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JP2006229162A - Substrate and manufacturing method thereof - Google Patents

Substrate and manufacturing method thereof Download PDF

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Publication number
JP2006229162A
JP2006229162A JP2005044614A JP2005044614A JP2006229162A JP 2006229162 A JP2006229162 A JP 2006229162A JP 2005044614 A JP2005044614 A JP 2005044614A JP 2005044614 A JP2005044614 A JP 2005044614A JP 2006229162 A JP2006229162 A JP 2006229162A
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hole
plating layer
copper plating
insulating base
base material
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JP4699043B2 (en
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Toshio Owaki
敏男 大脇
Mitsuru Koyama
充 小山
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Daisho Denshi Co Ltd
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Daisho Denshi Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • H01L2924/15155Shape the die mounting substrate comprising a recess for hosting the device the shape of the recess being other than a cuboid
    • H01L2924/15156Side view

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Abstract

【課題】 赤外線の所望の反射率を得るためにテーパ状の収容凹部を形成する場合であっても、後に載置される発光素子を水平に載置させることを可能にした基板及びその製造方法を提供する。
【解決手段】 発光素子17を収容するためのテーパ状のパラボラ収容凹部7を有する絶縁基材2であって、パラボラ収容凹部7の底部9の少なくとも中央部が、貫通孔5に充填された銅ペースト6で形成されている。
【選択図】 図1
PROBLEM TO BE SOLVED: To provide a substrate capable of horizontally mounting a light emitting element to be mounted later even when a tapered housing recess is formed in order to obtain a desired infrared reflectance, and a method for manufacturing the same I will provide a.
SOLUTION: An insulating base material 2 having a tapered parabolic housing recess 7 for housing a light emitting element 17, wherein at least a central portion of a bottom portion 9 of the parabolic housing recess 7 is filled with a through hole 5. It is formed of paste 6.
[Selection] Figure 1

Description

本発明は、基板及びその製造方法に関するものである。   The present invention relates to a substrate and a manufacturing method thereof.

近年、赤外線通信(IrDA)が注目を集めている。赤外線通信は、赤外線発光素子からの光信号を受光手段により受信することにより、結線を用いることなく、且つ外部光による影響が少ない状態で、信号の伝達ができるというもので、赤外線通信装置を搭載した携帯電話も多く見受けられる。また、赤外線通信を用いた無線電子決済システムが標準化されたため、さらに重要度が増してきている。   In recent years, infrared communication (IrDA) has attracted attention. Infrared communication is an optical communication system that can receive signals without receiving connections by receiving light signals from infrared light emitting elements with light receiving means, and with little influence from external light. Many mobile phones have been found. In addition, since the wireless electronic payment system using infrared communication has been standardized, the importance is further increased.

このような赤外線通信装置において、赤外線を発光する発光素子を絶縁基材に設ける場合、通常、絶縁基材の表面に載置させて設けられている。(特許文献1参照)
特開2001−160631号公報
In such an infrared communication device, when a light emitting element that emits infrared light is provided on an insulating base material, the light emitting element is usually placed on the surface of the insulating base material. (See Patent Document 1)
JP 2001-160631 A

また、図10に示すように、絶縁基材72に厚さ方向に凹むテーパ状の収容凹部73を座ぐり加工で形成し、その後絶縁基材72をめっき層3で被覆して、収容凹部73の底部73aのめっき層3上に発光素子71を載置させることが行われている。これは、収容凹部73のテーパ状の内周面73bを利用して赤外線を反射させて、より集光効率を向上させようとするものである。
しかし、絶縁基材72はガラスクロスを含んでおり硬いため、座ぐり加工を行ったときに、絶縁基材72に当たっているだけの状態となる座ぐり加工器具の切削刃の中心は、加工されにくい。このため、底部73aの中心部に削り残しができてしまい、図10に示すような突起部70ができてしまうことがある。このように、突起部70ができると底部73aが平坦ではなくなり、その上のめっき層3も突起部74を有することになり平坦でなくなるため、発光素子71を水平に載置させることができなくなってしまう。
Further, as shown in FIG. 10, a tapered housing recess 73 that is recessed in the thickness direction is formed in the insulating base material 72 by spot facing, and then the insulating base material 72 is covered with the plating layer 3, and the housing recess 73 is formed. The light emitting element 71 is placed on the plating layer 3 on the bottom 73a of the substrate. This is intended to improve the light collection efficiency by reflecting infrared rays using the tapered inner peripheral surface 73b of the housing recess 73.
However, since the insulating base material 72 contains glass cloth and is hard, the center of the cutting blade of the counterbore processing tool that is in a state of being only in contact with the insulating base material 72 when the counterbore processing is performed is difficult to be processed. . For this reason, an uncut portion can be left at the center of the bottom 73a, and a protrusion 70 as shown in FIG. 10 may be formed. As described above, when the protrusion 70 is formed, the bottom 73a is not flat, and the plating layer 3 on the bottom 73a also has the protrusion 74 and is not flat. Therefore, the light emitting element 71 cannot be placed horizontally. End up.

本発明は、かかる従来技術の問題点を解決するものであって、その目的とするところは、赤外線の所望の反射率を得るためにテーパ状の収容凹部を形成する場合であっても、後に載置される発光素子を水平に載置させることを可能にした基板及びその製造方法を提供することを目的とする。   The present invention solves the problems of the prior art, and the object of the present invention is to form a taper-shaped recess in order to obtain a desired infrared reflectance. It is an object of the present invention to provide a substrate capable of horizontally mounting a light emitting element to be mounted and a manufacturing method thereof.

上記目的を達成するために、請求項1に係る発明は、発光素子を収容するためのテーパ状の収容凹部を有する基板であって、前記収容凹部の底部の少なくとも中央部が、穴部に充填された充填剤で形成されていることを特徴とする。   In order to achieve the above object, the invention according to claim 1 is a substrate having a tapered housing recess for housing a light emitting element, wherein at least a central portion of the bottom of the housing recess fills the hole. It is formed with the made filler.

請求項2に係る発明は、請求項1に係る発明において、前記穴部は、貫通孔であることを特徴とする。   The invention according to claim 2 is the invention according to claim 1, wherein the hole is a through hole.

請求項3に係る発明は、発光素子を収容するためのテーパ状の収容凹部を有する基板の製造方法において、絶縁基材に穴部を形成する穴部形成工程と、前記穴部に充填剤を充填させて穴埋めする穴埋め工程と、前記穴部内に底部の中央部が位置するように前記収容凹部を座ぐり加工によって形成する収容凹部形成工程とを有することを特徴とする。   According to a third aspect of the present invention, there is provided a method for manufacturing a substrate having a tapered housing recess for housing a light emitting element, a hole forming step for forming a hole in an insulating base material, and a filler in the hole. A filling step of filling and filling the hole, and a housing recess forming step of forming the housing recess by counterboring so that the center of the bottom is located in the hole.

請求項1に係る発明によれば、収容凹部は、その底部の中央部が穴部内に充填された充填剤で形成されていることから、座ぐり加工を施しやすく、中央部に突起部のない平坦な底部を形成することができる。したがって、収容凹部の底部に発光素子を水平な状態で設けることができる。   According to the first aspect of the present invention, since the central portion of the bottom portion of the receiving concave portion is formed of the filler filled in the hole portion, it is easy to carry out counterbore processing, and there is no protrusion at the central portion. A flat bottom can be formed. Therefore, the light emitting element can be provided in a horizontal state at the bottom of the housing recess.

請求項2に係る発明によれば、穴部が貫通孔であるため、穴部内の空気を逃がしながら充填剤を穴部に充填することができる。したがって、穴部内に隙間なく充填剤を充填させることができる。   According to the invention which concerns on Claim 2, since a hole is a through-hole, a filler can be filled into a hole, releasing the air in a hole. Therefore, the filler can be filled in the hole without any gap.

請求項3に係る発明によれば、絶縁基材に穴部を形成し、その内部に充填剤を充填させて穴埋めした後、絶縁基板に座ぐり加工を施して収容凹部を、底部の中央部が穴部内に位置するように形成する。このとき、穴部内には充填剤が充填されているので座ぐり加工を施し易く、収容凹部の底部の中心部に突起部を生じさせることなく平坦に形成することができる。したがって、収容凹部の底部に発光素子を水平な状態で設けることができる。   According to the invention of claim 3, after forming a hole in the insulating base material, filling the inside with a filler and filling the hole, the insulating substrate is subjected to counterboring, so that the housing recess is formed at the center of the bottom. Is formed so as to be located in the hole. At this time, since the hole is filled with the filler, it is easy to carry out a spot facing process, and it can be formed flat without causing a projection at the center of the bottom of the housing recess. Therefore, the light emitting element can be provided in a horizontal state at the bottom of the housing recess.

以下、本発明の一実施形態について、図1〜図8に基づいて説明する。
図1に示すように、本実施形態の赤外線通信モジュール基板1(基板)は、絶縁基材(基材)2を有している。この絶縁基材2は、樹脂とガラスクロスとの複合材料から成るもので、樹脂を含浸させたガラスクロスを層状にすることで、所定の厚さの板状に形成されている。
DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, an embodiment of the invention will be described with reference to FIGS.
As shown in FIG. 1, the infrared communication module substrate 1 (substrate) of this embodiment has an insulating base material (base material) 2. The insulating base 2 is made of a composite material of resin and glass cloth, and is formed into a plate shape having a predetermined thickness by layering a glass cloth impregnated with resin.

そして、絶縁基材2には、その上面2aからその厚さ方向に沿って所定の深さで凹むテーパ状のパラボラ収容凹部7(収容凹部)が、座ぐり加工によって所定の数形成されている。このパラボラ収容凹部7は、下方にいくにつれて径が小さくなるように形成され、その底部9の底面9Aは、絶縁基材2の上面2aと平行になっている。このパラボラ収容凹部7の内周面7bは、水平面に対して40°〜50°の範囲内の角度θで傾斜している。   And the insulating base material 2 is formed with a predetermined number of tapered parabolic accommodation recesses 7 (accommodation recesses) recessed from the upper surface 2a along the thickness direction at a predetermined depth by counterbore processing. . The parabolic housing recess 7 is formed so that its diameter decreases as it goes downward, and the bottom surface 9 </ b> A of the bottom portion 9 is parallel to the top surface 2 a of the insulating substrate 2. The inner peripheral surface 7b of the parabolic accommodation recess 7 is inclined at an angle θ within a range of 40 ° to 50 ° with respect to the horizontal plane.

このような、パラボラ収容凹部7の底部9には、絶縁基材2の厚さ方向において、底部9の底面9Aから絶縁基材2の下面2bへと貫通する円筒状の貫通孔5(穴部)が底面9Aと同軸に穿設されている。この貫通孔5は、その孔径が底部9の底面9Aの径よりも小径とされている。なお、貫通孔5をパラボラ収容凹部7の中央部を含むように形成すれば、必ずしも底面9Aと同軸に形成する必要はない。   In the bottom portion 9 of the parabolic housing recess 7, a cylindrical through-hole 5 (hole portion) penetrating from the bottom surface 9 </ b> A of the bottom portion 9 to the lower surface 2 b of the insulating substrate 2 in the thickness direction of the insulating substrate 2. ) Is drilled coaxially with the bottom surface 9A. The through hole 5 has a diameter smaller than the diameter of the bottom surface 9 </ b> A of the bottom portion 9. Note that if the through hole 5 is formed so as to include the central portion of the parabolic housing recess 7, it is not necessarily formed coaxially with the bottom surface 9A.

そして、絶縁基材2の上面2aには、パラボラ収容凹部7の開口部8を形成する一次銅めっき層3Bが形成されている。さらに、貫通孔5の内周面には、一次銅めっき層3Aが形成されており、この一次銅めっき層3Aは、絶縁基材2の下面2bにおける貫通孔5の開口部周縁に形成されている一次銅めっき層3Cと一体となっている。これら一次銅めっき層3A,3B,3Cは、均一な厚さで形成されており、その厚さは絶縁基材2上の導通性を確保できる厚さとなっている。このとき、パラボラ収容凹部7には、一次銅めっき層は形成されていない。   A primary copper plating layer 3 </ b> B that forms the opening 8 of the parabolic accommodation recess 7 is formed on the upper surface 2 a of the insulating base 2. Further, a primary copper plating layer 3 </ b> A is formed on the inner peripheral surface of the through hole 5, and this primary copper plating layer 3 </ b> A is formed on the periphery of the opening of the through hole 5 in the lower surface 2 b of the insulating base 2. It is integrated with the primary copper plating layer 3C. These primary copper plating layers 3 </ b> A, 3 </ b> B, 3 </ b> C are formed with a uniform thickness, and the thickness is such that the electrical conductivity on the insulating base 2 can be ensured. At this time, the primary copper plating layer is not formed in the parabolic housing recess 7.

貫通孔5の内部には、一次銅めっき層3Aの内側に銅粒子を含んだ樹脂から成る銅ペースト6(充填剤)が隙間なく充填されている。この銅ペースト6の上面6cは、パラボラ収容凹部7の底部9の底面9Aと面一となっており、底部9は全体的に平坦を成している。また、銅ペースト6の下面6bは、一次銅めっき層3Cの下面と面一となっている。   The through-hole 5 is filled with a copper paste 6 (filler) made of a resin containing copper particles inside the primary copper plating layer 3A without any gaps. The upper surface 6c of the copper paste 6 is flush with the bottom surface 9A of the bottom 9 of the parabolic housing recess 7, and the bottom 9 is entirely flat. Further, the lower surface 6b of the copper paste 6 is flush with the lower surface of the primary copper plating layer 3C.

そして、銅ペースト6の上面6c、パラボラ収容凹部7の内周面7b及び一次銅めっき層3Bの表面には、これらを被覆する二次銅めっき層4Aが一体的に形成されている。また、銅ペースト6の下面6b及び一次銅めっき層3Cの表面には、これらを共に被覆する二次銅めっき層4Cが形成されている。これらの二次銅めっき層4A,4Cも、上記一次銅めっき層3A,3B,3Cと同様に均一な厚さで形成されている。   A secondary copper plating layer 4A is integrally formed on the upper surface 6c of the copper paste 6, the inner peripheral surface 7b of the parabolic housing recess 7 and the surface of the primary copper plating layer 3B. Further, a secondary copper plating layer 4C that covers both the lower surface 6b of the copper paste 6 and the surface of the primary copper plating layer 3C is formed. These secondary copper plating layers 4A and 4C are also formed with a uniform thickness similarly to the primary copper plating layers 3A, 3B and 3C.

そして、絶縁基材2の上面2a側において、二次銅めっき層4Aの表面には、ニッケル層11及び金めっき層18が積層形成されている。詳しくは、二次銅めっき層4Aの上にニッケル層11が形成されており、ニッケル層11の上に金めっき層18が形成されている。この金めっき層18の厚さは、赤外線を均一に反射可能な厚さとなっている。   Then, on the upper surface 2a side of the insulating base material 2, a nickel layer 11 and a gold plating layer 18 are laminated on the surface of the secondary copper plating layer 4A. Specifically, the nickel layer 11 is formed on the secondary copper plating layer 4 </ b> A, and the gold plating layer 18 is formed on the nickel layer 11. The thickness of the gold plating layer 18 is a thickness capable of uniformly reflecting infrared rays.

また、絶縁基材2の下面2b側においては、上記のように貫通孔5の開口部周縁を被覆する一次銅めっき層3Cと、この一次銅めっき層3Cの表面及び銅ペースト6の下面6bとを被覆する二次銅めっき層4Cが形成されており、これらを完全に被覆するように、感光性レジスト層12が絶縁基材2の下面2bに塗布されている。
そして、発光素子17が上記パラボラ収容凹部7の底面9A上の金めっき層18の上に搭載される。このとき発光素子17のワイヤをニッケル層11及び金めっき層18に打ち込む。
Further, on the lower surface 2b side of the insulating base 2, the primary copper plating layer 3C covering the periphery of the opening of the through hole 5 as described above, the surface of the primary copper plating layer 3C, and the lower surface 6b of the copper paste 6 A secondary copper plating layer 4C is formed on the lower surface 2b of the insulating substrate 2 so as to completely cover them.
Then, the light emitting element 17 is mounted on the gold plating layer 18 on the bottom surface 9 </ b> A of the parabolic accommodation recess 7. At this time, the wire of the light emitting element 17 is driven into the nickel layer 11 and the gold plating layer 18.

次に、上記した赤外線通信モジュール基板1の製造方法について説明する。
図2に示すように、ガラスクロスを含む絶縁基材2に、その厚さ方向に貫通する貫通孔5を打ち抜き法で形成する(穴部形成工程)。この貫通孔5は、互いに所定の間隔をおいて所定の数形成される。
Next, a method for manufacturing the infrared communication module substrate 1 will be described.
As shown in FIG. 2, the through-hole 5 penetrating in the thickness direction is formed in the insulating base material 2 including the glass cloth by a punching method (hole forming step). A predetermined number of the through holes 5 are formed at predetermined intervals.

そして、図3に示すように、貫通孔5の内周面を含む絶縁基材2の表面に、無電解銅めっき法によって第1の銅めっき処理を施して、一次銅めっき層3を均一な厚さで形成する。   And as shown in FIG. 3, the 1st copper plating process is given to the surface of the insulation base material 2 containing the internal peripheral surface of the through-hole 5 by the electroless copper plating method, and the primary copper plating layer 3 is made uniform. Form with thickness.

続いて、図4に示すように、一次銅めっき層3が形成された貫通孔5を穴埋めするようにして、その内部に銅ペースト6を充填させる(穴埋め工程)。このとき、銅ペースト6は、その上面6a及び下面6bが、絶縁基材2の上面2a及び下面2bに施された一次銅めっき層3の表面と面一と成るように充填する。   Subsequently, as shown in FIG. 4, the through-hole 5 in which the primary copper plating layer 3 is formed is filled, and the copper paste 6 is filled therein (hole filling step). At this time, the copper paste 6 is filled so that the upper surface 6a and the lower surface 6b thereof are flush with the surface of the primary copper plating layer 3 applied to the upper surface 2a and the lower surface 2b of the insulating base 2.

次に、図5に示すように、座ぐり用ビット13(座ぐり加工器具)を用いて、絶縁基材2の厚さ方向に座ぐり加工を施し、パラボラ収容凹部7を形成する(収容凹部形成工程)。   Next, as shown in FIG. 5, using a counterbore bit 13 (a counterbore processing tool), a counterboring process is performed in the thickness direction of the insulating base material 2 to form a parabolic housing recess 7 (a housing recess). Forming step).

ここで、座ぐり用ビット13には、側面視略円錐状の先端部13aが形成されており、この先端部13aの先端には、端部13bが座ぐり用ビット13の軸心Lに沿う方向に対して垂直に設けられている。この端部13b上において、軸心Lと端部13bとが交わる交点13Aは、端部13bの中心部と水平方向で一致していないため、先端13aにおける左右の傾斜面13c,13dは、水平面に対する傾斜角度がそれぞれ異なっている。このうち、端部13bに対して急な傾斜となっている傾斜面13c側に、切削刃14が設けられている。また、この傾斜面13cの傾斜角度θ1は、水平面から40°〜50°とされている。   Here, the counterbore bit 13 is formed with a tip portion 13a having a substantially conical shape in a side view, and an end portion 13b extends along the axis L of the counterbore bit 13 at the tip of the tip portion 13a. It is provided perpendicular to the direction. On this end portion 13b, the intersection 13A where the axis L and the end portion 13b intersect does not coincide with the center portion of the end portion 13b in the horizontal direction, so the left and right inclined surfaces 13c and 13d at the tip 13a are horizontal surfaces. The inclination angle with respect to is different. Among these, the cutting blade 14 is provided on the inclined surface 13c side that is steeply inclined with respect to the end portion 13b. In addition, the inclination angle θ1 of the inclined surface 13c is set to 40 ° to 50 ° from the horizontal plane.

このような座ぐり用ビット13を絶縁基材2の上面2aに対して垂直にするとともに、座ぐり用ビット13の交点13Aをその上面2aにおける貫通孔5の中心部分、つまり、銅ペースト6の部分に位置させる。この状態で、座ぐり用ビット13を軸心Lを中心として回転させると、軸心Lから離れている傾斜面13c側が外側となって回転し、傾斜面13cに設けられた切削刃14及び端部13bが、絶縁基材2及び銅ペースト6をこれらの厚さ方向へと切削していくことで、パラボラ収容凹部7が形成されることになる(収容凹部形成工程)。このとき、絶縁基材2と座ぐり用ビット13の傾斜面13dとが接触することはなく、相互間には隙間が設けられることになる。この隙間から、切削刃14及び端部13bで絶縁基材2を切削するときに出る切くずを絶縁基材2の上面2aへと随時排出させながら、絶縁基材2を所定の深さまで切削していく。   Such a counterbore bit 13 is made perpendicular to the upper surface 2a of the insulating base 2, and the intersection 13A of the counterbore bit 13 is set at the center of the through hole 5 in the upper surface 2a, that is, the copper paste 6 Locate in the part. In this state, when the counterbore bit 13 is rotated about the axis L, the inclined surface 13c side away from the axis L rotates on the outside, and the cutting blade 14 and the end provided on the inclined surface 13c are rotated. The parabola accommodation recessed part 7 will be formed because the part 13b cuts the insulating base material 2 and the copper paste 6 in these thickness directions (accommodation recessed part formation process). At this time, the insulating base 2 and the inclined surface 13d of the counterbore bit 13 do not contact each other, and a gap is provided between them. From this gap, the insulating base material 2 is cut to a predetermined depth while discharging chips generated when the insulating base material 2 is cut with the cutting blade 14 and the end portion 13b to the upper surface 2a of the insulating base material 2 as needed. To go.

このようにして、図6に示すようなパラボラ収容凹部7が形成されることになる。このとき、パラボラ収容凹部7の内周面7bは、傾斜面13cの傾斜角度θ1に沿って形成されるため、内周面7bの水平面に対する傾斜角度θ2は40°〜50°となり、すなわち傾斜角度θ1と同様の傾斜角度となる。なお、傾斜角度の異なる座ぐり用ビット13を用いれば、パラボラ収容凹部7の内周面7bの傾斜角度を適宜変えることができる。   In this way, the parabolic accommodation recess 7 as shown in FIG. 6 is formed. At this time, since the inner peripheral surface 7b of the parabolic accommodation recess 7 is formed along the inclination angle θ1 of the inclined surface 13c, the inclination angle θ2 of the inner peripheral surface 7b with respect to the horizontal plane is 40 ° to 50 °, that is, the inclination angle The inclination angle is the same as θ1. If the counterbore bit 13 having a different inclination angle is used, the inclination angle of the inner peripheral surface 7b of the parabolic accommodation recess 7 can be appropriately changed.

そして、パラボラ収容凹部7の形成によって切削された一次銅めっき層3は、パラボラ収容凹部7の開口部8を有する一次銅めっき層3Bとなる。また、パラボラ収容凹部7の底面9Aに開口する貫通孔5の内周面に形成されている一次銅めっき層が一次銅めっき層3Aとなる。この貫通孔5の内部に充填されている銅ペースト6の上面6cが、パラボラ収容凹部7の底面9Aを呈することになる。   The primary copper plating layer 3 cut by the formation of the parabolic accommodation recess 7 becomes the primary copper plating layer 3 </ b> B having the opening 8 of the parabolic accommodation recess 7. Further, the primary copper plating layer formed on the inner peripheral surface of the through-hole 5 that opens to the bottom surface 9 </ b> A of the parabolic housing recess 7 becomes the primary copper plating layer 3 </ b> A. The upper surface 6 c of the copper paste 6 filled in the through hole 5 presents the bottom surface 9 </ b> A of the parabolic accommodation recess 7.

次に、上記のように、パラボラ収容凹部7を形成した絶縁基材2に第2の銅めっき処理を施して二次銅めっき層4を形成する。まず、図7に示すように、絶縁基材2の上面2aに形成されている一次銅めっき層3Bの表面と、パラボラ収容凹部7の内周面7b、つまり、図6に示すように、パラボラ収容凹部7の形成によって露出した絶縁基材2と、パラボラ収容凹部7の底面9Aの中央部を呈する銅ペースト6の上面6cとに、これらを被覆する第2の銅めっき処理を施して、二次銅めっき層4Aを形成する。さらに、絶縁基材2の下面2bに形成されている一次銅めっき層3の表面と、銅ペースト6の下面6bとを被覆する二次銅めっき層4Bを形成する。これにより、絶縁基材2は、二次銅めっき層4A,4Bによって完全に被覆される。   Next, as described above, the secondary copper plating layer 4 is formed by performing the second copper plating process on the insulating base material 2 on which the parabolic housing recesses 7 are formed. First, as shown in FIG. 7, the surface of the primary copper plating layer 3B formed on the upper surface 2a of the insulating base 2 and the inner peripheral surface 7b of the parabolic accommodation recess 7, that is, as shown in FIG. The insulating base material 2 exposed by the formation of the housing recess 7 and the upper surface 6c of the copper paste 6 that presents the central portion of the bottom surface 9A of the parabolic housing recess 7 are subjected to a second copper plating process to cover them. Next, a secondary copper plating layer 4A is formed. Further, a secondary copper plating layer 4 </ b> B that covers the surface of the primary copper plating layer 3 formed on the lower surface 2 b of the insulating base 2 and the lower surface 6 b of the copper paste 6 is formed. Thereby, the insulating base material 2 is completely covered with the secondary copper plating layers 4A and 4B.

さらに、図8に示すように、絶縁基材2の上面2a側に、発光素子17を搭載するためのニッケルめっき層11と金めっき層18とを順に積層する。詳しくは、二次銅めっき層4Aの表面にニッケルめっき層11を形成し、その上から金めっき層18を形成する。この金めっき層18には、発光素子17を導通させるときのワイヤが打ち込まれる。金めっき層18は軟質であるので、発光素子17のワイヤを打ち込みやすいが、その強度を向上させるために、上記のように、ニッケル層11を下地として形成する。   Further, as shown in FIG. 8, a nickel plating layer 11 and a gold plating layer 18 for mounting the light emitting element 17 are sequentially laminated on the upper surface 2 a side of the insulating base 2. Specifically, the nickel plating layer 11 is formed on the surface of the secondary copper plating layer 4A, and the gold plating layer 18 is formed thereon. A wire for conducting the light emitting element 17 is driven into the gold plating layer 18. Since the gold plating layer 18 is soft, it is easy to drive the wire of the light emitting element 17, but in order to improve the strength, the nickel layer 11 is formed as a base as described above.

また、図8に示す絶縁基材2の下面2b側において、貫通孔5の開口部の中心部から径方向外側に広がる所定の範囲内の一次銅めっき層3及び二次銅めっき層4Bを残して、その他の部分に形成されている一次銅めっき層3及び二次銅めっき層4Bをエッチングによって除去し、絶縁基材2の下面2bを露出させる。すると、図1に示すように、絶縁基材2の下面2bには、貫通孔5の開口部周縁を被覆する一次銅めっき層3Cと、この一次銅めっき層3C及び銅ペースト6の下面6bとを被覆する二次銅めっき層4Cとが形成される。ここで、上記した所定の範囲は、絶縁基材2には、複数の貫通孔5が形成されているため、少なくとも各貫通孔5毎に形成される一次銅めっき層3C及び二次銅めっき層4C同士が繋がらず、貫通孔5を完全に絶縁できるような範囲である。   Further, on the lower surface 2b side of the insulating base material 2 shown in FIG. 8, the primary copper plating layer 3 and the secondary copper plating layer 4B within a predetermined range extending radially outward from the center of the opening of the through hole 5 are left. Then, the primary copper plating layer 3 and the secondary copper plating layer 4B formed in other portions are removed by etching, and the lower surface 2b of the insulating base 2 is exposed. Then, as shown in FIG. 1, on the lower surface 2 b of the insulating base 2, the primary copper plating layer 3 </ b> C covering the periphery of the opening of the through hole 5, the lower surface 6 b of the primary copper plating layer 3 </ b> C and the copper paste 6, And a secondary copper plating layer 4 </ b> C covering the surface. Here, since the plurality of through-holes 5 are formed in the insulating base material 2, the predetermined range described above includes the primary copper plating layer 3 </ b> C and the secondary copper plating layer formed at least for each through-hole 5. This is a range in which the 4Cs are not connected to each other and the through hole 5 can be completely insulated.

このようにして、一次銅めっき層3A、3B、3C及び二次銅めっき層4A、4Bが形成される。   In this way, primary copper plating layers 3A, 3B, 3C and secondary copper plating layers 4A, 4B are formed.

そして、貫通孔5の周縁部分にある銅めっき層3,4を被覆するようにして、感光性樹脂であるレジストを絶縁基材2の下面2b上に塗布して感光性レジスト層12を形成する。   And the resist which is photosensitive resin is apply | coated on the lower surface 2b of the insulating base material 2 so that the copper plating layers 3 and 4 in the peripheral part of the through-hole 5 may be coat | covered, and the photosensitive resist layer 12 is formed. .

このように、パラボラ収容凹部7は、その底部9の底面9Aの中央部が貫通孔5内に位置するように形成されていることから、座ぐり加工の中心が銅ペースト6となるので加工しやすく、中央部に突起部のない平坦な底部9とすることができる。したがって、パラボラ収容凹部7の底部9に発光素子17を水平な状態で設けることができる。尚、底部9は、必ずしも平坦でなくてもよく、底面9Aに発光素子17を水平に載置できればよい。例えば、発光素子17の載置に影響がなければ、底面9Aの中央部が若干凹んでいてもよい。   As described above, the parabola-receiving recess 7 is formed so that the center of the bottom surface 9A of the bottom 9 is located in the through hole 5, so that the center of the spot facing is the copper paste 6. It is easy and can be made into the flat bottom part 9 without a projection part in the center part. Therefore, the light emitting element 17 can be provided in a horizontal state on the bottom 9 of the parabolic accommodation recess 7. Note that the bottom portion 9 does not necessarily have to be flat as long as the light emitting element 17 can be placed horizontally on the bottom surface 9A. For example, if the placement of the light emitting element 17 is not affected, the central portion of the bottom surface 9A may be slightly recessed.

また、パラボラ収容凹部7の内周面7bは、傾斜を成しているとともに金めっき層18が露出しているので、発光素子17が発する赤外線の左右に広がる散乱光を反射させながら効率よく集光させることができる。よって、赤外線の所望の反射率を得ることができるとともに、均一且つ良好に絶縁基材2の上方へと赤外線を放射させることができる。   Further, since the inner peripheral surface 7b of the parabolic housing recess 7 is inclined and the gold plating layer 18 is exposed, it efficiently collects while reflecting the scattered light that spreads to the left and right of the infrared rays emitted from the light emitting element 17. Can be lighted. Therefore, it is possible to obtain a desired reflectance of infrared rays and to radiate infrared rays uniformly and satisfactorily above the insulating substrate 2.

また、絶縁基材2に、熱伝導性が極めて良好な銅めっき層3A,3B,3C,4A,4Bを形成することによって、発光素子17から生じた熱を大気中に放熱することが可能となる。さらに、これら銅めっき層3A,3B,3C,4A,4Bは、パラボラ収容凹部7及び貫通孔5を介して絶縁基材2の上面2a及び下面2bへと繋がっているため、放熱効果をより向上させることができる。したがって、発光素子17の劣化を防ぎ、長寿命化を図ることができる。加えて、発光素子17の発熱によって膨張してしまう絶縁基材2の影響を受け難くすることができる。   Further, by forming the copper plating layers 3A, 3B, 3C, 4A, and 4B having extremely good thermal conductivity on the insulating base material 2, it is possible to dissipate heat generated from the light emitting element 17 into the atmosphere. Become. Furthermore, since these copper plating layers 3A, 3B, 3C, 4A, 4B are connected to the upper surface 2a and the lower surface 2b of the insulating base material 2 through the parabolic housing recesses 7 and the through holes 5, the heat dissipation effect is further improved. Can be made. Therefore, deterioration of the light emitting element 17 can be prevented and the life can be extended. In addition, it is possible to make it less susceptible to the influence of the insulating base material 2 that expands due to heat generation of the light emitting element 17.

さらに、銅めっき層3A,3B,3C,4A,4Bは、無電解銅めっき法によって形成されるので、表面の粗い絶縁基材2であっても、その厚みを均一に形成することができる。電解銅めっき法を用いた場合と比べると、多少時間は掛かるが、厚みにムラのない銅めっき層3A,3B,3C,4A,4Bを形成することができる。   Furthermore, since the copper plating layers 3A, 3B, 3C, 4A, and 4B are formed by the electroless copper plating method, even the insulating base material 2 having a rough surface can be formed with a uniform thickness. The copper plating layers 3A, 3B, 3C, 4A, and 4B having no uneven thickness can be formed although it takes a little time compared to the case of using the electrolytic copper plating method.

また、絶縁基材2を貫通させて貫通孔5を設けることにより、貫通孔5内の空気を逃がしながら銅ペースト6を貫通孔5内に充填することができるので、貫通孔5内に隙間なく銅ペースト6を充填させることができる。この銅ペースト6は、銅粒子を含んでいるので、熱伝導性だけでなく、電気伝導性も良い。   Further, by providing the through hole 5 through the insulating base material 2, the copper paste 6 can be filled into the through hole 5 while releasing the air in the through hole 5, so that there is no gap in the through hole 5. The copper paste 6 can be filled. Since this copper paste 6 contains copper particles, it has good electrical conductivity as well as thermal conductivity.

また、上記のように絶縁基材2の下面2b側に塗布された感光性レジスト層12によって、各貫通孔5を絶縁させることができる。さらに、この感光性レジスト層12が銅めっき層3A,3B,3C,4A,4Bの防護層となり、これら銅めっき層3A,3B,3C,4A,4Bの酸化を防ぐことができる。   Moreover, each through-hole 5 can be insulated with the photosensitive resist layer 12 apply | coated to the lower surface 2b side of the insulating base material 2 as mentioned above. Further, the photosensitive resist layer 12 serves as a protective layer for the copper plating layers 3A, 3B, 3C, 4A, and 4B, and oxidation of the copper plating layers 3A, 3B, 3C, 4A, and 4B can be prevented.

尚、上記のような銅めっき層3A,3B,3C,4A,4Bは、発光素子17への一定の導通性を確保するための厚みを適宜確保する必要がある。
また、絶縁基材2の下面2bにエッチングを施したが、各貫通孔5を絶縁できればよく、その処理方法は問わない。
さらに、貫通孔5は、絶縁基材2を貫通するのではなく、底部を有して形成しても良い。
加えて、上記では、充填剤として銅ペースト6を用いたが、これに限らず、樹脂ペースト或いは金属粉入りのペーストを用いても良い。
Note that the copper plating layers 3A, 3B, 3C, 4A, and 4B as described above need to have appropriate thicknesses for ensuring a certain level of conductivity to the light emitting element 17.
Moreover, although the lower surface 2b of the insulating base material 2 was etched, each through-hole 5 should just be insulated and the processing method is not ask | required.
Further, the through hole 5 may be formed not having to penetrate the insulating base material 2 but having a bottom portion.
In addition, in the above description, the copper paste 6 is used as the filler. However, the present invention is not limited thereto, and a resin paste or a paste containing metal powder may be used.

また、上記において貫通孔5は、パラボラ収容凹部7の底面9Aよりも小径を成しているが、例えば、図9に示すように、パラボラ収容凹部7全体が貫通孔25内に収まるように形成してもよい。つまり、絶縁基材2に、パラボラ収容凹部7よりも大きい径で貫通孔25を形成し、この貫通孔25の内周面を含む絶縁基材2の表面に一次銅めっき層3を施す。そして、貫通孔25を穴埋めするようにして、その内部に銅ペースト6或いは樹脂ペースト25を充填した後、貫通孔25の中心部にパラボラ収容凹部7を形成する。このように、充填剤に銅ペースト6或いは樹脂ペースト25を用いた場合には、パラボラ収容凹部7を含む絶縁基材2の表面に、上記と同様、二次銅めっき層、ニッケルめっき層及び金めっき層を形成する。   In addition, in the above, the through hole 5 has a smaller diameter than the bottom surface 9A of the parabola receiving recess 7. For example, as shown in FIG. 9, the entire parabola receiving recess 7 is formed so as to be accommodated in the through hole 25. May be. That is, the through hole 25 is formed in the insulating base 2 with a diameter larger than that of the parabolic accommodation recess 7, and the primary copper plating layer 3 is applied to the surface of the insulating base 2 including the inner peripheral surface of the through hole 25. Then, after filling the through hole 25 and filling the inside with the copper paste 6 or the resin paste 25, the parabolic accommodation recess 7 is formed at the center of the through hole 25. As described above, when the copper paste 6 or the resin paste 25 is used as the filler, the secondary copper plating layer, the nickel plating layer, and the gold are formed on the surface of the insulating base material 2 including the parabolic accommodation recess 7 as described above. A plating layer is formed.

尚、貫通孔25の穴埋めには、発光性の高い樹脂ペーストを用いることが好ましく、例えば、銀ペーストを充填しても良い。これにより、上記のような二次銅めっき層、ニッケルめっき層及び金めっき層を施す必要はなくなり、作業が容易となる。   For filling the through holes 25, it is preferable to use a resin paste having a high light emitting property. For example, a silver paste may be filled. Thereby, it is not necessary to apply the secondary copper plating layer, the nickel plating layer, and the gold plating layer as described above, and the operation becomes easy.

本発明における一実施形態の赤外線通信モジュール基板を示す側断面図である。It is a sectional side view which shows the infrared communication module board | substrate of one Embodiment in this invention. 本発明における一実施形態の赤外線通信モジュール基板の製造工程を示す側断面図である。It is a sectional side view which shows the manufacturing process of the infrared communication module board | substrate of one Embodiment in this invention. 本発明における一実施形態の赤外線通信モジュール基板の製造工程を示す側断面図である。It is a sectional side view which shows the manufacturing process of the infrared communication module board | substrate of one Embodiment in this invention. 本発明における一実施形態の赤外線通信モジュール基板の製造工程を示す側断面図である。It is a sectional side view which shows the manufacturing process of the infrared communication module board | substrate of one Embodiment in this invention. 本発明における一実施形態の赤外線通信モジュール基板の製造工程を示す側断面図である。It is a sectional side view which shows the manufacturing process of the infrared communication module board | substrate of one Embodiment in this invention. 本発明における一実施形態の赤外線通信モジュール基板の製造工程を示す側断面図である。It is a sectional side view which shows the manufacturing process of the infrared communication module board | substrate of one Embodiment in this invention. 本発明における一実施形態の赤外線通信モジュール基板の製造工程を示す側断面図である。It is a sectional side view which shows the manufacturing process of the infrared communication module board | substrate of one Embodiment in this invention. 本発明における一実施形態の赤外線通信モジュール基板の製造工程を示す側断面図である。It is a sectional side view which shows the manufacturing process of the infrared communication module board | substrate of one Embodiment in this invention. 本発明における他の実施形態の赤外線通信モジュール基板を示す側断面図である。It is a sectional side view which shows the infrared communication module board | substrate of other embodiment in this invention. 従来の赤外線通信モジュール基板の形態を示す側断面図である。It is a sectional side view which shows the form of the conventional infrared communication module board | substrate.

符号の説明Explanation of symbols

1 赤外線通信モジュール基板(基板)
2 絶縁基材
5 貫通孔(穴部)
6 銅ペースト(充填剤)
7 パラボラ収容凹部(収容凹部)
9 底部
17 発光素子
1 Infrared communication module board (board)
2 Insulating base material 5 Through hole (hole)
6 Copper paste (filler)
7 Parabolic receiving recess (receiving recess)
9 Bottom 17 Light emitting element

Claims (3)

発光素子を収容するためのテーパ状の収容凹部を有する基板であって、
前記収容凹部の底部の少なくとも中央部が、穴部に充填された充填剤で形成されていることを特徴とする基板。
A substrate having a tapered housing recess for housing a light emitting element,
At least the center part of the bottom part of the said accommodating recessed part is formed with the filler with which the hole part was filled, The board | substrate characterized by the above-mentioned.
前記穴部は、貫通孔であることを特徴とする請求項1記載の基板。     The substrate according to claim 1, wherein the hole is a through hole. 発光素子を収容するためのテーパ状の収容凹部を有する基板の製造方法において、
絶縁基材に穴部を形成する穴部形成工程と、
前記穴部に充填剤を充填させて穴埋めする穴埋め工程と、
前記穴部内に底部の中央部が位置するように前記収容凹部を座ぐり加工によって形成する収容凹部形成工程とを有することを特徴とする基板の製造方法。
In a method for manufacturing a substrate having a tapered housing recess for housing a light emitting element,
A hole forming step for forming a hole in the insulating substrate;
Filling a hole by filling the hole with a filler;
And a housing recess forming step of forming the housing recess by counterbore so that the central portion of the bottom portion is positioned in the hole.
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JP2009076752A (en) * 2007-09-21 2009-04-09 Shinko Electric Ind Co Ltd Substrate manufacturing method
TWI406384B (en) * 2008-07-25 2013-08-21 Unimicron Technology Corp Package substrate and fabrication method thereof
JP2016025182A (en) * 2014-07-18 2016-02-08 大日本印刷株式会社 Through electrode substrate, wiring board and semiconductor device

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JPH0883930A (en) * 1994-09-14 1996-03-26 Mitsubishi Gas Chem Co Inc Manufacture of board for mounting chip led
JP2002094122A (en) * 2000-07-13 2002-03-29 Matsushita Electric Works Ltd Light source and its manufacturing method
JP2004282065A (en) * 2003-03-14 2004-10-07 Chin Sokin Package structure of light emitting diode for increasing thermal conduction and luminance
JP2005012155A (en) * 2003-05-26 2005-01-13 Matsushita Electric Works Ltd Light emitting device
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JPH0883930A (en) * 1994-09-14 1996-03-26 Mitsubishi Gas Chem Co Inc Manufacture of board for mounting chip led
JP2002094122A (en) * 2000-07-13 2002-03-29 Matsushita Electric Works Ltd Light source and its manufacturing method
JP2004282065A (en) * 2003-03-14 2004-10-07 Chin Sokin Package structure of light emitting diode for increasing thermal conduction and luminance
JP2005012155A (en) * 2003-05-26 2005-01-13 Matsushita Electric Works Ltd Light emitting device
JP2005039100A (en) * 2003-07-16 2005-02-10 Matsushita Electric Works Ltd Circuit component for highly thermally conductive light emitting device, and high heat dissipation module
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Publication number Priority date Publication date Assignee Title
JP2009076752A (en) * 2007-09-21 2009-04-09 Shinko Electric Ind Co Ltd Substrate manufacturing method
TWI406384B (en) * 2008-07-25 2013-08-21 Unimicron Technology Corp Package substrate and fabrication method thereof
JP2016025182A (en) * 2014-07-18 2016-02-08 大日本印刷株式会社 Through electrode substrate, wiring board and semiconductor device

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