JP2006237412A - Method for manufacturing semiconductor device and for electronic apparatus - Google Patents
Method for manufacturing semiconductor device and for electronic apparatus Download PDFInfo
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- JP2006237412A JP2006237412A JP2005052188A JP2005052188A JP2006237412A JP 2006237412 A JP2006237412 A JP 2006237412A JP 2005052188 A JP2005052188 A JP 2005052188A JP 2005052188 A JP2005052188 A JP 2005052188A JP 2006237412 A JP2006237412 A JP 2006237412A
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- conductive particles
- photosensitive material
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- bumps
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 title claims description 15
- 239000002245 particle Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims description 30
- 229920005989 resin Polymers 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 13
- 239000004840 adhesive resin Substances 0.000 claims description 8
- 229920006223 adhesive resin Polymers 0.000 claims description 8
- 238000005507 spraying Methods 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
本発明は、半導体チップ（以下、ＩＣという）を基板に搭載し電気的な接続をとる方法、およびこの方法を用いて基板上に液晶駆動用のＩＣを搭載する液晶表示装置等の電子機器の製造方法に関するものである。さらに詳しくは、半導体チップの電極となるバンプに選択的に導電粒子を保持させた状態で、基板との電気的な接続信頼性向上に関するものである。 The present invention relates to a method of mounting a semiconductor chip (hereinafter referred to as an IC) on a substrate to make an electrical connection, and an electronic device such as a liquid crystal display device in which an IC for driving a liquid crystal is mounted on the substrate using this method. It relates to a manufacturing method. More specifically, the present invention relates to an improvement in the reliability of electrical connection with a substrate in a state where conductive particles are selectively held on bumps serving as electrodes of a semiconductor chip.
従来のフェイスダウン方式でＩＣを基板上に実装する方法としては、異方性導電膜を用いた接合方法がある。電極を配した基板上に異方性導電膜を搭載し、基板上電極とＩＣの接続端子を位置合せし、ＩＣ上面部から圧着ヘッドによって基板に向けて圧着する。ＩＣと基板の間に挟まれた異方性導電膜は加熱・加圧により反応硬化し接続を完了する。 As a conventional method for mounting an IC on a substrate by a face-down method, there is a bonding method using an anisotropic conductive film. An anisotropic conductive film is mounted on the substrate on which the electrodes are arranged, the electrodes on the substrate and the connection terminals of the IC are aligned, and crimped from the upper surface of the IC toward the substrate by the crimping head. The anisotropic conductive film sandwiched between the IC and the substrate is reacted and cured by heating and pressing to complete the connection.
しかしながら、異方性導電膜は導電粒子を分散させた状態であるため、樹脂層内でのムラや溜まりなどにより、基板上電極とＩＣ電極との接続に寄与する粒子数にバラツキが生じる。接続性を向上させるためには導電粒子の密度を上げる、もしくは粒径サイズを大きくするとなるが、その場合トレードオフの関係で、電極間の絶縁性が劣化する。特に今後の微細ピッチ化が進むことで、接続性と絶縁性のトレードオフの関係はさらに問題となってくる。 However, since the anisotropic conductive film is in a state where conductive particles are dispersed, the number of particles contributing to the connection between the electrode on the substrate and the IC electrode varies due to unevenness or accumulation in the resin layer. In order to improve the connectivity, the density of the conductive particles is increased or the particle size is increased, but in this case, the insulation between the electrodes deteriorates due to a trade-off relationship. In particular, as the pitch becomes finer in the future, the trade-off relationship between connectivity and insulation becomes a further problem.
本発明は、半導体ウェハ状態で導電粒子を散布し、バンプ上に選択的に導電粒子を保持させた状態で感光材を剥離し、基板との接続を実施する。 In the present invention, conductive particles are dispersed in a semiconductor wafer state, the photosensitive material is peeled off in a state where the conductive particles are selectively held on the bumps, and connection with the substrate is performed.
本発明は、導電粒子を半導体チップの電極となるバンプに選択的に保持させた状態で、基板との接続が実施できるので、接続性および絶縁性ともに信頼性向上させるという効果がある。 According to the present invention, since the conductive particles can be connected to the substrate in a state where the conductive particles are selectively held on the bumps serving as the electrodes of the semiconductor chip, there is an effect that both the connectivity and the insulation are improved.
本発明は、半導体チップと基板との接続に関して、半導体ウェハ状態で導電粒子を散布し、バンプ上に選択的に導電粒子を保持させた状態で感光材を剥離する。その後ウェハから分割された半導体チップを基板へ接続することで、接続性と絶縁性ともに信頼性向上させる効果が得られる。 In the present invention, with respect to the connection between the semiconductor chip and the substrate, conductive particles are dispersed in a semiconductor wafer state, and the photosensitive material is peeled off while the conductive particles are selectively held on the bumps. Then, by connecting the semiconductor chip divided from the wafer to the substrate, the effect of improving the reliability of both connectivity and insulation can be obtained.
すなわち、本発明の電子機器の製造方法は、半導体ウェハの電極部に形成されたバンプ上に選択的に導電粒子を付着させる第一工程と、半導体ウェハを分割して半導体チップを形成する第二工程と、基板に形成された電極と半導体チップのバンプとを、接合材料を介して位置合せする第三工程と、接合材料を用いて半導体チップと基板を接続する工程を備えている。 That is, the method for manufacturing an electronic device according to the present invention includes a first step of selectively attaching conductive particles on bumps formed on an electrode portion of a semiconductor wafer, and a second step of dividing the semiconductor wafer to form a semiconductor chip. A step, a third step of aligning the electrodes formed on the substrate and the bumps of the semiconductor chip via the bonding material, and a step of connecting the semiconductor chip and the substrate using the bonding material.
さらに、この第一工程が、半導体ウェハ上に電極部を形成する工程と、半導体ウェハに感光材を塗布し、電極部の位置の感光材を除去する工程と、電極部の位置に選択的にバンプを形成する工程と、バンプと感光材上に導電粒子を設ける工程と、感光材を剥離する工程を含んでいる。 Furthermore, the first step is a step of forming an electrode portion on the semiconductor wafer, a step of applying a photosensitive material to the semiconductor wafer and removing the photosensitive material at the position of the electrode portion, and selectively at the position of the electrode portion. It includes a step of forming a bump, a step of providing conductive particles on the bump and the photosensitive material, and a step of peeling the photosensitive material.
さらに、導電粒子を設ける工程が、バンプと感光材上に接着性を有する樹脂を塗布する工程と、樹脂上に導電粒子を散布する工程を含んでいる。あるいは、導電粒子を設ける工程が、バンプと感光材上に接着性を有する導電粒子を散布する工程であることとした。ここで用いた接着性を有する導電粒子が、導電粒子と接着性を有する樹脂を攪拌させることにより作製されている。 Further, the step of providing the conductive particles includes a step of applying an adhesive resin on the bump and the photosensitive material, and a step of spraying the conductive particles on the resin. Alternatively, the step of providing the conductive particles is a step of spraying conductive particles having adhesiveness on the bump and the photosensitive material. The conductive particles having adhesiveness used here are produced by stirring the conductive particles and a resin having adhesiveness.
また、本発明の半導体装置の製造方法は、半導体ウェハ上に電極部を形成する工程と、半導体ウェハに感光材を塗布し、電極部の位置の感光材を除去する工程と、電極部の位置に選択的にバンプを形成する工程と、バンプと感光材上に導電粒子を設ける工程と、感光材を剥離する工程と、を用いた製造方法である。 The method for manufacturing a semiconductor device of the present invention includes a step of forming an electrode portion on a semiconductor wafer, a step of applying a photosensitive material to the semiconductor wafer and removing the photosensitive material at the position of the electrode portion, and a position of the electrode portion. And a step of selectively forming bumps, a step of providing conductive particles on the bumps and the photosensitive material, and a step of peeling the photosensitive material.
本発明の実施例を図面に基づいて説明する。図１は本実施例によるバンプ構造の製造方法を示すフロー図である。図示するように、まず、バリアメタル３と電極パッド２が設けられたウェハ１の上面に感光レジスト４を塗布する。この感光レジスト４は半導体装置の製造工程において一般的に使用されているものである。感光レジスト４を塗布したウェハ１を、マスクを用いて露光した後現像し、電極パッド２の真上部の感光レジスト４に開口部５を形成する。次にウェハ１を電気めっき行い、電極パッド２のこの開口部にバンプ６を形成する。次に、感光レジスト４に接着性を有する樹脂７を塗布する。ここで使用する樹脂７は熱硬化性のエポキシ樹脂、もしくはＵＶ硬化性のアクリル樹脂などである。次に接着性の樹脂上に導電粒子８を散布する。導電粒子８はプラスチック製の粒子にニッケルめっきと金めっきを施したもの、もしくはニッケル粒子などである。散布後に接着性の樹脂７を硬化させる。樹脂７を硬化させたウェハ１の感光レジスト４を剥離除去し、バリアメタル３をエッチングにより除去する。このような工程によりえられたウェハを図２に示す。図示するように、ウェハ１電極パッド２上に形成されたバンプ６上に導電粒子８が選択的に保持した構成となっている。このような構成のウェハ１を所定のサイズにダイシングして半導体チップ（以下、ＩＣという）が得られる。
Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a flowchart showing a bump structure manufacturing method according to this embodiment. As shown in the figure, first, a photosensitive resist 4 is applied to the upper surface of the
次に、このようにして形成された半導体チップを液晶表示素子に実装して液晶表示装置を作製する方法について図３を用いて説明する。図３（ａ）に示すように、バンプ上に表面に導電粒子が付着したバンプを有する液晶駆動用ＩＣ１２をＩＣ搭載圧着ヘッド１３で保持し、液晶表示素子を構成する基板９上の透明電極１０を、接合材料１１を介して位置合せする。図３（ｂ）に示すように、その状態で液晶駆動用ＩＣ１２の上面部から搭載圧着ヘッド１３により圧着が実施される。ＩＣ１２と透明電極１０との間のＩＣ実装領域に挟まれた接合材料１１は圧着の際の加熱加圧により反応硬化する。こうして、図２（ｃ）にしめすようなＩＣ１２と基板９の電気的かつ機械的な接続がなされる。このように、導電粒子８をＩＣ１２の電極となるバンプ６に選択的に保持させた状態で、基板との接続が実施できるので、接続信頼性を得る為の確実な粒子数で接続でき、絶縁信頼性へ影響するバンプ間の導電粒子によるリーク発生も防止できる。
Next, a method for manufacturing a liquid crystal display device by mounting the semiconductor chip thus formed on a liquid crystal display element will be described with reference to FIGS. As shown in FIG. 3 (a), a liquid
本実施例による半導体装置の製造方法を図４に基づいて説明する。ここでは、実施例１と同一部分には同一番号を付して詳細な説明を省略する。本実施例は電気めっきにて電極パッド２にバンプ６を形成するまでは実施例１と同様である。
A method of manufacturing the semiconductor device according to this embodiment will be described with reference to FIG. Here, the same parts as those in the first embodiment are denoted by the same reference numerals and detailed description thereof is omitted. This example is the same as Example 1 until the
次に、接着性有する樹脂７に導電粒子８を混入させ、攪拌する。これにより、樹脂中に導電粒子８を分散させる。ここで使用する樹脂７は熱硬化性のエポキシ樹脂、もしくはＵＶ硬化性のアクリル樹脂などである。接着性を有する樹脂７と攪拌された導電粒子８をウェハ１上に塗布する。導電粒子８はプラスチック製の粒子にニッケルめっきと金めっきを施したもの、もしくはニッケル粒子などである。散布後は接着性の樹脂７を硬化させる。次に、接着性の樹脂７を硬化させたウェハ１の感光レジスト４を剥離除去し、バリアメタル３をエッチングにより除去する。以降も実施例１と同じなので、詳細は省略する。
Next, the
ＩＣを基板上に搭載し電気的に接続する工程であれば、液晶表示装置に限らず、その他の装置におけるＩＣの搭載に本発明を適用してもよい。また、ＩＣの搭載方法としては、接続材料として、異方性導電膜、熱硬化樹脂、ＵＶ樹脂などによる搭載方法にも本発明を適用することができる。また、基板としては透明電極を有するガラス、アルミ配線を有するガラス、フィルム基板、ガラスエポキシ樹脂基板などにも本発明を適用することができる。 The present invention may be applied not only to the liquid crystal display device but also to the mounting of the IC in other devices as long as the IC is mounted on the substrate and electrically connected. Further, as an IC mounting method, the present invention can be applied to a mounting method using an anisotropic conductive film, a thermosetting resin, a UV resin, or the like as a connection material. Further, the present invention can be applied to a glass having a transparent electrode, a glass having an aluminum wiring, a film substrate, a glass epoxy resin substrate, and the like as a substrate.
１ ウェハ
２ 電極パッド
３ バリアメタル
４ 感光レジスト
５ 開口部
６ バンプ
７ 樹脂
８ 導電粒子
９ ガラス基板
１０ 透明電極
１１ 接合材料
１２ ＩＣ
１３ ＩＣ搭載圧着ヘッド
DESCRIPTION OF
13 IC mounting crimp head
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005052188A JP2006237412A (en) | 2005-02-28 | 2005-02-28 | Method for manufacturing semiconductor device and for electronic apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005052188A JP2006237412A (en) | 2005-02-28 | 2005-02-28 | Method for manufacturing semiconductor device and for electronic apparatus |
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| JP2006237412A true JP2006237412A (en) | 2006-09-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2005052188A Withdrawn JP2006237412A (en) | 2005-02-28 | 2005-02-28 | Method for manufacturing semiconductor device and for electronic apparatus |
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| Country | Link |
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| JP (1) | JP2006237412A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010531003A (en) * | 2007-05-25 | 2010-09-16 | ジエマルト・エス・アー | Method for processing application commands from physical channels using portable electronic devices and corresponding devices and systems |
| KR101309319B1 (en) * | 2006-11-22 | 2013-09-13 | 삼성디스플레이 주식회사 | Driving circuit, method of manufacturing thereof and liquid crystal display apparatus having the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0562981A (en) * | 1991-06-18 | 1993-03-12 | Oki Electric Ind Co Ltd | Method of forming protrudent electrode of semiconductor element and connection method thereof |
| JP2002111178A (en) * | 2000-09-29 | 2002-04-12 | Toshiba Corp | Method of forming conductive portion and semiconductor device |
| JP2004296692A (en) * | 2003-03-26 | 2004-10-21 | Seiko Epson Corp | Electronic component manufacturing method, electronic component, electronic component mounting method, and electronic device |
-
2005
- 2005-02-28 JP JP2005052188A patent/JP2006237412A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0562981A (en) * | 1991-06-18 | 1993-03-12 | Oki Electric Ind Co Ltd | Method of forming protrudent electrode of semiconductor element and connection method thereof |
| JP2002111178A (en) * | 2000-09-29 | 2002-04-12 | Toshiba Corp | Method of forming conductive portion and semiconductor device |
| JP2004296692A (en) * | 2003-03-26 | 2004-10-21 | Seiko Epson Corp | Electronic component manufacturing method, electronic component, electronic component mounting method, and electronic device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101309319B1 (en) * | 2006-11-22 | 2013-09-13 | 삼성디스플레이 주식회사 | Driving circuit, method of manufacturing thereof and liquid crystal display apparatus having the same |
| JP2010531003A (en) * | 2007-05-25 | 2010-09-16 | ジエマルト・エス・アー | Method for processing application commands from physical channels using portable electronic devices and corresponding devices and systems |
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