JP2006319109A - Lead frame for semiconductor device, package for semiconductor device using the same, and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a lead frame for a semiconductor device which has good resin adhesion with a sealing resin, is easily deburred and has excellent moisture resistance, a package for a semiconductor device using the lead frame, and a manufacturing method thereof.
SOLUTION: A frame, a plurality of lead portions projecting inwardly from the frame, and a die pad portion formed on at least one lead portion of the lead portion, and resin-sealed at the leading end of the lead portion and the die pad portion In the lead frame for a semiconductor device having a region, a first film having a lower adhesion to the sealing resin compared to the resin sealing region is formed in the non-resin sealing region of the lead portion, and In the resin sealing region, a second film having a higher adhesion with the sealing resin than the first film is formed.
[Selection] Figure 1

Description

  The present invention relates to a lead frame for a premold package, and more particularly to a method for manufacturing a premold package for an optical semiconductor.

  As a conventional method for improving the resin adhesion between the lead frame and the sealing resin, the inner lead is subjected to V-groove or mesh processing, or the lead frame is roughened by chemical etching or the like to make the surface uneven. It has been known. However, if the roughening treatment is applied to the entire area, it is difficult to peel off the resin burr generated outside the sealing area at the time of sealing, so the resin adhesion between the roughening treatment and the resin burr is poor. May be formed on the inner lead (for example, Patent Document 1).

FIG. 4 is a cross-sectional view showing a part of the manufacturing process of the conventional lead molding package lead frame described in Patent Document 1. In FIG. In FIG. 4, a lead frame 201 whose entire surface has been subjected to a roughening process uses a die (fixed-side mold) 205 having a bottom surface 206 to be mirror-finished to mirror-finish part of the die pad 202 and the inner lead 204. Thus, a lead frame for a pre-mold package is manufactured.
JP 2004-165567 A

  However, in the above-described conventional configuration, the entire surface of the lead frame 201 is first roughened, and then a part of the lead frame 201 is mirror-finished using the punch 207. There has been a problem that a step is generated between the portions, which causes a resin burr when resin molding is performed. Further, since the surface state is controlled by pressing, it is difficult to manage the die 205 and the punch (movable side mold) 207, and there is a problem that the package is peeled and damaged together with the resin burr in the resin burr peeling process. Furthermore, depending on the material that forms the outermost surface of the lead frame, such as copper and silver, for example, the bonding force between the metal and the resin is strong. There was also a problem that it was very difficult.

  SUMMARY OF THE INVENTION The present invention solves the above-described conventional problems, and has a good resin adhesion between the lead frame and the mold resin, is easy to deburr, and has excellent moisture resistance, and a manufacturing method thereof, and A semiconductor device package using the same is provided.

  In order to solve the above-described conventional problems, a lead frame for a semiconductor device, a package for a semiconductor device using the same, and a manufacturing method thereof according to the present invention include a frame, a plurality of lead portions protruding inward from the frame, and at least A lead frame for a semiconductor device comprising a die pad part formed on one lead part and having a resin sealing area at the tip of the lead part and the die pad part. The first film having a smaller adhesion with the sealing resin compared to the first film is formed, and the first film having a larger adhesion with the sealing resin compared with the first film in the resin sealing region. A second film is formed.

  A package for a semiconductor device using the same has a frame, a plurality of lead portions projecting inwardly from the frame, a die pad portion formed on at least one lead portion, a tip of the lead portion, and a die pad portion. In a package for a semiconductor device having a resin envelope in the resin sealing region, a first film having less adhesion to the sealing resin than the resin sealing region is formed in the non-resin sealing region of the lead portion. Further, the resin envelope is formed in a state where the tip of the lead portion and the die pad portion are exposed.

  A semiconductor device package manufacturing method includes: a plurality of lead portions projecting inwardly from a frame of a metal plate material; a step of forming a die pad portion on at least one lead portion; A step of forming a film, a step of forming a second film having a greater adhesion to the sealing resin compared to the first film in the resin sealing region of the lead portion, and a resin enclosure in the resin sealing region And a step of forming a vessel.

  According to this configuration, the resin-sealed region in which the sealing resin is formed has a film formed of a metal having a high adhesion to the resin, so that good moisture resistance can be obtained after the resin sealing. In addition, since a film having a small adhesion force is formed in the non-resin-sealed region where resin burrs are generated, the resin burrs attached to the non-resin-sealed region can be easily removed and the deburring process is simplified. be able to.

  In addition, the method for manufacturing a lead frame for a semiconductor device according to the present invention is characterized in that after the resin molding, a deburring process is performed and then silver plating is performed. Since the lead frame is plated with silver after removing the resin burrs, the chip adhesion (wire bonding property, die bonding property) is the same as that of the conventional lead frame without considering burrs caused by resin adhesion to unnecessary parts. I can expect. Further, when used in an optical semiconductor, a reflector effect by silver plating can be obtained.

  The pre-mold package of the present invention is a resin mold part formed of a thermosetting resin. By using a thermosetting resin as the mold resin, the resin adhesion between the resin and the lead frame is improved, and the moisture resistance is further improved.

  As described above, according to the lead frame manufacturing method of the present invention, the lead frame can be manufactured using the conventional lead frame manufacturing line, and the other non-resin sealing region (particularly, the resin sealing region). The metal film with a greater resin adhesion than the resin-encapsulated area around which resin burrs are likely to occur) improves the moisture resistance of the resin-encapsulated semiconductor device, while other non-resin encapsulation Since a metal film having a smaller adhesion than the resin sealing region is formed in the stop region, even if a resin burr is generated, the burr can be easily peeled off. Furthermore, gold, silver or solder plating performed after deburring provides bonding properties and mountability. When silver is used for the surface plating layer of the inner lead, a reflector effect can be expected when this premold package is used for an optical element. .

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(Embodiment 1)
FIG. 1 is a cross-sectional view of a semiconductor device lead frame according to the first embodiment of the present invention. Reference numeral 1 denotes a lead frame formed by pressing or etching a thin metal plate material, on which a frame portion 2 for connecting a plurality of leads, a lead portion 3 protruding inward from the frame portion 2, and a semiconductor chip are mounted. And a die pad portion 4. The lead portion 3 is divided into an inner lead 3a in the resin-sealed region 5 that is encapsulated in the sealing resin by resin sealing performed later and an outer lead 3b in the non-resin-sealed region 6 that protrudes from the sealing resin. Yes. The die pad portion 4 is divided into a die pad 4a in the resin sealing region 5 included in the sealing resin by resin sealing performed later and an outer lead 4b in the non-resin sealing region 6 protruding from the sealing resin. . A detailed configuration will be described below.

  The lead frame 1 is made of a thin metal plate material such as copper, copper alloy, iron, or iron alloy, and has a lead portion 3 and a die pad portion 4 projecting inward from the frame portion 2. For example, what gave press processing to the copper material whose plate | board thickness is about 0.15 mm-0.35 mm is mentioned. On the surface of the resin sealing region 5 of the lead frame 1, a film having better adhesion to the sealing resin than the surface of the non-resin sealing region 6 is formed. For example, a form in which a surface modification film made of a surface modifier of a silane coupling agent is formed on the surface of the resin sealing region 5 of the lead frame 1 and a simple smooth surface is formed on the surface of the non-resin sealing region 6, The form which formed 0.01 micrometer or more of silver plating films | membranes in the resin sealing area | region 5 surface of the flame | frame 1 and formed 1 micrometer of nickel plating film | membrane in the non-resin sealing area | region 6 surface is mentioned.

  According to this, unlike the conventional mechanical bonding, the resin sealing region 5 is formed by forming a chemical bond between the resin sealing region 5 and the sealing resin (not shown). The adhesiveness and airtightness between the sealing region 5 and the sealing resin can be greatly improved, and the non-resin sealing region 6 is inferior in the adhesiveness with the sealing resin compared to the resin sealing region 5. Resin burrs generated during sealing can be removed relatively easily. Furthermore, by synthesizing the surface of the resin sealing region 5 selectively in advance, a synergistic effect of mechanical bonding and chemical bonding can be achieved.

  In the first embodiment, the entire die pad 4a and the entire inner lead 3a have been described as being sealed with a sealing resin. However, as shown in FIG. If only the connecting portion connecting the lead 3b and the connecting portion connecting the die pad 4a and the outer lead 4b are used as the resin sealing region 5, the die pad 4a can be exposed from the sealing resin.

(Embodiment 2)
FIG. 2 is a cross-sectional view showing a package for a semiconductor device according to Embodiment 2 of the present invention. In FIG. 2, the same components as those in FIG. In FIG. 2, the lead frame 1 includes a frame portion 2, a lead portion 3 projecting inward from the frame portion 2, and a die pad portion 4 by pressing or etching a thin metal plate material.

  The surface of the connecting part 7 that connects the inner lead 3a and the outer lead 3b of the lead part 3 and the connecting part 7 that connects the die pad 4a and the outer lead 4b has a large adhesive force with the sealing resin. A film 8 is formed, and a first film 9 having a small adhesion to the sealing resin is formed on the inner lead 3a and the outer lead 3b and on the die pad 4a and the outer lead 4b.

  A resin envelope 10 made of silicone or epoxy resin for protecting a semiconductor element (not shown) to be mounted later is formed on the connecting portion 7 via a second film 8. At this time, examples of the second film 8 include a metal film such as gold and silver, and a surface-modified film made of a surface modifier of a silane coupling agent. The inner lead 3a and the die pad 4a are preferably a metal film that is excellent in mountability of a semiconductor element and adhesion with a fine metal wire. Examples of the first film 9 include a metal film such as nickel and a protective film made of a heat resistant tape. The outer lead 3b and the outer lead 4b are preferably made of a metal film excellent in rust prevention of the thin metal plate material of the lead frame 1 and excellent connectivity with an external circuit (not shown).

  According to this, unlike the conventional mechanical bonding, the resin sealing region 5 is formed by forming a chemical bond between the resin sealing region 5 and the sealing resin (not shown). Adhesion and airtightness between the sealing region 5 and the sealing resin (not shown) can be greatly improved, and the non-resin sealing region 6 has a sealing resin (not shown) as compared to the resin sealing region 5. The resin burrs generated during resin sealing can be removed relatively easily. Furthermore, by synthesizing the surface of the resin sealing region 5 selectively in advance, a synergistic effect of mechanical bonding and chemical bonding can be achieved.

(Embodiment 3)
3A to 3E are cross-sectional views along the manufacturing process flow of the package for a semiconductor device in the third embodiment of the present invention. 3A to 3E, the same components as those in FIGS. 1 and 2 are denoted by the same reference numerals and description thereof is omitted.

  3 (a) to 3 (d), the frame portion 2 and the frame portion 2 are inwardly formed by pressing or etching, which is a widely used thin metal plate material such as copper, copper alloy, iron or iron alloy. A protruding lead part 3 and a die pad part 4 on which a semiconductor element (not shown) is formed are formed (FIG. 3A). A nickel plating film of 0.5 to 3 μm is formed on the surface of the lead frame 1 as the first film 9 having a small adhesion with a sealing resin (not shown) (FIG. 3B).

  As a second film 8 having high adhesion to the sealing resin on the surface of the connecting portion 7 for connecting the inner lead 3a and the outer lead 3b of the lead portion 3 and the connecting portion 7 for connecting the die pad 4a and the outer lead 4b. For example, a silver plating film is selectively formed (FIG. 3C). The second film 8 can be formed by a spray plating method using masking. Through the above, the resin sealing region 5 in which the second film 8 is formed and the non-resin sealing region 6 in which the first film 9 is formed are formed. After molding a resin envelope 10 made of silicone or epoxy resin in the resin sealing region 5, a resin burr generated in the non-resin sealing region 6 using a dry blasting method or a wet blasting method, which is a known technique (not shown) Is removed (FIG. 3D).

  As a third film 11 excellent in mountability with a semiconductor element (not shown) in a region separated from the resin sealing region 5 by about 0.1 to 1.0 mm on the die pad 4a, for example, a silver plating film is 0.5 to 2 μm is selectively formed (FIG. 3C). At this time, resin burrs (not shown) generated in the non-resin sealing region 6 on the surface of the lead frame 1 can be easily removed by the action of the first film 9 having poor adhesion to the sealing resin. Can do. In addition, the resin envelope 10 formed in the resin sealing region 5 is firmly adhered and prevented from being peeled off by the action of the first film 8 having excellent adhesion to the sealing resin. . Furthermore, by synthesizing the surface of the resin sealing region 5 selectively in advance, a synergistic effect of mechanical bonding and chemical bonding can be achieved. By separating the resin sealing region 5 and the region of the third film 11 by about 0.1 to 1.0 mm, a resin burr (not shown) is formed in the third film 11 due to a molding position shift in the resin sealing process. It is not formed in this area.

 The method for manufacturing a package for a semiconductor device according to the present invention is characterized in that silver or gold plating is applied as the third film 11 after performing deburring after resin sealing. Since the third film is applied after removing the resin burrs, chip adhesiveness (wire bonding and die bonding) similar to that of conventional lead frames is expected without considering burrs caused by resin adhesion to unnecessary parts. it can. Further, when used in an optical semiconductor, a reflector effect by silver plating can be obtained. Furthermore, by using a thermosetting resin as the sealing resin, the resin adhesion between the sealing resin and the resin sealing region is improved, and the moisture resistance is greatly improved.

  According to the present invention, a lead frame having good resin adhesion between the lead frame and the mold resin and excellent in moisture resistance can be manufactured. Further, when the lead frame of the present invention is used, the deburring process for unnecessary portions can be simplified.

Sectional drawing of the lead frame for semiconductor devices in Embodiment 1 of this invention Sectional drawing of the package for semiconductor devices in Embodiment 2 of this invention Sectional drawing along the manufacturing process flow of the package for semiconductor devices in Embodiment 3 of this invention Sectional drawing which shows the manufacturing process of the conventional lead frame for semiconductor devices

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Lead frame 2 Frame part 3 Lead part 3a Inner lead 3b Outer lead 4 Die pad part 5 Resin sealing area | region 6 Non-resin sealing area | region 7 Connection part 8 2nd film | membrane 9 1st film | membrane 10 Resin envelope 11 3rd Coating 201 Lead frame 202 Die pad 203 Lead part 204 Inner lead 205 Die 206 Bottom face part 207 Punch

Claims (11)

  A frame, a plurality of lead portions projecting inwardly from the frame, and a die pad portion formed on at least one lead portion of the lead portion. Resin sealing is provided between the leading end of the lead portion and the die pad portion. In a lead frame for a semiconductor device having a stop region, a first film having a smaller adhesion with a sealing resin than the resin sealing region is formed in a non-resin sealing region of the lead portion. Lead frame for semiconductor devices.   The lead frame for a semiconductor device according to claim 1, wherein a second film having a greater adhesion to the sealing resin than the first film is formed in the resin-encapsulated region.   3. The lead frame for a semiconductor device according to claim 1, wherein the first coating is a nickel coating.   3. The lead frame for a semiconductor device according to claim 1, wherein the first film is a surface-modified film.   A frame, a plurality of lead portions projecting inwardly from the frame, a die pad portion formed on at least one lead portion of the lead portion, and a resin seal provided at a tip of the lead portion and the die pad portion In a semiconductor device package having a resin envelope in the stop region, a first film having a lower adhesion to the sealing resin is formed in the non-resin sealing region of the lead portion than in the resin sealing region. A package for a semiconductor device.   6. The package for a semiconductor device according to claim 5, wherein the resin envelope is formed in a state in which a tip end of the lead portion and the die pad portion are exposed.   7. The package for a semiconductor device according to claim 5, wherein a second film having a higher adhesive force with the sealing resin than the first film is formed in a resin sealing region. . A plurality of lead portions projecting inwardly from a frame of a metal plate material, and a step of forming a die pad portion on at least one lead portion of the lead portions;
Forming a first film on the lead portion and the die pad portion;
Forming a second film having a large adhesive force with the sealing resin compared to the first film in the resin sealing region of the lead portion;
A method of manufacturing a package for a semiconductor device, comprising: forming a resin envelope in the resin sealing region. A plurality of lead portions projecting inwardly from a frame of a metal plate material, and a step of forming a die pad portion on at least one lead portion of the lead portions;
Forming a first film on the lead portion and the die pad portion;
Forming a second film having a large adhesive force with the sealing resin compared to the first film in the resin sealing region of the lead part and the die pad part;
A method of manufacturing a package for a semiconductor device, comprising: forming a resin envelope in the resin sealing region. A plurality of lead portions projecting inwardly from a frame of a metal plate material, and a step of forming a die pad portion on at least one lead portion of the lead portions;
Forming a first film on the lead portion and the die pad portion;
Forming a second film having a large adhesive force with the sealing resin compared to the first film in the resin sealing region of the lead part and the die pad part;
The manufacturing method of the package for semiconductor devices provided with the process of shape | molding the resin envelope which exposed a part of said lead part and the said die pad part in the said resin sealing area | region. The method for manufacturing a package for a semiconductor device according to claim 10, further comprising a step of forming a third film on the lead portion and the die pad portion exposed from the resin envelope.

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