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JP2006196648A - Electronic component having external junction electrode and manufacturing method thereof - Google Patents

Electronic component having external junction electrode and manufacturing method thereof Download PDF

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JP2006196648A
JP2006196648A JP2005006202A JP2005006202A JP2006196648A JP 2006196648 A JP2006196648 A JP 2006196648A JP 2005006202 A JP2005006202 A JP 2005006202A JP 2005006202 A JP2005006202 A JP 2005006202A JP 2006196648 A JP2006196648 A JP 2006196648A
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gold
nickel
electronic component
film
plating
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Setsuo Ando
節夫 安藤
Fumitake Taniguchi
文丈 谷口
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Proterial Ltd
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Hitachi Metals Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a junction electrode having both of solder junction reliability and improved gold wire-bonding properties inexpensively, and to provide a reliable and low-cost electronic component manufactured using a method for manufacturing the junction electrode. <P>SOLUTION: The electronic component having the external junction electrode comprises a ceramic base; an external connection electrode section formed on the ceramic base; an underlayer made of a metal film mainly comprising nickel or a nickel alloy formed on the surface of the external connection electrode section; an intermediate layer comprising palladium or a palladium alloy formed on the surface of the underlayer; and a surface covering layer comprising gold or a gold alloy formed on the surface of the intermediate layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は電子部品の接合電極およびその製造方法に関し、例えばセラミック材料で形成された基体の表面に接合電極が形成されたセラミック電子部品と、その接合電極製造方法に関する。   The present invention relates to a bonding electrode for an electronic component and a method for manufacturing the same, for example, a ceramic electronic component in which a bonding electrode is formed on the surface of a substrate formed of a ceramic material, and a method for manufacturing the bonding electrode.

携帯電子機器の小型化に伴い、半導体パッケージは高密度実装可能なBall Grid Array(BGA)タイプが普及しつつある。半導体チップは金ワイヤボンディングによりパッケージ基板と接続され、パッケージ基板ははんだ接合によりマザーボードと接続される。   With the downsizing of portable electronic devices, semiconductor packages are becoming popular in the Ball Grid Array (BGA) type that can be mounted at high density. The semiconductor chip is connected to the package substrate by gold wire bonding, and the package substrate is connected to the mother board by solder bonding.

金ワイヤボンディングやはんだ接続信頼性確保のために、基材の表面に形成された導電体の電極上には例えば、特開2003-183843号記載のリン系ニッケルめっきおよび金めっきを施している。また特開平10-135607号ではボロン系ニッケルめっきを併用した2層ニッケルおよび金めっき技術が提案されている。これらの技術によるとはんだ接合時には最表面の金膜で濡れ性を確保するとともに、ニッケル膜ではんだとの合金層を形成し良好な接合強度が得られる。またニッケル膜は基材電極の導電体がはんだに侵食されるのを防止するバリヤ的な役目も有するとされる。   In order to ensure gold wire bonding and solder connection reliability, for example, phosphorous nickel plating and gold plating described in Japanese Patent Laid-Open No. 2003-183843 are applied on the electrode of the conductor formed on the surface of the base material. Japanese Patent Application Laid-Open No. 10-135607 proposes a two-layer nickel and gold plating technique using boron-based nickel plating together. According to these technologies, wettability is ensured by the gold film on the outermost surface at the time of solder joining, and an alloy layer with solder is formed by a nickel film, thereby obtaining good joint strength. The nickel film also has a barrier function to prevent the conductor of the base electrode from being eroded by the solder.

一方、金ワイヤボンディングに関しては例えば金膜厚は0.3μm以上が好ましいとされる(千野ほか:MES2000,11,299(2000):以下文献1とする)。その理由としてワイヤボンディング時の熱処理によりニッケルが金膜中を拡散して最表面に偏析し、ワイヤボンディングの金属間接合を阻害するため、ニッケルの拡散経路を遮断するには金膜の厚膜化が有効としている。そのため最表面へのニッケル偏析防止には0.3μm以上の金膜厚が必要という。またニッケル拡散は表面層の金めっき時に発生したピンホールを介して起こることが示唆されており、ニッケル層と金層の界面腐食による強度低下が示唆されている(渡辺:表面技術,vol53,No1,22(2002):以下文献2とする)。
特開2003-183843号 特開平10-135607号
On the other hand, for gold wire bonding, for example, the gold film thickness is preferably 0.3 μm or more (Chino et al .: MES2000, 11, 299 (2000): hereinafter referred to as Document 1). The reason for this is that nickel diffuses in the gold film due to heat treatment during wire bonding and segregates on the outermost surface, hindering metal-to-metal bonding in wire bonding. Is valid. Therefore, a gold film thickness of 0.3 μm or more is necessary to prevent nickel segregation on the outermost surface. It is also suggested that nickel diffusion occurs through pinholes generated during the gold plating of the surface layer, suggesting a decrease in strength due to interfacial corrosion between the nickel layer and the gold layer (Watanabe: Surface Technology, vol53, No1 , 22 (2002): Reference 2 below).
JP2003-183843 JP-A-10-135607

前記従来技術においては基材電極上にいずれもニッケルめっきおよび金めっきの2層からなる。この構成ではニッケル膜上に密着性の良好な金めっき膜の形成が必須である。そのために置換型金めっき液を用いるのが一般的である。すなわち金めっき液中で被めっき表面のニッケル膜を溶解することで電子を取り出し、その電子を金イオンの還元に利用する。この置換反応によりニッケル膜上に密着性の良好な金膜が析出するが、ニッケルの溶出箇所と金の析出箇所が異なるため置換金めっき膜はピンホールが発生しやすい。そのためピンホールを介してニッケルが表面に偏析しやすく、結果としてワイヤボンディング性が低下するという問題があった。また置換金めっき反応はニッケル表面が金で覆われるにしたがって反応速度が低下し、実用上0.1μm程度しか析出しない。そこで金ワイヤボンディングに必要な0.3μmの金を得るには、さらに自己触媒型金めっき液を用いた2段金めっきが必要であり、コスト高になるという問題があった。また、厚付け金めっきで金膜を0.3μm程度に厚付けし見かけ上ピンホールが消失したとしても、ピンホールが封孔されるまでの金めっき中にニッケル溶出によるニッケル膜と金膜との界面腐食が進行し、はんだ接続信頼性に悪影響を与えるという問題があった。   In the prior art, each of the base electrodes consists of two layers of nickel plating and gold plating. In this configuration, it is essential to form a gold plating film with good adhesion on the nickel film. Therefore, it is common to use a displacement type gold plating solution. That is, electrons are taken out by dissolving a nickel film on the surface to be plated in a gold plating solution, and the electrons are used for reduction of gold ions. By this substitution reaction, a gold film having good adhesion is deposited on the nickel film. However, since the nickel elution site and the gold deposition site are different, the substitution gold plating film tends to generate pinholes. Therefore, there is a problem that nickel is easily segregated on the surface through the pinhole, and as a result, the wire bonding property is lowered. Further, the displacement gold plating reaction decreases as the nickel surface is covered with gold, and only about 0.1 μm is practically deposited. Thus, in order to obtain gold having a thickness of 0.3 μm necessary for gold wire bonding, further, two-step gold plating using an autocatalytic gold plating solution is required, which increases the cost. Also, even if the gold film is thickened to about 0.3 μm by thick gold plating and apparently the pinhole disappears, the nickel film and the gold film due to nickel elution during the gold plating until the pinhole is sealed There was a problem that the interfacial corrosion progressed and adversely affects the solder connection reliability.

本発明はこのような問題点に鑑みなされたものであって、安価にてはんだ接合信頼性と良好な金ワイヤボンディング性を兼ね備えた接合電極およびその製造方法を使用して製造される低コストで信頼性に優れた電子部品を提供することを目的とする。   The present invention has been made in view of such problems, and is manufactured at low cost by using a bonding electrode having both solder bonding reliability and good gold wire bonding property and a method for manufacturing the bonding electrode. An object is to provide an electronic component with excellent reliability.

ニッケル膜上の金膜が置換反応ゆえにピンホールが多数発生する点に着眼し、ニッケル上に置換反応を利用しないで密着性に優れためっき膜を形成する方法を得るべく鋭意研究したところ、ニッケル膜上に還元型パラジウムめっき膜が密着性よく析出し、さらにパラジウムめっき膜上の金は置換型の1段金めっきでも良好な金ワイヤボンディング性が得られるという知見を得た。   Focusing on the fact that the gold film on the nickel film generates many pinholes due to the substitution reaction, and earnestly researched to obtain a method for forming a plating film with excellent adhesion without using the substitution reaction on nickel. It was found that a reduced palladium plating film was deposited on the film with good adhesion, and that gold on the palladium plating film was able to obtain good gold wire bonding even by substitutional single-step gold plating.

本発明は斯かる知見に基づきなされたものであって、本願第一の発明は、セラミック基材と、該セラミック基材に形成した外部接続電極部と、該外部接続電極部の表面上に形成したニッケルあるいはニッケル合金を主体とする金属膜よりなる下地層と、該下地層の表面上に形成したパラジウムあるいはパラジウム合金よりなる中間層と、該中間層の表面上に形成した金あるいは金合金よりなる表面被覆層とを備えてなることを特徴とする外部接合電極付き電子部品である。   The present invention has been made based on such knowledge, and the first invention of the present application is a ceramic base, an external connection electrode formed on the ceramic base, and formed on the surface of the external connection electrode. An underlayer made of a nickel or nickel alloy-based metal film, an intermediate layer made of palladium or a palladium alloy formed on the surface of the underlayer, and a gold or gold alloy formed on the surface of the intermediate layer It is an electronic component with an external joining electrode characterized by including the surface coating layer which becomes.

外部接続電極部は銀あるいは銀合金であることが好ましい。セラミック基板の製造には焼成過程があるが、不活性化雰囲気(窒素等)ではなく大気中で焼成できればコスト的なメリットが大きい。大気中で焼成しても酸化しない金属として銀あるいは銀合金であることが好ましい。   The external connection electrode part is preferably made of silver or a silver alloy. There is a firing process in manufacturing a ceramic substrate, but if it can be fired in the air instead of an inert atmosphere (nitrogen or the like), there is a great cost advantage. Silver or a silver alloy is preferable as the metal that does not oxidize when fired in the air.

下地層の膜厚は2〜15μmであることが好ましい。はんだ接続した場合、下地層が2μmより薄いとはんだと下地層との拡散によりはんだが外部接続電極部まで到達し、電極部のはんだ喰われが発生するので好ましくない。一方15μmより厚い場合、はんだ喰われを防止するには厚すぎて特別な効果がなく無駄になる。   The film thickness of the underlayer is preferably 2 to 15 μm. In the case of solder connection, if the base layer is thinner than 2 μm, the solder reaches the external connection electrode part due to diffusion of the solder and the base layer, and the solder biting of the electrode part occurs, which is not preferable. On the other hand, when it is thicker than 15 μm, it is too thick to prevent solder erosion, which is useless without any special effect.

中間層の膜厚は0.05〜1.0μmであることが好ましい。0.05μmより薄いと表面被覆層の置換金めっき反応で中間層が消失する可能性がある。一方、1.0μmより厚いと特別な効果が得られず無駄となる。   The thickness of the intermediate layer is preferably 0.05 to 1.0 μm. If it is thinner than 0.05 μm, the intermediate layer may disappear due to the displacement gold plating reaction of the surface coating layer. On the other hand, if it is thicker than 1.0 μm, a special effect cannot be obtained and it becomes useless.

表面被覆層の膜厚は0.03〜0.2μmであることが好ましい。はんだ接続した場合、表面被覆層が0.03μmより薄いと十分なはんだ濡れ性が確保できない。一方、0.2μmより厚いとはんだ濡れ性に特別な効果はなく無駄になる。前述の従来技術の膜厚(0.3μm)より薄く限定できるのは、中間層のPdにもはんだ濡れ性が多少あるためである。   The thickness of the surface coating layer is preferably 0.03 to 0.2 μm. When soldered, if the surface coating layer is thinner than 0.03 μm, sufficient solder wettability cannot be ensured. On the other hand, if it is thicker than 0.2 μm, there is no special effect on the solder wettability and it is wasted. The reason why the thickness can be limited to be smaller than the film thickness (0.3 μm) of the above-described prior art is that the intermediate layer Pd also has some solder wettability.

本願第二の発明は、セラミック基材に形成した外部接続電極部の表面上にニッケルあるいはニッケル合金を主体とする金属膜よりなる下地層を形成し、
該下地層の表面上に還元型パラジウムめっきによりパラジウムあるいはパラジウム合金よりなる中間層と形成し、
該中間層の表面上に置換型金めっきにより金あるいは金合金を主体とする表面被覆層を形成することを特徴とする外部接合電極付き電子部品の製造方法である。
還元型めっき液および置換型めっき液は市販されているめっき液を使用することができ、限定されるものではない。また、めっき条件は各市販めっき液の取扱い条件に準じることができる。
The second invention of the present application forms a base layer made of a metal film mainly composed of nickel or a nickel alloy on the surface of the external connection electrode portion formed on the ceramic substrate,
An intermediate layer made of palladium or a palladium alloy is formed on the surface of the underlayer by reduced palladium plating,
A method of manufacturing an electronic component with an external bonding electrode, wherein a surface coating layer mainly composed of gold or a gold alloy is formed on a surface of the intermediate layer by substitutional gold plating.
The reduction type plating solution and the substitution type plating solution can use commercially available plating solutions, and are not limited. The plating conditions can be the same as the handling conditions for each commercially available plating solution.

下地層、中間層および表面被覆層を無電解めっき法により形成することが好ましい。無電解めっき法は化学反応によりめっき析出が進行するので、電気的に孤立した電極部にめっきを付与できるといったメリットがある。一方電解めっき法用いるには電極部に給電するためのめっき引出し配線の形成が必須になり、高密度配線形成に不利になるだけでなく、引出し配線自身がアンテナの役割をするので高周波で使用する場合、ノイズの原因となる。   The underlayer, intermediate layer and surface coating layer are preferably formed by electroless plating. The electroless plating method has a merit that plating can be applied to an electrically isolated electrode portion because plating deposition proceeds by a chemical reaction. On the other hand, in order to use the electrolytic plating method, it is necessary to form a lead-out wiring for supplying power to the electrode part, which is not only disadvantageous for high-density wiring formation, but also because the lead-out wiring itself serves as an antenna, it is used at high frequency If it causes noise.

本発明に係る電子部品の製造方法は、基材表面に接合電極が形成された被めっき物に対し、下地層として無電解ニッケルめっきを施し、続いて中間層として無電解パラジウムめっきを施し、最後に表面層として置換型金めっき皮膜を形成することを特徴としている。無電解ニッケルめっきはリン系またはボロン系の少なくとも1種類を用いることができる。   In the method for manufacturing an electronic component according to the present invention, an electroless nickel plating is applied as a base layer to an object to be plated on which a bonding electrode is formed on the substrate surface, followed by electroless palladium plating as an intermediate layer. It is characterized in that a substitutional gold plating film is formed as a surface layer. The electroless nickel plating can use at least one of phosphorous and boron.

下地層のニッケル膜上に中間層のパラジウムめっきを施すが、パラジウムめっき液は還元型めっき液を用いても密着性に優れている。すなわちニッケルとパラジウムの電位差が約1.24Vと非常に小さいので、パラジウムめっき中にニッケル溶出がほとんど発生しないため、文献2にあるような界面腐食による密着性低下が起こりにくいことを特徴としている。したがってめっき膜中にピンホールが発生しやすい置換型めっきで密着性を確保する必要がなく、ピンホールの少ない還元型パラジウムめっきを施すことができる。これによりニッケルの表面層への拡散を抑制することが可能となった。   An intermediate layer of palladium plating is applied onto the nickel film of the underlayer, and the palladium plating solution is excellent in adhesion even when a reduced plating solution is used. That is, since the potential difference between nickel and palladium is as very small as about 1.24 V, nickel elution hardly occurs during palladium plating. Therefore, there is no need to ensure adhesion by substitutional plating in which pinholes are likely to occur in the plating film, and reduction-type palladium plating with few pinholes can be performed. This made it possible to suppress the diffusion of nickel into the surface layer.

また、金ワイヤを用いた良好なボンディング性を確保するには、接合電極側も同種金属であるほうが金属結合はより強固となる。したがって基材の接合電極最表面は金であることが望ましく、パラジウム膜表面に金めっき膜を形成することを特徴としている。さらに金膜厚は文献1のようにニッケルの拡散を防止する必要がないので金薄膜化が可能となり、低コストな製造方法であることも特徴としている。   Moreover, in order to ensure good bondability using a gold wire, the metal bond becomes stronger when the bonding electrode side is also made of the same metal. Therefore, it is desirable that the outermost surface of the bonding electrode of the base material is gold, and a gold plating film is formed on the surface of the palladium film. Further, since the gold film thickness does not need to prevent nickel diffusion as in Document 1, it is possible to reduce the thickness of the gold film, which is a low-cost manufacturing method.

本発明によれば、基材の表面に形成された導電体の電極形成部上に表面被覆層を備えた電極でかつ前記電極形成部の表面上にニッケルあるいはニッケル合金を主体とする金属膜よりなる下地層が形成され、該下地層の表面上に還元型パラジウムめっきによって形成されるパラジウムあるいはパラジウム合金よりなるピンホールの少ない中間層ならびに該中間層の表面上に置換型金めっきによって形成される金あるいは金合金よりなる界面腐食のない前記表面被覆層を形成することで、金ワイヤボンディング性およびはんだ接合信頼性に優れた電子部品を提供できる。   According to the present invention, there is provided an electrode having a surface coating layer on an electrode forming portion of a conductor formed on the surface of a base material, and a metal film mainly composed of nickel or a nickel alloy on the surface of the electrode forming portion. An intermediate layer made of palladium or palladium alloy formed by reduced palladium plating on the surface of the underlying layer and a substitutional gold plating formed on the surface of the intermediate layer. By forming the surface coating layer made of gold or gold alloy and having no interfacial corrosion, it is possible to provide an electronic component excellent in gold wire bondability and solder joint reliability.

次に、本発明の実施の形態を図面を参照しながら下記に述べる。なお以下、実施例により本発明を詳細に説明するが、それら実施例により本発明が限定されるものではない。   Next, embodiments of the present invention will be described below with reference to the drawings. Hereinafter, the present invention will be described in detail with reference to examples, but the present invention is not limited to these examples.

図1は本発明に係るセラミック電子部品の製造方法により製造される電子部品の一形態を模式的に示した断面図である。同図のパッケージ基板は、セラミック基材1の内層には銀あるいは銀合金からなる内部配線2が形成されており、これと基材の表面に露出して形成された外部接続電極部3と導電接続されるように構成される。そして外部接続電極部3の表面には下地層としてニッケルあるいはニッケル合金皮膜5が被着され、該下地層の表面には中間層としてパラジウムあるいはパラジウム合金皮膜6が被着されている。さらに該中間層の表面には表面被覆層として金皮膜7が被着されている。   FIG. 1 is a cross-sectional view schematically showing one embodiment of an electronic component manufactured by the method for manufacturing a ceramic electronic component according to the present invention. In the package substrate shown in the figure, an internal wiring 2 made of silver or a silver alloy is formed in the inner layer of the ceramic substrate 1, and this is electrically exposed to the external connection electrode portion 3 formed exposed on the surface of the substrate. Configured to be connected. The surface of the external connection electrode portion 3 is coated with nickel or a nickel alloy film 5 as a base layer, and the surface of the base layer is coated with palladium or a palladium alloy film 6 as an intermediate layer. Further, a gold film 7 is applied as a surface coating layer on the surface of the intermediate layer.

次に該電子部品の電極10の製造方法について説明する。まず所定の成形および焼成処理を経て形成された配線2、外部接続電極部3および絶縁層4を含むセラミック基材1を作製した。次に外部接続電極部3の表面に無電解めっき法による皮膜の形成を行なうために、次のめっき前処理を施した。   Next, a method for manufacturing the electrode 10 of the electronic component will be described. First, the ceramic substrate 1 including the wiring 2, the external connection electrode portion 3, and the insulating layer 4 formed through predetermined molding and firing treatment was produced. Next, in order to form a film by the electroless plating method on the surface of the external connection electrode part 3, the following pretreatment for plating was performed.

(前処理)
前記セラミック基材を40℃に加温した脱脂液(商品名:Z-200、ワールドメタル社製)に1分浸漬した。そして3段水洗槽を用いた洗浄後、10%硫酸水溶液に室温で1分浸漬した。そして3段水洗槽で洗浄後銀電極表面の活性化のために、活性化液(商品名:PB-300、荏原ユージライト社製)に室温で1分浸漬した。そして3段水洗槽で洗浄した。
(Preprocessing)
The ceramic substrate was immersed for 1 minute in a degreasing solution (trade name: Z-200, manufactured by World Metal) heated to 40 ° C. Then, after washing using a three-stage washing tank, it was immersed in a 10% sulfuric acid aqueous solution at room temperature for 1 minute. Then, after washing in a three-stage water washing tank, in order to activate the surface of the silver electrode, it was immersed in an activating solution (trade name: PB-300, manufactured by Ebara Eugelite) at room temperature for 1 minute. Then, it was washed in a three-stage water washing tank.

[実施例1]
前記前処理を施したセラミック基材を、無電解ニッケル−リンめっき液(商品名:エニパックLV、荏原ユージライト社製)に90℃で浸漬し、約2μmのニッケル−リン皮膜を形成した。そして3段水洗槽で洗浄後、還元型無電解パラジウムめっき液(商品名:パレットII、小島化学薬品社製)に70℃で浸漬し、約0.05μmのパラジウム皮膜を形成した。直ちに3段水洗槽で洗浄後、置換型無電解金めっき液(商品名:NCゴールドMP、小島化学薬品社製)に75℃で浸漬し、約0.03μmの金皮膜を形成した。ニッケルの金めっき表面層への偏析は認められなかった。また、何れの界面においても界面腐食は認められなかった。そして温風乾燥後金ワイヤボンディング評価およびはんだボールシェア試験をおこなった。金ワイヤボンディング装置は、新川社製(UTC-100)を使用し、27μm金線を用いてステージ温度170℃でボンディングした。またボンディング後の引張り試験機はレスカ社製(PRT-1000)を使用し、引張り速度0.5mm/secで測定した。一方ボールシェア試験は、電極10に対応する位置に共晶はんだボールを搭載後225℃でリフローし接続した。そしてボンドテスタにて破断し、はんだボール破壊部分を実体顕微鏡にて観察して破断モードを確認した。
[Example 1]
The pretreated ceramic base material was immersed in an electroless nickel-phosphorous plating solution (trade name: ENIPAK LV, manufactured by Ebara Eugene Corporation) at 90 ° C. to form a nickel-phosphorous film having a thickness of about 2 μm. Then, after washing in a three-stage water washing tank, it was immersed in a reduced electroless palladium plating solution (trade name: Palette II, manufactured by Kojima Chemical Co., Ltd.) at 70 ° C. to form a palladium film of about 0.05 μm. Immediately after washing in a three-stage water-washing tank, it was immersed in a substitutional electroless gold plating solution (trade name: NC Gold MP, manufactured by Kojima Chemical Co., Ltd.) at 75 ° C. to form a gold film of about 0.03 μm. Segregation of nickel on the gold plating surface layer was not observed. Further, no interfacial corrosion was observed at any interface. After hot air drying, gold wire bonding evaluation and solder ball shear test were performed. As the gold wire bonding apparatus, Shinkawa Co., Ltd. (UTC-100) was used, and bonding was performed at a stage temperature of 170 ° C. using a 27 μm gold wire. In addition, the tensile tester after bonding was made by Resuka (PRT-1000) and measured at a tensile speed of 0.5 mm / sec. On the other hand, in the ball shear test, a eutectic solder ball was mounted at a position corresponding to the electrode 10 and then reflowed and connected at 225 ° C. And it broke with the bond tester, and the fracture mode was confirmed by observing the solder ball fracture part with a stereomicroscope.

[実施例2]
実施例1と同様のセラミック基材1を用いて、実施例1と同様の手順で外部接続電極部3の表面にニッケル−リン皮膜を約8μm、パラジウム皮膜を約1.0μmそして金皮膜を約0.1μm形成した。ニッケルの金めっき表面層への偏析は認められなかった。また、何れの界面においても界面腐食は認められなかった。そして実施例1と同様の手順で金ワイヤボンディング試験およびボールシェア試験を実施した。
[Example 2]
Using the same ceramic substrate 1 as in Example 1, the surface of the external connection electrode portion 3 is approximately 8 μm in nickel-phosphorus film, approximately 1.0 μm in palladium film and approximately 0.1 μm in gold film on the surface of the external connection electrode part 3 in the same procedure as in Example 1. μm was formed. Segregation of nickel on the gold plating surface layer was not observed. Further, no interfacial corrosion was observed at any interface. Then, a gold wire bonding test and a ball shear test were performed in the same procedure as in Example 1.

[実施例3]
実施例1と同様のセラミック基材1を用いて、実施例1と同様の手順で外部接続電極部3の表面にニッケル−リン皮膜を約15μm、パラジウム皮膜を約0.4μmそして金皮膜を約0.2μm形成した。ニッケルの金めっき表面層への偏析は認められなかった。また、何れの界面においても界面腐食は認められなかった。そして実施例1と同様の手順で金ワイヤボンディング試験およびボールシェア試験を実施した。
[Example 3]
Using the same ceramic substrate 1 as in Example 1, the surface of the external connection electrode part 3 was coated with a nickel-phosphorus film of about 15 μm, a palladium film of about 0.4 μm and a gold film of about 0.2 in the same procedure as in Example 1. μm was formed. Segregation of nickel on the gold plating surface layer was not observed. Further, no interfacial corrosion was observed at any interface. Then, a gold wire bonding test and a ball shear test were performed in the same procedure as in Example 1.

[比較例1]
前記前処理を施したセラミック基材1を、無電解ニッケル−リンめっき液(商品名:エニパックLV、荏原ユージライト社製)に90℃で浸漬し、約2μmの皮膜を形成した。そして3段水洗槽で洗浄後、置換型無電解金めっき液(商品名:スーパーメックス#250、エヌ・イー・ケムキャット社製)に70℃で浸漬し、約0.03μmの皮膜を形成した。局部電池反応によるニッケルの金めっき表面層への偏析が認められた。金めっきを行っている間にニッケル溶出によるニッケル膜と金膜との界面腐食が進行した。そして温風乾燥後金ワイヤボンディング評価およびはんだボールシェア試験をおこなった。金ワイヤボンディング装置は、新川社製(UTC-100)を使用し、27μm金線を用いてステージ温度170℃でボンディングした。またボンディング後の引張り試験機はレスカ社製(PRT-1000)を使用し、引張り速度0.5mm/secで測定した。一方ボールシェア試験は、電極10に対応する位置に共晶はんだボールを搭載後225℃でリフローし接続した。そしてボンドテスタにて破断し、はんだボール破壊部分を実体顕微鏡にて観察して破断モードを確認した。
[Comparative Example 1]
The pretreated ceramic base material 1 was immersed in an electroless nickel-phosphorus plating solution (trade name: ENIPAK LV, manufactured by Sugawara Eugleite Co., Ltd.) at 90 ° C. to form a film of about 2 μm. After washing in a three-stage water washing tank, the film was immersed in a substitutional electroless gold plating solution (trade name: Supermex # 250, manufactured by NEM Chemcat) at 70 ° C. to form a film of about 0.03 μm. Segregation of nickel on the gold-plated surface layer due to local battery reaction was observed. During gold plating, interfacial corrosion between nickel film and gold film progressed due to nickel elution. After hot air drying, gold wire bonding evaluation and solder ball shear test were performed. As the gold wire bonding apparatus, Shinkawa Co., Ltd. (UTC-100) was used, and bonding was performed using a 27 μm gold wire at a stage temperature of 170 ° C. In addition, the tensile tester after bonding was made by Reska Co. (PRT-1000) and measured at a tensile speed of 0.5 mm / sec. On the other hand, in the ball share test, a eutectic solder ball was mounted at a position corresponding to the electrode 10 and then reflowed at 225 ° C. for connection. And it fractured | ruptured with the bond tester, and the fracture mode was confirmed by observing the solder ball fracture | rupture part with a stereomicroscope.

[比較例2]
比較例1と同様のセラミック基材1を用いて、実施例1と同様の手順で外部接続電極部3の表面にニッケル−リン皮膜を約8μm形成した。そして3段水洗槽で洗浄後、置換型無電解金めっき液(商品名:スーパーメックス#250、エヌ・イー・ケムキャット社製)に70℃で浸漬し、約0.03μmの皮膜を形成した。続いて3段水洗槽で洗浄後、還元型無電解金めっき液(商品名:スーパーメックス#850、エヌ・イー・ケムキャット社製)に70℃で浸漬し、約0.1μmの皮膜を形成した。局部電池反応によるニッケルの金めっき表面層への偏析が認められた。厚付け金めっきを行っている間にニッケル溶出によるニッケル膜と金膜との界面腐食が進行した。そして実施例1と同様の手順で金ワイヤボンディング試験およびボールシェア試験を実施した。
[Comparative Example 2]
Using the same ceramic substrate 1 as in Comparative Example 1, a nickel-phosphorous film was formed on the surface of the external connection electrode part 3 in the same procedure as in Example 1 by about 8 μm. After washing in a three-stage water washing tank, the film was immersed in a substitutional electroless gold plating solution (trade name: Supermex # 250, manufactured by NEM Chemcat) at 70 ° C. to form a film of about 0.03 μm. Subsequently, after washing in a three-stage water washing tank, it was immersed in a reduced electroless gold plating solution (trade name: Supermex # 850, manufactured by NEM Chemcat) at 70 ° C. to form a film of about 0.1 μm. Segregation of nickel on the gold-plated surface layer due to local battery reaction was observed. During thick gold plating, interfacial corrosion between nickel film and gold film progressed due to nickel elution. Then, a gold wire bonding test and a ball shear test were performed in the same procedure as in Example 1.

[比較例3]
比較例1と同様のセラミック基材を用いて、実施例1と同様の手順で外部接続電極部3の表面にニッケル−リン皮膜を約8μm形成した。そして3段水洗槽で洗浄後、置換型無電解金めっき液(商品名:スーパーメックス#250、エヌ・イー・ケムキャット社製)に70℃で浸漬し、約0.03μmの皮膜を形成した。続いて3段水洗槽で洗浄後、還元型無電解金めっき液(商品名:スーパーメックス#850、エヌ・イー・ケムキャット社製)に70℃で浸漬し、約0.2μmの皮膜を形成した。厚付け金めっきを行っている間にニッケル溶出によるニッケル膜と金膜との界面腐食が進行した。還元型無電解金めっきにより金皮膜をより厚くしたものの0.2μmと不充分な厚さであったためニッケルの拡散経路が完全には遮断されずにニッケルの金めっき表面層への偏析が若干認められた。そして実施例1と同様の手順で金ワイヤボンディング試験およびボールシェア試験を実施した。
[Comparative Example 3]
Using the same ceramic substrate as in Comparative Example 1, a nickel-phosphorous film was formed on the surface of the external connection electrode portion 3 in the same procedure as in Example 1 by about 8 μm. After washing in a three-stage water washing tank, the film was immersed in a substitutional electroless gold plating solution (trade name: Supermex # 250, manufactured by NEM Chemcat) at 70 ° C. to form a film of about 0.03 μm. Subsequently, after washing in a three-stage water washing tank, it was immersed in a reduced electroless gold plating solution (trade name: Supermex # 850, manufactured by NEM Chemcat) at 70 ° C. to form a film of about 0.2 μm. During thick gold plating, interfacial corrosion between nickel film and gold film progressed due to nickel elution. Although the gold film was thickened by reduction-type electroless gold plating, the thickness was insufficient, 0.2 μm, so the nickel diffusion path was not completely blocked and some segregation of nickel on the gold plating surface layer was observed. It was. Then, a gold wire bonding test and a ball shear test were performed in the same procedure as in Example 1.

表1にその測定結果を示す。

Figure 2006196648
Table 1 shows the measurement results.
Figure 2006196648

この表1から明らかなように、表面被覆層の金膜厚が同じでも本発明の外部接続電極部における金ワイヤボンディング強度の方が従来技術よりも優れており、かつはんだ接続性は界面破断を生じることなく信頼性にも優れていることが確認された。比較例ではボンディング性およびはんだ接続信頼性の何れもが実施例より劣ることが確認された。本発明により高コストの原因である還元型無電解金めっきを廃止できることがわった。還元型無電解パラジウムめっきは還元型無電解金めっきに比べて大幅に低コストである。 As is apparent from Table 1, the gold wire bonding strength in the external connection electrode portion of the present invention is superior to that of the prior art even if the gold film thickness of the surface coating layer is the same, and the solder connectivity is interface fracture. It was confirmed that it was excellent in reliability without any occurrence. In the comparative example, it was confirmed that both the bondability and the solder connection reliability were inferior to those of the examples. According to the present invention, it has been found that reduction type electroless gold plating which is a cause of high cost can be eliminated. Reduced electroless palladium plating is significantly less expensive than reduced electroless gold plating.

本発明は電子部品の接合電極およびその製造方法に関し、例えばセラミック材料で形成された基体の表面に接合電極が形成されたセラミック電子部品と、その接合電極製造方法に関する。本発明によれば安価にてはんだ接合信頼性と良好な金ワイヤボンディング性を兼ね備えた接合電極およびその製造方法を使用して製造される低コストで信頼性に優れた電子部品を提供することができる。   The present invention relates to a bonding electrode for an electronic component and a method for manufacturing the same, for example, a ceramic electronic component in which a bonding electrode is formed on the surface of a substrate formed of a ceramic material, and a method for manufacturing the bonding electrode. According to the present invention, it is possible to provide a low cost and highly reliable electronic component manufactured by using a bonding electrode that is inexpensive and has both solder bonding reliability and good gold wire bonding property and a manufacturing method thereof. it can.

本発明の電子部品の断面を模式的に示した図である。It is the figure which showed typically the cross section of the electronic component of this invention.

符号の説明Explanation of symbols

1:セラミック基材
2:内部配線
3:外部接続電極部
4:絶縁層
5:下地層
6:中間層
7:表面被覆層
10:電極
1: Ceramic base material 2: Internal wiring 3: External connection electrode part 4: Insulating layer 5: Underlayer 6: Intermediate layer 7: Surface coating layer 10: Electrode

Claims (7)

セラミック基材と、該セラミック基材に形成した外部接続電極部と、該外部接続電極部の表面上に形成したニッケルあるいはニッケル合金を主体とする金属膜よりなる下地層と、該下地層の表面上に形成したパラジウムあるいはパラジウム合金よりなる中間層と、該中間層の表面上に形成した金あるいは金合金よりなる表面被覆層とを備えてなることを特徴とする外部接合電極付き電子部品。 A ceramic base, an external connection electrode formed on the ceramic base, a base layer made of a metal film mainly composed of nickel or a nickel alloy formed on the surface of the external connection electrode, and a surface of the base layer An electronic component with an external bonding electrode, comprising: an intermediate layer made of palladium or a palladium alloy formed thereon; and a surface coating layer made of gold or a gold alloy formed on the surface of the intermediate layer. 請求項1において、前記外部接続電極部は銀あるいは銀合金であることを特徴とする外部接合電極付き電子部品。 2. The electronic component with an external bonding electrode according to claim 1, wherein the external connection electrode portion is made of silver or a silver alloy. 請求項1において、前記下地層が2〜15μmであることを特徴とする外部接合電極付き電子部品。 2. The electronic component with an external bonding electrode according to claim 1, wherein the underlayer is 2 to 15 [mu] m. 請求項1において、前記中間層が0.05〜1.0μmであることを特徴とする外部接合電極付き電子部品。 2. The electronic component with an external bonding electrode according to claim 1, wherein the intermediate layer is 0.05 to 1.0 [mu] m. 請求項1において、前記表面被覆層が0.03〜0.2μmであることを特徴とする外部接合電極付き電子部品。 2. The electronic component with an external joining electrode according to claim 1, wherein the surface coating layer is 0.03 to 0.2 [mu] m. セラミック基材に形成した外部接続電極部の表面上にニッケルあるいはニッケル合金を主体とする金属膜よりなる下地層を形成し、
該下地層の表面上に還元型パラジウムめっきによりパラジウムあるいはパラジウム合金よりなる中間層と形成し、
該中間層の表面上に置換型金めっきにより金あるいは金合金を主体とする表面被覆層を形成することを特徴とする外部接合電極付き電子部品の製造方法。
On the surface of the external connection electrode part formed on the ceramic substrate, a base layer made of a metal film mainly composed of nickel or a nickel alloy is formed,
An intermediate layer made of palladium or a palladium alloy is formed on the surface of the underlayer by reduced palladium plating,
A method of manufacturing an electronic component with an external bonding electrode, comprising forming a surface coating layer mainly composed of gold or a gold alloy on a surface of the intermediate layer by substitutional gold plating.
請求項6において、前記下地層、前記中間層および前記表面被覆層を無電解めっき法により形成することを特徴とする外部接合電極付き電子部品の製造方法。
7. The method of manufacturing an electronic component with an external bonding electrode according to claim 6, wherein the underlayer, the intermediate layer, and the surface coating layer are formed by an electroless plating method.
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