is just to make it a mirror surface, and the reflector 40 should just be formed, for example by drawing an aluminum base material. In addition, the reflector 40 is fixed to the mounting substrate 20 with a fixing material 26 made of an insulating sheet-like adhesive film.

ところで、封止部50は、LEDチップから放射された青色光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体を含有している。したがって、本実施形態の発光装置1は、LEDチップ10から放射された青色光と黄色蛍光体から放射された光とが封止部50の光出射面50aから出射されることとなり、白色光を得ることができる。なお、本実施形態では、封止部50に黄色蛍光体を含有させてあるが、封止部50に含有させる蛍光体は黄色蛍光体に限らず、例えば、赤色蛍光体と緑色蛍光体とを混合しても白色光を得ることができる。   By the way, the sealing part 50 contains a particulate yellow phosphor that is excited by blue light emitted from the LED chip and emits broad yellow light. Therefore, in the light emitting device 1 of the present embodiment, the blue light emitted from the LED chip 10 and the light emitted from the yellow phosphor are emitted from the light emitting surface 50a of the sealing unit 50, and white light is emitted. Obtainable. In the present embodiment, the yellow phosphor is contained in the sealing unit 50. However, the phosphor to be contained in the sealing unit 50 is not limited to the yellow phosphor. For example, a red phosphor and a green phosphor are included. Even when mixed, white light can be obtained.

また、封止部50は、LEDチップ10およびリフレクタ40に光軸が一致する凸レンズ状の形状に形成されている。なお、本実施形態の発光装置1では、封止部50の光出射面が当該光出射面と空気との境界で全反射させない凸曲面状に形成されているので、LEDチップ10から放射された光(LEDチップ10から放射されリフレクタ40に反射されることなく封止部50の光出射面50aに到達した光およびLEDチップ10から放射されリフレクタ40の内側面40aで反射されて光出射面50aに到達した光)が光出射面50aと空気との境界で全反射されることなく放射されやすくなり、全光束を高めることができる。   In addition, the sealing portion 50 is formed in a convex lens shape in which the optical axis coincides with the LED chip 10 and the reflector 40. In the light emitting device 1 of the present embodiment, the light emitting surface of the sealing portion 50 is formed in a convex curved surface shape that does not totally reflect at the boundary between the light emitting surface and the air, and thus emitted from the LED chip 10. Light (light emitted from the LED chip 10 and reaching the light emitting surface 50a of the sealing portion 50 without being reflected by the reflector 40) and light emitted from the LED chip 10 and reflected by the inner side surface 40a of the reflector 40 and reflected by the light emitting surface 50a Can be easily emitted without being totally reflected at the boundary between the light emitting surface 50a and the air, and the total luminous flux can be increased.

以上説明した本実施形態の発光装置1では、LEDチップ10と金属板21との間に、両者の線膨張率差に起因してLEDチップ10に働く応力を緩和するサブマウント部材であってLEDチップ10のチップサイズよりもサイズが大きくLEDチップ10と金属板21とを熱結合させるサブマウント部材30を介在させてあるので、放熱性が高く、且つ、上記線膨張率差に起因してLEDチップ10が破損するのを防止することができて信頼性を高めることができる。   In the light emitting device 1 according to the present embodiment described above, the LED chip 10 and the metal plate 21 are submount members that relieve stress acting on the LED chip 10 due to a difference in linear expansion coefficient between the LED chip 10 and the metal plate 21. Since the submount member 30 which is larger than the chip size of the chip 10 and thermally couples the LED chip 10 and the metal plate 21 is interposed, the heat dissipation is high and the LED is caused by the difference in the linear expansion coefficient. The chip 10 can be prevented from being damaged, and the reliability can be improved.

また、本実施形態の発光装置1では、実装基板20におけるLEDチップ10の上記実装面側でLEDチップ10および各ボンディングワイヤ14,14を封止する封止部50が、シリコーン樹脂により形成されているので、エポキシ樹脂により形成されている場合に比べて、耐候性を高めることができるとともにLEDチップ10から放射される光による劣化が起こりにくくなり、信頼性がより一層高くなる。   In the light emitting device 1 of the present embodiment, the sealing portion 50 that seals the LED chip 10 and the bonding wires 14 and 14 on the mounting surface side of the LED chip 10 on the mounting substrate 20 is formed of silicone resin. Therefore, compared with the case where it is formed with an epoxy resin, weather resistance can be improved, and deterioration due to light emitted from the LED chip 10 does not easily occur, and reliability is further enhanced.

また、本実施形態の発光装置1では、封止部50が、LEDチップ10から放射された光によって励起されてLEDチップ10の発光色とは異なる色の光を放射する蛍光体を含有するとともに、凸レンズ状の形状に形成されているので、LEDチップ10から放射される光と蛍光体から放射される光との混色光の指向性を強めることができる。   Further, in the light emitting device 1 of the present embodiment, the sealing unit 50 contains a phosphor that is excited by light emitted from the LED chip 10 and emits light of a color different from the emission color of the LED chip 10. Since it is formed in the shape of a convex lens, the directivity of the mixed color light of the light emitted from the LED chip 10 and the light emitted from the phosphor can be enhanced.

ところで、上述の実施形態では、LEDチップ10として、発光色が青色の青色LEDチップを採用しており、導電性基板11としてSiC基板を採用しているが、SiC基板の代わりにGaN基板を用いてもよく、SiC基板やGaN基板を用いた場合には結晶成長用基板として絶縁体であるサファイア基板を用いている場合に比べて、結晶成長用基板の熱伝導率が高く結晶成長用基板の熱抵抗を小さくできる。また、LEDチップ10の発光色は青色に限らず、例えば、赤色、緑色などでもよい。すなわち、LEDチップ10の発光部12の材料はGaN系化合物半導体材料に限らず、LEDチップ10の発光色に応じて、GaAs系化合物半導体材料やGaP系化合物半導体材料などを採用してもよい。また、導電性基板11もSiC基板に限らず、発光部12の材料に応じて、例えば、GaAs基板、GsP基板などから適宜選択すればよい。   By the way, in the above-described embodiment, a blue LED chip whose emission color is blue is adopted as the LED chip 10, and a SiC substrate is adopted as the conductive substrate 11, but a GaN substrate is used instead of the SiC substrate. In the case of using a SiC substrate or a GaN substrate, the crystal growth substrate has a higher thermal conductivity than the case of using a sapphire substrate as an insulator as the crystal growth substrate. Thermal resistance can be reduced. Further, the light emission color of the LED chip 10 is not limited to blue, and may be, for example, red or green. That is, the material of the light-emitting portion 12 of the LED chip 10 is not limited to the GaN-based compound semiconductor material, and a GaAs-based compound semiconductor material, a GaP-based compound semiconductor material, or the like may be employed according to the emission color of the LED chip 10. Further, the conductive substrate 11 is not limited to the SiC substrate, and may be appropriately selected from, for example, a GaAs substrate and a GsP substrate according to the material of the light emitting unit 12.

実施形態を示す概略断面図である。It is a schematic sectional drawing which shows embodiment. 同上を示し、一部破断した概略分解斜視図である。It is a general | schematic disassembled perspective view which showed the same and partially fractured | ruptured. 同上を示す要部概略平面図である。It is a principal part schematic plan view which shows the same as the above. 同上における絶縁性基材を示し、(a)は概略平面図、(b)は概略断面図である。The insulating base material same as the above is shown, (a) is a schematic plan view, (b) is a schematic cross-sectional view. 同上を用いた照明器具を示し、(a)は要部概略平面図、(b)は要部概略断面図である。The lighting fixture using the same is shown, (a) is a principal part schematic plan view, (b) is a principal part schematic sectional drawing.

符号の説明Explanation of symbols

10 LEDチップ
14 ボンディングワイヤ
20 実装基板
21 金属板
22 絶縁性基材
23 リードパターン
24 窓孔
30 サブマウント部材
40 リフレクタ
50 封止部
50a 光出射面
DESCRIPTION OF SYMBOLS 10 LED chip 14 Bonding wire 20 Mounting board 21 Metal plate 22 Insulating base material 23 Lead pattern 24 Window hole 30 Submount member 40 Reflector 50 Sealing part 50a Light emission surface

Claims (1)

LEDチップと、LEDチップが実装された実装基板と、当該実装基板におけるLEDチップの実装面側でLEDチップを囲みLEDチップから放射された光を反射するリフレクタであって前記実装面から離れるにつれて開口面積が徐々に大きくなる形状に形成されたリフレクタと、LEDチップおよび当該LEDチップに電気的に接続された一対のボンディングワイヤを封止した封止部とを備え、実装基板は、金属板と、金属板側とは反対の表面にLEDチップの両電極それぞれと電気的に接続される一対のリードパターンが設けられるとともにLEDチップに対応する部位に窓孔が設けられ金属板に積層された絶縁性基材とからなり、LEDチップは、一表面側に一方の電極が形成されるとともに他表面側に他方の電極が形成されており、当該LEDチップと金属板との間に両者の線膨張率差に起因して当該LEDチップに働く応力を緩和するサブマウント部材であってLEDチップのチップサイズよりもサイズが大きくLEDチップと金属板とを熱結合させるサブマウント部材を介して金属板に実装され、両電極のうちサブマント部材側の電極が当該サブマウント部材に設けた導体パターンを介して一方のボンディングワイヤと接続されるとともにサブマウント部材側とは反対側の電極が他方のボンディングワイヤと直接接続され、封止部は、シリコーン樹脂により形成され、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を含有するとともに、凸レンズ状の形状に形成されてなることを特徴とする発光装置。   An LED chip, a mounting substrate on which the LED chip is mounted, and a reflector that surrounds the LED chip on the mounting surface side of the LED chip on the mounting substrate and reflects light emitted from the LED chip, and opens as the distance from the mounting surface increases A reflector formed in a shape whose area gradually increases, and a sealing portion that seals the LED chip and a pair of bonding wires electrically connected to the LED chip, the mounting substrate includes a metal plate, A pair of lead patterns that are electrically connected to both electrodes of the LED chip are provided on the surface opposite to the metal plate side, and a window hole is provided in a portion corresponding to the LED chip and is laminated on the metal plate The LED chip has one electrode on one surface side and the other electrode on the other surface side. A submount member that relieves stress acting on the LED chip due to a difference in linear expansion coefficient between the LED chip and the metal plate, and is larger than the chip size of the LED chip. The submount member is mounted on a metal plate via a submount member that is thermally coupled to the submount member, and the submount member side electrode is connected to one bonding wire via a conductor pattern provided on the submount member and the submount. The electrode on the side opposite to the member side is directly connected to the other bonding wire, and the sealing portion is formed of a silicone resin and is excited by light emitted from the LED chip and has a color different from that of the LED chip. A light-emitting device comprising a phosphor that emits light and having a convex lens shape.
JP2005272872A 2005-09-20 2005-09-20 Light-emitting device Withdrawn JP2007088095A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014082527A (en) * 2009-06-23 2014-05-08 Koito Mfg Co Ltd Light-emitting module
JP2019195104A (en) * 2012-05-09 2019-11-07 ローム株式会社 Light-emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014082527A (en) * 2009-06-23 2014-05-08 Koito Mfg Co Ltd Light-emitting module
JP2019195104A (en) * 2012-05-09 2019-11-07 ローム株式会社 Light-emitting device

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