JP2006120981A - Electronic component and its manufacturing method - Google Patents
Electronic component and its manufacturing method Download PDFInfo
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- JP2006120981A JP2006120981A JP2004309444A JP2004309444A JP2006120981A JP 2006120981 A JP2006120981 A JP 2006120981A JP 2004309444 A JP2004309444 A JP 2004309444A JP 2004309444 A JP2004309444 A JP 2004309444A JP 2006120981 A JP2006120981 A JP 2006120981A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 141
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000003566 sealing material Substances 0.000 claims description 69
- 238000005498 polishing Methods 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 9
- 238000010897 surface acoustic wave method Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
本発明は、電子素子が筐体に設けられる電子部品及びその製造方法に係り、特に、放熱性に優れた電子部品及びその製造方法に関する。 The present invention relates to an electronic component in which an electronic element is provided in a housing and a manufacturing method thereof, and more particularly to an electronic component having excellent heat dissipation and a manufacturing method thereof.
図７は従来の電子部品の構造を示す断面図である。
電子部品１０１は、圧電性基板１０５の表面１０５ａに、たとえばくし歯状電極（ＩＤＴ（インタディジタルトランスデューサ）電極）を設けた弾性表面波素子（電子素子）１０４を筐体１０２の内部に収納したものである。
FIG. 7 is a cross-sectional view showing the structure of a conventional electronic component.
An electronic component 101 includes a surface 102 a of a piezoelectric substrate 105 in which a surface acoustic wave element (electronic element) 104 provided with, for example, comb-like electrodes (IDT (interdigital transducer) electrodes) is housed in a housing 102. It is.
電子素子１０４は、筐体１０２に形成された収納部１０３に収納され、蓋体１０９によって密封されている。 The electronic element 104 is housed in a housing portion 103 formed in the housing 102 and sealed by a lid 109.
筐体１０２には導通部１０６，１０６および素子接続部１０８，１０８が設けられ、筐体１０２の底面には接続端部１０７，１０７が設けられている。電子素子１０４には接続ワイヤ１００，１００が設けられており、電子素子１０４は、接続ワイヤ１００，１００、素子接続部１０８，１０８および導通部１０６，１０６を介して接続端部１０７，１０７と電気的に接続されている。 The casing 102 is provided with conduction portions 106 and 106 and element connection portions 108 and 108, and connection end portions 107 and 107 are provided on the bottom surface of the casing 102. The electronic element 104 is provided with connection wires 100 and 100, and the electronic element 104 is electrically connected to the connection end portions 107 and 107 via the connection wires 100 and 100, the element connection portions 108 and 108, and the conduction portions 106 and 106. Connected.
下記特許文献１には弾性表面波フィルタが開示されている。
図８は前記弾性表面波フィルタを示す断面図である。
The following Patent Document 1 discloses a surface acoustic wave filter.
FIG. 8 is a cross-sectional view showing the surface acoustic wave filter.
弾性表面波フィルタ２００では、図示Ｚ２側の表面に電極パターンが形成された圧電基板２０１が、導電性樹脂２０２を介して、金属製の蓋２０３によってパッケージ２０４内に封入されている。
しかし、図７に示す従来の構造では、電子部品１０１の使用時に電子素子１０４から発生するジュール熱は、主に筐体１０２の底面に設けられた金属層１１０およびスルーホール１１１を介して放熱される。このため、放熱は間接的なものとなり、放熱効果は十分ではない。 However, in the conventional structure shown in FIG. 7, Joule heat generated from the electronic element 104 when the electronic component 101 is used is dissipated mainly through the metal layer 110 and the through hole 111 provided on the bottom surface of the housing 102. The For this reason, heat radiation becomes indirect and the heat radiation effect is not sufficient.
また、前記特許文献１に記載の発明では、前記電極パターンおよび圧電基板２０１で発生したジュール熱は蓋２０３から放熱されるが、ジュール熱の蓋２０３に至る経路において、導電性樹脂２０２が介在する。このため、放熱効果は十分ではない。 In the invention described in Patent Document 1, Joule heat generated in the electrode pattern and the piezoelectric substrate 201 is radiated from the lid 203, but the conductive resin 202 is interposed in the path to the Joule heat lid 203. . For this reason, the heat dissipation effect is not sufficient.
本発明は上記従来の課題を解決するものであり、放熱性に優れた電子部品及びその製造方法を提供することを目的としている。 The present invention solves the above-described conventional problems, and an object thereof is to provide an electronic component excellent in heat dissipation and a method for manufacturing the same.
本発明の電子部品は、基部と、側壁部と、前記基部と前記側壁部とによって囲まれた凹形の収納部とを有する筐体において、電子素子の基板の表面が前記収納部の底面と対向するように、前記電子素子が前記収納部内に収納されて、前記基板の裏面が上側に位置し、前記基板の裏面上には金属突起が設けられていることを特徴とする。 The electronic component of the present invention is a housing having a base, a side wall, and a concave storage part surrounded by the base and the side wall, wherein the surface of the substrate of the electronic element is the bottom of the storage part. The electronic elements are housed in the housing portion so as to face each other, the back surface of the substrate is positioned on the upper side, and metal protrusions are provided on the back surface of the substrate.
本発明では、電子素子の基板の裏面上に金属突起が設けられている。このため、電子素子からその動作中に発生するジュール熱を外部に効率よく放熱することができる。 In the present invention, the metal protrusion is provided on the back surface of the substrate of the electronic element. For this reason, Joule heat generated during the operation from the electronic element can be efficiently radiated to the outside.
また本発明では、少なくとも前記側壁部と前記基板との間が封止材によって封止されることが好ましい。 In the present invention, it is preferable that at least a space between the side wall portion and the substrate is sealed with a sealing material.
このようにすると、収納部が封止材により密封され、収納部内に収納された電子素子が、収納部内に密封された状態で封止される。このため、外気に含まれる水分等によって、電子素子の機能が劣化することを防止することができる。 If it does in this way, a storage part will be sealed with a sealing material and the electronic device stored in the storage part will be sealed in the state sealed in the storage part. For this reason, it can prevent that the function of an electronic element deteriorates with the water | moisture content etc. which are contained in external air.
または、本発明の電子部品は、電子素子の基板の表面が筐体の上面と対向するように、前記電子素子が前記筐体上に設置されて、前記基板の裏面が上側に位置し、前記基板の裏面上には金属突起が設けられていることを特徴とする。 Alternatively, in the electronic component of the present invention, the electronic element is installed on the casing so that the surface of the substrate of the electronic element faces the upper surface of the casing, and the back surface of the substrate is positioned on the upper side. A metal protrusion is provided on the back surface of the substrate.
上記のような構造とした場合においても、電子素子の基板の裏面上に金属突起が設けられているため、電子素子からその動作中に発生するジュール熱を外部に効率よく放熱することができる。 Even in the case of the above structure, since the metal protrusion is provided on the back surface of the substrate of the electronic element, Joule heat generated during the operation from the electronic element can be efficiently radiated to the outside.
上記においては、少なくとも前記筐体と前記基板との間が封止材によって封止されることが好ましい。 In the above, it is preferable that at least the space between the housing and the substrate is sealed with a sealing material.
このようにした場合においても、電子素子の機能が外気に含まれる水分等によって劣化することを防止することができる。 Even in this case, it is possible to prevent the function of the electronic element from being deteriorated by moisture or the like contained in the outside air.
本発明では、前記封止材が、前記基板の裏面上のうち前記金属突起が設けられていない部分にも設けられており、前記金属突起の上面と前記基板の裏面上に設けられる前記封止材の上面とが同一平面上にあり、前記金属突起の上面が露出していることが好ましい。 In the present invention, the sealing material is also provided on a portion of the back surface of the substrate where the metal protrusion is not provided, and the sealing material is provided on the top surface of the metal protrusion and the back surface of the substrate. It is preferable that the upper surface of the material is on the same plane and the upper surface of the metal protrusion is exposed.
本発明では、金属突起の上面と封止材の上面が同一平面上にある。このため、電子部品の厚さを薄くすることができる。また、金属突起の上面が露出しているため、電子素子から発生するジュール熱を、確実に、金属突起の上面を通じて外部に効率よく放熱することができる。 In the present invention, the upper surface of the metal protrusion and the upper surface of the sealing material are on the same plane. For this reason, the thickness of the electronic component can be reduced. In addition, since the upper surface of the metal protrusion is exposed, Joule heat generated from the electronic element can be reliably and efficiently radiated to the outside through the upper surface of the metal protrusion.
または、本発明では、前記封止材が前記基板の裏面上にも設けられ、前記金属突起が前記封止材を貫通し、前記封止材の上面よりも上方に露出していてもよい。 Or in this invention, the said sealing material may be provided also on the back surface of the said board | substrate, and the said metal protrusion may penetrate the said sealing material and it is exposed above the upper surface of the said sealing material.
このため、電子素子から発生するジュール熱を、確実に、金属突起の上面を通じて外部に効率よく放熱することができる。 For this reason, the Joule heat generated from the electronic element can be efficiently radiated to the outside through the upper surface of the metal protrusion with certainty.
本発明では、前記金属突起を覆う金属膜が設けられていることが好ましい。
本発明では、金属突起の上に金属膜が設けられており、金属膜が金属突起を覆っている。このため、電子素子から発生するジュール熱が、金属突起を介して所定の面積を有する金属膜に伝えられ、金属膜の全面から外部に放熱される。その結果、電子素子から発生するジュール熱の放熱効率をより高めることができる。
In this invention, it is preferable that the metal film which covers the said metal protrusion is provided.
In the present invention, a metal film is provided on the metal protrusion, and the metal film covers the metal protrusion. For this reason, Joule heat generated from the electronic element is transmitted to the metal film having a predetermined area via the metal protrusion, and is radiated from the entire surface of the metal film to the outside. As a result, the heat dissipation efficiency of Joule heat generated from the electronic element can be further increased.
上記において、前記金属膜が、前記筐体の底面に設けられた接続部と電気的に接続されていることが好ましい。 In the above, it is preferable that the metal film is electrically connected to a connection portion provided on a bottom surface of the housing.
このようにすると、電子素子から発生するジュール熱が、金属膜に伝えられ、接続部を通って、筐体が載置される、所定の面積を有する配線基板に伝えられる。すなわち、電子素子から発生するジュール熱が、金属突起や金属膜によってだけでなく、配線基板によっても放熱される。その結果、電子素子から発生するジュール熱の放熱効率をより高めることができる。 If it does in this way, the Joule heat which generate | occur | produces from an electronic element will be transmitted to a metal film, and will be transmitted to the wiring board which has a predetermined area through which a housing | casing is mounted through a connection part. That is, Joule heat generated from the electronic element is dissipated not only by the metal protrusions and the metal film but also by the wiring board. As a result, the heat dissipation efficiency of Joule heat generated from the electronic element can be further increased.
本発明の電子部品の製造方法は、以下の工程を有することを特徴とする。
（ａ）電子素子の基板の裏面上に金属突起を設ける工程、
（ｂ）前記基板と筐体との間、前記基板の裏面上および前記金属突起上に封止材を設け、前記封止材によって前記基板と前記筐体との間を封止する工程、
（ｃ）前記金属突起を前記封止材から露出させる工程、
（ｄ）前記金属突起と前記封止材を金属膜によって覆う工程。
The method for manufacturing an electronic component according to the present invention includes the following steps.
(A) providing a metal protrusion on the back surface of the substrate of the electronic element;
(B) providing a sealing material between the substrate and the housing, on the back surface of the substrate and on the metal protrusion, and sealing between the substrate and the housing with the sealing material;
(C) exposing the metal protrusion from the sealing material;
(D) A step of covering the metal protrusion and the sealing material with a metal film.
また、本発明では、前記（ａ）工程において、前記金属突起はバンプめっきから形成されることが好ましい。または、前記（ａ）工程において、前記基板の裏面には所定の間隔で貫通孔がパターン形成されたレジスト層が設けられ、前記金属突起は、前記間隔内に前記貫通孔の側面に沿って形成されることが好ましい。 In the present invention, in the step (a), the metal protrusion is preferably formed by bump plating. Alternatively, in the step (a), a resist layer having through holes patterned at predetermined intervals is provided on the back surface of the substrate, and the metal protrusions are formed along the side surfaces of the through holes within the intervals. It is preferred that
本発明では、予め、電子素子の基板の裏面上に金属突起を設ける。このため、研磨などの容易な方法によって、基板の裏面などを傷つけることなく、金属突起を封止材から露出させることができる。その結果、金属突起を封止材から露出させる工程において、電子素子が損傷してしまうことを防止することができる。 In the present invention, a metal protrusion is provided in advance on the back surface of the substrate of the electronic element. For this reason, the metal protrusion can be exposed from the sealing material by an easy method such as polishing without damaging the back surface of the substrate. As a result, it is possible to prevent the electronic element from being damaged in the step of exposing the metal protrusion from the sealing material.
本発明では、前記（ｃ）工程において、前記封止材および前記封止材によって覆われた前記金属突起を研磨することによって、前記金属突起を露出させることが好ましい。 In the present invention, in the step (c), the metal protrusion is preferably exposed by polishing the sealing material and the metal protrusion covered with the sealing material.
上記においては、前記研磨によって、前記金属突起の上面と前記基板の裏面上に設けられる前記封止材の上面とが同一平面上になるようにすることが好ましい。 In the above, it is preferable that the upper surface of the metal protrusion and the upper surface of the sealing material provided on the back surface of the substrate are flush with each other by the polishing.
このようにすると、金属膜を金属突起の上に確実に安定して設けることができる。
または、本発明では、前記（ｃ）工程において、前記金属突起を前記封止材に対して貫通させることが好ましい。
If it does in this way, a metal film can be reliably provided on a metal protrusion.
Or in this invention, it is preferable to penetrate the said metal protrusion with respect to the said sealing material in the said (c) process.
このようにすると、金属突起を露出させるための前記研磨工程が不要となり、製造工程を簡略にすることができる。 If it does in this way, the said grinding | polishing process for exposing a metal protrusion will become unnecessary, and a manufacturing process can be simplified.
本発明では、前記（ｄ）工程において、前記金属膜を前記筐体の底面に設けられた接続部と電気的に接続することが好ましい。 In the present invention, in the step (d), the metal film is preferably electrically connected to a connection portion provided on the bottom surface of the housing.
また本発明では、前記（ｂ）工程において、前記筐体は、基部と側壁部と、前記基部と前記側壁部とによって囲まれた凹形の収納部とを有しており、前記基板を、前記基板の表面が前記収納部の底面と対向するように前記収納部内に収納することが好ましい。 In the present invention, in the step (b), the housing includes a base portion, a side wall portion, and a concave storage portion surrounded by the base portion and the side wall portion, It is preferable that the substrate is stored in the storage unit such that the surface of the substrate faces the bottom surface of the storage unit.
本発明の電子部品では放熱性を高めることができる。また、本発明の製造方法によって、電子素子を損傷させることなく、容易に前記電子部品を製造することができる。 In the electronic component of the present invention, heat dissipation can be improved. Further, the electronic component can be easily manufactured by the manufacturing method of the present invention without damaging the electronic element.
図１は本発明の第１の実施の形態の電子部品を示す断面図である。
本実施の形態の電子部品Ｅ１は、電子素子１０を、セラミック製の筐体１１に設けられた凹形の収納部１２内に封入したものである。
FIG. 1 is a cross-sectional view showing an electronic component according to a first embodiment of the present invention.
The electronic component E1 of the present embodiment is one in which the electronic element 10 is enclosed in a concave storage portion 12 provided in a ceramic casing 11.
電子素子１０は基板１０Ａを有しており、電子素子１０の表面（図示Ｚ２側の面）と基板１０Ａの表面は同一であり、符号１０ａで示す。そして、電子素子１０の裏面（図示Ｚ１側の面）と基板１０Ａの裏面は同一であり、符号１０ｂで示す。 The electronic element 10 includes a substrate 10A, and the surface of the electronic element 10 (the surface on the Z2 side in the drawing) and the surface of the substrate 10A are the same, and are denoted by reference numeral 10a. The back surface of the electronic element 10 (the surface on the Z1 side in the drawing) and the back surface of the substrate 10A are the same, and are denoted by reference numeral 10b.
筐体１１は積層基板から形成されており、基部１１ａと側壁部１１ｂ１，１１ｂ２を有している。側壁部１１ｂ１の図示Ｘ２側の端面および側壁部１１ｂ２の図示Ｘ１側の端面には半円筒形状にくりぬかれた貫通孔（スルーホール）が形成されており、スルーホールの表面にスパッタなどで金属めっき３０が施されて導通部が形成されている。 The housing 11 is formed of a laminated substrate and has a base portion 11a and side wall portions 11b1 and 11b2. A through hole (through hole) hollowed in a semi-cylindrical shape is formed in the end surface on the X2 side of the side wall portion 11b1 and the end surface on the X1 side of the side wall portion 11b2, and metal plating is performed on the surface of the through hole by sputtering or the like. 30 is applied to form a conductive portion.
筐体１１には、基部１１ａ上に側壁部１１ｂ１，１１ｂ２が設けられることにより、凹形の収納部１２が形成されている。電子素子１０は、その基板１０Ａの表面１０ａが収納部１２の底面１２ａと対向するように収納部１２内に収納されており、基板１０Ａの裏面１０ｂが上側（図示Ｚ１側）に位置している。 The housing 11 is provided with side wall portions 11b1 and 11b2 on the base portion 11a, thereby forming a concave storage portion 12. The electronic element 10 is stored in the storage unit 12 such that the front surface 10a of the substrate 10A faces the bottom surface 12a of the storage unit 12, and the back surface 10b of the substrate 10A is positioned on the upper side (Z1 side in the drawing). .
基板１０Ａには端子１０ｃ，１０ｃが形成されており、この端子１０ｃ，１０ｃが、収納部１２内に形成された接続ランド１３，１３に電気的に接続されている。 Terminals 10c and 10c are formed on the substrate 10A, and the terminals 10c and 10c are electrically connected to connection lands 13 and 13 formed in the storage portion 12.
接続ランド１３，１３は、筐体１１の基部１１ａを貫通する導通部１４，１４を介して基部１１ａの下面（図示Ｚ２側の面）１１ａ１に設けられた接続部１５，１５に電気的に接続されている。また、基部１１ａの上面（図示Ｚ１側の面）１１ａ２には導電性材料からなる導通部１６，１６が設けられ、基部１１ａには内部を貫通する導通部１７，１７が設けられ、基部１１ａの下面１１ａ１には接続部１８，１８が設けられている。 The connection lands 13 and 13 are electrically connected to connection portions 15 and 15 provided on a lower surface (surface on the Z2 side in the drawing) 11a1 of the base portion 11a through conduction portions 14 and 14 that penetrate the base portion 11a of the housing 11. Has been. Conductive portions 16 and 16 made of a conductive material are provided on the upper surface (surface on the Z1 side) 11a2 of the base portion 11a, and conductive portions 17 and 17 penetrating the inside are provided on the base portion 11a. Connection portions 18, 18 are provided on the lower surface 11a1.
電子素子１０は、例えば弾性表面波素子を用いて形成されたバンドパスフィルタである。弾性表面波素子は、圧電基板の表面上に、導電性で比重の小さい材料からなる一対のくし歯状電極のくし歯の部分を、互い違いに並べて配置する構成を有している。このような単純な構造を有する弾性表面波素子は、移動体通信端末に実装されるフィルタ、共振器またはデュプレクサを小型化するために非常に適した素子である。 The electronic element 10 is a band-pass filter formed using, for example, a surface acoustic wave element. The surface acoustic wave device has a configuration in which comb portions of a pair of comb-like electrodes made of a material having a low specific gravity are arranged side by side on the surface of a piezoelectric substrate. A surface acoustic wave element having such a simple structure is an element that is very suitable for miniaturizing a filter, a resonator, or a duplexer mounted on a mobile communication terminal.
電子素子１０の基板１０Ａの裏面１０ｂ上には所定の間隔をあけて、たとえばＣｒなどから形成される金属層１９が形成される。そして、各金属層１９上に、バンプめっきなどによって、たとえばＡｕなどから形成される金属突起２０が設けられている。 On the back surface 10b of the substrate 10A of the electronic element 10, a metal layer 19 made of, for example, Cr is formed at a predetermined interval. On each metal layer 19, metal protrusions 20 made of, for example, Au are provided by bump plating or the like.
収納部１２の上側は開放されており、この開放している部分を塞ぐように、隣り合う金属突起２０と金属突起２０との間を含む、電子素子１０の基板１０Ａの裏面１０ｂ上から筐体１１の側壁部１１ｂ１，１１ｂ２の上にかけて樹脂性の封止材２１が設けられている。そして、金属突起２０および封止材２１の上に金属膜２２が設けられており、金属膜２２が金属突起２０および封止材２１を覆っている。 The upper side of the storage portion 12 is open, and a housing is formed on the back surface 10b of the substrate 10A of the electronic element 10 including the space between the adjacent metal protrusions 20 so as to close the open portion. A resinous sealing material 21 is provided on the 11 side wall portions 11b1 and 11b2. A metal film 22 is provided on the metal protrusion 20 and the sealing material 21, and the metal film 22 covers the metal protrusion 20 and the sealing material 21.
封止材２１は例えばエポキシ樹脂やポリイミド樹脂などの熱硬化性樹脂によって形成される。特に、水分透過性が低いエポキシ樹脂を用いることが好ましい。収納部１２が封止材２１により密封されることによって、収納部１２内に収納された電子素子１０が、収納部１２内に密封された状態で封止される。このため、電子素子１０を外気から遮断することができ、外気に含まれる水分等によって、電子素子１０の機能が劣化することを防止することができる。なお、本発明においては、基板１０Ａの表面１０ａ上に、たとえばくし歯状電極などが配置される。このため、少なくとも電子素子１０の基板１０Ａと筐体１１の側壁部１１ｂ１，１１ｂ２との間が封止材２１によって封止されていれば、電子素子１０の機能が外気に含まれる水分等によって劣化することを防止することができる。 The sealing material 21 is formed of a thermosetting resin such as an epoxy resin or a polyimide resin. In particular, it is preferable to use an epoxy resin having low moisture permeability. When the storage unit 12 is sealed with the sealing material 21, the electronic element 10 stored in the storage unit 12 is sealed in a state of being sealed in the storage unit 12. For this reason, the electronic element 10 can be shielded from the outside air, and the function of the electronic element 10 can be prevented from being deteriorated by moisture or the like contained in the outside air. In the present invention, for example, comb-like electrodes are arranged on the surface 10a of the substrate 10A. For this reason, if at least the space between the substrate 10A of the electronic element 10 and the side wall portions 11b1 and 11b2 of the housing 11 is sealed by the sealing material 21, the function of the electronic element 10 is deteriorated by moisture contained in the outside air. Can be prevented.
本発明では、電子素子１０の基板１０Ａの裏面１０ｂ上に金属突起２０が設けられている。このため、電子素子１０からその動作中に発生するジュール熱を外部に効率よく放熱することができる。 In the present invention, the metal protrusion 20 is provided on the back surface 10b of the substrate 10A of the electronic element 10. For this reason, the Joule heat generated during the operation from the electronic element 10 can be efficiently radiated to the outside.
また本実施の形態では、封止材２１が、電子素子１０の基板１０Ａの裏面１０ｂ上のうち、金属突起２０が設けられていない部分にも設けられており、金属突起２０の上面２０ａと封止材２１の上面２１ａが同一平面Ａ上にある。このため、電子部品Ｅ１の厚さ（図示Ｚ１−Ｚ２方向の寸法）を薄くすることができる。また、金属突起２０の上面２０ａが露出しているため、電子素子１０から発生するジュール熱を、確実に、金属突起２０の上面２０ａを通じて外部に効率よく放熱することができる。 In the present embodiment, the sealing material 21 is also provided on a portion of the back surface 10b of the substrate 10A of the electronic element 10 where the metal protrusion 20 is not provided. The upper surface 21a of the stopper 21 is on the same plane A. For this reason, the thickness (dimension in the Z1-Z2 direction in the drawing) of the electronic component E1 can be reduced. Further, since the upper surface 20a of the metal protrusion 20 is exposed, the Joule heat generated from the electronic element 10 can be efficiently radiated to the outside through the upper surface 20a of the metal protrusion 20 with certainty.
また、本発明では、金属突起２０の上に金属膜２２が設けられており、金属膜２２が金属突起２０を覆っている。このため、電子素子１０から発生するジュール熱が、金属突起２０を介して所定の面積を有する金属膜２２に伝えられ、金属膜２２の全面から外部に放熱される。その結果、電子素子１０から発生するジュール熱の放熱効率をより高めることができる。また、金属膜２２はシールドとしても機能する。 In the present invention, the metal film 22 is provided on the metal protrusion 20, and the metal film 22 covers the metal protrusion 20. For this reason, Joule heat generated from the electronic element 10 is transmitted to the metal film 22 having a predetermined area through the metal protrusion 20 and is radiated from the entire surface of the metal film 22 to the outside. As a result, the heat dissipation efficiency of Joule heat generated from the electronic element 10 can be further increased. The metal film 22 also functions as a shield.
本実施の形態では、金属膜２２は前記半円筒形状の導通部と接せられている。そして、前記半円筒形状の導通部は、導通部１６および１７を介して接続部１８と電気的に接続されている。すなわち、金属膜２２が、接続部１８と電気的に接続されている。このため、電子素子１０から発生するジュール熱が、金属膜２２に伝えられ、前記半円筒形状の導通部、導通部１６および１７、接続部１８を通って、筐体１１が載置される、所定の面積を有する配線基板２３に伝えられる。すなわち、電子素子１０から発生するジュール熱が、金属突起２０や金属膜２２によってだけでなく、配線基板２３によっても放熱される。その結果、電子素子１０から発生するジュール熱の放熱効率をより高めることができる。なお、本発明では、筐体１１の側壁部１１ｂ１，１１ｂ２の端面に半円筒形状の導通部を形成せずに、側壁部１１ｂ１，１１ｂ２の内部に、導通部１６と電気的に接続されるように、導電性材料からなる貫通導通部を設け、この貫通導通部に金属膜２２を接せさせてもよい。 In the present embodiment, the metal film 22 is in contact with the semi-cylindrical conducting portion. The semi-cylindrical conducting portion is electrically connected to the connecting portion 18 via the conducting portions 16 and 17. That is, the metal film 22 is electrically connected to the connection portion 18. For this reason, Joule heat generated from the electronic element 10 is transmitted to the metal film 22, and the casing 11 is placed through the semi-cylindrical conducting portions, the conducting portions 16 and 17, and the connecting portion 18. The information is transmitted to the wiring board 23 having a predetermined area. That is, Joule heat generated from the electronic element 10 is radiated not only by the metal protrusions 20 and the metal film 22 but also by the wiring board 23. As a result, the heat dissipation efficiency of Joule heat generated from the electronic element 10 can be further increased. In the present invention, the conductive portion 16 is electrically connected to the inside of the side wall portions 11b1 and 11b2 without forming the semicylindrical conductive portion on the end surface of the side wall portions 11b1 and 11b2 of the housing 11. Alternatively, a through conduction portion made of a conductive material may be provided, and the metal film 22 may be in contact with the through conduction portion.
図２は本発明の第１の実施の形態の電子部品の変形例を示す断面図である。
図２において、図１に示す電子部品Ｅ１と同様の部材等には同一の符号を付し、説明を省略する。
FIG. 2 is a cross-sectional view showing a modification of the electronic component according to the first embodiment of the present invention.
In FIG. 2, the same members as those of the electronic component E1 shown in FIG.
本変形例の電子部品Ｅ２では、金属突起２０が、封止材２１を貫通しており、封止材２１の上面２１ａよりも上方に露出している。そして、露出した金属突起２０が金属膜２２によって覆われている。これらの点が電子部品Ｅ１の構造と異なっており、他の構造は電子部品Ｅ１と同様である。 In the electronic component E <b> 2 of this modification, the metal protrusion 20 penetrates the sealing material 21 and is exposed above the upper surface 21 a of the sealing material 21. The exposed metal protrusion 20 is covered with a metal film 22. These points are different from the structure of the electronic component E1, and other structures are the same as those of the electronic component E1.
したがって、本変形例の電子部品Ｅ２においても、電子部品Ｅ１と同様に、電子素子１０からその動作中に発生するジュール熱を外部に効率よく放熱することができる。 Therefore, also in the electronic component E2 of this modification, Joule heat generated during the operation from the electronic element 10 can be efficiently radiated to the outside in the same manner as the electronic component E1.
図３は本発明の第２の実施の形態の電子部品を示す断面図である。
図３において、図１に示す電子部品Ｅ１と同様の部材等には同一の符号を付し、説明を省略する。
FIG. 3 is a sectional view showing an electronic component according to the second embodiment of the present invention.
In FIG. 3, members similar to those of the electronic component E <b> 1 shown in FIG.
本実施の形態の電子部品Ｅ３においては、電子部品Ｅ１と異なり、電子素子１０が筐体１１Ａに設置され、電子素子１０の基板１０Ａと筐体１１Ａとの間が封止材２１によって封止されており、さらに電子素子１０の周囲が封止材２１によって覆われている。そして、金属膜２２が、筐体１１Ａに設けられた導通部１６と接せられ、導通部１６および１７を介して接続部１８と電気的に接続されている。すなわち、金属膜２２が接続部１８と電気的に接続されている。 In the electronic component E3 of the present embodiment, unlike the electronic component E1, the electronic element 10 is installed in the housing 11A, and the space between the substrate 10A and the housing 11A of the electronic element 10 is sealed with the sealing material 21. Further, the periphery of the electronic element 10 is covered with a sealing material 21. The metal film 22 is in contact with the conduction portion 16 provided in the housing 11 </ b> A and is electrically connected to the connection portion 18 via the conduction portions 16 and 17. That is, the metal film 22 is electrically connected to the connection portion 18.
本実施の形態の電子部品Ｅ３では、電子部品Ｅ１と異なり、筐体１１Ａには側壁部１１ｂ１，１１ｂ２が設けられていない。このため、電子部品Ｅ３は、電子部品Ｅ１と比べて小型にすることができる。 In the electronic component E3 of the present embodiment, unlike the electronic component E1, the housing 11A is not provided with the side wall portions 11b1 and 11b2. For this reason, the electronic component E3 can be made smaller than the electronic component E1.
また、電子部品Ｅ１と異なり、電子素子１０の基板１０Ａと筐体１１Ａとの間が封止材２１によって封止されており、さらに電子素子１０の周囲が封止材２１によって覆われている。このため、電子素子１０を外気から遮断することができ、外気に含まれる水分等によって、電子素子１０の機能が劣化することを防止することができる。なお、本発明においては、基板１０Ａの表面１０ａ上に、たとえばくし歯状電極などが配置される。このため、少なくとも電子素子１０の基板１０Ａと筐体１１Ａとの間が封止材２１によって封止されていれば、電子素子１０の機能が外気に含まれる水分等によって劣化することを防止することができる。 Further, unlike the electronic component E <b> 1, the space between the substrate 10 </ b> A of the electronic element 10 and the housing 11 </ b> A is sealed with a sealing material 21, and the periphery of the electronic element 10 is covered with the sealing material 21. For this reason, the electronic element 10 can be shielded from the outside air, and the function of the electronic element 10 can be prevented from being deteriorated by moisture or the like contained in the outside air. In the present invention, for example, comb-like electrodes are arranged on the surface 10a of the substrate 10A. For this reason, if at least the space between the substrate 10A and the housing 11A of the electronic element 10 is sealed with the sealing material 21, the function of the electronic element 10 is prevented from being deteriorated by moisture contained in the outside air. Can do.
これらの点が電子部品Ｅ１の構造と異なっており、他の構造は電子部品Ｅ１と同様である。このため、本実施の形態の電子部品Ｅ３においても、電子部品Ｅ１と同様に、電子素子１０からその動作中に発生するジュール熱を外部に効率よく放熱することができる。 These points are different from the structure of the electronic component E1, and other structures are the same as those of the electronic component E1. For this reason, also in the electronic component E3 of this Embodiment, the Joule heat which generate | occur | produces during the operation | movement from the electronic element 10 can be efficiently thermally radiated outside similarly to the electronic component E1.
また、本実施の形態の電子部品Ｅ３においても、図２に示すような、金属突起２０を封止材２１から貫通させて露出させ、露出した金属突起２０を金属膜２２によって覆う構造としてもよい。 Also in the electronic component E3 of the present embodiment, as shown in FIG. 2, the metal protrusion 20 may be exposed through the sealing material 21, and the exposed metal protrusion 20 may be covered with the metal film 22. .
次に、本発明の電子部品の製造方法を説明する。
まず、図１ないし図３に示すように、筐体１１の基部１１ａまたは筐体１１Ａに、接続ランド１３，導通部１４，接続部１５を設け、接続ランド１３を導通部１４を介して接続部１５に電気的に接続する。また、基部１１ａまたは筐体１１Ａに導通部１６および１７，接続部１８を設け、導通部１６を導通部１７を介して接続部１８に電気的に接続する。そして、図１および図２に示す電子部品Ｅ１，Ｅ２においては、基部１１ａの上に基板を積層して側壁部１１ｂ１，１１ｂ２を形成し、収納部１２を形成する。側壁部１１ｂ１の図示Ｘ２側の端面および側壁部１１ｂ２の図示Ｘ１側の端面に、半円筒形状にくりぬかれた導通部を形成する。
Next, the manufacturing method of the electronic component of this invention is demonstrated.
First, as shown in FIGS. 1 to 3, a connection land 13, a conduction portion 14, and a connection portion 15 are provided on the base 11 a or the case 11 </ b> A of the housing 11. 15 is electrically connected. In addition, the conduction portions 16 and 17 and the connection portion 18 are provided on the base portion 11a or the housing 11A, and the conduction portion 16 is electrically connected to the connection portion 18 via the conduction portion 17. In the electronic components E1 and E2 shown in FIGS. 1 and 2, a substrate is stacked on the base portion 11a to form the side wall portions 11b1 and 11b2, and the storage portion 12 is formed. A conductive portion hollowed out in a semi-cylindrical shape is formed on the end surface on the X2 side of the side wall portion 11b1 and the end surface on the X1 side of the side wall portion 11b2.
次に、本発明の電子部品の製造方法の特徴的部分を説明する。
図４ないし図６は本発明の電子部品の製造工程のうち、特徴的な製造工程を示す断面図である。なお、共通箇所については符号を省略する。
Next, the characteristic part of the manufacturing method of the electronic component of this invention is demonstrated.
4 to 6 are cross-sectional views showing characteristic manufacturing steps among the manufacturing steps of the electronic component of the present invention. In addition, a code | symbol is abbreviate | omitted about a common location.
まず、図４Ａに示す工程において、電子素子１０の基板１０Ａの裏面１０ｂ上に、所定の間隔をあけて、たとえばＣｒなどから形成される金属層１９を形成する。そして、各金属層１９上にバンプめっきによって、たとえばＡｕなどから形成される金属突起２０を設ける。 First, in the step shown in FIG. 4A, a metal layer 19 made of, for example, Cr is formed on the back surface 10b of the substrate 10A of the electronic element 10 at a predetermined interval. Then, metal protrusions 20 made of, for example, Au are provided on each metal layer 19 by bump plating.
あるいは、図５に示すように、まず、基板１０Ａの裏面１０ｂの全面に金属層１９を形成し、金属層１９の上に所定の間隔をあけて貫通孔がパターン形成されたレジスト層２４を設ける。そして、フレームメッキ法により金属突起２０を設け、レジスト層２４を除去し、基板１０Ａの裏面１０ｂ上に金属突起２０を設けてもよい。または、基板１０Ａの裏面１０ｂ上に、溶融付着、スパッタ法、プリント印刷によって、または導電性接着剤を用いて金属突起２０を設けてもよい。なお、図３に示す第２の実施の形態の電子部品Ｅ３における金属突起２０も、同様の方法によって設けられる。 Alternatively, as shown in FIG. 5, first, a metal layer 19 is formed on the entire back surface 10b of the substrate 10A, and a resist layer 24 in which through holes are patterned is provided on the metal layer 19 at a predetermined interval. . Then, the metal protrusions 20 may be provided by frame plating, the resist layer 24 may be removed, and the metal protrusions 20 may be provided on the back surface 10b of the substrate 10A. Alternatively, the metal protrusion 20 may be provided on the back surface 10b of the substrate 10A by melt adhesion, sputtering, print printing, or using a conductive adhesive. In addition, the metal protrusion 20 in the electronic component E3 of the second embodiment shown in FIG. 3 is also provided by a similar method.
次に、図４Ｂに示す工程において、図１および図２に示すように、金属突起２０が設けられた電子素子１０の基板１０Ａの表面１０ａが収納部１２の底面１２ａと対向するように電子素子１０を収納部１２内に収納する。したがって、基板１０Ａの裏面１０ｂが上側に位置する。電子素子１０には端子１０ｃ、１０ｃが形成されており、この端子１０ｃ、１０ｃを、筐体１１の基部１１ａに形成された接続ランド１３，１３に電気的に接続する。その後、図４Ｂに示すように、基板１０Ａと筐体１１の側壁部１１ｂ１，１１ｂ２との間、基板１０Ａの裏面１０ｂ上および金属突起２０の上に封止材２１を設け、封止材２１に熱を加えて、封止材２１を硬化させて基板１０Ａと側壁部１１ｂ１，１１ｂ２との間を封止する。すなわち、収納部１２を封止材２１によって密封する。収納部１２が封止材２１によって密封されることによって、収納部１２内に収納された電子素子１０が収納部１２内に密封された状態で封止される。 Next, in the step shown in FIG. 4B, as shown in FIG. 1 and FIG. 10 is stored in the storage unit 12. Therefore, the back surface 10b of the substrate 10A is positioned on the upper side. Terminals 10 c and 10 c are formed on the electronic element 10, and the terminals 10 c and 10 c are electrically connected to connection lands 13 and 13 formed on the base 11 a of the housing 11. Thereafter, as shown in FIG. 4B, a sealing material 21 is provided between the substrate 10A and the side wall portions 11b1 and 11b2 of the housing 11, on the back surface 10b of the substrate 10A, and on the metal protrusions 20. Heat is applied to cure the sealing material 21 to seal between the substrate 10A and the side wall portions 11b1 and 11b2. That is, the storage portion 12 is sealed with the sealing material 21. When the storage unit 12 is sealed with the sealing material 21, the electronic element 10 stored in the storage unit 12 is sealed in a state of being sealed in the storage unit 12.
なお、図３に示す第２の実施の形態の電子部品Ｅ３においては、図３に示すように、金属突起２０が設けられた電子素子１０を筐体１１Ａに設置する。したがって、第１の実施の形態の電子部品Ｅ１およびＥ２と同様に、電子素子１０の基板１０Ａの裏面１０ｂが上側に位置する。そして、第１の実施の形態の電子部品Ｅ１およびＥ２と同様に、電子素子１０に形成された端子１０ｃ、１０ｃを、筐体１１Ａに形成された接続ランド１３，１３に電気的に接続する。その後、基板１０Ａと筐体１１Ａとの間、基板１０Ａの裏面１０ｂ上および金属突起２０の上に封止材２１を設け、さらに基板１０Ａの図示Ｘ１側およびＸ２側の側方に封止材２１を設けて、封止材２１によって基板１０Ａと筐体１１Ａとの間を封止する。すなわち、電子素子１０を封止材２１によって密封する。 In the electronic component E3 of the second embodiment shown in FIG. 3, as shown in FIG. 3, the electronic element 10 provided with the metal protrusion 20 is installed in the housing 11A. Therefore, similarly to the electronic components E1 and E2 of the first embodiment, the back surface 10b of the substrate 10A of the electronic element 10 is positioned on the upper side. Then, similarly to the electronic components E1 and E2 of the first embodiment, the terminals 10c and 10c formed on the electronic element 10 are electrically connected to the connection lands 13 and 13 formed on the housing 11A. Thereafter, a sealing material 21 is provided between the substrate 10A and the housing 11A, on the back surface 10b of the substrate 10A and on the metal protrusion 20, and further on the X1 side and the X2 side of the substrate 10A. And the space between the substrate 10A and the housing 11A is sealed with the sealing material 21. That is, the electronic element 10 is sealed with the sealing material 21.
次に、図４Ｃに示す工程において、封止材２１および封止材２１によって覆われた金属突起２０を研磨し、金属突起２０を露出させる。なお、研磨によってではなく、封止材２１および封止材２１によって覆われた金属突起２０の上側を削り取ることによって金属突起２０を露出させてもよい。 Next, in the step shown in FIG. 4C, the sealing material 21 and the metal protrusion 20 covered with the sealing material 21 are polished to expose the metal protrusion 20. In addition, you may expose the metal protrusion 20 not by grinding | polishing but by scraping the upper side of the metal protrusion 20 covered with the sealing material 21 and the sealing material 21. FIG.
本発明では、前記研磨によって、金属突起２０の上面２０ａと基板１０Ａの裏面１０ｂ上に設けられる封止材２１の上面２１ａとが同一平面Ａ上になるようにすることが好ましい。このようにすると、金属膜２２を金属突起２０の上に確実に安定して設けることができる。 In the present invention, it is preferable that the upper surface 20a of the metal protrusion 20 and the upper surface 21a of the sealing material 21 provided on the back surface 10b of the substrate 10A are on the same plane A by the polishing. In this way, the metal film 22 can be reliably and stably provided on the metal protrusion 20.
または、図６に示すように、金属突起２０を、封止材２１に対して貫通させて、封止材２１の上面２１ａよりも上方に露出させてもよい。このようにすると、金属突起２０を露出させるための前記研磨工程が不要となり、製造工程を簡略にすることができる。 Alternatively, as shown in FIG. 6, the metal protrusion 20 may be passed through the sealing material 21 and exposed above the upper surface 21 a of the sealing material 21. If it does in this way, the said grinding | polishing process for exposing the metal protrusion 20 will become unnecessary, and a manufacturing process can be simplified.
本発明では、予め、電子素子１０の基板１０Ａの裏面１０ｂ上に金属突起２０を設けている。このため、前記研磨などの容易な方法によって、基板１０Ａの裏面１０ｂなどを傷つけることなく、金属突起２０を封止材２１から露出させることができる。その結果、金属突起２０を封止材２１から露出させる工程において、電子素子１０が損傷してしまうことを防止することができる。 In the present invention, the metal protrusion 20 is provided in advance on the back surface 10b of the substrate 10A of the electronic element 10. For this reason, the metal protrusion 20 can be exposed from the sealing material 21 without damaging the back surface 10b of the substrate 10A or the like by an easy method such as polishing. As a result, it is possible to prevent the electronic element 10 from being damaged in the step of exposing the metal protrusion 20 from the sealing material 21.
なお、図３に示す第２の実施の形態の電子部品Ｅ３においても、図４Ｃまたは図６に示す方法と同様の方法によって、金属突起２０が封止材２１から露出させられる。 Also in the electronic component E3 of the second embodiment shown in FIG. 3, the metal protrusion 20 is exposed from the sealing material 21 by the same method as the method shown in FIG. 4C or FIG.
最後に、図４Ｄに示す工程において、金属突起２０および封止材２１の上に、スパッタ法やメッキ法を用いて金属膜２２を設け、金属膜２２によって金属突起２０および封止材２１を覆う。 Finally, in the step shown in FIG. 4D, a metal film 22 is provided on the metal protrusion 20 and the sealing material 21 by using a sputtering method or a plating method, and the metal protrusion 20 and the sealing material 21 are covered with the metal film 22. .
本発明では、図１および図２に示す第１の実施の形態の電子部品Ｅ１およびＥ２の場合には、金属膜２２を、筐体１１の側壁部１１ｂ１，１１ｂ２に設けられた半円筒形状の導通部と接せさせ、前記半円筒形状の導通部、導通部１６および１７を介して接続部１８と電気的に接続することが好ましい。あるいは、図３に示す第２の実施の形態の電子部品Ｅ３の場合には、金属膜２２を、筐体１１Ａに設けられた導通部１６と接せさせ、導通部１６および１７を介して接続部１８と電気的に接続することが好ましい。 In the present invention, in the case of the electronic components E1 and E2 of the first embodiment shown in FIGS. 1 and 2, the metal film 22 is formed in a semi-cylindrical shape provided on the side wall portions 11b1 and 11b2 of the housing 11. It is preferable that the contact portion is in contact with the connection portion 18 via the semi-cylindrical conduction portion and the conduction portions 16 and 17. Alternatively, in the case of the electronic component E3 of the second embodiment shown in FIG. 3, the metal film 22 is brought into contact with the conduction part 16 provided in the housing 11A and is connected via the conduction parts 16 and 17. It is preferable to be electrically connected to the portion 18.
１０ 電子素子
１０Ａ 基板
１１，１１Ａ 筐体
１１ａ 基部
１１ｂ１，１１ｂ２ 側壁部
１２ 収納部
１８ 接続部
２０ 金属突起
２１ 封止材
２２ 金属膜
２４ レジスト層
Ｅ１，Ｅ２，Ｅ３ 電子部品
DESCRIPTION OF SYMBOLS 10 Electronic element 10A Board | substrate 11, 11A Case 11a Base part 11b1, 11b2 Side wall part 12 Storage part 18 Connection part 20 Metal protrusion 21 Sealing material 22 Metal film 24 Resist layer E1, E2, E3 Electronic component
Claims (16)
（ａ）電子素子の基板の裏面上に金属突起を設ける工程、
（ｂ）前記基板と筐体との間、前記基板の裏面上および前記金属突起上に封止材を設け、前記封止材によって前記基板と前記筐体との間を封止する工程、
（ｃ）前記金属突起を前記封止材から露出させる工程、
（ｄ）前記金属突起と前記封止材を金属膜によって覆う工程。 An electronic component manufacturing method characterized by comprising the following steps:
(A) providing a metal protrusion on the back surface of the substrate of the electronic element;
(B) providing a sealing material between the substrate and the housing, on the back surface of the substrate and on the metal protrusion, and sealing between the substrate and the housing with the sealing material;
(C) exposing the metal protrusion from the sealing material;
(D) A step of covering the metal protrusion and the sealing material with a metal film.
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| JP2004309444A JP2006120981A (en) | 2004-10-25 | 2004-10-25 | Electronic component and its manufacturing method |
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| WO2020195741A1 (en) * | 2019-03-25 | 2020-10-01 | 京セラ株式会社 | Electronic component and method for manufacturing same |
| JPWO2020195740A1 (en) * | 2019-03-25 | 2020-10-01 | ||
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