JP2006228866A - Piezoelectric actuator manufacturing method, piezoelectric actuator, liquid ejecting head, and liquid ejecting apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a piezoelectric actuator manufacturing method and a piezoelectric actuator having excellent piezoelectric characteristics and improved adhesion between a piezoelectric layer and an upper electrode.
A step of forming an insulating film (elastic film) on a substrate; a step of forming a lower electrode on the insulating film; a step of forming a piezoelectric film on the lower electrode; A step of forming the first conductive film 15 on the piezoelectric film 14 and ions are implanted into at least the interface between the piezoelectric film 14 and the first conductive film 15 through the first conductive film 15 to form the conductive layer 16. Forming an upper electrode forming film 17 having the first conductive film 15 and the conductive layer 16, and patterning the piezoelectric film 14 and the upper electrode forming film 17 to form the piezoelectric layer 18 and the upper electrode. A step of forming a piezoelectric actuator.
[Selection] Figure 5

Description

  The present invention relates to a method for manufacturing a piezoelectric actuator using a piezoelectric effect of a piezoelectric film, a piezoelectric actuator, a liquid ejecting head, and a liquid ejecting apparatus.

  Conventionally, as an example of a liquid ejecting head, for example, there is an ink jet recording head. In this ink jet recording head, a piezoelectric actuator using the piezoelectric effect of a piezoelectric film is used as a drive source for ink ejection of a printer. This piezoelectric actuator generally includes a diaphragm that forms part of a pressure generating chamber that communicates with a nozzle opening (ejection port) that ejects droplets (ink droplets), a lower electrode formed on the diaphragm, And a piezoelectric element having a piezoelectric layer and an upper electrode. In such an ink jet recording head, various improvements have been made for the purpose of obtaining stable droplet discharge characteristics and improving reliability.

  As such an ink jet recording head, for example, it is joined to the piezoelectric film side of a flow path forming substrate having at least two rows of pressure generating chambers that communicate with nozzle openings and are defined by a plurality of partition walls, A bonding substrate on which a drive circuit for driving the piezoelectric layer is mounted is provided, and a through-hole that penetrates the bonding substrate in the thickness direction is provided in a portion corresponding to the row of the pressure generation chambers of the bonding substrate. A lead-out line led out from each of the piezoelectric layers extends to a portion corresponding to the through hole, and the lead-out line and the drive circuit are connected by a conductive wire that extends through the through hole. By electrically connecting, there is one in which the area of the through-hole is suppressed to a small size. (See Patent Document 1).

When manufacturing the above-described conventional ink jet recording head, the following method is usually employed. That is, a silicon single crystal substrate wafer as a flow path forming substrate is thermally oxidized in a diffusion furnace at about 1100 ° C. to form an elastic film made of silicon dioxide. Next, after forming a lower electrode forming film on the entire surface of the elastic film by sputtering, the lower electrode forming film is patterned to form a lower electrode. Next, after forming a piezoelectric film on the elastic film on which the lower electrode is formed by a sol-gel method, the piezoelectric film is fired at a temperature of about 600 to 1000 ° C. in an air atmosphere or an oxygen atmosphere. Crystallize. Next, Pt, Ir, etc. are formed by sputtering to form an upper electrode forming film, and the upper electrode forming film and the piezoelectric film are patterned to form the upper electrode and the piezoelectric layer. An ink jet recording head is manufactured by performing a desired process.
JP 2003-246065 A

  However, in the above-described conventional ink jet recording head, the adhesion between the piezoelectric layer and the upper electrode is not sufficient, and there is a possibility that the upper electrode is likely to be peeled off, which may reduce yield and reliability. was there. Therefore, when a base metal (adhesion film) such as Ti having good adhesion to the piezoelectric layer is used as the upper electrode, the base metal is oxidized, making it difficult to obtain sufficient piezoelectric characteristics.

  In this structure, a low dielectric layer is easily generated between the piezoelectric layer and the upper electrode, and there is a possibility that sufficient piezoelectric characteristics cannot be obtained. Therefore, in order to prevent the generation of a low dielectric layer between the piezoelectric layer and the upper electrode, it may be possible to perform a reverse sputtering step before forming the upper electrode forming film by the sputtering method. If this reverse sputtering process is performed, the composition of the surface of the piezoelectric layer may change, and the piezoelectric characteristics may deteriorate.

  The present invention has been made in view of such circumstances, and an object thereof is to provide a method of manufacturing a piezoelectric actuator having excellent piezoelectric characteristics and improved adhesion between the piezoelectric layer and the upper electrode. To do.

  Another object of the present invention is to provide a piezoelectric actuator having excellent piezoelectric characteristics and improved adhesion between the piezoelectric layer and the upper electrode.

  To achieve this object, the present invention provides a diaphragm including an insulating film and a lower electrode formed on the insulating film, a piezoelectric layer formed on the diaphragm, and a piezoelectric layer formed on the piezoelectric layer. A method of manufacturing a piezoelectric actuator comprising: a step of forming an insulating film on a substrate; a step of forming a lower electrode on the insulating film; and a piezoelectric film on the lower electrode. A step of forming, a step of forming a first conductive film on the piezoelectric film, and an ion implantation through at least the interface between the piezoelectric film and the first conductive film through the first conductive film. Forming a layer and forming an upper electrode forming film including the first conductive film and the conductive layer; and patterning the piezoelectric film and the upper electrode forming film to form a piezoelectric layer and an upper electrode And a method of manufacturing a piezoelectric actuator comprising: It is intended.

  According to the method for manufacturing a piezoelectric actuator including these steps, the conductive film is made conductive by implanting ions into at least the interface between the piezoelectric film and the first conductive film through the first conductive film formed on the piezoelectric film. Since the layer is formed and the upper electrode forming film including the first conductive film and the conductive layer is formed, the upper electrode forming film is not peeled off from the piezoelectric film. Therefore, the adhesion between the piezoelectric layer formed later and the upper electrode can be improved. Furthermore, a dielectric layer that is one of the causes of lowering the piezoelectric characteristics of the piezoelectric layer is not formed at the interface between the piezoelectric layer and the upper electrode. Therefore, excellent piezoelectric characteristics can be provided.

  In the method for manufacturing a piezoelectric actuator according to the present invention, the step of forming the first conductive film includes a step of forming an adhesion film on the piezoelectric film, and a second conductive film on the adhesion film. Forming the step. By doing so, the adhesion between the upper electrode forming film and the piezoelectric film can be further improved. In this case, the interface between the piezoelectric film and the first conductive film is an interface between the piezoelectric film and the adhesion film.

  In the method for manufacturing a piezoelectric actuator according to the present invention, the ions can be further implanted into the first conductive film side of the piezoelectric film. According to this step, the layer on the first conductive film side of the piezoelectric film including the interface also becomes a conductive layer.

  Moreover, this invention provides the piezoelectric actuator manufactured by the manufacturing method of the piezoelectric actuator concerning this invention. This piezoelectric actuator can have both excellent adhesion between the piezoelectric layer and the upper electrode and excellent piezoelectric characteristics.

  The present invention also includes a piezoelectric actuator according to the present invention, a pressure generation chamber whose internal volume changes due to mechanical displacement of the piezoelectric actuator, and a discharge port that communicates with the pressure generation chamber and discharges droplets. A liquid jet head including the above is provided.

  Furthermore, the present invention provides a liquid ejecting apparatus including the liquid ejecting head according to the present invention and a driving device that drives the liquid ejecting head.

  According to the method for manufacturing a piezoelectric actuator according to the present invention, the conductive layer is formed by implanting ions into at least the interface between the piezoelectric film and the first conductive film through the first conductive film formed on the piezoelectric film. Since the upper electrode forming film is formed and includes the first conductive film and the conductive layer, the upper electrode formed later is not peeled off from the piezoelectric film. As a result, the adhesion between the piezoelectric layer and the upper electrode can be improved. In addition, a dielectric layer that is one of the causes of reducing the piezoelectric characteristics of the piezoelectric layer is not formed at the interface between the piezoelectric layer and the upper electrode. As a result, the yield can be improved and a piezoelectric actuator having excellent reliability can be manufactured.

  Next, a piezoelectric actuator and a manufacturing method thereof according to preferred embodiments of the present invention will be described with reference to the drawings. In addition, embodiment described below is the illustration for demonstrating this invention, and this invention is not limited only to these embodiment. Therefore, the present invention can be implemented in various forms without departing from the gist thereof.

  FIG. 1 is an exploded perspective view of a liquid ejecting head including a piezoelectric actuator according to a preferred embodiment of the present invention, and FIG. 2 is a plan view showing a part near the piezoelectric actuator of the liquid ejecting head shown in FIG. 3 to 8 are cross-sectional views showing a part of the manufacturing process of the liquid jet head shown in FIG. 1, and FIG. 9 is a perspective view schematically showing an ink jet recording apparatus equipped with the liquid jet head shown in FIG. It is.

As shown in FIGS. 1 to 8, the liquid ejecting head according to the present embodiment has a piezoelectric actuator 100 in a region corresponding to the pressure generation chamber 30 of the flow path forming substrate 10 in which a plurality of pressure generation chambers 30 are formed. Is arranged. In the present embodiment, a silicon single crystal substrate having a plane orientation (110) is used as the flow path forming substrate 10. An elastic film (insulating film) 25 having a thickness of 1 to 2 μm made of the SiO ₂ film 11 and the ZrO ₂ film 12 is formed on one surface of the flow path forming substrate 10. Further, the other surface of the flow path forming substrate 10 is an opening surface.

A plurality of pressure generating chambers 30 formed by anisotropic etching of a silicon single crystal substrate are formed on the opening surface of the flow path forming substrate 10. An ink supply path 53 communicates with a communication portion 52 that constitutes a part of a reservoir that communicates with the reservoir portion 51 and serves as a common ink chamber for each pressure generating chamber 30. An SiO ₂ film 33 (see FIG. 8) having a function as a protective film having resistance to the ink stored in the pressure generating chamber 30 is formed on the opening surface of the flow path forming substrate 10. Yes.

  Further, on the opening surface side of the flow path forming substrate 10, a nozzle plate 36 in which a nozzle opening 35 communicating with the side opposite to the ink supply path 53 of each pressure generating chamber 30 is formed is a bonding agent, a heat welding film, or the like. It is fixed through. The nozzle plate 36 entirely covers one surface of the flow path forming substrate 10 on one surface, and also serves as a reinforcing plate that protects the silicon single crystal substrate from impact and external force. Further, the nozzle plate 36 may be formed of a material having substantially the same thermal expansion coefficient as that of the flow path forming substrate 10. In this case, since the deformation by heat of the flow path forming substrate 10 and the nozzle plate 36 is substantially the same, it is possible to easily bond using a thermosetting bonding agent or the like.

  Here, the size of the pressure generation chamber 30 that applies ink droplet discharge pressure to the ink and the size of the nozzle opening 35 that discharges the ink droplet are optimized according to the amount of ink droplet to be discharged, the discharge speed, and the discharge frequency. The For example, when recording 360 ink droplets per inch, the nozzle opening 35 needs to be accurately formed with a diameter of several tens of μm.

  On the other hand, on the elastic film 25 formed on the surface opposite to the opening surface of the flow path forming substrate 10 and on the region where the pressure generating chamber 30 is formed, as shown in FIG. A lower electrode 13, a piezoelectric layer 18, and an upper electrode 19 are formed. The lower electrode 13 forms a diaphragm together with the elastic film 25. The upper electrode 19 includes a first conductive film 15 and a conductive layer 16. (See FIGS. 6 to 8). The piezoelectric actuator 100 is constituted by a portion including the elastic film 25 and the lower electrode 13, the piezoelectric layer 18, and the upper electrode 19. (See FIGS. 1 and 2).

  A protective film 20 is formed on the upper electrode 19 so as not to deteriorate the piezoelectric layer 18 due to moisture from the outside. The upper electrode 19 is connected via a contact hole 21 formed in the protective film 20. The wiring 22 is electrically connected. (See FIGS. 7 and 8).

  In this embodiment, the lower electrode 13 is a common electrode of the piezoelectric actuator 100 and the upper electrode 19 is an individual electrode of the piezoelectric actuator 100. However, there is no problem even if this is reversed for the convenience of the drive circuit and wiring. . In any case, the piezoelectric actuator 100 is formed for each pressure generating chamber 30.

  Further, the bonding plate 24 is disposed on the surface (upper surface in FIG. 1) opposite to the surface on which the nozzle plate 36 of the flow path forming substrate 10 is disposed. The joining plate 24 is formed with a reservoir portion 51 that constitutes a part of the reservoir. In the present embodiment, the reservoir portion 51 is formed across the joining plate 24 in the thickness direction and across the width direction of the pressure generating chamber 30, and communicates with the communication portion 52 of the flow path forming substrate 10. Thus, a reservoir serving as a common ink chamber for each pressure generating chamber 30 is configured.

  In addition, piezoelectric actuator holding portions 54 that secure a space that does not hinder the movement of the piezoelectric actuator 100 are provided corresponding to the pressure generation chambers 30 in regions of the bonding plate 24 facing the piezoelectric actuator 100. . This space may be sealed or not sealed.

  In the present embodiment, the piezoelectric actuator holding portion 54 is provided for each row of the piezoelectric actuators 100, but the piezoelectric actuator holding portion 54 may be provided independently for each piezoelectric actuator 100. Such a bonding plate 24 is preferably made of a material substantially the same as the coefficient of thermal expansion of the flow path forming substrate 10, for example, glass, a ceramic material, etc. The silicon single crystal substrate was used.

  Furthermore, a through hole 55 that penetrates the bonding plate 24 in the thickness direction is provided in a substantially central portion of the bonding plate 24, that is, in a region facing between the rows of pressure generation chambers 30. Further, for example, a circuit board or a semiconductor integrated circuit (IC) for driving each piezoelectric actuator 100 on both sides of the through hole 55 of the bonding plate 24, that is, a portion corresponding to each row of the pressure generating chambers 30. Each of the drive circuits 110 is mounted. For example, in the present embodiment, each drive circuit 110 mounted on both sides of the through hole 55 is for driving the piezoelectric actuator 100 provided in a region facing each drive circuit 110.

  The liquid ejecting head according to the present embodiment takes in ink from an ink introduction port connected to an external ink supply unit (not shown), fills the interior from the reservoir to the nozzle opening 35, and then supplies the ink from the drive circuit 110. In accordance with the recording signal, a voltage is applied between the lower electrode 13 and the upper electrode 19 corresponding to the pressure generating chamber 30, and the lower electrode 13 and the elastic film 25 are caused by mechanical displacement caused by the piezoelectric effect of the piezoelectric layer 18. The inner volume of the pressure generation chamber 30 is changed by bending and deforming the vibration plate, and the pressure in each pressure generation chamber 30 is increased to eject ink droplets from the nozzle openings 35.

  This liquid ejecting head constitutes a part of a recording head unit having an ink flow path communicating with an ink cartridge or the like, and is mounted on an ink jet recording apparatus.

  Specifically, as shown in FIG. 9, recording head units 1A and 1B having a liquid ejecting head are provided with cartridges 2A and 2B constituting an ink supply means in a detachable manner. The mounted carriage 3 is provided on a carriage shaft 5 attached to the apparatus main body 4 so as to be movable in the axial direction. These recording head units 1A and 1B, for example, discharge a black ink composition and a color ink composition, respectively. The driving force of the driving motor 6 is transmitted to the carriage 3 via a plurality of gears and timing belt 7 (not shown), so that the carriage 3 on which the recording head units 1A and 1B are mounted is moved along the carriage shaft 5. The On the other hand, the apparatus body 4 is provided with a platen 8 along the carriage shaft 5, and a recording sheet S, which is a recording medium such as paper fed by a not-shown paper feed roller, is conveyed on the platen 8. It is like that.

  Next, a manufacturing process of the liquid jet head including the piezoelectric actuator according to the present embodiment will be described with reference to the drawings.

First, as in the step shown in FIG. 3, the SiO ₂ film 11 is formed on the silicon single crystal substrate to be the flow path forming substrate 10 by, for example, thermal oxidation. Next, a ZrO ₂ film 12 is formed on the SiO ₂ film 11. In the present embodiment, the SiO ₂ film 11 and the ZrO ₂ film 12 become the elastic film (insulating film) 25. Next, a lower electrode forming film is formed on the elastic film 25 by a sputtering method, and is patterned into a desired shape to form the lower electrode 13. In addition, as a material which comprises the lower electrode 13, desired electroconductive materials, such as Ti, Ir, Pt, can be used, for example.

  Next, in the step shown in FIG. 4, a piezoelectric precursor film is formed with a predetermined thickness on the flow path forming substrate 10 on which the lower electrode 13 is formed by a sol-gel method. Next, the flow path forming substrate 10 on which the piezoelectric precursor film is formed is fired and crystallized at a temperature of about 600 ° C. or higher in an air atmosphere or an oxygen atmosphere. By being able to be fired at such a high temperature, the piezoelectric film 14 is sufficiently crystallized.

  Here, the piezoelectric film 14 is preferably crystal-oriented. For this reason, in the present embodiment, for example, a so-called sol in which a metal organic substance is dissolved and dispersed in a catalyst is applied and dried to form a gel, and a piezoelectric precursor film having no crystallinity is formed. Is fired at a high temperature to obtain a piezoelectric film 14 made of a metal oxide and having crystallinity. For example, a lead zirconate titanate-based material can be suitably used as the material of the piezoelectric film 14. The method for forming the piezoelectric film 14 is not particularly limited. For example, the piezoelectric film 14 may be formed by a sputtering method. Further, after forming a piezoelectric precursor film of lead zirconate titanate by a sol-gel method or a sputtering method, a method of crystal growth at a low temperature by a high pressure treatment method in an alkaline aqueous solution may be used.

  In the piezoelectric film 14 thus formed, crystals are preferentially oriented unlike a bulk piezoelectric body, and in the present embodiment, the piezoelectric film 14 is formed in a columnar shape. Note that the preferential orientation refers to a state in which the orientation direction of the crystal is not disordered and a specific crystal plane is oriented in a substantially constant direction. A columnar thin film refers to a state in which substantially cylindrical crystals are aggregated over the surface direction with the central axis substantially coincided with the thickness direction to form a thin film. Of course, it may be a thin film formed of preferentially oriented granular crystals. In the present embodiment, the thickness of the piezoelectric film 14 is set to 0.2 to 5 μm.

  Next, the first conductive film 15 is formed to a thickness of about 10 to 200 nm on the piezoelectric film 14 by sputtering. In addition, as a material which comprises the 1st electrically conductive film 15, desired electroconductive materials, such as Ir, IrO, Pt, W, Ta, Mo, can be used, for example. In this step, reverse sputtering can also be performed as a pretreatment.

Next, in the step shown in FIG. 5, ions are implanted at least into the interface between the first conductive film 15 and the piezoelectric film 14 through the first conductive film 15 obtained in the step shown in FIG. In the present embodiment, ions are also implanted into the upper layer portion of the piezoelectric film 14, that is, the first conductive film 15 side of the piezoelectric film 14. Further, ions were also implanted into the first conductive film 15. In the present embodiment, the ion implantation (ion implantation) is performed with Al ions, implantation voltage of 300 Kev, and implantation amount (dose amount) of about 1 × 10 ¹⁹ to 1 × 10 ²¹ ions / cm ² . Examples of the ion species to be implanted include Ti, Ir, Pt, Pd, Mo, and W. A region where the ions are implanted becomes the conductive layer 16. Next, the flow path forming substrate 10 into which ions are implanted is subjected to a heat treatment for about 20 minutes at a temperature of about 300 to 400 ° C., for example, to stabilize the conductive layer 16. Thus, the upper electrode forming film 17 composed of the first conductive film 15 and the conductive layer 16 is formed.

  As described above, the conductive layer 16 is formed by implanting (implanting) ions into at least the interface between the first conductive film 15 and the piezoelectric film 14, and the upper electrode forming film 17 is formed together with the first conductive film 15. Therefore, the upper electrode forming film 17 is not peeled off from the piezoelectric film 14, and as a result, the adhesion between the piezoelectric layer 18 and the upper electrode 19 to be formed later can be improved.

  Next, in the process shown in FIG. 6, the piezoelectric film 14 and the upper electrode forming film 17 are patterned by photolithography to form the piezoelectric layer 18 and the upper electrode 19. In this way, the diaphragm composed of the elastic film 25 and the lower electrode 13, the piezoelectric layer 18, and the piezoelectric actuator 100 composed of the upper electrode 19 are formed.

Next, in a step shown in FIG. 7, a protective film 20 made of an Al ₂ O ₃ film is formed on the flow path forming substrate 10 on which the piezoelectric actuator 100 is formed. Next, a contact hole 21 is opened at the junction with the upper electrode 19 of the protective film 20, a wiring forming film is formed on the protective film 20, and then the wiring forming film is patterned to form a contact hole 21. A wiring 22 that is electrically connected to the upper electrode 19 is formed. In addition, as a material which comprises the wiring 22, Al / TiW, Au / NiCr, etc. can be used conveniently, for example.

Next, in the step shown in FIG. 8, the bonding plate 24 is bonded onto the flow path forming substrate 10 obtained in the step shown in FIG. Next, the pressure generation chamber 30 is formed by selectively etching away the surface of the flow path forming substrate 10 opposite to the surface on which the bonding plate 24 is bonded. Next, on the surface of the flow path forming substrate 10 on which the pressure generating chamber 30 is formed, an SiO ₂ film 33 having resistance to ink stored in the pressure generating chamber 30 or the like is formed by a plasma CVD method to about 0. It is formed with a film thickness of 1 μm. Thereafter, a desired process is performed such as joining a nozzle plate 36 having nozzle openings 35 to the surface opposite to the surface on which the joining plate 24 of the flow path forming substrate 10 is joined. The liquid jet head shown in FIG.

  In the present embodiment, the case where the first conductive film 15 is formed on the piezoelectric film 14 in the step shown in FIG. 4 has been described. However, the present invention is not limited to this. For example, as shown in FIG. On the piezoelectric film 14, a conductive adhesion film 26 having a thickness of, for example, about 0.1 to 10 nm is formed, and a second conductive film 27 is formed on the adhesion film 26, for example, 10 to 10 nm. You may form with a film thickness of about 200 nm. In this case, the material constituting the adhesion film 26 is not particularly limited as long as it can improve the adhesion between the piezoelectric film 14 and the second conductive film 27 and can be used as a wiring. Ti, Cr, TiW, TiN, NiCr or the like can be preferably used. Further, as the second conductive film 27, the same material as that of the first conductive film 15 can be preferably used.

  When the process shown in FIG. 10 is performed, next, for example, as shown in FIG. 11, ions are applied to at least the interface between the adhesion film 26 and the piezoelectric film 14 through the adhesion film 26 and the second conductive film 27. A driving process can be performed. Also in this case, for example, ions can be implanted into the upper layer portion of the piezoelectric film 14, that is, the adhesion film 26 side of the piezoelectric film 14. Also, ions can be implanted into the adhesion film 26 and the second conductive film 27. And the area | region where this ion was implanted becomes the conductive layer 16 similarly to embodiment mentioned above. Next, the conductive layer 16 is stabilized in the same manner as described above, and the upper electrode forming film 17 including the second conductive film 27, the adhesion film 26 and the conductive layer 16 is formed.

In the present embodiment, the case where the elastic film (insulating film) 25 having the two-layer structure of the SiO ₂ film 11 and the ZrO ₂ film 12 is formed has been described. As long as it has an insulating function and does not impair the function of the piezoelectric actuator, the forming material is not particularly limited, and can be arbitrarily determined such as a one-layer structure or a three-layer structure or more.

  In the present embodiment, ions are implanted to form the conductive layer 16. However, as described above, these ions are implanted with, for example, a kind of ions such as Ir, Pt, W, Ta, and Mo. Two types of ions such as Mo / Si, W / Si, Ti / N, and Ti / W may be implanted. In addition, the first ions may be implanted into the lower layer portion of the conductive layer 16 at a desired concentration, and the second ions may be implanted into the upper layer (surface side) at a higher concentration than the first ions. In this case, the first ion and the second ion may be different ions or the same ion. Moreover, the ion implantation (implantation) conditions are not limited to the above-described conditions, and can be determined as desired. Further, ion implantation conditions such as the amount of ions implanted into the first conductive film 15, the second conductive film 27, and the adhesion film 26 and the implantation voltage can be arbitrarily determined.

Furthermore, in the present embodiment, the case where the SiO ₂ film 33 is formed as a protective film having resistance to the ink stored in the pressure generating chamber 30 has been described. For example, a material for forming the SiN _x film, TaO _x film, or the like can be arbitrarily selected. Moreover, it can also be set as the multilayer structure which consists of a different material film | membrane.

  The present embodiment can be applied not only to an actuator mounted as liquid ejecting means on such a liquid ejecting head (inkjet recording head) but also to an actuator device mounted on any device. For example, the actuator device can be applied to a sensor or the like in addition to the head described above. In this embodiment, an ink jet recording head that discharges ink as an example of a liquid ejecting head has been described as an example. However, the present invention broadly covers liquid ejecting heads and liquid ejecting apparatuses in general. Examples of the liquid ejecting head include a recording head used in an image recording apparatus such as a printer, a color material ejecting head used for manufacturing a color filter such as a liquid crystal display, an organic EL display, and an electrode formation such as an FED (surface emitting display). Electrode material ejecting heads used in manufacturing, bioorganic matter ejecting heads used in biochip production, and the like.

FIG. 2 is an exploded perspective view of a liquid ejecting head including a piezoelectric actuator according to a preferred embodiment of the present invention. FIG. 2 is a plan view illustrating a part near a piezoelectric actuator of the liquid jet head illustrated in FIG. FIG. 4 is a cross-sectional view illustrating a part of the manufacturing process of the liquid jet head illustrated in FIG. 1. FIG. 4 is a cross-sectional view illustrating a part of the manufacturing process of the liquid jet head illustrated in FIG. 1. FIG. 4 is a cross-sectional view illustrating a part of the manufacturing process of the liquid jet head illustrated in FIG. 1. FIG. 4 is a cross-sectional view illustrating a part of the manufacturing process of the liquid jet head illustrated in FIG. 1. FIG. 4 is a cross-sectional view illustrating a part of the manufacturing process of the liquid jet head illustrated in FIG. 1. FIG. 4 is a cross-sectional view illustrating a part of the manufacturing process of the liquid jet head illustrated in FIG. 1. FIG. 2 is a perspective view illustrating an outline of an ink jet recording apparatus on which the liquid ejecting head illustrated in FIG. 1 is mounted. It is sectional drawing which shows a part of manufacturing process concerning other embodiment of this invention. It is sectional drawing which shows a part of manufacturing process concerning other embodiment of this invention.

Explanation of symbols

10 the flow path forming substrate, 11 SiO ₂ film, 12 ZrO ₂ film, 13 lower electrode, 14 piezoelectric film 15 the first conductive film, 16 a conductive layer, 17 an upper electrode forming film, 18 the piezoelectric layer, the upper 19 Electrode, 25 elastic membrane, 30 pressure generating chamber, 100 piezoelectric actuator

Claims (6)

A piezoelectric actuator comprising: a diaphragm including an insulating film and a lower electrode formed on the insulating film; a piezoelectric layer formed on the diaphragm; and an upper electrode formed on the piezoelectric layer A manufacturing method of
Forming an insulating film on the substrate;
Forming a lower electrode on the insulating film;
Forming a piezoelectric film on the lower electrode;
Forming a first conductive film on the piezoelectric film;
Through the first conductive film, ions are implanted into at least the interface between the piezoelectric film and the first conductive film to form a conductive layer, and the upper electrode forming film provided with the first conductive film and the conductive layer Comprising the steps of:
Patterning the piezoelectric film and the upper electrode forming film to form a piezoelectric layer and an upper electrode;
A method for manufacturing a piezoelectric actuator comprising:   The step of forming the first conductive film includes a step of forming an adhesion film on the piezoelectric film and a step of forming a second conductive film on the adhesion film. The manufacturing method of the piezoelectric actuator of description.   The method for manufacturing a piezoelectric actuator according to claim 1, wherein the ions are further implanted into the first conductive film side of the piezoelectric film.   The piezoelectric actuator manufactured by the manufacturing method of the piezoelectric actuator as described in any one of Claims 1 thru | or 3. A piezoelectric actuator according to claim 4;
A pressure generating chamber whose internal volume changes due to mechanical displacement of the piezoelectric actuator;
A discharge port for discharging droplets in communication with the pressure generation chamber;
A liquid ejecting head comprising: A liquid ejecting head according to claim 5;
A driving device for driving the liquid jet head;
A liquid ejecting apparatus comprising:

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