JP2006138679A - Substrate shape detection apparatus, device mounting apparatus using the same, and device mounting method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate shape detection device excellent in substrate shape detection accuracy and a device mounting apparatus using the same.
Light is irradiated toward a substrate 102 from light irradiation means 103 that can irradiate light having a central wavelength in the ultraviolet region. And the light which permeate | transmitted the said board | substrate, the light which reflected the said board | substrate 102, and fluorescence are received by the image detection means 104, The shape of the board | substrate 102 can be recognized with high precision by detecting the shape of the said board | substrate. Moreover, since the device mounting apparatus of this invention can recognize a device with high precision by using the board | substrate shape detection apparatus of the said this invention, it can mount a device with high precision.
[Selection] Figure 1

Description

  The present invention relates to a substrate shape detection apparatus, a device mounting apparatus using the same, and a device mounting method.

  When manufacturing a device or module using a semiconductor chip, it is required to mount them with high accuracy. For example, in a laser unit using a GaAs red LD chip, it is necessary to mount the LD chip on an Si substrate with an accuracy of about 10 μm. In addition, in the case of a compact disk, DVD (Digital Versatile Disk), or HD-DVD that records and reproduces high-definition video, the recording capacity increases dramatically. It is necessary to shorten the wavelength to 650 nm and HD DVD to 400 nm, and mounting with higher accuracy is required.

  In order to mount with high accuracy in this way, it is necessary to recognize the outline of the substrate, chip, etc. with high accuracy. As a method for recognizing a substrate or the like, for example, a method of irradiating a substrate or the like with visible light or infrared light, detecting the end face or side face of the substrate with the transmitted light, and recognizing the shape by image processing Is used. However, such a method has a problem in that the detection accuracy is poor, and in particular, a group III nitride crystal substrate is transparent to visible light and cannot be detected.

In order to solve such a problem, after forming a recognition pattern on a substrate or the like, the shape can be recognized by irradiating the substrate or the like with light that can be transmitted through the substrate and detecting the recognition pattern. (For example, refer to Patent Document 1 and Patent Document 2). However, this method takes time because it is necessary to form a recognition pattern on each substrate, and furthermore, the shape detection accuracy varies depending on the pattern formation accuracy, and an accurate shape can be recognized with high accuracy. It was difficult.
JP-A-9-145965 JP-A-11-346027

  SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate shape detection device that can easily and accurately recognize its shape with high accuracy.

  In order to achieve the above object, a substrate shape detection device according to the present invention is a substrate shape detection device that detects a shape of a substrate by irradiating the substrate with light, and irradiates light toward the substrate. And image detecting means for detecting the shape of the substrate by receiving transmitted light, reflected light or fluorescence from the substrate, and the light is light having a central wavelength in the ultraviolet region. And

  According to the present invention, since the shape of the substrate is detected using light having a central wavelength in the ultraviolet region, for example, it is possible to irradiate light having a wavelength shorter than the absorption edge of the substrate to be detected. The shape can be detected more clearly. As a result, the shape of the substrate can be recognized easily and accurately with high accuracy.

  In the present invention, light having a central wavelength in the ultraviolet region may be light having an energy maximum value at a wavelength in the ultraviolet region, and may include light in the visible light region. The center wavelength may be appropriately selected according to the characteristics of the substrate whose shape is to be recognized (for example, the absorption edge). For example, it is preferably 400 nm or less, more preferably 360 nm, still more preferably 300 nm or less, and the center wavelength is preferably shorter than the absorption edge of the substrate to be detected. The lower limit value of the center wavelength is not particularly limited, but is preferably about 150 nm, for example. For example, when the substrate to be detected is a GaN substrate (absorption edge: 370 nm), the center wavelength is preferably 390 nm or less, and when the substrate is an AlN substrate (absorption edge: 200 nm), the center wavelength is 250 nm or less. Preferably there is. The center wavelength is set to a wavelength having the maximum intensity by evaluating the intensity distribution with respect to the wavelength using, for example, a spectrum analyzer.

  In this invention, it is preferable that the breadth of the wavelength of the light irradiated from the said light irradiation means is 30 nm or less, More preferably, it is 10 nm or less. The spread of the wavelength of the light is a half width when the light intensity spectrum is evaluated. Moreover, in this invention, it is preferable that the wavelength contained in the light irradiated from the said light irradiation means is 150 nm-400 nm, for example. For example, when the center wavelength is 360 nm, the wavelength of light emitted from the light irradiation unit is preferably 345 nm to 375 nm, and more preferably 355 nm to 365 nm.

  In this invention, the intensity | strength of the light irradiated from the said light irradiation means is 1mW-100mW, for example, Preferably it is 5mW-30mW. The intensity of the light can be measured by using, for example, a power meter made of a Si PIN photodiode.

  In the present invention, the light irradiation means may be appropriately determined according to the light to be irradiated, and examples thereof include a light emitting diode, an ultraviolet lamp, a semiconductor laser, a wavelength tunable semiconductor laser, and the like, preferably a light emitting diode. .

  In the present invention, the image detecting means is not particularly limited as long as it can detect transmitted light, reflected light or fluorescence from the substrate. For example, a CCD (Charge Coupled Device) image sensor, CMOS (Complementary Metal-Oxide Semiconductor) A solid-state imaging device such as an image sensor can be used.

  In the present invention, it is preferable that a visible light cut filter is further included. By arranging a visible light cut filter in the optical path such as irradiation light or transmitted light from the substrate, natural light, for example, visible light of 450 nm or more, etc. is blocked, and the contrast of the image obtained by the image detection means is further increased. The shape of the substrate can be detected with higher accuracy. Examples of the arrangement site of the visible light cut filter include the space between the substrate and the image detection means, and the space between the light irradiation means and the substrate, and in particular, the substrate and the image detection means. It is preferable to arrange | position between. The visible light cut filter is preferably arranged in a state where it can be taken in and out with respect to the optical axis.

  In the present invention, the optical system may further include an optical system that magnifies an image obtained by transmitted light, reflected light, or fluorescence from the substrate, or the light irradiation unit. A collimating optical system for collimating the light emitted from the light source. The magnifying optical system is preferably disposed, for example, in front of the image detection unit and between the visible light cut filter or the substrate and the image detection unit. It is preferable to arrange between the light irradiation means and the substrate.

  In the present invention, it is preferable that image processing means for performing image processing on the image detected by the image detection means is further included. Further, by the image processing, for example, by obtaining a detection line indicating the outer shape (end portion) of the substrate from an image detected by the image detection unit, and further by obtaining an intersection of the detection lines, It is more preferable that the vertices can be obtained.

Since the shape detection apparatus of the present invention includes light irradiation means that can irradiate light having a central wavelength in the ultraviolet region, it can detect substrates of any composition with high accuracy. Even a short substrate can be detected with high accuracy. Examples of the substrate include a group III nitride semiconductor substrate, a semiconductor substrate such as a GaO substrate and a ZnO substrate, and a sapphire substrate. Examples of the group III element contained in the group III nitride include Al, In, and Ga. Among these, Al and Ga are preferable. These may include one type or two or more types. Further, the composition of the group III nitride is preferably represented by Al _x Ga _1-x N (where 0 ≦ x ≦ 1). The substrate may be a semiconductor chip in which a device structure is formed on the substrate, or a semiconductor chip in which a device structure is formed on the substrate and divided into chips. Examples of the semiconductor chip include a semiconductor laser, a photodiode, a light emitting diode, and a high frequency device.

  In the present invention, when the substrate is a semiconductor laser having an optical waveguide, the image detected by the image detecting means is applied to the optical waveguide from the image detected by the image detecting means by performing image processing on the image detected by the image detecting means. It is preferable to obtain an end portion perpendicular to the end and an end portion parallel to the optical waveguide. Moreover, it is preferable that the external shape and light emission point of the semiconductor laser can be recognized from these end portions. In this case, for example, it is preferable that light is irradiated from above the semiconductor laser by the light irradiation means.

  Below, the shape detection apparatus of this invention is demonstrated using FIGS. 1-3. In FIG. 1 and FIG. 2, the same portions are denoted by the same reference numerals.

  FIG. 1 shows an example of the configuration of the shape detection apparatus of the present invention. As shown in the figure, this apparatus includes a light irradiation means 103, an image detection means 104, and a base 101, and a substrate 102 can be disposed on the base 101. The shape of the substrate can be detected by irradiating light having a central wavelength in the ultraviolet region from the light irradiation means 103 toward the substrate 102 and receiving the reflected light or fluorescence from the substrate 102 by the image detection means 104. In addition, the arrow in a figure shows the advancing direction of light.

  As an example of the image detecting means, a configuration of a CCD will be described. The CCD is composed of a vertical shift register including a light receiving unit and a storage unit, and a horizontal shift register. Light is detected by a light receiving portion arranged in a matrix on the Si substrate, and electric charges are generated by photoelectric conversion and accumulated in the potential well for a predetermined time. Thereafter, the charge is transferred to the accumulation unit by changing the charge according to the voltage of the potential well. Further, the signal is transferred to the output unit through the horizontal shift register. The light receiving portion can be realized by forming n-type Si on the surface of Si as a substrate, but the efficiency is deteriorated because the crystallinity is poor on the surface. Therefore, a device with high conversion efficiency can be formed by forming thin p-type Si of 100 μm or less on the surface of n-type Si on the surface of the ultraviolet detection CCD and generating photoelectric conversion inside the n-type Si. Further, since the sensitivity is generally low in the ultraviolet region, it is more preferable to form an amplifying part at the output part.

  2A and 2B show other examples of the configuration of the shape detection apparatus of the present invention. As shown in FIG. 2A, the light irradiation means 103 may be disposed below the substrate 102. In this case, light transmitted through the substrate 102, light emission from the substrate 102 by ultraviolet excitation, etc. The shape may be detected by receiving light using the detection means 104. In this case, the emission spectrum varies depending on, for example, a doping material in the semiconductor substrate. For example, in the case of a GaN substrate, strong emission in the vicinity of 362 nm can be obtained by excitation with ultraviolet light of 360 nm or less. it can. Further, as shown in FIG. 2B, it is preferable to arrange a visible light cut filter 105 between the light irradiation unit 103 and the substrate 102 or between the substrate 102 and the image detection unit 104. By arranging the visible light cut filter, it is possible to remove visible light that becomes noise in image detection.

  FIG. 3 shows another example of the configuration of the shape detection apparatus of the present invention. As shown in the figure, this apparatus includes a light irradiation means 203, a beam splitter 206, a base 201, and an image detection means 204. The beam splitter 206 receives light emitted from the light irradiation means 203. It arrange | positions so that reflection in the direction of the base 201 is possible. A substrate 202 can be arranged on the base 201, a lens 207 and a visible light cut filter 205 are arranged between the light irradiation means 203 and the beam splitter 206, and between the beam splitter 206 and the substrate 202. The objective lens 208 is disposed. A visible light cut filter 205 and a lens 209 are disposed between the substrate 202 and the image detection unit 204. The visible light cut filter 205 can be taken in and out with respect to the optical axis. The lens 207 is preferably a lens capable of collimating incident light, and the lens 209 is preferably a lens capable of expanding incident light. By adjusting the focal length between the objective lens 208 and the lens 209, the magnification of the substrate can be changed. For example, a chip such as a semiconductor laser or a light emitting diode has a chip size of, for example, about 100 μm, and can be accurately detected by enlarging the chip.

  The substrate shape detection method using this apparatus is as follows. When light having a central wavelength in the ultraviolet region is irradiated by the light irradiation means 203, the light is collimated by the lens 207, and the collimated light passes through the visible light cut filter, so that the visible light component is removed. Light with less noise. Then, this light is reflected toward the substrate 202 by the beam splitter 206, then condensed by the objective lens 208, and the condensed light is irradiated onto the substrate 202, and is directed from the substrate 202 toward the image detection unit 204. reflect. The reflected light passes through the beam splitter 206 and the visible light cut filter 205, is magnified by the lens 209, and is detected by the image detection means 204. By arranging the visible light cut filter and the lens in this way, the substrate can be detected with extremely high accuracy.

  Next, a device mounting apparatus according to the present invention is a device mounting apparatus for fixing a semiconductor chip on a substrate, the semiconductor chip shape detecting means for detecting the shape of the semiconductor chip, and the semiconductor chip based on the detection result. And the semiconductor chip shape detecting means is the shape detecting device of the present invention.

  Next, the device mounting method of the present invention is a device mounting method for fixing a semiconductor chip on a substrate, wherein (i) a shape detecting step for detecting the shape of the semiconductor chip, (ii) the (i) shape recognition A transfer step of transferring the semiconductor chip to a fixed position on the substrate based on the detection result obtained in the step; and (iii) a fixing step of fixing the semiconductor chip to the fixed position, In the shape recognition step, the shape detection device of the present invention is used.

  When the semiconductor chip is a semiconductor laser, it is preferable that an end perpendicular to the optical waveguide and an end parallel to the optical waveguide are detected in the shape recognition step (i). Furthermore, it is preferable to obtain a detection line from the detected end and obtain an intersection or a light emission point of the detection line. By obtaining intersections and light emitting points in this way and using them for alignment, a semiconductor laser can be mounted with higher accuracy. In this case, it is preferable that light is irradiated from above the semiconductor laser by the light irradiation means.

  Hereinafter, a device mounting apparatus and a device mounting method according to the present invention will be described with reference to FIGS. 4, the same parts as those in FIG. 3 are denoted by the same reference numerals, and in FIG. 5, the same parts as those in FIG. 4 are denoted by the same reference numerals.

  FIG. 4 shows an example of the mounting apparatus of the present invention. As shown in the figure, this apparatus includes a semiconductor chip shape detection unit, a semiconductor chip transfer unit, and a heat stage 421, and a substrate or the like can be arranged on the heat stage 421. The semiconductor chip shape detection means includes a light irradiation means 203, a beam splitter 206, and an image detection means 204. A lens 207 is arranged between the light irradiation means 203 and the beam splitter 206, and the beam splitter 206 and the detection target. An objective lens 208 is disposed between the two and the visible light cut filter 205 and the lens 209 are disposed between the detection target and the image detection unit 204. The semiconductor chip transfer means includes a fine movement stage 411 and a vacuum chuck 412, and the position can be adjusted by sucking an LD chip to be mounted by the vacuum chuck 412 and transferring the vacuum chuck 412 by the fine movement stage 411.

  A method for mounting an LD chip on a Si substrate using the apparatus of FIG. 4 will be described as an example.

  First, the package 433 is disposed on the heat stage 421, and the Si substrate 432 is disposed at a predetermined storage position of the package 402. A recess is formed in the center of the Si substrate 432, and an LD chip may be disposed in the recess. Further, the Si substrate may have, for example, a PD element and a control circuit.

  Next, the external shape of the LD chip 431 and the Si substrate 432 are recognized by the semiconductor chip shape detection means, and the LD chip 431 is fixed to the Si substrate 432. An example of the shape detection method will be specifically described below with reference to FIGS. 5 (a) and 5 (b). FIG. 5A is a top view of the LD chip, and FIG. 5B is an image processing screen of the outer shape of the LD chip.

  As shown in FIG. 5A, an electrode 441 is formed on the upper surface of the LD chip 431, which is the central portion in the width direction (Y-axis direction) of the LD chip 431 and is in the longitudinal direction (x-axis direction). ), A waveguide 442 through which the laser propagates is formed. And 443 becomes a light emission point.

(1) Chip end face detection First, the chip end face on the light emitting point 443 side is detected by image processing. The light irradiation means 203 irradiates the LD chip 431 with light having a central wavelength in the ultraviolet region. Then, the reflected light from the LD chip 431 is detected by the image detection means 204, and the detected image is processed by an image processing device (not shown). Thereby, the detection line C is obtained as shown in FIG. According to the present invention, since a light irradiating means capable of irradiating light having a central wavelength in the ultraviolet region is used, an image with a large contrast can be obtained even with a transparent GaN substrate, particularly in the visible light region, The detection line C can be obtained with higher accuracy.

(2) Waveguide position detection Next, in the same manner as the detection line C, detection lines A, B and D are obtained. As described above, since the waveguide 442 is located at the center in the width direction of the LD chip 431, the accurate position of the waveguide 442 can be obtained by obtaining the detection lines A and B. Furthermore, the exact position of the light emitting point 443 located at the intersection of the waveguide 442 and the detection line C can be obtained. In addition, although the case where the waveguide 442 is located at the center portion in the width direction of the chip has been described as an example, according to the method of the present invention, even when the waveguide is not located at the center portion, From the distance of the waveguide from the chip end face when the waveguide is formed, the exact position of the light emitting point can be obtained. Further, by detecting the detection lines A, B, C, and D, each vertex of the chip can be accurately detected from the intersections thereof, so that the shape of the chip can be recognized with higher accuracy.

  After recognizing the shape of the LD chip 431 as described above, the position of the LD chip 431 is adjusted using the fine movement stage 411 and the vacuum chuck 412, and the LD chip 431 is fixed on the Si substrate 432. For example, a solder material can be used for fixing the LD chip 431. In this case, the Si substrate 432 is heated, the solder material is melted, the LD chip 431 and the Si substrate 432 are welded, and cooled and fixed. The position adjustment of the light emitting point 443 in the thickness direction can be performed, for example, by adjusting the pressure of the chip and the temperature of the Si substrate.

  Thus, according to the present invention, the LD chip can be mounted on the Si substrate in the x and y axis directions with an accuracy of, for example, ± 5 μm.

  Next, an example of the configuration of a laser unit that can be mounted by the mounting apparatus of the present invention will be described with reference to FIG. As shown in the figure, the laser unit includes a Si substrate 803 and a resin lead frame package 804. The Si substrate 803 is reflected by the optical system that focuses the irradiated laser light on the recording medium and the recording medium. A photo IC 802 and a semiconductor laser 801 having a photodetector for detecting the emitted laser light are arranged. The semiconductor laser 801 is disposed in a recess formed in the center of the Si substrate 803, and one side surface of the recess is inclined and functions as a micromirror. For example, when the main surface of the Si substrate 803 is a plane orientation (100) plane, it can be used as a micromirror by exposing the (111) plane by anisotropic etching. Such an integrated laser unit is widely used because the optical disk apparatus can be miniaturized by integrating the semiconductor laser and the photodetector in this way.

  An example of an optical pickup method using the laser unit having such a configuration will be described with reference to FIG. As shown in the figure, the laser light emitted from the semiconductor laser 801 is reflected by the micromirror and travels in a direction substantially perpendicular to the main surface. The laser light that has passed through the glass cap 806 is separated into three beams by a grating formed on the polarization hologram element 807 (only one beam is shown in the figure for simplicity). Thereafter, the light passes through a quarter-wave plate (not shown) and the objective lens 808 and is collected on the optical disk 809. The laser light reflected from the optical disk 809 passes through the objective lens 808 and the quarter-wave plate, and is then diffracted by the grating formed on the upper surface of the hologram element 807. The diffracted light is an information signal, a focus error signal, Used as tracking error signal.

  According to the device mounting apparatus of the present invention, even such a laser unit can mount an LD chip with high accuracy. For example, when a red laser for DVD is used as the LD chip, the resonator direction (x-axis direction) is ± 10 μm or less, the direction perpendicular to it (y-axis direction) is ± 20 μm or less, and the vertical direction that is the thickness direction is ± 1. Can be mounted with accuracy of 5 μm or less. In addition, it can be mounted with the required accuracy even in a high-density optical disk using a blue-violet LD, for which higher accuracy is required.

  Hereinafter, the present invention will be described in more detail with reference to examples.

A shape detection apparatus having the configuration shown in FIG. 3 was produced. As the light irradiation means 203, an ultraviolet light emitting diode shown in FIG. 7 was used. As shown in the figure, the ultraviolet light-emitting diode has a GaN substrate 301 with an a-type n-type GaN contact layer 302, an n-type Al _0.15 Ga _0.85 N barrier layer 303, and a GaN / Al _0.12 Ga _0.88 N multiple layer. A quantum well 304, a p-type Al _0.15 Ga _0.85 N blocking layer 305, and a p-type GaN contact layer 306 are formed, and electrodes 307 and 308 are formed on the contact layers 301 and 306, respectively. The ultraviolet light emitting diode can obtain a light emission spectrum having a center wavelength of 363 nm and a wavelength spread of about 30 nm by injecting a current. Further, light having a shorter wavelength can be generated by increasing the amount of Al in the multiple quantum well 304.

(Example 1-1)
A GaN substrate was detected by irradiating light having a central wavelength of around 360 nm and detecting the reflected light using the shape detection apparatus having the above-described configuration. The result is shown in FIG. In the figure, the portion indicated by A corresponds to the substrate portion (the same applies to FIGS. 8B and 8C).

(Example 1-2)
Detecting the GaN substrate by irradiating light with a central wavelength of around 360 nm, removing the visible light cut filter, and detecting light emission (photoluminescence) from the GaN substrate using the shape detection device having the above-described configuration. went. The result is shown in FIG.

(Comparative Example 1)
The GaN substrate was detected using a shape detection device using a normal visible light lamp as a light irradiation means. The result is shown in FIG.

  As shown in Fig. 8 (a), a light-emitting diode with a center wavelength of around 360 nm is used, and noise is removed by a visible light cut filter, so a large contrast can be obtained and the shape can be recognized with high accuracy. It was. Also, even when the visible light cut filter is removed and light emission from the substrate is detected, as shown in FIG. 8 (b), a sufficiently image-detectable contrast is obtained and the shape is recognized with higher accuracy. We were able to. On the other hand, in Comparative Example 1 using visible light, the contrast was small as shown in FIG. 8C, and it was difficult to recognize the shape. According to the shape detection apparatus of the present invention, the shape can be recognized with high accuracy by using the light having the center wavelength in the ultraviolet region as the irradiation means.

  Next, the shape of the ZnO substrate (band gap 3.4 eV (absorption edge 365 nm)) was recognized using a light emitting diode having a center wavelength of around 360 nm using the shape detection device used in Example 1-1. . As a result, an image having a large contrast could be obtained.

(Comparative Example 2)
Further, as a result of detecting a similar ZnO substrate using a shape detection device using a normal visible light lamp as a light irradiation means, the contrast was small and it was difficult to recognize the shape.

  According to the shape detection apparatus of the present invention, the shape can be recognized with high accuracy by using the light having the center wavelength in the ultraviolet region as the irradiation means.

  Instead of the light emitting diode of the shape detection device used in Example 1-1, an ultraviolet lamp having a center wavelength of 300 nm or less (product name: Spot UV irradiation device SP-7; manufactured by Ushio Inc.) is used as the light irradiation means. The shape of the GaO substrate (band gap 4.8 eV (absorption edge 258 nm)) was recognized. As a result, an image having a large contrast could be obtained.

(Comparative Example 3)
Further, as a result of detecting a similar GaO substrate using a shape detection device using a normal visible light lamp as a light irradiation means, the contrast was small and it was difficult to recognize the shape.

  According to the shape detection apparatus of the present invention, the shape can be recognized with high accuracy by using the light having the center wavelength in the ultraviolet region as the irradiation means.

  According to the present invention, the shape can be recognized with high accuracy, so that accurate conveyance and mounting can be provided. For example, it can be used for mounting a laser unit or an optical pickup device, and its practical effect is great.

FIG. 1 is a block diagram showing an example of the configuration of the shape detection apparatus of the present invention. 2A and 2B are configuration diagrams showing another example of the configuration of the shape detection apparatus of the present invention. FIG. 3 is a block diagram showing another example of the configuration of the shape detection apparatus of the present invention. FIG. 4 is a configuration diagram showing an example of the configuration of the mounting apparatus of the present invention. FIG. 5A is a configuration diagram showing an example of the configuration of the LD chip, and FIG. 5B is a configuration diagram showing an example of image processing using the shape detection apparatus of the present invention. FIG. 6A is a configuration diagram illustrating an example of the configuration of the laser unit, and FIG. 6B is a configuration diagram illustrating an example of an optical pickup method. FIG. 7 is a cross-sectional view showing an example of the configuration of the ultraviolet light emitting diode. 8A and 8B are detection image photographs in the example of the present invention, and FIG. 8C is a detection image photograph in the comparative example.

Explanation of symbols

101, 201 Base 102, 202 Substrate 103, 203 Light irradiation means 104, 204 Image detection means 105, 205 Visible light cut filter 206 Beam splitter 207, 208, 209 Lens 301 GaN substrate 302, 306 Contact layer 303 Barrier layer 304 Multiplexing Quantum well 307, 308 Electrode 411 Fine movement stage 412 Vacuum chuck 421 Heat stage 432, 803 Si substrate 433, 804 Package 441 Electrode 442 Waveguide 443 Light emitting point 801 Semiconductor laser 802 Photo IC
806 Glass cap 807 Polarization hologram 808 Lens

Claims (19)

A substrate shape detection device that detects the shape of a substrate by irradiating light,
Light irradiation means for irradiating light toward the substrate, and image detection means for detecting the shape of the substrate by receiving transmitted light, reflected light or fluorescence from the substrate,
The apparatus is characterized in that the light is light having a central wavelength in the ultraviolet region.   The detection device according to claim 1, wherein the substrate is a semiconductor substrate.   The detection device according to claim 1, wherein the substrate is at least one selected from the group consisting of a group III element nitride semiconductor substrate, a GaO substrate, a ZnO substrate, and a sapphire substrate.   The detection apparatus according to claim 1, wherein the substrate is a semiconductor chip having a device structure on the substrate.   The detection apparatus according to claim 1, wherein the center wavelength is 400 nm or less.   The detection apparatus according to claim 1, wherein the center wavelength is 360 nm or less.   The detection apparatus according to claim 1, wherein the center wavelength is 300 nm or less.   The detection device according to claim 1, wherein the light irradiation means is a light emitting diode or an ultraviolet lamp.   The detection apparatus according to claim 1, further comprising a visible light cut filter, wherein the visible light cut filter is disposed between the substrate and the image detection unit.   Furthermore, the optical system for enlarging the image obtained by the transmitted light from the said board | substrate, reflected light, or fluorescence, The said optical system is arrange | positioned between the said visible light cut filter and the said image detection means. Item 10. The detection device according to Item 9.   The detection apparatus according to claim 1, wherein the image detection means is a CCD image sensor or a CMOS image sensor.   The detection apparatus according to claim 1, further comprising image processing means for performing image processing on the image detected by the image detection means.   The detection device according to claim 12, wherein a detection line indicating an end portion of the substrate is obtained from the detected image by the image processing.   The detection device according to claim 13, further comprising obtaining an intersection of the detection lines by the image processing.   The substrate is a semiconductor laser provided with an optical waveguide, and image processing is performed on the image detected by the image detection means, so that the substrate is perpendicular to the optical waveguide from the image detected by the image detection means. The detection device according to claim 12, wherein an end portion and an end portion parallel to the optical waveguide are obtained. A device mounting apparatus for fixing a semiconductor chip on a substrate,
A semiconductor chip shape detecting means for detecting the shape of the semiconductor chip; and the semiconductor chip conveying means for moving the semiconductor chip to a target position based on the detection result;
16. A device mounting apparatus, wherein the semiconductor chip shape detecting means is the shape detecting apparatus according to claim 1. A device mounting method for fixing a semiconductor chip on a substrate,
(I) a shape detection step for detecting the shape of the semiconductor chip;
(Ii) a transporting step of transporting the semiconductor chip to a fixed position on the substrate based on a detection result obtained in the (i) shape recognition step; and (iii) a fixing for fixing the semiconductor chip to the fixing position. Including steps,
The mounting method characterized by using the shape detection apparatus in any one of Claim 1 to 14 in the said shape recognition process of said (i). The semiconductor chip is a semiconductor laser,
The mounting method according to claim 17, wherein in the shape recognition step (i), an end perpendicular to the optical waveguide and an end parallel to the optical waveguide are detected.   The mounting method according to claim 18, wherein a detection line is obtained from the detected end portion, and an intersection of the detection lines is obtained.

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