JP2006310650A5 - - Google Patents

Claims (11)

A semiconductor substrate;
A first conductivity type first semiconductor region having the same conductivity type as the signal charge formed on the semiconductor substrate, and a second conductivity type formed deeper in the semiconductor substrate than the first semiconductor region. A photoelectric conversion unit configured to include a second semiconductor region;
A transfer region to which charges generated by the photoelectric conversion unit are transferred;
An element isolation region surrounding a region including the photoelectric conversion unit and the transfer region;
Is disposed below the element content releasing region, together with the second semiconductor region, and a second conductivity type of the potential barrier region surrounding at least a portion of said region,
The potential barrier region, and a plurality of barrier regions disposed at different depths from each other,
An imaging apparatus characterized by that.   The imaging apparatus according to claim 1, wherein the first semiconductor region extends below the transfer region. A channel stop region is disposed under the element isolation region,
The potential barrier region is arranged to connect the channel stop region and the second semiconductor region with a semiconductor region of a second conductivity type;
The imaging apparatus according to claim 2.   The imaging apparatus according to claim 3, wherein the potential barrier region penetrates the second semiconductor region.   The imaging device according to claim 3 or 4, wherein the barrier region disposed at a deepest position of the potential barrier region has the highest impurity concentration. An imaging device having first and second pixels formed on a semiconductor substrate,
Each of the first and second pixels has a first conductivity type first semiconductor region having the same conductivity type as a signal charge, and a first region formed deeper in the semiconductor substrate than the first semiconductor region. A photoelectric conversion unit configured to include a second conductivity type second semiconductor region;
A transfer region to which the charge generated by the photoelectric conversion unit is transferred,
The imaging device
An element isolation region disposed between the transfer region of the first pixel and the photoelectric conversion unit of the second pixel;
A potential barrier region disposed below the element isolation region,
The potential barrier region, and a plurality of barrier regions disposed at different depths from each other,
An imaging apparatus characterized by that.   The imaging apparatus according to claim 6, wherein the first semiconductor region extends below the transfer region. The second semiconductor region is disposed under the first semiconductor region;
A channel stop region is disposed under the element isolation region,
The potential barrier region is arranged to connect the channel stop region and the second semiconductor region with a semiconductor region of a second conductivity type;
The imaging apparatus according to claim 7.   The imaging device according to claim 8, wherein the potential barrier region penetrates the second semiconductor region.   10. The imaging device according to claim 8, wherein a barrier region disposed at a deepest position of the potential barrier region has the highest impurity concentration. The imaging device according to any one of claims 1 to 10,
An optical system for forming an image on an imaging surface of the imaging device;
A signal processing circuit for processing a signal output from the imaging device;
An imaging system comprising: