JP2006120666A - Substrate-treating device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To unify a peripheral etching width for treatment while preventing poor influence to the surface center section of a substrate. <P>SOLUTION: First holding rollers 1A-1C are in contact with the end face of a substrate W and are rotated, thus holding and rotating the substrate W. Then, a medical solution is supplied from a medical solution nozzle 142 to the peripheral section of a rotating substrate surface Wf, thus supplying the medical solution to all regions of the peripheral section of the substrate surface Wf. The medical solution nozzle 142 is located between two holding rollers in the first holding rollers 1A-1C, and is arranged near the upstream-side holding roller positioned at the upstream side in a rotary direction A of the substrate W in the pair of holding rollers. Thus, the medical solution supplied from the medical solution nozzle 142 is removed until it reaches the downstream-side holding roller, thus preventing the medical solution from hitting against the pair of holding rollers and bouncing back. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a substrate processing apparatus for supplying a processing solution such as a chemical solution or a rinsing solution to a substrate such as a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal, or an optical disc substrate to perform a predetermined process on the substrate.

  In a series of processing steps for a substrate such as a semiconductor wafer, there are a plurality of film forming steps for forming a thin film such as a photoresist on the surface of the substrate. A film may also be formed on the periphery. However, in general, it is only the device formation region at the center of the substrate surface that needs to be formed on the substrate, and if the film is formed on the back surface of the substrate or the peripheral portion of the substrate surface, The thin film formed on the back surface of the substrate or the peripheral edge of the substrate surface may come off due to contact with other devices, which may cause a decrease in yield and trouble in the substrate processing apparatus itself.

  Therefore, in order to remove the thin film formed on the back surface of the substrate and the peripheral portion of the substrate surface, for example, an apparatus described in Patent Document 1 has been proposed. In this apparatus, a substrate having a thin film formed on its surface is held by substrate holding means such as chuck pins provided in the vicinity of the outer peripheral end of the substrate, and the substrate holding means is rotated. Further, a chemical solution is supplied to the back surface of the rotating substrate. At this time, when a rotating member having a facing surface facing the surface of the substrate and spaced apart from the surface of the substrate by a predetermined distance is rotated, the chemical solution spreads over the entire back surface of the substrate by the rotation of the substrate and the rotation of the rotating member. In addition to removing unnecessary materials on the back surface of the substrate by etching, the unnecessary material on the periphery of the front surface is removed by etching by going around the peripheral surface of the substrate surface through the end surface of the substrate. In this way, the thin film is etched away only at the periphery of the substrate back surface and substrate surface.

JP 2000-235948 A (page 2-3, FIG. 1)

  By the way, the above-described substrate processing is performed in order to remove a certain range of thin film from the periphery of the non-processed portion formed in the substantially central portion of the substrate surface, but this removal range, that is, etching removal from the end face to the inside. It is desirable to accurately control the width (hereinafter referred to as “periphery etching width”). In particular, when a metal layer such as copper is formed on the substrate surface as a thin film, the above substrate processing aims to remove the metal near the end face (bevel), so the peripheral etching width is made uniform over the entire peripheral surface. It has become very important.

  In the conventional apparatus, the peripheral etching width is controlled by the amount of the chemical solution. That is, the amount of chemical solution wraps around by changing the number of revolutions of the substrate, and the peripheral etching width is adjusted accordingly. However, it is difficult to stabilize the amount of wraparound depending on the number of rotations of the substrate, and it has been practically impossible to control the peripheral etching width with sufficient uniformity. In addition, since the outer peripheral edge of the substrate is held by the chuck pins during processing, the amount of the chemical solution that wraps around between the portion held by the chuck pins and the portion not in the peripheral edge of the substrate surface is Unlikely, it has been made more difficult to perform processing with a uniform peripheral etching width.

  Therefore, in order to make the peripheral portion etching width uniform, it is conceivable to supply the chemical solution directly toward the peripheral portion of the substrate surface instead of flowing the chemical solution from the back surface of the substrate to the peripheral portion of the substrate surface. However, in this case, the chemical solution supplied to the peripheral portion of the substrate surface is directed outward in the radial direction of the substrate, and a part of the chemical hits the chuck pin and may bounce off and corrode the central portion (non-processed portion) of the substrate surface. . In addition, since the chuck pins are rotated around the center of rotation of the substrate while holding the outer peripheral edge of the substrate, the chuck pins disturb the airflow around the substrate end surface. As a result, a mist-like chemical liquid scattered during processing may be caught in a space formed between the substrate and the rotating member, and may enter and adhere to the central portion of the substrate surface. Furthermore, in order to process the holding portion where the substrate is held by the chuck pins, the substrate chuck may be opened and closed (substrate holding and substrate holding released) during the processing. It is easy to bounce the chemical solution toward

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate processing apparatus that can perform processing with a uniform peripheral etching width while preventing adverse effects on the central portion of the surface of the substrate.

  In order to achieve the above object, a substrate processing apparatus according to the present invention has a plurality of first holding rollers arranged radially about a predetermined rotation center axis, and each first holding roller is applied to an end surface of the substrate. In the circumferential direction of the substrate rotated by the first rotation holding means among the plurality of first holding rollers, the first rotation holding means for rotating around the rotation center axis while holding the substrate by rotating in contact with the substrate A peripheral edge that is disposed between two adjacent holding rollers, and in the vicinity of the upstream side holding roller located upstream in the rotation direction of the substrate in the pair of holding rollers, and supplies the processing liquid to the surface peripheral edge of the substrate And a processing nozzle.

  In the invention thus configured, each first holding roller rotates while being in contact with the end face of the substrate, so that the first rotation holding means rotates around the rotation center axis while holding the substrate. For this reason, the position where each first holding roller and the substrate end surface abut on each other changes as the substrate rotates. That is, as the substrate rotates, the position at which the substrate end surface is held by each first holding roller changes every moment. For this reason, the processing liquid is supplied to the entire peripheral area of the substrate surface by supplying the processing liquid from the peripheral processing nozzle to the peripheral edge of the surface of the rotating substrate. The processing area can be eliminated, and the peripheral portion of the substrate surface can be processed satisfactorily.

In addition, the peripheral processing nozzle has the following two conditions:
(1) Between two holding rollers adjacent to each other in the circumferential direction of the substrate rotated by the first rotation holding means among the plurality of first holding rollers,
(2) Of the holding roller pair, in the vicinity of the upstream holding roller located upstream in the rotation direction of the substrate,
Is arranged at a position where is satisfied. For this reason, the following effects are obtained. Here, the function and effect will be described by paying attention to a minute region at the peripheral edge of the substrate surface. When the above two conditions are satisfied, when this minute region passes the upstream holding roller, immediately after that, the processing liquid is supplied from the peripheral processing nozzle to the minute region, and the processing with the processing liquid is started. Then, the substrate further rotates, and eventually, the minute region moves to the holding roller located downstream in the rotation direction of the substrate, that is, the downstream holding roller. While the micro area moves from the upstream holding roller to the downstream holding roller in this way, the processing is performed on the micro area by the supplied processing liquid, and the processing liquid supplied to the micro area is transferred to the substrate. The micro area is already dry when it is shaken off from the substrate by the centrifugal force accompanying the rotation and reaches the downstream holding roller. In this way, each part of the peripheral edge of the substrate surface is supplied with the processing liquid after passing through the upstream holding roller, and the processing liquid is removed from the substrate before reaching the downstream holding roller. Thus, it is possible to reliably prevent the treatment liquid from colliding with the holding roller pair and rebounding. As a result, corrosion of the central portion (non-processed portion) of the substrate surface due to the splash of the processing liquid on the central portion of the substrate surface is reliably prevented.

  Here, in the above invention, a plurality of holding roller pairs adjacent to each other are configured, and a peripheral processing nozzle is provided for one of the holding roller pairs, but a part of the other holding roller pair or You may make it arrange | position a peripheral process nozzle further with respect to all. For example, a peripheral processing nozzle may be provided corresponding to each of the plurality of first holding rollers. In this case, each of the plurality of peripheral processing nozzles can be disposed in the vicinity of the downstream side in the rotation direction of the substrate with respect to the first holding roller corresponding to the peripheral processing nozzle. This makes it possible to uniformly treat the peripheral portion of the substrate surface while reliably preventing adverse effects on the central portion of the substrate surface by the same effects as the above-described invention. Further, the processing can be speeded up by increasing the number of processing liquid supply points.

  Further, the plurality of first holding rollers may be arranged at substantially equal angular intervals along the end surface of the substrate with the rotation center axis as the center. By adopting such an arrangement, by setting a long time until the region to which the processing liquid is supplied reaches the next first holding roller, the region to which the processing liquid is supplied is separated from the upstream holding roller. While moving to the downstream holding roller, the supplied processing liquid can be removed. Thereby, the collision of the processing liquid with the downstream holding roller can be prevented, and the splashing of the processing liquid can be suppressed.

  Further, a proximity member having an opposing surface that is close to the back surface of the substrate and a back surface processing nozzle that supplies a processing liquid to a substantially central portion of the back surface of the substrate are further provided, and the peripheral surface of the substrate that rotates from the peripheral processing nozzle The processing liquid is supplied to the substrate to process the peripheral edge of the front surface of the substrate, and the processing liquid is supplied to the substantially central portion of the back surface of the rotating substrate from the back surface processing nozzle, and is sandwiched between the back surface and the opposing surface. You may make it process a substrate back surface by making space into a liquid-tight state. In such a configuration, a so-called one-step process is executed in which a bevel process for processing the peripheral portion of the front surface of the substrate and a back surface process for processing the back surface of the substrate are executed simultaneously. Here, as described above, the peripheral portion of the substrate surface is uniformly processed while adversely affecting the central portion of the substrate surface, and the entire back surface of the substrate is processed as follows. That is, in the holding roller that rotates the substrate while being in contact with the end surface of the substrate, the processing liquid supplied to the substantially central portion of the back surface of the substrate with the centrifugal force accompanying the rotation of the substrate is spread to the entire back surface along the back surface of the substrate. It is difficult to increase the number of revolutions. Therefore, by supplying the processing liquid to the substantially central portion of the back surface of the rotating substrate from the back surface processing nozzle, the space sandwiched between the back surface of the substrate and the facing surface facing the back surface of the substrate is made liquid-tight. The processing liquid is stored in the space to process the entire back surface of the substrate. In this way, by processing the back surface of the substrate, the back surface of the substrate and the peripheral portion of the front surface of the substrate can be processed at the same time, so that the processing time per substrate can be shortened and the throughput can be improved. .

  Furthermore, a gas nozzle may be provided that supplies gas to a non-processing region that is radially inward of the substrate from the peripheral processing region that is processed by the processing liquid supplied from the peripheral processing nozzle to the peripheral portion of the surface of the substrate. According to this configuration, since the gas is supplied to the non-process region radially inward from the peripheral processing region on the substrate surface, entry into the central portion (non-process portion) of the substrate surface is prevented. Thereby, corrosion of the center part of the substrate surface can be prevented and the uniformity of the peripheral etching width can be further improved.

  In addition, it has a plurality of second holding rollers arranged at positions different from the plurality of first holding rollers and radially about the rotation center axis, and rotates while bringing each second holding roller into contact with the end surface of the substrate. A second rotation holding means for rotating the substrate around the rotation center axis while holding the substrate, and a first roller moving means for moving each of the plurality of first holding rollers away from and in contact with the end surface of the substrate. The second roller moving means for moving each of the plurality of second holding rollers away from and in contact with the end surface of the substrate, and the first and second roller moving means are controlled to hold the substrate processed with the processing liquid. It is desirable to further comprise a control means for switching from holding the substrate by the first rotation holding means to holding the substrate by the second rotation holding means.

  According to such a configuration, the second holding roller holds only the substrate processed with the processing liquid. For this reason, even if the workpiece is attached to the first holding roller by the substrate processing, the first holding roller can be switched from holding the substrate by the first holding roller to holding the substrate by the second holding roller after the substrate processing. It is possible to prevent the substrate after processing from being contaminated by the processing object adhered to the substrate. For example, when a metal thin film such as copper formed on the peripheral portion of the substrate surface as an object to be processed is etched, the first and second roller moving means are controlled as follows, so that the post-etching process is performed. It is possible to prevent the thin film component (metal component) from reattaching to the substrate. That is, while the substrate is held by the first holding roller, a chemical solution is supplied as a processing liquid to the peripheral portion of the substrate surface, and the thin film formed on the peripheral portion of the surface is removed. Then, after the thin film is removed from the substrate, the substrate is held by the first and second holding rollers. Thereafter, the substrate holding by the first holding roller is canceled to switch to the substrate holding only by the second holding roller. Further, when processing the next unprocessed substrate (substrate having a copper thin film formed on the surface peripheral edge portion), the etching process is performed while the substrate is held by the first holding roller in the same manner as described above. By executing the substrate processing in this way, the second holding roller handles only the substrate from which the thin film has been removed, so that the thin film component as the object to be processed is reattached to the substrate after the substrate processing (after the thin film removal). Is prevented.

  According to the present invention, the processing liquid from the peripheral processing nozzle is directly supplied to all the regions on the peripheral surface of the substrate surface by rotating the plurality of holding rollers in contact with the end surface of the substrate. For this reason, it is possible to eliminate the unprocessed region at the peripheral portion of the substrate surface and make the peripheral etching width uniform. Further, since the peripheral edge processing nozzle is disposed between two holding rollers adjacent to each other and in the vicinity of the upstream side holding roller located upstream in the rotation direction of the substrate, the peripheral edge processing nozzle The processing liquid supplied from the nozzle is removed from the substrate before reaching the downstream holding roller. For this reason, it can prevent that a process liquid collides with a holding roller pair and bounces back.

  1 and 2 are schematic configuration diagrams showing an embodiment of a substrate processing apparatus according to the present invention. FIG. 3 is a plan view of the substrate processing apparatus of FIG. FIG. 4 is a block diagram showing the main electrical configuration of the substrate processing apparatus of FIG. This substrate processing apparatus can simultaneously perform bevel etching for removing a thin film such as a metal layer or a photoresist layer from the peripheral portion of the substrate surface and back surface cleaning for cleaning the back surface of the substrate (so-called one-step processing is performed). This device is configured as follows.

  In this substrate processing apparatus, the substrate W is held by the three first holding rollers 1A, 1B, and 1C in a posture in which the surface Wf is directed upward and in a substantially horizontal posture. That is, as shown in FIG. 3, the first holding rollers 1 </ b> A to 1 </ b> C are arranged at equal angular (120 °) intervals along the end surface of the substrate W around the rotation center axis J of the substrate W in order to hold the substrate W. Has been. For this reason, the substrate W is held in a state where the end surfaces thereof are in contact with the side surfaces of the first holding rollers 1A to 1C. As a result, the substrate W formed by forming a thin film such as a metal layer or a photoresist layer on the substrate surface Wf is positioned at the substrate processing position P1 in a posture with the substrate surface Wf facing upward and in a substantially horizontal posture.

  The first holding rollers 1 </ b> A to 1 </ b> C are rotatably provided to rotate the substrate W around the rotation center axis J (vertical axis) while holding the substrate W. That is, the first holding rollers 1A to 1C are fixed to roller shafts 11A, 11B (not shown) and 11C, which are supported so as to be rotatable around the vertical axis, respectively. The roller shaft 11A among these roller shafts 11A to 11C is connected to the first rotation drive mechanism 3 including a motor, and the substrate W is rotated by the driving force of the first holding roller 1A. Yes. Accordingly, when the first holding roller 1A is driven by the first rotation driving mechanism 3, the substrate W rotates along the rotation direction A while being held by the three first holding rollers 1A to 1C. At this time, the first holding rollers 1B and 1C are rotated by the rotation of the substrate W. Not only the first holding roller 1A but also the driving force transmission means such as a belt is used to transmit the rotational force of the roller shaft 11A to the roller shafts 11B and 11C, so that all of the three first holding rollers 1A to 1C are transmitted. The substrate W may be rotated by driving. As described above, in this embodiment, the first holding rollers 1 </ b> A to 1 </ b> C and the first rotation driving mechanism 3 constitute the “first rotation holding unit” of the present invention.

  Further, as shown in FIG. 2, the first holding rollers 1A to 1C are brought into contact with the end surface of the substrate W and can be moved up and down while holding the substrate W in a substantially horizontal state. That is, at the other end of the roller shafts 11A to 11C for fixing and supporting the first holding rollers 1A to 1C at one end, the roller shafts 11A to 11C are brought close to the substrate W while allowing the rotation of the respective roller shafts. First contact / separation drive mechanisms 4A, 4B, 4C that drive in the horizontal direction so as to be spaced apart from each other, and first elevating drive mechanisms 5A, 5B, 5C that drive the shafts 11A-11C up and down are provided. Various known mechanisms such as a feed screw mechanism using a ball screw and a mechanism using an actuator such as an air cylinder can be adopted as the first contact / separation drive mechanism and the first lifting / lowering drive mechanism.

Therefore, the first contact / separation drive mechanisms 4A to 4C are operated in accordance with an operation command from the control unit 20 that controls the entire apparatus, so that the first holding rollers 1A to 1C are brought into contact with the end surface of the substrate W and The contact position for holding the substrate W and the separation position for releasing the substrate holding away from the end surface of the substrate W are positioned. In addition, the first elevating drive mechanisms 4A to 4C are operated in accordance with an operation command from the control unit 20, so that the substrate W can be carried into and out of the apparatus by the substrate transfer mechanism by a transfer arm or the like. And a base member 9 to be described later can be positioned at a position (substrate processing position P1) where the base member 9 is disposed in proximity. That is, if the substrate W and the base member 9 are arranged close to each other, the transfer arm cannot be inserted into the gap. Therefore, the substrate arm is positioned at the substrate delivery position P2 by the first elevating drive mechanisms 4A to 4C with the position sufficiently distant from the base member 9 as the substrate delivery position P2, and the transfer arm at the substrate delivery position P2. The substrate W is delivered to and from. More specifically, by raising and lowering the first holding rollers 1A to 1C by the first raising and lowering drive mechanisms 4A to 4C,
-Reception of unprocessed substrate W from the transfer arm at substrate transfer position P2-Positioning of received unprocessed substrate W to substrate processing position P1-Processing substrate W that has undergone predetermined substrate processing to substrate transfer position P2 Positioning ・ The processed substrate W is delivered to the transfer arm.

  Further, as shown in FIG. 3, the three second holding rollers 2A to 2C that hold the substrate W in contact with the end surface of the substrate W at positions different from the first holding rollers 1A to 1C include the rotation center axis J of the substrate W. Are arranged at equiangular intervals (120 ° intervals) along the end surface of the substrate W. Specifically, the second holding rollers 2A to 2C are disposed downstream of the first holding rollers 1A to 1C in the rotation direction A of the substrate W and in the vicinity of the first holding rollers 1A to 1C, respectively. These second holding rollers 2A to 2C have the same configuration as the first holding rollers 1A to 1C. That is, the second rotation driving mechanism 6 is connected to the second holding roller 2A via a roller shaft (not shown), and rotates while holding the substrate W. Further, second contact / separation drive mechanisms 7A, 7B, 7C and second elevating drive mechanisms 8A, 8B, 8C are provided, and the second holding rollers 2A-2C are respectively separated from the end surface of the substrate W. The substrate W can be moved up and down while being held in contact. Thus, in this embodiment, the second holding rollers 2A to 2C and the second rotation driving mechanism 6 constitute the “second rotation holding means” of the present invention.

  As described above, the first holding rollers 1A to 1C and the second holding rollers 2A to 2C can operate independently of each other. That is, when the substrate W is held in contact with the three end face positions by the first holding rollers 1A to 1C, the holding of the wafer W by the second holding rollers 2A to 2C is released. it can. In addition, in a state where the holding of the substrate W by the first holding rollers 1A to 1C is released, the substrate W can be held in contact with the three end surface positions by the second holding rollers 2A to 2C. Furthermore, the substrate W can be held by all of the first holding rollers 1A to 1C and the second holding rollers 2A to 2C. In this case, the substrate W can be held at six end face positions. . As described above, in this embodiment, the first contact / separation drive mechanisms 4A to 4C that drive each of the first holding rollers 1A to 1C to separate and come into contact with the end surface of the substrate W are "first roller moving means". As described above, the second contact / separation drive mechanisms 7A to 7C that drive each of the second holding rollers 2A to 2C to separate and come into contact with the end surface of the substrate W function as "second roller moving means".

  In the outer peripheral direction of the substrate W, processing heads 14A, 14B, and 14C are movably provided along guides 13A, 13B, and 13C extending in the horizontal direction. As shown in FIG. 3, the guides 13 </ b> A to 13 </ b> C extend in directions away from each other at equiangular intervals around the rotation center axis J of the substrate W, that is, in directions away from each other by 120 °. Further, actuators 15A, 15B, and 15C are connected to the processing heads 14A to 14C, respectively, and the actuators 15A to 15C are operated in response to an operation command from the control unit 20 that controls the entire apparatus. 14C is opposed to the peripheral portion of the substrate surface Wf (the position of the solid line in FIGS. 1 and 3; hereinafter referred to as “opposing position”), or conversely, is retracted laterally from the peripheral portion of the substrate surface Wf (FIGS. 1 and 3). The broken line position (hereinafter referred to as “retracted position”). In this embodiment, the actuators 15A to 15C are configured so that the amount of movement of the processing heads 14A to 14C in the horizontal direction can be set continuously.

  Here, when these processing heads 14A to 14C are at the opposing positions, the planar shape formed by connecting the processing heads has a donut-shaped annular shape, and the peripheral edge of the substrate surface Wf is extended over the entire circumference. It is possible to cover. This cuts off the entire periphery of the peripheral portion of the substrate surface Wf from the external atmosphere together with the discharge of nitrogen gas from a gas nozzle 141 described later.

  The three processing heads 14 </ b> A to 14 </ b> C all have the same configuration, receive a chemical solution suitable for the etching process from the chemical solution supply unit 16, execute an etching process as described later, or from the rinse liquid supply unit 17. A rinsing process is performed as described later upon receiving a rinse liquid such as pure water or DIW. A gas supply unit 18 is connected to the gas nozzles of the processing heads 14A to 14C and supplies nitrogen gas to each nozzle. More specifically, the processing heads 14A to 14C are configured as follows. Since the three processing heads 14A to 14C have the same configuration, only the configuration of the processing head 14A will be described, and the configuration description of the processing heads 14B and 14C will be omitted.

  5 is an enlarged view of the substrate processing apparatus of FIG. 1 (a cross-sectional view taken along the line VV of FIG. 3). The processing head 14A has an opposing surface that opposes the peripheral edge of the substrate surface Wf. When the opposing surface of the processing head 14A comes close to the peripheral edge of the substrate W by the operation of the actuator 15A, the end surface of the substrate W becomes the processing head 14A. The peripheral edge of the substrate surface Wf faces the processing head 14A. This processing head 14A corresponds to a gas nozzle 141 having a plurality of discharge ports on the opposing surface, and two processing liquid nozzles 142 and 143 for discharging a processing liquid (chemical liquid or rinsing liquid) (the “peripheral processing nozzle” of the present invention). ) And are provided.

  The gas nozzle 141 is connected to the gas supply unit 18 and discharges nitrogen gas from the substrate surface Wf side toward the peripheral edge. As a result, the Bernoulli effect is exerted and the substrate surface Wf is floated while adsorbing to the opposing surface of the processing head 14A in a close state, and the separation distance between the substrate surface Wf and the processing head 14A is kept constant. In this embodiment, nitrogen gas is supplied to the gas nozzle 141. However, air or other inert gas may be discharged. The number of discharge ports of the gas nozzle 141 is not limited to a plurality, and may be a single opening. However, using a plurality of discharge ports is advantageous in terms of obtaining a uniform gas discharge pressure.

  Further, one of the two treatment liquid nozzles 142 and 143 is a chemical liquid nozzle 142 for discharging a chemical liquid, and the other is a rinse liquid nozzle 143 for discharging a rinse liquid (FIG. 3). The chemical liquid nozzle 142 is connected to the chemical liquid supply unit 16, while the rinse liquid nozzle 143 is connected to the rinse liquid supply unit 17. For this reason, when the chemical solution is pumped from the chemical solution supply unit 16 in accordance with the operation command from the control unit 20, the chemical solution is discharged from the chemical solution nozzle 142 toward the peripheral portion of the substrate surface Wf, while the rinse solution supply unit. When the rinse liquid is pumped from 17, the rinse liquid is discharged from the rinse liquid nozzle 143 toward the peripheral edge of the substrate surface Wf.

  These treatment liquid nozzles 142 and 143 are provided on the outer side in the radial direction of the substrate W (on the left hand side in FIG. 5) than the gas nozzle 141. For this reason, since nitrogen gas is supplied to the non-processing region NTR radially inward of the substrate W from the peripheral processing region TR processed by the processing liquid supplied from the processing liquid nozzles 142 and 143, the processing liquid is not processed. Intrusion into the region NTR is prevented.

  The processing liquid nozzles 142 and 143 provided in each processing head are arranged at the following positions with respect to the first holding rollers 1A to 1C and the second holding rollers 2A to 2C, respectively. Since the arrangement relationship of the treatment liquid nozzles 142 and 143 with respect to the first holding rollers 1A to 1C and the arrangement relationship of the treatment liquid nozzles 142 and 143 with respect to the second holding rollers 2A to 2C are the same, the first holding roller is used here. Only the positional relationship of the processing liquid nozzles 142 and 143 with respect to the rollers 1A to 1C will be described, and the description of the positional relationship of the processing liquid nozzles 142 and 143 with respect to the second holding rollers 2A to 2C will be omitted.

  The treatment liquid nozzles 142, 143 are (1) between two holding rollers of the three holding rollers 1A to 1C, and (2) upstream of the holding roller pair in the rotation direction A of the substrate W. It is arranged in the vicinity of the upstream holding roller located. Specifically, the processing liquid nozzles 142 and 143 provided in the processing head 14A are between the two holding rollers 1B and 1C, and are upstream of the holding roller pair 1B-1C in the rotation direction A of the substrate W. It is arrange | positioned in the downstream of the vicinity of the upstream holding roller 1B located in this. Further, the processing liquid nozzles 142 and 143 provided in the processing head 14B are located between the two holding rollers 1C and 1A and upstream of the holding roller pair 1C-1A in the rotation direction A of the substrate W. It is arranged on the downstream side in the vicinity of the upstream holding roller 1C. Further, the processing liquid nozzles 142 and 143 provided in the processing head 14C are located between the two holding rollers 1A and 1B and upstream of the holding roller pair 1A-1B in the rotation direction A of the substrate W. It is arranged on the downstream side in the vicinity of the upstream holding roller 1A.

  Further, a base member 9 (corresponding to the “proximity member” of the present invention) having a facing surface 9 a that faces and opposes the substrate back surface Wb is fixedly disposed on the back surface side of the substrate W. A back surface processing nozzle 21 and a gas supply nozzle 22 are provided in the central portion of the base member 9 in the vertical axis direction, so that the processing liquid and nitrogen gas can be selectively supplied toward the substantially central portion of the substrate back surface Wb. Has been. The back surface processing nozzle 21 is connected to the chemical liquid supply unit 16 and the rinse liquid supply unit 17 and selectively supplies the chemical liquid or the rinse liquid. On the other hand, the gas supply nozzle 22 is connected to the gas supply unit 18 and supplies nitrogen gas to the substrate rear surface Wb side. For this reason, the processing liquid and the nitrogen gas are selectively discharged from the back surface processing nozzle 21 and the gas supply nozzle 22 to fill the space SP sandwiched between the substrate back surface Wb and the facing surface 9a with the processing liquid or the nitrogen gas. Is possible.

  Next, the operation of the substrate processing apparatus configured as described above will be described with reference to FIGS. FIG. 6 is a flowchart showing the operation of the substrate processing apparatus of FIG. In this substrate processing apparatus, when a substrate W having a thin film TF such as a metal layer or a photoresist layer formed on the substrate surface Wf is carried into the apparatus with the substrate surface Wf facing upward, bevel etching is performed on the substrate W. The process (etching process + rinsing process + drying process) and the back surface cleaning process are performed simultaneously. More specifically, a series of processing shown in the flowchart of FIG. 6 is executed.

  First, in step S1, the control unit 20 drives the first raising / lowering driving mechanisms 5A to 5C to raise the first holding rollers 1A to 1C to be positioned at the substrate delivery position P2. At this time, the first holding rollers 1 </ b> A to 1 </ b> C are in a separated position (a position where the substrate holding is released) and can receive the substrate W. Further, the processing heads 14A to 14C are separated from the peripheral edge of the substrate W (the positions indicated by broken lines in FIGS. 1 and 3) to prevent interference with the substrate W. Subsequently, when the unprocessed substrate W is carried into the apparatus with the front surface Wf facing upward by a transport arm or the like and transported to the substrate delivery position P2 (step S2), the control unit 20 performs the first contact. The separation drive mechanisms 4 </ b> A to 4 </ b> C are driven to bring the holding rollers 1 </ b> A to 1 </ b> C into contact with the end surfaces of the substrate W to hold the substrate W. As a result, the unprocessed substrate W held on the transfer arm is transferred to the first holding rollers 1A to 1C (step S3).

  Next, the control unit 20 drives the first raising / lowering driving mechanisms 5A to 5C downward, so that the substrate W is lowered while being held in a substantially horizontal state by the first holding rollers 1A to 1C (step S4). When the substrate W reaches the substrate processing position P1, the control unit 20 stops the lowering of the first holding rollers 1A to 1C and positions the substrate W at the substrate processing position P1 (step S5). Thus, the substrate W is disposed so that the front surface Wf faces upward (in a face-up posture), and the substrate back surface Wb and the facing surface 9a of the base member 9 are opposed to each other.

  Then, the processing heads 14A to 14C are moved to the peripheral edge portion of the substrate W and positioned at a position (solid line position in FIGS. 1 and 3) that can be etched opposite to the peripheral edge portion of the substrate surface Wf (step S6). . That is, when an operator selects a recipe corresponding to a substrate type, a thin film type, or the like via an operation panel (not shown) of the substrate processing apparatus, the processing heads 14A to 14C are respectively guided by guides 13A by a movement amount set in advance by the recipe. It is moved to the inner circumference side of the substrate along .about.13C. At the same time as or before or after step S6, driving of the first rotation drive mechanism 3 is started to rotate the substrate W at the substrate processing position P1 (step S7).

  When the positioning of the processing heads 14A to 14C is thus completed, nitrogen gas is discharged from the gas nozzle 141 toward the substrate W (step S8). Further, a chemical solution suitable for the etching process is sent from the chemical solution supply unit 16 to the chemical solution nozzle 142 and supplied from the end surface of the substrate W to a certain position. As a result, the unnecessary material (thin film TF) is removed by etching from the peripheral portion of the substrate surface Wf with the desired distance between the chemical nozzle 142 and the peripheral portion of the substrate W, that is, the peripheral etching width EH (step S9). This etching process is continuously performed with the rotation of the substrate, and the peripheral portion of the substrate surface Wf is etched and removed accurately with a predetermined peripheral etching width EH and uniformly over the entire periphery of the substrate.

  During the etching process, the position where the first holding rollers 1A to 1C and the end face of the substrate W abut on each other changes as the substrate rotates. For this reason, a chemical | medical solution can be supplied to all the area | regions of the peripheral part of the substrate surface Wf by supplying a chemical | medical solution to the peripheral part of the substrate surface Wf. As a result, an unprocessed region can be eliminated at the peripheral edge of the substrate surface Wf. Further, since the nitrogen gas discharged from the gas nozzle 141 is supplied to the non-processing region NTR on the radial inner side of the substrate W from the peripheral processing region TR of the substrate surface Wf, the chemical solution enters the non-processing region NTR. Is prevented (FIG. 5). This can prevent the central portion (non-processed portion) of the substrate surface Wf from being corroded and further improve the uniformity of the peripheral etching width EH.

  Here, the chemical nozzle 142 provided in each processing head is arranged as follows. That is, as shown in FIG. 3, the chemical nozzle 142 provided in the processing head 14A is between the two holding rollers 1B and 1C, and is upstream of the holding roller pair 1B-1C in the rotation direction A of the substrate W. It is arrange | positioned in the downstream of the vicinity of the upstream holding roller 1B located in the side. The chemical nozzle 142 provided in the processing head 14B is between the two holding rollers 1C and 1A, and the upstream holding roller 1C located upstream in the rotation direction A of the holding roller pair 1C-1A. It is arranged on the downstream side in the vicinity. Further, the chemical nozzle 142 provided in the processing head 14C is between the two holding rollers 1A and 1B, and the upstream holding roller 1A located upstream in the rotation direction A of the holding roller pair 1A-1B. It is arranged on the downstream side in the vicinity. Therefore, the following effects can be obtained. Here, the function and effect of the chemical nozzle 142 provided in the processing head 14A will be described with reference to FIG. 7, focusing on a minute region on the peripheral edge of the substrate surface Wf.

  FIG. 7 is a partial plan view for explaining the bevel etching process. In the drawing, symbols SR (T1) to SR (T4) indicate positions at specific timings T1 to T4 of a specific minute region SR. As described above, the chemical nozzle 142 provided in the processing head 14A has two conditions, that is, (1) between the two holding rollers 1B and 1C adjacent to each other in the circumferential direction of the substrate W, and (2) The holding roller pair 1B-1C is disposed in the vicinity of the upstream holding roller 1B located upstream in the rotation direction A of the substrate W. When these two conditions are satisfied, when the micro area SR at the peripheral edge of the substrate surface Wf passes through the upstream holding roller 1B as the substrate rotates (timing T1), immediately after that, from the chemical nozzle 142 to the micro area SR. The chemical solution is supplied, and the etching process using the chemical solution is started (timing T2). Then, the substrate W further rotates, and the minute region SR moves toward the downstream holding roller 1C located on the downstream side in the rotation direction A. Thus, while the minute region SR moves from the upstream holding roller 1B to the downstream holding roller 1C (timing T3), the etching process is performed on the minute region SR by the supplied chemical solution, and the minute region The chemical solution supplied to the SR is shaken off from the substrate W by the centrifugal force accompanying the substrate rotation. Furthermore, removal of the chemical solution from the substrate W is also promoted by discharging nitrogen gas from the gas nozzle 141. As a result, the minute region SR is already dry when it reaches the downstream holding roller 1C (timing T4).

  As described above, each portion of the peripheral portion of the substrate surface Wf passes through the upstream holding roller 1B, and then the chemical solution is supplied to each portion, and the chemical solution is removed from the substrate W before reaching the downstream holding roller 1C. Therefore, it is possible to reliably prevent the chemical solution from colliding with the holding roller pair 1B-1C and bouncing back. As a result, corrosion of the central portion (non-processed portion) of the substrate surface Wf due to the rebound of the chemical solution at the central portion of the substrate surface Wf is reliably prevented. Here, the chemical liquid supplied from the chemical nozzle 142 provided in the processing head 14A to the peripheral portion of the substrate surface Wf has been described. However, the peripheral portion of the substrate surface Wf from the chemical nozzle 142 provided in the processing heads 14B and 14C. Similarly, the chemical liquid supplied to the liquid is prevented from colliding with the holding roller pairs 1C-1A and 1A-1B and rebounding.

  In addition, the chemical solution is supplied from the chemical solution nozzle 142 to the peripheral portion of the substrate surface Wf, and at the same time, the chemical solution is supplied from the back surface processing nozzle 21 toward the substantially central portion of the substrate back surface Wb. Here, the substrate back surface Wb is processed as follows. That is, in the method in which the substrate W is rotated while the holding roller is in contact with the substrate end surface, the chemical solution supplied to the substantially central portion of the substrate back surface Wb by the centrifugal force accompanying the substrate rotation is transferred along the substrate back surface Wb to the entire back surface Wb. It is difficult to increase the number of rotations of the substrate W as it is spread out.

  Therefore, as shown in FIG. 5, the chemical solution is supplied to the substantially central portion of the substrate back surface Wb rotating from the back surface processing nozzle 21, and is sandwiched between the substrate back surface Wb and the facing surface 9a facing and in close proximity to the substrate back surface Wb. By making the space SP in a liquid-tight state, a chemical solution is accumulated in the space SP to process the entire substrate back surface Wb. In this way, by processing the substrate back surface Wb as well, it is possible to simultaneously process the substrate back surface Wb and the peripheral portion of the substrate surface Wf. Thereby, the processing time per substrate can be shortened and the throughput can be improved.

  When the thin film TF is removed from the peripheral portion of the substrate surface Wf after a predetermined time has elapsed from the start of the etching process, the control unit 20 drives the second contact / separation drive mechanisms 7A to 7C to move the second holding rollers 2A to 2C to the substrate. The substrate W is held in contact with the end face of W. At this time, since the holding of the substrate W by the first holding rollers 1A to 1C is continued, the substrate W is held by all of the six holding rollers 1A to 1C and 2A to 2C.

  Next, the control unit 20 drives the first contact / separation drive mechanisms 4A to 4C to drive the first holding rollers 1A to 1C while continuing the rotation of the substrate W by the six holding rollers 1A to 1C and 2A to 2C. The substrate W is separated from the end surface. Thus, the holding of the substrate W by the first holding rollers 1A to 1C is released. At this time, the second rotation driving mechanism 6 is driven to rotate the second holding roller 2A. Therefore, after that, the rotation of the substrate W is continued in a state where the substrate W is held by the second holding rollers 2A to 2C (step S10). In this way, by switching the holding of the substrate W from the first holding rollers 1A to 1C to the second holding rollers 2A to 2C, even if a thin film component adheres to the first holding rollers 1A to 1C, the first holding roller 1A It can prevent that the board | substrate W after an etching process is contaminated with the unnecessary substance (thin film component) adhering to 1C.

  When the etching process is completed in this way, the rinse liquid is pumped from the rinse liquid supply unit 17 to the rinse liquid nozzle 143, and the rinse liquid is supplied from the end surface of the substrate W to a certain position. As a result, the rinsing process is performed on the peripheral portion of the substrate surface Wf that has been removed by etching (step S11). Note that the rinsing liquid nozzle 143 provided in each processing head is also arranged at a position satisfying the following conditions with respect to the holding rollers 2A to 2C, similarly to the chemical liquid nozzle 142. That is, between the two holding rollers of the three holding rollers 2A to 2C, the holding roller pair is disposed in the vicinity of the upstream holding roller located upstream in the rotation direction A of the substrate W. Yes. For this reason, it can prevent reliably that the rinse liquid collides with a holding roller pair and bounces back.

  In the rinsing process, the rinsing liquid is supplied from the rinsing liquid nozzle 143 to the peripheral portion of the substrate surface Wf, and at the same time, the rinsing liquid is supplied from the back surface processing nozzle 21 toward the center of the substrate back surface Wb. As a result, the space SP sandwiched between the substrate back surface Wb and the facing surface 9a facing and close to the substrate back surface Wb is brought into a liquid-tight state with the rinse liquid, so that the rinse liquid is accumulated in the space SP and the substrate back surface Wb. The whole is rinsed.

  Thus, when the etching process and the rinsing process are completed, the rotation speed of the second rotation drive mechanism 6 is increased, the liquid component adhering to the substrate W is shaken off, and the substrate W is dried (step S12). At this time, while the discharge of the nitrogen gas from the gas nozzle 141 is continued, the drying of the substrate W is promoted by supplying the nitrogen gas from the gas supply nozzle 22 to the space SP sandwiched between the substrate back surface Wb and the facing surface 9a. The After the drying process, the rotation of the substrate W is stopped by stopping the rotation of the second holding rollers 2A to 2C (step S13). When the bevel etching process and the back surface cleaning process are thus completed, the processing heads 14A to 14C are moved sideways from the peripheral edge of the substrate W to be positioned at a position where the substrate W can be delivered (retracted position) (step S14).

  Next, the control unit 20 drives the second lifting / lowering driving mechanisms 8A to 8C upward, so that the processed substrate W is lifted while being held by the second holding rollers 2A to 2C (step S15). When the processed substrate W reaches the substrate delivery position P2, the control unit 20 stops the ascent of the second holding rollers 2A to 2C and positions the substrate W at the substrate delivery position P2 (step S16). Thus, after confirming that the substrate W can be received by the transport arm or the like of the substrate transport mechanism (not shown), the second contact / separation drive mechanisms 7A to 7C are driven and the substrate by the second holding rollers 2A to 2C. Release the hold. As a result, the processed substrate W is transferred to the transfer arm and carried out of the apparatus (step S17).

  Further, when the next unprocessed substrate W (the substrate W having the thin film TF formed on the substrate surface Wf) is subsequently processed, after the substrate W is received by the first holding rollers 1A to 1C in the same manner as described above. Then, an etching process is performed. Thus, by properly using the substrate holding by the first holding rollers 1A to 1C and the substrate holding by the second holding rollers 2A to 2C, the second holding rollers 2A to 2C handle only the substrate W after the thin film removal. Further, it is possible to prevent unnecessary substances (thin film components) from reattaching to the substrate W after the etching process (thin film removal).

  As described above, in this embodiment, at least one of the first holding rollers 1A to 1C and the second holding rollers 2A to 2C rotates while contacting the end surface of the substrate W, so that the processing liquid nozzles 142 and 143 are rotated. Is supplied to all the regions on the peripheral edge of the substrate surface Wf. For this reason, an unprocessed area | region can be eliminated in the peripheral part of the substrate surface Wf, and the peripheral part of the substrate surface Wf can be processed favorably. In addition, since the processing liquid is directly supplied to the peripheral portion of the substrate surface Wf, the peripheral etching width EH is determined regardless of the rotation speed of the substrate W, and the peripheral etching width EH is made uniform. Can do.

  Further, the processing liquid nozzles 142 and 143 are disposed between two holding rollers of the first holding rollers 1A to 1C (or the second holding rollers 2A to 2C), and the substrate W of the pair of holding rollers rotates. It is disposed in the vicinity of the upstream holding roller located upstream in the direction A. For this reason, immediately after passing through the upstream holding roller, the processing liquid is supplied from the processing liquid nozzles 142 and 143 to the peripheral portion of the substrate surface Wf, and the processing of the region to which the processing liquid is supplied is performed and supplied. The processing liquid is removed from the substrate W by the centrifugal force accompanying the rotation of the substrate before reaching the downstream holding roller. For this reason, it can prevent reliably that a process liquid collides with a holding roller pair and bounces. As a result, corrosion of the central portion (non-processed portion) of the substrate surface Wf due to the splash of the processing liquid at the central portion of the substrate surface Wf is reliably prevented.

  Further, in this embodiment, since the processing liquid nozzles 142 and 143 are provided for each of the first holding rollers 1A to 1C (or the second holding rollers 2A to 2C), an adverse effect on the central portion of the substrate surface Wf. The processing speed can be increased by increasing the number of processing liquid supply points. In addition, since the three first holding rollers 1A to 1C (or the second holding rollers 2A to 2C) are arranged at equiangular (120 °) intervals along the end surface of the substrate W with the rotation center axis J as the center, processing is performed. The time until the region to which the liquid is supplied reaches the downstream holding roller located on the downstream side of the substrate W is set to be long. For this reason, while the region to which the processing liquid is supplied moves from the upstream holding roller to the downstream holding roller, the supplied processing liquid can be reliably removed. Thereby, the collision of the processing liquid with the downstream holding roller can be prevented, and the splashing of the processing liquid can be suppressed.

  In this embodiment, the substrate W is not rotated about the rotation center axis together with the substrate holding means such as chuck pins in a state where the outer peripheral end of the substrate W is held. Since the substrate W is rotated by bringing 1C (or the second holding rollers 2A to 2C) into contact with the end surface of the substrate W, the airflow around the end surface of the substrate is not significantly disturbed. For this reason, it is possible to prevent the mist-like chemical liquid scattered during the processing from entering and attaching to the central portion of the substrate surface Wf.

  Further, in this embodiment, the processing liquid is supplied from the processing liquid nozzles 142 and 143 to the peripheral portion of the substrate surface Wf to process the peripheral surface portion of the substrate, and the processing is performed from the back surface processing nozzle 21 to the substantially central portion of the substrate back surface Wb. The substrate back surface Wb can be processed by supplying the liquid and bringing the space SP sandwiched between the substrate back surface Wb and the facing surface 9a into a liquid-tight state. As described above, by simultaneously performing the bevel processing for processing the peripheral portion of the substrate surface Wf and the back surface processing for processing the substrate back surface Wb, the processing time per substrate can be shortened and the throughput can be improved. it can.

  Moreover, in this embodiment, even if a to-be-processed object (thin film component) adheres to 1st holding | maintenance roller 1A-1C, holding | maintenance of the board | substrate W by which etching processing (thin film removal) was carried out was carried out. Since the substrate holding by 1C is switched to the substrate holding by the second holding rollers 2A to 2C, it is possible to prevent the substrate W after the etching process from being contaminated by the workpiece attached to the first holding rollers 1A to 1C. Can do.

  The present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, in the above-described embodiment, all of the three holding roller pairs configured by the first holding rollers 1A to 1C (second holding rollers 2A to 2C), that is, the holding roller pairs 1A-1B, 1B-1C, and 1C-1A are all included. However, the treatment liquid nozzle 142 (143) may be provided for some of the holding roller pairs.

  In the above-described embodiment, the first holding rollers 1A to 1C (second holding rollers 2A to 2C) are arranged at equiangular intervals (120 °) along the end surface of the substrate W around the rotation center axis J. However, the treatment liquid nozzle 142 (143) is between two holding rollers of the first holding rollers 1A to 1C (second holding rollers 2A to 2C), and the rotation direction A of the substrate W of the pair of holding rollers is As long as the first holding roller (second holding roller) is disposed in the vicinity of the upstream holding roller located upstream, the angular interval between the first holding rollers (second holding rollers) is arbitrary.

  In the above embodiment, the substrate W is held by the three first holding rollers 1A to 1C (second holding rollers 2A to 2C), but the number of holding rollers is not limited to this. For example, when the stability of substrate rotation is required according to the substrate type, the substrate rotation speed, etc., the number of holding rollers may be increased to four or more. In this case, the number of the treatment liquid nozzles 142 (143) can also be set arbitrarily according to the uniformity of the peripheral etching width EH, the number of rotations of the substrate, and the like.

  In the above embodiment, the three processing heads 14A to 14C are provided to perform the bevel etching process. However, the number and arrangement of the processing heads are not limited to this, and are arbitrary.

  In the above embodiment, the substrate W is positioned at the substrate processing position P1 and the substrate delivery position P2 by raising and lowering the first holding rollers 1A to 1C (second holding rollers 2A to 2C). The substrate W may be positioned by fixing the holding rollers 1A to 1C (second holding rollers 2A to 2C) and moving the base member 9 up and down. Further, the substrate W may be positioned by moving both the first holding rollers 1A to 1C (second holding rollers 2A to 2C) and the base member 9 up and down.

  The present invention is applied to a substrate processing apparatus for performing a bevel etching process on the entire surface of a substrate including a semiconductor wafer, a glass substrate for photomask, a glass substrate for liquid crystal display, a glass substrate for plasma display, a substrate for optical disk, and the like. Can do.

It is a schematic block diagram which shows one Embodiment of the substrate processing apparatus concerning this invention. It is a schematic block diagram which shows one Embodiment of the substrate processing apparatus concerning this invention. It is a top view of the substrate processing apparatus of FIG. It is a block diagram which shows the main electrical structures of the substrate processing apparatus of FIG. FIG. 5 is an enlarged view of the substrate processing apparatus of FIG. 1 (cross-sectional view taken along line VV in FIG. 3). It is a flowchart which shows operation | movement of the substrate processing apparatus of FIG. It is a fragmentary top view for demonstrating a bevel etching process.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1A-1C ... 1st holding roller 2A-2C ... 2nd holding roller 3 ... 1st rotation drive mechanism (1st rotation holding means)
4A to 4C: First contact / separation drive mechanism (first roller moving means)
6 ... 2nd rotation drive mechanism (2nd rotation holding means)
7A to 7C: Second contact / separation drive mechanism (second roller moving means)
9. Base member (proximity member)
9a ... Opposite surface (opposite to the back of the substrate) 20 ... Control unit (control means)
21 ... Backside treatment nozzle 141 ... Gas nozzle 142 ... Chemical solution nozzle (periphery treatment nozzle)
143 ... rinse liquid nozzle (periphery processing nozzle)
A ... Rotation direction of substrate J ... Rotation center axis NTR ... Non-treatment region SP ... Space (between substrate back surface and opposite surface) TR ... Rim edge treatment region W ... Substrate Wb ... Substrate back surface Wf ... Substrate surface

Claims (6)

A plurality of first holding rollers arranged radially about a predetermined rotation center axis, and rotating while holding the substrate by rotating each first holding roller in contact with the end surface of the substrate. First rotation holding means for rotating around a central axis;
Among the plurality of first holding rollers, between two holding rollers adjacent to each other in the circumferential direction of the substrate rotated by the first rotation holding means, and further upstream in the rotation direction of the substrate among the pair of holding rollers A substrate processing apparatus, comprising: a peripheral processing nozzle that is disposed in the vicinity of the upstream holding roller positioned at the substrate and supplies a processing liquid to a peripheral portion of the surface of the substrate. A plurality of first holding rollers arranged radially about a predetermined rotation center axis, and rotating while holding each substrate by rotating each first holding roller in contact with an end surface of the substrate. First rotation holding means for rotating around a central axis;
A plurality of peripheral processing nozzles provided corresponding to each of the plurality of first holding rollers and supplying a processing liquid to a peripheral surface portion of the surface of the substrate;
Each of the plurality of peripheral processing nozzles is disposed in the vicinity of the downstream side in the rotation direction of the substrate with respect to the first holding roller corresponding to the peripheral processing nozzle.   The substrate processing apparatus according to claim 1, wherein the plurality of first holding rollers are arranged at substantially equal angular intervals along an end surface of the substrate with the rotation center axis as a center. A proximity member having a facing surface that faces and opposes the back surface of the substrate; and a back surface processing nozzle that supplies a processing liquid to a substantially central portion of the back surface of the substrate,
The processing liquid is supplied to the front surface peripheral portion of the substrate rotating from the peripheral processing nozzle to process the front peripheral portion of the substrate, and the processing liquid is disposed at a substantially central portion of the back surface of the substrate rotating from the back processing nozzle. 4. The substrate processing apparatus according to claim 1, wherein the substrate back surface is processed by supplying a liquid and bringing the space between the substrate back surface and the facing surface into a liquid-tight state. 5.   The gas nozzle which further supplies gas to the non-processing area | region inside the radial direction of the said board | substrate from the peripheral process area | region processed with the process liquid supplied to the surface peripheral part of the said board | substrate from the said peripheral process nozzle. The substrate processing apparatus according to any one of the above. It has a plurality of second holding rollers arranged at positions different from the plurality of first holding rollers and radially about the rotation center axis, and rotates while bringing each second holding roller into contact with the end surface of the substrate. Second rotation holding means for rotating about the rotation center axis while holding the substrate,
First roller moving means for moving each of the plurality of first holding rollers away from and in contact with the end surface of the substrate;
Second roller moving means for moving each of the plurality of second holding rollers away from and in contact with the end surface of the substrate;
Control means for controlling the first and second roller moving means to switch the holding of the substrate processed by the processing liquid from holding the substrate by the first rotation holding means to holding the substrate by the second rotation holding means; 6. The substrate processing apparatus according to claim 1, further comprising a substrate processing apparatus.

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