JP2006228633A - Manufacturing method of substrate heater, and the substrate heater - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a substrate heater for which the resistance value of a resistance heating element can be adjusted with superior precision, and in which uniform heating properties on the substrate heating face can be secured. <P>SOLUTION: A ceramic sintered body is fabricated (S101). The resistance heating element is formed on the ceramic sintered body (S102). A ceramic molded body is laminated, and the ceramic sintered body, the resistance heating element, and the ceramic molded body are integrally calcined (S103). The base body and a tubular member are jointed (S105). The resistance heating element and a terminal are connected (S106). Temperature distribution on the substrate heating face of the heater is measured before treatment (S107). The resistance value is adjusted, by carrying out transformation treatment which makes the resistance heating element (S108) transform. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a substrate heating apparatus and a substrate heating apparatus.

Conventionally, a ceramic heater is used to heat a substrate in semiconductor manufacturing or liquid crystal manufacturing. The heater is required to maintain the substrate heating surface at a uniform temperature in order to obtain a homogeneous semiconductor product. For this reason, various techniques for ensuring heat uniformity have been proposed. For example, a technique for forming a notch or a groove in a resistance heating element formed on a ceramic substrate surface by machining has been proposed (see, for example, Patent Documents 1 to 3). Patent Documents 1 to 3 disclose a method for manufacturing a heater in which a metal coating layer is formed after performing a process of removing a part of a resistance heating element formed on a ceramic substrate surface.
JP 2002-175867 A JP 2002-203666 A JP 2002-246155 A

  However, in the method of adjusting the resistance value of the resistance heating element only by machining the notch or the groove, it may be difficult to accurately adjust the resistance value of the resistance heating element to ensure the uniformity of the heating surface of the substrate. It was. Further, depending on the shape of the resistance heating element, there is a case where it is difficult to process for strictly adjusting the resistance value. Furthermore, depending on the contents of the process after the formation of the resistance heating element, even if the resistance value is adjusted at the time of forming the resistance heating element, the resistance value may fluctuate in the subsequent processes, and there is a possibility that the heat uniformity cannot be maintained. .

  Therefore, the present invention provides a method for manufacturing a substrate heating apparatus capable of accurately adjusting the resistance value of the resistance heating element and ensuring the temperature uniformity of the substrate heating surface, and the substrate heating in which the temperature uniformity of the substrate heating surface is ensured. An object is to provide an apparatus.

  The method for manufacturing a substrate heating apparatus according to the present invention includes a step of forming a substrate having a resistance heating element and having a substrate heating surface, and a step of adjusting a resistance value of the resistance heating element by a degeneration process for altering the resistance heating element. It is characterized by having. According to such a manufacturing method, since the resistance value is adjusted by changing the resistance heating element, the resistance value of the resistance heating element can be adjusted with high accuracy, and the heat uniformity of the substrate heating surface can be ensured.

  For example, the adjustment of the resistance value can be performed by an alteration process that alters the resistance heating element by irradiating a laser beam. According to this, it is possible to easily adjust the resistance value with high accuracy regardless of the shape of the resistance heating element.

  It is preferable to produce a substrate in which a resistance heating element is embedded. A resistance heating element simply covered with a metal coating layer as in the past has deteriorated quickly due to oxidation or corrosion by a corrosive gas, and has low durability. On the other hand, by embedding the resistance heating element in the substrate, the resistance heating element can be prevented from being deteriorated and its durability can be improved.

  Furthermore, it is preferable to adjust the resistance value by performing an alteration process after the substrate is manufactured. According to this, it can prevent that a resistance value fluctuates by the process after resistance heating element formation, and can maintain the thermal uniformity obtained by resistance value adjustment.

  In particular, it is preferable to measure the temperature distribution on the substrate heating surface and adjust the resistance value by performing a modification process according to the measurement result of the temperature distribution. According to this, in consideration of the temperature distribution on the actual substrate heating surface, the resistance value can be adjusted with very high accuracy, and the thermal uniformity of the substrate heating surface can be ensured more appropriately.

  Further, in the step of manufacturing the base body, processing for removing a part of the resistance heating element may be performed. According to this, the resistance value of the resistance heating element can be adjusted to some extent by processing. Therefore, the resistance value can be appropriately adjusted together with the adjustment of the resistance value by the alteration process.

  Furthermore, the substrate is preferably an aluminum nitride sintered body. According to this, higher thermal uniformity can be realized by high thermal conductivity, and corrosion resistance can also be improved. Further, when the alteration treatment is performed by laser beam irradiation, the aluminum nitride sintered body has translucency, so that there is an advantage that the resistance value can be adjusted appropriately even if the resistance heating element is embedded in the base.

  A substrate heating apparatus according to the present invention includes a substrate having a substrate heating surface, and a resistance heating element formed on the substrate and having a resistance value adjusted by a modification process. According to such a substrate heating apparatus, it is possible to ensure the thermal uniformity of the substrate heating surface. For example, the resistance value of the resistance heating element is preferably adjusted by an alteration process by irradiation with laser light. According to this, the substrate heating device can be adjusted with a highly accurate resistance value by the laser beam, and can have high thermal uniformity.

  The resistance heating element is preferably embedded in the substrate. According to this, the resistance heating element can be prevented from being deteriorated and its durability can be improved. The resistance heating element may have at least one of a notch or a groove. According to this, the substrate heating apparatus can ensure the thermal uniformity of the substrate heating surface by the adjustment by the notch or the groove and the adjustment by the alteration process.

  Furthermore, the substrate is preferably an aluminum nitride sintered body. According to this, the substrate heating device can realize higher heat uniformity with high thermal conductivity, and can also improve the corrosion resistance. In addition, when the alteration treatment is performed by laser light irradiation, since the aluminum nitride sintered body has translucency, an appropriate resistance value can be adjusted even if the resistance heating element is embedded in the base body. There is also an advantage of being able to provide soaking.

  As described above, according to the present invention, the resistance value of the resistance heating element can be adjusted with high accuracy, and the substrate heating apparatus manufacturing method capable of ensuring the temperature uniformity of the substrate heating surface and the temperature uniformity of the substrate heating surface. Can provide a substrate heating apparatus in which

(Substrate heating device)
As shown in FIG. 1, the substrate heating apparatus 10 includes a base body 11, a resistance heating element 12, a tubular member 13, and a terminal 14.

  The base 11 is formed with a resistance heating element 12 and has a substrate heating surface 10a. A substrate such as a silicon wafer or a glass substrate is placed on the substrate heating surface 10a. The resistance heating element 12 is formed on the base 11, and the resistance value is adjusted by the alteration process. The resistance value of the resistance heating element 12 is adjusted by, for example, alteration processing by laser light irradiation. The resistance heating element 12 generates heat when power is supplied. Therefore, the substrate placed on the substrate heating surface 10a is heated. As shown in FIG. 1, it is preferable that a resistance heating element 12 is embedded in the base 11. According to this, deterioration of the resistance heating element 12 can be prevented, and its durability can be improved.

  The tubular member 13 accommodates the terminal 14 in the tube. The tubular member 13 is bonded to the surface 10b of the base 11 opposite to the substrate heating surface 10a. The terminal 14 supplies power to the resistance heating element 12. The terminal 14 is connected to the resistance heating element 12.

Next, the base 11 and the resistance heating element 12 will be described in detail. The substrate 11 can be a plate-shaped member such as a disk. The substrate 11 can be made of ceramic, metal, a composite material of ceramic and metal, or the like. For example, the base 11 is made of a sintered body such as aluminum nitride (AlN), alumina (Al ₂ O ₃ ), silicon nitride (SiN), silicon carbide (SiC), sialon (SiAlON), aluminum (Al), aluminum alloy, An aluminum alloy-aluminum nitride composite, an aluminum alloy-SiC composite, or the like can be used. The substrate 11 is preferably made of ceramics. According to this, the substrate heating apparatus excellent in heat resistance and corrosion resistance can be provided.

  In particular, the substrate 11 is preferably made of an aluminum nitride sintered body. According to this, the substrate heating apparatus 10 can realize the substrate heating surface 10a having very high temperature uniformity due to the high thermal conductivity, and can also improve the corrosion resistance. In addition, when the resistance heating element 12 is subjected to an alteration treatment by laser light irradiation, the aluminum nitride sintered body has translucency, so that even if the resistance heating element 12 is embedded in the substrate as shown in FIG. There is also an advantage that the resistance value can be adjusted appropriately.

  The material of the tubular member 13 is preferably the same type as the material of the base 11. According to this, it is possible to prevent occurrence of thermal stress due to a difference in thermal expansion coefficient or the like at the joint portion between the base body 11 and the tubular member 13 and to firmly join the tubular member 13.

  Further, the surface roughness (Ra) of the substrate heating surface 10a is preferably 0.4 to 2.0 μm. According to this, the substrate heating surface 10a and the substrate can be appropriately brought into contact with each other to keep the substrate temperature uniform. The surface roughness (Ra) is more preferably 0.8 to 1.2 μm. Further, the substrate heating surface 10a may be provided with an emboss, a groove, a step, and the like.

  In particular, when the substrate 11 is made of ceramic, the average particle diameter is preferably 0.5 to 15 μm. According to this, uniform processing can be performed when the resistance heating element 12 embedded in the substrate 11 is subjected to alteration processing from the outside of the substrate. For example, when the base 11 is made of a translucent ceramic such as translucent aluminum nitride or translucent alumina, and the resistance heating element 12 is altered by irradiating laser light from the outside of the base 11, laser light is used. Can hit the grain boundary and reduce the rate at which the strength decreases. Therefore, it is possible to prevent variations in the intensity of the laser light applied to the target portion of the resistance heating element 12, and it is possible to uniformly alter the quality by applying the laser light uniformly. The average particle size is more preferably 1 to 10 μm.

Moreover, when the base | substrate 11 is comprised with an aluminum nitride sintered compact, it is preferable that a density is 3.0-3.5 g / cm < ³ >. According to this, uniform processing can be performed when the resistance heating element 12 embedded in the substrate 11 is subjected to alteration processing from the outside of the substrate. For example, when the resistance heating element 12 is altered by irradiating a laser beam from the outside of the substrate 11, the rate at which the laser beam hits the pores and the strength thereof decreases can be reduced. Therefore, it is possible to prevent variations in the intensity of the laser light applied to the target portion of the resistance heating element 12, and it is possible to uniformly alter the quality by applying the laser light uniformly. The density is more preferably 3.2 to 3.4 g / cm ³ .

  The resistance heating element 12 can be made of a high melting point material such as molybdenum (Mo), tungsten (W), tungsten carbide (WC) or the like. The form of the resistance heating element 12 is not limited. For example, the resistance heating element 12 is formed by printing a printing paste containing a powder of a high melting point material, a foil (sheet), a thin film formed by physical vapor deposition or chemical vapor deposition, a wire , Coiled, belt-like, and mesh-like bulk bodies can be used.

  The pattern shape of the resistance heating element 12 is not limited, and a plurality of arc portions 12a arranged concentrically as shown in FIG. 1B and a plurality of end portions 12c of adjacent arc portions 12a are connected. A shape having the folded portion 12b can be used. Each arc portion 12a connects an end portion 12c opposite to the end portion 12c connected to the arc portion 12a adjacent to the inside of the arc portion 12a to the arc portion 12a adjacent to the outside of the arc portion 12a. Further, the circular arc portion 12d of the circumferential portion makes a substantially round. In addition to the folded shape having such folded portions, a spiral shape, a concentric circular shape, or the like can be used as the pattern shape of the resistance heating element 12. Further, the resistance heating element 12 may be one, or may be divided into a plurality. For example, the resistance heating element can be divided into two regions, that is, a central portion and a circumferential portion of the substrate heating surface 10a.

  The end of the resistance heating element 12 is connected to the terminal 14. For example, as shown in FIG. 1B, the resistance heating element 12 can be formed such that its two ends can be connected to the two terminals 14 at the approximate center of the base 11. When the resistance heating element 12 has a spiral shape, one end of the resistance heating element 12 is connected to the terminal 14 at substantially the center of the base 11 and the other end is near the circumference of the base 11. So that it can be connected to the terminal 14.

  The resistance value of the resistance heating element 12 is adjusted by alteration processing. For example, when the temperature distribution (in-plane temperature distribution) of the substrate heating surface 10a is not uniform due to variations in the resistance value of the resistance heating element 12, the resistance heating element 12 has a temperature other than that of the other portion. Compared to the above, the portion that was at a low temperature has been subjected to alteration treatment, and the resistance value of the altered portion has been increased. In the portion where the resistance value is increased, the calorific value is increased as compared with that before the alteration treatment. By adjusting the resistance value as described above, the temperature distribution on the substrate heating surface 10a is uniform, and the thermal uniformity is ensured.

  For example, the resistance value of the resistance heating element 12 is adjusted by an alteration process by irradiation with laser light. According to this, the substrate heating apparatus 10 can be provided with high thermal uniformity by receiving a highly accurate resistance value adjustment by laser light.

  For example, when the resistance heating element 12 of tungsten or tungsten carbide is irradiated with laser light, tungsten or tungsten carbide in the irradiated portion is carbonized. Tungsten and tungsten carbide have a resistance value higher than that before carbonization (before irradiation) due to carbonization. When the molybdenum resistance heating element 12 is irradiated with laser light, the molybdenum in the irradiated portion is carbonized. Molybdenum has a resistance value higher than that before carbonization (before irradiation) due to carbonization.

  The resistance heating element 12 may be locally subjected to alteration processing as described above, or may be subjected to alteration processing as a whole. Further, the resistance heating element 12 may have an increased resistance value or a decreased resistance value compared to before the alteration process. Furthermore, the thickness of the resistance heating element 12 is preferably 5 to 500 μm. A more preferable thickness of the resistance heating element 12 is 20 to 350 μm.

  Furthermore, as shown in FIG. 2, the resistance heating element 12 may have at least one of a notch 12e or a groove 12f. According to this, the substrate heating apparatus 10 can ensure the thermal uniformity of the substrate heating surface 10a by adjusting the resistance value by the notch 12e and the groove 12f and adjusting the resistance value by the alteration process.

  The shape of the notch 12e and the groove 12f is not limited, and the resistance value only needs to be adjusted by removing a part of the resistance heating element 12. In particular, the resistance heating element 12 is likely to vary in resistance value when it is formed by printing or meshed. Therefore, the notches 12e and the grooves 12f can be selected and formed by adjusting the resistance value by providing the notches 12e and the grooves 12f.

  The depth of the notch 12e and the groove 12f is preferably 90% or less of the thickness of the resistance heating element 12. According to this, disconnection of the notch 12e and the groove 12f and damage to the base body 11 can be prevented, and a desired resistance value can be adjusted.

(Production method)
A method for manufacturing the substrate heating apparatus 10 shown in FIG. 1 will be described with reference to FIGS. Here, a case where a ceramic sintered body is used as the base 11 and the tubular member 13 will be described as an example.

  First, a plate-like ceramic sintered body 11a such as a disk shape as shown in FIG. 4A is produced (S101). The ceramic sintered body 11a is prepared by mixing a ceramic raw material powder as a main component, a sintering aid, a binder, water, a dispersant, and the like. The obtained slurry is granulated by spray granulation or the like to obtain granulated granules. The obtained granulated granules are molded by a molding method such as a mold molding method, a CIP (Cold Isostatic Pressing) method, a slip casting method or the like. The obtained sintered body is fired by an atmosphere, firing temperature, firing time, and firing method according to the type of ceramic, whereby the ceramic sintered body 11a can be produced.

For example, when aluminum nitride powder is used as the ceramic raw material powder, it is kept at 1600-2200 ° C. for about 1-15 hours in an inert gas atmosphere such as nitrogen gas or argon gas using a hot press method. Can be fired. The pressure applied during firing can be ²⁰ to 1000 kg / cm ² . The firing temperature is preferably 1700-1900 ° C., and the pressure is preferably 50 kg / cm ² or more.

  Next, as shown in FIG. 4A, the resistance heating element 12 is formed on the ceramic sintered body 11a (S102). For example, a printing paste containing powder of a high melting point material such as molybdenum (Mo), tungsten (W), niobium (Nb), tungsten carbide (WC) is prepared, and the surface of the ceramic sintered body 11a is predetermined by a screen printing method or the like. The resistance heating element 12 can be formed by printing so as to have the pattern shape. In this case, it is preferable to mix the ceramic raw material powder of the ceramic sintered body 11a with the printing paste. According to this, the coefficient of thermal expansion between the resistance heating element 12 and the ceramic sintered body 11a can be made closer, and the adhesion between them can be improved.

  Further, the resistance heating element 12 can be formed by placing a high melting point material foil, linear, coiled, or strip-shaped bulk body on the ceramic sintered body 11a. Alternatively, a thin film of a high melting point material may be formed on the surface of the ceramic sintered body 11a by physical vapor deposition or chemical vapor deposition.

  At this time, as shown in FIG. 4A, processing for removing a part of the resistance heating element 12 may be performed. For example, the resistance heating element 12 can be partially removed by laser processing or machining. Specifically, the laser irradiation device 5 is used to irradiate the laser beam 5a to the portion whose resistance value is to be changed, thereby forming the notch 12e and the groove 12f as shown in FIG. For example, by controlling the laser irradiation device 5 and adjusting the irradiation position, intensity (irradiation output), irradiation time, operating frequency, and the like of the laser light 5a, the notch 12e and the groove 12f having a desired shape can be formed.

  Further, in order to process the resistance heating element 12 without adversely affecting the ceramic sintered body 11a by the laser light irradiation, the laser irradiation device 5 is easily absorbed by the resistance heating element 12, and the ceramic sintered body 11a It is preferable to use one that can irradiate the laser beam 5a that is difficult to absorb. For example, as the laser irradiation device 5, a YAG laser, a carbon dioxide gas laser, an excimer laser, or the like can be used.

  Alternatively, as shown in FIG. 4A, using a machining machine 6 such as a machining center, a portion whose resistance value is to be changed by grinding or cutting is removed, and a notch 12e as shown in FIG. And the groove 12f can be formed. It is preferable to use a processing method such as sand blasting or shot peening in order to process the resistance heating element 12 without adversely affecting the ceramic sintered body 11a such as machining fluid and machining heat.

  Furthermore, the form of the resistance heating element 12, that is, whether it is formed by printing, foil, thin film, or bulk body, the pattern shape and material of the resistance heating element 12, and the substrate heating apparatus 10 to be manufactured According to the use conditions, the area and shape of the substrate heating surface 10a, etc., how the temperature distribution of the substrate heating surface 10a changes is actually produced and evaluated, and statistics thereof are taken. It is possible to investigate in advance by performing a simulation. And the part to remove based on the investigation result can be determined. Alternatively, the resistance value of the resistance heating element 12 can be measured, and the removed portion can be determined based on the measurement result. For example, a part having a lower resistance value than the other part of the resistance heating element 12 can be determined as the removal part. Thereby, the resistance value of a removal part can be increased and the dispersion | variation in resistance value can be corrected.

  By performing the process of removing a part of the resistance heating element 12 in this way, the resistance value can be adjusted to some extent before the resistance heating element 12 is embedded in the base 11. Therefore, nonuniform temperature distribution due to resistance value variation can be minimized, and the resistance value can be appropriately adjusted together with the adjustment of the resistance value by the alteration process.

  Next, as shown in FIG. 4B, a ceramic molded body 11b is laminated on the ceramic sintered body 11a on which the resistance heating element 12 is formed, and the ceramic sintered body 11a, the resistance heating element 12, and the ceramics are laminated. The molded body 11b is integrally fired (S103). For example, the ceramic sintered body 11a in which the resistance heating element 12 is formed is set in a mold or the like. The resistance heating element 12 and the ceramic sintered body 11a can be filled with granulated granules prepared in the same manner as when the ceramic sintered body 11a is manufactured, and the ceramic molded body 11b can be molded and laminated at the same time. Alternatively, the ceramic molded body 11b may be laminated by preparing a molded body using the granulated granules and placing the molded body on the ceramic sintered body 11a and the resistance heating element 12 and press-molding.

  Then, the ceramic sintered body 11a, the resistance heating element 12, and the ceramic molded body 11b are integrally fired by a firing method such as a hot press method or an atmospheric pressure sintering method, as shown in FIG. An integrally sintered body 11 can be produced. For example, the obtained molded body can be fired by an atmosphere, a firing temperature, a firing time, and a firing method according to the type of ceramic.

For example, when aluminum nitride powder is used as the ceramic raw material powder, it is held at 1600-2200 ° C. for about 1-15 hours in an inert gas atmosphere such as nitrogen gas or argon gas using a hot press method. Can be fired. The pressure applied during firing can be ²⁰ to 1000 kg / cm ² . According to this, the adhesion between the base 11 and the resistance heating element 12 can be improved. The firing temperature is preferably 1700-1900 ° C., and the pressure is preferably 50 kg / cm ² or more. Finally, the substrate 11 obtained is subjected to flattening of the substrate heating surface 10a, drilling of a terminal hole for connecting the terminal 14 to the resistance heating element 12, and the like.

  By such steps (S101) to (S103), the resistance heating element 12 is formed, and the base body 11 having the substrate heating surface 10a can be manufactured. Specifically, the base body 11 in which the resistance heating element 12 is embedded can be manufactured. A resistance heating element simply covered with a metal coating layer as in the past has deteriorated quickly due to oxidation or corrosion by a corrosive gas, and has low durability. On the other hand, by embedding the resistance heating element 12 in the base 11, the resistance heating element 12 can be prevented from being deteriorated and its durability can be improved.

  As in the steps (S101) and (S103), in the step relating to the production of the ceramic sintered body, the purity of the ceramic raw material powder, the average particle size, the kind of sintering aid, the firing temperature, firing time, firing method, etc. By adjusting conditions and the like, it is preferable to adjust the average particle diameter of the obtained substrate 11 to be 0.5 to 15 μm. According to this, as described above, when the alteration heating process is applied to the resistance heating element 12 embedded in the base body 11 from the outside, a uniform process can be performed. For example, when the resistance heating element 12 is altered by irradiating a laser beam from the outside of the translucent ceramic substrate 11, the rate at which the laser beam hits the grain boundary and the strength thereof decreases can be reduced. Therefore, a uniform alteration process can be performed by uniformly irradiating the target portion of the resistance heating element 12 with laser light. The average particle size is more preferably adjusted to 1 to 10 μm.

In the case of producing an aluminum nitride sintered body, it can be obtained by adjusting firing conditions such as purity and average particle diameter of ceramic raw material powder, kind of sintering aid, firing temperature and firing time, firing method, etc. It is preferable to adjust the density of the substrate 11 to be 3.0 to 3.5 g / cm ³ . According to this, as described above, when the alteration heating process is applied to the resistance heating element 12 embedded in the base body 11 from the outside, a uniform process can be performed. For example, when the resistance heating element 12 is altered by irradiating a laser beam from the outside of the substrate 11, the rate at which the laser beam hits the pores and the strength thereof decreases can be reduced. Therefore, a uniform alteration process can be performed by uniformly irradiating the target portion of the resistance heating element 12 with laser light. More preferably, the density is adjusted to 3.2 to 3.4 g / cm ³ .

  Further, the process of removing a part of the resistance heating element 12 in the step (S102) can be omitted. In that case, since it is not necessary to process the resistance heating element 12, a processing cost can be reduced and a manufacturing process can be simplified.

  Moreover, the resistance heating element 12 was embedded by producing a ceramic molding using the granulated granules, forming the resistance heating element 12 on the molding, and laminating the ceramic molding on the resistance heating element 12. A ceramic molded body may be produced. And the base | substrate 11 by which the resistance heating element 12 was embed | buried can be produced by baking the ceramic molded object and the resistance heating element 12 which were integrally shape | molded.

  In parallel with the production of the base body 11, the tubular member 13 is produced (S104). The tubular member 13 can be produced by preparing granulated granules, producing a tubular molded body, and firing the obtained molded body in the same manner as when the substrate 11 is produced. The tubular member 13 is preferably produced using a raw material powder made of the same material as the ceramic raw material powder used for producing the substrate 11.

  Next, the surface 10b opposite to the substrate heating surface 10a of the base 11 is joined to the tubular member 13 (S105). For example, the base body 11 and the tubular member 13 can be bonded by a solid phase bonding method, a liquid phase bonding method, or the like. Specifically, a bonding agent corresponding to the material of the substrate 11 or the tubular member 13 is applied to at least one of the bonding surface of the substrate 11 or the bonding surface of the tubular member 13. And it can join by bonding the joining surfaces of the base | substrate 11 and the tubular member 13, and performing heat processing by the atmosphere and temperature according to the material of the base | substrate 11 or the tubular member 13. FIG. At this time, you may pressurize so that the base | substrate 11 and the tubular member 13 may be pressed from a direction perpendicular | vertical to a joining surface.

  For example, when the base body 11 and the tubular member 13 are aluminum nitride sintered bodies, a rare earth compound or the like is applied as a bonding agent, and is 1 to 10 at 1500 to 2000 ° C. in an inert gas atmosphere such as nitrogen gas or argon gas. Solid phase bonding can be performed by maintaining the time. The base body 11 and the tubular member 13 may be joined by brazing or the like.

  Next, the terminal 14 is inserted into the tubular member 13 and inserted into a terminal hole formed in the base 11. Then, the resistance heating element 12 and the terminal 14 are connected by brazing, screwing, welding, or the like (S106). This makes it possible to supply power to the resistance heating element 12 and obtain a substrate heating apparatus before the alteration process (hereinafter referred to as “pre-treatment heating apparatus”).

  Next, the temperature distribution of the substrate heating surface 10a of the pre-treatment heating apparatus is measured (S107). Specifically, the temperature distribution on the substrate heating surface 10a of the pre-treatment heating apparatus is measured under the usage conditions in which the substrate heating apparatus 10 is actually used. For example, power is supplied to the resistance heating element 12 so that the substrate heating surface 10a reaches a set temperature, and the resistance heating element 12 is heated to measure the temperature distribution. The temperature distribution can be measured with an infrared radiation thermometer and a wafer equipped with a TC (Thermo Couple).

  Next, an alteration process for altering the resistance heating element 12 is performed to adjust the resistance value (S108). Specifically, alteration processing is performed according to the measurement result of the temperature distribution in the step (S107), and the resistance value is adjusted. For example, when power is supplied to the resistance heating element 12 of the pre-treatment heating apparatus so as to have a set temperature, the temperature distribution (in-plane temperature distribution) of the substrate heating surface 10a is caused by variations in the resistance value of the resistance heating element 12 and the like. In the case of non-uniformity, in order to make the temperature distribution uniform, the resistance heating element 12 is altered to determine a portion for adjusting the resistance value (hereinafter referred to as “altered portion”).

  For example, in the case where the resistance value is increased by the alteration process to increase the amount of generated heat, a part of the substrate heating surface 10a that is cooler than other parts, the periphery of the low temperature part, and the like can be determined as the alteration process part. . In this case, the amount of heat generated in the altered portion where the resistance value has been increased by the alteration treatment is greater than that before the alteration treatment. As a result, the temperature distribution on the substrate heating surface 10a can be made substantially uniform, and soaking can be ensured.

  Further, when the resistance value is decreased by the alteration process to reduce the amount of heat generation, a part of the substrate heating surface 10a that is higher in temperature than other parts, the periphery of the high temperature part, etc. can be determined as the alteration process part. . In this case, the calorific value of the altered portion where the resistance value has been reduced by the alteration treatment is reduced as compared with that before the alteration treatment. As a result, the temperature distribution on the substrate heating surface 10a can be made substantially uniform, and soaking can be ensured.

  Further, from the measurement result of the temperature distribution, the maximum temperature and the minimum temperature of the substrate heating surface 10a, the temperature of each area, the temperature difference between the areas, the maximum temperature difference in the surface, the temperature difference from the set temperature, etc. are obtained, and these information The alteration processing portion may be determined based on the above. Further, considering the material and form of the resistance heating element 12, the pattern shape, the adjustment state of the resistance value by the notch or groove, the use conditions of the substrate heating apparatus 10 to be manufactured, the area and shape of the substrate heating surface 10 a, etc. The alteration processing portion may be determined.

  For example, the adjustment of the resistance value can be performed by an alteration process that alters the resistance heating element by irradiating a laser beam. According to this, it is possible to easily adjust the resistance value with high accuracy regardless of the shape of the resistance heating element 12. Specifically, as shown in FIG. 5, the alteration treatment portion is irradiated with the laser beam 5 a from the outside of the base 11 in which the resistance heating element 12 is embedded using the laser irradiation device 5. Can be altered. For example, by controlling the laser irradiation device 5 and adjusting the irradiation position, intensity (irradiation output), irradiation time, operating frequency, and the like of the laser beam 5a, a desired alteration process can be performed.

  For example, when the resistance heating element 12 is tungsten or tungsten carbide, a modification process is performed to carbonize tungsten or tungsten carbide in the modified process part by irradiation with the laser beam 5a. Thereby, the resistance value of the altered portion is increased more than before carbonization (before irradiation). Further, when the resistance heating element 12 is molybdenum, a modification process for carbonizing the molybdenum in the modified process part is performed by irradiation with the laser beam 5a. Thereby, the resistance value of the altered portion is increased more than before carbonization (before irradiation).

  Further, in order to change the resistance heating element 12 without adversely affecting the ceramic sintered body constituting the substrate 11 by the laser light irradiation, the laser irradiation apparatus 5 is easily absorbed by the resistance heating element 12, and the ceramic heating body It is preferable to use a laser beam that can be irradiated with a laser beam 5a that is not easily absorbed by the body. For example, as the laser irradiation device 5, a YAG laser, a carbon dioxide gas laser, an excimer laser, or the like can be used. Further, by adjusting the laser beam irradiation output, it is possible to reduce the laser beam from passing through the resistance heating element 12 and to avoid damage to the substrate 11.

The degree of alteration of the resistance heating element 12 includes the temperature distribution measurement result of the substrate heating surface 10a, the maximum and minimum temperatures obtained from the temperature distribution measurement result, the temperature of each area, the temperature difference between the areas, and the in-plane maximum temperature. Difference, temperature difference from set temperature, material and form of resistance heating element 12, pattern shape, adjustment state of resistance value by notch or groove, usage condition of substrate heating apparatus 10 to be manufactured, area of substrate heating surface 10a And can be adjusted based on the shape and the like. From the viewpoint of adjusting the temperature distribution, it is preferable to change the quality of the resistance heating element 12 before the alteration treatment by 3 to 50% from the state of the alteration treatment portion. For example, when carbonizing the resistance heating element 12 of tungsten or tungsten carbide, it is preferable to increase the carbonization degree of the resistance heating element 12 before carbonization by 5% or more. The degree of carbonization can be evaluated by, for example, average reflectance R ₀ (JIS M 8816) or EDS analysis (Energy-Dispersive X-ray Spectroscopy). When carbonizing the resistance heating element 12 made of molybdenum, it is preferable to increase the carbonization degree of the resistance heating element 12 before carbonization by 3% or more.

  Further, the required thermal uniformity varies depending on the application and use conditions of the substrate heating apparatus 10, but the resistance value is set so that the temperature difference within the substrate heating surface 10 a can be ± 5 ° C. or less in the temperature range of 50 to 800 ° C. Is preferably adjusted. Even if the resistance value is adjusted so that the temperature difference (To−Tc) between the temperature Tc at the center of the substrate heating surface 10a and the temperature To near the circumference of the substrate heating surface 10a can be ± 4 ° C. or less. Good. Further, the resistance value may be adjusted so that the temperature difference on the same circumference of the substrate heating surface 10a can be ± 2.5 ° C. or less. It should be noted that the resistance heating element 12 may be locally subjected to an alteration process or may be entirely subjected to an alteration process.

  Finally, the temperature distribution of the substrate heating surface 10a of the substrate heating apparatus 10 obtained by performing the alteration process on the resistance heating element 12 to adjust the resistance value is measured (S109). And it is confirmed whether the board | substrate heating surface 10a is equipped with the target thermal uniformity. At this time, if the target thermal uniformity is not obtained, the process returns to the step (S108) and the alteration process is performed again to adjust the resistance value.

  As described above, it is preferable to adjust the resistance value of the resistance heating element 12 by performing an alteration process after the substrate 11 is manufactured. According to this, it is possible to prevent the resistance value from fluctuating due to the process after the resistance heating element 12 is formed, and it is possible to maintain the thermal uniformity obtained by adjusting the resistance value by the alteration process.

  In particular, when the temperature distribution of the substrate heating surface 10a of the pre-treatment heating apparatus is measured, and the resistance value is adjusted by performing the alteration process according to the measurement result of the temperature distribution, the actual temperature distribution of the substrate heating surface 10a is changed. In consideration, the resistance value can be adjusted with very high accuracy, and the thermal uniformity of the substrate heating surface 10a can be more appropriately ensured. Since the temperature distribution of the substrate heating apparatus 10 may vary depending on the use conditions and the like, the resistance value is adjusted by performing the alteration process based on the temperature distribution measured under the actual use conditions. It is possible to ensure heat uniformity more reliably during use. In addition, even if the products have different temperature distributions due to various conditions in the manufacturing process, the resistance value can be adjusted by performing a suitable alteration process for each product. Can be secured.

  Note that the step (S107) may be omitted and the resistance heating element 12 of the pre-treatment heating apparatus may be subjected to a modification process. In FIG. 3, the alteration process is performed after the substrate 11 is manufactured. However, the alteration process may be performed when the resistance heating element 12 is formed, that is, in the step (S102). In these cases, the substrate heating surface depends on the form of the resistance heating element 12, the pattern shape and material of the resistance heating element 12, the use conditions of the substrate heating apparatus 10 to be manufactured, the area and shape of the substrate heating surface 10a, and the like. The temperature distribution of 10a changes in advance by actually manufacturing and evaluating a plurality of substrate heating apparatuses 10 and taking statistics or performing simulations. And the alteration process part can be determined based on the investigation result.

  For example, in the case of the substrate heating apparatus 10 having the tubular member 13, generally, the central portion of the substrate heating surface 10 a tends to be lower in temperature than the peripheral portion due to heat conduction to the tubular member 13. Therefore, for example, the position near the center of the substrate heating surface 10a can be determined as the alteration processing portion.

  Further, when the resistance heating element 12 is formed, the resistance value of the resistance heating element 12 is measured, and the alteration processing portion can be determined based on the measurement result. For example, a part having a lower resistance value than the other part of the resistance heating element 12 can be determined as the alteration processing part. When the resistance heating element 12 is processed and altered by the laser beam, it is possible to adjust whether it is to be altered or removed by adjusting the intensity (irradiation output), irradiation time, operating frequency, etc. of the laser beam.

  In FIG. 3, the case where a ceramic sintered body is used as the base 11 and the tubular member 13 has been described as an example. However, the base 11 and the tubular member 13 are made of a metal, a ceramic-metal composite material, or the like. In this case, the substrate 11 and the tubular member 13 can be manufactured by grinding or pressing.

  As described above, according to the method for manufacturing the substrate heating apparatus 10, the resistance value is adjusted by the alteration process for altering the resistance heating element 12, so that the resistance heating element is compared with the method of adjusting the resistance value only by processing. The resistance value of 12 can be adjusted with high accuracy. Therefore, it is possible to provide the substrate heating apparatus 10 in which the temperature uniformity of the substrate heating surface 10a is ensured. Even if the shape of the resistance heating element 12 is difficult to process for strictly adjusting the resistance value, the resistance value can be appropriately adjusted by altering the resistance heating element 12.

  Therefore, the substrate heating apparatus 10 can be suitably used for a semiconductor manufacturing apparatus or a liquid crystal manufacturing apparatus such as a CVD (Chemical Vapor Deposition) apparatus or an etching apparatus. In addition, it can respond to severe heat uniformity requirements and can respond to the increase in the substrate diameter.

  In addition, this invention is not limited to the said embodiment, A various change is possible. For example, the substrate heating device may include an electrode for functioning as an electrostatic chuck. In this case, the electrode can be embedded in the substrate in the same manner as the resistance heating element.

  EXAMPLES Next, although an Example demonstrates this invention further in detail, this invention is not limited to the following Example at all.

  First, 5% by weight of yttrium oxide as a sintering aid was added to 95% by weight of aluminum nitride powder and mixed using a ball mill. A binder was added to the obtained mixed powder and granulated by a spray granulation method. The obtained granulated granules were formed into a disk shape for the substrate 11 by a mold forming method. Further, the granulated granules were formed into a tubular shape for the tubular member 13 by the CIP method. The obtained disk-shaped molded body was fired at 1860 ° C. for 6 hours by hot pressing in nitrogen gas and the tubular molded body was fired at normal pressure in nitrogen gas.

  Next, a binder was mixed with a mixed powder of 80 wt% tungsten powder and 20 wt% aluminum nitride powder to prepare a printing paste. A resistance heating element 12 was formed on a disk-shaped aluminum nitride sintered body by screen printing and dried. The aluminum nitride sintered body in which the resistance heating element 12 was formed was set in a mold, and the granulated granule was filled on the aluminum nitride sintered body and the resistance heating element 12 to perform press molding.

Then, the integrally formed aluminum nitride sintered body, resistance heating element 12, and aluminum nitride formed body were set in a carbon sheath and fired by a hot press method. Specifically, while pressing at 50 kg / cm ² , firing was carried out integrally by holding at 2000 ° C. for 15 hours in a nitrogen pressure atmosphere (nitrogen 150 kPa).

  The obtained aluminum nitride sintered body was subjected to flattening processing of the substrate heating surface 10a, drilling of terminal holes, and the like. The size of the substrate 11 was 350 mm in diameter and 20 mm in thickness. The tubular member 13 had an outer diameter of 70 mm, an inner diameter of 60 mm, and a length of 180 mm.

  An aqueous solution of yttrium nitrate was applied as a bonding agent to the bonding surface of the substrate 11 and the tubular member 13, and both were bonded together and heat-treated in a nitrogen atmosphere at 1800 ° C. for 2 hours to bond the substrate 11 and the tubular member 13. . The terminal 14 was joined to the resistance heating element 12 by brazing to obtain a pre-treatment heating device.

  Power was supplied to the resistance heating element 12 so that the temperature of the substrate heating surface 10a of the pre-treatment heating apparatus was a set temperature of 650 ° C. And the temperature distribution of the substrate heating surface 10a was measured using the infrared radiation thermometer (thermoviewer). A measurement result of the temperature distribution is shown in FIG.

  The temperature distribution on the substrate heating surface 10a was roughly divided into four temperature areas. Specifically, the substrate heating surface 10a has an area 3 of 650 ° C. equal to the set temperature, an area 1 lower than the set temperature and the lowest temperature (hereinafter referred to as “cool area”) 1 in the substrate heating surface 10a, and a set value. It has an area 4 that is higher than the temperature and is the hottest area (hereinafter referred to as “hot area”) 4 in the substrate heating surface 10 a and a temperature area 2 between the cool area 1 and the area 3. The cool area 1 and the area 2 are located substantially at the center of the base body 11, and the vicinity of the center of the base body 11 has a low temperature. The hot area 4 is located in the vicinity of the circumferential portion of the base 11, and the vicinity of the peripheral portion of the base 11 is at a high temperature. The in-plane maximum temperature difference (temperature difference between the cool area 1 and the hot area 4) was 5.1 ° C. Furthermore, the maximum value of the temperature difference on the same circumference was 2.5 ° C.

  Based on the measurement result shown in FIG. 6 (a), as shown in FIG. 6 (b), the area 3a that faces the hot area 4 and surrounds the cool area 1 and the area 2 that are low in temperature, as shown in FIG. Area 1 was determined as the alteration processing portion. Using the carbon dioxide laser (laser processing apparatus) as a laser irradiation apparatus, the determined alteration processing part (area 3a and cool area 1) was irradiated with an irradiation output of 500 W and an irradiation time of 20 seconds. In this way, the resistance value was adjusted by performing the alteration process of altering the alteration process portion (area 3a and cool area 1) of the resistance heating element 12. Specifically, the resistance heating element 12 made of tungsten was carbonized, and the resistance value of the altered portion (area 3a and cool area 1) was increased, so that the substrate heating apparatus 10 with the adjusted resistance value was manufactured.

  FIG. 6C shows the measurement result of the temperature distribution of the substrate heating surface 10a of the substrate heating apparatus 10 after the resistance value adjustment by the alteration process. As a result of an increase in the resistance value of the altered portion and an increase in the amount of heat generated before the alteration (before carbonization), the temperature distribution on the substrate heating surface 10a was almost uniform. Specifically, it was possible to obtain the substrate heating surface 10a in which the cool area 1 is almost removed and the area 3 equal to the set temperature occupies most of the area. The in-plane maximum temperature difference (temperature difference between area 2 and hot area 4) was 3.2 ° C. Furthermore, the maximum value of the temperature difference on the same circumference was 2.0 ° C. That is, the in-plane maximum temperature difference was improved by 1.9 ° C., and the temperature difference on the same circumference could be improved by 0.5 ° C. Thus, the substrate heating apparatus 10 having extremely high heat uniformity could be produced.

It is (a) 1a-1a sectional view and (b) top view showing a substrate heating device concerning an embodiment of the invention. It is the elements on larger scale of the resistance heating element which concerns on embodiment of this invention. It is a flowchart which shows the procedure of the manufacturing method which concerns on embodiment of this invention. It is a figure which shows the preparation methods of the base | substrate which concerns on embodiment of this invention. It is a figure which shows the quality change process of the resistance heating element which concerns on embodiment of this invention. It is a figure which shows the (a) (c) temperature distribution change and (b) alteration process part of the Example of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 5 ... Laser irradiation apparatus 6 ... Machine tool 10 ... Substrate heating apparatus 11 ... Base | substrate 12 ... Resistance heating element 12e ... Notch part 12f ... Groove part 13 ... Tubular member 14 ... Terminal

Claims (12)

Forming a substrate having a resistance heating element and having a substrate heating surface;
And a step of adjusting a resistance value of the resistance heating element by a modification process for changing the quality of the resistance heating element.   The method for manufacturing a substrate heating apparatus according to claim 1, wherein the resistance value is adjusted by irradiating the resistance heating element with a laser beam to perform the alteration process.   The method for manufacturing a substrate heating apparatus according to claim 1, wherein the base body in which the resistance heating element is embedded is manufactured.   4. The method for manufacturing a substrate heating apparatus according to claim 1, wherein the resistance value is adjusted by performing the alteration treatment after the substrate is manufactured. 5. Measuring the temperature distribution of the substrate heating surface,
The method for manufacturing a substrate heating apparatus according to claim 4, wherein the resistance value is adjusted by performing the alteration process according to a measurement result of the temperature distribution.   The method for manufacturing a substrate heating apparatus according to claim 1, wherein in the step of manufacturing the base body, a process of removing a part of the resistance heating element is performed.   The method for manufacturing a substrate heating apparatus according to claim 1, wherein the base is an aluminum nitride sintered body. A substrate having a substrate heating surface;
A substrate heating apparatus, comprising: a resistance heating element formed on the substrate and having a resistance value adjusted by an alteration process.   9. The substrate heating apparatus according to claim 8, wherein the resistance value of the resistance heating element is adjusted by the alteration process by laser light irradiation.   10. The substrate heating apparatus according to claim 8, wherein the resistance heating element is embedded in the base.   The substrate heating apparatus according to claim 8, wherein the resistance heating element has at least one of a notch or a groove. The substrate heating apparatus according to claim 8, wherein the base body is an aluminum nitride sintered body.