JP2006173271A - Semiconductor light emitting device, lighting device, portable communication device, and camera - Google Patents

Abstract

A semiconductor light emitting device capable of outputting white light with less color unevenness than conventional ones is provided.
A semiconductor light emitting device includes a semiconductor light emitting device and a phosphor that covers the semiconductor light emitting device. The semiconductor light emitting device has a light emission output higher than that of a first light emission output unit and the first light emission output unit. A distance from the first light emission output portion to the thinnest portion of the phosphor 120 in the direction parallel to the main light emission surface of the semiconductor light emitting device 110, The semiconductor light emitting device 100 is shorter than the distance from the second light emitting output portion of the semiconductor light emitting element 110 to the thinnest portion of the thickness of the phosphor 120.
[Selection] Figure 1

Description

  The present invention relates to a semiconductor light emitting device, a lighting device, a portable communication device, and a camera that output white light.

In recent years, with the improvement of semiconductor technology, semiconductor light-emitting devices that output white light for illumination or the like have been widely used (for example, Patent Documents 1 and 2).
The semiconductor light emitting device includes a semiconductor light emitting element that outputs blue light, and a phosphor in which a fluorescent material that converts blue light into yellow-green light, which is a complementary color, is mixed in a translucent resin, and the semiconductor light emitting element emits light. By simultaneously outputting a part of the blue light transmitted through the translucent resin and the yellow-green light converted by the fluorescent substance at an appropriate ratio, light that appears white is output.
Japanese Patent No. 3257455 JP 2000-208822 A

However, in the conventional semiconductor light emitting device that outputs white light, if the fluorescent material is mixed in the translucent resin substantially uniformly, the portion where the translucent resin is thicker transmits the blue light than the thin portion. Therefore, there is a problem that unevenness of color occurs if the phosphor thickness varies.
Even if there is no variation in the thickness of the phosphor, the light emission output of the semiconductor light emitting element varies. Therefore, the portion where the light emission output is low has a lower ratio of transmitted blue light than the portion where the light emission output is high. There is a problem that uneven color occurs because it looks like a lustrous color.

  An object of the present invention is to provide a semiconductor light emitting device, a lighting device, a portable communication device, and a digital camera that can output white light with less color unevenness than conventional ones.

  In order to achieve the above object, a semiconductor light emitting device according to the present invention includes a semiconductor light emitting element and a phosphor covering the semiconductor light emitting element, and the semiconductor light emitting element includes a first light emitting output unit and the first light emitting unit. A second light emission output portion having a light emission output higher than that of the first light emission output portion, and in the direction parallel to the main light emission surface of the semiconductor light emitting element, the film thickness of the phosphor is maximized from the first light emission output portion. The distance to the thin part is shorter than the distance from the second light emitting output part of the semiconductor light emitting element to the thinnest part of the thickness of the phosphor.

  Therefore, the color characteristics due to the low output and the color characteristics due to the thin phosphor are canceled out, and color unevenness can be suppressed.

With the configuration described in the means for solving the problems, a semiconductor light emitting device that outputs white light with less color unevenness than the conventional one can be provided.
Here, in the semiconductor light emitting device, the first light emission output unit may be a portion where the light emission output of the semiconductor light emitting element is the lowest.
Thereby, a semiconductor light emitting device that outputs white light with less color unevenness can be provided.

Here, in the semiconductor light emitting device, in a plane parallel to the main light emitting surface, the direction from the central portion of the main light emitting surface toward the first light emission output unit and the central portion of the main light emitting surface from the central portion of the phosphor. The direction toward the thinnest part of the film thickness may be the same.
Thereby, white light can be output with good balance.
Here, in the semiconductor light emitting device, the first light emission output portion may be a corner portion of the semiconductor light emitting element.

Thereby, it is easy to bring the first light emission output portion and the thinnest portion close to each other.
Here, in the semiconductor light emitting device, the main light emitting surface may be a quadrangle.
As a result, if the phosphor is rectangular, it is easy to bring the thinnest part of the four sides and the first light emission output part close to each other.

Here, in the semiconductor light emitting device, the light emission output of the first light emission output unit may be 60 to 80% with respect to the light emission output of the second light emission output unit.
As a result, it is possible to suppress color unevenness even under conditions where color unevenness is conspicuous in the prior art, and a particularly remarkable effect is obtained.
Here, in the semiconductor light emitting device, the thinnest part of the phosphor film thickness may be 60 to 80% of the thickest part of the phosphor film thickness.

Thereby, a semiconductor light emitting device that outputs white light with less color unevenness can be provided.
Here, in the semiconductor light-emitting device, the semiconductor light-emitting element may be arranged on the submount.
Thereby, since the positional relationship between the semiconductor light emitting element and the phosphor can be determined on the submount with reference to the submount, the manufacture is facilitated.

Here, in the semiconductor light emitting device, the semiconductor light emitting element may be arranged in a flip chip on the submount.
Thereby, since there is no electrode on the main light emitting surface side, a semiconductor light emitting device that outputs white light with less color unevenness can be provided.
Here, in the semiconductor light emitting device, an electrode and a reflective film having a higher light reflectance than the electrode may be provided on the upper surface of the submount.

Thereby, the light which a semiconductor light-emitting device outputs can be output to the exterior more effectively than the method of giving an electrode a function as a reflective film.
Here, in the semiconductor light emitting device, a submount, a semiconductor light emitting device having a main light emitting surface which is located above the submount, and a rectangular light emitting surface which covers the semiconductor light emitting device and is parallel to the main light emitting surface. And one side of the semiconductor light emitting element is deviated by 45 degrees with respect to one side of the phosphor.

Thereby, since the first light emission output portion is the four corner portions and the thinnest portion is substantially the center of each of the four sides of the phosphor, the first light emission output can be obtained only by shifting the semiconductor light emitting element and the phosphor by 45 °. And the thinnest part can be easily brought close to each other.
Here, the illumination device includes the semiconductor light-emitting device and a lens unit arranged in a main light emission direction of the semiconductor light-emitting device.

As a result, various types of lighting such as ceiling lights and downlights using a plurality of the above semiconductor light emitting devices, desk lamps such as stands, portable lights such as flashlights, photographing lights such as camera strobes, etc. The lighting device can output white light with less color unevenness than in the past.
Here, the mobile communication device includes the semiconductor light emitting device or the lighting device.

  As a result, white light with less color unevenness is output in mobile communication devices such as backlights for LCD screens of mobile communication devices, strobes for still images of digital cameras built in mobile communication devices, and illumination for moving images. can do. Therefore, it can be expected that the color can be output correctly in the backlight of the liquid crystal screen, and the color can be correctly captured in the strobe for still images and the illumination for moving images.

Here, the camera includes the semiconductor light emitting device or the lighting device.
As a result, various cameras such as digital still cameras, strobes for silver-lead cameras, lighting for video cameras, etc. can output white light with less color unevenness than before, so that it is possible to shoot with correct colors. Can be expected.

(Embodiment 1)
<Configuration>
The semiconductor light emitting device according to the first embodiment of the present invention is a first light emitting device having the lowest light output of the semiconductor light emitting device, wherein the semiconductor light emitting device and the phosphor are relatively rotated and arranged on the submount. By making the light emission output unit close to the thinnest part, which is the thinnest part of the phosphor film, white light with less color unevenness than conventional can be output.

  FIG. 1A is a perspective view showing an appearance of the semiconductor light emitting device 100 according to the first embodiment of the present invention. In the first embodiment, the X-axis direction shown in FIG. 1A is the front-rear direction of the semiconductor light emitting device 100 (the + side is the front side and the − side is the rear side), and the Y-axis direction is the left-right direction (the + side is the left side). ,-Side is the right side), and the Z-axis direction is the vertical direction (+ side is the upper side,-side is the lower side). FIG. 1B is a plan view of the semiconductor light emitting device 100 viewed from the upper side (the Z-axis direction + side), that is, the main surface side that mainly outputs light. FIG. 1C is a side view of the semiconductor light emitting device 100 as viewed from the right side (the Y axis direction-side).

As shown in FIG. 1A, the semiconductor light emitting device 100 according to the first embodiment of the present invention is a device that outputs white light, and includes a semiconductor light emitting element 110, a phosphor 120, and a submount 130.
FIG. 2 is a plan view of the semiconductor light emitting device 110 as viewed from the upper side (the Z-axis direction + side), that is, the main surface (hereinafter referred to as “main light emitting surface”) that mainly outputs light.

  In the semiconductor light emitting device 110, for example, a buffer layer made of a thin GaN layer is formed on a sapphire substrate, and an n-type GaN layer, an n-type AlGaN lower cladding layer, a non-doped AlGaInN-based active layer, and a p-type AlGaN upper portion are formed thereon. A light emitting diode that outputs blue light in which a cladding layer and a p-type GaN cap layer are laminated. The semiconductor light emitting device 110 has a rectangular parallelepiped outer shape, the main light emitting surface has a square shape of approximately 0.3 mm square, and a thickness of about 0.1 mm. A negative electrode 111 and a positive electrode 112 are formed on the main light emitting surface of the semiconductor light emitting device 110.

FIG. 3A is a schematic plan view of the semiconductor light emitting device 100, and FIG. 1B is a schematic right side view of the semiconductor light emitting device 100.
As shown in FIG. 3, the semiconductor light emitting device 110 is fixed with a bonding paste 140 at an angle of approximately 45 degrees with respect to the submount 130.
Here, the semiconductor light emitting device 110 includes a first light emission output unit having the lowest light emission output on the main light emission surface, and a second light emission output unit having a light emission output higher than that of the first light emission output unit. When the main light emitting surface has a corner portion, the corner portion is a first light emission output portion.

Here, since the main light emitting surface is a quadrangle, the four corners at the four corners are the first light emission output units. In the case where the main light emitting surface is N-gonal, N corner portions are first light emission output portions. Note that the corner means a vertex portion A1 to A4 in FIG. 3 or a predetermined range portion centered on the vertex portions A1 to A4 (shaded portions in FIGS. 3A and 3B).
The second light emission output unit is the entire part other than the first light emission output part or a part of the part other than the first light emission output part. Here, it is a portion other than the shaded portion in FIGS. 3 (a) and 3 (b).

The phosphor 120 includes a fluorescent material (not shown) that converts the blue light output from the semiconductor light emitting element 110 into a yellow-green light that is a complementary color thereof, the blue light that has not been converted by the fluorescent material, and the fluorescent material. It is made of a resin material that transmits yellow-green light converted by the above.
As shown in FIG. 1, the phosphor 120 is disposed on the submount 130 at an angle of approximately 45 degrees with respect to the semiconductor light emitting device 110 so as to cover the entire semiconductor light emitting device 110 and its periphery. Has been. Note that the phosphor 120 covers the entire semiconductor light emitting element 110, but it does not necessarily have to cover the whole, and it is sufficient that it covers at least a part of the light emitting portion.

The phosphor 120 has a quadrangular frustum-shaped outer shape, the upper surface has a square shape of about 0.52 mm square, the lower surface has a square shape of about 0.56 mm square, and the thickness is about 0.2 mm.
As shown in FIG. 3, the phosphor 120 extends from the first light emission output unit in the direction parallel to the main light emitting surface of the semiconductor light emitting device 110 (the direction parallel to the surface perpendicular to the Z axis). The distance to the thinnest part of the film thickness is arranged to be shorter than the distance from the second light emission output part of the semiconductor light emitting element 110 to the thinnest part of the film thickness of the phosphor 120. .

  Here, the thinnest part is the thinnest part of the phosphor 120. The film thickness of the phosphor 120 is the thickness of the resin material that covers the semiconductor light emitting device 110 and is the distance from the outer surface of the semiconductor light emitting device 110 to the outer surface of the phosphor 120. The thinnest part is a part where the distance from the outer surface of the semiconductor light emitting device 110 to the outer surface of the phosphor 120 on the outer peripheral surface of the phosphor 120 is the shortest.

  As shown in FIG. 3, the distance from the outer surface of the semiconductor light emitting device 110 to the outer surface of the phosphor 120 in the direction parallel to the main light emitting surface of the semiconductor light emitting device 110 is the thinnest because the distance L1 is the shortest. A part is a part shown by B1-B4. The thinnest part is a part where the distance from the light output from the semiconductor light emitting element 110 through the phosphor 120 to the external space is the shortest part, so the ratio of blue light transmitted through other parts is less Many.

  On the other hand, the thickest part of the phosphor 120 is defined as the thickest part of the phosphor 120. The thickest part is the part where the distance from the outer surface of the semiconductor light emitting device 110 to the outer surface of the phosphor 120 is the longest on the outer peripheral surface of the phosphor 120. As shown in FIG. 3, the distance L2 is the longest distance from the outer surface of the semiconductor light emitting device 110 to the outer surface of the phosphor 120 in the direction parallel to the main light emitting surface of the semiconductor light emitting device 110. Therefore, the thickest portion is a corner portion of the phosphor 120 indicated by C1 to C4. The thickest part is the part where the light output from the semiconductor light emitting device 110 passes through the phosphor 120 and reaches the external space is the longest part, and therefore the ratio of blue light transmitted through other parts is higher than the other part. Few.

4A and 4B are schematic plan views showing a semiconductor light emitting device 100 according to a modification. In FIG. 4, devices and members having the same functions as those in the first embodiment are denoted by the same reference numerals as those in the first embodiment.
The thinnest part will be further described with reference to FIGS. 4A and 4B. For example, as shown in FIG. 4A, when the phosphor 120 is rectangular in plan view, the thinnest part is the semiconductor light emitting device 110. These are a portion indicated by B1 having the shortest distance from the vertex portion A1 and a portion indicated by B2 having the shortest distance from the vertex portion A2. As shown in FIG. 4B, when the phosphor 120 has an elliptical shape in plan view, the thinnest part is a part indicated by B1 having the shortest distance from the apex part A1 of the semiconductor light emitting element 110, and This is a portion indicated by B2 that has the shortest distance from the vertex portion A2. The thickest portion is a portion indicated by C1 to C4 in FIG. 4A and a portion indicated by C1 in FIG. 4B.

  In the semiconductor light emitting device 100, the distance from the first light emitting output portion to the thinnest portion of the phosphor 120 is such that the second light emitting output portion of the semiconductor light emitting element 110 has the maximum thickness of the phosphor 120. Since each of the first light emitting output portions is arranged to be shorter than the distance to the thin portion, each first light emitting output portion is closer to any thinnest portion than any other portion on the main light emitting surface. become. Therefore, it is possible to prevent the first light emission output portion, which is the portion with the lowest light emission output on the main light emission surface, from appearing yellowish.

  More specifically, a relatively weak blue light output from each of the first light emission output portions at the four corners of the semiconductor light emitting device 110 is partially at each thinnest portion, which is approximately the center of each side of the phosphor. It is converted into yellowish green light by being converted by the phosphor, but since this portion is thin, the absolute amount to be converted is relatively small. Therefore, it is suppressed that the light output from the semiconductor light emitting device 110 is excessively converted and looks yellowish, and the color unevenness is reduced.

Further, in a plane parallel to the main light emitting surface, the direction from the substantially central portion of the main light emitting surface to the first light emitting output portion, and the thinnest portion of the phosphor film thickness from the central portion of the main light emitting surface. Since the first light emission output part and the thinnest part almost overlap each other, it is possible to output white light in a balanced manner.
A particularly remarkable effect is obtained when the light emission output of the first light emission output unit is 60 to 80% of the light emission output of the second light emission output unit. In addition, a particularly remarkable effect is obtained when the thinnest part of the phosphor 120 has a thickness of 60 to 80% of the thickest part of the phosphor 120.

  Further, for example, the light emission output of the first light emission output unit is 60% of the light emission output of the light emission output unit of the second light emission output unit, and the thinnest part of the phosphor 120 is the thickest part of the phosphor 120. When the thickness is 60%, the color characteristic that looks yellowish due to weak light output and the color characteristic due to the fact that the phosphor 120 is thin are more effectively erased. Color unevenness can be suppressed.

As described above, the main light emitting surface of the semiconductor light emitting device 110 is a quadrangle, and the surface parallel to the main light emitting surface of the phosphor 120 is also a quadrangle. As shown in FIG. 3, each side of the semiconductor light emitting device 110 is shifted by 45 degrees with respect to each side of the phosphor 120. Therefore, the first light emission output part of the main light emission surface can be easily brought close to the thinnest part of the phosphor 120.
Here, the submount and the semiconductor light emitting element are shifted by 45 degrees, but the submount and the phosphor may be shifted by 45 degrees. FIG. 5A is a perspective view showing an appearance of the semiconductor light emitting device 200 in which the submount 210 and the phosphor 220 are shifted by 45 degrees, and FIG. 5B is a plan view of the semiconductor light emitting device 200. FIG. 5C is a side view of the semiconductor light emitting device 200.

When the main light emitting surface of the semiconductor light emitting device is N-gonal and the phosphor is N-gonal in plan view, each side of the semiconductor light emitting device corresponds to each side of the phosphor, and each is shifted by approximately 180 / N °. Will be. Therefore, the first light emitting output portion and the thinnest portion can be easily brought close to each other only by shifting the semiconductor light emitting element and the phosphor by 180 / N °.
FIG. 6A is a plan view of the submount 130 before assembly, as viewed from the upper side (the Z-axis direction + side), that is, from the mounting surface side on which the semiconductor light emitting element 110 is mounted. FIG. 7 is a vertical cross-sectional view taken along line AA ′ of the submount 130 shown in FIG. 6A as viewed from the right side (the Y axis direction-side).

  The submount 130 is disposed under the semiconductor light emitting device 110 and the phosphor 120. The submount 130 has a rectangular parallelepiped outer shape, a main surface having a rectangular shape of approximately 0.6 × 1.0 mm, and a thickness of approximately 0.2 mm. The semiconductor light emitting device 100 according to the first embodiment can be easily manufactured because the positional relationship between the semiconductor light emitting element 110 and the phosphor 120 can be determined on the submount with reference to the submount 130.

For the submount 130, various diodes such as a Zener diode, a pn diode, a pin diode, a Schottky barrier diode, a tunnel diode, and a Gunn diode can be used.
Here, the submount 130 which is a protective diode and the semiconductor light emitting element 110 which is a light emitting diode are connected to each other by electrodes having opposite polarities. Since the protective diode is connected to the light emitting diode in this way, even if an attempt is made to apply a reverse voltage to the light emitting diode, the current flows in the forward direction to the protective diode, so that almost the reverse voltage is applied to the light emitting diode. In addition, even if an excessive forward voltage is applied to the light emitting diode, a forward voltage higher than the reverse breakdown voltage (zener voltage) of the protective diode is not applied.

  When a silicon diode is used as the protective diode, the forward voltage is normally about 0.9V, so the reverse breakdown voltage can be set to about 10V. As a result, the forward breakdown voltage of the GaN-based light emitting diode is about 100 V and the reverse breakdown voltage is about 30 V, so that it is possible to prevent the light emitting diode from being destroyed by an excessive voltage due to static electricity or the like. .

  In particular, light emitting diodes that output blue light are mainly GaN-based, and are less susceptible to static electricity than other bulk compound semiconductors (GaP, GaAlAs, etc.), so the submount 130 is composed of various diodes as described above. The effect is great. However, the submount 130 does not necessarily have to be a diode when other countermeasures against static electricity from the outside are taken or when a semiconductor light emitting element that is resistant to static electricity such as other bulk compound semiconductors is used.

The submount 130 includes a base substrate 134 on which an electrode 131, an electrode 132, and a reflecting portion 133 are arranged on the arrangement surface. The base substrate 134 is an insulating flat plate made of, for example, ceramic or glass epoxy resin, and the main surface on the side where the semiconductor light emitting element 110 and the phosphor 120 are disposed is an arrangement surface.
The electrode 131 is electrically connected to the positive electrode 112 of the semiconductor light emitting element 110 by a bonding wire 141. Similarly, the electrode 132 is electrically connected to the negative electrode 111 of the semiconductor light emitting element 110 by a bonding wire 142. The

  Here, the material of the electrode 131 and the electrode 132 is a metal having characteristics suitable as an electrode such that electromigration hardly occurs. For example, the electrode 131 and the electrode 132 may be made of any one of Au (gold), Pt (platinum), Cu (copper), Ni (nickel), Rh (rhodium), and Al (aluminum), and a plurality of them. Or an alloy containing these. Here, it is assumed to be Au.

  Electromigration is a phenomenon in which a metal component moves across or inside a non-metallic medium due to the influence of an electric field, and the insulation resistance value between electrodes decreases with the passage of time of use, resulting in a short circuit failure. It reaches. Electromigration does not occur if there is no electric field. For example, Ag having a relatively high reflectivity at a light wavelength of 340 nm or more and 800 nm or less is a metal that is particularly susceptible to electromigration, and is inappropriate as an electrode and cannot be used at all.

  The reflection portion 133 is a reflection film that reflects light, and is formed at least on the open portion of the submount 130, and is formed over almost the entire arrangement surface excluding the portions of the electrode 131 and the electrode 132 here. The reflection unit 133 is not in direct contact with any of the electrode 131 and the electrode 132, and has a wavelength converted by the light in the wavelength band output from the semiconductor light emitting device 110 and the fluorescent material in the phosphor 120. High reflectivity for band light.

The material of the reflecting portion 133 is, for example, Ag (silver), an alloy containing Ag (Ag—Bi, Ag—Bi—Nd), Al, or the like depending on the wavelength of light output from the semiconductor light emitting device 110. It is desirable to use an alloy containing Al properly, and it is assumed here to be Ag.
As described above, since the reflecting surface 133 made of a metal such as Ag having a higher reflectance than the electrode is provided on the submount arrangement surface separately from the conventional electrodes such as Au and Al, the metal serves as the electrode. Regardless of whether it is suitable or not, it is possible to efficiently output blue light, ultraviolet light, yellow-green light converted by a fluorescent material, and the like output from the semiconductor light emitting device to the outside.

In addition, since the application of voltage during light emission or the like is small, the reflecting portion 133 is less affected by an electric field, and electromigration is less likely to occur. Therefore, the reflecting portion 133 may have characteristics that are not suitable as an electrode such that electromigration is likely to occur. Absent. Therefore, the material of the reflecting portion 133 may be a metal that easily undergoes electromigration.
In this way, by providing the reflective portion with a material having a high reflectivity so as not to be affected by the electric field separately from the electrode, this can be performed regardless of whether the material having a high reflectivity is likely to undergo electromigration. By using this method, it is possible to efficiently output blue light, ultraviolet light, and yellow-green light converted by a fluorescent material, which are output from the semiconductor light emitting device, to the outside. However, the light output from the semiconductor light emitting element can be output to the outside more effectively.

The material of the bonding wire 141 and the bonding wire 142 is, for example, Au or Al. Here, it is assumed that the material of the bonding wire 141 and the bonding wire 142 is Au.
The operation and action of the semiconductor light emitting device 100 according to the first embodiment will be described.
When a voltage is applied between the electrode 131 and the electrode 132, a current flows in the order of the electrode 131, the bonding wire 141, the positive electrode 112, the negative electrode 111, the bonding wire 142, and the electrode 132, and blue light is output from the semiconductor light emitting device 110. Is done. A part of the output blue light is converted into yellow-green light by the phosphor, and is output together with the blue light not converted by the phosphor, so that the light looks white.

<Manufacturing method>
FIG. 7 is a diagram schematically showing a method for manufacturing the semiconductor light emitting device 100 according to the first embodiment of the present invention.
Hereinafter, a method for manufacturing the semiconductor light emitting device 100 will be described with reference to FIGS.
(1) On the ceramic flat plate, the electrode 131 and the electrode 132 are formed of Au by etching or the like, the reflecting portion 133 is formed of Ag, and the submount 130 is manufactured (step S11).

(2) A wafer of the semiconductor light emitting device 110 is manufactured (step S12).
(3) The submount 130 is fixed at a predetermined position of the die bonding machine (step S13).
(4) The semiconductor light emitting device 110 is fixed at a predetermined position of the die bonding machine so that each side of the submount 130 and each side of the semiconductor light emitting device 110 have a positional relationship of about 45 degrees (step S14).

(5) In the die bonding machine, an appropriate amount of bonding paste 140 is applied to the position to be bonded on each submount 130 by a dispenser or the like (step S15). The bonding paste 140 may be collectively applied by screen printing or the like before being put into the die bonding machine.
(6) The semiconductor light emitting device 110 is die bonded to the bonding position of each submount 130 with a die bonding machine. Here, die bonding is performed so that each side of the submount 130 and each side of the semiconductor light emitting device 110 have a positional relationship of about 45 degrees (step S16).

(7) The submount 130 on which the semiconductor light emitting device 110 is die bonded is transferred from the die bonding machine to the wire bonding machine and fixed at a predetermined position of the wire bonding machine (step S17).
(8) In the wire bonding machine, the bonding wire 142 is generated by wire bonding between the negative electrode 111 and the electrode 132, and similarly, the bonding wire 141 is formed by wire bonding between the positive electrode 112 and the electrode 131. Generate (step S18).

(9) When all wire bonding is completed, this is transferred from the wire bonding machine to the potting printing machine (step S19).
(10) In the potting printing machine, the phosphor 120 is potted and printed at a position to be potted covering the semiconductor light emitting element 110 and its periphery on each submount 130 so as to have a quadrangular pyramid shape. Here, potting printing is performed such that each bottom side of the phosphor 120 does not form an angle with each side of the submount 130 and has a positional relationship of about 45 degrees with each side of the semiconductor light emitting element 110 (step S110).

(11) The semiconductor light emitting device 100 is completed (step S111).
<Summary>
As described above, according to the semiconductor light-emitting device of Embodiment 1 of the present invention, the first light-emitting output unit having a low light-emission output of the semiconductor light-emitting element and the thinnest thin-film portion of the phosphor are brought close to each other. Therefore, the color characteristic due to the low output and the color characteristic due to the thin phosphor are canceled out, and uneven color can be suppressed.

Therefore, the semiconductor light-emitting device of Embodiment 1 of the present invention can output white light with less color unevenness than in the past.
(Embodiment 2)
<Configuration>
While the first embodiment is a face-up type having an electrode on the main light emitting surface side of the semiconductor light emitting element, the second embodiment is a flip chip type having an electrode on the opposite side of the main light emitting surface of the semiconductor light emitting element. The point is different.

Since the flip chip type has no electrode on the main light emitting surface side, it can output white light with less color unevenness than the face-up type.
FIG. 8A is a perspective view showing an appearance of the semiconductor light emitting device 400 according to Embodiment 2 of the present invention, and FIG. 8B is a plan view of the semiconductor light emitting device 400 shown in FIG. FIG. 8C is a longitudinal sectional view taken along line AA ′ of the semiconductor light emitting device 400 shown in FIG. 7B.

FIG. 9 is a bottom view of the semiconductor light emitting device 310 before assembly.
FIG. 10A is a plan view of the submount 410 before assembly, and FIG. 10B is a longitudinal sectional view of the submount 410 shown in FIG.
The directions indicated by the X axis, the Y axis, and the Z axis in FIGS. 8 to 10 conform to the definition of each axis in FIG.

As shown in FIG. 8, the semiconductor light emitting device 400 according to the second embodiment of the present invention is a device that outputs white light, and includes a semiconductor light emitting element 310, a phosphor 320, and a submount 410.
As shown in FIG. 9, the semiconductor light emitting device 310 includes a negative electrode 311 and a positive electrode 312 on one main surface facing the submount 410, and a main light emitting unit that mainly outputs light on the other main surface. There is. The semiconductor light emitting device 310 has a rectangular parallelepiped shape, a main surface shape of a square of 0.3 mm square, a thickness of about 0.1 mm, and is arranged on the submount 410 as shown in FIG. Shall be. The phosphor 320 is disposed on the submount 410 as shown in FIG. 8 so as to cover the entire semiconductor light emitting element 310 and its periphery.

  As shown in FIG. 10, the submount 410 includes a silicon substrate 416 that is a protective diode such as a Zener diode based on silicon, for example, and is disposed under the semiconductor light emitting device 310 and the phosphor 320. A positive electrode 411, a negative electrode 412, a reflecting portion 413, and micro-bumps 420 to 424 are provided on the arrangement surface, which is the main surface of the silicon substrate 416 on the side where the substrate is arranged, and the back surface is provided on the main surface on the back side of the arrangement surface. By providing the electrode 414 and selectively implanting ions into the n-type silicon substrate, the p-type semiconductor region is formed in the adjacent portion of the positive electrode 411 and is shielded by the semiconductor light emitting element 310 when viewed from the arrangement surface side. There is at least a reflection part 413 in the open part which is not performed.

In addition, at least a positive electrode 411 is provided in a portion that is not shielded by the phosphor 320 when viewed from the arrangement surface side of the submount 410, and a part thereof serves as a bonding pad 415. Here, the submount 410 has a rectangular parallelepiped outer shape, a main surface having a rectangular shape of 0.5 × 0.8 mm, and a thickness of about 0.2 mm.
The positive electrode 411 is electrically connected to the negative electrode 311 of the semiconductor light emitting element 310 by the micro bump 420, and similarly, the negative electrode 412 is electrically connected to the positive electrode 312 of the semiconductor light emitting element 310 by the micro bumps 421 to 424. And a voltage is applied between the positive electrode 411 and the negative electrode 412.

The micro bumps 420 to 424 are connection portions, and are conductors that electrically connect the semiconductor light emitting element and the electrodes, respectively.
Here, the positive electrode 411, the negative electrode 412, and the micro bumps 420 to 424 are collectively referred to as an electrode portion. The electrode portion is preferably made of a metal that is less susceptible to electromigration because voltage application during light emission or the like is large and thus the influence of an electric field is large and electromigration easily occurs.

The reflective portion 413 is a reflective film that reflects light, and is not in direct contact with any of the semiconductor light emitting element 110, the positive electrode 411, and the negative electrode 412, and voltage application during light emission is greater than that of the electrode portion. small.
The material of the back electrode 414 is a metal, for example, any one of Au, Pt, Cu, Ni, Rh, Al, Ag, a combination thereof, or an alloy containing these.

<Manufacturing method>
FIG. 11 is a diagram schematically showing a method for manufacturing the semiconductor light emitting device 400 according to the second embodiment of the present invention.
A method for manufacturing the semiconductor light emitting device 400 will be described below with reference to FIG. In addition, the manufacturing method of Embodiment 1 and the step which performs the same operation | work are demonstrated simply.

(1) The wafer of the submount 410 and the semiconductor light emitting element 310 is manufactured, and each is fixed to a predetermined position (steps S11 to S14).
(2) Micro bumps 420 to 424 are generated on the respective submounts 410 at positions where the semiconductor light emitting elements 310 are to be bump-connected (step S21).
(3) The semiconductor light emitting element 310 is bump-connected to the submount 410. Here, bump connection is performed so that each side of the submount 410 and each side of the semiconductor light emitting element 310 have a positional relationship of about 45 degrees (step S22).

(4) The phosphor 320 is potted with a potting printing machine to complete the semiconductor light emitting device 400 (steps S19 to S111).
<Summary>
As described above, according to the semiconductor light-emitting device of the second embodiment of the present invention, as in the first embodiment, the first light-emitting output unit having a low light-emission output of the semiconductor light-emitting element and the phosphor thickness is low. Since the thinnest thin part is brought close to each other, the color characteristic due to low output and the color characteristic due to thin phosphor are canceled out, and color unevenness can be suppressed.

Therefore, the semiconductor light emitting device according to the second embodiment of the present invention can output white light with less color unevenness than in the past.
(Embodiment 3)
<Configuration>
The third embodiment of the present invention is an improvement of the semiconductor light emitting device of the second embodiment, and the shape of the reflecting portion or the like is made with respect to the light emitting direction side rather than the portion closer to the semiconductor light emitting element. The semiconductor light emitting device suppresses uneven luminance and uneven color by efficiently collecting light that is inclined to be higher and attenuates and becomes weaker as the distance from the semiconductor light emitting element increases.

The semiconductor light emitting device 500 according to the third embodiment of the present invention is a device that outputs white light similarly to the semiconductor light emitting device 400 according to the second embodiment, and includes the semiconductor light emitting element 310, the phosphor 320, and the submount 510. The submount 410 is replaced with the submount 510.
12A is a plan view of the submount 510 before assembly, and FIG. 12B shows the semiconductor light emitting device 500 at the position AA ′ of the submount 510 shown in FIG. FIG. 12C is a longitudinal sectional view taken along the line AA ′ in FIG. 12, and FIG. 12C is a cross-sectional view of the semiconductor light emitting device 500 taken along the line BB ′ of the submount 510 shown in FIG. It is a B 'line longitudinal cross-sectional view. Note that the directions indicated by the X axis, the Y axis, and the Z axis in FIG. 12 conform to the definition of each axis in FIG.

  As shown in FIG. 12, the submount 510 according to the third embodiment of the present invention is a silicon substrate that is a protective diode such as a Zener diode based on silicon, for example, similar to the submount 410 according to the second embodiment. 513, arranged below the semiconductor light emitting element 310 and the phosphor 320, and on the arrangement surface which is the main surface of the silicon substrate 513 on the side where these are arranged, a positive electrode 511, a negative electrode 412, and a reflection portion 512 In addition, the micro bumps 420 to 424 are provided, the back surface electrode 414 is provided on the main surface on the back side of the arrangement surface, the positive electrode 411 is replaced with the positive electrode 511, and the reflecting portion 413 is replaced with the reflecting portion 512.

  The positive electrode 511 is different from the positive electrode 411 only in the shape, and is higher in the light emitting direction side than the portion where the portion far from the semiconductor light emitting element is close in the portion covered with the phosphor 320 and not including the semiconductor light emitting device 310. The other features such as the material are the same as those of the positive electrode 411. Here, the portion of the positive electrode 511 that is not covered with the phosphor 320 is not inclined, but this is because the shape of the bonding pad 415 is not changed, and this portion is the portion covered with the phosphor 320. Similarly, it may be inclined.

The reflection part 512 is different from the reflection part 413 only in the shape, and at least in the part covered with the phosphor 320, the part far from the semiconductor light emitting element is inclined so as to be higher with respect to the light emitting direction than the part near the part, Other features such as the material are the same as those of the reflecting portion 413.
<Manufacturing method>
In order to incline the arrangement surface of the submount 510, for example, by applying a positive photoresist on the submount before inclining, exposing it through a gradation mask, developing and rinsing the photoresist, After forming an inclined surface shape pattern on the substrate using a photoresist, anisotropic dry etching or sandblasting is performed on the photoresist and the substrate using this as a mask, and the surface shape pattern of the photoresist is formed on the substrate. Just dig it up on the surface and transfer it.

<Summary>
As described above, according to the third embodiment of the present invention, the shape of the positive electrode and the reflection portion is at least a portion covered with a translucent resin, and a portion far from the semiconductor light emitting element is closer than Since the light is tilted so as to be higher with respect to the light emitting direction side, the light that attenuates and becomes weaker as it is farther from the semiconductor light emitting element can be efficiently collected, and uneven brightness and uneven color can be suppressed.
(Embodiment 4)
<Configuration>
The fourth embodiment of the present invention is an improvement of the semiconductor light emitting device of the second embodiment. By providing irregularities on the surface of the reflecting portion, increasing the surface area, the reflection efficiency is improved, and irregular reflection is performed. Improves wavelength conversion efficiency, and further increases the unevenness of the part far from the semiconductor light emitting element than the uneven part of the near part, so that the light that attenuates and becomes weaker as it gets farther from the semiconductor light emitting element is diffusely reflected in the far part Thus, the semiconductor light-emitting device further suppresses luminance unevenness and color unevenness.

The semiconductor light emitting device 600 according to the fourth embodiment of the present invention is a device that outputs white light in the same manner as the semiconductor light emitting device 400 according to the second embodiment, and includes the semiconductor light emitting element 310, the phosphor 320, and the submount 610. The submount 410 is replaced with a submount 610.
FIG. 13A is a plan view of the submount 610 before assembly, and FIG. 13B shows the position of the semiconductor light emitting device 600 along the line AA ′ of the submount 610 shown in FIG. FIG. 13C is a vertical cross-sectional view taken along the line AA ′ in FIG. 13, and FIG. 13C is a cross-sectional view of the semiconductor light emitting device 600 cut along B-B ′ in the submount 610 shown in FIG. It is a -B 'line longitudinal cross-sectional view. Note that the directions indicated by the X axis, the Y axis, and the Z axis in FIG. 13 conform to the definition of each axis in FIG.

  As shown in FIG. 13, the submount 610 according to the fourth embodiment of the present invention is a silicon substrate that is a protective diode such as a Zener diode based on silicon, for example, similar to the submount 410 according to the second embodiment. 612, disposed below the semiconductor light emitting device 310 and the phosphor 320, and on the arrangement surface which is the main surface of the silicon substrate 612 on which these are arranged, a positive electrode 411, a negative electrode 412, and a reflection portion 611. In addition, the micro bumps 420 to 424 are provided, the back surface electrode 414 is provided on the main surface on the back side of the arrangement surface, and the reflecting portion 413 is replaced with the reflecting portion 611.

The reflection portion 611 is different from the reflection portion 413 only in the shape of the surface, and has an unevenness on the surface, the unevenness in the portion far from the semiconductor light emitting element is larger than the unevenness in the near portion, and other features such as the material are the same as the reflection portion 413. It is the same.
Here, the positive electrode is not provided with unevenness, but may be provided with unevenness as in the case of the reflecting portion 611.

<Manufacturing method>
In order to make the arrangement surface of the submount 610 uneven, for example, by applying a positive photoresist on the submount before making the unevenness, exposing it through a gradation mask, developing and rinsing the photoresist, After forming an uneven surface shape pattern with photoresist on this substrate, using this as a mask, anisotropic dry etching or sand blasting etc. is performed on the photoresist and this substrate, and the photoresist surface shape pattern is formed on this substrate Just dig it up on the surface and transfer it.

<Summary>
As described above, according to the fourth embodiment of the present invention, since the unevenness is provided on the surface of the reflecting portion, the surface area is increased, the reflection efficiency is improved, and the wavelength conversion efficiency is improved by irregular reflection.
Furthermore, since the unevenness of the portion far from the semiconductor light emitting element is made larger than the unevenness of the close portion, uneven brightness and color unevenness are caused by irregularly reflecting light that attenuates and weakens as the distance from the semiconductor light emitting element increases. Can be suppressed.

In order to suppress the color unevenness, it is only necessary to provide unevenness in the reflective portion of the portion that is covered with the translucent resin and does not have the semiconductor light emitting element, and at least reflects the blue light output from the semiconductor light emitting element. do it.
(Embodiment 5)
<Configuration>
The fifth embodiment of the present invention is an improvement of the semiconductor light emitting device of the second embodiment, in which a spherical surface is provided on the surface of the reflecting portion, the reflection efficiency is improved by increasing the surface area, and irregular reflection is performed. Improves the wavelength conversion efficiency, and further increases the curvature of the spherical surface far from the semiconductor light emitting element than the near part, so that the light that attenuates and becomes weaker as the distance from the semiconductor light emitting element becomes more diffusely reflected in the far part Thus, the semiconductor light-emitting device further suppresses luminance unevenness and color unevenness.

The semiconductor light emitting device 700 according to the fifth embodiment of the present invention is a device that outputs white light similarly to the semiconductor light emitting device 400 according to the second embodiment, and includes the semiconductor light emitting element 310, the phosphor 320, and the submount 710. The submount 410 is replaced with a submount 710.
14A is a perspective view of the submount 710 before assembly as viewed from the side of the arrangement surface on which the semiconductor light emitting element 310 is arranged, and FIG. 14B shows the semiconductor light emitting device 700 in FIG. 14A is a longitudinal cross-sectional view taken along the line AA ′ of the submount 710 shown in FIG. 14C. FIG. 14C shows the semiconductor light emitting device 700 in the sub-mount shown in FIG. It is the BB 'line longitudinal cross-sectional view cut | disconnected in the position of BB' of the mount 710. FIG. Note that the directions indicated by the X axis, the Y axis, and the Z axis in FIG. 14 conform to the definition of each axis in FIG.

  As shown in FIG. 14, the submount 710 according to the fifth embodiment of the present invention is a silicon substrate that is a protective diode such as a Zener diode based on silicon, for example, similar to the submount 410 according to the second embodiment. 712, disposed below the semiconductor light emitting element 310 and the phosphor 320, and on the arrangement surface which is the main surface of the silicon substrate 712 on which these are arranged, a positive electrode 411, a negative electrode 412, and a reflection portion 711. In addition, the micro bumps 420 to 424 are provided, the back surface electrode 414 is provided on the main surface on the back side of the arrangement surface, and the reflection portion 413 is replaced with the reflection portion 711.

The reflecting portion 711 is different from the reflecting portion 413 only in the shape of the surface, has a spherical surface, is larger than the portion where the curvature of the spherical surface far from the semiconductor light emitting element is close, and other features such as the material are the same as those of the reflecting portion 413. It is the same.
Here, the positive electrode is not provided with a spherical surface, but may be provided with a spherical surface in the same manner as the reflecting portion 711.

<Manufacturing method>
In order to provide the submount 710 with a spherical surface, for example, a conventional bump forming method may be used.
Further, if a hemispherical shape is provided on the arrangement surface of the submount 710, for example, a positive type photoresist is applied on the submount before the hemispherical shape is provided, exposed through a gradation mask, and the photoresist is applied. After developing and rinsing to form a hemispherical surface shape pattern on the substrate by photoresist, anisotropic dry etching or sand blasting is performed on the photoresist and this substrate using this as a mask, The surface shape pattern of the photoresist may be dug onto the substrate surface and transferred.

<Summary>
As described above, according to the fifth embodiment of the present invention, since the spherical surface is provided on the surface of the reflecting portion, the surface area is increased, the reflection efficiency is improved, and the wavelength conversion efficiency is improved by irregular reflection.
Furthermore, since the curvature of the spherical surface in the part far from the semiconductor light emitting element is made larger than that in the near part, the brightness unevenness and the color unevenness are reflected by irregularly reflecting the light that attenuates and weakens as the distance from the semiconductor light emitting element increases. Can be suppressed.

In order to suppress color unevenness, it is sufficient to provide a spherical surface in the reflection part at least where the semiconductor light emitting element is not covered with the light-transmitting resin, and at least reflects the blue light output from the semiconductor light emitting element. do it.
(Embodiment 6)
Embodiment 6 of the present invention is an illuminating device including the semiconductor light emitting device of the present invention and a lens unit arranged in the main light emitting direction of the semiconductor light emitting device.

Here, description will be made using the semiconductor light emitting device 400 of the second embodiment.
FIG. 15 is a diagram showing a lighting device 800 having the semiconductor light emitting device 400.
In the lighting device 800 shown in FIG. 15, one semiconductor light emitting device 400 is die-bonded on lead frames 801 and 802 using Ag paste 805, and the lead frames 803 and 804 are bonded to the semiconductor light emitting devices 400. A pad 415 is wire-bonded with Au wires 806 and 807, molded with a transparent epoxy resin 808, and then a microlens 809 with a total reflection parabola as a lens portion is attached.

Note that the illumination device using the semiconductor light-emitting device of the present invention as a light source is not limited to the illumination device 800 shown in FIG. 15, and for example, indoor lighting such as a ceiling light and a downlight using many semiconductor light-emitting devices of the present invention. Any lighting device such as a desk lamp such as a stand, a portable lamp such as a flashlight, and a photographing lamp such as a camera strobe may be used.
<Summary>
According to the illumination device of the sixth embodiment of the present invention, the same effect as that of the semiconductor light emitting device of the first to fifth embodiments can be obtained. In particular, it can output white light with less color unevenness than in the past, so it can be expected to promote sales as high-quality lighting for indoor lighting and desk lighting, and correct color in portable lighting. The effect of being able to recognize can be expected.
(Embodiment 7)
Embodiment 7 of the present invention is a portable communication device using the semiconductor light emitting device of the present invention as a light source for illumination.

Here, description is made using the lighting device 800 of Embodiment 6.
FIG. 16 shows a portable communication device 810 that uses the lighting device 800 as a light source for illumination.
Note that the portable communication device in which the semiconductor light emitting device of the present invention is mounted is not limited to the portable communication device 810 shown in FIG. 16. For example, the semiconductor light emitting device of the present invention can be used as a backlight for a liquid crystal screen of a portable communication device. It may be a portable communication device used for any purpose such as a still image strobe of a digital camera built in the communication device or a moving image illumination.

<Summary>
According to the mobile communication device of the seventh embodiment of the present invention, the same effect as that of the semiconductor light emitting device of the first to fifth embodiments can be obtained. In particular, white light with less color unevenness than conventional ones can be emitted, so that colors can be output correctly in the backlight of a liquid crystal screen, and colors can be captured correctly in strobes for still images and lighting for movies. Can be expected.
(Embodiment 8)
Embodiment 8 of the present invention is a camera using the semiconductor light emitting device of the present invention as a light source for photographing.

Here, description is made using the lighting device 800 of Embodiment 6.
FIG. 17 shows a camera 820 that uses the illumination device 800 as a light source for photographing.
Note that the camera equipped with the semiconductor light emitting device of the present invention is not limited to the camera 820 shown in FIG. 17. For example, the semiconductor light emitting device of the present invention is used for a strobe for still images, illumination for moving images, or the like. Any camera such as a digital still camera, a silver-lead camera, and a video camera may be used.

<Summary>
According to the camera of the eighth embodiment of the present invention, the same effects as those of the semiconductor light emitting devices of the first to fifth embodiments can be obtained. In particular, since it is possible to output white light with less color unevenness than in the past, it is possible to expect an effect that colors can be correctly photographed.
The semiconductor light emitting element of the present invention is not limited to an element that outputs blue light, and may be, for example, an element that outputs ultraviolet light. In such a case, the translucent resin is output by the semiconductor light emitting element. Including a fluorescent material that excites blue light, red light, and green light from ultraviolet light, and is made of a resin material that transmits blue light, red light, and green light excited by the fluorescent material. It becomes a phosphor with light properties.

  The present invention can be widely applied to backlights for liquid crystal screens of indoor lighting, desktop lighting, portable lighting, portable communication devices, and the like, and still image strobes and moving image lighting for various cameras. it can.

(A) is a perspective view which shows the external appearance of the semiconductor light-emitting device 100 in Embodiment 1 of this invention. (B) is a plan view of the semiconductor light emitting device 100 shown in (a). (C) is a side view of the semiconductor light emitting device 100 shown in (b). 3 is a plan view of a semiconductor light emitting device 110. FIG. FIG. 2A is a schematic plan view of the semiconductor light emitting device 100. FIG. FIG. 2B is a schematic side view of the semiconductor light emitting device 100. (A) And (b) is a schematic plan view which shows the semiconductor light-emitting device 100 which concerns on a modification, respectively. (A) is a perspective view which shows the external appearance of the semiconductor light-emitting device 200 which rotated the submount and the fluorescent substance 45 degree | times. (B) is a plan view of the semiconductor light emitting device 200 shown in (a). (C) is a side view of the semiconductor light emitting device 200 shown in (b). (A) is a top view of the submount 130 before an assembly. (B) is the longitudinal cross-sectional view of the submount 130 shown to (a) in the A-A 'line. It is a figure which shows the outline of the manufacturing method of the semiconductor light-emitting device 100 in Embodiment 1 of this invention. (A) is a perspective view which shows the external appearance of the semiconductor light-emitting device 400 in Embodiment 2 of this invention. (B) is a plan view of the semiconductor light emitting device 400 shown in (a). (C) is the longitudinal cross-sectional view of the semiconductor light-emitting device 400 shown in (b) at the A-A 'line. It is a bottom view of the semiconductor light emitting device 310 before assembly. (A) is a top view of the submount 410 before an assembly. (B) is the longitudinal cross-sectional view of the submount 410 shown to (a) in the A-A 'line. It is a figure which shows the outline of the manufacturing method of the semiconductor light-emitting device 400 in Embodiment 2 of this invention. (A) is a top view of the submount 510 before an assembly. FIG. 4B is a vertical cross-sectional view taken along line A-A ′ of the semiconductor light emitting device 500 taken along the line A-A ′ of the submount 510 shown in FIG. FIG. 6C is a vertical cross-sectional view taken along line B-B ′ of the semiconductor light emitting device 500 taken along the line B-B ′ of the submount 510 shown in FIG. (A) is a top view of the submount 610 before an assembly. FIG. 6B is a vertical cross-sectional view taken along the line A-A ′ of the semiconductor light emitting device 600 taken along the line A-A ′ of the submount 610 shown in FIG. FIG. 6C is a vertical cross-sectional view taken along line B-B ′ of the semiconductor light emitting device 600 taken along the B-B ′ position of the submount 610 shown in FIG. (A) is a top view of the submount 710 before an assembly. FIG. 7B is a vertical cross-sectional view taken along the line A-A ′ of the semiconductor light emitting device 700 taken along the line A-A ′ of the submount 710 shown in FIG. FIG. 6C is a diagram showing a vertical cross-sectional view taken along the line B-B ′ of the semiconductor light emitting device 700 taken along the B-B ′ position of the submount 710 shown in FIG. It is a figure which shows the illuminating device 800 which has the semiconductor light-emitting device 400. This is a portable communication device 810 using the lighting device 800 as a light source for illumination. This is a camera 820 using the illumination device 800 as a light source for photographing.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Semiconductor light-emitting device 110 Semiconductor light-emitting device 111 Negative electrode 112 Positive electrode 120 Phosphor 130 Submount 131 Electrode 132 Electrode 133 Reflecting part 134 Base substrate 140 Bonding paste 141 Bonding wire 142 Bonding wire 200 Semiconductor light-emitting device 210 Submount 310 Semiconductor light-emitting device 311 Negative electrode 312 Positive electrode 320 Phosphor 400 Semiconductor light emitting device 410 Submount 411 Positive electrode 412 Negative electrode 413 Reflecting portion 414 Back surface electrode 415 Bonding pad 416 Silicon substrate 420 to 424 Micro bump 500 Semiconductor light emitting device 510 Submount 511 Positive electrode 512 Reflector 513 Silicon substrate 600 Semiconductor light emitting device 610 Submount 611 Reflector 612 Silicon substrate 00 semiconductor light-emitting device 710 submount 711 reflecting portion 712 silicon substrate 800 lighting device 801 to 804 lead frame 805 paste 806 and 807 Au wire 808 transparent epoxy resin 809 microlenses 810 mobile communication device 820 camera

Claims (14)

A semiconductor light emitting device, and a phosphor covering the semiconductor light emitting device,
The semiconductor light emitting element includes a first light emission output unit and a second light emission output unit having a light emission output higher than that of the first light emission output unit,
In a direction parallel to the main light emitting surface of the semiconductor light emitting element, the distance from the first light emitting output part to the thinnest part of the phosphor film thickness is from the second light emitting output part of the semiconductor light emitting element. A semiconductor light emitting device that is shorter than the distance to the thinnest part of the phosphor film thickness.   2. The semiconductor light emitting device according to claim 1, wherein the first light emission output portion is a portion where the light emission output of the semiconductor light emitting element is lowest.   In a plane parallel to the main light emitting surface, the direction from the central portion of the main light emitting surface toward the first light emitting output portion and the central portion of the main light emitting surface toward the thinnest portion of the phosphor film thickness. The semiconductor light emitting device according to claim 1, wherein the direction coincides with the direction.   4. The semiconductor light emitting device according to claim 1, wherein the first light emission output portion is a corner portion of a semiconductor light emitting element. 5.   The semiconductor light-emitting device according to claim 1, wherein the main light-emitting surface is a quadrangle.   6. The semiconductor light emitting device according to claim 1, wherein a light emission output of the first light emission output unit is 60% to 80% with respect to a light emission output of the second light emission output unit.   7. The semiconductor light emitting device according to claim 1, wherein the thinnest portion of the phosphor has a thickness of 60 to 80% with respect to the thickest portion of the phosphor. .   The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting element is disposed on a submount.   The semiconductor light emitting device according to claim 8, wherein the semiconductor light emitting element is flip-chip arranged on the submount.   10. The semiconductor light emitting device according to claim 8, wherein an electrode and a reflective film having a higher light reflectivity than the electrode are provided on an upper surface of the submount. A submount,
A semiconductor light emitting element located above the submount and having a main light emitting surface of a square shape;
Covering the semiconductor light emitting element, the surface parallel to the main light emitting surface has a rectangular phosphor,
A semiconductor light emitting device in which one side of the semiconductor light emitting element is shifted by 45 degrees with respect to one side of the phosphor.   12. A lighting device comprising: the semiconductor light emitting device according to claim 1; and a lens unit disposed in a main light emitting direction of the semiconductor light emitting device.   A portable communication device comprising the semiconductor light-emitting device according to claim 1 or the illumination device according to claim 12.   The camera provided with the semiconductor light-emitting device of any one of Claims 1-11, or the illuminating device of Claim 12.

Images