JP2006342138A - Niobium 2-ethylhexanoate derivative and its preparation method - Google Patents
Niobium 2-ethylhexanoate derivative and its preparation method Download PDFInfo
- Publication number
- JP2006342138A JP2006342138A JP2005171441A JP2005171441A JP2006342138A JP 2006342138 A JP2006342138 A JP 2006342138A JP 2005171441 A JP2005171441 A JP 2005171441A JP 2005171441 A JP2005171441 A JP 2005171441A JP 2006342138 A JP2006342138 A JP 2006342138A
- Authority
- JP
- Japan
- Prior art keywords
- niobium
- ethylhexanoic acid
- derivative
- mass
- pentakis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- CYWDDBNPXTUVNN-UHFFFAOYSA-I 2-ethylhexanoate;niobium(5+) Chemical class [Nb+5].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O CYWDDBNPXTUVNN-UHFFFAOYSA-I 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title abstract 2
- 239000010955 niobium Substances 0.000 claims abstract description 64
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 51
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 44
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical group CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 claims abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 14
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 13
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 4
- JGUAIAMPONKRLK-UHFFFAOYSA-N 2-ethylhexanoic acid;niobium Chemical class [Nb].CCCCC(CC)C(O)=O JGUAIAMPONKRLK-UHFFFAOYSA-N 0.000 claims description 19
- 125000003545 alkoxy group Chemical group 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 15
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 claims description 12
- 239000012024 dehydrating agents Substances 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000002243 precursor Substances 0.000 abstract description 21
- 238000000034 method Methods 0.000 abstract description 19
- 229910052751 metal Inorganic materials 0.000 abstract description 17
- 239000002184 metal Substances 0.000 abstract description 17
- 230000008021 deposition Effects 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 description 19
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 15
- -1 alkoxide compound Chemical class 0.000 description 14
- 239000002904 solvent Substances 0.000 description 11
- 239000007788 liquid Substances 0.000 description 9
- 150000007524 organic acids Chemical class 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 239000003960 organic solvent Substances 0.000 description 8
- 238000002156 mixing Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- ZTILUDNICMILKJ-UHFFFAOYSA-N niobium(v) ethoxide Chemical compound CCO[Nb](OCC)(OCC)(OCC)OCC ZTILUDNICMILKJ-UHFFFAOYSA-N 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000921 elemental analysis Methods 0.000 description 4
- 238000005160 1H NMR spectroscopy Methods 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 150000004703 alkoxides Chemical class 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- DINQVNXOZUORJS-UHFFFAOYSA-N butan-1-olate;niobium(5+) Chemical compound [Nb+5].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] DINQVNXOZUORJS-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- CGAFRZVAXRQUEI-UHFFFAOYSA-N niobium(5+);propan-1-olate Chemical compound [Nb+5].CCC[O-].CCC[O-].CCC[O-].CCC[O-].CCC[O-] CGAFRZVAXRQUEI-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000001644 13C nuclear magnetic resonance spectroscopy Methods 0.000 description 2
- UZNIWDOJDILPDK-UHFFFAOYSA-I 2-ethylbutanoate niobium(5+) Chemical compound [Nb+5].CCC(CC)C([O-])=O.CCC(CC)C([O-])=O.CCC(CC)C([O-])=O.CCC(CC)C([O-])=O.CCC(CC)C([O-])=O UZNIWDOJDILPDK-UHFFFAOYSA-I 0.000 description 2
- QEGJAKHHUQEOMO-UHFFFAOYSA-N 2-methoxyethanolate niobium(5+) Chemical compound [Nb+5].COCC[O-].COCC[O-].COCC[O-].COCC[O-].COCC[O-] QEGJAKHHUQEOMO-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- DJYIQXACAUOXLH-UHFFFAOYSA-I [Nb+5].CCCCCC([O-])=O.CCCCCC([O-])=O.CCCCCC([O-])=O.CCCCCC([O-])=O.CCCCCC([O-])=O Chemical compound [Nb+5].CCCCCC([O-])=O.CCCCCC([O-])=O.CCCCCC([O-])=O.CCCCCC([O-])=O.CCCCCC([O-])=O DJYIQXACAUOXLH-UHFFFAOYSA-I 0.000 description 2
- 230000009102 absorption Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002822 niobium compounds Chemical class 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- PYOKUURKVVELLB-UHFFFAOYSA-N trimethyl orthoformate Chemical compound COC(OC)OC PYOKUURKVVELLB-UHFFFAOYSA-N 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- NGCRLFIYVFOUMZ-UHFFFAOYSA-N 2,3-dichloroquinoxaline-6-carbonyl chloride Chemical compound N1=C(Cl)C(Cl)=NC2=CC(C(=O)Cl)=CC=C21 NGCRLFIYVFOUMZ-UHFFFAOYSA-N 0.000 description 1
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical compound ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 1
- AYKYXWQEBUNJCN-UHFFFAOYSA-N 3-methylfuran-2,5-dione Chemical compound CC1=CC(=O)OC1=O AYKYXWQEBUNJCN-UHFFFAOYSA-N 0.000 description 1
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- HEYBEKUMPHQYOQ-UHFFFAOYSA-I C(CCCC)(=O)[O-].[Nb+5].C(CCCC)(=O)[O-].C(CCCC)(=O)[O-].C(CCCC)(=O)[O-].C(CCCC)(=O)[O-] Chemical compound C(CCCC)(=O)[O-].[Nb+5].C(CCCC)(=O)[O-].C(CCCC)(=O)[O-].C(CCCC)(=O)[O-].C(CCCC)(=O)[O-] HEYBEKUMPHQYOQ-UHFFFAOYSA-I 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YXAGIRHBJJLWHW-UHFFFAOYSA-N Ethyl 2-ethylhexanoate Chemical compound CCCCC(CC)C(=O)OCC YXAGIRHBJJLWHW-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- YRJLCOLNAYSNGB-UHFFFAOYSA-N [Nb].[Bi] Chemical compound [Nb].[Bi] YRJLCOLNAYSNGB-UHFFFAOYSA-N 0.000 description 1
- KPYKIKAOXJKNGG-UHFFFAOYSA-N [Nb].[Bi].[Sr] Chemical compound [Nb].[Bi].[Sr] KPYKIKAOXJKNGG-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000001246 colloidal dispersion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 238000010908 decantation Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- KKHUSADXXDNRPW-UHFFFAOYSA-N malonic anhydride Chemical compound O=C1CC(=O)O1 KKHUSADXXDNRPW-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- IJCCNPITMWRYRC-UHFFFAOYSA-N methanolate;niobium(5+) Chemical compound [Nb+5].[O-]C.[O-]C.[O-]C.[O-]C.[O-]C IJCCNPITMWRYRC-UHFFFAOYSA-N 0.000 description 1
- VUWVDWMFBFJOCE-UHFFFAOYSA-N niobium(5+);oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Ta+5] VUWVDWMFBFJOCE-UHFFFAOYSA-N 0.000 description 1
- LZRGWUCHXWALGY-UHFFFAOYSA-N niobium(5+);propan-2-olate Chemical compound [Nb+5].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-] LZRGWUCHXWALGY-UHFFFAOYSA-N 0.000 description 1
- FGHSTPNOXKDLKU-UHFFFAOYSA-N nitric acid;hydrate Chemical compound O.O[N+]([O-])=O FGHSTPNOXKDLKU-UHFFFAOYSA-N 0.000 description 1
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- HSXKFDGTKKAEHL-UHFFFAOYSA-N tantalum(v) ethoxide Chemical compound [Ta+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] HSXKFDGTKKAEHL-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- GKASDNZWUGIAMG-UHFFFAOYSA-N triethyl orthoformate Chemical compound CCOC(OCC)OCC GKASDNZWUGIAMG-UHFFFAOYSA-N 0.000 description 1
- 229940070710 valerate Drugs 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
Images
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
Description
本発明は、特定の構造を有する2−エチルヘキサン酸ニオブ誘導体及びその製造方法に関する。 The present invention relates to a niobium 2-ethylhexanoate derivative having a specific structure and a method for producing the same.
ニオブ元素を含有するセラミック薄膜は、特異的な電気特性を有するため、様々な用途への応用が検討されている。特に、優れた誘電特性の特徴を応用した高誘電体キャパシタ、強誘電体キャパシタ、ゲート絶縁膜、バリア膜、圧電素子等の電子部品の電子部材に用いられている。例えば、非特許文献1には、チタン酸ジルコン酸鉛のチタンサイトの一部をニオブに置換したニオブ添加チタン酸ジルコン酸鉛(PNZT)薄膜が報告されている。 A ceramic thin film containing a niobium element has specific electrical characteristics, and therefore, its application to various uses is being studied. In particular, it is used for electronic members of electronic parts such as high dielectric capacitors, ferroelectric capacitors, gate insulating films, barrier films, piezoelectric elements, etc., which have applied the characteristics of excellent dielectric properties. For example, Non-Patent Document 1 reports a niobium-doped lead zirconate titanate (PNZT) thin film in which a portion of the titanium site of lead zirconate titanate is replaced with niobium.
上述のような薄膜の製造法としては、塗布熱分解法やゾルゲル法等のMOD(Metal Organic Deposition)法、CVD(Chemical Vapour Deposition)法、ALD(Atomic Layer Deposition)法等が挙げられる。比較的加工精度の低い薄膜については、製造コストが小さく、薄膜形成が容易なMOD法が好適な方法である。MOD法に用いられる薄膜のプレカーサは、主にアルコシド化合物、有機酸金属塩が使用されており、ニオブプレカーサについても同様である。 Examples of the method for producing the thin film include a MOD (Metal Organic Deposition) method such as a coating pyrolysis method and a sol-gel method, a CVD (Chemical Vapor Deposition) method, an ALD (Atomic Layer Deposition) method, and the like. For a thin film with relatively low processing accuracy, the MOD method is preferable because the manufacturing cost is low and the thin film can be easily formed. Thin film precursors used in the MOD method mainly use an alkoxide compound and an organic acid metal salt, and the same applies to niobium precursors.
また、特許文献1には、溶液中の金属組成比(モル比)がA:B:C=X:Y:Zで表され(ただし、AはSrとBa及び/又はPb、BはBi、CはTa及び/又はNbを示す。)、0.4≦X≦1.0、1.5≦Y≦3.5、Z=2であり、Sr:Ba:Pb=a:b:cで表したときに、0.7X≦a<X、0<b+c≦0.3Xとなるように有機溶媒中に金属化合物を混合してなるBi系強誘電体薄膜形成用組成物(請求項1)が開示されている。また、特許文献1の[0023]段落には、ニオブ化合物として、ニオブエトキシド、ニオブプロポキシド、ニオブブトキシド、ニオブ−2−メトキシエトキシド等のアルコキシドや、オクチル酸ニオブ、n−ヘキサン酸ニオブ、2−エチル酪酸ニオブ、i−吉草酸ニオブ等のカルボン酸等が例示されている。 In Patent Document 1, the metal composition ratio (molar ratio) in the solution is represented by A: B: C = X: Y: Z (where A is Sr and Ba and / or Pb, B is Bi, C represents Ta and / or Nb), 0.4 ≦ X ≦ 1.0, 1.5 ≦ Y ≦ 3.5, Z = 2, and Sr: Ba: Pb = a: b: c. A composition for forming a Bi-based ferroelectric thin film obtained by mixing a metal compound in an organic solvent such that 0.7X ≦ a <X and 0 <b + c ≦ 0.3X when expressed (Claim 1) Is disclosed. [0023] In paragraph [0023] of Patent Document 1, as a niobium compound, an alkoxide such as niobium ethoxide, niobium propoxide, niobium butoxide, niobium-2-methoxyethoxide, niobium octylate, niobium n-hexanoate, Examples include carboxylic acids such as niobium 2-ethylbutyrate and niobium i-valerate.
更に、特許文献2には、組成がBi2(TamNb1−m)2O8(ただし、0≦m≦1)で表される、厚さ5〜50nmの下地層と、該下地層上に形成された、組成が(SrxBi1−x)Bi2(TaYNb1−Y)2Oz(ただし、0.4≦X≦1、0≦Y≦1、Zは各金属元素に付随した酸素の数の合計)で表される主層とを備えてなるBi系強誘電体薄膜(請求項1)及び組成がBi2(TamNb1−m)2O8(ただし、0≦m≦1)で表される、厚さ5〜50nmの下地層と、該下地層上に形成された、組成が[{Srx(Pb及び/又はBan}XBi1−X]Bi2(TaYNb1−Y)2Oz(ただし、0<n≦0.3、0.4≦X≦1、0≦Y≦1、Zは各金属元素に付随した酸素の数の合計)で表される主層とを備えてなるBi系強誘電体薄膜(請求項2)が開示されている。また、特許文献2の[0025]段落には、ニオブ化合物として、ニオブエトキシド、ニオブプロポキシド、ニオブブトキシド、ニオブ−2−メトキシエトキシド等のアルコキシドや、オクチル酸ニオブ、n−ヘキサン酸ニオブ、2−エチル酪酸ニオブ、i−吉草酸ニオブ等のカルボン酸塩が例示されている。 Furthermore, Patent Document 2 discloses an underlayer having a composition of Bi 2 (Ta m Nb 1-m ) 2 O 8 (where 0 ≦ m ≦ 1) and a thickness of 5 to 50 nm, and the underlayer formed thereon, composition (Sr x Bi 1-x) Bi 2 (Ta Y Nb 1-Y) 2 O z ( however, 0.4 ≦ X ≦ 1,0 ≦ Y ≦ 1, Z is the metal Bi-based ferroelectric thin film (Claim 1) and a composition of Bi 2 (Ta m Nb 1-m ) 2 O 8 (wherein the total number of oxygen associated with the element) , 0 ≦ m ≦ 1), and an underlayer having a thickness of 5 to 50 nm and a composition formed on the underlayer [{Sr x (Pb and / or Ba n } X Bi 1-X) ] Bi 2 (Ta Y Nb 1-Y ) 2 O z (where 0 <n ≦ 0.3, 0.4 ≦ X ≦ 1, 0 ≦ Y ≦ 1, Z is associated with each metal element) A Bi-based ferroelectric thin film (Claim 2) comprising a main layer represented by the sum of the number of oxygen is disclosed in paragraph [0025] of Patent Document 2 as a niobium compound. , Alkoxides such as niobium ethoxide, niobium propoxide, niobium butoxide, niobium-2-methoxyethoxide and the like, and carboxylates such as niobium octylate, niobium n-hexanoate, niobium 2-ethylbutyrate, niobium valerate, etc. Is illustrated.
また、特許文献3には、ペロブスカイト型A−サイトモイエティー、ペロブスカイト型B−サイトモイエティー、および超格子生成モイエティーを含む複数のポリオキシアルキレート化金属モイエティーを提供する工程を包含する、電子素子を作成するための方法であって、該方法は、該各金属モイエティーを、複数の層(116、124、128)を順に有する積層化超格子材料(112)に対応する相対割合で組み合わせる工程であって、該順は、A−サイト金属、B−サイト金属、およびその混合物からなる群より選択される金属の酸化物から形成される、A/Bイオン性サブユニットセル(146)を有するA/B(124)と;超格子生成イオン性サブユニットセルを有する超格子生成層(116)と;A−サイト金属およびB−サイト金属の両方を含有するペロブスカイト型AB層(128)であって、該AB層は該A/B層の格子とは異なるペロブスカイト型酸素八面体格子を有するペロブスカイト型AB層と、を含んでいる工程と、該前駆体溶液を基板に塗布する工程と、該基板上の該前駆体溶液を処理することにより、該A/B層、該超格子生成層、および該ペロブスカイト型AB層を有する混合積層化格子材料を形成する工程と、を特徴とする方法が開示されている。また、特許文献3の47頁実施例4には、プレ前駆体溶液の原料として2−エチルヘキサン酸ニオブを使用することが記載されている。 Patent Document 3 discloses an electronic device including a step of providing a plurality of polyoxyalchelated metal moieties including perovskite type A-cytomoy, perovskite type B-cytomoy, and superlattice generating moiety. Combining each metal moiety in a relative proportion corresponding to a laminated superlattice material (112) having a plurality of layers (116, 124, 128) in sequence. Wherein the order comprises an A / B ionic subunit cell (146) formed from an oxide of a metal selected from the group consisting of A-site metal, B-site metal, and mixtures thereof. / B (124); superlattice-forming layer (116) with superlattice-forming ionic subunit cells; A-site metal and B- A perovskite type AB layer (128) containing both of theite metal, the AB layer comprising a perovskite type AB layer having a perovskite type oxygen octahedral lattice different from the lattice of the A / B layer. A step of applying the precursor solution to the substrate; and mixing the A / B layer, the superlattice generation layer, and the perovskite-type AB layer by treating the precursor solution on the substrate. Forming a laminated grid material is disclosed. Further, in Example 4 on page 47 of Patent Document 3, it is described that niobium 2-ethylhexanoate is used as a raw material for the pre-precursor solution.
上述のような有機酸ニオブは、製造方法及び製造条件により、得られる誘導体の性質、物性が大きく異なり、MOD法のプレカーサとしては扱いにくいという問題点を有していた。 The organic acid niobium as described above has a problem that it is difficult to handle as a precursor of the MOD method because the properties and physical properties of the obtained derivative vary greatly depending on the production method and production conditions.
一般に有機酸ニオブは、(RCOO)5Nbと表記される場合が多いが、炭素含有量、Nb含有量共に様々である。実際に、有機酸ニオブを形成する結合ユニットは、「RCOO−NbとNb−O−Nb」、「RCOO−NbとNb=O」または「RCOO−NbとNb−O−NbとNb=O」であり、例えば単純な構造で代表したモデルを示すと下記化学式のようになるが、実際に化学構造を正確に同定することは困難である。なお、下記化学式において、Lは有機酸残基を表す。 In general, niobium organic acid is often expressed as (RCOO) 5 Nb, but there are various carbon contents and Nb contents. Actually, the binding unit forming the niobium organic acid is “RCOO-Nb and Nb—O—Nb”, “RCOO-Nb and Nb═O” or “RCOO-Nb and Nb—O—Nb and Nb═O”. For example, a model represented by a simple structure is represented by the following chemical formula, but it is difficult to accurately identify the chemical structure in practice. In the following chemical formula, L represents an organic acid residue.
ここで、例えば、ニオブペンタアルコキシドと有機酸を反応させることにより得られた(RCOO)5Nbの組成に近い炭素含有量、Nb含有量を有する有機酸ニオブ誘導体は、保存安定性が悪い。なお、ニオブペンタアルコキシドから得られた有機酸ニオブ誘導体は、アルコキシ基が残存し易いことが知られており、実際には、RCOO−Nb、Nb−O−Nb、Nb−OR’(OR’は原料由来のアルコキシ基)から構成される化合物と考えられている。また、(RCOO)5Nbの構造を有する化合物自体の保存安定性が悪いことも考えられる。一方、分子中のNb−O−Nbの連鎖が大きいものは、分子量、ニオブ含有量が大きくなり、炭素含有量が小さくなる。このような有機酸ニオブ誘導体は溶解性が悪化するので、使用できる溶剤やその濃度が制限され、即ち、溶解性のマージンが狭くなる。また、他の金属プレカーサと併用する時に、得られる薄膜中に酸化ニオブが局在化するので、所望する均一な組成や結晶構造を形成できない部分が多くなり、得られる薄膜は、期待される電気特性が得られない。 Here, for example, an organic acid niobium derivative having a carbon content and Nb content close to the composition of (RCOO) 5 Nb obtained by reacting niobium pentaalkoxide and an organic acid has poor storage stability. In addition, it is known that an organic acid niobium derivative obtained from niobium pentaalkoxide has an alkoxy group remaining easily. Actually, RCOO-Nb, Nb-O-Nb, Nb-OR '(OR' is It is considered to be a compound composed of a raw material-derived alkoxy group). In addition, the storage stability of the compound itself having the structure of (RCOO) 5 Nb may be poor. On the other hand, when the Nb—O—Nb chain in the molecule is large, the molecular weight and niobium content increase, and the carbon content decreases. Since such organic acid niobium derivatives have poor solubility, the solvent that can be used and its concentration are limited, that is, the margin of solubility is narrowed. In addition, when used in combination with other metal precursors, niobium oxide is localized in the obtained thin film, so that there are many portions where the desired uniform composition and crystal structure cannot be formed. Characteristics are not obtained.
更に、Nb[C4H9CH(C2H5)COO]5の理論値に近い2−エチルヘキサン酸ニオブ、即ち、ニオブ含有量が11.5質量%前後のものをプレカーサとして使用した塗布液は保存安定性が悪いという問題を有している。また、このような有機酸ニオブは、更に他のプレカーサ化合物と混合して使用する場合に化学反応により、塗布液のゲル化や沈殿が生ずる等の問題点もある。 Furthermore, niobium 2-ethylhexanoate close to the theoretical value of Nb [C 4 H 9 CH (C 2 H 5 ) COO] 5 , that is, a coating using a niobium content of about 11.5% by mass as a precursor. The liquid has a problem of poor storage stability. Further, such an organic acid niobium also has problems such as gelation or precipitation of the coating liquid due to a chemical reaction when used in combination with another precursor compound.
従って、本発明の目的は、MOD法のプレカーサとして有用な2−エチルヘキサン酸ニオブ誘導体及びその製造方法を提供することにある。 Accordingly, an object of the present invention is to provide a niobium 2-ethylhexanoate derivative useful as a precursor for the MOD method and a method for producing the same.
本発明者らは、鋭意検討を重ねた結果、特定の構造を有する2−エチルヘキサン酸ニオブ誘導体が上記問題点を解決し得ることを見出し、本発明を完成するに至った。
即ち、本発明の2−エチルヘキサン酸ニオブ誘導体は、ニオブ含有量が13〜16質量%であり、炭素含有量が50〜58質量%の範囲内であり、且つニオブ原子、酸素原子及び2−エチルヘキサン酸残基のみから構成されていることを特徴とする。
As a result of intensive studies, the present inventors have found that a niobium 2-ethylhexanoate derivative having a specific structure can solve the above problems, and have completed the present invention.
That is, the niobium 2-ethylhexanoate derivative of the present invention has a niobium content of 13 to 16% by mass, a carbon content of 50 to 58% by mass, a niobium atom, an oxygen atom, and 2- It consists of only ethylhexanoic acid residues.
また、上記2−エチルヘキサン酸ニオブ誘導体は、ペンタキス(アルコキシ)ニオブと、2−エチルヘキサン酸とを反応させることを特徴として製造することができる。 The 2-ethylhexanoic acid niobium derivative can be produced by reacting pentakis (alkoxy) niobium with 2-ethylhexanoic acid.
本発明によれば、有機溶剤に対する溶解性に優れ、他のプレカーサ化合物と混合した時に安定した溶液を提供することができるMOD法のプレカーサとして好適な2−エチルヘキサン酸ニオブ誘導体が得られるという効果を奏するものである。 According to the present invention, it is possible to obtain a niobium 2-ethylhexanoate derivative suitable as a precursor for the MOD method, which is excellent in solubility in an organic solvent and can provide a stable solution when mixed with another precursor compound. It plays.
本発明の2−エチルヘキサン酸ニオブ誘導体は、ニオブ含有量が13〜16質量%、好ましくは13〜15質量%の範囲内にあり、炭素含有量が50〜58質量%、好ましくは52〜57質量%の範囲内にあり、ニオブ原子、酸素原子及び2−エチルヘキサン酸残基のみから構成されているものである。なお、2−エチルヘキサン酸ニオブの理論値は、ニオブ含有量が11.5質量%であり、炭素含有量が59.4質量%である。 The niobium 2-ethylhexanoate derivative of the present invention has a niobium content of 13 to 16% by mass, preferably 13 to 15% by mass, and a carbon content of 50 to 58% by mass, preferably 52 to 57%. It exists in the range of the mass%, and is comprised only from the niobium atom, the oxygen atom, and 2-ethylhexanoic acid residue. The theoretical value of niobium 2-ethylhexanoate has a niobium content of 11.5% by mass and a carbon content of 59.4% by mass.
ここで、ニオブ含有量が13質量%未満となると、保存安定性が悪くなるために好ましくなく、また、16質量%を超えると、溶解性のマージンが狭くなるために好ましくない。また、炭素含有量が50質量%未満となると、溶解性のマージンが狭くなるために好ましくなく、また、58質量%を超えると、保存安定性が悪くなるために好ましくない。 Here, when the niobium content is less than 13% by mass, the storage stability is deteriorated, which is not preferable, and when it exceeds 16% by mass, the solubility margin is not preferable. Further, if the carbon content is less than 50% by mass, the solubility margin becomes narrow, which is not preferable, and if it exceeds 58% by mass, the storage stability is deteriorated, which is not preferable.
本発明の2−エチルヘキサン酸ニオブ誘導体の特徴は、液体であること、保存安定性に優れること、混合安定性に優れること、溶解性のマージンが広いことであり、それ故、MOD法のプレカーサとして有用である。このような特徴は、有機酸成分として2−エチルヘキサン酸を選択したことも寄与している。 The features of the niobium 2-ethylhexanoate derivative of the present invention are liquid, excellent storage stability, excellent mixing stability, and a wide solubility margin. Therefore, a precursor for the MOD method is used. Useful as. Such characteristics also contribute to the selection of 2-ethylhexanoic acid as the organic acid component.
例えば、酢酸や吉草酸等の有機酸成分である炭素数の少ない有機酸ニオブ誘導体は、固体化する傾向があり、安定な塗布液を与え難い。また、有機溶剤に対する溶解性が低いので、溶解性のマージンが得られない。更には、不快な臭気を発生する問題を有している。また、有機酸成分の炭素数が多いものは、ニオブ含有量が少ないので、モル換算の溶解性について、充分な溶解性マージンが得られない場合がある。また、このような有機酸ニオブ誘導体をプレカーサに用いて得られる薄膜は不純物カーボン残渣が多くなる。 For example, organic acid niobium derivatives having a small number of carbon atoms, which are organic acid components such as acetic acid and valeric acid, tend to be solidified and are difficult to give a stable coating solution. Moreover, since the solubility with respect to an organic solvent is low, a solubility margin cannot be obtained. Furthermore, there is a problem of generating an unpleasant odor. In addition, since the organic acid component having a large number of carbon atoms has a small niobium content, a sufficient solubility margin may not be obtained in terms of solubility in terms of mole. In addition, a thin film obtained by using such an organic acid niobium derivative in a precursor has a large amount of impurity carbon residues.
本発明の2−エチルヘキサン酸ニオブ誘導体の製造方法は、出発原料としてペンタキス(アルコキシ)ニオブを原料に用いる方法である。ペンタキス(アルコキシ)ニオブを原料に用いる方法としては、2−エチルヘキサン酸を加えて加熱する方法、ペンタキス(アルコキシ)ニオブと2−エチルヘキサン酸との反応時に副生する水を取り除く、脱水剤を併用する方法が挙げられる。なお、ペンタキス(アルコキシ)ニオブと2−エチルヘキサン酸の反応割合は、ペンタキス(アルコキシ)ニオブ1モルに対して、2−エチルヘキサン酸3〜8モル、好ましくは4〜6モルの範囲内である。ここで、2−エチルヘキサン酸の量が3モル未満となると、アルコキシ基が残留し、保存安定性が悪化するため好ましくなく、また、8モルを超えると、添加量の増加に伴う効果が発揮されず、経済的に不利となるために好ましくない。 The method for producing a 2-ethylhexanoic acid niobium derivative of the present invention is a method using pentakis (alkoxy) niobium as a starting material. As a method of using pentakis (alkoxy) niobium as a raw material, a method in which 2-ethylhexanoic acid is added and heated, water generated as a by-product in the reaction between pentakis (alkoxy) niobium and 2-ethylhexanoic acid is removed, and a dehydrating agent is used. The method of using together is mentioned. The reaction ratio of pentakis (alkoxy) niobium and 2-ethylhexanoic acid is in the range of 3 to 8 mol, preferably 4 to 6 mol, of 2-ethylhexanoic acid with respect to 1 mol of pentakis (alkoxy) niobium. . Here, when the amount of 2-ethylhexanoic acid is less than 3 mol, an alkoxy group remains and storage stability is deteriorated, which is not preferable. When it exceeds 8 mol, an effect associated with an increase in the addition amount is exhibited. This is not preferable because it is economically disadvantageous.
なお、本発明の2−エチルヘキサン酸ニオブ誘導体の製造方法において、出発原料として使用されるペンタキス(アルコキシ)ニオブとしては、例えばペンタキス(メトキシ)ニオブ、ペンタキス(エトキシ)ニオブ、ペンタキス(プロポキシ)ニオブ、ペンタキス(イソプロポキシ)ニオブ、ペンタキス(ブトキシ)ニオブ等の炭素数1〜4のアルコキシドを例示することができる。 In the method for producing a 2-ethylhexanoic acid niobium derivative of the present invention, examples of pentakis (alkoxy) niobium used as a starting material include pentakis (methoxy) niobium, pentakis (ethoxy) niobium, pentakis (propoxy) niobium, Examples thereof include alkoxides having 1 to 4 carbon atoms such as pentakis (isopropoxy) niobium and pentakis (butoxy) niobium.
なお、ペンタキス(アルコキシ)ニオブを出発原料として使用する場合に、反応系内に水が存在するとNb−O−Nbの連鎖が進むので、反応の制御が難しくなる。従って、本発明の2−エチルヘキサン酸ニオブ誘導体の製造方法としては、副生する水を消費する脱水剤を用いるのが好ましい。上記の脱水剤としては、無水酢酸、無水マレイン酸、無水シトラコン酸、無水マロン酸、無水イタコン酸、無水フタル酸、無水スクシン酸等の酸無水物、オルトギ酸トリエチル、オルトギ酸トリメチル等のオルトギ酸エステル等が挙げられる。この中でも、反応後、反応系内から除去するのが容易であるので酸無水物が好ましく、無水酢酸が最も好ましい。また、脱水剤の使用量は、原料であるペンタキス(アルコキシ)ニオブ1モルに対して、0.5〜10モル、好ましくは1〜8モルの範囲内である。脱水剤の使用量が0.5モル未満であると、使用効果が発現しない場合があるために好ましくなく、また、10モルを超えると、添加量の増加に伴う効果が発揮されず、経済的に不利となるために好ましくない。 In the case of using pentakis (alkoxy) niobium as a starting material, if water is present in the reaction system, the Nb—O—Nb chain advances, making it difficult to control the reaction. Therefore, it is preferable to use a dehydrating agent that consumes by-produced water as the method for producing the niobium 2-ethylhexanoate derivative of the present invention. Examples of the dehydrating agent include acetic anhydride, maleic anhydride, citraconic anhydride, malonic anhydride, itaconic anhydride, phthalic anhydride, succinic anhydride and the like, and orthoformate such as triethyl orthoformate and trimethyl orthoformate. Examples include esters. Among these, an acid anhydride is preferable because it can be easily removed from the reaction system after the reaction, and acetic anhydride is most preferable. Moreover, the usage-amount of a dehydrating agent is 0.5-10 mol with respect to 1 mol of pentakis (alkoxy) niobium which is a raw material, Preferably it exists in the range of 1-8 mol. If the use amount of the dehydrating agent is less than 0.5 mol, the use effect may not be exhibited, which is not preferable. If the use amount exceeds 10 mol, the effect associated with the increase in the addition amount is not exhibited, which is economical. It is not preferable because it is disadvantageous.
また、本発明の2−エチルヘキサン酸ニオブ誘導体の製造方法において、反応温度は、100〜150℃、好ましくは110〜140℃の範囲内である。ここで、反応温度が100℃未満であると、反応を完結させるために時間が掛り、また、生成物中にアルコキシ基が残留することがあるため好ましくなく、また、150℃を超えると、反応の制御が難しくなり、分子量、ニオブ含有量のコントロールが困難になる場合があるために好ましくない。 Moreover, in the manufacturing method of the 2-ethyl hexanoic acid niobium derivative of this invention, reaction temperature is 100-150 degreeC, Preferably it exists in the range of 110-140 degreeC. Here, if the reaction temperature is less than 100 ° C., it takes time to complete the reaction, and an alkoxy group may remain in the product. Is difficult to control, and it may be difficult to control the molecular weight and niobium content.
本発明の2−エチルヘキサン酸ニオブ誘導体をMOD法の原料として用いる場合、有機溶剤並びに必要により用いられる他の元素を薄膜に導入するプレカーサ化合物等を含有する組成物として用いることができる。該組成物の形態は、エマルション、サスペンション、ディスパージョン、コロイダル分散液、溶液のいずれでも良いが、薄膜組成の均一性が良好で且つ表面状態が良好な薄膜を形成することができる溶液として使用することが好ましい。また、該組成物中の2−エチルヘキサン酸ニオブ誘導体の含有量は、通常、基体への塗布が容易である1〜50質量%の範囲内であり、好ましくは5〜40質量%の範囲内である。 When the 2-ethylhexanoic acid niobium derivative of the present invention is used as a raw material for the MOD method, it can be used as a composition containing an organic solvent and a precursor compound or the like that introduces other elements used as needed into the thin film. The form of the composition may be any of emulsion, suspension, dispersion, colloidal dispersion, and solution, but it is used as a solution that can form a thin film with good uniformity of the thin film composition and good surface condition. It is preferable. Further, the content of the niobium 2-ethylhexanoate derivative in the composition is usually in the range of 1 to 50% by mass, preferably in the range of 5 to 40% by mass, which is easy to apply to the substrate. It is.
上記の有機溶剤としては、アルコール系溶剤、ポリオール系溶剤、ケトン系溶剤、エステル系、エーテル系溶剤、ポリエーテル系溶剤、脂肪族炭化水素系溶剤、芳香族炭化水素系溶剤、塩素系溶剤、シアノ基を有する炭化水素溶剤、ピロリドン溶剤等が挙げられ、これらは1種又は2種以上を混合して用いることができる。 Examples of the organic solvent include alcohol solvents, polyol solvents, ketone solvents, ester solvents, ether solvents, polyether solvents, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, chlorine solvents, cyano solvents. Examples thereof include hydrocarbon solvents having groups, pyrrolidone solvents, and the like, and these can be used alone or in combination.
上記の他の元素を薄膜に導入するためのプレカーサ化合物としては、金属アルコキシド化合物、有機酸金属化合物、β−ジケトン金属錯体が好ましく、金属アルコキシド化合物、有機酸金属塩化合物がより好ましい。 As a precursor compound for introducing the other element into the thin film, a metal alkoxide compound, an organic acid metal compound, and a β-diketone metal complex are preferable, and a metal alkoxide compound and an organic acid metal salt compound are more preferable.
本発明の2−エチルヘキサン酸ニオブ誘導体を用いるMOD用原料を用いるMOD法により製造可能な薄膜としては、例えば酸化ニオブ、ニオブ−タンタル酸化物(Ta2−xNbxO5)等の誘電体薄膜;ニオブ酸リチウム等の圧電体薄膜;ニオブ−タンタル酸ビスマス[Bi2(TamNb1−m)2O5]、ニオブ−タンタル酸ビスマスストロンチウム(Sr1−xBaxTa2−yNbyO9)、ニオブ添加チタン酸鉛、ニオブ添加チタン酸ビスマス、ニオブ添加チタン酸鉛、ニオブ添加チタン酸ジルコン酸鉛等の強誘電体薄膜が挙げられる。 Examples of the thin film that can be produced by the MOD method using the MOD raw material using the 2-ethylhexanoic acid niobium derivative of the present invention include dielectrics such as niobium oxide and niobium-tantalum oxide (Ta 2−x Nb x O 5 ). Thin film; Piezoelectric thin film such as lithium niobate; Niobium-bismuth tantalate [Bi 2 (Ta m Nb 1-m ) 2 O 5 ], Niobium-bismuth strontium tantalate (Sr 1-x Ba x Ta 2-y Nb y O 9 ), niobium-doped lead titanate, niobium-doped bismuth titanate, niobium-doped lead titanate, and niobium-doped lead zirconate titanate ferroelectric thin films.
以下に、実施例及び比較例を挙げて本発明を更に詳細に説明する。なお、本発明は以下の実施例等によって限定されるものではないことを理解されたい。
実施例1:2−エチルヘキサン酸ニオブ誘導体1の製造
乾燥アルゴンガス雰囲気下で、反応フラスコにペンタキス(エトキシ)ニオブ0.5モル、乾燥トルエン200mlを仕込み、これを無水酢酸2.6モル、2−エチルヘキサン酸2.6モルを加え、バス温度120℃で4時間還流させた後、バス温度135℃でトルエン及び低沸点物を反応系から留去し、更に、系内を3〜1トールに減圧して濃縮することにより黄色粘性液体345gを得た。得られた黄色粘性液体について、以下の測定を行った:
Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples. It should be understood that the present invention is not limited to the following examples.
Example 1 Production of Niobium 2-Ethylhexanoate Derivative 1 Under a dry argon gas atmosphere, 0.5 mol of pentakis (ethoxy) niobium and 200 ml of dry toluene were charged into a reaction flask, and 2.6 mol of acetic anhydride, 2 -After 2.6 mol of ethylhexanoic acid was added and refluxed at a bath temperature of 120 ° C for 4 hours, toluene and low-boiling substances were distilled off from the reaction system at a bath temperature of 135 ° C. To 345 g of a yellow viscous liquid. The resulting yellow viscous liquid was subjected to the following measurements:
(1)元素分析
試料質量に対し45倍の63%硝酸水を加え、100℃に加熱して得た粉末をNb2O5として定量したところ、ニオブ含有量は13.7質量%であった。
また、炭素及び水素含有量をCHN元素分析により行ったところ、C含有量は55.1質量%、H含有量は8.3質量%であった。
(2)スペクトル分析
・1H−NMR分析:得られたチャートを図1に示す。図1に示す1H−NMR分析のチャートから、アルコキシ基が不在であることが確認できた。
・13C−NMR(溶媒:重ベンゼン):得られたチャートを図2に示す。図2に示すチャートから、アルコキシ基が不在であることが確認できた。また、2−エチルヘキサン酸残基の炭素ピークが各々複数観察された。このことは、複数の環境の2−エチルヘキサン酸残基が存在していることを示すものである。
・IR(塗布法):得られたチャートを図3に示す。図3に示すチャートから、1500〜1600cm−1に複数の吸収が観察され、1400〜1500cm−1にも複数の吸収が観察された。このことは、複数種のCOONbが存在していることを示している。
(3)熱分析
TG−DTA(空気300ml/分、昇温速度:10℃/分、サンプル量38.8037mg、リファレンスアルミナ7.1320mg):得られたチャートを図4に示す。
(1) Elemental analysis The powder obtained by adding 45% 63% nitric acid water to the sample mass and heating to 100 ° C. was quantified as Nb 2 O 5, and the niobium content was 13.7% by mass.
Moreover, when carbon and hydrogen content were performed by CHN elemental analysis, C content was 55.1 mass% and H content was 8.3 mass%.
(2) Spectral analysis / 1 H-NMR analysis: The obtained chart is shown in FIG. From the chart of 1 H-NMR analysis shown in FIG. 1, it was confirmed that the alkoxy group was absent.
* 13 C-NMR (solvent: heavy benzene): The obtained chart is shown in FIG. From the chart shown in FIG. 2, it was confirmed that the alkoxy group was absent. A plurality of carbon peaks of 2-ethylhexanoic acid residues were observed. This indicates that there are a plurality of environmental 2-ethylhexanoic acid residues.
IR (coating method): The obtained chart is shown in FIG. From the chart shown in FIG. 3, a plurality of absorptions were observed at 1500 to 1600 cm −1, and a plurality of absorptions were also observed at 1400 to 1500 cm −1 . This indicates that multiple types of COONb exist.
(3) Thermal analysis TG-DTA (air 300 ml / min, temperature rising rate: 10 ° C./min, sample amount 38.8037 mg, reference alumina 7.1320 mg): The obtained chart is shown in FIG.
比較例1:2−エチルヘキサン酸ニオブ誘導体2の製造
乾燥アルゴンガス雰囲気下で、反応フラスコに五塩化ニオブ0.5モル、エタノール200mlを仕込み、2−エチルヘキサン酸2.6モルを加え、アンモニアガスを吹き込みながら2時間撹拌した。アンモニアガスを止め、バス温度80℃で4時間還流させた後、アルゴンガスを吹き込みながら、更に1時間還流した。反応液を室温まで冷却し、塩化アンモニウムをデカンション及び濾過により取り除いた溶液について、溶媒をエタノールからトルエンに交換して、析出した塩化アンモニウムを濾別した。この溶液をバス温度135℃でトルエン及び低沸点物を留去した後、更に系内を3〜1トールに減圧して濃縮を行い、黄色粘性液体345gを得た。得られた黄色粘性液体について、上記実施例1と同様に元素分析を行ったところ、ニオブ含有量は12.2質量%であり、炭素含有量は59.0質量%であった。
Comparative Example 1 Production of Niobium 2-ethylhexanoate Derivative 2 Under a dry argon gas atmosphere, 0.5 mol of niobium pentachloride and 200 ml of ethanol were charged into a reaction flask, and 2.6 mol of 2-ethylhexanoic acid was added thereto. The mixture was stirred for 2 hours while blowing gas. The ammonia gas was stopped and refluxed at a bath temperature of 80 ° C. for 4 hours, and then refluxed for another hour while blowing argon gas. The reaction solution was cooled to room temperature, and from the solution from which ammonium chloride was removed by decantation and filtration, the solvent was changed from ethanol to toluene, and the precipitated ammonium chloride was separated by filtration. Toluene and low-boiling substances were distilled off from this solution at a bath temperature of 135 ° C., and the system was further concentrated under reduced pressure to 3 to 1 torr to obtain 345 g of a yellow viscous liquid. Elemental analysis was performed on the obtained yellow viscous liquid in the same manner as in Example 1. As a result, the niobium content was 12.2% by mass and the carbon content was 59.0% by mass.
比較例2:2−エチルヘキサン酸ニオブ誘導体3の製造
乾燥アルゴンガス雰囲気下で、反応フラスコにペンタキス(エトキシ)ニオブ0.5モル、乾燥キシレン200mlを仕込み、これに2−エチルヘキサン酸2.6モルを加え、バス温度145℃で4時間還流させた後、バス温度145℃でキシレン及び低沸点物を反応系から留去し、更に、系内を3〜1トールに減圧して濃縮することにより黄色粘性液体335gを得た。得られた黄色粘性液体について、実施例1と同様に元素分析を行ったところ、ニオブ含有量は17.4質量%であり、炭素含有量は53.0質量%であった。
Comparative Example 2: Production of 2-ethylhexanoic acid niobium derivative 3 Under a dry argon gas atmosphere, 0.5 mol of pentakis (ethoxy) niobium and 200 ml of dry xylene were charged into a reaction flask, and 2.6 ethyl 2-ethylhexanoate was added thereto. After adding 4 moles and refluxing at a bath temperature of 145 ° C. for 4 hours, xylene and low-boiling substances are distilled off from the reaction system at a bath temperature of 145 ° C., and the system is further concentrated under reduced pressure to 3 to 1 Torr. Gave 335 g of a yellow viscous liquid. Elemental analysis was performed on the obtained yellow viscous liquid in the same manner as in Example 1. As a result, the niobium content was 17.4% by mass and the carbon content was 53.0% by mass.
評価1
上記実施例1、比較例1及び比較例2で得られた2−エチルヘキサン酸ニオブ誘導体1〜3について、トルエン及びブタノールを用いて有機溶剤への溶解性を評価した。有機溶剤6gと2−エチルヘキサン酸ニオブ誘導体4gを混合した結果を表1に示す。
Evaluation 1
The 2-ethylhexanoic acid niobium derivatives 1 to 3 obtained in Example 1, Comparative Example 1 and Comparative Example 2 were evaluated for solubility in organic solvents using toluene and butanol. Table 1 shows the result of mixing 6 g of the organic solvent and 4 g of the 2-ethylhexanoic acid niobium derivative.
評価2
上記実施例1及び比較例1で得られた2−エチルヘキサン酸ニオブ誘導体1〜2について、ペンタキス(エトキシ)タンタル0.6モル/リットルのテトラヒドロフラン溶液を用いて混合安定性の試験を行った。タンタルアルコキシド溶液に2−エチルヘキサン酸ニオブ誘導体をニオブのモル数がタンタルの50%になる量加えた溶液と2−エチルヘキサン酸ニオブ誘導体を加えない溶液を20mlのサンプル瓶に10ml入れ、30℃湿度50%の恒温恒湿槽に18時間保存した後の試料の様子を観察した。結果を表2に示す。
Evaluation 2
The 2-ethylhexanoic acid niobium derivatives 1 and 2 obtained in Example 1 and Comparative Example 1 were tested for mixing stability using a pentakis (ethoxy) tantalum 0.6 mol / liter tetrahydrofuran solution. 10 ml of a solution in which 2-ethylhexanoic acid niobium derivative is added to the tantalum alkoxide solution in an amount so that the molar number of niobium is 50% of tantalum and 2-ethylhexanoic acid niobium derivative is not added is placed in a 20 ml sample bottle at 30 ° C. The state of the sample after being stored in a constant temperature and humidity chamber with a humidity of 50% for 18 hours was observed. The results are shown in Table 2.
上記結果より、本発明の2−エチルヘキサン酸ニオブ誘導体は、有機溶剤に対する溶解性が良好であり、また、他のプレカーサ化合物との混合安定性も良好であることが確認できた。なお、タンタルエトキシドに対しては安定化付与効果も有することが確認できた。 これに対し、ニオブ含有量の多い2−エチルヘキサン酸ニオブ誘導体は、溶解性が劣り、ニオブ含有量が少ない2−エチルヘキサン酸ニオブ誘導体は、他のプレカーサ化合物との混合安定化に劣る。
このことは、本発明の2−エチルヘキサン酸ニオブ誘導体が、MOD法のプレカーサとして特異的に優れた効果を示すものである。
From the above results, it was confirmed that the niobium 2-ethylhexanoate derivative of the present invention has good solubility in organic solvents and also has good mixing stability with other precursor compounds. It has been confirmed that the tantalum ethoxide has a stabilizing effect. On the other hand, a 2-ethylhexanoic acid niobium derivative having a high niobium content is inferior in solubility, and a 2-ethylhexanoic acid niobium derivative having a low niobium content is inferior in mixing and stabilization with other precursor compounds.
This indicates that the niobium 2-ethylhexanoate derivative of the present invention has a particularly excellent effect as a precursor for the MOD method.
本発明の2−エチルヘキサン酸ニオブ誘導体は、MOD法のプレカーサとして好適に使用することができる。 The niobium 2-ethylhexanoate derivative of the present invention can be suitably used as a precursor for the MOD method.
Claims (6)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005171441A JP2006342138A (en) | 2005-06-10 | 2005-06-10 | Niobium 2-ethylhexanoate derivative and its preparation method |
PCT/JP2006/310737 WO2006132107A1 (en) | 2005-06-10 | 2006-05-30 | Niobium 2-ethylhexanoate derivative, process for producing the derivative, organic acid metal salt composition containing the derivative, and process for producing thin film from the composition |
CN2006800205880A CN101193849B (en) | 2005-06-10 | 2006-05-30 | Niobium 2-ethylhexanoate derivative, method for producing the derivative, organic acid metal salt composition containing the derivative, and method for producing thin film using the composition |
KR1020087000655A KR101289950B1 (en) | 2005-06-10 | 2006-05-30 | Niobium 2-ethylhexanoate derivative, process for producing the derivative, organic acid metal salt composition containing the derivative, and process for producing thin film from the composition |
US11/921,575 US20090136658A1 (en) | 2005-06-10 | 2006-05-30 | Niobium 2-Ethylhexanoate Derivative, Method Of Producing The Derivative, Organic Acid Metal Salt Composition Containing The Derivative, And Method Of Producing Thin Film Using The Composition |
US12/654,841 US20100159128A1 (en) | 2005-06-10 | 2010-01-06 | Niobium 2-ethylhexanoate derivative, method of producing the derivative, organic acid metal salt composition containing the derivative, and method of producing thin film using the composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005171441A JP2006342138A (en) | 2005-06-10 | 2005-06-10 | Niobium 2-ethylhexanoate derivative and its preparation method |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006342138A true JP2006342138A (en) | 2006-12-21 |
Family
ID=37639361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005171441A Pending JP2006342138A (en) | 2005-06-10 | 2005-06-10 | Niobium 2-ethylhexanoate derivative and its preparation method |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2006342138A (en) |
CN (1) | CN101193849B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008169059A (en) * | 2007-01-09 | 2008-07-24 | Adeka Corp | Coating liquid composition and method for producing metal oxide film using the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08253490A (en) * | 1995-01-03 | 1996-10-01 | Hc Starck Gmbh & Co Kg | Nb, Ta and Ti salt solutions, their production and their use |
JP2001505367A (en) * | 1996-12-23 | 2001-04-17 | シメトリックス・コーポレーション | Electrode structure of integrated circuit and manufacturing method thereof |
JP2009148706A (en) * | 2007-12-20 | 2009-07-09 | Showa Denko Kk | Electrode catalyst and its application, and manufacturing method of this electrode catalyst |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6002031A (en) * | 1998-09-04 | 1999-12-14 | International Business Machines Corporation | Metal alkoxyalkoxidecarboxylates and use to form films |
-
2005
- 2005-06-10 JP JP2005171441A patent/JP2006342138A/en active Pending
-
2006
- 2006-05-30 CN CN2006800205880A patent/CN101193849B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08253490A (en) * | 1995-01-03 | 1996-10-01 | Hc Starck Gmbh & Co Kg | Nb, Ta and Ti salt solutions, their production and their use |
JP2001505367A (en) * | 1996-12-23 | 2001-04-17 | シメトリックス・コーポレーション | Electrode structure of integrated circuit and manufacturing method thereof |
JP2009148706A (en) * | 2007-12-20 | 2009-07-09 | Showa Denko Kk | Electrode catalyst and its application, and manufacturing method of this electrode catalyst |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008169059A (en) * | 2007-01-09 | 2008-07-24 | Adeka Corp | Coating liquid composition and method for producing metal oxide film using the same |
Also Published As
Publication number | Publication date |
---|---|
CN101193849B (en) | 2011-12-28 |
CN101193849A (en) | 2008-06-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101289950B1 (en) | Niobium 2-ethylhexanoate derivative, process for producing the derivative, organic acid metal salt composition containing the derivative, and process for producing thin film from the composition | |
US7819965B2 (en) | Coating formulation and process for the production of titanate-based ceramic film with the coating formulation | |
CN105940515B (en) | Adulterate the PZT systems piezoelectric film formation composition of Mn and Nb | |
JP4329287B2 (en) | PLZT or PZT ferroelectric thin film, composition for forming the same and method for forming the same | |
TW201340130A (en) | Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method | |
JP2001261338A (en) | Raw material solution for forming titanium-containing metal oxide thin film, method of forming the same, and titanium-containing metal oxide thin film | |
JP6481394B2 (en) | Mn-doped PZT piezoelectric film | |
JP2002047011A (en) | Method of forming compact perovskite metallic oxide thin film and compact perovskite metallic oxide thin film | |
JP5655272B2 (en) | Composition for forming ferroelectric thin film, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method | |
EP1790622A1 (en) | Complex metal oxide raw material composition | |
JP2006342138A (en) | Niobium 2-ethylhexanoate derivative and its preparation method | |
Chen et al. | Liquid delivery MOCVD of niobium-doped Pb (Zr, Ti) O3 using a novel niobium precursor | |
TWI286996B (en) | Coating solutions for use in forming bismuth-based paraelectric or ferroelectric thin films, and bismuth-based paraelectric or ferroelectric thin films | |
JP5080816B2 (en) | Coating liquid composition and method for producing metal oxide film using the coating liquid composition | |
JP4329289B2 (en) | SBT ferroelectric thin film, composition for forming the same, and method for forming the same | |
JP5533622B2 (en) | Composition for forming ferroelectric thin film, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method | |
JP4048650B2 (en) | Raw material solution for forming perovskite oxide thin films | |
JPH08245263A (en) | Thin oxide film and its production | |
JP4329288B2 (en) | BLT or BT ferroelectric thin film, composition for forming the same and method for forming the same | |
JP2001139329A (en) | Method for forming Pb-based perovskite-type metal oxide thin film and Pb-based perovskite-type metal oxide thin film | |
JP5659457B2 (en) | Composition for forming ferroelectric thin film, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method | |
JP4932183B2 (en) | Organic acid metal salt composition and method for producing thin film using the composition | |
JP2001072926A (en) | Starting solution for formation of perovskite-type oxide thin film | |
JP2010206153A (en) | Composition for ferroelectric thin film formation, method for ferroelectric thin film formation, and ferroelectric thin film formed by the method | |
JP5526593B2 (en) | Composition for forming ferroelectric thin film, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080508 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110621 |
|
A521 | Written amendment |
Effective date: 20110815 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
|
A02 | Decision of refusal |
Effective date: 20110830 Free format text: JAPANESE INTERMEDIATE CODE: A02 |