JP2007035727A - Vapor phase deposition apparatus and vapor phase deposition method using same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor phase deposition apparatus for easily controlling the vapor phase reaction having large influence on the quality of the deposition and also provide a vapor phase deposition method using the same. <P>SOLUTION: The vapor phase deposition apparatus 21 includes a reactor 22, a reaction pipe 23, a susceptor 27 for placing a substrate 26 to be processed, and a heater 33 for heating the substrate 26 through the susceptor 27. The heater 33 is provided to be movable in the direction parallel to the direction in which the raw material gas flows, and this heater 33 is moved as required in the up-stream or down-stream direction. Therefore, the vapor phase reaction can be controlled. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a vapor phase growth apparatus and a vapor phase growth method using the same.

As a method of manufacturing a semiconductor device such as a light emitting diode (LED) or a semiconductor laser, a group III organometallic gas such as trimethylgallium (TMG), trimethylaluminum (TMA), trimethylindium (TMI), ammonia (NH ₃ ), phosphine, A metal organic chemical vapor deposition (hereinafter referred to as “MOCVD”) method is used in which a compound semiconductor thin film is formed using a hydrogen compound such as arsine and silane as a raw material.

  In the MOCVD method, the above-described source gas is introduced into a reaction furnace, mixed, and subjected to a thermochemical reaction on the substrate to be processed, thereby forming a thin film on the substrate to be processed. As one of thin film growth apparatuses using the MOCVD method, there is a horizontal MOCVD apparatus.

  A horizontal MOCVD apparatus introduces a raw material in a horizontal direction to a substrate to be processed placed in a reaction tube through which a source gas flows, and forms a film by reacting on the substrate to be processed. Therefore, since the flow of the source gas becomes a laminar flow along the surface of the substrate to be processed, the horizontal MOCVD apparatus is generally widely used (for example, Patent Document 1 (Japanese Patent Laid-Open No. 2001-2001)). 185488))).

  FIG. 10 is a longitudinal sectional view showing the structure of a conventional typical horizontal MOCVD apparatus. In a conventional horizontal MOCVD apparatus 1, a cylindrical reaction tube 3 extending in the horizontal direction is provided in a reaction furnace 2. The reaction tube 3 opens at one end facing the outside of the reaction furnace 2, and constitutes a gas inlet 4 through which a raw material gas containing a film forming raw material component is introduced into the reaction tube 3. Further, the other end of the reaction tube 3 opens to the outside of the reaction furnace 2 and constitutes a gas exhaust port 5 through which a raw material gas containing a film forming raw material component is discharged out of the reaction tube 3.

  A susceptor 7 on which the substrate 6 to be processed is placed is provided at a substantially central portion in the longitudinal direction of the reaction tube 3. A heater 8 for heating the substrate 6 to be processed is provided below the susceptor 7. When forming a film on the surface of the substrate 6 to be processed, a source gas is introduced into the reaction tube 3 from the gas inlet 4 in the direction indicated by the arrow 9. And the to-be-processed substrate 6 is heated with the heater 8 provided in the lower part of the susceptor 7, a film-forming chemical reaction is accelerated | stimulated, and a thin film is formed on the to-be-processed substrate 6. FIG.

  The source gas used for forming the thin film and having passed over the substrate 6 to be processed is discharged from the gas exhaust port 5 in the direction of the arrow 10. Further, in order to improve the uniformity of the thin film, a substrate rotating mechanism 11 is provided, and the thin film is formed while rotating the substrate 6 to be processed.

  In such a conventional MOCVD apparatus 1, the source gas introduced into the reaction tube 3 during film formation is indirectly generated around the substrate 6 to be processed by the substrate 6 and the susceptor 7 heated by the heater 8. Then, the thermochemical reaction is promoted in the gas phase, and a thin film is formed on the substrate 6 to be processed. In order to improve the film formation quality, it is important to control the thermochemical reaction of the raw material gas in the gas phase, that is, the gas phase reaction. However, the gas phase reaction varies depending on the combination of source gases, and there are some cases where the gas phase reaction must be suppressed in order to improve the film formation quality.

For example TMA, TMG, when forming the AlGaN film of three gases NH _3, TMA, TMG, the three gases of NH ₃ are mixed and heated, unintended gas-phase reaction occurs gradually, The normal film formation of the AlGaN film is hindered.

In order to avoid such a phenomenon, a vapor phase growth apparatus has been proposed in which the time for flowing through the reaction furnace in a state where the raw material gases are mixed is shortened. As such a vapor phase growth apparatus, TMA, TMG, and NH ₃ are separately supplied without being mixed up to the vicinity of the substrate to be processed, and three kinds of source gases are mixed and heated in the vicinity of the substrate to be processed. (See, for example, Patent Document 2 (Japanese Patent Laid-Open No. 8-139034)) and a heater for heating the substrate to be processed, as well as a preheating heater for controlling the gas phase temperature upstream of the substrate to be processed A thing (for example, refer patent document 3 (Unexamined-Japanese-Patent No. 11-74202)) etc. is proposed.
JP 2001-185488 A JP-A-8-139034 JP-A-11-74202

  In order to improve the film formation quality in this way, the issue is how to control the chemical reaction at the gas phase and the substrate surface, that is, how to control the concentration, temperature and reaction time of the material that dominates the chemical reaction. Become.

  However, in the method of suppressing the gas phase reaction time from mixing to film formation by separating and supplying the source gas as in the vapor phase growth apparatus described in Patent Document 2 described above, in order to separate the source gas, A partition plate for partitioning the road is required. When the source gas is mixed on the downstream side of the end of the partition plate, the flow of the source gas is disturbed. Thereby, the film formation quality may be deteriorated.

Further, in order to minimize the disturbance, it is necessary to match the flow rates of the respective raw material gases before the merging. For this purpose, the flow rate of the source gas is adjusted by the flow rate of the carrier gas that does not directly contribute to the film formation of H ₂ or N ₂ . For this reason, the flow rate of the carrier gas must be adjusted each time the ratio of the group III organometallic gas to the group V gas (V / III ratio) is adjusted. As a result, the concentration of the raw material gas in the reaction tube changes, making it difficult to specify the gas phase reaction phenomenon, and it is difficult to optimize the film forming conditions and requires time.

  Moreover, in the vapor phase growth apparatus in which a preheating heater for controlling the vapor phase temperature upstream of the substrate to be processed is provided in addition to the heater for heating the substrate to be processed as in Patent Document 3 described above, each heater is provided with a heater. Since a heating mechanism, a heater electrode, a radiant heat reflecting plate (reflector) for increasing the heating efficiency, and the like are required, the heating apparatus including the heater becomes very large as a whole. Therefore, a gap is generated between both heaters, and it is difficult to continuously increase the gas phase temperature.

  In addition, if an attempt is made to add a substrate substrate rotation mechanism in order to improve the uniformity in film formation, the vapor phase growth apparatus becomes more complicated and large, which is not practical.

  The present invention has been made to solve the above-described problems, and provides a vapor phase growth apparatus and a vapor phase growth method capable of easily controlling a vapor phase reaction that greatly affects film formation quality. is there.

  According to the vapor phase growth apparatus based on this invention, the source gas containing the film forming raw material component is introduced into the reaction tube in which the substrate to be processed is arranged, and is along the surface on which the substrate to be processed is formed. A vapor phase growth apparatus for causing the raw material gas to flow in a direction and reacting with the substrate to be processed by heating the raw material gas to grow the film forming raw material component on the substrate to be processed. A heating element for heating the substrate is provided, and the heating element is provided so that its position can be adjusted in a direction parallel to the direction in which the source gas flows.

  According to one aspect of the vapor phase growth method based on the present invention, the vapor phase growth method using the vapor phase growth apparatus described above, wherein the heating element is used as the raw material during the film forming process of the substrate to be processed. A step of moving in a direction parallel to the direction in which the gas flows is included.

  According to another aspect of the vapor phase growth method based on the present invention, there is provided a vapor phase growth method using the vapor phase growth apparatus, wherein the heating element is accompanied with a step of changing a flow rate of the source gas. Is moved in a direction parallel to the direction in which the source gas flows.

  According to another aspect of the vapor phase growth method according to the present invention, a vapor phase growth method using the vapor phase growth apparatus, wherein the heating element is accompanied with a step of changing a type of the source gas. Is moved in a direction parallel to the direction in which the source gas flows.

  According to another aspect of the vapor phase growth method according to the present invention, a vapor phase growth method using the vapor phase growth apparatus described above, wherein the heating element is moved in a direction parallel to a direction in which the source gas flows. Thus, there is a step of changing the temperature distribution between the upstream side and the downstream side in the vicinity of the substrate to be processed inside the reaction tube.

  According to the vapor phase growth apparatus and the vapor phase growth method using the same according to the present invention, it is possible to easily control the vapor phase reaction.

  Hereinafter, a vapor phase growth apparatus and a vapor phase growth method using the same in each embodiment based on the present invention will be described with reference to the drawings. In each embodiment, the same or corresponding parts are denoted by the same reference numerals, and redundant description will not be repeated.

(Embodiment 1)
Hereinafter, a first embodiment according to the present invention will be described with reference to FIGS. FIG. 1 is a longitudinal sectional view showing a simplified structure of the vapor phase growth apparatus according to the present embodiment.

  The vapor phase growth apparatus 21 of the present embodiment includes a reaction furnace 22, a reaction tube 23, a susceptor 27 on which a substrate 26 to be processed is placed, rotating mechanisms 28 to 31 for holding and rotating the susceptor 27, A heater 33 provided below the susceptor 27 and driving means 34 and 35 for holding the heater 33 and moving it parallel to the gas flow are provided.

  A source gas used for vapor phase growth is introduced into the reaction tube 23 in the direction of arrow 37 from the gas inlet 24. The introduced source gas is heated by the reaction tube 23, the susceptor 27, the substrate to be processed 26, etc. heated by the heater 33, and forms a thin film on the substrate to be processed 26 through a gas phase reaction. The raw material gas that has not been used for film formation is discharged from the gas discharge port 25 in the direction of the arrow 38. Examples of such a vapor phase growth apparatus 21 include a semiconductor processing apparatus that performs a thin film forming process on a semiconductor substrate.

  The reaction furnace 22 is a casing having a rectangular parallelepiped shape, and is formed by lining a refractory or the like on a metal shell, for example. A reaction tube 23 is attached so as to extend over the opposite side portions of the reaction furnace 22 at both ends in the left-right direction in FIG. The reaction tube 23 has a cylindrical or substantially rectangular tube shape and is made of a heat-resistant material, for example, a ceramic such as quartz, boron nitride or silicon carbide, or a metal such as molybdenum.

  The susceptor 27 has a substantially circular shape in plan view when it includes a substrate rotation mechanism, but this is not the case when it does not have a substrate rotation mechanism. For the susceptor 27, similarly to the reaction tube 23, a heat-resistant material, for example, a ceramic such as quartz, boron nitride or silicon carbide, or a metal such as molybdenum is used.

  To the gas inlet 24 of the reaction tube 23, a gas supply source such as a high-pressure gas cylinder, a pressure / flow rate adjusting valve connected to the gas supply source, and a gas supply tube connected to the gas supply source and the reaction tube 23 are not shown. The raw material gas is supplied by a gas supply device including a path.

  An opening larger than the dimension of the susceptor 27 is formed in a substantially central lower portion of the reaction tube 23. The susceptor 27 is inserted into the opening, and the surface of the susceptor 27 and the bottom surface of the reaction tube 23 are located in substantially the same plane.

  The susceptor 27 is held by, for example, rotating mechanisms 28 to 31 and is rotatable. A substrate rotating shaft 28 holding a susceptor 27 having a flange extending in the horizontal direction at the upper end of the cylindrical main body. A substrate rotation gear 29 is attached to the outer periphery of the lower portion of the substrate rotation shaft 28. A substrate rotation motor gear 30 is provided so as to engage with the substrate rotation gear 29, and the substrate rotation motor gear 30 is rotationally driven by a substrate rotation motor 31.

  The heater 33 is composed of, for example, a resistance heating element. The heater 33 is held by a movable shaft 34 extending in the vertical direction. The movable shaft 34 is disposed on the movable rail 35. The movable rail 35 can move along the direction of the flow of the source gas supplied into the reaction tube 23. The heater 33 is arranged in the internal space of the susceptor 27, and the movable shaft 34 is arranged so as to reach the internal space of the substrate rotation shaft 28 from the inside of the susceptor 27. The movable shaft 34 and the heater 33 held by the movable rail 35 are configured to move electrically by a combination of a known motor and gear. Also, the operator may manually adjust the position when setting the vapor phase growth apparatus.

  The heater 33 generates heat when power is supplied from a power source (not shown). By supplying electric power to the heater 33 to generate heat and rotating the susceptor 27, the susceptor 27 is heated while rotating. Further, the substrate to be processed 26 placed on the susceptor 27 is also heated while rotating in the reaction tube 23.

  Hereinafter, a procedure for forming a thin film on the substrate to be processed 26 will be described. First, the source gas is introduced into the reaction tube 23 from the gas inlet 24. The introduced source gas is heated by the radiant heat radiated from the reaction tube 23 and the susceptor 27 heated by the heated heater 33 and the heat conduction therefrom.

  The heated source gas reaches the vicinity of the substrate to be processed 26 while undergoing a gas phase reaction, and forms a thin film on the surface of the substrate to be processed 26 by a surface reaction.

Here, the gas phase reaction varies depending on the raw material gas used or the desired film composition as described above. For example, when an AlGaN film is formed using TMG, TMA, and NH ₃ as source gases, the gas phase reaction before reaching the substrate to be processed 26 should be suppressed. As described above, in the case of film formation in which it is desired to suppress the gas phase reaction, the heater 33 is moved downstream.

Conversely, for example, when a GaN film is formed using TMG and NH ₃ as a source gas, the progress of the gas phase reaction does not significantly affect the deterioration of the film formation quality. Therefore, by moving the heater 33 to the upstream side and sufficiently heating the source gas in advance, the film formation quality can be improved for the reasons described later.

  First, when the temperature of the source gas rises, the source gas expands, but the volume of the reaction tube 23 does not change. As a result, the flow velocity of the source gas is increased, and as a result, the thickness of the gas boundary layer is reduced, the amount of diffusion of the source gas into the substrate 26 is increased, and the film formation rate can be increased.

  Secondly, the fact that the temperature of the source gas can be raised in advance means that the temperature of the source gas is sufficiently raised before reaching the substrate to be processed 26. As a result, it is possible to reduce the amount by which the temperature of the substrate 26 itself is lowered by being exposed to a low temperature source gas. Furthermore, since the temperature difference between the temperature of the upstream substrate surface and the downstream substrate surface temperature with respect to the flow direction of the source gas is small, the temperature uniformity of the substrate to be processed during film formation is reduced. The film formation quality is improved.

  By moving the position of the heater 33 in this way, it is possible to control the amount of gas phase reaction according to the type of source gas and desired film characteristics (composition ratio), and the film formation quality on the substrate 26 to be processed can be improved. Can be improved.

  Further, when the flow rate of the source gas is changed, the temperatures of the substrate 26 and the susceptor 27 that are in contact with the source gas also change. By controlling the position of the heater 33 in response to this change, a stable film formation result can be obtained. For example, when the flow rate of the source gas is increased, the amount of heat taken away from the substrate to be processed 26 and the susceptor 27 increases, the surface temperature decreases, and the temperature of the source gas also decreases. At this time, if the heater 33 is moved upstream, the gas phase reaction can be promoted to the same extent as before the increase in the raw material gas flow rate.

  Even when the type and mixing ratio of the source gas to be supplied are changed, the movement of the heater can be applied to control the temperature change of the source gas caused by the difference in thermal conductivity depending on the type of source gas.

  Further, when it is desired to change the temperature distribution in the vicinity of the substrate to be processed 26, it is effective to move the heater 33 by the apparatus of the present embodiment. When it is desired to lower the temperature of the substrate 26 to be processed, the heater is moved to the downstream side, and when it is desired to increase the temperature of the substrate 26 to be processed, the heater is moved to the upstream side. Thereby, the temperature of the source gas flowing from the upstream side, which greatly affects the temperature change of the substrate 26 to be processed, can be adjusted.

  That is, when it is desired to lower the temperature of the substrate 26 to be processed, if the heater 33 is installed on the downstream side, the temperature on the upstream side of the susceptor 27 decreases and the temperature of the source gas does not increase. The cooling of the substrate 26 to be processed is promoted. Conversely, when it is desired to increase the temperature of the substrate to be processed, the temperature of the upstream side of the susceptor 27 increases and the temperature of the source gas also increases by moving the heater 33 upstream. As a result, the gas that reaches the substrate 26 to be processed The temperature also rises, and the temperature of the substrate to be processed 26 is more likely to rise than when the heater 33 is on the downstream side. As described above, it is effective that the heater 33 is movable even when the temperature of the substrate to be processed 26 is changed. Note that the movement of the heater 33 may be performed during the processing of the substrate 26 to be processed.

  A change in temperature distribution due to the movement of the heater 33 was evaluated by a thermal fluid simulation. The calculation model used for the simulation is shown in FIG. In order to reduce the calculation load, the calculation model is simplified as long as the temperature distribution in the vicinity of the substrate to be processed is not greatly affected. The reaction furnace 22 was set as the end of the calculation region, and a boundary condition of a constant temperature (here, 323 K) was given thereto.

  A reaction tube 23 is disposed so as to cross the reaction furnace 22. A gas introduction port 24 for introducing a raw material gas in the direction of an arrow 37 at both ends of the reaction tube 23, and a gas introduced from the gas introduction port 24 are indicated by arrows 38. Gas outlets 25 for discharging in the direction of, respectively, a susceptor 27 for disposing the substrate 26 to be processed on one side (here, the lower side) of the reaction tube 23, and a heater for heating them. 33 is provided.

The source gas introduced from the gas inlet 24 is N ₂ gas, the flow rate of the source gas is 1 m / s, and the heat generation density of the heater 33 is 20 MW / m ³ . Further, the susceptor 27 is provided with a recess for placing the substrate 26 to be processed, and is configured such that the surface to be processed of the substrate 26 to be processed and the surface of the susceptor are in the same plane.

  The diameter of the substrate 26 to be processed is 50 mm, the diameter of the susceptor 27 is 100 mm, the diameter of the heater 33 is 65 mm, and the center of the substrate to be processed 26 and the center of the heater 33 are ± 7.5 mm in the direction in which the source gas flows. A thermal fluid simulation was performed when the displacement occurred.

  The temperature distribution results on the surface of the substrate 26 and the susceptor 27 are as shown in FIG. The unit of the horizontal axis in the figure is millimeter (mm), the origin is the center of the substrate 26, the vertical axis is temperature, and the unit is Kelvin (K). In FIG. 3, the line indicated as upstream indicates a case where the heater 33 is moved by 7.5 mm to the upstream side, and the circled line indicated as downstream indicates that the heater 33 is set to 7 downstream. It shows the case of moving 5 mm.

  In the range 62 of about 50 mm in the center, the temperature is about 873 K, and a substantially constant temperature distribution is obtained. On the upstream side 61 (horizontal axis minus side in the figure) of the substrate to be processed 26 of the susceptor 27, when the heater 33 is moved downstream, it is lower by about 100K than when it is moved upstream. became. When the heater 33 is moved to the downstream side, the temperature on the downstream side 63 (the horizontal axis plus side in the figure) of the susceptor 27 becomes higher, but the temperature change on the downstream side of the substrate 26 to be processed changes to the substrate 26 to be processed. Does not affect film formation.

  From this result, by moving the heater 33, the temperature distribution of the susceptor 27 on the upstream side of the substrate to be processed can be changed without changing the temperature distribution of the substrate to be processed 26, and the gas phase reaction can be controlled. Was confirmed.

  In the examples described so far, for example, the heater 33 that generates heat due to electric resistance is moved. However, in the case of the induction heating method as shown in FIG. 4, the heat generated by heating by the high frequency induction coil 39. The same effect can be obtained by moving the body 40.

  In the above description, the vapor phase growth apparatus that processes the substrate to be processed 26 one by one has been described. However, the same effect can be expected in a vapor phase growth apparatus that simultaneously processes a plurality of substrates. Such a case will be described in the next embodiment.

(Embodiment 2)
The second embodiment will be described with reference to FIGS. FIG. 5 is a perspective view showing the structure of the reaction tube of the vapor phase growth apparatus according to the present embodiment.

  As shown in FIG. 5, the present embodiment is a vapor phase growth apparatus that can simultaneously process a plurality of substrates to be processed 26 arranged circumferentially at the bottom of a reaction tube 23. Each substrate 26 is partitioned by a wedge-shaped partition member 41 in plan view. Thereby, the width W of the flow path of the source gas from the central portion of the reaction tube 23 to the gas discharge port 25 via the substrate to be processed 26 is kept constant from upstream to downstream. The source gas is supplied to the central portion, spreads radially and reacts with each substrate 26 to be processed. However, since the width W of the source gas channel is constant, a uniform thin film is formed on the surface of the substrate 26 to be processed. be able to.

  FIG. 6 is a longitudinal sectional view of the vapor phase growth apparatus according to the present embodiment. As shown in FIG. 6, each substrate to be processed 26 is held by a susceptor 27, and a heater 33 is provided therein so as to be movable in the radial direction of the reaction tube 23. The heater 33 is connected to the rack gear 43 via the movable shaft 34.

  The rack gear 43 meshes with the upper small gear 44, and moves horizontally along the direction in which the source gas flows by rotating the upper small gear 44 (see FIGS. 7 and 8). Below the upper small gear 44, a lower small gear 45 directly connected coaxially with the upper small gear 44 is provided. The lower small gear 45 meshes with the large gear 46, and the lower small gear 45 is rotationally driven by rotating the large gear 46 (see FIG. 9).

  When the heater 33 is moved, by rotating the large gear 46, all the lower small gears 45 are rotationally driven. At the same time, the upper small gear 44 directly connected to the lower small gear 45 is also rotationally driven. As the upper small gear 44 is driven to rotate, the rack gear 43 moves in a horizontal direction parallel to the direction in which the source gas flows. Thereby, the movable shaft 34 and the heater 33 held by the rack gear 43 are driven.

  As described above, in the vapor phase growth apparatus that processes a plurality of substrates to be processed 26, it is necessary to move the plurality of heaters 33, respectively. The position of the heater 33 can be easily adjusted. Further, the heater 33 can be moved even during the film forming process of the substrate 26 to be processed.

  In this embodiment, the case where all the heaters 33 are moved simultaneously by providing the moving mechanism as described above has been described. However, the position of each heater 33 is manually adjusted when the vapor phase growth apparatus 21 is set. You may make it do.

  In addition, the said embodiment disclosed this time is an illustration in all the points, Comprising: It does not become the basis of limited interpretation. Therefore, the technical scope of the present invention is not interpreted only by the above-described embodiments, but is defined based on the description of the claims. Further, all modifications within the meaning and scope equivalent to the scope of the claims are included.

It is a longitudinal cross-sectional view which simplifies and shows the structure of the vapor phase growth apparatus in Embodiment 1 based on this invention. It is a longitudinal cross-sectional view which shows the structure of the vapor phase growth apparatus of the calculation model used for simulation. It is a figure which shows the calculation result of temperature distribution. It is a longitudinal cross-sectional view which simplifies and shows the structure of the vapor phase growth apparatus in the modification of Embodiment 1 based on this invention. It is a perspective view which simplifies and shows the internal structure of the vapor phase growth apparatus in Embodiment 2 based on this invention. It is a longitudinal cross-sectional view which simplifies and shows the structure of the vapor phase growth apparatus in Embodiment 2 based on this invention. It is a longitudinal cross-sectional view which simplifies and shows the structure of the vapor phase growth apparatus in Embodiment 2 based on this invention. It is a top view which shows the relationship between a top small gear and a rack gear of the vapor phase growth apparatus in Embodiment 2 based on this invention. It is a top view which shows the relationship between a lower small gear and a large gear of the vapor phase growth apparatus in Embodiment 2 based on this invention. It is a longitudinal cross-sectional view which shows the structure of the vapor phase growth apparatus in a prior art.

Explanation of symbols

  21 Vapor Deposition Equipment, 22 Reactor, 23 Reaction Tube, 24 Gas Inlet, 25 Gas Outlet, 26 Substrate, 27 Susceptor, 28 Substrate Rotating Shaft, 29 Substrate Rotating Gear, 30 Substrate Rotating Motor Gear, 31 Substrate Rotating Motor, 33 heater, 34 movable shaft, 35 movable rail, 39 high frequency induction coil, 40 heating element.

Claims (6)

A raw material gas containing a film forming raw material component is introduced into a reaction tube in which a substrate to be processed is arranged, and the raw material gas is flowed in a direction along a surface on which the substrate to be processed is formed. A vapor phase growth apparatus that reacts with the substrate to be processed by being heated and grows the film forming raw material component on the substrate to be processed;
A vapor phase growth apparatus comprising a heating element for heating the substrate to be processed, wherein the heating element is provided so that its position can be adjusted in a direction parallel to a direction in which the source gas flows.   The vapor phase growth apparatus according to claim 1, further comprising a rotation mechanism that rotates the substrate to be processed, wherein the rotation mechanism rotates the substrate to be processed independently of the heating element. A vapor phase growth method using the vapor phase growth apparatus according to claim 1 or 2,
A vapor phase growth method including a step of moving the heating element in a direction parallel to a direction in which the source gas flows during a film forming process of the substrate to be processed. A vapor phase growth method using the vapor phase growth apparatus according to claim 1 or 2,
Changing the flow rate of the raw material gas introduced into the reaction tube;
And a step of moving the heating element in a direction parallel to a direction in which the source gas flows in accordance with a step of changing a flow rate of the source gas. A vapor phase growth method using the vapor phase growth apparatus according to claim 1 or 2,
Changing the type of source gas introduced into the reaction tube;
And a step of moving the heating element in a direction parallel to a direction in which the source gas flows in accordance with the step of changing the type of the source gas. A vapor phase growth method using the vapor phase growth apparatus according to claim 1 or 2,
Including a step of changing a temperature distribution between an upstream side and a downstream side in the vicinity of the substrate to be processed inside the reaction tube by moving the heating element in a direction parallel to a direction in which the source gas flows. Growth method.

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