JP2006313674A - Plasma treatment device and plasma treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma treatment method and a plasma treatment device wherein the ring-like base material can be treated uniformly and efficiently. <P>SOLUTION: This method comprises a plurality of plasma treatment heads 21 to 24 having an opening where a plasmatized treated gas flows out, and a rotary table which is opposed to openings of the plasma treatment heads 21 to 24, on which a substrate 2 having a hollow part 2x is placed, and which is rotated and moves relatively to the openings of the plasma treatment heads 21 to 24. In a state that the openings of the plasma treatment heads 21 to 24 are retained at a substantially equal spacing so as to be opposed respectively to a nearly ring-like frame like part 2a of the base material 2 placed on the rotary table, the rotary table is rotated and moves relatively, and the plasmatized treated gas flowing out from the plasma treatment heads 21 to 24 is brought into contact with the frame like part 2a of the base material 2. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a plasma processing apparatus and a plasma processing method, and more particularly to a plasma processing method suitable for performing plasma processing on a workpiece at a position away from a discharge space at a substantially normal pressure.

  Conventionally, various atmospheric pressure plasma treatments have been proposed in which plasma treatment such as surface modification, thin film formation, ashing, and cleaning of an object to be processed is performed using plasma generated under a pressure near atmospheric pressure.

  For example, in the so-called remote-type atmospheric pressure plasma processing, the object to be processed is moved relative to the opening of the plasma processing head through which plasmaized processing gas flows through the discharge space and flows out from the opening. Is sequentially brought into contact with the surface of the object to be processed, thereby performing plasma treatment on the surface of the object to be processed (see, for example, Patent Document 1).

When processing a circular substrate, the substrate is rotated relative to the plasma processing head while the opening of the plasma processing head is generally opposed to the radius of the substrate, and the entire surface of the substrate is rotated. In order to uniformly process the entire surface of the substrate when sequentially facing the opening of the plasma processing head and contacting the processing gas, the size of the gap between the substrate and the opening of the plasma processing head is It has been proposed to change the position depending on the radial position of the material (see, for example, Patent Document 2).
JP 2002-237480 A JP 2000-208296 A

  In general, the linear opening of the plasma processing head is relatively moved parallel to the direction perpendicular to the opening extension direction so that the substrate is included in the locus of the opening.

  For example, as shown in FIG. 1, in the case of a ring-shaped substrate 2 having a hollow portion 2x, a plasma processing head 4 having a linear opening 4k longer than the diameter of the substrate 2 is used, as indicated by arrows 4s and 4t. In addition, the plasma-processed processing gas 7 flowing out from the opening 4k of the plasma processing head 4 is moved based on the relative movement of the positions 4a, 4b and 4c of the plasma processing head 4 with respect to the base material 2 placed on the table 8. The entire frame-like portion 2a of the material 2 is sequentially brought into contact.

  In this case, when the base material 2 becomes large, it is necessary to enlarge the plasma processing head 4, which takes a long processing time. Furthermore, since the processing gas 4 is used for parts other than the base material 2, waste of energy consumption is large.

  In view of such circumstances, the present invention intends to provide a plasma processing apparatus and a plasma processing method capable of processing a ring-shaped substrate uniformly and efficiently.

  In order to solve the above-described problems, the present invention provides a plasma processing apparatus configured as follows.

  The plasma processing apparatus includes a plurality of plasma processing heads having openings through which plasmaized processing gas flows out, and a substrate having a hollow portion facing the openings of the plasma processing heads. A rotary table that rotates relative to the opening. With the openings of the plasma processing head held at substantially equal intervals so as to face the substantially ring-shaped frame portions of the substrate placed on the turntable, the turntables are relatively The processing gas that is turned into a plasma and flows out of the opening of the plasma processing head contacts the frame-shaped portion of the base material.

  In the above configuration, the plasma processing gas flowing out from the opening may be a processing gas that is actually plasma or a processing gas activated through plasma. According to the said structure, since the frame-shaped part of a base material is processed using a some plasma processing head, processing time can be shortened. Also, other than the frame-shaped portion of the base material to be processed, that is, the opening of the plasma processing head does not face the hollow portion of the base material or the outer portion of the base material, so that processing is performed without waste. The amount used can be reduced.

  Preferably, each plasma processing head is held at a substantially equal distance from a central axis of the rotary table, and a distance from the central axis of the rotary table of each plasma processing head is changed simultaneously. Provide mechanism.

  According to the said structure, when processing the base material from which a dimension differs, since the position of a plasma processing head can be set in a short time, working efficiency improves.

  In order to solve the above-described problems, the present invention provides a plasma processing method configured as follows.

  The plasma processing method includes first to third steps. In the first step, a plurality of plasma processing heads having openings through which plasmaized processing gas flows out are arranged such that each of the openings faces a substantially ring-shaped frame-shaped portion of a substrate having a hollow portion. Hold at approximately equal intervals. In the second step, the substrate is rotationally moved relative to the opening of the plasma processing head. In the third step, the processing gas converted into plasma is caused to flow out of the opening of the plasma processing head, and is brought into contact with the frame-shaped portion of the substrate.

  In the third step, the plasma-ized processing gas that flows out from the opening may be a processing gas that has actually been converted to plasma or a processing gas that has been activated through plasma. According to the above method, since the frame-shaped portion of the substrate is processed using a plurality of plasma processing heads, the processing time can be shortened. Also, other than the frame-shaped portion of the base material to be processed, that is, the opening of the plasma processing head does not face the hollow portion of the base material or the outer portion of the base material, so that processing is performed without waste. The amount used can be reduced.

  Preferably, in the first step, the distances from the central axis of the rotary table of the plasma processing heads are simultaneously changed while holding the plasma processing heads at a substantially equal distance from the central axis of the rotary table. By doing so, the opening of the plasma processing head faces the frame-shaped portion of the base material.

  According to the above method, when processing substrates having different dimensions, the position of the plasma processing head can be set in a short time, so that work efficiency is improved.

The plasma processing method of the present invention is particularly suitable for an open system or a low airtight system of 1 Pa or higher, particularly substantially normal pressure (near atmospheric pressure), but is not limited thereto. In the present invention, “substantially normal pressure” refers to a range of 1.013 × 10 ^{4 to} 50.663 × 10 ⁴ Pa, and considering the ease of pressure adjustment and the simplification of the apparatus configuration, 1.333 × 10 ^4. ˜10.664 × 10 ⁴ Pa is preferable, and 9.331 × 10 ^{4 to} 10.397 × 10 ⁴ Pa is more preferable.

  The plasma processing apparatus and the plasma processing method of the present invention can uniformly and efficiently process a ring-shaped substrate.

  Hereinafter, examples of the present invention will be described with reference to FIGS.

  As shown in FIG. 2, the plasma processing apparatus 10 includes a supply magazine rack 14 for storing the unprocessed base material 2 and a magazine rack 16 for storing the processed base material 2 on both sides of the apparatus main body 12. Be placed. As indicated by an arrow 13, the base material 2 is transported from the supply magazine rack 14 to the main body 12 by a transport arm (not shown) and placed on the upper surface 18 a of the rotary table 18 in the apparatus main body 12. Although the details will be described later, the base material 2 placed on the upper surface 18a of the turntable 18 has openings 21k of four sets of plasma processing heads 21 to 24 (24 not shown) arranged above the turntable 18. After being plasma-treated in contact with the processing gas 17 flowing out from ˜24k (only 22k is shown), as indicated by the arrow 15, it is transported to the collecting magazine rack 16 and collected.

  The apparatus main body 12 is partitioned into an upper space 12a and a lower 12b space with the upper surface 18a of the turntable 18 as a boundary. Since the upper space 12a to which the processing gas or the like is supplied has a pressure higher than that of the lower space 12b, dust does not enter the upper space 12a from the lower space 12b in which the driving mechanism of the rotary table 18 is disposed.

  From the openings of the plasma processing heads 21 to 24, a voltage is applied to the opposing electrode pair, a discharge is generated in the space between the electrode pair, and the processing gas 17 (currently plasma is converted into plasma through the space). Or the processing gas 17 activated through plasma may flow out). For example, an alternating voltage or a pulse voltage is applied to the electrode pair to turn the processing gas into plasma. As the form of discharge, glow discharge is preferable for uniform treatment, but corona discharge, dielectric barrier discharge, and creeping discharge may be used.

  The plasma processing heads 21 to 24 may each be provided with an electrode pair so that the processing gas is converted into plasma, or the processing gas converted into plasma is supplied to the outside and flows out from the opening. .

  When the plasma-ized processing gas 17 comes into contact with the frame-shaped portion 2a of the substrate 2, the frame-shaped portion 2a is subjected to plasma such as surface modification, thin film formation, ashing, and cleaning by plasma (active species, ions, etc.) due to discharge. Processed.

  The processing gas 17 may be selected according to the purpose of the plasma processing. For example, a mixed gas of nitrogen and oxygen is used for the oxidation treatment. Nitrogen and hydrogen are used for the reduction treatment. Fluorocarbon is used for water repellency and etching. An inert gas such as nitrogen or argon may be used as the dilution gas.

  The four sets of plasma processing heads 21 to 24 are held above the rotary table 18 with a predetermined space between the plasma processing heads 21 to 24. As shown in FIG. 3, the four sets of plasma processing heads 21 to 24 are opposed to the frame-shaped portion 2 a of the ring-shaped substrate 2 placed so that the center coincides with the center axis 18 k of the rotary table 18. In this way, they are arranged every 90 degrees. Although not shown, the four sets of plasma processing heads 21 to 24 are held by a frame having substantially the same shape as the substrate 2 placed on the rotary table 18, for example.

  Each of the plasma processing heads 21 to 24 is disposed such that each opening through which the processing gas 17 flows out faces the frame-shaped portion 2 a of the base material 2, and the processing gas 17 flowing out from the opening has the frame-shaped portion of the base material 2. It comes to contact 2a. The position of the substrate 2 that faces the openings of the plasma processing heads 21 to 24 changes as the turntable 18 rotates.

  The plasma processing gas 17 flows out from the openings of the plasma processing heads 21 to 24, and the rotary table 18 is rotated by about 90 ° with respect to the plasma processing heads 21 to 24, whereby the frame-shaped portion 2a of the substrate 2 is obtained. The whole can be processed through. For uniform processing, the rotary table may be rotated by about 90 ° or more.

  The plasma processing heads 21 to 24 are arranged at equal intervals, and the size of each opening is set to be the same as the width of the frame-like portion 2a of the base material 2 so that the processing gas 17 is only the frame-like portion 2a of the base material. The waste of using the processing gas 17 in the hollow portion 2x of the substrate 2 and the outer portion of the substrate 2 can be eliminated.

  If the width of the frame-like portion 2a of the base material 2 is within the dimension range corresponding to each plasma processing head 21 to 24, and the outer dimensions of the base material 2 are different, from the central axis 18k of each plasma processing head 21 to 24 If the distance (radius) is changed, plasma treatment can be performed.

  It is preferable that the change of the position setting of the plasma processing heads 21 to 24 can be efficiently performed. For example, if a plasma processing head holding mechanism using a structure such as an umbrella, a diaphragm of a camera, a drop lid with a reduced circumference is used, as shown in FIG. Like 21s, 22s, 23s, and 24s, the positions 21a, 22a, 23a, and 24a of the plasma processing heads 21 to 24 can be simultaneously changed.

  For example, as schematically shown in FIG. 7, the plasma processing head holding mechanism moves the plurality of plasma processing heads 43 and 44 disposed above the rotary table 18 in a direction substantially perpendicular to the central axis 18 k of the rotary table 18. It is held by a slide guide mechanism (not shown) (for example, a guide bar) so as to be movable in the (substantially radial direction). Further, a coupling member 40 is disposed above the rotary table 18 so as to be movable substantially coaxially with the central axis 18k of the rotary table 18, and both ends of the arms 41, 42 are respectively connected to the coupling member 40 and each plasma processing head 43, 44 (link connection). Then, as shown by an arrow 40 s, the coupling member 40 is moved up and down by a drive mechanism (not shown) in a direction in which the coupling member 40 is in contact with and separated from the rotary table 18. As a result, as indicated by arrows 43 s and 44 s, the plasma processing heads 43 and 44 are simultaneously moved substantially in the radial direction, so that the plasma processing heads 43 and 44 are opposed to the frame-shaped portion 2 a of the substrate 2. For example, when the coupling member 40 is lowered, the plasma processing heads 43 and 44 move away from the central axis 18k of the rotary table 18, and the distance from the central axis 18k of the rotary table 18 (radial distance) increases.

  The plasma processing head is not limited to four sets, and a plurality of sets may be used. In order to process efficiently, it is preferable to arrange at equal intervals. For example, when two plasma processing heads are used, they are arranged every 180 °. The plasma processing head is preferably arranged so that the extending direction of each opening substantially overlaps with a straight line passing through the central axis of the rotary table, that is, substantially coincides with the radial direction of the annular substrate.

  However, as shown in FIG. 5, if the openings 31 a and 32 a of the plasma processing heads 31 and 32 are opposed to the frame-like portion 2 a of the substrate 2, the extending direction of the openings 31 a and 32 a and the radial direction of the substrate 2 are May not match. Further, when only a part of the frame-like portion 2a of the base material 2 is to be processed, for example, only the outer side, the opening may be opposed to only that portion.

  In addition, with respect to a substantially ring-shaped substrate such as a triangle (triangle), □ (rectangle), or polygonal frame, the opening of each plasma processing head is moved relative to the frame-shaped portion of the substrate. Similarly, plasma treatment can be performed.

  (Example) The plasma processing apparatus 10 is used to perform ashing for removing dirt on the metal ring-shaped substrate.

  FIG. 6 is a graph showing an example of the effect when ashing is performed using the plasma processing apparatus 10. The horizontal axis represents the plasma treatment time, and the vertical axis represents the contact angle for evaluating wettability. The processing time 0 is the initial state (dirty state) of the annular substrate. This annular base material is usually improved in wettability to about 40 ° by washing with an organic solvent, but has a wettability recovery action superior to that, as shown in FIG.

  (Summary) As described above, since the plasma processing apparatus 10 processes the frame-shaped portion 2a of the base 2 using the plurality of plasma processing heads 21 to 24, the processing time can be shortened. In addition, the openings of the plasma processing heads 21 to 24 do not face other than the frame-shaped portion 2a of the base material 2 to be processed, that is, the hollow portion 2x of the base material 2 or the outer portion of the base material 2 to avoid waste. No processing can be done. Since the plasma processing heads 21 to 24, 31, and 32 perform plasma processing while relatively moving along the frame-like portion 2 a of the base material 2, the annular base material 2 can be processed uniformly.

  The present invention is not limited to the above-described embodiment, and can be implemented with various modifications.

  For example, the plasma processing method of the present invention can be performed, for example, in an open system of 1 Pa or more, particularly approximately normal pressure (near atmospheric pressure) or in a low airtight system, but is not limited thereto.

It is explanatory drawing of a plasma processing. (Conventional example) It is a block diagram of a plasma processing apparatus. (Example) It is a layout view of a plasma processing head. (Example) It is a layout view of a plasma processing head. (Example) It is a layout view of a plasma processing head. (Example) It is a graph which shows the effect of a plasma processing. (Example) It is a block diagram of a plasma processing head holding mechanism. (Example)

Explanation of symbols

2 base material 2a frame-shaped part 2x hollow part 10 plasma processing apparatus 17 processing gas 18 rotary table 21-24 plasma processing head 22k opening

Claims (4)

A plurality of plasma processing heads having openings through which plasmaized processing gas flows out;
A rotating table that is opposed to the opening of the plasma processing head and on which a substrate having a hollow portion is mounted and that rotates relative to the opening of the plasma processing head;
With the openings of the plasma processing head held at substantially equal intervals so as to face the substantially ring-shaped frame portions of the substrate placed on the turntable, the turntables are relatively The plasma processing apparatus is characterized in that the processing gas that is turned into a plasma and flows out of the opening of the plasma processing head contacts the frame-like portion of the base material.   A plasma processing head holding mechanism that holds each plasma processing head at a substantially equal distance from the central axis of the rotary table and simultaneously changes the distance of each plasma processing head from the central axis of the rotary table. The plasma processing apparatus according to claim 1, wherein: A plurality of plasma processing heads having openings through which plasmaized processing gas flows out are held at substantially equal intervals so that each of the openings faces a substantially ring-shaped frame-shaped portion of a substrate having a hollow portion. 1 step,
A second step of rotating the substrate relative to the opening of the plasma processing head;
A plasma processing method, comprising: a third step of causing the processing gas converted into plasma to flow out of the opening of the plasma processing head and contacting the frame-shaped portion of the base material.   In the first step, by simultaneously changing the distances of the plasma processing heads from the central axis of the rotary table while holding the plasma processing heads at a substantially equal distance from the central axis of the rotary table. The plasma processing method according to claim 3, wherein the opening of the plasma processing head faces the frame-shaped portion of the base material.

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